Layer-Dependent Photoinduced Electron Transfer in 0D-2D Lead Sulfide/Cadmium Sulfide-Layered Molybdenum Disulfide Hybrids

Enhanced Photodetection Performance of an In Situ Core/Shell Perovskite-MoS2 Phototransistor

While two-dimensional transition metal dichalcogenides (TMDCs)-based photodetectors offer prospects for high integration density and flexibility, their thinness poses a challenge regarding low light absorption, impacting photodetection sensitivity. Although the integration of TMDCs with metal halide perovskite nanocrystals (PNCs) has been known to be promising for photodetection with a high absorption coefficient of PNCs, the low charge mobility of PNCs delays efficient photocarrier injection into TMDCs. In this study, we integrated MoS2 with in situ formed core/shell PNCs with short ligands that minimize surface defects and enhance photocarrier injection. The PNCs/MoS2 heterostructure efficiently separates electrons and holes by establishing type II band alignment and consequently inducing a photogating effect. The synergistic interplay between photoconductive and photogating effects yields a high responsivity of 2.2 × 106 A/W and a specific detectivity of 9.0 × 1011 Jones. Our findings offer a promising pathway for developing low-cost, high-performance phototransistors leveraging the advantages of two-dimensional (2D) materials.

Precise Tuning of Bilayer Ultrasmall MoS2 Featuring Inhibition of Carrier Recombination and Fast Surface Chemistry for Green H2 Evolution

Achieving water splitting to produce green H2 , using the noble-metal-free MoS2 , has attracted huge interest from researchers. However, tuning the number of MoS2 layers precisely while obtaining small lateral sizes to surge the H2 -evolution rate is a tremendous challenge. Here, a bottom-up strategy is designed for the in situ growth of ultrasmall lateral-sized MoS2 with tunable layers on CdS nanorods (CN) by controlling the decomposition temperature and concentration of substrate seed (NH4 )2 MoS4 . Here, the bilayer MoS2 and CN coupling (2L-MoS2 /CN) exhibits the optimum photocatalytic activity. Compared to thicker MoS2 , the 2L-MoS2 has sufficient reduction capacity to drive photocatalytic H2 evolution and the ultrasmall lateral size provides more active sites. Meanwhile, the indirect bandgap, in contrast to the direct bandgap of the monolayer MoS2 , suppresses the carrier recombination transferred to 2L-MoS2 . Under the synergistic effect of both, 2L-MoS2 /CN has fast surface chemical reactions, resulting in the photocatalytic H2 -evolution rate of up to 41.86 mmol g-1 h-1 . A novel strategy is provided here for tuning the MoS2 layers to achieve efficient H2 evolution.

Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications

Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next-generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next-generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light-emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed.

Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors

The unique electrical and optical properties of transition metal dichalcogenides (TMDs) make them attractive nanomaterials for optoelectronic applications, especially optical sensors. However, the optical characteristics of these materials are dependent on the number of layers. Monolayer TMDs have a direct bandgap that provides higher photoresponsivity compared to multilayer TMDs with an indirect bandgap. Nevertheless, multilayer TMDs are more appropriate for various photodetection applications due to their high carrier density, broad spectral response from UV to near-infrared, and ease of large-scale synthesis. Therefore, this review focuses on the modification of the optical properties of devices based on indirect bandgap TMDs and their emerging applications. Several successful developments in optical devices are examined, including band structure engineering, device structure optimization, and heterostructures. Furthermore, it introduces cutting-edge techniques and future directions for optoelectronic devices based on multilayer TMDs.

Linker-Assisted Assembly of Ligand-Bridged CdS/MoS2 Heterostructures: Tunable Light-Harvesting Properties and Ligand-Dependent Control of Charge-Transfer Dynamics and Photocatalytic Hydrogen Evolution

We used linker-assisted assembly (LAA) to tether CdS quantum dots (QDs) to MoS2 nanosheets via L-cysteine (cys) or mercaptoalkanoic acids (MAAs) of varying lengths, yielding ligand-bridged CdS/MoS2 heterostructures for redox photocatalysis. LAA afforded precise control over the light-harvesting properties of QDs within heterostructures. Photoexcited CdS QDs transferred electrons to molecularly linked MoS2 nanosheets from both band-edge and trap states; the electron-transfer dynamics was tunable with the properties of bridging ligands. Rate constants of electron transfer, estimated from time-correlated single photon counting (TCSPC) measurements, ranged from (9.8 ± 3.8) × 106 s-1 for the extraction of electrons from trap states within heterostructures incorporating the longest MAAs to >5 × 109 s-1 for the extraction of electrons from band-edge or trap states in heterostructures with cys or 3-mercaptopropionic acid (3MPA) linkers. Ultrafast transient absorption measurements revealed that electrons were transferred within 0.5-2 ps or less for CdS-cys-MoS2 and CdS-3MPA-MoS2 heterostructures, corresponding to rate constants ≥5 × 109 s-1. Photoinduced CdS-to-MoS2 electron transfer could be exploited in photocatalytic hydrogen evolution reaction (HER) via the reduction of H+ to H2 in concert with the oxidation of lactic acid. CdS-L-MoS2-functionalized FTO electrodes promoted HER under oxidative conditions wherein H2 was evolved at a Pt counter electrode with Faradaic efficiencies of 90% or higher and under reductive conditions wherein H2 was evolved at the CdS-L-MoS2-heterostructure-functionalized working electrode with Faradaic efficiencies of 25-40%. Dispersed CdS-L-MoS2 heterostructures promoted photocatalytic HER (15.1 μmol h-1) under white-light illumination, whereas free cys-capped CdS QDs produced threefold less H2 and unfunctionalized MoS2 nanosheets produced no measurable H2. Charge separation across the CdS/MoS2 interface is thus pivotal for redox photocatalysis. Our results reveal that LAA affords tunability of the properties of constituent CdS QDs and MoS2 nanosheets and precise, programmable, ligand-dependent control over the assembly, interfacial structure, charge-transfer dynamics, and photocatalytic reactivity of CdS-L-MoS2 heterostructures.

Redox-Enhanced Photoelectrochemical Activity in PHV/CdS Hybrid Film

Semiconductive photocatalytic materials have received increasing attention recently due to their ability to transform solar energy into chemical fuels and photodegrade a wide range of pollutants. Among them, cadmium sulfide (CdS) nanoparticles have been extensively studied as semiconductive photocatalysts in previous studies on hydrogen generation and environmental purification due to their suitable bandgap and sensitive light response. However, the practical applications of CdS are limited by its low charge separation, which is caused by its weak ability to separate photo-generated electron-hole pairs. In order to enhance the photoelectrochemical activity of CdS, a polymer based on viologen (PHV) was utilized to create a series of PHV/CdS hybrid films so that the viologen unit could work as the electron acceptor to increase the charge separation. In this work, various electrochemical, spectroscopic, and microscopic methods were utilized to analyze the hybrid films, and the results indicated that introducing PHV can significantly improve the performance of CdS. The photoelectrochemical activities of the hybrid films were also evaluated at various ratios, and it was discovered that a PHV-to-CdS ratio of 2:1 was the ideal ratio for the hybrid films. In comparison with CdS nanoparticles, the PHV/CdS hybrid film has a relatively lower band gap, and it can inhibit the recombination of electrons and holes, enhancing its photoelectrochemical activities. All of these merits make the PHV/CdS hybrid film as a strong candidate for photocatalysis applications in the future.

Highly selective detection of epinephrine by a "turn-off" fluorescent sensor based on N-doped carbon quantum dots

Epinephrine (EP) is a catecholamine hormone with a variety of physiological activities. Monitoring the concentration of EP in drugs, food, biological samples and cosmetics is of great significance for their quality control. Herein, a novel fluorescence sensing method was designed for the high-specificity detection of EP based on N-doped carbon quantum dots (N-CDs). The EP could interact with the fluorescent senor of N-CDs which emits blue fluorescence to produce concentration- dependent fluorescence quenching through the photo-induced electron transfer (PET). The established sensing method has good linearity in the range of 0.5-10 μM with the LOD of 0.15 μM. More importantly, it is highly selective because similar components with phenolic hydroxyl groups or primary amino groups, even norepinephrine (NEP), could not interfere with the detection. This method can provide a low-cost, rapid and simple new way for the detection of EP, and has a good application prospect in point-of-care assay and in situ test.

2D Material Infrared Photonics and Plasmonics

Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 μm to 1000 μm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.

Zero Dimensional-Two Dimensional Hybrid Photodetectors Using Multilayer MoS2 and Lead Halide Perovskite Quantum Dots with a Tunable Bandgap

We report high-performance 0D-2D hybrid photodetectors integrated with tunable band gap perovskite (CsPbI₃, Cs_XFA_X-1PbI₃, and FAPbI₃) quantum dots and MOCVD-grown bilayer MoS₂. In our hybrid structure, the lead halide PQDs can be utilized as an absorbing layer of light of specific wavelengths and transfer the photogenerated carriers to the MoS₂ transport layer. With tunable wavelength lead halide PQDs, the 0D-2D hybrid photodetector shows a high responsivity up to 10⁷ AW^-1 and high specific detectivity exceeding 10¹³ Jones due to the difference in the built-in potential between PQDs and multilayer MoS₂ layers. This work proposes the possibility of fabricating high-performance photodetectors by hybridizing PQDs of various band gaps with 2D materials.

Nanoscale Control of DNA-Linked MoS2-Quantum Dot Heterostructures

The ability to control the assembly of mixed-dimensional heterostructures with nanoscale control is key for the fabrication of novel nanohybrid systems with new functionalities, particularly for optoelectronics applications. Herein we report a strategy to control the assembly of heterostructures and tune their electronic coupling employing DNA as a linker. We functionalized MoS2 nanosheets (NSs) with biotin-terminated dsDNA employing three different chemical strategies, namely, thiol, maleimide, and aryl diazonium. This allowed us to then tether streptavidinated quantum dots (QDs) to the DNA functionalized MoS2 surface via biotin-avidin recognition. Nanoscale control over the separation between QDs and NSs was achieved by varying the number of base pairs (bp) constituting the DNA linker, between 10, 20, and 30 bp, corresponding to separations of 3.4, 6.8, and 13.6 nm, respectively. Spectroscopic data confirmed the successful functionalization, while atomic force and transmission electron microscopy were employed to image the nanohybrids. In solution steady-state and time-resolved photoluminescence demonstrated the electronic coupling between the two nanostructures, that in turn was observed to progressively scale as a function of DNA linker employed and hence distance between the two nanomoieties in the hybrids.

Molecular Triplet Sensitization of Monolayer Semiconductors in 2D Organic/Inorganic Hybrid Heterostructures

Hybrid heterostructures (HSs) comprising organic and two-dimensional (2D) monolayer semiconductors hold great promise for optoelectronic applications. So far, research efforts on organic/2D HSs have exclusively focused on coupling directly photoexcited singlets to monolayer semiconductors. It remains unexplored whether and how the optically dark triplets in organic semiconductors with intriguing properties (e.g., long lifetime) can be implemented for modulating light-matter interactions of hybrid HSs. Herein, we investigate the triplet sensitization of monolayer semiconductors by time-resolved spectroscopic studies on Pd-octaethylporphyrin (PdOEP)/WSe₂ and PdOEP/WS₂ HSs with type I and type II band alignment, respectively. We show that PdOEP triplets formed in ∼5 ps from intersystem crossing can transfer energy or charge to WSe₂ or WS₂ monolayers, respectively, leading to a significant photoluminescence enhancement (180%) in WSe₂ or long-lived charge separation (>2 ns) in WS₂. The triplet transfer occurs in ∼100 ns, which is more than 3 orders of magnitude slower than singlet and can be attributed to its tightly localized nature. Further study of thickness dependence reveals the dictating role of triplet diffusion for triplet sensitization in organic/2D HSs. This study shows the great promise of much less explored molecular triplets on sensitizing 2D monolayer semiconductors and provides the guidance to achieve long-range light harvesting and energy migration in organic/2D HSs for enhanced optoelectronic applications.

Optical interference effect in the hybrid quantum dots/two-dimensional materials: photoluminescence enhancement and modulation

The optical interference effect originating from the multiple reflections between the two-dimensional (2D) materials and the substrates has been used to dramatically enhance their Raman signal. However, this effect in the hybrid structures of colloidal quantum dots (QD) coupled to 2D materials is always overlooked. Here we theoretically prove that the photoluminescence (PL) intensities of the QD films in the QD-2D hybrid structures can be strongly enhanced and modulated by the optical interference effect between QD and 2D interfaces, breaking the inherent standpoint that PL intensities of the QD films are always prominently quenched in these hybrid structures. The theoretical predictions have been well confirmed by experimental measurements of PL properties of CdSe/ZnS and CdSeTe/ZnS QD on different 2D materials (such as WSe₂, MoS₂, and h-BN). PL intensities of these QD films have been periodically modulated from almost disappearing to strong enhancement (with the enhancement of about 6 times). The optical interference effect uncovered in this work enables a powerful method to manipulate the PL property of the QD films in the different QD-2D hybrid structures. These results can boost the optical performance of the QD-based electronic and optoelectronic devices in the hybrid QD-2D structures.

Long-range transport and ultrafast interfacial charge transfer in perovskite/monolayer semiconductor heterostructure for enhanced light absorption and photocarrier lifetime

Atomically thin two-dimensional transition metal dichalcogenides (TMDs) have shown great potential for optoelectronic applications, including photodetectors, phototransistors, and spintronic devices. However, the applications of TMD-based optoelectronic devices are severely restricted by their weak light absorption and short exciton lifetime due to their atomically thin nature and strong excitonic effect. To simultaneously enhance the light absorption and photocarrier lifetime of monolayer semiconductors, here, we report 3D/2D perovskite/TMD type II heterostructures by coupling solution processed highly smooth and ligand free CsPbBr3 film with MoS2 and WS2 monolayers. By time-resolved spectroscopy, we show interfacial hole transfer from MoS2 (WS2) to the perovskite layer occurs in an ultrafast time scale (100 and 350 fs) and interfacial electron transfer from ultrathin CsPbBr3 to MoS2 (WS2) in ∼3 (9) ps, forming a long-lived charge separation with a lifetime of >20 ns. With increasing CsPbBr3 thickness, the electron transfer rate from CsPbBr3 to TMD is slower, but the efficiency remains to be near-unity due to coupled long-range diffusion and ultrafast interfacial electron transfer. This study indicates that coupling solution processed lead halide perovskites with strong light absorption and long carrier diffusion length to monolayer semiconductors to form a type II heterostructure is a promising strategy to simultaneously enhance the light harvesting capability and photocarrier lifetime of monolayer semiconductors.

Photoelectrochemical sandwich immunoassay of CYFRA21-1 based on In2O3/WO3 type-II heterojunction and CdS quantum dots-polydopamine nanospheres labeling

Using an In₂O₃/WO₃ type-II heterojunction modified fluorine-doped tin oxide (FTO) electrode as the photoanode and CdS quantum dots (QDs)-polydopamine nanospheres (PDA NSs) as the secondary antibody (Ab₂) label, the photoelectrochemistry (PEC) sandwich immunosensing of the lung cancer marker CYFRA21-1 was studied. WO₃ nanoplates were prepared by a hydrothermal method, In₂O₃ nanoporous spheres were prepared by a hydrothermal method followed by calcination, and the In₂O₃/WO₃ type-II heterojunction with high PEC activity was prepared by ultrasonic mixing and cast-coating. PDA NSs with a high surface area can be loaded with abundant Ab₂ molecules and many CdS QDs with an energy level well matched with the heterojunction, so the photocurrent signal can be amplified by the formation of a sandwich immunostructure. Through the simulation experiments of photoelectrode-modified chitosan films of varying thickness, the effective transport distance of photogenerated charges is preliminarily discussed. Under the optimized conditions, the photocurrent was linear with the common logarithm of CYFRA21-1 concentration from 100 fg mL^-1 to 50 ng mL^-1, with a limit of detection of 56 fg mL^-1 (S/N = 3). The immunoassay of CYFRA21-1 in human serum samples gave satisfactory recovery results.

Enhancing Carrier Diffusion Length and Quantum Efficiency through Photoinduced Charge Transfer in Layered Graphene-Semiconducting Quantum Dot Devices

Hybrid devices consisting of graphene or transition metal dichalcogenides (TMDs) and semiconductor quantum dots (QDs) were widely studied for potential photodetector and photovoltaic applications, while for photodetector applications, high internal quantum efficiency (IQE) is required for photovoltaic applications and enhanced carrier diffusion length is also desirable. Here, we reported the electrical measurements on hybrid field-effect optoelectronic devices consisting of compact QD monolayer at controlled separations from single-layer graphene, and the structure is characterized by high IQE and large enhancement of minority carrier diffusion length. While the IQE ranges from 10.2% to 18.2% depending on QD-graphene separation, d_s, the carrier diffusion length, L_D, estimated from scanning photocurrent microscopy (SPCM) measurements, could be enhanced by a factor of 5-8 as compared to that of pristine graphene. IQE and L_D could be tuned by varying back gate voltage and controlling the extent of charge separation from the proximal QD layer due to photoexcitation. The obtained IQE values were remarkably high, considering that only a single QD layer was used, and the parameters could be further enhanced in such devices significantly by stacking multiple layers of QDs. Our results could have significant implications for utilizing these hybrid devices as photodetectors and active photovoltaic materials with high efficiency.

One-dimensional, space-confined, solid-phase growth of the Cu9S5@MoS2 core-shell heterostructure for electrocatalytic hydrogen evolution

Binary transition metal chalcogenide core-shell nanocrystals are considered the most promising nonprecious metal catalysts for large-scale industrial hydrogen production. Herein, we report a one-dimensional, space-confined, solid-phase strategy for the growth of a Cu₉S₅@MoS₂ core-shell heterostructure by combining electrospinning and chemical vapor deposition methods. The Cu₉S₅@MoS₂ core-shell nanocrystals were synthesized in situ on carbon nanofibers (Cu₉S₅@MoS₂/CNFs) by an S vapor graphitization process. Tuning of the MoS₂ shell numbers can be controlled by changing the mass ratio of the Cu and Mo precursors. We experimentally determined the effects of the thickness of the MoS₂ shell on the electrocatalytic activity for the hydrogen evolution reaction (HER) in acidic and alkaline solutions. When the mass ratio is 3:1, the Cu₉S₅@MoS₂/CNFs show the fewest MoS₂ shells with just 1-2 layers each and exhibit the best HER performance with small overpotentials of 116 mV and 114 mV in acidic and alkaline solutions, respectively, at a current density of 10 mA cm^-2. The core shell structures, with their unique Cu-S-Mo nanointerfaces, could enhance the electron transfer and surface area, thus increasing the performance of the HER. This work provides a facile method to design unique core shell assemblies in one-dimensional nanostructures.

Strong suppression of emission quenching in core quantum dots coupled to monolayer MoS2

Non-radiative processes like energy and charge transfer in 0D-2D semiconductor quantum dot (QD)-transition metal dichalcogenides (TMDs) and other two-dimensional layered materials, like graphene and analogs, leading to strong quenching of the photoluminescence (PL) of the usually highly emissive QDs, have been widely studied. Here we report control of the emission efficiency of core QDs placed in close proximity to the monolayers of MoS₂. The QDs are transferred in the form of a high-density compact monolayer with the dot-dot separation, δ as well as the MoS₂-QD separation, d, being controlled through chemical methods. While at larger separations we observe some quenching due to non-radiative processes, at smaller separations we observe enhanced emission from QDs on MoS₂ as compared to the reference despite the presence of significant non-radiative charge transfer. Interestingly, at small separations δ, we see evidence of strong dot-dot interactions and a significant red shift of QD PL which enhances spectral overlap with the B exciton of MoS₂. However, we observe significant reduction of PL quenching of QDs relative to longer δ and d cases, despite increased probability of non-radiative resonant energy transfer to MoS₂, due to the enhanced spectral overlap, as well as charge transfer. Significantly we observe that simultaneously the intensity of the B exciton of MoS₂ increases significantly suggesting the possibility of coherent and resonant radiative energy exchange between the 0D excitons in QDs and the 2D B exciton in MoS₂. Our study reveals interesting nanoscale light-matter interaction effects which can suppress quenching of QDs leading to potential applications of these nanoscale materials in light emitting and photonic devices.

Effect of Band Symmetry on Photocurrent Production in Quasi-One-Dimensional Transition-Metal Trichalcogenides

Photocurrent production in quasi-one-dimensional (1D) transition-metal trichalcogenides, TiS₃(001) and ZrS₃(001), was examined using polarization-dependent scanning photocurrent microscopy. The photocurrent intensity was the strongest when the excitation source was polarized along the 1D chains with dichroic ratios of 4:1 and 1.2:1 for ZrS₃ and TiS₃, respectively. This behavior is explained by symmetry selection rules applicable to both valence and conduction band states. Symmetry selection rules are seen to be applicable to the experimental band structure, as is observed in polarization-dependent nanospot angle-resolved photoemission spectroscopy. Based on these band symmetry assignments, it is expected that the dichroic ratios for both materials will be maximized using excitation energies within 1 eV of their band gaps, providing versatile polarization sensitive photodetection across the visible spectrum and into the near-infrared.

Rational Design of High-Performance Donor-Linker-Acceptor Hybrids Using a Schiff Base for Enabling Photoinduced Electron Transfer

Donor-linker-acceptor (D-L-A)-based photoinduced electron transfer (PET) has been frequently used for the construction of versatile fluorescent chemo/biosensors. However, sophisticated and tedious processes are generally required for the synthesis of these probes, which leads to poor design flexibility. In this work, by exploiting a Schiff base as a linker unit, a covalently bound D-L-A system was established and subsequently utilized for the development of a PET sensor. Cysteamine (Cys) and N-acetyl-l-cysteine (NAC) costabilized gold nanoclusters (Cys/NAC-AuNCs) were synthesized and adopted as an electron acceptor, and pyridoxal phosphate (PLP) was selected as an electron donor. PLP can form a Schiff base (an aldimine) with the primary amino group of Cys/NAC-AuNC through its aldehyde group and thereby suppresses the fluorescence of Cys/NAC-AuNC. The Rehm-Weller formula results and a HOMO-LUMO orbital study revealed that a reductive PET mechanism is responsible for the observed fluorescence quenching. Since the pyridoxal (PL) produced by the acid phosphatase (ACP)-catalyzed cleavage of PLP has a weak interaction with Cys/NAC-AuNC, a novel turn-on fluorescent method for selective detection of ACP was successfully realized. To the best of our knowledge, this is the first example of the development of a covalently bound D-L-A system for fluorescent PET sensing of enzyme activity based on AuNC nanoprobes using a Schiff base.

Quantum Confinement-Tunable Ultrafast Charge Transfer in a PbS Quantum Dots/WSe2 0D-2D Hybrid Structure: Transition from the Weak to Strong Coupling Regime

0D-2D mixed-dimensional hybrid structures, which combine tunable optical properties of 0D quantum dots (QDs) and high transport mobilities of 2D layered materials, have shown great potential in optoelectronic applications. Understanding charge transfer dynamics at the 0D-2D interface is essential but still lacking. Here, using PbS QD/WSe₂ system, by simply controlling PbS QD size, we show a tunable hole transfer (HT) rate by more than 4 orders of magnitude (from ∼1 ns to <100 fs) and, interestingly, transition from the weak to strong coupling regime due to quantum confinement effect. In contrast to reported layer-dependent energy transfer dynamics, we observe a robust HT rate against WSe₂ layer number, which can be ascribed to a subtle change of WSe₂ valence band structure with layer number. Our results are important to not only fundamental understanding of charge transfer behavior at nanoscale low-dimensional interface but also help design next-generation mixed-dimensional optoelectronic devices.