Work function modulation and thermal stability of reduced graphene oxide gate electrodes in MOS devices

A study on a broadband photodetector based on hybrid 2D copper oxide/reduced graphene oxide

These days, photodetectors are a crucial part of optoelectronic devices, ranging from environmental monitoring to international communication systems. Therefore, fabricating these devices at a low cost but obtaining high sensitivity in a wide range of wavelengths is of great interest. This report introduces a simple solution-processed hybrid 2D structure of CuO and rGO for broadband photodetector applications. Particularly, 2D CuO acts as the active material, absorbing light to generate electron-hole pairs, while 2D rGO plays the role of a transport layer, driving charge carriers between two electrodes. Our device exhibits remarkable sensitivity to a wide wavelength range from 395 nm to 945 nm (vis-NIR region). Interestingly, our devices' responsivity and photoconductive gain were calculated (under 395 nm wavelength excitation) to be up to 8 mA W-1 and 28 fold, respectively, which are comparable values with previous publications. Our hybrid 2D structure between rGO and CuO enables a potential approach for developing low-cost but high-performance optoelectronic devices, especially photodetectors, in the future.

Boosting Interfacial Polarization Through Heterointerface Engineering in MXene/Graphene Intercalated-Based Microspheres for Electromagnetic Wave Absorption

Multi-layer 2D material assemblies provide a great number of interfaces beneficial for electromagnetic wave absorption. However, avoiding agglomeration and achieving layer-by-layer ordered intercalation remain challenging. Here, 3D reduced graphene oxide (rGO)/MXene/TiO2/Fe2C lightweight porous microspheres with periodical intercalated structures and pronounced interfacial effects were constructed by spray-freeze-drying and microwave irradiation based on the Maxwell-Wagner effect. Such approach reinforced interfacial effects via defects introduction, porous skeleton, multi-layer assembly and multi-component system, leading to synergistic loss mechanisms. The abundant 2D/2D/0D/0D intercalated heterojunctions in the microspheres provide a high density of polarization charges while generating abundant polarization sites, resulting in boosted interfacial polarization, which is verified by CST Microwave Studio simulations. By precisely tuning the 2D nanosheets intercalation in the heterostructures, both the polarization loss and impedance matching improve significantly. At a low filler loading of 5 wt%, the polarization loss rate exceeds 70%, and a minimum reflection loss (RLmin) of -67.4 dB can be achieved. Moreover, radar cross-section simulations further confirm the attenuation ability of the optimized porous microspheres. These results not only provide novel insights into understanding and enhancing interfacial effects, but also constitute an attractive platform for implementing heterointerface engineering based on customized 2D hierarchical architectures.

Chemical-free transfer of patterned reduced graphene oxide thin films for large area flexible electronics and nanoelectromechanical systems

In this paper, a wet-dry hybrid technique to transfer patterned reduced graphene oxide (rGO) thin film to arbitrary substrates at predetermined locations without using any chemicals is reported. The transfer process involves water-assisted delamination of rGO, followed by dry transfer to an acceptor substrate using viscoelastic stamp. Patterned reduced graphene oxide films are transferred to silicon dioxide (SiO₂/Si) substrate to begin with. Subsequently, the method is deployed to transfer rGO to different polymer substrates such as poly(methyl methacrylate) (PMMA), and crosslinked poly(4-vinylphenol) (c-PVP), which are commonly used as gate dielectric in flexible electronic applications. The credibility of the transfer process with precise spatial positioning on the target substrate leads to fabrication of freely suspended reduced graphene oxide membrane towards nanoelectromechanical systems (NEMS) based devices such as nanomechanical drum resonators.

A Reconfigurable Remotely Epitaxial VO2 Electrical Heterostructure

The reconfigurability of the electrical heterostructure featured with external variables, such as temperature, voltage, and strain, enabled electronic/optical phase transition in functional layers has great potential for future photonics, computing, and adaptive circuits. VO₂ has been regarded as an archetypal phase transition building block with superior metal-insulator transition characteristics. However, the reconfigurable VO₂-based heterostructure and the associated devices are rare due to the fundamental challenge in integrating high-quality VO₂ in technologically important substrates. In this report, for the first time, we show the remote epitaxy of VO₂ and the demonstration of a vertical diode device in a graphene/epitaxial VO₂/single-crystalline BN/graphite structure with VO₂ as a reconfigurable phase-change material and hexagonal boron nitride (h-BN) as an insulating layer. By diffraction and electrical transport studies, we show that the remote epitaxial VO₂ films exhibit higher structural and electrical quality than direct epitaxial ones. By high-resolution transmission electron microscopy and Cs-corrected scanning transmission electron microscopy, we show that a graphene buffered substrate leads to a less strained VO₂ film than the bare substrate. In the reconfigurable diode, we find that the Fermi level change and spectral weight shift along with the metal-insulator transition of VO₂ could modify the transport characteristics. The work suggests the feasibility of developing a single-crystalline VO₂-based reconfigurable heterostructure with arbitrary substrates and sheds light on designing novel adaptive photonics and electrical devices and circuits.

Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes

The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability, and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A(-1) and 98.2 lm W(-1), respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability.

Long-term stability of Si-organic hybrid solar cells with a thermally tunable graphene oxide platform

The PEDOT:PSS/Si solar cell with a rGO layer enhances the stability in a package-free device as the rGO layer with various annealing temperatures plays a critical role as a passivation layer in the PEDOT:PSS/Si interface.

Surface engineering of reduced graphene oxide for controllable ambipolar flash memories

Tunable charge-trapping behaviors including unipolar charge trapping of one type of charge carrier and ambipolar trapping of both electrons and holes in a complementary manner is highly desirable for low power consumption multibit flash memory design. Here, we adopt a strategy of tuning the Fermi level of reduced graphene oxide (rGO) through self-assembled monolayer (SAM) functionalization and form p-type and n-type doped rGO with a wide range of manipulation on work function. The functionalized rGO can act as charge-trapping layer in ambipolar flash memories, and a dramatic transition of charging behavior from unipolar trapping of electrons to ambipolar trapping and eventually to unipolar trapping of holes was achieved. Adjustable hole/electron injection barriers induce controllable Vth shift in the memory transistor after programming operation. Finally, we transfer the ambipolar memory on flexible substrates and study their charge-trapping properties at various bending cycles. The SAM-functionalized rGO can be a promising candidate for next-generation nonvolatile memories.

Phosphorene oxide: stability and electronic properties of a novel two-dimensional material

Phosphorene, the monolayer form of (black) phosphorus, was recently exfoliated from its bulk counterpart. Phosphorene oxide, by analogy to graphene oxide, is expected to have novel chemical and electronic properties, and may provide an alternative route to the synthesis of phosphorene. In this research, the physical and chemical properties of phosphorene oxide including its formation by oxygen adsorption on the bare phosphorene was investigated. Analysis of the phonon dispersion curves finds stoichiometric and non-stoichiometric oxide configurations to be stable at ambient conditions, thus suggesting that the oxygen adsorption may not degrade the phosphorene. The nature of the band gap of the oxides depends on the degree of functionalization of phosphorene; an indirect gap is predicted for the non-stoichiometric configurations, whereas a direct gap is predicted for the stoichiometric oxide. Application of mechanical strain or an external electric field leads to tunability of the band gap of the phosphorene oxide. In contrast to the case of the bare phosphorene, dependence of the diode-like asymmetric current-voltage response on the degree of stoichiometry is predicted for the phosphorene oxide.