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Shang K, Feng J, Zhang B, Liu J, Ming X, Kuang X. Tolerance Factor and Phase Stability of the KCoO 2-Type AMN 2 Nitrides. Inorg Chem 2024; 63:4168-4175. [PMID: 38373068 DOI: 10.1021/acs.inorgchem.3c04067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/21/2024]
Abstract
In order to help understand the structural stability of KCoO2-type ternary nitrides AMN2, referring to perovskite structure, a tolerance factor t is proposed to describe the size effect on the phase/symmetry options of the experimentally accessible AMN2 nitrides. This leads to a range of t values above 0.946 for structurally stable KCoO2-type AMN2 nitrides with t values around 0.970 for the orthorhombic and tetragonal phase boundary. In contrast, most of AMN2 nitrides exhibit α-NaFeO2-type structure with t ∼ 0.898-0.946 and cations ordered or disordered rocksalt structure while t below 0.898. Employing the proposed criterion, the structure formation for other ternary AMN2 compositions with lanthanum and alkaline earth cations for the A sites were predicted, which was testified through the synthesis attempts and complemented by formation energy evaluations. The efforts to synthesize the ternary Lanthanide and alkaline earth-based AMN2 nitrides were unsuccessful, which could associate the structural instability with the large formation energies of lanthanide nitrides LaMN2 and the greater tolerance factor of 1.048 for BaTiN2. The experimentally already synthesized AMN2 nitrides could be categorized into three types with different tolerance factors, and scarce AMN2 nitrides with lower formation energies would be accessible using different synthetic routes beyond the traditional solid-state synthesis method.
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Affiliation(s)
- Kejing Shang
- MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, P. R. China
| | - Jie Feng
- MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, P. R. China
| | - Bowen Zhang
- MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, P. R. China
| | - Junwei Liu
- MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, P. R. China
| | - Xing Ming
- College of Physics and Electronic Information Engineering, Key Laboratory of Low-Dimensional Structural Physics and Application, Education Department of Guangxi Zhuang Autonomous Region, Guilin University of Technology, Guilin 541004, P. R. China
| | - Xiaojun Kuang
- MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, P. R. China
- Guangxi Key Laboratory of Electrochemical and Magnetochemical Functional Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541006, P. R. China
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2
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Rom CL, Novick A, McDermott MJ, Yakovenko AA, Gallawa JR, Tran GT, Asebiah DC, Storck EN, McBride BC, Miller RC, Prieto AL, Persson KA, Toberer E, Stevanović V, Zakutayev A, Neilson JR. Mechanistically Guided Materials Chemistry: Synthesis of Ternary Nitrides, CaZrN 2 and CaHfN 2. J Am Chem Soc 2024; 146:4001-4012. [PMID: 38291812 DOI: 10.1021/jacs.3c12114] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
Recent computational studies have predicted many new ternary nitrides, revealing synthetic opportunities in this underexplored phase space. However, synthesizing new ternary nitrides is difficult, in part because intermediate and product phases often have high cohesive energies that inhibit diffusion. Here, we report the synthesis of two new phases, calcium zirconium nitride (CaZrN2) and calcium hafnium nitride (CaHfN2), by solid state metathesis reactions between Ca3N2 and MCl4 (M = Zr, Hf). Although the reaction nominally proceeds to the target phases in a 1:1 ratio of the precursors via Ca3N2 + MCl4 → CaMN2 + 2 CaCl2, reactions prepared this way result in Ca-poor materials (CaxM2-xN2, x < 1). A small excess of Ca3N2 (ca. 20 mol %) is needed to yield stoichiometric CaMN2, as confirmed by high-resolution synchrotron powder X-ray diffraction. In situ synchrotron X-ray diffraction studies reveal that nominally stoichiometric reactions produce Zr3+ intermediates early in the reaction pathway, and the excess Ca3N2 is needed to reoxidize Zr3+ intermediates back to the Zr4+ oxidation state of CaZrN2. Analysis of computationally derived chemical potential diagrams rationalizes this synthetic approach and its contrast from the synthesis of MgZrN2. These findings additionally highlight the utility of in situ diffraction studies and computational thermochemistry to provide mechanistic guidance for synthesis.
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Affiliation(s)
- Christopher L Rom
- Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872, United States
- Materials Science Center, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Andrew Novick
- Department of Physics, Colorado School of Mines, Golden, Colorado 80401, United States
| | - Matthew J McDermott
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Andrey A Yakovenko
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Jessica R Gallawa
- Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872, United States
| | - Gia Thinh Tran
- Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872, United States
| | - Dominic C Asebiah
- Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872, United States
| | - Emily N Storck
- Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872, United States
| | - Brennan C McBride
- Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872, United States
| | - Rebecca C Miller
- Analytical Resources Core, Colorado State University, Fort Collins, Colorado 80523-1872, United States
| | - Amy L Prieto
- Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872, United States
| | - Kristin A Persson
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Eric Toberer
- Department of Physics, Colorado School of Mines, Golden, Colorado 80401, United States
| | - Vladan Stevanović
- Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401, United States
| | - Andriy Zakutayev
- Materials Science Center, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - James R Neilson
- Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872, United States
- School of Advanced Materials Discovery, Colorado State University, Fort Collins, Colorado 80523, United States
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3
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Cerqueira TFT, Sanna A, Marques MAL. Sampling the Materials Space for Conventional Superconducting Compounds. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307085. [PMID: 37985412 DOI: 10.1002/adma.202307085] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Revised: 11/03/2023] [Indexed: 11/22/2023]
Abstract
A large scale study of conventional superconducting materials using a machine-learning accelerated high-throughput workflow is performed, starting by creating a comprehensive dataset of around 7000 electron-phonon calculations performed with reasonable convergence parameters. This dataset is then used to train a robust machine learning model capable of predicting the electron-phonon and superconducting properties based on structural, compositional, and electronic ground-state properties. Using this machine, the transition temperatures (Tc ) of approximately 200 000 metallic compounds are evaluated, all of which are on the convex hull of thermodynamic stability (or close to it) to maximize the probability of synthesizability. Compounds predicted to have Tc values exceeding 5 K are further validated using density-functional perturbation theory. As a result, 541 compounds with Tc values surpassing 10 K, encompassing a variety of crystal structures and chemical compositions, are identified. This work is complemented with a detailed examination of several interesting materials, including nitrides, hydrides, and intermetallic compounds. Particularly noteworthy is LiMoN2 , which is predicted to be superconducting in the stoichiometric trigonal phase, with a Tc exceeding 38 K. LiMoN2 has previously been synthesized in this phase, further heightening its potential for practical applications.
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Affiliation(s)
- Tiago F T Cerqueira
- CFisUC, Department of Physics, University of Coimbra, Rua Larga, Coimbra, 3004-516, Portugal
| | - Antonio Sanna
- Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120, Halle, Germany
| | - Miguel A L Marques
- Research Center Future Energy Materials and Systems of the University Alliance Ruhr, Faculty of Mechanical Engineering, Ruhr University Bochum, Universitätsstraße 150, D-44801, Bochum, Germany
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4
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Peng J, Chen ZJ, Ding B, Cheng HM. Recent Advances for the Synthesis and Applications of 2-Dimensional Ternary Layered Materials. RESEARCH (WASHINGTON, D.C.) 2023; 6:0040. [PMID: 37040520 PMCID: PMC10076031 DOI: 10.34133/research.0040] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Accepted: 12/13/2022] [Indexed: 01/12/2023]
Abstract
Layered materials with unique structures and symmetries have attracted tremendous interest for constructing 2-dimensional (2D) structures. The weak interlayer interaction renders them to be readily isolated into various ultrathin nanosheets with exotic properties and diverse applications. In order to enrich the library of 2D materials, extensive progress has been made in the field of ternary layered materials. Consequently, many brand-new materials are derived, which greatly extend the members of 2D realm. In this review, we emphasize the recent progress made in synthesis and exploration of ternary layered materials. We first classify them in terms of stoichiometric ratio and summarize their difference in interlayer interaction, which is of great importance to produce corresponding 2D materials. The compositional and structural characteristics of resultant 2D ternary materials are then discussed so as to realize desired structures and properties. As a new family of 2D materials, we overview the layer-dependent properties and related applications in the fields of electronics, optoelectronics, and energy storage and conversion. The review finally provides a perspective for this rapidly developing field.
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Affiliation(s)
- Jing Peng
- Faculty of Materials Science and Energy Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
- Shenzhen Key Laboratory of Energy Materials for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Zheng-jie Chen
- Faculty of Materials Science and Energy Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
- Shenzhen Key Laboratory of Energy Materials for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Baofu Ding
- Faculty of Materials Science and Energy Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
- Shenzhen Key Laboratory of Energy Materials for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Hui-Ming Cheng
- Faculty of Materials Science and Energy Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
- Shenzhen Key Laboratory of Energy Materials for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
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5
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Shiraishi A, Kimura S, He X, Watanabe N, Katase T, Ide K, Minohara M, Matsuzaki K, Hiramatsu H, Kumigashira H, Hosono H, Kamiya T. Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN 2 ( AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors. Inorg Chem 2022; 61:6650-6659. [PMID: 35442660 DOI: 10.1021/acs.inorgchem.2c00604] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
We report the synthesis and optoelectronic properties of high phase-purity (>94 mol %) bulk polycrystals of KCoO2-type layered nitrides AETMN2 (AE = Sr, Ba; and TM = Ti, Zr, Hf), which are expected to exhibit unique electron transport properties originating from their natural two-dimensional (2D) electronic structure, but high-purity intrinsic samples have yet been reported. The bulks were synthesized using a solid-state reaction between AENH and TMN precursors with NaN3 to achieve high N chemical potential during the reaction. The AETMN2 bulks are n-type semiconductors with optical band gaps of 1.63 eV for SrTiN2, 1.97 eV for BaZrN2, and 2.17 eV for BaHfN2. SrTiN2 and BaZrN2 bulks show degenerated electron conduction due to the natural high-density electron doping and paramagnetic behavior in all of the temperature ranges examined, while such unintentional carrier generation is largely suppressed in BaHfN2, which exhibits nondegenerated electron conduction. The BaHfN2 sample also exhibits weak ferromagnetic behavior at temperatures lower than 35 K. Density functional theory calculations suggest that the high-density electron carriers in SrTiN2 come from oxygen impurity substitution at the N site (ON) acting as a shallow donor even if the high-N chemical potential synthesis conditions are employed. On the other hand, the formation energy of ON becomes larger in BaHfN2 because of the stronger TM-N chemical bonds. Present results demonstrate that the easiness of impurity incorporation is designed by density functional calculations to produce a more intrinsic semiconductor in wider chemical conditions, opening a way to cultivating novel functional materials that are sensitive to atmospheric impurities and defects.
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Affiliation(s)
- Akihiro Shiraishi
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
| | - Shigeru Kimura
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
| | - Xinyi He
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
| | - Naoto Watanabe
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
| | - Takayoshi Katase
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
| | - Keisuke Ide
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
| | - Makoto Minohara
- Research Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
| | - Kosuke Matsuzaki
- Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
| | - Hidenori Hiramatsu
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan.,Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
| | - Hiroshi Kumigashira
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
| | - Hideo Hosono
- Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
| | - Toshio Kamiya
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan.,Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
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6
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Ohkubo I, Mori T. d z2 orbital character of polyhedra in complex solid-state transition-metal compounds. Dalton Trans 2020; 49:431-437. [PMID: 31833501 DOI: 10.1039/c9dt04091a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In transition-metal compounds, the character of the d orbitals often plays an important role in the development and enhancement of novel physical and chemical properties. Density functional theory calculations of the electronic structures of various d0- and d1-complex transition-metal compounds consisting of either face-sharing octahedra, edge-sharing octahedra, or edge-sharing trigonal prismatic layers were performed to investigate the nature of their d orbitals. The dz2 orbital of the transition metal was shown to make a significant contribution to the electronic structure near the Fermi level in nine different complex transition-metal compounds (oxides, nitrides, and sulfides), regardless of the type of polyhedral geometry and connectivity. The importance of controlling and designing the dz2 orbital character of transition metals near the Fermi level was shown to be important in developing novel physical and chemical properties in complex transition-metal compounds.
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Affiliation(s)
- Isao Ohkubo
- Center for Functional Sensor & Actuator (CFSN), Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
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7
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Boucenna S, Haddadi K, Bouhemadou A, Louail L, Soyalp F, Khenata R. Elastic, electronic, chemical bonding and thermodynamic properties of the ternary nitride Ca 4TiN 4: Ab initio predictions. J Mol Graph Model 2019; 92:74-85. [PMID: 31344546 DOI: 10.1016/j.jmgm.2019.07.006] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2019] [Revised: 07/10/2019] [Accepted: 07/15/2019] [Indexed: 11/17/2022]
Abstract
In order to shed light on the unexplored properties of the ternary nitride Ca4TiN4, we report for the first time the results of an ab initio study of its structural, electronic, elastic, chemical bonding and thermodynamic properties. Calculated equilibrium structural parameters are in excellent concordance with available experimental data. Electronic properties were explored through the calculation of the energy band dispersions and density of states. It is found that Ca4TiN4 has an indirect band gap (Z-Γ) of 1.625 (1.701) eV using LDA (GGA). Nature of the chemical bonding was studied via Mulliken population analysis and charge density distribution map. It is found that the Ca-N bond is dominantly ionic, whereas the Ti-N one is dominantly covalent. Elastic properties of both single-crystal and polycrystalline phases of the title compound were explored in details using the stain-stress approach. Analysis of the calculated elastic moduli reveals that the title compound is mechanically stable, ductile and elastically anisotropic. Temperature and pressure dependencies of the unit-cell volume, bulk modulus, heat capacities, volume thermal expansion coefficient, Grüneisen parameter and Debye temperature were investigated based on the quasiharmonic Debye model.
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Affiliation(s)
- S Boucenna
- Unité de Recherche Matériaux Emergents, University Ferhat Abbas Setif 1, 19000, Setif, Algeria
| | - K Haddadi
- Unité de Recherche Matériaux Emergents, University Ferhat Abbas Setif 1, 19000, Setif, Algeria.
| | - A Bouhemadou
- Laboratory for Developing New Materials and Their Characterizations, University Ferhat Abbas Setif 1, 19000, Setif, Algeria
| | - L Louail
- Unité de Recherche Matériaux Emergents, University Ferhat Abbas Setif 1, 19000, Setif, Algeria
| | - F Soyalp
- Yüzüncü Yıl Üniversitesi Eǧitim Fakültesi Fizik Bölümü, Van, Turkey
| | - R Khenata
- Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, 29000, Mascara, Algeria
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8
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Bauers SR, Holder A, Sun W, Melamed CL, Woods-Robinson R, Mangum J, Perkins J, Tumas W, Gorman B, Tamboli A, Ceder G, Lany S, Zakutayev A. Ternary nitride semiconductors in the rocksalt crystal structure. Proc Natl Acad Sci U S A 2019; 116:14829-14834. [PMID: 31270238 PMCID: PMC6660719 DOI: 10.1073/pnas.1904926116] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optical and electronic devices. In contrast, rocksalt-structured nitrides are known for their superconducting and refractory properties. Breaking this dichotomy, here we report ternary nitride semiconductors with rocksalt crystal structures, remarkable electronic properties, and the general chemical formula Mgx TM 1-xN (TM = Ti, Zr, Hf, Nb). Our experiments show that these materials form over a broad metal composition range, and that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8 to 2.1 eV) and up to 100 cm2 V-1⋅s-1 electron mobility for MgZrN2 grown on MgO substrates. Complementary ab initio calculations reveal that these materials have disorder-tunable optical absorption, large dielectric constants, and electronic bandgaps that are relatively insensitive to disorder. These ternary Mgx TM 1-xN semiconductors are also structurally compatible both with binary TMN superconductors and main-group nitride semiconductors along certain crystallographic orientations. Overall, these results highlight Mgx TM 1-xN as a class of materials combining the semiconducting properties of main-group wurtzite nitrides and rocksalt structure of superconducting transition-metal nitrides.
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Affiliation(s)
- Sage R Bauers
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401;
| | - Aaron Holder
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401
- Department of Chemical and Biological Engineering, University of Colorado, Boulder, Boulder, CO 80309
| | - Wenhao Sun
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
| | - Celeste L Melamed
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401
- Department of Physics, Colorado School of Mines, Golden, CO 80401
| | - Rachel Woods-Robinson
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
- Applied Science and Technology Graduate Group, University of California, Berkeley, CA 94720
| | - John Mangum
- Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401
| | - John Perkins
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401
| | - William Tumas
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401
| | - Brian Gorman
- Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401
| | - Adele Tamboli
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401
| | - Gerbrand Ceder
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
| | - Stephan Lany
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401
| | - Andriy Zakutayev
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401;
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9
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Ohkubo I, Mori T. Origin of Projected Excellent Thermoelectric Transport Properties in d
0
‐Electron AMN
2
(A = Sr or Ba; M = Ti, Zr, Hf) Layered Complex Metal Nitrides. Eur J Inorg Chem 2015. [DOI: 10.1002/ejic.201500350] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Isao Ohkubo
- WPI Research Center, International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1‐1 Namiki, Tsukuba, Ibaraki 305‐0044, Japan, http://www.nims.go.jp/eng/index.html
| | - Takao Mori
- WPI Research Center, International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1‐1 Namiki, Tsukuba, Ibaraki 305‐0044, Japan, http://www.nims.go.jp/eng/index.html
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10
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Ohkubo I, Mori T. Three-dimensionality of electronic structures and thermoelectric transport in SrZrN₂ and SrHfN₂ layered complex metal nitrides. Inorg Chem 2014; 53:8979-84. [PMID: 25100000 DOI: 10.1021/ic500902q] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Layered materials have several properties that make them suitable as high-performance thermoelectric materials. In this study, we focus on the complex metal nitrides SrZrN2 and SrHfN2, which have an α-NaFeO2 layered crystal structure. To determine their electronic band structure features and potential thermoelectric transport properties, we calculated the electronic band structures and electronic transport coefficients for SrZrN2 and SrHfN2 using density-functional theory and Boltzmann transport theory, respectively. Despite the layered crystal structure, SrZrN2 and SrHfN2 both had three-dimensional electronic structures and isotropic electronic transport because of the contribution of the Sr 4d(x(2)-y(2)) + 4d(xy) orbitals to the bottom of the conduction bands in addition to that of the Zr 4d(z)(2) (Hf 5d(z)(2)) orbital. The three-dimensional electronic structures predict the appearance of large Seebeck coefficients (-145 μV K(-1) at 300 K, -370 μV K(-1) at 1200 K) and large electronic thermoelectric figures of merit.
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Affiliation(s)
- Isao Ohkubo
- WPI Research Center, International Center for Materials Nanoarchitectonics, National Institute for Materials Science , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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11
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Orisakwe E, Fontaine B, Gregory DH, Gautier R, Halet JF. Theoretical study on the structural, electronic and physical properties of layered alkaline-earth-group-4 transition-metal nitrides AEMN2. RSC Adv 2014. [DOI: 10.1039/c4ra05395h] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Thermodynamic, structural, and electronic properties of the layered ternary nitrides AEMN2 (AE = alkaline-earth; M = group 4 transition metal) both with the KCoO2 and α-NaFeO2 structure-types are examined within density-functional theory.
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Affiliation(s)
- Esther Orisakwe
- Institut des Sciences Chimiques de Rennes
- UMR 6226 CNRS – Université de Rennes 1 – Ecole Nationale Supérieure de Chimie de Rennes
- F-35708 Rennes Cedex 7, France
| | - Bruno Fontaine
- Institut des Sciences Chimiques de Rennes
- UMR 6226 CNRS – Université de Rennes 1 – Ecole Nationale Supérieure de Chimie de Rennes
- F-35708 Rennes Cedex 7, France
| | | | - Régis Gautier
- Institut des Sciences Chimiques de Rennes
- UMR 6226 CNRS – Université de Rennes 1 – Ecole Nationale Supérieure de Chimie de Rennes
- F-35708 Rennes Cedex 7, France
| | - Jean-François Halet
- Institut des Sciences Chimiques de Rennes
- UMR 6226 CNRS – Université de Rennes 1 – Ecole Nationale Supérieure de Chimie de Rennes
- F-35708 Rennes Cedex 7, France
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12
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Abstract
▪ Abstract A new series of superconductors based on layer structured nitrides has been developed. The general compositions of the nitrides are MNX (M = Zr, Hf; X = Cl, Br, I). The β-type polymorph consists of MN double layers sandwiched between close-packed halogen layers, which are characterized as semiconductors with a band gap of 3–4 eV. Electrons can be doped to the nitride layers by intercalation of alkali metals between the layers. Upon the intercalation, the compounds become superconductors with the transition temperatures (Tc s) as high as 13 and 25.5 K for β-ZrNCl and β-HfNCl systems, respectively. The Tc of the electron doped β-HfNCl is higher than that observed in any intermetallic compound and suggests that layered nitrides may exhibit Tc s comparable to those observed in layer structured complex copper oxide superconductors. The layer structured nitrides can be variously modified by the amounts of doping, the types of alkali metals, and the interlayer separation, which can be controlled by co-intercalation of organic molecules with alkali metals. This article dicusses topics including the synthesis and structure of the transition metal nitride halides, intercalation, superconductivity, and band structures.
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Affiliation(s)
- Shoji Yamanaka
- Department of Applied Chemistry, Faculty of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, Japan
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Gregory DH, Barker MG, Edwards PP, Siddons DJ. Synthesis and Structure of the New Ternary Nitride SrTiN(2). Inorg Chem 1998; 37:3775-3778. [PMID: 11670478 DOI: 10.1021/ic971556z] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
A new ternary nitride, SrTiN(2), has been synthesized by the solid-state reaction of Sr(2)N with TiN and characterized by powder X-ray diffraction. SrTiN(2) crystallizes in the tetragonal space group P4/nmm (a = 3.8799(2) Å, c = 7.6985(4) Å, Z = 2) and is isostructural with KCoO(2). Titanium is coordinated to five nitrogens in a distorted square-based pyramidal geometry, forming layers of edge-sharing pyramids which stack along the (001) direction. Strontium is situated between the Ti-N layers and is coordinated to five nitrogen atoms. The title compound is only the third example of a ternary titanium nitride.
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Affiliation(s)
- D. H. Gregory
- Department of Chemistry, University of Nottingham, Nottingham NG7 2RD, U.K., and School of Chemistry, University of Birmingham, Edgbaston, Birmingham B15 2TT, U.K
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Gregory D, Barker M, Edwards P, Slaski M, Siddons D. Synthesis, Structure, and Magnetic Properties of the New Ternary Nitride BaHfN2and of the BaHf1−xZrxN2Solid Solution. J SOLID STATE CHEM 1998. [DOI: 10.1006/jssc.1997.7686] [Citation(s) in RCA: 36] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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Nakajima H, Tanaka H, Hibino M, Kudo T, Mizuno N. Reaction of Nitrides of Molybdenum and Tungsten with Hydrogen Peroxide to Form Inorganic Proton Conductors. BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN 1998. [DOI: 10.1246/bcsj.71.955] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
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