CuInSe2 (CIS) thin films prepared from amorphous Cu-In-Se nanoparticle precursors for solar cell application

Environment-friendly copper-based chalcogenide thin film solar cells: status and perspectives

Copper chalcogenides (CuCh) have attracted considerable attention due to their promising potential as environmental-friendly photoactive material for lightweight and flexible thin film solar cells. Further, CuCh can be fabricated from simple to complex chemical compositions and offer a remarkable charge carrier mobility and excellent absorption coefficient with a desirable bandgap (up to ∼1.0 eV). Currently, they have demonstrated maximum power conversion efficiencies of over 23% for single-junction, around 25% and 28% for monolithic 2-Terminal (2T) and mechanically-stacked 4-Terminal (4T) perovskite/CuCh tandem solar cells, respectively. This article presents an overview of CuCh-based materials, from binary- to quaternary-CuCh compounds for single- and multi-junction solar cells. Then, we discuss the development of fabrication methods and the approaches taken to improve the performance of CuCh-based thin film itself, including chemical doping, the development of complement layers, and their potential application in flexible and lightweight devices. Finally, these technologies' stability, scalability, and toxicity aspects are discussed to enhance their current marketability.

Realization of red plasmon shifts by the selective etching of Ag nanorods

The red plasmon shifts is realized through selective deposition of Au atoms and etching of Ag atoms on the Ag nanorods.

Compound Copper Chalcogenide Nanocrystals

This review captures the synthesis, assembly, properties, and applications of copper chalcogenide NCs, which have achieved significant research interest in the last decade due to their compositional and structural versatility. The outstanding functional properties of these materials stems from the relationship between their band structure and defect concentration, including charge carrier concentration and electronic conductivity character, which consequently affects their optoelectronic, optical, and plasmonic properties. This, combined with several metastable crystal phases and stoichiometries and the low energy of formation of defects, makes the reproducible synthesis of these materials, with tunable parameters, remarkable. Further to this, the review captures the progress of the hierarchical assembly of these NCs, which bridges the link between their discrete and collective properties. Their ubiquitous application set has cross-cut energy conversion (photovoltaics, photocatalysis, thermoelectrics), energy storage (lithium-ion batteries, hydrogen generation), emissive materials (plasmonics, LEDs, biolabelling), sensors (electrochemical, biochemical), biomedical devices (magnetic resonance imaging, X-ray computer tomography), and medical therapies (photochemothermal therapies, immunotherapy, radiotherapy, and drug delivery). The confluence of advances in the synthesis, assembly, and application of these NCs in the past decade has the potential to significantly impact society, both economically and environmentally.

Carbon-Impurity Affected Depth Elemental Distribution in Solution-Processed Inorganic Thin Films for Solar Cell Application

A common feature of the inorganic thin films including Cu(In,Ga)(S,Se)2 fabricated by nonvacuum solution-based approaches is the doubled-layered structure, with a top dense inorganic film and a bottom carbon-containing residual layer. Although the latter has been considered to be the main efficiency limiting factor, (as a source of high series resistance), the exact influence of this layer is still not clear, and contradictory views are present. In this study, using a CISe as a model system, we report experimental evidence indicating that the carbon residual layer itself is electrically benign to the device performance. Conversely, carbon was found to play a significant role in determining the depth elemental distribution of final film, in which carbon selectively hinders the diffusion of Cu during selenization, resulting in significantly Cu-deficient top CISe layer while improving the film morphology. This carbon-affected compositional and morphological impact on the top CISe films is a determining factor for the device efficiency, which was supported by the finding that CISe solar cells processed from the precursor film containing intermediate amount of carbon demonstrated high efficiencies of up to 9.15% whereas the performances of the devices prepared from the precursor films with very high and very low carbon were notably poor.

Dye sensitized solar cell with lawsone dye using a ZnO photoanode: experimental and TD-DFT study

A dye sensitized solar cell with lawsone dye and a ZnO photoanode exhibited a 0.68% power conversion efficiency. TD-DFT was used to explore the UV-Vis spectral features of lawsone.

Carbon- and oxygen-free Cu(InGa)(SSe)₂ solar cell with a 4.63% conversion efficiency by electrostatic spray deposition

We have demonstrated the first example of carbon- and oxygen-free Cu(In,Ga)(SSe)2 (CIGSSe) absorber layers prepared by electrospraying a CuInGa (CIG) precursor followed by annealing, sulfurization, and selenization at elevated temperature. X-ray diffraction and scanning electron microscopy showed that the amorphous as-deposited (CIG) precursor film was converted into polycrystalline CIGSSe with a flat-grained morphology after post-treatment. The optimal post-treatment temperature was 300 °C for annealing and 500 °C for both sulfurization and selenization, with a ramp rate of 5 °C/min. The carbon impurities in the precursor film were removed by air annealing, and oxide that was formed during annealing was removed by sulfurization. The fabricated CIGSSe solar cell showed a conversion efficiency of 4.63% for a 0.44 cm(2) area, with Voc = 0.4 V, Jsc = 21 mA/cm(2), and FF = 0.53.

Spray pyrolysis of CuIn(S,Se)2 solar cells with 5.9% efficiency: a method to prevent Mo oxidation in ambient atmosphere

Direct spray pyrolysis to form CuInS2 (CIS) on molybdenum substrate in ambient environment has been a challenge because of the ease of Mo oxidation at low temperatures. MoO2 formation affects the wettability of precursor solution during spray pyrolysis, which degrades the uniformity of CIS film and acts as a resistive layer for carrier transport. In this paper, Mo oxidation was prevented by using excess sulfur in the precursor solution under a gradual heating and spray process. A thin precursor layer was initially deposited as a barrier layer to prevent oxygen adsorption on Mo surface before the temperature was increased further to form polycrystalline CuInS2. The CuIn(S,Se)2 (CISSe) device fabricated from selenization of the spray-pyrolyzed CIS film exhibited a power conversion efficiency (PCE) of 5.9%. The simple spray method proposed here can be used to deposit a variety of Cu-based chalcopyrite precursor to produce high-quality thin film solar cells.

Band gap grading and photovoltaic performance of solution-processed Cu(In,Ga)S2 thin-film solar cells

The photophysical properties of CIGS thin films, prepared by solution-based coating methods, are investigated to understand the correlation between the optical properties and the electrical characteristics of solar cells.

Study on thermal evolution of the CuSe phase in nanoparticle-based absorber layers for solution-processed chalcopyrite photovoltaic devices

Nanoparticle-based, solution-processed chalcopyrite photovoltaic devices have drawn tremendous attraction for the realization of low-cost, large-area solar cell applications. In particular, it has been recently demonstrated that the CuSe phase plays a critical role in allowing the formation of device-quality, nanoparticle-based chalcopyrite absorber layers. For further in-depth study, with the aim of understanding the thermal behavior of the CuSe phase that triggers the vigorous densification reaction, a requisite for high-performance chalcopyrite absorber layers, both multiphase (CuSe-phase including) and single-phase (CuSe-phase free) CISe nanoparticles are investigated from the viewpoint of compositional variation and crystalline structural evolution. In addition, with CuSe-phase including CISe particulate layers, the basic restrictions in thermal treatment necessary for activating effectively the CuSe-phase induced densification reaction are suggested, in conjunction with consideration on the thermal decomposition of organic additives that are inevitably incorporated in nanoparticle-based absorber layers.

Amorphous Cu-In-S nanoparticles as precursors for CuInSe2 thin-film solar cells with a high efficiency

CuInSe2 (CISe) absorber layers for thin-film solar cells were fabricated through the selenization of amorphous Cu-In-S nanoparticles, which were prepared by using a low-temperature colloidal process within one minute without any external heating. Two strategies for obtaining highly dense CISe absorber films were used in this work; the first was the modification of nanoparticle surface through chelate complexation with ethanolamine, and the second strategy utilized the lattice expansion that occurred when S atoms in the precursor particles were replaced with Se during selenization. The synergy of these two strategies allowed formation of highly dense CISe thin films, and devices fabricated using the absorber layer demonstrated efficiencies of up to 7.94% under AM 1.5G illumination without an anti-reflection coating.