Vertical-interface-manipulated conduction behavior in nanocomposite oxide thin films

Triadic Halobenzene Processing Additive Combined Advantages of Both Solvent and Solid Types for Efficient and Stable Organic Solar Cells

Solvent additives with a high boiling point (BP) and low vapor pressure (VP) have formed a key handle for improving the performance of organic solar cells (OSCs). However, it is not always clear whether they remain in the active-layer film after deposition, which can negatively affect the reproducibility and stability of OSCs. In this study, an easily removable solvent additive (4-chloro-2-fluoroiodobenzene (CFIB)) with a low BP and high VP is introduced, behaving like volatile solid additives that can be completely removed during the device fabrication process. In-depth studies of CFIB addition into the D18-Cl donor and N3 acceptor validate its dominant non-covalent intermolecular interactions with N3 through effective electrostatic interactions. Such phenomena improve charge dynamics and kinetics by optimizing the morphology, leading to enhanced performance of D18-Cl:N3-based devices with a power conversion efficiency of 18.54%. The CFIB-treated device exhibits exceptional thermal stability (T80 lifetime = 120 h) at 85 °C compared with the CFIB-free device, because of its morphological robustness by evolving no residual CFIB in the film. The CFIB features a combination of advantages of solvent (easy application) and solid (high volatility) additives, demonstrating its great potential use in the commercial mass production of OSCs.

Enhanced Memristive Performance via a Vertically Heterointerface in Nanocomposite Thin Films for Artificial Synapses

Memristors can be used to mimic synaptic behavior in artificial neural networks, which makes them a key component in neuromorphic computing and holds promise for advancing the field. In this study, a memory artificial synaptic device based on ZnO-BaTiO3 (ZnO-BTO) vertically aligned nanocomposite thin films was prepared. The vertical interface between the two phases can be used as a conduit for oxygen vacancy (OV) accumulation and a channel for OV movement, which greatly optimizes the resistive switching performance of the device and has the potential for multistage storage. By applying different pulse sequences to the device, the conductance of the device is adjusted from multiple angles, and a variety of synaptic functions are simulated, such as paired-pulse facilitation, spike-timing-dependent plasticity, short-term plasticity to long-term plasticity (STP-LTP), and long-term potentiation/depression (LTP/LTD). Finally, we construct a neural network for image recognition, and the recognition accuracy can reach 91%. Our study demonstrates the feasibility of using composite thin-film vertical interface to regulate the resistive performance of memristors and its great potential in artificial synaptic simulation and neuromorphic computing.

Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges

Interfaces in complex oxides give rise to fascinating new physical phenomena arising from the interconnected spin, lattice, charge and orbital degrees of freedom. Most commonly, interfaces are engineered in epitaxial superlattice films. Of growing interest also are epitaxial vertically aligned nanocomposite films where interfaces form by self-assembly. These two thin film forms offer different capabilities for materials tuning and have been explored largely separately from one another. Ferroics (ferroelectric, ferromagnetic, multiferroic) are among the most fascinating phenomena to be manipulated using interface effects. Hence, in this review we compare and contrast the ferroic properties that arise in these two different film forms, highlighting exemplary materials combinations which demonstrate novel, enhanced and/or emergent ferroic functionalities. We discuss the origins of the observed functionalities and propose where knowledge can be translated from one materials form to another, to potentially produce new functionalities. Finally, for the two different film forms we present a perspective on underexplored/emerging research directions.

Reducing leakage current and enhancing polarization in multiferroic 3D super-nanocomposites by microstructure engineering

Multiferroic materials have generated great interest due to their potential as functional device materials. Nanocomposites have been increasingly used to design and generate new functionalities by pairing dissimilar ferroic materials, though the combination often introduces new complexity and challenges unforeseeable in single-phase counterparts. The recently developed approaches to fabricate 3D super-nanocomposites (3D-sNC) open new avenues to control and enhance functional properties. In this work, we develop a new 3D-sNC with CoFe₂O₄(CFO) short nanopillar arrays embedded in BaTiO₃(BTO) film matrix via microstructure engineering by alternatively depositing BTO:CFO vertically-aligned nanocomposite layers and single-phase BTO layers. This microstructure engineering method allows encapsulating the relative conducting CFO phase by the insulating BTO phase, which suppress the leakage current and enhance the polarization. Our results demonstrate that microstructure engineering in 3D-sNC offers a new bottom-up method of fabricating advanced nanostructures with a wide range of possible configurations for applications where the functional properties need to be systematically modified.

High-Temperature and Flexible Piezoelectric Sensors for Lamb-Wave-Based Structural Health Monitoring

Piezoelectric sensors can be utilized in Lamb-wave-based structural health monitoring (SHM), which is an effective method for aircraft structural damage detection. However, due to the inherent stiffness, brittleness, weight, and thickness of piezoelectric ceramics, their applications in aircraft structures with complex curved surfaces are seriously restricted. Herein, we report a flexible, light-weight, and high-performance BaTiO₃:Sm₂O₃/SrRuO₃/SrTiO₃/mica film sensor that can be used in high-temperature SHM of aircraft. Enhanced ferroelectric Curie temperature (487 °C) and piezoelectric coefficient d₃₃ (120-130 pm/V) are achieved in BaTiO₃, which can be attributed to the tensile strain developed by stiff Sm₂O₃ nanopillars. Stable ferroelectricity and piezoelectricity are retained up to 150 °C. The flexible BaTiO₃:Sm₂O₃/SrRuO₃/SrTiO₃/mica film is validated as an ultrasonic sensor with high sensitivity and stability for damage monitoring on aircraft structures with the curved surface ranging from 25 to 150 °C. Our work demonstrates that flexible and light-weight BaTiO₃:Sm₂O₃/SrRuO₃/SrTiO₃/mica film sensors can be employed as high-temperature piezoelectric sensors for real-time SHM of aircraft structures with complex curved surfaces.

Oxidic 2D Materials

The possibility of producing stable thin films, only a few atomic layers thick, from a variety of materials beyond graphene has led to two-dimensional (2D) materials being studied intensively in recent years. By reducing the layer thickness and approaching the crystallographic monolayer limit, a variety of unexpected and technologically relevant property phenomena were observed, which also depend on the subsequent arrangement and possible combination of individual layers to form heterostructures. These properties can be specifically used for the development of multifunctional devices, meeting the requirements of the advancing miniaturization of modern manufacturing technologies and the associated need to stabilize physical states even below critical layer thicknesses of conventional materials in the fields of electronics, magnetism and energy conversion. Differences in the structure of potential two-dimensional materials result in decisive influences on possible growth methods and possibilities for subsequent transfer of the thin films. In this review, we focus on recent advances in the rapidly growing field of two-dimensional materials, highlighting those with oxidic crystal structure like perovskites, garnets and spinels. In addition to a selection of well-established growth techniques and approaches for thin film transfer, we evaluate in detail their application potential as free-standing monolayers, bilayers and multilayers in a wide range of advanced technological applications. Finally, we provide suggestions for future developments of this promising research field in consideration of current challenges regarding scalability and structural stability of ultra-thin films.

Induced ferroelectric phases in SrTiO3 by a nanocomposite approach

Inducing new phases in thick films via vertical lattice strain is one of the critical advantages of vertically aligned nanocomposites (VANs). In SrTiO₃ (STO), the ground state is ferroelastic, and the ferroelectricity in STO is suppressed by the orthorhombic transition. Here, we explore whether vertical lattice strain in three-dimensional VANs can be used to induce new ferroelectric phases in SrTiO₃:MgO (STO:MgO) VAN thin films. The STO:MgO system incorporates ordered, vertically aligned MgO nanopillars into a STO film matrix. Strong lattice coupling between STO and MgO imposes a large lattice strain in the STO film. We have investigated ferroelectricity in the STO phase, existing up to room temperature, using piezoresponse force microscopy, phase field simulation and second harmonic generation. We also serendipitously discovered the formation of metastable TiO nanocores in MgO nanopillars embedded in the STO film matrix. Our results emphasize the design of new phases via vertical epitaxial strain in VAN thin films.

Interface Engineered Room-Temperature Ferromagnetic Insulating State in Ultrathin Manganite Films

Ultrathin epitaxial films of ferromagnetic insulators (FMIs) with Curie temperatures near room temperature are critically needed for use in dissipationless quantum computation and spintronic devices. However, such materials are extremely rare. Here, a room-temperature FMI is achieved in ultrathin La0.9Ba0.1MnO3 films grown on SrTiO3 substrates via an interface proximity effect. Detailed scanning transmission electron microscopy images clearly demonstrate that MnO6 octahedral rotations in La0.9Ba0.1MnO3 close to the interface are strongly suppressed. As determined from in situ X-ray photoemission spectroscopy, O K-edge X-ray absorption spectroscopy, and density functional theory, the realization of the FMI state arises from a reduction of Mn eg bandwidth caused by the quenched MnO6 octahedral rotations. The emerging FMI state in La0.9Ba0.1MnO3 together with necessary coherent interface achieved with the perovskite substrate gives very high potential for future high performance electronic devices.

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

Vertically aligned nanocomposite thin films with ordered two phases, grown epitaxially on substrates, have attracted tremendous interest in the past decade. These unique nanostructured composite thin films with large vertical interfacial area, controllable vertical lattice strain, and defects provide an intriguing playground, allowing for the manipulation of a variety of functional properties of the materials via the interplay among strain, defect, and interface. This field has evolved from basic growth and characterization to functionality tuning as well as potential applications in energy conversion and information technology. Here, the remarkable progress achieved in vertically aligned nanocomposite thin films from a perspective of tuning functionalities through control of strain, defect, and interface is summarized.

Enhanced polarization and dielectricity in BaTiO3:NiO nanocomposite films modulated by the microstructure

Parallel and vertical interfaces in vertically and parallelly aligned nanocomposite thin films have been shown to be an effective method to manipulate functionalities.

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO₃ (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu₃Ti₄O₁₂ (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications.

Enhancement of the Electrical Properties in BaTiO3/PbZr0.52Ti0.48O3 Ferroelectric Superlattices

In this study, BaTiO3/Pb(Zr0.52Ti0.48)O3 (BTO/PZT) ferroelectric superlattices have been grown on the Nb-doped SrTiO3 (NSTO) single-crystal substrate by pulsed laser deposition, and their electrical properties were investigated in detail. The leakage current was reduced significantly in the BTO/PZT superlattices, and the conduction mechanism could be interpreted as the bulk-limited mechanism. In addition, a more symmetric hysteresis loop was observed in the BTO/PZT superlattices compared with the pure PZT and BTO films. The BTO/PZT superlattices with the modulation thickness of 9.8 nm showed remarkably improved dielectric properties with dielectric constant and loss of 684 and 0.02, respectively, measured at the frequency of 10 kHz. Based on these experimental results, it can be considered that the BTO/PZT interfaces play a very important role for the enhanced electrical properties of the BTO/PZT superlattices.

Coexistence of resistance switching and negative differential resistance in the α-Fe2O3 nanorod film

The coexistence of resistance switching behaviour and the negative differential resistance phenomenon was presented in the α-Fe₂O₃ nanorod film that was in situ grown on a fluorine-doped tin oxide glass substrate. The migration of inner defects is revealed to be closely related to the switching behaviours.

Vertical Interface Induced Dielectric Relaxation in Nanocomposite (BaTiO3)1-x:(Sm2O3)x Thin Films

Vertical interfaces in vertically aligned nanocomposite thin films have been approved to be an effective method to manipulate functionalities. However, several challenges with regard to the understanding on the physical process underlying the manipulation still remain. In this work, because of the ordered interfaces and large interfacial area, heteroepitaxial (BaTiO₃)_1-x:(Sm₂O₃)_x thin films have been fabricated and used as a model system to investigate the relationship between vertical interfaces and dielectric properties. Due to a relatively large strain generated at the interfaces, vertical interfaces between BaTiO₃ and Sm₂O₃ are revealed to become the sinks to attract oxygen vacancies. The movement of oxygen vacancies is confined at the interfaces and hampered by the misfit dislocations, which contributed to a relaxation behavior in (BaTiO₃)_1-x:(Sm₂O₃)_x thin films. This work represents an approach to further understand that how interfaces influence on dielectric properties in oxide thin films.