Magnetic-Field-Enhanced H2S Sensitivity of Cu2O/NiO Heterostructure Ordered Nanoarrays

Magnetic Field Assisted Enhanced Sensitivity of Nonferromagnetic Materials Boosting the Carrier Transfer: Mechanistic Studies

The performance of semiconductor sensors is determined by reaction kinetics, conductivity, and electron mobility, which are undoubtedly closely related to the electron motion behavior. Therefore, the effective regulation of electronic states is crucial for improving gas sensing properties. Previous methods of enhancing the gas-sensing performance have induced complex material modifications, and the extent of performance improvement is usually very limited. Further optimization of the gas sensing performance requires continuous efforts to advance new technologies. Toward this issue, a novel magnetic field-induced strategy is adopted to boost the carrier transfer efficiency of nonferromagnetic semiconductors. The gas sensing investigation results manifest that the applied magnetic field can effectively enhance the sensitivity and reduce the baseline resistance. The In2O3 NC-2 (In2O3 nanocubes) with an applied magnetic field have a greatly enhanced response of 161.4 toward 100 ppm formaldehyde, which is 2.5 times higher than that without magnetic field. The enhanced gas sensing properties can be mainly attributed to magnetization of reactive materials, which makes the orientation of electronic magnetic moments consistent, thus greatly contributing to reactivity. This work introduces a practical approach to effectively improve gas sensing performance without further morphology optimization, noble metal catalysis, structural modification, and material cladding. The results of this study provide new insights for designing novel gas sensors to improve the gas sensing performance.

Mesoporous and Encapsulated In2O3/Ti3C2Tx Schottky Heterojunctions for Rapid and ppb-Level NO2 Detection at Room Temperature

Rapid and ultrasensitive detection of toxic gases at room temperature is highly desired in health protection but presents grand challenges in the sensing materials reported so far. Here, we present a gas sensor based on novel zero dimensional (0D)/two dimensional (2D) indium oxide (In2O3)/titanium carbide (Ti3C2Tx) Schottky heterostructures with a high surface area and rich oxygen vacancies for parts per billion (ppb) level nitrogen dioxide (NO2) detection at room temperature. The In2O3/Ti3C2Tx gas sensor exhibits a fast response time (4 s), good response (193.45% to 250 ppb NO2), high selectivity, and excellent cycling stability. The rich surface oxygen vacancies play the role of active sites for the adsorption of NO2 molecules, and the Schottky junctions effectively adjust the charge-transfer behavior through the conduction tunnel in the sensing material. Furthermore, In2O3 nanoparticles almost fully cover the Ti3C2Tx nanosheets which can avoid the oxidation of Ti3C2Tx, thus contributing to the good cycling stability of the sensing materials. This work sheds light on the sensing mechanism of heterojunction nanostructures and provides an efficient pathway to construct high-performance gas sensors through the rational design of active sites.

Ultrasensitive Bio-H2S Gas Sensor Based on Cu2O-MWCNT Heterostructures

Developing a respiratory analysis disease diagnosis platform for the H2S biomarker has great significance for the real-time detection of various diseases. However, achieving highly sensitive and rapid detection of H2S gas at the parts per billion level at low temperatures is one of the most critical challenges for developing portable exhaled gas sensors. Herein, Cu2O-multiwalled carbon nanotube (MWCNT) heterostructures with excellent gas sensitivity to H2S at room temperature and a lower temperature were successfully synthesized by a facile two-dimensional (2D) electrodeposition in situ assembly method. The combination of Cu2O and MWCNTs via the principle of optimal conductance growth not only reduced the initial resistance of the material but also provided an ideal interfacial barrier structure. Compared to the response of the pure Cu2O sensor, that of the Cu2O-MWCNT sensor to 1 ppm of H2S increased nearly 800 times at room temperature, and the response time decreased by more than 500 s. In addition to the excellent sensitivity with detection limits as low as 1 ppb, the Cu2O-MWCNT sensor was extremely selective with low-temperature adaptability. The sensor had a response value of 80.6 to 0.1 ppm of H2S at -10 °C, which is difficult to achieve with sensors based on oxygen adsorption/desorption mechanisms. The sensor was used for the detection of real oral exhaled breath, confirming its feasibility as a real-time disease monitoring sensor. The Cu2O-MWCNT heterostructures maximized the advantages of the individual components and laid the experimental foundation for future applications of highly sensitive portable breath analysis platforms for monitoring H2S.

Cu2O/Co3O4 nanoarrays for rapid quantitative analysis of hydrogen sulfide in blood

2D heterostructure nanoarrays have emerged as a promising sensing material for rapid disease detection applications. In this study, a bio-H2S sensor based on Cu2O/Co3O4 nanoarrays was proposed, the controllable preparation of the nanoarrays being achieved by exploring the experimental parameters of the 2D electrodeposition in situ assembly process. The nanoarrays were designed as a multi-barrier system with strict periodicity and long-range order. Based on the interfacial conductance modulation and vulcanization reaction of Cu2O and Co3O4, the sensor exhibited superior sensitivity, selectivity, and stability to H2S in human blood. In addition, the sensor exhibited a reasonable response to 0.1 μmol L-1 Na2S solution, indicating that it had a low detection limit for practical applications. Moreover, first-principles calculations were performed to study changes in the heterointerface during the sensing process and the mechanism of rapid response of the sensor. This work demonstrated the reliability of Cu2O/Co3O4 nanoarrays applied in portable sensors for the rapid detection of bio-H2S.