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Zou T, Heo S, Byeon G, Yoo S, Kim M, Reo Y, Kim S, Liu A, Noh YY. Two-Dimensional Tunneling Memtransistor with Thin-Film Heterostructure for Low-Power Logic-in-Memory Complementary Metal-Oxide Semiconductor. ACS NANO 2024; 18:13849-13857. [PMID: 38748609 DOI: 10.1021/acsnano.4c02711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
Abstract
With the demand for high-performance and miniaturized semiconductor devices continuously rising, the development of innovative tunneling transistors via efficient stacking methods using two-dimensional (2D) building blocks has paramount importance in the electronic industry. Hence, 2D semiconductors with atomically thin geometries hold significant promise for advancements in electronics. In this study, we introduced tunneling memtransistors with a thin-film heterostructure composed of 2D semiconducting MoS2 and WSe2. Devices with the dual function of tuning and memory operation were realized by the gate-regulated modulation of the barrier height at the heterojunction and manipulation of intrinsic defects within the exfoliated nanoflakes using solution processes. Further, our investigation revealed extensive edge defects and four distinct defect types, namely monoselenium vacancies, diselenium vacancies, tungsten vacancies, and tungsten adatoms, in the interior of electrochemically exfoliated WSe2 nanoflakes. Additionally, we constructed complementary metal-oxide semiconductor-based logic-in-memory devices with a small static power in the range of picowatts using the developed tunneling memtransistors, demonstrating a promising approach for next-generation low-power nanoelectronics.
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Affiliation(s)
- Taoyu Zou
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Seongmin Heo
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Gwon Byeon
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Soohwan Yoo
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Mingyu Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Youjin Reo
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Soonhyo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Ao Liu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
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2
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Tan T, Guo H, Li Y, Wang Y, Cai W, Bao W, Zhou P, Feng X. Integration of MoS 2 Memtransistor Devices and Analogue Circuits for Sensor Fusion in Autonomous Vehicle Target Localization. ACS NANO 2024; 18:13652-13661. [PMID: 38751043 DOI: 10.1021/acsnano.4c00456] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
Abstract
In contemporary autonomous driving systems relying on sensor fusion, traditional digital processors encounter challenges associated with analogue-to-digital conversion and iterative vector-matrix operations, which are encumbered by limitations in terms of response time and energy consumption. In this study, we present an analogue Kalman filter circuit based on molybdenum disulfide (MoS2) memtransistor, designed to accelerate sensor fusion for precise localization in autonomous vehicle applications. The nonvolatile memory characteristics of the memtransistor allow for the storage of a fixed Kalman gain, which eliminates the data convergence and thus accelerates the processing speeds. Additionally, the modulation of multiple conductance states by the gate terminal enables fast adaptability to diverse autonomous driving scenarios by tuning multiple Kalman filter gains. Our proposed analogue Kalman filter circuit accurately estimates the position coordinates of target vehicles by fusing sensor data from light detection and ranging (LiDAR), millimeter-wave radar (Radar), and camera, and it successfully solves real-word problems in a signal-free crossroad intersection. Notably, our system achieves a 1000-fold improvement in energy efficiency compared to that of digital circuits. This work underscores the viability of a memtransistor for achieving fast, energy-efficient real-time sensing, and continuous signal processing in advanced sensor fusion technology.
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Affiliation(s)
- Tian Tan
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Haoyue Guo
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yida Li
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yafei Wang
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Weiwei Cai
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Wenzhong Bao
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Shaoxing Laboratory, Shaoxing 312300, China
| | - Peng Zhou
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xuewei Feng
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
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3
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Cheng J, Yuan JH, Li PY, Wang J, Wang Y, Zhang YW, Zheng Y, Zhang P. Applying the Wake-Up-like Effect to Enhance the Capabilities of Two-Dimensional Ferroelectric Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38712685 DOI: 10.1021/acsami.4c06177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2024]
Abstract
For traditional ferroelectric field-effect transistors (FeFETs), enhancing the polarization domain of bulk ferroelectric materials is essential to improve device performance. However, there has been limited investigation into the enhancement of polarization field in two-dimensional (2D) ferroelectric material such as CuInP2S6 (CIPS). In this study, similar to bulk ferroelectric materials, CIPS exhibited enhanced polarization field upon application of external cyclic voltage. Moreover, unlike traditional ferroelectric materials, the polarization enhancement of CIPS is not due to redistribution of the defect but rather originates from a mechanism: the long-distance migration of Cu ions. We termed this mechanism the "wake-up-like effect". After incorporating the wake-up-like effect into the graphene/CIPS/WSe2 FeFET device, we successfully increased the hysteresis window and enhanced the current on/off ratio by 4 orders of magnitude. Moreover, the FeFET yielded remarkable achievements, such as multilevel nonvolatile memory with 21 distinct conductance levels, a high on/off ratio exceeding 106, a long retention time exceeding 103 s, and neuromorphic computing with 93% accuracy at recognizing handwritten digits. Introducing the wake-up-like effect to 2D CIPS may pave the way for innovative approaches to achieve advanced multilevel nonvolatile memory and neuromorphic computing capabilities for next-generation micro-nanoelectronic devices.
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Affiliation(s)
- Jie Cheng
- The State Key Laboratory of Precision Manufacturing for Extreme Service Performance, School of Mechanical and Electrical Engineering, Central South University, Changsha 410073, China
| | - Jun-Hui Yuan
- Department of Physics, School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Pei Yue Li
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Jiafu Wang
- Department of Physics, School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Yuan Wang
- Institute of Microelectronics, State Key Laboratory of Analog and Mixed-Signal VLSI, University of Macau, Taipa 999078, Macau, China
| | - You Wei Zhang
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yu Zheng
- The State Key Laboratory of Precision Manufacturing for Extreme Service Performance, School of Mechanical and Electrical Engineering, Central South University, Changsha 410073, China
| | - Pan Zhang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, China
- Institute of Microelectronics, State Key Laboratory of Analog and Mixed-Signal VLSI, University of Macau, Taipa 999078, Macau, China
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4
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Deng Y, Liu S, Ma X, Guo S, Zhai B, Zhang Z, Li M, Yu Y, Hu W, Yang H, Kapitonov Y, Han J, Wu J, Li Y, Zhai T. Intrinsic Defect-Driven Synergistic Synaptic Heterostructures for Gate-Free Neuromorphic Phototransistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309940. [PMID: 38373410 DOI: 10.1002/adma.202309940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Revised: 01/28/2024] [Indexed: 02/21/2024]
Abstract
The optoelectronic synaptic devices based on two-dimensional (2D) materials offer great advances for future neuromorphic visual systems with dramatically improved integration density and power efficiency. The effective charge capture and retention are considered as one vital prerequisite to realizing the synaptic memory function. However, the current 2D synaptic devices are predominantly relied on materials with artificially-engineered defects or intricate gate-controlled architectures to realize the charge trapping process. These approaches, unfortunately, suffer from the degradation of pristine materials, rapid device failure, and unnecessary complication of device structures. To address these challenges, an innovative gate-free heterostructure paradigm is introduced herein. The heterostructure presents a distinctive dome-like morphology wherein a defect-rich Fe7S8 core is enveloped snugly by a curved MoS2 dome shell (Fe7S8@MoS2), allowing the realization of effective photocarrier trapping through the intrinsic defects in the adjacent Fe7S8 core. The resultant neuromorphic devices exhibit remarkable light-tunable synaptic behaviors with memory time up to ≈800 s under single optical pulse, thus demonstrating great advances in simulating visual recognition system with significantly improved image recognition efficiency. The emergence of such heterostructures foreshadows a promising trajectory for underpinning future synaptic devices, catalyzing the realization of high-efficiency and intricate visual processing applications.
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Affiliation(s)
- Yao Deng
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shenghong Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xiaoxi Ma
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shuyang Guo
- School of Computer Science and Artificial Intelligence, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Baoxing Zhai
- Institute of Semiconductors, Henan Academy of Sciences, Zhengzhou, 450046, P. R. China
| | - Zihan Zhang
- Department of Mechanics, School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Manshi Li
- Wuhan National High Magnetic Field Centre, Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yimeng Yu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Nanostructure Research Center, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Wenhua Hu
- School of Computer Science and Artificial Intelligence, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Hui Yang
- Department of Mechanics, School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yury Kapitonov
- Department of Photonics, Saint Petersburg State University, Saint Petersburg, 199034, Russia
| | - Junbo Han
- Wuhan National High Magnetic Field Centre, Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jinsong Wu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Nanostructure Research Center, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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5
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Yang ST, Yang TH, Liang BW, Lo HC, Chang WH, Lin PY, Su CY, Lan YW. Submicron Memtransistors Made from Monocrystalline Molybdenum Disulfide. ACS NANO 2024; 18:6936-6945. [PMID: 38271620 DOI: 10.1021/acsnano.3c09030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/27/2024]
Abstract
Multiterminal memtransistors made from two-dimensional (2D) materials have garnered increasing attention in the pursuit of low-power heterosynaptic neuromorphic circuits. However, existing 2D memtransistors tend to necessitate high set voltages (>1 V) or feature defective channels, posing concerns regarding material integrity and intrinsic properties. Herein, we present a monocrystalline monolayer MoS2 memtransistor designed for operation within submicron regimes. Under reverse drain bias sweeps, our experiments reveal memristive behavior within the device, further controllable through modulation of the gate terminal. This controllability facilitates the consistent manifestation of multistate memory effects. Notably, the memtransistor behavior becomes more significant as the channel length diminishes, particularly with channel lengths below 1.6 μm, showcasing an increase in the switching ratio alongside a decrease in the set voltage with the decreasing channel length. Our optimized memtransistor demonstrates the ability to exhibit individual resistance states spanning 5 orders of magnitude, with switching drain voltages of approximately 0.05 V. To elucidate these findings, we investigate hot carrier effects and their interplay with oxide traps within the HfO2 dielectric. This work highlights the importance of memtransisor behavior in highly scaled 2D transistors, particularly those featuring low contact resistances. This understanding holds the potential to tailor memory characteristics essential for the development of energy-efficient neuromorphic devices.
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Affiliation(s)
- Shu-Ting Yang
- Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 116, Taiwan
| | - Tilo H Yang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Bor-Wei Liang
- Taiwan Semiconductor Research Institute, National Applied Research Laboratories, 300091 Hsinchu, Taiwan
| | - Han-Chieh Lo
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan
| | - Wen-Hao Chang
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan
| | - Po-Yen Lin
- Institute of Cellular and Organismic Biology, Academia Sinica, Taipei 115, Taiwan
| | - Ching-Yuan Su
- Graduate Institute of Energy Engineering, National Central University, Taoyuan 320317, Taiwan
| | - Yann-Wen Lan
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan
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6
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Lasseter J, Gellerup S, Ghosh S, Yun SJ, Vasudevan R, Unocic RR, Olunloyo O, Retterer ST, Xiao K, Randolph SJ, Rack PD. Selected Area Manipulation of MoS 2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9144-9154. [PMID: 38346142 DOI: 10.1021/acsami.3c17182] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
We demonstrate direct-write patterning of single and multilayer MoS2 via a focused electron beam-induced etching (FEBIE) process mediated with the XeF2 precursor. MoS2 etching is performed at various currents, areal doses, on different substrates, and characterized using scanning electron and atomic force microscopies as well as Raman and photoluminescence spectroscopies. Scanning transmission electron microscopy reveals a sub-40 nm etching resolution and the progression of point defects and lateral etching of the consequent unsaturated bonds. The results confirm that the electron beam-induced etching process is minimally invasive to the underlying material in comparison to ion beam techniques, which damage the subsurface material. Single-layer MoS2 field-effect transistors are fabricated, and device characteristics are compared for channels that are edited via the selected area etching process. The source-drain current at constant gate and source-drain voltage scale linearly with the edited channel width. Moreover, the mobility of the narrowest channel width decreases, suggesting that backscattered and secondary electrons collaterally affect the periphery of the removed area. Focused electron beam doses on single-layer transistors below the etching threshold were also explored as a means to modify/thin the channel layer. The FEBIE exposures showed demonstrative effects via the transistor transfer characteristics, photoluminescence spectroscopy, and Raman spectroscopy. While strategies to minimize backscattered and secondary electron interactions outside of the scanned regions require further investigation, here, we show that FEBIE is a viable approach for selective nanoscale editing of MoS2 devices.
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Affiliation(s)
- John Lasseter
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Spencer Gellerup
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Sujoy Ghosh
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Seok Joon Yun
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Rama Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Olugbenga Olunloyo
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Scott T Retterer
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Steven J Randolph
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Philip D Rack
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
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7
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Zhou H, Li S, Ang KW, Zhang YW. Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials. NANO-MICRO LETTERS 2024; 16:121. [PMID: 38372805 PMCID: PMC10876512 DOI: 10.1007/s40820-024-01335-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Accepted: 12/25/2023] [Indexed: 02/20/2024]
Abstract
The conventional computing architecture faces substantial challenges, including high latency and energy consumption between memory and processing units. In response, in-memory computing has emerged as a promising alternative architecture, enabling computing operations within memory arrays to overcome these limitations. Memristive devices have gained significant attention as key components for in-memory computing due to their high-density arrays, rapid response times, and ability to emulate biological synapses. Among these devices, two-dimensional (2D) material-based memristor and memtransistor arrays have emerged as particularly promising candidates for next-generation in-memory computing, thanks to their exceptional performance driven by the unique properties of 2D materials, such as layered structures, mechanical flexibility, and the capability to form heterojunctions. This review delves into the state-of-the-art research on 2D material-based memristive arrays, encompassing critical aspects such as material selection, device performance metrics, array structures, and potential applications. Furthermore, it provides a comprehensive overview of the current challenges and limitations associated with these arrays, along with potential solutions. The primary objective of this review is to serve as a significant milestone in realizing next-generation in-memory computing utilizing 2D materials and bridge the gap from single-device characterization to array-level and system-level implementations of neuromorphic computing, leveraging the potential of 2D material-based memristive devices.
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Affiliation(s)
- Hangbo Zhou
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Republic of Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Republic of Singapore.
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Republic of Singapore.
| | - Yong-Wei Zhang
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore.
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8
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Ansari S, Bianconi S, Kang CM, Mohseni H. From Material to Cameras: Low-Dimensional Photodetector Arrays on CMOS. SMALL METHODS 2024; 8:e2300595. [PMID: 37501320 DOI: 10.1002/smtd.202300595] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Revised: 06/25/2023] [Indexed: 07/29/2023]
Abstract
The last two decades have witnessed a dramatic increase in research on low-dimensional material with exceptional optoelectronic properties. While low-dimensional materials offer exciting new opportunities for imaging, their integration in practical applications has been slow. In fact, most existing reports are based on single-pixel devices that cannot rival the quantity and quality of information provided by massively parallelized mega-pixel imagers based on complementary metal-oxide semiconductor (CMOS) readout electronics. The first goal of this review is to present new opportunities in producing high-resolution cameras using these new materials. New photodetection methods and materials in the field are presented, and the challenges involved in their integration on CMOS chips for making high-resolution cameras are discussed. Practical approaches are then presented to address these challenges and methods to integrate low-dimensional material on CMOS. It is also shown that such integrations could be used for ultra-low noise and massively parallel testing of new material and devices. The second goal of this review is to present the colossal untapped potential of low-dimensional material in enabling the next-generation of low-cost and high-performance cameras. It is proposed that low-dimensional materials have the natural ability to create excellent bio-inspired artificial imaging systems with unique features such as in-pixel computing, multi-band imaging, and curved retinas.
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Affiliation(s)
- Samaneh Ansari
- Electrical and Computer Engneering Department, Northwestern University, Evanston, IL, 60208, USA
| | - Simone Bianconi
- Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, 91109, USA
| | - Chang-Mo Kang
- Photonic Semiconductor Research Center, Korea Photonics Technology Institute, Gwangju, 61007, Republic of Korea
| | - Hooman Mohseni
- Electrical and Computer Engneering Department, Northwestern University, Evanston, IL, 60208, USA
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9
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Wang Z, Wen X, Zou K, Meng Y, Zeng J, Wang J, Hu H, Hu X. Enhancement of silicon sub-bandgap photodetection by helium-ion implantation. FRONTIERS OF OPTOELECTRONICS 2023; 16:41. [PMID: 38055098 DOI: 10.1007/s12200-023-00096-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Accepted: 11/03/2023] [Indexed: 12/07/2023]
Abstract
Silicon sub-bandgap photodetectors can detect light at the infrared telecommunication wavelengths but with relatively weak photo-response. In this work, we demonstrate the enhancement of sub-bandgap photodetection in silicon by helium-ion implantation, without affecting the transparency that is an important beneficial feature of this type of photodetectors. With an implantation dose of 1 × 1013 ions/cm2, the minimal detectable optical power can be improved from - 33.2 to - 63.1 dBm, or, by 29.9 dB, at the wavelength of 1550 nm, and the photo-response at the same optical power (- 10 dBm) can be enhanced by approximately 18.8 dB. Our work provides a method for strategically modifying the intrinsic trade-off between transparency and strong photo-responses of this type of photodetectors.
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Affiliation(s)
- Zhao Wang
- School of Precision Instrument and Optoelectronic Engineering, Tianjin University, Tianjin, 300072, China
- Key Laboratory of Optoelectronic Information Science and Technology, Ministry of Education, Tianjin, 300072, China
| | - Xiaolei Wen
- Center for Micro and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, 230026, China
| | - Kai Zou
- School of Precision Instrument and Optoelectronic Engineering, Tianjin University, Tianjin, 300072, China
- Key Laboratory of Optoelectronic Information Science and Technology, Ministry of Education, Tianjin, 300072, China
| | - Yun Meng
- School of Precision Instrument and Optoelectronic Engineering, Tianjin University, Tianjin, 300072, China
- Key Laboratory of Optoelectronic Information Science and Technology, Ministry of Education, Tianjin, 300072, China
| | - Jinwei Zeng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
- Optics Valley Laboratory, Wuhan, 430074, China
| | - Jian Wang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
- Optics Valley Laboratory, Wuhan, 430074, China
| | - Huan Hu
- ZJUI Institute, International Campus, Zhejiang University, Haining, 311400, China.
- State Key Laboratory of Fluidic Power & Mechanical Systems, Zhejiang University, Hangzhou, 310027, China.
| | - Xiaolong Hu
- School of Precision Instrument and Optoelectronic Engineering, Tianjin University, Tianjin, 300072, China.
- Key Laboratory of Optoelectronic Information Science and Technology, Ministry of Education, Tianjin, 300072, China.
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
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10
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Sleziona S, Pelella A, Faella E, Kharsah O, Skopinski L, Maas A, Liebsch Y, Schmeink J, Di Bartolomeo A, Schleberger M. Manipulation of the electrical and memory properties of MoS 2 field-effect transistors by highly charged ion irradiation. NANOSCALE ADVANCES 2023; 5:6958-6966. [PMID: 38059017 PMCID: PMC10696994 DOI: 10.1039/d3na00543g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 10/24/2023] [Indexed: 12/08/2023]
Abstract
Field-effect transistors based on molybdenum disulfide (MoS2) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to adsorbates, or defects either in the MoS2 lattice or in the underlying substrate. We fabricated MoS2 field-effect transistors on SiO2/Si substrates, irradiated these devices with Xe30+ ions at a kinetic energy of 180 keV to deliberately introduce defects and studied the resulting changes of their electrical and hysteretic properties. We find clear influences of the irradiation: while the charge carrier mobility decreases linearly with increasing ion fluence (up to only 20% of its initial value) the conductivity actually increases again after an initial drop of around two orders of magnitude. We also find a significantly reduced n-doping (≈1012 cm-2) and a well-developed hysteresis after the irradiation. The hysteresis height increases with increasing ion fluence and enables us to characterize the irradiated MoS2 field-effect transistor as a memory device with remarkably longer relaxation times (≈ minutes) compared to previous works.
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Affiliation(s)
- Stephan Sleziona
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - Aniello Pelella
- Department of Physics "E. R. Caianiello", University of Salerno, and CNR-SPIN via Giovanni Paolo II Fisciano 84084 Salerno Italy
| | - Enver Faella
- Department of Physics "E. R. Caianiello", University of Salerno, and CNR-SPIN via Giovanni Paolo II Fisciano 84084 Salerno Italy
| | - Osamah Kharsah
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - Lucia Skopinski
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - André Maas
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - Yossarian Liebsch
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - Jennifer Schmeink
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
| | - Antonio Di Bartolomeo
- Department of Physics "E. R. Caianiello", University of Salerno, and CNR-SPIN via Giovanni Paolo II Fisciano 84084 Salerno Italy
| | - Marika Schleberger
- Faculty of Physics and CENIDE, University of Duisburg-Essen Lotharstraße 1 D-47057 Duisburg Germany
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11
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Huang F, Ke C, Li J, Chen L, Yin J, Li X, Wu Z, Zhang C, Xu F, Wu Y, Kang J. Controllable Resistive Switching in ReS 2 /WS 2 Heterostructure for Nonvolatile Memory and Synaptic Simulation. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302813. [PMID: 37530215 PMCID: PMC10558669 DOI: 10.1002/advs.202302813] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2023] [Revised: 07/10/2023] [Indexed: 08/03/2023]
Abstract
Memristors with nonvolatile storage performance and simulated synaptic functions are regarded as one of the critical devices to overcome the bottleneck in traditional von Neumann computer architecture. 2D van der Waals heterostructures have paved a new way for the development of advanced memristors by integrating the intriguing features of different materials and offering additional controllability over their optoelectronic properties. Herein, planar memristors with both electrical and optical tunability based on ReS2 /WS2 van der Waals heterostructure are demonstrated. The devices show unique unipolar nonvolatile behavior with high Roff /Ron ratio of up to 106 , desirable endurance, and retention, which are superior to pure ReS2 and WS2 devices. When decreasing the channel length, the set voltage can be notably reduced while the high Roff /Ron ratios are retained. By introducing electrostatic doping through the gate control, the set voltage can be tailored in a wide range from 4.50 to 0.40 V. Furthermore, biological synaptic functions and plasticity, including spike rate-dependent plasticity and paired-pulse facilitation, are successfully realized. By employing optical illumination, resistive switching can also be modulated, which is dependent on the illumination energy and power. A mechanism related to the interlayer charge transfer controlled by optical excitation is revealed.
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Affiliation(s)
- Feihong Huang
- Department of PhysicsEngineering Research Centre for Micro‐Nano Optoelectronic Materials and Devices at Education MinistryFujian Provincial Key Laboratory of Semiconductor Materials and ApplicationsXiamen UniversityXiamen361005P. R. China
| | - Congming Ke
- Department of PhysicsEngineering Research Centre for Micro‐Nano Optoelectronic Materials and Devices at Education MinistryFujian Provincial Key Laboratory of Semiconductor Materials and ApplicationsXiamen UniversityXiamen361005P. R. China
| | - Jinan Li
- Department of PhysicsEngineering Research Centre for Micro‐Nano Optoelectronic Materials and Devices at Education MinistryFujian Provincial Key Laboratory of Semiconductor Materials and ApplicationsXiamen UniversityXiamen361005P. R. China
| | - Li Chen
- Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo315211P. R. China
| | - Jun Yin
- Pen‐Tung Sah Institute of Micro‐Nano Science and TechnologyXiamen UniversityXiamen361005P. R. China
| | - Xu Li
- Department of PhysicsEngineering Research Centre for Micro‐Nano Optoelectronic Materials and Devices at Education MinistryFujian Provincial Key Laboratory of Semiconductor Materials and ApplicationsXiamen UniversityXiamen361005P. R. China
| | - Zhiming Wu
- Department of PhysicsEngineering Research Centre for Micro‐Nano Optoelectronic Materials and Devices at Education MinistryFujian Provincial Key Laboratory of Semiconductor Materials and ApplicationsXiamen UniversityXiamen361005P. R. China
| | - Chunmiao Zhang
- Department of PhysicsEngineering Research Centre for Micro‐Nano Optoelectronic Materials and Devices at Education MinistryFujian Provincial Key Laboratory of Semiconductor Materials and ApplicationsXiamen UniversityXiamen361005P. R. China
| | - Feiya Xu
- Department of PhysicsEngineering Research Centre for Micro‐Nano Optoelectronic Materials and Devices at Education MinistryFujian Provincial Key Laboratory of Semiconductor Materials and ApplicationsXiamen UniversityXiamen361005P. R. China
| | - Yaping Wu
- Department of PhysicsEngineering Research Centre for Micro‐Nano Optoelectronic Materials and Devices at Education MinistryFujian Provincial Key Laboratory of Semiconductor Materials and ApplicationsXiamen UniversityXiamen361005P. R. China
| | - Junyong Kang
- Department of PhysicsEngineering Research Centre for Micro‐Nano Optoelectronic Materials and Devices at Education MinistryFujian Provincial Key Laboratory of Semiconductor Materials and ApplicationsXiamen UniversityXiamen361005P. R. China
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12
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Aldana S, Zhang H. Unravelling the Data Retention Mechanisms under Thermal Stress on 2D Memristors. ACS OMEGA 2023; 8:27543-27552. [PMID: 37546646 PMCID: PMC10398860 DOI: 10.1021/acsomega.3c03200] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/09/2023] [Accepted: 07/07/2023] [Indexed: 08/08/2023]
Abstract
Memristors based on two-dimensional (2D) materials are a rapidly growing research area due to their potential in energy-efficient in-memory processing and neuromorphic computing. However, the data retention of these emerging memristors remains sparsely investigated, despite its crucial importance to device performance and reliability. In this study, we employ kinetic Monte-Carlo simulations to investigate the data retention of a 2D planar memristor. The operation of the memristor depends on field-driven on defect migration, while thermal diffusion gradually evens the defect distribution, leading to the degradation of the high resistance state (HRS) and diminishing the ON/OFF ratio. Notably, we examine the resilience of devices based on single crystals of transition metal dichalcogenides (TMDs) in harsh environments. Specifically, our simulations show that MoS2-based devices have negligible degradation after 10 years of thermal annealing at 400 K. Furthermore, the variability in data retention lifetime across different temperatures is less than 22%, indicating a relatively consistent performance over a range of thermal conditions. We also demonstrate that device miniaturization does not compromise data retention lifetime. Moreover, employing materials with higher activation energy for defect migration can significantly enhance data retention at the cost of increased switching voltage. These findings shed light on the behavior of 2D memristors and pave the way for their optimization in practical applications.
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Affiliation(s)
- Samuel Aldana
- Centre
for Research on Adaptive Nanostructures and Nanodevices (CRANN) and
Advanced Materials and Bioengineering Research (AMBER) Research Centers, Trinity College Dublin, Dublin D02 PN40, Ireland
- School
of Physics, Trinity College Dublin, Dublin D02 PN40, Ireland
| | - Hongzhou Zhang
- Centre
for Research on Adaptive Nanostructures and Nanodevices (CRANN) and
Advanced Materials and Bioengineering Research (AMBER) Research Centers, Trinity College Dublin, Dublin D02 PN40, Ireland
- School
of Physics, Trinity College Dublin, Dublin D02 PN40, Ireland
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13
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Huh W, Lee D, Jang S, Kang JH, Yoon TH, So JP, Kim YH, Kim JC, Park HG, Jeong HY, Wang G, Lee CH. Heterosynaptic MoS 2 Memtransistors Emulating Biological Neuromodulation for Energy-Efficient Neuromorphic Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211525. [PMID: 36930856 DOI: 10.1002/adma.202211525] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Revised: 03/04/2023] [Indexed: 06/16/2023]
Abstract
Heterosynaptic neuromodulation is a key enabler for energy-efficient and high-level biological neural processing. However, such manifold synaptic modulation cannot be emulated using conventional memristors and synaptic transistors. Thus, reported herein is a three-terminal heterosynaptic memtransistor using an intentional-defect-generated molybdenum disulfide channel. Particularly, the defect-mediated space-charge-limited conduction in the ultrathin channel results in memristive switching characteristics between the source and drain terminals, which are further modulated using a gate terminal according to the gate-tuned filling of trap states. The device acts as an artificial synapse controlled by sub-femtojoule impulses from both the source and gate terminals, consuming lower energy than its biological counterpart. In particular, electrostatic gate modulation, corresponding to biological neuromodulation, additionally regulates the dynamic range and tuning rate of the synaptic weight, independent of the programming (source) impulses. Notably, this heterosynaptic modulation not only improves the learning accuracy and efficiency but also reduces energy consumption in the pattern recognition. Thus, the study presents a new route leading toward the realization of highly networked and energy-efficient neuromorphic electronics.
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Affiliation(s)
- Woong Huh
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Donghun Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Seonghoon Jang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Jung Hoon Kang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Tae Hyun Yoon
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Jae-Pil So
- Department of Physics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Yeon Ho Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Jong Chan Kim
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Hu Young Jeong
- UNIST Central Research Facilities (UCRF), Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Gunuk Wang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Department of Integrative Energy Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, Republic of Korea
| | - Chul-Ho Lee
- Department of Electrical and Computer Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
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14
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Aldana S, Jadwiszczak J, Zhang H. On the switching mechanism and optimisation of ion irradiation enabled 2D MoS 2 memristors. NANOSCALE 2023; 15:6408-6416. [PMID: 36929381 DOI: 10.1039/d2nr06810a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit enhanced tunability, scalability and electrical reliability. However, the fundamental of the switching is yet to be clarified before they can meet industrial standards in terms of endurance, variability, resistance ratio, and scalability. This new physical simulator based on the kinetic Monte Carlo (kMC) algorithm reproduces the defect migration process in 2D materials and sheds light on the operation of 2D memristors. The present work employs the simulator to study a two-dimensional 2H-MoS2 planar resistive switching (RS) device with an asymmetric defect concentration introduced by ion irradiation. The simulations unveil the non-filamentary RS process and propose routes to optimize the device's performance. For instance, the resistance ratio can be increased by 53% by controlling the concentration and distribution of defects, while the variability can be reduced by 55% by increasing 5-fold the device size from 10 to 50 nm. Our simulator also explains the trade-offs between the resistance ratio and variability, resistance ratio and scalability, and variability and scalability. Overall, the simulator may enable an understanding and optimization of devices to expedite cutting-edge applications.
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Affiliation(s)
- Samuel Aldana
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Advanced Materials and Bioengineering Research (AMBER) Research Centers, School of Physics, Trinity College Dublin, Dublin, D02 PN40, Ireland.
| | - Jakub Jadwiszczak
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Advanced Materials and Bioengineering Research (AMBER) Research Centers, School of Physics, Trinity College Dublin, Dublin, D02 PN40, Ireland.
| | - Hongzhou Zhang
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Advanced Materials and Bioengineering Research (AMBER) Research Centers, School of Physics, Trinity College Dublin, Dublin, D02 PN40, Ireland.
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15
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Fu J, Wang J, He X, Ming J, Wang L, Wang Y, Shao H, Zheng C, Xie L, Ling H. Pseudo-transistors for emerging neuromorphic electronics. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2180286. [PMID: 36970452 PMCID: PMC10035954 DOI: 10.1080/14686996.2023.2180286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/10/2022] [Revised: 01/15/2023] [Accepted: 02/10/2023] [Indexed: 06/18/2023]
Abstract
Artificial synaptic devices are the cornerstone of neuromorphic electronics. The development of new artificial synaptic devices and the simulation of biological synaptic computational functions are important tasks in the field of neuromorphic electronics. Although two-terminal memristors and three-terminal synaptic transistors have exhibited significant capabilities in the artificial synapse, more stable devices and simpler integration are needed in practical applications. Combining the configuration advantages of memristors and transistors, a novel pseudo-transistor is proposed. Here, recent advances in the development of pseudo-transistor-based neuromorphic electronics in recent years are reviewed. The working mechanisms, device structures and materials of three typical pseudo-transistors, including tunneling random access memory (TRAM), memflash and memtransistor, are comprehensively discussed. Finally, the future development and challenges in this field are emphasized.
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Affiliation(s)
- Jingwei Fu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Jie Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Xiang He
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Jianyu Ming
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Le Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Yiru Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - He Shao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Chaoyue Zheng
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
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16
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Lanza M, Hui F, Wen C, Ferrari AC. Resistive Switching Crossbar Arrays Based on Layered Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205402. [PMID: 36094019 DOI: 10.1002/adma.202205402] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2022] [Revised: 08/25/2022] [Indexed: 06/15/2023]
Abstract
Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices mm- 2 ) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase-change materials and metal oxides is that their electrical properties can be adjusted with a higher precision. Here, the key figures-of-merit and procedures to implement LM-based RS devices are defined. LM-based RS devices fabricated using methods compatible with industry are identified and discussed. The focus is on small devices (size < 9 µm2 ) arranged in crossbar structures, since larger devices may be affected by artifacts, such as grain boundaries and flake junctions. How to enhance device performance, so to accelerate the development of this technology, is also discussed.
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Affiliation(s)
- Mario Lanza
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Fei Hui
- School of Materials Science and Engineering, The Key Laboratory of Material, Processing and Mold of the Ministry of Education, Henan Key Laboratory of Advanced, Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Chao Wen
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
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17
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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18
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Moon G, Min SY, Han C, Lee SH, Ahn H, Seo SY, Ding F, Kim S, Jo MH. Atomically Thin Synapse Networks on Van Der Waals Photo-Memtransistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203481. [PMID: 35953281 DOI: 10.1002/adma.202203481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2022] [Revised: 07/30/2022] [Indexed: 06/15/2023]
Abstract
A new type of atomically thin synaptic network on van der Waals (vdW) heterostructures is reported, where each ultrasmall cell (≈2 nm thick) built with trilayer WS2 semiconductor acts as a gate-tunable photoactive synapse, i.e., a photo-memtransistor. A train of UV pulses onto the WS2 memristor generates dopants in atomic-level precision by direct light-lattice interactions, which, along with the gate tunability, leads to the accurate modulation of the channel conductance for potentiation and depression of the synaptic cells. Such synaptic dynamics can be explained by a parallel atomistic resistor network model. In addition, it is shown that such a device scheme can generally be realized in other 2D vdW semiconductors, such as MoS2 , MoSe2 , MoTe2 , and WSe2 . Demonstration of these atomically thin photo-memtransistor arrays, where the synaptic weights can be tuned for the atomistic defect density, provides implications for a new type of artificial neural networks for parallel matrix computations with an ultrahigh integration density.
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Affiliation(s)
- Gunho Moon
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Seok Young Min
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Cheolhee Han
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Suk-Ho Lee
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Heonsu Ahn
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Seung-Young Seo
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Seyoung Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Moon-Ho Jo
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
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19
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Yan X, Qian JH, Sangwan VK, Hersam MC. Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108025. [PMID: 34813677 DOI: 10.1002/adma.202108025] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2021] [Revised: 11/07/2021] [Indexed: 06/13/2023]
Abstract
Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy-efficient information processing of the brain. While non-volatile memory (NVM) based on resistive switches, phase-change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi-terminal device concepts are required for more sophisticated bio-realistic functions. Of particular interest are memtransistors based on low-dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi-terminal NVM devices including dual-gated floating-gate memories, dual-gated ferroelectric transistors, and dual-gated van der Waals heterojunctions. The different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase-changes properties of nanomaterials. Finally, strategies for achieving wafer-scale integration of memtransistors and multi-terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.
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Affiliation(s)
- Xiaodong Yan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Justin H Qian
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
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20
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Jang HY, Kwon O, Nam JH, Kwon JD, Kim Y, Park W, Cho B. Highly Reproducible Heterosynaptic Plasticity Enabled by MoS 2/ZrO 2-x Heterostructure Memtransistor. ACS APPLIED MATERIALS & INTERFACES 2022; 14:52173-52181. [PMID: 36368778 DOI: 10.1021/acsami.2c15497] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Electrically tunable resistive switching of a polycrystalline MoS2-based memtransistor has attracted a great deal of attention as an essential synaptic component of neuromorphic circuitry because its switching characteristics from the field-induced migration of sulfur defects in the MoS2 grain boundaries can realize multilevel conductance tunability and heterosynaptic functionality. However, reproducible switching properties in the memtransistor are usually disturbed by the considerable difficulty in controlling the concentration and distribution of the intrinsically existing sulfur defects. Herein, we demonstrate reliable heterosynaptic characteristics using a memtransistor device with a MoS2/ZrO2-x heterostructure. Compared to the control device with the MoS2 semiconducting channel, the Schottky barrier height was more effectively modulated by the insertion of the insulating ZrO2-x layer below the MoS2, confirmed by an ultraviolet photoelectron spectroscopy analysis and the corresponding energy-band structures. The MoS2/ZrO2-x memtransistor accomplishes dual-terminal (drain and gate electrode) stimulated multilevel conductance owing to the tunable resistive switching behavior under varying gate voltages. Furthermore, the memtransistor exhibits long-term potentiation/depression endurance cycling over 7000 pulses and stable pulse cycling behavior by the pulse stimulus from different terminal regions. The promising candidate as an essential synaptic component of the MoS2/ZrO2-x memtransistors for neuromorphic systems results from the high recognition accuracy (∼92%) of the deep neural network simulation test, based on the training and inference of handwritten numbers (0-9). The simple memtransistor structure facilitates the implementation of complex neural circuitry.
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Affiliation(s)
- Hye Yeon Jang
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Ojun Kwon
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Jae Hyeon Nam
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Jung-Dae Kwon
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science, 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea
| | - Yonghun Kim
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science, 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea
| | - Woojin Park
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Byungjin Cho
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
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21
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Sivan M, Leong JF, Ghosh J, Tang B, Pan J, Zamburg E, Thean AVY. Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability. ACS NANO 2022; 16:14308-14322. [PMID: 36103401 PMCID: PMC10653274 DOI: 10.1021/acsnano.2c04504] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2022] [Accepted: 09/06/2022] [Indexed: 06/15/2023]
Abstract
Memtransistors that combine the properties of transistor and memristor hold significant promise for in-memory computing. While superior data storage capability is achieved in memtransistors through gate voltage-induced conductance modulation, the lateral device configuration would not only result in high write bias, which compromises the power efficiency, but also suffers from unsuccessful memory reset that leads to reliability concerns. To circumvent such performance limitations, an advanced physics-based model is required to uncover the dynamic resistive switching behavior and deduce the key driving parameters for the switching process. This work demonstrates a self-consistent physics-based model which incorporates the often-overlooked effects of lattice temperature, vacancy dynamics, and channel electrostatics to accurately solve the interaction between gate potential, ions, and carriers on the memristive switching mechanism. The completed model is carefully calibrated with an ambipolar WSe2 memtransistor and hence enables the investigation of the carrier polarity effect (electrons vs holes) on vacancy transport. Nevertheless, the validity of the model can be extended to different materials by a simple material-dependent parameter modification. Building upon the existing understanding of Schottky barrier height modulation, our study reveals three key insights─leveraging threshold voltage shifts to lower write bias; optimizing lattice temperature distribution and read bias polarity to achieve successful memory state recovery; engineering contact work function to overcome the detrimental parasitic current flow in short channel ambipolar memtransistors. Therefore, understanding the significant correlation between the switching mechanisms, different material systems, and device structures allows performance optimization of operating modes and device designs for future memtransistors-based computing systems.
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Affiliation(s)
- Maheswari Sivan
- Department of Electrical
and Computer Engineering, National University
of Singapore, Singapore 117576, Singapore
| | - Jin Feng Leong
- Department of Electrical
and Computer Engineering, National University
of Singapore, Singapore 117576, Singapore
| | - Joydeep Ghosh
- Department of Electrical
and Computer Engineering, National University
of Singapore, Singapore 117576, Singapore
| | - Baoshan Tang
- Department of Electrical
and Computer Engineering, National University
of Singapore, Singapore 117576, Singapore
| | - Jieming Pan
- Department of Electrical
and Computer Engineering, National University
of Singapore, Singapore 117576, Singapore
| | - Evgeny Zamburg
- Department of Electrical
and Computer Engineering, National University
of Singapore, Singapore 117576, Singapore
| | - Aaron Voon-Yew Thean
- Department of Electrical
and Computer Engineering, National University
of Singapore, Singapore 117576, Singapore
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22
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Wen X, Zhang L, Tian F, Xu Y, Hu H. Versatile Approach of Silicon Nanofabrication without Resists: Helium Ion-Bombardment Enhanced Etching. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3269. [PMID: 36234396 PMCID: PMC9565762 DOI: 10.3390/nano12193269] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/27/2022] [Revised: 09/12/2022] [Accepted: 09/15/2022] [Indexed: 06/16/2023]
Abstract
Herein, we report a helium ion-bombardment enhanced etching method for silicon nanofabrication without the use of resists; furthermore, we demonstrate its unique advantages for straightforward fabrication on irregular surfaces and prototyping nano-electro-mechanical system devices, such as self-enclosed Si nanofluidic channels and mechanical nano-resonators. This method employs focused helium ions to selectively irradiate single-crystal Si to disrupt the crystal lattice and transform it into an amorphous phase that can be etched at a rate 200 times higher than that of the non-irradiated Si. Due to the unique raindrop shape of the interaction volumes between helium ions and Si, buried Si nanofluidic channels can be constructed using only one dosing step, followed by one step of conventional chemical etching. Moreover, suspended Si nanobeams can be fabricated without an additional undercut step for release owing to the unique raindrop shape. In addition, we demonstrate nanofabrication directly on 3D micro/nano surfaces, such as an atomic force microscopic probe, which is challenging for conventional nanofabrication due to the requirement of photoresist spin coating. Finally, this approach can also be extended to assist in the etching of other materials that are difficult to etch, such as silicon carbide (SiC).
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Affiliation(s)
- Xiaolei Wen
- Center for Micro and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei 230026, China
| | - Lansheng Zhang
- ZJUI Institute, Zhejiang University, Haining 314400, China
| | - Feng Tian
- ZJUI Institute, Zhejiang University, Haining 314400, China
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, China
| | - Yang Xu
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, China
| | - Huan Hu
- ZJUI Institute, Zhejiang University, Haining 314400, China
- State Key Laboratory of Fluidic Power & Mechanical Systems, Zhejiang University, Hangzhou 310027, China
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23
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Duan H, Cheng S, Qin L, Zhang X, Xie B, Zhang Y, Jie W. Low-Power Memristor Based on Two-Dimensional Materials. J Phys Chem Lett 2022; 13:7130-7138. [PMID: 35900941 DOI: 10.1021/acs.jpclett.2c01962] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The memristor is an excellent candidate for nonvolatile memory and neuromorphic computing. Recently, two-dimensional (2D) materials have been developed for use in memristors with high-performance resistive switching characteristics, such as high on/off ratios, low SET/RESET voltages, good retention and endurance, fast switching speed, and low power and energy consumption. Low-power memristors are highly desired for recent fast-speed and energy-efficient artificial neuromorphic networks. This Perspective focuses on the recent progress of low-power memristors based on 2D materials, providing a condensed overview of relevant developments in memristive performance, physical mechanism, material modification, and device assembly as well as potential applications. The detailed research status of memristors has been reviewed based on different 2D materials from insulating hexagonal boron nitride, semiconducting transition metal dichalcogenides, to some newly developed 2D materials. Furthermore, a brief summary introducing the perspectives and challenges is included, with the aim of providing an insightful guide for this research field.
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Affiliation(s)
- Huan Duan
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Siqi Cheng
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Ling Qin
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Xuelian Zhang
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Bingyang Xie
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Yang Zhang
- Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China
| | - Wenjing Jie
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
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24
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Li S, Pam ME, Li Y, Chen L, Chien YC, Fong X, Chi D, Ang KW. Wafer-Scale 2D Hafnium Diselenide Based Memristor Crossbar Array for Energy-Efficient Neural Network Hardware. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2103376. [PMID: 34510567 DOI: 10.1002/adma.202103376] [Citation(s) in RCA: 50] [Impact Index Per Article: 25.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2021] [Revised: 07/28/2021] [Indexed: 06/13/2023]
Abstract
Memristor crossbar with programmable conductance could overcome the energy consumption and speed limitations of neural networks when executing core computing tasks in image processing. However, the implementation of crossbar array (CBA) based on ultrathin 2D materials is hindered by challenges associated with large-scale material synthesis and device integration. Here, a memristor CBA is demonstrated using wafer-scale (2-inch) polycrystalline hafnium diselenide (HfSe2 ) grown by molecular beam epitaxy, and a metal-assisted van der Waals transfer technique. The memristor exhibits small switching voltage (0.6 V), low switching energy (0.82 pJ), and simultaneously achieves emulation of synaptic weight plasticity. Furthermore, the CBA enables artificial neural network with a high recognition accuracy of 93.34%. Hardware multiply-and-accumulate (MAC) operation with a narrow error distribution of 0.29% is also demonstrated, and a high power efficiency of greater than 8-trillion operations per second per Watt is achieved. Based on the MAC results, hardware convolution image processing can be performed using programmable kernels (i.e., soft, horizontal, and vertical edge enhancement), which constitutes a vital function for neural network hardware.
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Affiliation(s)
- Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Mei-Er Pam
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yesheng Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Li Chen
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yu-Chieh Chien
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Xuanyao Fong
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Dongzhi Chi
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore, 138634, Singapore
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25
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Wu X, Chen X, Yang R, Zhan J, Ren Y, Li K. Recent Advances on Tuning the Interlayer Coupling and Properties in van der Waals Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105877. [PMID: 35044721 DOI: 10.1002/smll.202105877] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2021] [Revised: 11/25/2021] [Indexed: 06/14/2023]
Abstract
2D van der Waals (vdW) heterostructures are receiving increasing research attention due to the theoretically amazing properties and unprecedented application potential. However, the as-synthesized heterostructures are generally underperforming due to the weak interlayer coupling, which inspires the researchers to find ways to modulate the interlayer coupling and properties, realizing the tailored performance for actual applications. There have been a lot of publications regarding the controllable regulation of the structures and properties of 2D vdW heterostructures in the past few years, while a review work summarizing the current advances is not yet available, though it is significant. This paper conducts a state-of-the-art review regarding the current research progress of performance modulation of vdW heterostructures by different techniques. First, the general synthesis methods of vdW heterostructures are summarized. Then, different performance modulation techniques, that is, mechanical-based, external fields-assisted, and particle beam irradiation-based methods, are discussed and compared in detail. Some of the newly proposed concepts are described. Thereafter, applications of vdW heterostructures with tailored properties are reviewed for the application prospects of the topic around this area. Moreover, the future research challenges and prospects are discussed, aiming at triggering more research interest and device applications around this topic.
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Affiliation(s)
- Xin Wu
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong, 519082, China
| | - Xiyue Chen
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong, 519082, China
| | - Ruxue Yang
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong, 519082, China
| | - Jianbin Zhan
- State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, 400044, China
| | - Yingzhi Ren
- State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, 400044, China
| | - Kun Li
- State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, 400044, China
- Chongqing Key Laboratory of Metal Additive Manufacturing (3D Printing), Chongqing University, Chongqing, 400044, China
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26
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Yin L, Cheng R, Wen Y, Zhai B, Jiang J, Wang H, Liu C, He J. High-Performance Memristors Based on Ultrathin 2D Copper Chalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108313. [PMID: 34989444 DOI: 10.1002/adma.202108313] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2021] [Revised: 12/21/2021] [Indexed: 06/14/2023]
Abstract
Copper chalcogenides represent a class of materials with unique crystal structures, high electrical conductivity, and earth abundance, and are recognized as promising candidates for next-generation green electronics. However, their 2D structures and the corresponding electronic properties have rarely been touched. Herein, a series of ultrathin copper chalcogenide nanosheets with thicknesses down to two unit cells are successfully synthesized, including layered Cu2 Te, as well as nonlayered CuSe and Cu9 S5 , via van der Waals epitaxy, and their nonvolatile memristive behavior is investigated for the first time. Benefiting from the highly active Cu ions with low migration barriers, the memristors based on ultrathin 2D copper chalcogenide crystals exhibit relatively small switching voltage (≈0.4 V), fast switching speed, high switching uniformity, and wide operating temperature range (from 80 to 420 K), as well as stable retention and good cyclic endurance. These results demonstrate their tangible applications in future low-power, cryogenic, and high temperature harsh electronics.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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27
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Kwon O, Oh S, Park H, Jeong SH, Park W, Cho B. In-depth analysis on electrical parameters of floating gate IGZO synaptic transistor affecting pattern recognition accuracy. NANOTECHNOLOGY 2022; 33:215201. [PMID: 35147525 DOI: 10.1088/1361-6528/ac5444] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2021] [Accepted: 02/09/2022] [Indexed: 06/14/2023]
Abstract
The reliable conductance modulation of synaptic devices is key when implementing high-performance neuromorphic systems. Herein, we propose a floating gate indium gallium zinc oxide (IGZO) synaptic device with an aluminum trapping layer to investigate the correlation between its diverse electrical parameters and pattern recognition accuracy. Basic synaptic properties such as excitatory postsynaptic current, paired pulse facilitation, long/short term memory, and long-term potentiation/depression are demonstrated in the IGZO synaptic transistor. The effects of pulse tuning conditions associated with the pulse voltage magnitude, interval, duration, and cycling number of the applied pulses on the conductance update are systematically investigated. It is discovered that both the nonlinearity of the conductance update and cycle-to-cycle variation should be critically considered using an artificial neural network simulator to ensure the high pattern recognition accuracy of Modified National Institute of Standards and Technology (MNIST) handwritten digit images. The highest recognition rate of the MNIST handwritten dataset is 94.06% for the most optimized pulse condition. Finally, a systematic study regarding the synaptic parameters must be performed to optimize the developed synapse device.
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Affiliation(s)
- Ojun Kwon
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Seyoung Oh
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Heejeong Park
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Soo-Hong Jeong
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Woojin Park
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Byungjin Cho
- Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
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28
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Graphene/Ferroelectric (Ge-Doped HfO2) Adaptable Transistors Acting as Reconfigurable Logic Gates. NANOMATERIALS 2022; 12:nano12020279. [PMID: 35055296 PMCID: PMC8778263 DOI: 10.3390/nano12020279] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/14/2021] [Revised: 01/07/2022] [Accepted: 01/15/2022] [Indexed: 02/04/2023]
Abstract
We present an array of 225 field-effect transistors (FETs), where each of them has a graphene monolayer channel grown on a 3-layer deposited stack of 22 nm control HfO2/5 nm Ge-HfO2 intermediate layer/8 nm tunnel HfO2/p-Si substrate. The intermediate layer is ferroelectric and acts as a floating gate. All transistors have two top gates, while the p-Si substrate is acting as a back gate. We show that these FETs are acting memtransistors, working as two-input reconfigurable logic gates with memory, the type of the logic gate depending only on the values of the applied gate voltages and the choice of a threshold current.
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29
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Nguyen DA, Jo Y, Tran TU, Jeong MS, Kim H, Im H. Electrically and Optically Controllable p-n Junction Memtransistor Based on an Al 2 O 3 Encapsulated 2D Te/ReS 2 van der Waals Heterostructure. SMALL METHODS 2021; 5:e2101303. [PMID: 34928036 DOI: 10.1002/smtd.202101303] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2021] [Indexed: 06/14/2023]
Abstract
The exploration of memtransistors as a combination of a memristor and a transistor has recently attracted intensive attention because it offers a promising candidate for next-generation multilevel nonvolatile memories and synaptic devices. However, the present state-of-the-art memtransistors, which are based on a single material, such as MoS2 or perovskite, exhibit a relatively low switching ratio, require extremely high electric fields to modulate bistable resistance states and do not perform multifunctional operations. Here, the realization of an electrically and optically controllable p-n junction memtransistor using an Al2 O3 encapsulated 2D Te/ReS2 van der Waals heterostructure is reported. The hybrid memtransistor shows a reversible bipolar resistance switching behavior between a low resistance state and a high resistance state with a high switching ratio up to 106 at a low operating voltage (<10 V), high cycling endurance, and long retention time. Moreover, multiple resistance states are achieved by applying different bias voltages, gate voltages, or light powers. In addition, logical operations, including the inverter and AND/OR gates, and synaptic activities are performed by controlling the optical and electrical inputs. The work offers a novel strategy for the reliable fabrication of p-n junction memtransistors for multifunctional devices and neuromorphic applications.
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Affiliation(s)
- Duc Anh Nguyen
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Yongcheol Jo
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Thi Uyen Tran
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Mun Seok Jeong
- Department of Physics, Department of Energy Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Hyungsang Kim
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Hyunsik Im
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
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30
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Beilliard Y, Alibart F. Multi-Terminal Memristive Devices Enabling Tunable Synaptic Plasticity in Neuromorphic Hardware: A Mini-Review. FRONTIERS IN NANOTECHNOLOGY 2021. [DOI: 10.3389/fnano.2021.779070] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Open
Abstract
Neuromorphic computing based on spiking neural networks has the potential to significantly improve on-line learning capabilities and energy efficiency of artificial intelligence, specially for edge computing. Recent progress in computational neuroscience have demonstrated the importance of heterosynaptic plasticity for network activity regulation and memorization. Implementing heterosynaptic plasticity in hardware is thus highly desirable, but important materials and engineering challenges remain, calling for breakthroughs in neuromorphic devices. In this mini-review, we propose an overview of the latest advances in multi-terminal memristive devices on silicon with tunable synaptic plasticity, enabling heterosynaptic plasticity in hardware. The scalability and compatibility of the devices with industrial complementary metal oxide semiconductor (CMOS) technologies are discussed.
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31
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Huang CH, Chang H, Yang TY, Wang YC, Chueh YL, Nomura K. Artificial Synapse Based on a 2D-SnO 2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2021; 13:52822-52832. [PMID: 34714053 DOI: 10.1021/acsami.1c18329] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A new type of two-dimensional (2D) SnO2 semiconductor-based gate-tunable memristor, that is, a memtransistor, an integrated device of a memristor and a transistor, was demonstrated to advance next-generation neuromorphic computing technology. The polycrystalline 2D-SnO2 memristors derived from a low-temperature and vacuum-free liquid metal process offer several interesting resistive switching properties such as excellent digital/analog resistive switching, multistate storage, and gate-tunability function of resistance switching states. Significantly, the gate tunability function that is not achievable in conventional two-terminal memristors provides the capability to implement heterosynaptic analog switching by regulating gate bias for enabling complex neuromorphic learning. We successfully demonstrated that the gate-tunable synaptic device dynamically modulated the analog switching behavior with good linearity and an improved conductance change ratio for high recognition accuracy learning. The presented gate-tunable 2D-oxide memtransistor will advance neuromorphic device technology and open up new opportunities to design learning schemes with an extra degree of freedom.
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Affiliation(s)
- Chi-Hsin Huang
- Department of Electrical and Computer Engineering, University of California San Diego, 9500 Gilman Dr., La Jolla, California 92093, United States
| | - Hsuan Chang
- Department of Electrical and Computer Engineering, University of California San Diego, 9500 Gilman Dr., La Jolla, California 92093, United States
| | - Tzu-Yi Yang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yi-Chung Wang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Kenji Nomura
- Department of Electrical and Computer Engineering, University of California San Diego, 9500 Gilman Dr., La Jolla, California 92093, United States
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32
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Nguyen DA, Park DY, Duong NT, Lee KN, Im H, Yang H, Jeong MS. Large-Area MoS 2 via Colloidal Nanosheet Ink for Integrated Memtransistor. SMALL METHODS 2021; 5:e2100558. [PMID: 34927977 DOI: 10.1002/smtd.202100558] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2021] [Revised: 08/24/2021] [Indexed: 06/14/2023]
Abstract
2D transition metal dichalcogenides (TMDs) exhibit intriguing properties for applications in optoelectronics and electronics, among which memtransistors received extensive attention as multifunctional devices. For practical applications of 2D TMDs, large-area fabrication of the materials via reliable processes, which is in trade-off with their quality, has been a long-standing issue. Here, a simple and effective way is proposed to fabricate large-area and high-quality molybdenum disulfide thin films using MoS2 colloidal ink through a spray coating, followed by a postsulfurization process. High-quality MoS2 thin films exhibit excellent optical and electrical properties that can be utilized in field-effect transistors (FETs) and memtransistor arrays. The MoS2 FETs show an average on/off ratio of 5 × 106 and a high electron mobility of 10.34 cm2 V-1 s-1 , which can be understood by the healing of sulfur vacancies, recrystallization, and the removal of the carbon contamination of the MoS2 . These MoS2 -based memtransistors present stable operations with a high switching ratio tuned by back gate and light illumination, which is promising for multiple-levels memory and complex neuromorphic computing. This study demonstrates a new strategy to fabricate 2D TMDs with large-area and high quality for integrated optoelectronic and memory device applications.
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Affiliation(s)
- Duc Anh Nguyen
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Dae Young Park
- Department of Physics, Department of Energy Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Ngoc Thanh Duong
- Faculty of Materials Science and Engineering, Phenikaa University, Hanoi, 12116, Viet Nam
| | - Kang-Nyeoung Lee
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Hyunsik Im
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea
| | - Mun Seok Jeong
- Department of Physics, Department of Energy Engineering, Hanyang University, Seoul, 04763, Republic of Korea
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Ding G, Yang B, Chen RS, Mo WA, Zhou K, Liu Y, Shang G, Zhai Y, Han ST, Zhou Y. Reconfigurable 2D WSe 2 -Based Memtransistor for Mimicking Homosynaptic and Heterosynaptic Plasticity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2103175. [PMID: 34528382 DOI: 10.1002/smll.202103175] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2021] [Revised: 07/30/2021] [Indexed: 06/13/2023]
Abstract
The mimicking of both homosynaptic and heterosynaptic plasticity using a high-performance synaptic device is important for developing human-brain-like neuromorphic computing systems to overcome the ever-increasing challenges caused by the conventional von Neumann architecture. However, the commonly used synaptic devices (e.g., memristors and transistors) require an extra modulate terminal to mimic heterosynaptic plasticity, and their capability of synaptic plasticity simulation is limited by the low weight adjustability. In this study, a WSe2 -based memtransistor for mimicking both homosynaptic and heterosynaptic plasticity is fabricated. By applying spikes on either the drain or gate terminal, the memtransistor can mimic common homosynaptic plasticity, including spiking rate dependent plasticity, paired pulse facilitation/depression, synaptic potentiation/depression, and filtering. Benefitting from the multi-terminal input and high adjustability, the resistance state number and linearity of the memtransistor can be improved by optimizing the conditions of the two inputs. Moreover, the device can successfully mimic heterosynaptic plasticity without introducing an extra terminal and can simultaneously offer versatile reconfigurability of excitatory and inhibitory plasticity. These highly adjustable and reconfigurable characteristics offer memtransistors more freedom of choice for tuning synaptic weight, optimizing circuit design, and building artificial neuromorphic computing systems.
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Affiliation(s)
- Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Baidong Yang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ruo-Si Chen
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Wen-Ai Mo
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yang Liu
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Gang Shang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yongbiao Zhai
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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Dragoman M, Aldrigo M, Dragoman D, Iordanescu S, Dinescu A, Modreanu M. The Rise of Ferroelectricity at Nanoscale: Nanoelectronics is rediscovering the ferroelectricity. IEEE NANOTECHNOLOGY MAGAZINE 2021. [DOI: 10.1109/mnano.2021.3098217] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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35
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Wang X, Wang B, Zhang Q, Sun Y, Wang E, Luo H, Wu Y, Gu L, Li H, Liu K. Grain-Boundary Engineering of Monolayer MoS 2 for Energy-Efficient Lateral Synaptic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102435. [PMID: 34219298 DOI: 10.1002/adma.202102435] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2021] [Revised: 04/28/2021] [Indexed: 06/13/2023]
Abstract
Synaptic devices based on 2D-layered materials have emerged as high-efficiency electronic synapses and neurons for neuromorphic computing. Lateral 2D synaptic devices have the advantages of multiple functionalities by responding to diverse stimuli, but they consume large amounts of energy, far more than the human brain. Moreover, current lateral devices employ several mechanisms based on conductive filaments and grain boundaries (GBs), but their formation is random and difficult to control, also hindering their practical applications. Here, four-terminal, lateral synaptic devices with artificially engineered GBs are reported, which are made from monolayer MoS2 . With lithography-free, direct-laser-writing-controlled MoS2 /MoS2- x Oδ GBs, such synaptic devices exhibit short-term and long-term plasticity characteristics that are responsive to electric and light stimulation simultaneously. This enables detailed simulations of biological learning and cognitive processes as well as image perception and processing. In particular, the device exhibits low energy consumption, similar to that of the human brain and much lower than those of other lateral 2D synaptic devices. This work provides an effective way to fabricate lateral synaptic devices for practical application development and sheds light on controllable electrical state switching for neuromorphic computing.
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Affiliation(s)
- Xuewen Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Bolun Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Qinghua Zhang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yufei Sun
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Enze Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Hao Luo
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Lin Gu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Huanglong Li
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Tsinghua University, Beijing, 100084, China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
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36
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Deng Y, Zhuang X, Wang W, Gu R, He D, Wang L, Cheng X. Direct visualization of beam-resist interaction volume for sub-nanometer helium ion beam-lithography. NANOTECHNOLOGY 2021; 32:415302. [PMID: 34198269 DOI: 10.1088/1361-6528/ac1099] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2021] [Accepted: 07/01/2021] [Indexed: 06/13/2023]
Abstract
Interaction volume of beam-resist is a basis unit of beam-lithography, directly determines the critical parameters of beam-lithography. We have visualized the interaction volume at the state-of-the-art sub-10 nm scale by a spot irradiation of sub-nanometer helium ion beam into an approximately free-standing resist. The visualized interaction volume suggests helium ion beam has an excellent capability in nanofabrication. Specifically, helium ion beam-lithography is 1000 times more efficient than electron beam-lithography (EBL), owns a sub-4 nm resolution, can achieve a large pattern aspect ratio (greater than 8), and does not suffer from backscattering effect at a normal exposure dose. Furthermore, the interaction volume has been theoretically studied by considering the spatial distribution of energy deposited in the resist, and eventually lead to a model for pattern prediction and proximity effect corrections. We expect that, our approach to visualize the interaction volume may be applied to study other high resolution lithographic techniques such as x-ray lithography and EBL, and it may open new possibilities in other applications, like beam-imaging, beam-milling, and beam-modification.
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Affiliation(s)
- Yunsheng Deng
- Pico Center and SUSTech Core Research Facilities, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China
| | - Xin Zhuang
- Shenzhen Key Laboratory for Nanoimprint Technology, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China
- Department of Mechanical Engineering, the University of Hong Kong, Hong Kong
- HKU-Zhejiang Institute of Research and Innovation (HKU-ZIRI), Hangzhou, Zhejiang 311300, People's Republic of China
| | - Wu Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Rui Gu
- Pico Center and SUSTech Core Research Facilities, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China
| | - Dongsheng He
- Pico Center and SUSTech Core Research Facilities, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China
| | - Liqiu Wang
- Department of Mechanical Engineering, the University of Hong Kong, Hong Kong
- HKU-Zhejiang Institute of Research and Innovation (HKU-ZIRI), Hangzhou, Zhejiang 311300, People's Republic of China
| | - Xing Cheng
- Pico Center and SUSTech Core Research Facilities, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China
- Shenzhen Key Laboratory for Nanoimprint Technology, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China
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37
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Allen FI. A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2021; 12:633-664. [PMID: 34285866 PMCID: PMC8261528 DOI: 10.3762/bjnano.12.52] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2020] [Accepted: 04/30/2021] [Indexed: 05/28/2023]
Abstract
The helium ion microscope has emerged as a multifaceted instrument enabling a broad range of applications beyond imaging in which the finely focused helium ion beam is used for a variety of defect engineering, ion implantation, and nanofabrication tasks. Operation of the ion source with neon has extended the reach of this technology even further. This paper reviews the materials modification research that has been enabled by the helium ion microscope since its commercialization in 2007, ranging from fundamental studies of beam-sample effects, to the prototyping of new devices with features in the sub-10 nm domain.
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Affiliation(s)
- Frances I Allen
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
- California Institute for Quantitative Biosciences, University of California, Berkeley, CA 94720, USA
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38
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Yin L, Cheng R, Wen Y, Liu C, He J. Emerging 2D Memory Devices for In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007081. [PMID: 34105195 DOI: 10.1002/adma.202007081] [Citation(s) in RCA: 42] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2020] [Revised: 12/27/2020] [Indexed: 06/12/2023]
Abstract
It is predicted that the conventional von Neumann computing architecture cannot meet the demands of future data-intensive computing applications due to the bottleneck between the processing and memory units. To try to solve this problem, in-memory computing technology, where calculations are carried out in situ within each nonvolatile memory unit, has been intensively studied. Among various candidate materials, 2D layered materials have recently demonstrated many new features that have been uniquely exploited to build next-generation electronics. Here, the recent progress of 2D memory devices is reviewed for in-memory computing. For each memory configuration, their operation mechanisms and memory characteristics are described, and their pros and cons are weighed. Subsequently, their versatile applications for in-memory computing technology, including logic operations, electronic synapses, and random number generation are presented. Finally, the current challenges and potential strategies for future 2D in-memory computing systems are also discussed at the material, device, circuit, and architecture levels. It is hoped that this manuscript could give a comprehensive review of 2D memory devices and their applications in in-memory computing, and be helpful for this exciting research area.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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39
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Huang W, Xia X, Zhu C, Steichen P, Quan W, Mao W, Yang J, Chu L, Li X. Memristive Artificial Synapses for Neuromorphic Computing. NANO-MICRO LETTERS 2021; 13:85. [PMID: 34138298 PMCID: PMC8006524 DOI: 10.1007/s40820-021-00618-2] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2020] [Accepted: 01/29/2021] [Indexed: 05/06/2023]
Abstract
Neuromorphic computing simulates the operation of biological brain function for information processing and can potentially solve the bottleneck of the von Neumann architecture. This computing is realized based on memristive hardware neural networks in which synaptic devices that mimic biological synapses of the brain are the primary units. Mimicking synaptic functions with these devices is critical in neuromorphic systems. In the last decade, electrical and optical signals have been incorporated into the synaptic devices and promoted the simulation of various synaptic functions. In this review, these devices are discussed by categorizing them into electrically stimulated, optically stimulated, and photoelectric synergetic synaptic devices based on stimulation of electrical and optical signals. The working mechanisms of the devices are analyzed in detail. This is followed by a discussion of the progress in mimicking synaptic functions. In addition, existing application scenarios of various synaptic devices are outlined. Furthermore, the performances and future development of the synaptic devices that could be significant for building efficient neuromorphic systems are prospected.
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Affiliation(s)
- Wen Huang
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China.
| | - Xuwen Xia
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China
| | - Chen Zhu
- College of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China
| | - Parker Steichen
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195-2120, USA
| | - Weidong Quan
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China
| | - Weiwei Mao
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China
| | - Jianping Yang
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China
| | - Liang Chu
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China.
| | - Xing'ao Li
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, 210023, People's Republic of China.
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, People's Republic of China.
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40
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Yu H, Wei H, Gong J, Han H, Ma M, Wang Y, Xu W. Evolution of Bio-Inspired Artificial Synapses: Materials, Structures, and Mechanisms. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2000041. [PMID: 32452636 DOI: 10.1002/smll.202000041] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2020] [Revised: 04/19/2020] [Indexed: 05/08/2023]
Abstract
Artificial synapses (ASs) are electronic devices emulating important functions of biological synapses, which are essential building blocks of artificial neuromorphic networks for brain-inspired computing. A human brain consists of several quadrillion synapses for information storage and processing, and massively parallel computation. Neuromorphic systems require ASs to mimic biological synaptic functions, such as paired-pulse facilitation, short-term potentiation, long-term potentiation, spatiotemporally-correlated signal processing, and spike-timing-dependent plasticity, etc. Feature size and energy consumption of ASs need to be minimized for high-density energy-efficient integration. This work reviews recent progress on ASs. First, synaptic plasticity and functional emulation are introduced, and then synaptic electronic devices for neuromorphic computing systems are discussed. Recent advances in flexible artificial synapses for artificial sensory nerves are also briefly introduced. Finally, challenges and opportunities in the field are discussed.
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Affiliation(s)
- Haiyang Yu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Huanhuan Wei
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Jiangdong Gong
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Hong Han
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Mingxue Ma
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Yongfei Wang
- School of Materials and Metallurgy, University of Science and Technology Liaoning, Anshan, Liaoning, 114051, China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
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41
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Feng X, Li S, Wong SL, Tong S, Chen L, Zhang P, Wang L, Fong X, Chi D, Ang KW. Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing. ACS NANO 2021; 15:1764-1774. [PMID: 33443417 DOI: 10.1021/acsnano.0c09441] [Citation(s) in RCA: 34] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-terminal resistive switching devices are commonly plagued with longstanding scientific issues including interdevice variability and sneak current that lead to computational errors and high-power consumption. This necessitates the integration of a separate selector in a one-transistor-one-RRAM (1T-1R) configuration to mitigate crosstalk issue, which compromises circuit footprint. Here, we demonstrate a multi-terminal memtransistor crossbar array with increased parallelism in programming via independent gate control, which allows in situ computation at a dense cell size of 3-4.5 F2 and a minimal sneak current of 0.1 nA. Moreover, a low switching energy of 20 fJ/bit is achieved at a voltage of merely 0.42 V. The architecture is capable of performing multiply-and-accumulate operation, a core computing task for pattern classification. A high MNIST recognition accuracy of 96.87% is simulated owing to the linear synaptic plasticity. Such computing paradigm is deemed revolutionary toward enabling data-centric applications in artificial intelligence and Internet-of-things.
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Affiliation(s)
- Xuewei Feng
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore
| | - Swee Liang Wong
- Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, 138634, Singapore
| | - Shiwun Tong
- Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, 138634, Singapore
| | - Li Chen
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore
| | - Panpan Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore
| | - Lingfei Wang
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore
| | - Xuanyao Fong
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore
| | - Dongzhi Chi
- Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, 138634, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore
- Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, 138634, Singapore
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42
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Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing. Nat Commun 2021; 12:53. [PMID: 33397907 PMCID: PMC7782550 DOI: 10.1038/s41467-020-20257-2] [Citation(s) in RCA: 76] [Impact Index Per Article: 25.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2020] [Accepted: 11/10/2020] [Indexed: 11/08/2022] Open
Abstract
With the advent of the big data era, applications are more data-centric and energy efficiency issues caused by frequent data interactions, due to the physical separation of memory and computing, will become increasingly severe. Emerging technologies have been proposed to perform analog computing with memory to address the dilemma. Ferroelectric memory has become a promising technology due to field-driven fast switching and non-destructive readout, but endurance and miniaturization are limited. Here, we demonstrate the α-In2Se3 ferroelectric semiconductor channel device that integrates non-volatile memory and neural computation functions. Remarkable performance includes ultra-fast write speed of 40 ns, improved endurance through the internal electric field, flexible adjustment of neural plasticity, ultra-low energy consumption of 234/40 fJ per event for excitation/inhibition, and thermally modulated 94.74% high-precision iris recognition classification simulation. This prototypical demonstration lays the foundation for an integrated memory computing system with high density and energy efficiency.
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43
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Dragoman M, Dinescu A, Dragoman D, Palade C, Moldovan A, Dinescu M, Teodorescu VS, Ciurea ML. Wafer-scale graphene-ferroelectric HfO 2/Ge-HfO 2/HfO 2 transistors acting as three-terminal memristors. NANOTECHNOLOGY 2020; 31:495207. [PMID: 32946424 DOI: 10.1088/1361-6528/abb2bf] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this paper we report a set of experiments at the wafer level regarding field-effect transistors with a graphene monolayer channel transferred on the ferroelectric HfO2/Ge-HfO2/HfO2 three-layer structure. This kind of transistor has a switching ratio of 103 between on and off states due to the bandgap in graphene induced by the ferroelectric structure. Both top and back gates effectively control the carriers' charge flow in graphene. The transistor acts as a three-terminal memristor, termed a memtransistor, with applications in neuromorphic computation.
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Affiliation(s)
- M Dragoman
- National Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126 A, Voluntari 077190, Romania
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44
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Klingner N, Hlawacek G, Mazarov P, Pilz W, Meyer F, Bischoff L. Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2020; 11:1742-1749. [PMID: 33282621 PMCID: PMC7684691 DOI: 10.3762/bjnano.11.156] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2020] [Accepted: 10/28/2020] [Indexed: 06/12/2023]
Abstract
While the application of focused ion beam (FIB) techniques has become a well-established technique in research and development for patterning and prototyping on the nanometer scale, there is still a large underused potential with respect to the usage of ion species other than gallium. Light ions in the range of m = 1-28 u (hydrogen to silicon) are of increasing interest due to the available high beam resolution in the nanometer range and their special chemical and physical behavior in the substrate. In this work, helium and neon ion beams from a helium ion microscope are compared with ion beams such as lithium, beryllium, boron, and silicon, obtained from a mass-separated FIB using a liquid metal alloy ion source (LMAIS) with respect to the imaging and milling resolution, as well as the current stability. Simulations were carried out to investigate whether the experimentally smallest ion-milled trenches are limited by the size of the collision cascade. While He+ offers, experimentally and in simulations, the smallest minimum trench width, light ion species such as Li+ or Be+ from a LMAIS offer higher milling rates and ion currents while outperforming the milling resolution of Ne+ from a gas field ion source. The comparison allows one to select the best possible ion species for the specific demands in terms of resolution, beam current, and volume to be drilled.
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Affiliation(s)
- Nico Klingner
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Gregor Hlawacek
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Paul Mazarov
- Raith GmbH, Konrad-Adenauer-Allee 8, 44263 Dortmund, Germany
| | - Wolfgang Pilz
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- Raith GmbH, Konrad-Adenauer-Allee 8, 44263 Dortmund, Germany
| | - Fabian Meyer
- Raith GmbH, Konrad-Adenauer-Allee 8, 44263 Dortmund, Germany
| | - Lothar Bischoff
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
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Abstract
Two-dimensional (2D) layered materials and their heterostructures have recently been recognized as promising building blocks for futuristic brain-like neuromorphic computing devices. They exhibit unique properties such as near-atomic thickness, dangling-bond-free surfaces, high mechanical robustness, and electrical/optical tunability. Such attributes unattainable with traditional electronic materials are particularly promising for high-performance artificial neurons and synapses, enabling energy-efficient operation, high integration density, and excellent scalability. In this review, diverse 2D materials explored for neuromorphic applications, including graphene, transition metal dichalcogenides, hexagonal boron nitride, and black phosphorous, are comprehensively overviewed. Their promise for neuromorphic applications are fully discussed in terms of material property suitability and device operation principles. Furthermore, up-to-date demonstrations of neuromorphic devices based on 2D materials or their heterostructures are presented. Lastly, the challenges associated with the successful implementation of 2D materials into large-scale devices and their material quality control will be outlined along with the future prospect of these emergent materials.
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46
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Jadwiszczak J, Maguire P, Cullen CP, Duesberg GS, Zhang H. Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS 2 field-effect transistors. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2020; 11:1329-1335. [PMID: 32953377 PMCID: PMC7476591 DOI: 10.3762/bjnano.11.117] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2020] [Accepted: 08/19/2020] [Indexed: 05/31/2023]
Abstract
Helium ion irradiation is a known method of tuning the electrical conductivity and charge carrier mobility of novel two-dimensional semiconductors. Here, we report a systematic study of the electrical performance of chemically synthesized monolayer molybdenum disulfide (MoS2) field-effect transistors irradiated with a focused helium ion beam as a function of increasing areal irradiation coverage. We determine an optimal coverage range of approx. 10%, which allows for the improvement of both the carrier mobility in the transistor channel and the electrical conductance of the MoS2, due to doping with ion beam-created sulfur vacancies. Larger areal irradiations introduce a higher concentration of scattering centers, hampering the electrical performance of the device. In addition, we find that irradiating the electrode-channel interface has a deleterious impact on charge transport when contrasted with irradiations confined only to the transistor channel.
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Affiliation(s)
| | - Pierce Maguire
- School of Physics, Trinity College Dublin, Dublin 2, Ireland
| | - Conor P Cullen
- School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - Georg S Duesberg
- School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
- State Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany
| | - Hongzhou Zhang
- School of Physics, Trinity College Dublin, Dublin 2, Ireland
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Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors. NANOMATERIALS 2020; 10:nano10071404. [PMID: 32707647 PMCID: PMC7408462 DOI: 10.3390/nano10071404] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/30/2020] [Revised: 07/14/2020] [Accepted: 07/16/2020] [Indexed: 11/16/2022]
Abstract
The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO2-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm.
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48
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Sangwan VK, Hersam MC. Neuromorphic nanoelectronic materials. NATURE NANOTECHNOLOGY 2020; 15:517-528. [PMID: 32123381 DOI: 10.1038/s41565-020-0647-z] [Citation(s) in RCA: 187] [Impact Index Per Article: 46.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2019] [Accepted: 01/23/2020] [Indexed: 05/10/2023]
Abstract
Memristive and nanoionic devices have recently emerged as leading candidates for neuromorphic computing architectures. While top-down fabrication based on conventional bulk materials has enabled many early neuromorphic devices and circuits, bottom-up approaches based on low-dimensional nanomaterials have shown novel device functionality that often better mimics a biological neuron. In addition, the chemical, structural and compositional tunability of low-dimensional nanomaterials coupled with the permutational flexibility enabled by van der Waals heterostructures offers significant opportunities for artificial neural networks. In this Review, we present a critical survey of emerging neuromorphic devices and architectures enabled by quantum dots, metal nanoparticles, polymers, nanotubes, nanowires, two-dimensional layered materials and van der Waals heterojunctions with a particular emphasis on bio-inspired device responses that are uniquely enabled by low-dimensional topology, quantum confinement and interfaces. We also provide a forward-looking perspective on the opportunities and challenges of neuromorphic nanoelectronic materials in comparison with more mature technologies based on traditional bulk electronic materials.
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Affiliation(s)
- Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA.
- Department of Chemistry, Northwestern University, Evanston, IL, USA.
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA.
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Liu C, Chen H, Wang S, Liu Q, Jiang YG, Zhang DW, Liu M, Zhou P. Two-dimensional materials for next-generation computing technologies. NATURE NANOTECHNOLOGY 2020; 15:545-557. [PMID: 32647168 DOI: 10.1038/s41565-020-0724-3] [Citation(s) in RCA: 233] [Impact Index Per Article: 58.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2020] [Accepted: 06/02/2020] [Indexed: 05/22/2023]
Abstract
Rapid digital technology advancement has resulted in a tremendous increase in computing tasks imposing stringent energy efficiency and area efficiency requirements on next-generation computing. To meet the growing data-driven demand, in-memory computing and transistor-based computing have emerged as potent technologies for the implementation of matrix and logic computing. However, to fulfil the future computing requirements new materials are urgently needed to complement the existing Si complementary metal-oxide-semiconductor technology and new technologies must be developed to enable further diversification of electronics and their applications. The abundance and rich variety of electronic properties of two-dimensional materials have endowed them with the potential to enhance computing energy efficiency while enabling continued device downscaling to a feature size below 5 nm. In this Review, from the perspective of matrix and logic computing, we discuss the opportunities, progress and challenges of integrating two-dimensional materials with in-memory computing and transistor-based computing technologies.
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Affiliation(s)
- Chunsen Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
- School of Computer Science, Fudan University, Shanghai, China
| | - Huawei Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Shuiyuan Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Qi Liu
- Frontier Institute of Chip and System, Fudan University, Shanghai, China
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Yu-Gang Jiang
- School of Computer Science, Fudan University, Shanghai, China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Ming Liu
- Frontier Institute of Chip and System, Fudan University, Shanghai, China
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China.
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