Role of Polymorphism and Thin-Film Morphology in Organic Semiconductors Processed by Solution Shearing

Solution Processed Bilayer Metal Halide White Light Emitting Diodes

Metal halide perovskites and perovskite-related organic metal halide hybrids (OMHHs) have recently emerged as a new class of luminescent materials for light emitting diodes (LEDs), owing to their unique and remarkable properties, including near-unity photoluminescence quantum efficiencies, highly tunable emission colors, and low temperature solution processing. While substantial progress has been made in developing monochromatic LEDs with electroluminescence across blue, green, red, and near-infrared regions, achieving highly efficient and stable white electroluminescence from a single LED remains a challenging and under-explored area. Here, a facile approach to generating white electroluminescence is reported by combining narrow sky-blue emission from metal halide perovskites and broadband orange/red emission from zero-dimensional (0D) OMHHs. For the proof of concept, utilizing TPPcarz+ passivated two-dimensional (2D) CsPbBr3 nanoplatelets (NPLs) as sky blue emitter and 0D TPPcarzSbBr4 as orange/red emitter (TPPcarz+ = triphenyl (9-phenyl-9H-carbazol-3-yl) phosphonium), white LEDs (WLEDs) with a solution processed bilayer structure have been fabricated to exhibit a peak external quantum efficiency (EQE) of 4.8% and luminance of 1507 cd m-2 at the Commission Internationale de L'Eclairage (CIE) coordinate of (0.32, 0.35). This work opens a new pathway for creating highly efficient and stable WLEDs using metal halide perovskites and related materials.

On the importance of crystal structures for organic thin film transistors

Historically, knowledge of the molecular packing within the crystal structures of organic semiconductors has been instrumental in understanding their solid-state electronic properties. Nowadays, crystal structures are thus becoming increasingly important for enabling engineering properties, understanding polymorphism in bulk and in thin films, exploring dynamics and elucidating phase-transition mechanisms. This review article introduces the most salient and recent results of the field.

Polymorph Screening of Core-Chlorinated Naphthalene Diimides with Different Fluoroalkyl Side-Chain Lengths

In this work, naphthalenediimide (NDI) derivatives are widely studied for their semiconducting properties and the influence of the side-chain length on the crystal packing is reported, along with the thermal properties of three core-chlorinated NDIs with different fluoroalkyl side-chain lengths (CF3-NDI, C3F7-NDI and C4F9-NDI). The introduction of fluorinated substituents at the imide nitrogen and addition of strong electron-withdrawing groups at the NDI core are used to improve the NDI derivatives air stability. The new compound, CF3-NDI, was deeply analyzed and compared to the well-known C3F7-NDI and C4F9-NDI, leading to the discovery and solution of two different crystal phases, form α and solvate form, and a solid solution of CF3-NDI and CF3-NDI-OH, formed by the decomposition in DMSO.

Quantitative Analysis of Photochemical Reactions in Pentacene Precursor Films

On-surface reactions are rapidly gaining attention as a chemical technique for synthesizing organic functional materials, such as graphene nanoribbons and molecular semiconductors. Quantitative analysis of such reactions is essential for fabricating high-quality film structures, but until our recent work using p-polarized multiple-angle incidence resolution spectrometry (pMAIRS), no analytical technique is available to quantify the reaction rate. In the present study, the pMAIRS technique is employed to analyze the photochemical reaction from 6,13-dihydro-6,13-ethanopentacene-15,16-dione to pentacene in thin films. The spectral analysis on a pMAIRS principle readily reveals the photoconversion rate accurately without other complicated calculations. Thus, this study underlines that the pMAIRS technique is a powerful tool for quantitative analysis of on-surface reactions, as well as molecular orientation.

Polymorph screening at surfaces of a benzothienobenzothiophene derivative: discovering new solvate forms

The discovery of new polymorphs opens up unique applications for molecular materials since their physical properties are predominantly influenced by the crystal structure type. The deposition of molecules at surfaces offers great potential in the variation of the crystallization conditions, thereby allowing access to unknown polymorphs. With our surface crystallization approach, four new phases are found for an oligoethylene glycol-benzothienobenzothiophene molecule, and none of these phases could be identified via classical polymorph screening. The corresponding crystal lattices of three of the new phases were obtained via X-ray diffraction (XRD). Based on the volumetric considerations together with X-ray fluorescence and Raman spectroscopy data, the phases are identified as solvates containing one, two or three solvent molecules per molecule. The strong interaction of dichloromethane with the oligoethylene glycol side chains of the molecules may be responsible for the formation of the solvates. Temperature-dependent XRD reveals the low thermal stability of the new phases, contrary to the thermodynamically stable bulk form. Nevertheless, the four solvates are stable under ambient conditions for at least two years. This work illustrates that defined crystallization at surfaces enables access to multiple solvates of a given material through precise and controlled variations in the crystallization kinetics.

Directional Crystallization of Conjugated Molecules during Coating Processes

The coating of organic molecules from the solution phase can result in directional crystal growth under certain conditions, even on a smooth isotropic surface and without the need of any kind of graphoexpitaxial preparation of the substrate. Based on reviewing the results from a variety of coating techniques and coating parameters, we identified that it is crucial for the coating speed to match the growth speed of the fastest growing crystal plane to achieve a high degree of directional crystallization.

Meniscus-Guided Deposition of Organic Semiconductor Thin Films: Materials, Mechanism, and Application in Organic Field-Effect Transistors

Solution-processable organic semiconductors are one of the promising materials for the next generation of organic electronic products, which call for high-performance materials and mature processing technologies. Among many solution processing methods, meniscus-guided coating (MGC) techniques have the advantages of large-area, low-cost, adjustable film aggregation, and good compatibility with the roll-to-roll process, showing good research results in the preparation of high-performance organic field-effect transistors. In this review, the types of MGC techniques are first listed and the relevant mechanisms (wetting mechanism, fluid mechanism, and deposition mechanism) are introduced. The MGC processes are focused and the effect of the key coating parameters on the thin film morphology and performance with examples is illustrated. Then, the performance of transistors based on small molecule semiconductors and polymer semiconductor thin films prepared by various MGC techniques is summarized. In the third section, various recent thin film morphology control strategies combined with the MGCs are introduced. Finally, the advanced progress of large-area transistor arrays and the challenges for roll-to-roll processes are presented using MGCs. Nowadays, the application of MGCs is still in the exploration stage, its mechanism is still unclear, and the precise control of film deposition still needs experience accumulation.

Efficient Red Light Emitting Diodes Based on a Zero-Dimensional Organic Antimony Halide Hybrid

Zero-dimensional (0D) organic metal halide hybrids (OMHHs) have recently emerged as a new class of light emitting materials with exceptional color tunability. While near-unity photoluminescence quantum efficiencies (PLQEs) are routinely obtained for a large number of 0D OMHHs, it remains challenging to apply them as emitter for electrically driven light emitting diodes (LEDs), largely due to the low conductivity of wide bandgap organic cations. Here, the development of a new OMHH, triphenyl(9-phenyl-9H-carbazol-3-yl) phosphonium antimony bromide (TPPcarzSbBr₄ ), as emitter for efficient LEDs, which consists of semiconducting organic cations (TPPcarz⁺ ) and light emitting antimony bromide anions (Sb₂ Br₈ ^2- ), is reported. By replacing one of the phenyl groups in a well-known tetraphenylphosphonium cation (TPP⁺ ) with an electroactive phenylcarbazole group, a semiconducting TPPcarz⁺ cation is developed for the preparation of red emitting 0D TPPcarzSbBr₄ single crystals with a high PLQE of 93.8%. With solution processed TPPcarzSbBr₄ thin films (PLQE of 86.1%) as light emitting layer, red LEDs are fabricated to exhibit an external quantum efficiency (EQE) of 5.12%, a peak luminance of 5957 cd m^-2 , and a current efficiency of 14.2 cd A^-1 , which are the best values reported to date for electroluminescence devices based on 0D OMHHs.

Inverse Design of Tetracene Polymorphs with Enhanced Singlet Fission Performance by Property-Based Genetic Algorithm Optimization

The efficiency of solar cells may be improved by using singlet fission (SF), in which one singlet exciton splits into two triplet excitons. SF occurs in molecular crystals. A molecule may crystallize in more than one form, a phenomenon known as polymorphism. Crystal structure may affect SF performance. In the common form of tetracene, SF is experimentally known to be slightly endoergic. A second, metastable polymorph of tetracene has been found to exhibit better SF performance. Here, we conduct inverse design of the crystal packing of tetracene using a genetic algorithm (GA) with a fitness function tailored to simultaneously optimize the SF rate and the lattice energy. The property-based GA successfully generates more structures predicted to have higher SF rates and provides insight into packing motifs associated with improved SF performance. We find a putative polymorph predicted to have superior SF performance to the two forms of tetracene, whose structures have been determined experimentally. The putative structure has a lattice energy within 1.5 kJ/mol of the most stable common form of tetracene.

High throughput processing of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) organic semiconductors

The deposition of organic semiconductors (OSCs) using solution shearing deposition techniques is highly appealing for device implementation. However, when using high deposition speeds, it is necessary to use very concentrated OSC solutions. The OSCs based on the family of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) have been shown to be excellent OSCs due to their high mobility and stability. However, their limited solubility hinders the processing of these materials at high speed. Here, we report the conditions to process alkylated DNTT and the S-shaped π-core derivative S-DNTT by bar-assisted meniscus shearing (BAMS) at high speed (i.e., 10 mm s^-1). In all the cases, homogeneous thin films were successfully prepared, although we found that the gain in solubility achieved with the S-DNTT derivative strongly facilitated solution processing, achieving a field-effect mobility of 2.1 cm² V^-1 s^-1, which is two orders of magnitude higher than the mobility found for the less soluble linear derivatives.

Recent Advances in Realizing Highly Aligned Organic Semiconductors by Solution-Processing Approaches

Solution-processing approaches are widely used for controlling the aggregation structure of organic semiconductors because they are fast, efficient, and have strong practicability. Effective regulation of the aggregation structure of molecules to achieve highly ordered molecular stacking is key to realizing effective carrier transport and high-performance devices. Numerous studies have achieved highly aligned organic semiconductors using different solution-processing approaches. This article provides a detailed review of the prevalent solution-processing technologies and emerging methods developed over the past few years for the alignment of organic semiconducting materials. These technologies and methods are classified according to the processing principle. This review focuses on the principles of different experimental techniques, improvements upon the conventional methods, and state-of-the-art performance of resulting devices. In addition, a brief discussion of the characteristics and development prospects of various methods is presented.

Template and Temperature-Controlled Polymorph Formation in Squaraine Thin Films

Controlling the polymorph formation in organic semiconductor thin films by the choice of processing parameters is a key factor for targeted device performance. Small molecular semiconductors such as the prototypical anilino squaraine compound with branched butyl chains as terminal functionalization (SQIB) allow both solution and vapor phase deposition methods. SQIB has been considered for various photovoltaic applications mainly as amorphous isotropic thin films due to its broad absorption within the visible to deep-red spectral range. The two known crystalline polymorphs adopting a monoclinic and orthorhombic crystal phase show characteristic Frenkel excitonic spectral signatures of overall H-type and J-type aggregates, respectively, with additional pronounced Davydov splitting. This gives a recognizable polarized optical response of crystalline thin films suitable for identification of the polymorphs. Both phases emerge with a strongly preferred out-of-plane and rather random in-plane orientation in spin-casted thin films depending on subsequent thermal annealing. By contrast, upon vapor deposition on dielectric and conductive substrates, such as silicon dioxide, potassium chloride, graphene, and gold, the polymorph expression depends basically on the choice of growth substrate. The same pronounced out-of-plane orientation is adopted in all crystalline cases, but with a surface templated in-plane alignment in case of crystalline substrates. Strikingly, the amorphous isotropic thin films obtained by vapor deposition cannot be crystallized by thermal postannealing, which is a key feature for the spin-casted thin films, here monitored by polarized in situ microscopy. Combining X-ray diffraction, atomic force microscopy, ellipsometry, and polarized spectro-microscopy, we identify the processing-dependent evolution of the crystal phases, correlating morphology and molecular orientations within the textured SQIB films.

On the crystal forms of NDI-C6: annealing and deposition procedures to access elusive polymorphs

NDI-C6 has been extensively studied for its semiconducting properties and its processability. It is known to have several polymorphs and a high thermal expansion. Here we report the full thermal characterization of NDI-C6 by combining differential scanning calorimetry, variable temperature X-ray powder diffraction, and hot stage microscopy, which revealed two different thermal behaviours depending on the annealing process. The ranking of stability was determined by the temperature and energy involved in the transitions: Form α is stable from RT up to 175 °C, Form β is metastable at all temperatures, Form γ is stable in the range 175-178 °C, and Form δ in the range 178-207 °C followed by the melt at 207 °C. We determined the crystal structure of Form γ at 54 °C from powder. The analysis of the thermal expansion principal axis shows that Form α and Form γ possess negative thermal expansion (X1) and massive positive thermal expansion (X3) which are correlated to the thermal behaviour observed. We were able to isolate pure Form α, Form β, and Form γ in thin films and we found a new metastable form, called Form ε, by spin coating deposition of a toluene solution of NDI-C6 on Si/SiO₂ substrates.

Mobility anisotropy in the herringbone structure of asymmetric Ph-BTBT-10 in solution sheared thin film transistors

Thin films of the organic semiconductor Ph-BTBT-10 and blends of this material with polystyrene have been deposited by a solution shearing technique at low (1 mm s^-1) and high (10 mm s^-1) coating velocities and implemented in organic field-effect transistors. Combined X-ray diffraction and electrical characterisation studies prove that the films coated at low speed are significantly anisotropic. The highest mobility is found along the coating direction, which corresponds to the crystallographic a-axis. In contrast, at high coating speed the films are crystallographically less ordered but with better thin film homogeneity and exhibit isotropic electrical characteristics. Best mobilities are found in films prepared at high coating speeds with the blended semiconductor. This work demonstrates the interplay between the crystal packing and thin film morphology and uniformity and their impact on the device performance.

Water-Surface Drag Coating: A New Route Toward High-Quality Conjugated Small-Molecule Thin Films with Enhanced Charge Transport Properties

Electronic properties of organic semiconductor (OSC) thin films are largely determined by their morphologies and crystallinities. However, solution-processed conjugated small-molecule OSC thin films usually exhibit abundant grain boundaries and impure grain orientations because of complex fluid dynamics during solution coating. Here, a novel methodology, water-surface drag coating, is demonstrated to fabricate high-quality OSC thin films with greatly enhanced charge transport properties. This method utilizes the water surface to alter the evaporation dynamics of solution to enlarge the grain size, and a unique drag-coating process to achieve the unidirectional growth of organic crystals. Using 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (Dif-TES-ADT) as an example, thin films with millimeter-sized single-crystal domains and pure crystallographic orientations are achieved, revealing a significant enhancement (4.7 times) of carrier mobility. More importantly, the resulting film can be directly transferred onto any desired flexible substrates, and flexible transistors based on the Dif-TES-ADT thin films show a mobility as high as 16.1 cm² V^-1 s^-1 , which represents the highest mobility value for the flexible transistors reported thus far. The method is general for the growth of various high-quality OSC thin films, thus opening up opportunities for high-performance organic flexible electronics.

Persistent Organic Room-Temperature Phosphorescence in Cyclohexane-trans-1,2-Bisphthalimide Derivatives: The Dramatic Impact of Heterochiral vs Homochiral interactions

Persistent metal-free room-temperature phosphorescence (RTP) materials attract significant interest owing to the production of long-lived triplet excited states. Although several organic designs show RTP, the impact of intermolecular interactions on the triplet excitons stabilization and migrations remains hardly understood because obtaining different ordered intermolecular interactions while conserving identical molecular electronic properties is very challenging. We propose here a new strategy to circumvent this problem by taking advantage of the distinct molecular packing that can be found between enantiomer and racemic forms of a chiral molecule. Structural, photophysical, and chiroptical investigations of chiral cyclohexane bisphthalimide derivatives showed that heterochiral and homochiral dimer interactions play a crucial role on the triplet excited state stabilization, resulting in higher RTP efficiency for enantiopure systems than for racemic one. This study paves the way to the use of molecular chirality to rationalize supramolecular properties arising from subtle intermolecular interactions.

Representing the Molecular Signatures of Disordered Molecular Semiconductors in Size-Extendable Models of Exciton Dynamics

This manuscript presents an approach to developing size-extendable phenomenological site-based models for simulating exciton dynamics in disordered organic molecular semiconducting materials. This approach extends an existing methodology that assigns the parameters of the time-dependent Frenkel exciton model by applying fragmentation-based electronic structure calculations to the output of classical molecular dynamics simulations. This methodology is inherently limited by the system size of the all-atom simulation, which is well below the performance capability of site-based models. Here, we demonstrate that this system size limitation can be effectively overcome by defining a size-extendable surrogate model based on the correlated parameter statistics derived from existing fragmentation-based methods. We demonstrate our approach on a monolayer film of sexithiophene molecules, first validating the accuracy of the surrogate system in reproducing exciton dynamical properties of a 150 molecule system, then extending it to systems of 2500 molecules. With this extended system, we explore the sensitivity of exciton dynamics to variations in the temperature as well as the amplitude and spatial correlations of energetic disorder. We conclude that exciton dynamics can be significantly enhanced in morphologies with spatially correlated molecular configurations but only if the overall distribution of site energies is sufficiently broad.

A Windmill-Shaped Molecule with Anthryl Blades to Form Smooth Hole-Transport Layers via a Photoprecursor Approach

Preparation of high-performance organic semiconductor devices requires precise control over the active-layer structure. To this end, we are working on the controlled deposition of small-molecule semiconductors through a photoprecursor approach wherein a soluble precursor compound is processed into a thin-film form and then converted to a target semiconductor by light irradiation. This approach can be applied to layer-by-layer solution deposition, enabling the preparation of p-i-n-type photovoltaic active layers by wet processing. However, molecular design principles are yet to be established toward obtaining desirable thin-film morphology via this unconventional method. Herein, we evaluate a new windmill-shaped molecule with anthryl blades, 1,3,5-tris(5-(anthracen-2-yl)thiophen-2-yl)benzene, which is designed to deposit via the photoprecursor approach for use as the p-sublayer in p-i-n-type organic photovoltaic devices (OPVs). The new compound is superior to the corresponding precedent p-sublayer materials in terms of forming smooth and homogeneous films, thereby leading to improved performance of p-i-n OPVs. Overall, this work demonstrates the effectiveness of the windmill-type architecture in preparing high-quality semiconducting thin films through the photoprecursor approach.

Morphology and mobility as tools to control and unprecedentedly enhance X-ray sensitivity in organic thin-films

Organic semiconductor materials exhibit a great potential for the realization of large-area solution-processed devices able to directly detect high-energy radiation. However, only few works investigated on the mechanism of ionizing radiation detection in this class of materials, so far. In this work we investigate the physical processes behind X-ray photoconversion employing bis-(triisopropylsilylethynyl)-pentacene thin-films deposited by bar-assisted meniscus shearing. The thin film coating speed and the use of bis-(triisopropylsilylethynyl)-pentacene:polystyrene blends are explored as tools to control and enhance the detection capability of the devices, by tuning the thin-film morphology and the carrier mobility. The so-obtained detectors reach a record sensitivity of 1.3 · 10⁴ µC/Gy·cm², the highest value reported for organic-based direct X-ray detectors and a very low minimum detectable dose rate of 35 µGy/s. Thus, the employment of organic large-area direct detectors for X-ray radiation in real-life applications can be foreseen.

Though organic semiconductors are attractive for high performance X-ray detection systems, the detection mechanism in organic thin films is not well understood. Here, the authors report the role of morphology and carrier mobility on X-ray sensitivity in detectors with unprecedented performance.

n-Type Thin-Film Transistors Based on Diketopyrrolopyrrole Derivatives: Role of Siloxane Side Chains and Electron-Withdrawing Substituents

The physical properties, packing, morphology, and semiconducting performance of a planar π-conjugated system can be effectively modified by introducing side chains and substituent groups, both of which can be complementary to the π framework in changing the intermolecular association, frontier molecular orbital energy, optical band gap, and others. We herein show that installation of end-capped electron-withdrawing groups (EWGs), such as dicyanovinyl (-DCV), 3-ethylrhodanine (-RD), and 2-(3-oxo-indan-1-ylidene)-malononitrile (-INCN), together with siloxane side chains to the backbones of dithienyldiketopyrrolopyrrole (DPPT), such as DPPT-Si-DCV, DPPT-Si-RD, and DPPT-Si-INCN, can greatly improve its solubility, air stability, and film morphology to serve as an n-channel in thin-film transistor fabrication. The EWGs attached to the DPPT core narrowed the optical band gap (E_g^opt) and changed the highest occupied molecular orbital and the lowest unoccupied molecular orbital energies (E_HOMO and E_LUMO), making them suitable for n-channel field-effect transistor (FET) applications. The benefits of introducing siloxane side chains to the DPPT core include enhanced solubility, low crystallization barrier, enantiotropic phase behavior, and much improved FET performance. The DPPT-Si-INCN film displayed low-lying HOMO (-5.82 eV) and LUMO (-4.60 eV) energy levels and an optical band gap as low as 1.22 eV, all of which suggest that this derivative can be quite resistant toward aerial oxidation. Thin films of these derivatives were prepared by the solution-shear method. A comparison of the solution-sheared films indicated that the molecular packing motif of DPPT-Si-INCN film was somehow different from that of DPPT-Si-DCV and DPPT-Si-RD, in which the π-π stacking tended to align orthogonally to the shearing direction. This specific π-π stacking alignment could have an impact on the electron mobility (μ_e) values in transistors based on the solution-sheared films.

Effect of localized UV irradiation on the crystallinity and electrical properties of dip-coated polythiophene thin films

Ensuring high performance in polymer devices requires conjugated polymers with interchain π–π stacking interactions via van der Waals forces, which can induce structural changes in the polymer thin film. Here, we present a systematic study of using simple localized UV irradiation to overcome the low crystallinity and poor charge carrier transport in dip-coated poly(3-hexylthiophene) (P3HT) thin films, which are consequences of the limited selection of solvents compatible with the dip-coating process. UV irradiation for only a few minutes effectively promoted P3HT chain self-assembly and association in the solution state. Brief UV irradiation of a P3HT solution led to well-ordered molecular structures in the resultant P3HT films dip-coated using a low boiling point solvent with rapid solvent evaporation. In addition, the position at which UV light was irradiated on the dip-coating solutions was varied, and the effects of the irradiation position and time on the crystallinity and electrical properties of the resultant P3HT thin films were investigated.

When the top part of the solution was irradiated with UV light, the dip-coated P3HT film showed enhanced crystallinity and electrical properties.

Pen drawing display

As advancements in science and technology, such as the Internet of things, smart home systems, and automobile displays, become increasingly embedded in daily life, there is a growing demand for displays with customized sizes and shapes. This study proposes a pen drawing display technology that can realize a boardless display in any form based on the user's preferences, without the usual restrictions of conventional frame manufacturing techniques. An advantage of the pen drawing method is that the entire complex fabrication process for the display is encapsulated in a pen. The display components, light-emitting layers, and electrodes are formed using felt-tip drawing pens that contain the required solutions and light-emitting materials. The morphology and thickness of each layer is manipulated by adjusting the drawing speed, number of drawing cycles, and substrate temperature. This study is expected to usher in the upcoming era of customized displays that can reflect individual user needs.

On the Role of Contact Resistance and Electrode Modification in Organic Electrochemical Transistors

Contact resistance is renowned for its unfavorable impact on transistor performance. Despite its notoriety, the nature of contact resistance in organic electrochemical transistors (OECTs) remains unclear. Here, by investigating the role of contact resistance in n-type OECTs, the first demonstration of source/drain-electrode surface modification for achieving state-of-the-art n-type OECTs is reported. Specifically, thiol-based self-assembled monolayers (SAMs), 4-methylbenzenethiol (MBT) and pentafluorobenzenethiol (PFBT), are used to investigate contact resistance in n-type accumulation-mode OECTs made from the hydrophilic copolymer P-90, where the deliberate functionalization of the gold source/drain electrodes decreases and increases the energetic mismatch at the electrode/semiconductor interface, respectively. Although MBT treatment is found to increase the transconductance three-fold, contact resistance is not found to be the dominant factor governing OECT performance. Additional morphology and surface energy investigations show that increased performance comes from SAM-enhanced source/drain electrode surface energy, which improves wetting, semiconductor/metal interface quality, and semiconductor morphology at the electrode and channel. Overall, contact resistance in n-type OECTs is investigated, whilst identifying source/drain electrode treatment as a useful device engineering strategy for achieving state of the art n-type OECTs.

Addition of the Lewis Acid Zn(C6 F5 )2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V-1 s-1

Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C₆ F₅ )₃ ] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C₆ F₅ )₃ with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C₆ F₅ )₂ ] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene-benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C₆ F₅ )₂ acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm² V^-1 s^-1 . The work not only highlights Zn(C₆ F₅ )₂ as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors.

Multi-scale modeling of early-stage morphology in solution-processed polycrystalline thin films

A model is introduced for treating early-stage nucleation, growth kinetics, and mesoscale domain structure in submonolayer polycrystalline films prepared by solution-phase processing methods such as spin casting, dip coating, liquid-based printing, and related techniques. The model combines a stochastic treatment of nucleation derived from classical nucleation theory with deterministic computation of the spatiotemporal dynamics of the monomer concentration landscape by numerical solution of the two-dimensional diffusion equation, treating nuclei as monomer sinks. Results are compared to experimental measurements of solution-processed submonolayer tetracene films prepared using a vapor-liquid-solid deposition technique. Excellent agreement is observed with most major kinetic and structural film characteristics, including the existence of distinct induction, nucleation, and growth regimes, the onset time for nucleation, the number of domains formed per unit area, and the micron- to millimeter-scale spacing statistics of those domains. The model also provides a detailed description the dynamically-evolving monomer concentration landscape during film formation as well as quantities derived from it, such as time- and position-dependent domain nucleation and growth rates.

Thermodynamically versus Kinetically Controlled Self-Assembly of a Naphthalenediimide-Thiophene Derivative: From Crystalline, Fluorescent, n-Type Semiconducting 1D Needles to Nanofibers

The control over aggregation pathways is a key requirement for present and future technologies, as it can provide access to a variety of sophisticated structures with unique functional properties. In this work, we demonstrate an unprecedented control over the supramolecular self-assembly of a semiconductive material, based on a naphthalenediimide core functionalized with phenyl-thiophene moieties at the imide termini, by trapping the molecules into different arrangements depending on the crystallization conditions. The control of the solvent evaporation rate enables the growth of highly elaborated hierarchical self-assembled structures: either in an energy-minimum thermodynamic state when the solvent is slowly evaporated forming needle-shaped crystals (polymorph α) or in a local energy-minimum state when the solvent is rapidly evaporated leading to the formation of nanofibers (polymorph β). The exceptional persistence of the kinetically trapped β form allowed the study and comparison of its characteristics with that of the stable α form, revealing the importance of molecular aggregation geometry in functional properties. Intriguingly, we found that compared to the thermodynamically stable α phase, characterized by a J-type aggregation, the β phase exhibits (i) an unusual strong blue shift of the emission from the charge-transfer state responsible for the solid-state luminescent enhancement, (ii) a higher work function with a "rigid shift" of the electronic levels, as shown by Kelvin probe force microscopy and cyclic voltammetry measurements, and (iii) a superior field-effect transistor mobility in agreement with an H-type aggregation as indicated by X-ray analysis and theoretical calculations.

Highly crystalline and uniform conjugated polymer thin films by a water-based biphasic dip-coating technique minimizing the use of halogenated solvents for transistor applications

The commercialization of organic electronics will require minimizing the use of halogenated solvents used to solution-process organic semiconductors, which is a crucial step for large-area coating methods, such as the dip-coating method. Here, we report a novel biphasic dip-coating method which uses a water-based biphasic solution and produces a uniform, smooth, and crystalline conjugated polymer thin film in the presence of a solvent additive. We demonstrated that a solvent additive with a high boiling point and solubility parameter similar to that of the solution affected the solvent evaporation rate and improved the crystallinity of the dip-coated polymer thin film. The method used to add the solvent strongly influenced how the solvent additive diffused into the polymer solution, which affected the resulting film morphology. The crystallinity and morphology of the polymer films were correlated with the electrical characteristics, and the most crystalline film displayed a high hole field effect mobility of 0.0391 cm2 V-1 s-1 when processed from the solvent mixture without post-treatment. Our findings provide a direction for the development of reliable and promising organic thin film transistor technologies.

Guided Formation of Large Crystals of Organic and Perovskite Semiconductors by an Ultrasonicated Dispenser and Their Application as the Active Matrix of Photodetectors

The crystallization of organic or perovskite semiconductors reflects the intermolecular interactions and crucially determines the charge transport in opto-electronic devices. In this report, we demonstrate and investigate the use of an ultrasonicated dispenser to guide the formation of crystals of organic and perovskite semiconductors. The moving speed of the dispenser affects the match between the concentration gradient and evaporation rate near the three-phase contact lines and thus the generation of various crystallization morphologies. The mechanism of crystallization is given by a relationship between the calculated concentration gradient profile and the degree of crystal alignment. Highly ordered, aligned crystals are achieved for both organic bis(triisopropylsilylethynyl)-pentacene and perovskite MAPbI₃ semiconductors. Absorption spectra, Raman scattering spectroscopy analysis, and grazing incidence wide-angle X-ray scattering measurement reveal the strong anisotropy of the crystalline structures. The aligned crystals lead to remarkably enhanced electrical performances in an organic thin-film transistor (OTFT) and perovskite photodetector. As a demonstration, we combine the OTFT with photodetectors to achieve an active matrix of normally off, gate-tunable photodetectors that operate under ambient conditions.