Self-aligned formation of sub 1 nm gaps utilizing electromigration during metal deposition

Metal Nanogap Memory: Performances and Switching Mechanism

The nanogap memory (NGM) device, emerging as a promising nonvolatile memory candidate, has attracted increasing attention for its simple structure, nano/atomic scale size, elevated operating speed, and robustness to high temperatures. In this study, nanogap memories based on Pd, Au, and Pt were fabricated by combining nanofabrication with electromigration technology. Subsequent evaluations of the electrical characteristics were conducted under ambient air or vacuum conditions at room temperature. The investigation unveiled persistent challenges associated with metal NGM devices, including (1) prolonged SET operation time in comparison to RESET, (2) the potential generation of error bits when enhancing switching speeds, and (3) susceptibility to degradation during program/erase cycles. While these issues have been encountered by predecessors in NGM device development, the underlying causes have remained elusive. Employing molecular dynamics (MD) simulation, we have, for the first time, unveiled the dynamic processes of NGM devices during both SET and RESET operations. The MD simulation highlights that the adjustment of the tunneling gap spacing in nanogap memory primarily occurs through atomic migration or field evaporation. This dynamic process enables the device to transition between the high-resistance state (HRS) and the low-resistance state (LRS). The identified mechanism provides insight into the origins of the aforementioned challenges. Furthermore, the study proposes an effective method to enhance the endurance of NGM devices based on the elucidated mechanism.

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

Molecular electronics is driven by the dream of expanding Moore's law to the molecular level for next-generation electronics through incorporating individual or ensemble molecules into electronic circuits. For nearly 50 years, numerous efforts have been made to explore the intrinsic properties of molecules and develop diverse fascinating molecular electronic devices with the desired functionalities. The flourishing of molecular electronics is inseparable from the development of various elegant methodologies for creating nanogap electrodes and bridging the nanogap with molecules. This review first focuses on the techniques for making lateral and vertical nanogap electrodes by breaking, narrowing, and fixed modes, and highlights their capabilities, applications, merits, and shortcomings. After summarizing the approaches of growing single molecules or molecular layers on the electrodes, the methods of constructing a complete molecular circuit are comprehensively grouped into three categories: 1) directly bridging one-molecule-electrode component with another electrode, 2) physically bridging two-molecule-electrode components, and 3) chemically bridging two-molecule-electrode components. Finally, the current state of molecular circuit integration and commercialization is discussed and perspectives are provided, hoping to encourage the community to accelerate the realization of fully scalable molecular electronics for a new era of integrated microsystems and applications.

Scalable Fabrication of Metallic Nanogaps at the Sub-10 nm Level

Metallic nanogaps with metal-metal separations of less than 10 nm have many applications in nanoscale photonics and electronics. However, their fabrication remains a considerable challenge, especially for applications that require patterning of nanoscale features over macroscopic length-scales. Here, some of the most promising techniques for nanogap fabrication are evaluated, covering established technologies such as photolithography, electron-beam lithography (EBL), and focused ion beam (FIB) milling, plus a number of newer methods that use novel electrochemical and mechanical means to effect the patterning. The physical principles behind each method are reviewed and their strengths and limitations for nanogap patterning in terms of resolution, fidelity, speed, ease of implementation, versatility, and scalability to large substrate sizes are discussed.

Massively Parallel Arrays of Size-Controlled Metallic Nanogaps with Gap-Widths Down to the Sub-3-nm Level

Metallic nanogaps (MNGs) are fundamental components of nanoscale photonic and electronic devices. However, the lack of reproducible, high-yield fabrication methods with nanometric control over the gap-size has hindered practical applications. A patterning technique based on molecular self-assembly and physical peeling is reported here that allows the gap-width to be tuned from more than 30 nm to less than 3 nm. The ability of the technique to define sub-3-nm gaps between dissimilar metals permits the easy fabrication of molecular rectifiers, in which conductive molecules bridge metals with differing work functions. A method is further described for fabricating massively parallel nanogap arrays containing hundreds of millions of ring-shaped nanogaps, in which nanometric size control is maintained over large patterning areas of up to a square centimeter. The arrays exhibit strong plasmonic resonances under visible light illumination and act as high-performance substrates for surface-enhanced Raman spectroscopy, with high enhancement factors of up to 3 × 10⁸ relative to thin gold films. The methods described here extend the range of metallic nanostructures that can be fabricated over large areas, and are likely to find many applications in molecular electronics, plasmonics, and biosensing.

Digital image analysis for measuring nanogap distance produced by adhesion lithography

A simple digital image analysis for measuring nanogap distance produced by adhesion lithography is proposed. Adhesion lithography produces metal electrodes with sub-15 nm undulated space and μm to mm scale width without using electron beam lithography. Although the process has been rapidly improved in recent years, there has been no generalized procedure to evaluate the nanogap distance. In this study, we propose a procedure to evaluate a nanogap electrode with large width/gap distance ratios (>1000). The procedure is to determine the average distance of nanogap space from the area and the perimeter of the space by the analysis of the grayscale image. This procedure excludes any arbitrariness of the estimation and gives quantitative comparison of nanogap electrodes produced by different processes.

3D zig-zag nanogaps based on nanoskiving for plasmonic nanofocusing

We combine anisotropic wet etching and nanoskiving to create a novel three-dimensional (3D) nanoantenna for plasmonic nanofocusing, vertically aligned zig-zag nanogaps, constituted of nanogaps with defined angles. Instead of conventional lithography, we used the thickness of a self-assembled monolayer (SAM) to define nanogaps with high throughput, and anisotropic etching of Si V-grooves to naturally define ultra-sharp tips. Both nanogaps and sharp tips can synergistically squeeze the electro-magnetic (EM) field and excite 3D nanofocusing, enabling great potential applications in chemical sensing and plasmonic devices. The dependence of the EM field enhancement on structural features is systematically investigated and optimized. We found that the field enhancement and confinement are stronger at the tipped-nanogap compared to what standalone tips or nanogaps produce. The intensity of surface-enhanced Raman spectroscopy (SERS) recorded on the 70.5° tipped-nanogaps is 45 times higher than that recorded with linear nanogaps and 5 times higher than that recorded with tip-only nanowires, which is attributed to the integration of the tip and gap in plasmonic nanostructures. This proposed nanofabrication technique and the resulting structures equipped with a strongly enhanced EM field will promote broad applications for nanophotonics and surface-enhanced spectroscopy.

Sub-5 nm Metal Nanogaps: Physical Properties, Fabrication Methods, and Device Applications

Sub-5 nm metal nanogaps have attracted widespread attention in physics, chemistry, material sciences, and biology due to their physical properties, including great plasmon-enhanced effects in light-matter interactions and charge tunneling, Coulomb blockade, and the Kondo effect under an electrical stimulus. These properties especially meet the needs of many cutting-edge devices, such as sensing, optical, molecular, and electronic devices. However, fabricating sub-5 nm nanogaps is still challenging at the present, and scaled and reliable fabrication, improved addressability, and multifunction integration are desired for further applications in commercial devices. The aim of this work is to provide a comprehensive overview of sub-5 nm nanogaps and to present recent advancements in metal nanogaps, including their physical properties, fabrication methods, and device applications, with the ultimate aim to further inspire scientists and engineers in their research.

Atomic switches of metallic point contacts by plasmonic heating

Electronic switches with nanoscale dimensions satisfy an urgent demand for further device miniaturization. A recent heavily investigated approach for nanoswitches is the use of molecular junctions that employ photochromic molecules that toggle between two distinct isoforms. In contrast to the reports on this approach, we demonstrate that the conductance switch behavior can be realized with only a bare metallic contact without any molecules under light illumination. We demonstrate that the conductance of bare metallic quantum contacts can be reversibly switched over eight orders of magnitude, which substantially exceeds the performance of molecular switches. After the switch process, the gap size between two electrodes can be precisely adjusted with subangstrom accuracy by controlling the light intensity or polarization. Supported by simulations, we reveal a more general and straightforward mechanism for nanoswitching behavior, i.e., atomic switches can be realized by the expansion of nanoelectrodes due to plasmonic heating.

Fabrication of sub-1 nm gap electrodes using metal-mask patterning and conductivity measurements of molecules in nanoscale spaces

Fabrications of sub-1 nm gap Au electrodes using a metal mask for patterning were achieved. Because the procedure does not involve wet processing, the ranges of possible electrode and substrate materials for the electrodes are greatly expanded.

From 1D to 3D: Tunable Sub-10 nm Gaps in Large Area Devices

Tunable sub-10 nm 1D nanogaps are fabricated based on nanoskiving. The electric field in different sized nanogaps is investigated theoretically and experimentally, yielding nonmonotonic dependence and an optimized gap-width (5 nm). 2D nanogap arrays are fabricated to pack denser gaps combining surface patterning techniques. Innovatively, 3D multistory nanogaps are built via a stacking procedure, processing higher integration, and much improved electric field.

Facile Preparation of Ultrasmall Void Metallic Nanogap from Self-Assembled Gold-Silica Core-Shell Nanoparticles Monolayer via Kinetic Control

A facile preparation of ultrasmall 1-2 nm void metallic nanogaps on various solid substrates is proposed by utilizing the self-assembly of a uniform gold-silica core-shell nanoparticle monolayer at interfaces and chemical etching. The ultrasmall void metallic nanogap shows key advantages such as a strong near-field enhancement and free diffusion of analytes to the gap, which are useful in molecular sensing and monitoring.

Single-molecule electronics: from chemical design to functional devices

The use of single molecules in electronics represents the next limit of miniaturisation of electronic devices, which would enable to continue the trend of aggressive downscaling of silicon-based electronic devices.