Surface transfer p-type doping of epitaxial graphene

Realizing Ultrafast Response Speed for Self-Powered Photodetectors with a Molecular-Doped Lateral InSe Homojunction

The implementation of energy-saving policies has stimulated intensive interest in exploring self-powered optoelectronic devices. The 2D p-n homojunction exhibits effective generation and separation of carriers excited by light, realizing lower power consumption and higher performance photodetectors. Here, a self-powered photodetector with high performance is fabricated based on an F4-TCNQ localized molecular-doped lateral InSe homojunction. Compared with the intrinsic InSe photodetector, the switching light ratio (Ilight/Idark) of the p-n homojunction device can be enhanced by 2.2 × 104, and the temporal response is also dramatically improved to 24/30 μs. Benefiting from the built-in electric field, due to the formation of an InSe p-n homojunction after partial doping of F4-TCNQ on InSe, the device possesses a high responsivity (R) of 93.21 mA/W, with a specific detectivity (D*) of 1.14 × 1011 Jones. These results suggest a promising approach to get a lateral InSe p-n homojunction and reveal the potential application of the device for next generation low-consumption photodetectors.

Scope and Limitations of Using Microemulsions for the Covalent Patterning of Graphene

Patterning of graphene (functionalizing some areas while leaving others intact) is challenging, as all the C atoms in the basal plane are identical, but it is also desirable for a variety of applications, like opening a bandgap in the electronic structure of graphene. Several methods have been reported to pattern graphene, but most of them are very technologically intensive. Recently, we reported the use of microemulsions as templates to pattern graphene at the μm scale. This method is very simple and in principle tunable, as emulsions of different droplet size and composition can be prepared easily. Here, we explore in detail the scope of this methodology by applying it to all the combinations of four different emulsions and three different organic reagents, and characterizing the resulting substrates exhaustively through Raman, SEM and AFM. We find that the method is general, works better when the reactive species are outside the micelles, and requires reactive species that involve short reaction times.

Dedoping of Intraband Silver Selenide Colloidal Quantum Dots through Strong Electronic Coupling at Organic/Inorganic Hybrid Interfaces

Colloidal quantum dot (CQD) infrared (IR) photodetectors can be fabricated and operated with larger spectral tunability, fewer limitations in terms of cooling requirements and substrate lattice matching, and at a potentially lower cost than detectors based on traditional bulk materials. Silver selenide (Ag2Se) has emerged as a promising sustainable alternative to current state-of-the-art toxic semiconductors based on lead, cadmium, and mercury operating in the IR. However, an impeding gap in available absorption bandwidth for Ag2Se CQDs exists in the short-wave infrared (SWIR) region due to degenerate doping by the environment, switching the CQDs from intrinsic interband semiconductors in the near-infrared (NIR) to intraband absorbing CQDs in the mid-wave infrared (MWIR). Herein, we show that the small molecular p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) can be used to extract electrons from the 1Se state of MWIR active Ag2Se CQDs to activate their intrinsic energy gap in the SWIR window. We demonstrate quenching of the MWIR Ag2Se absorbance peak, shifting of nitrile vibrational peaks characteristic of charge-neutral F4-TCNQ, as well as enhanced CQD absorption around ∼2500 nm after doping both in ambient and under air-free conditions. We elucidate the doping mechanism to be one that involves an integer charge transfer akin to doping in semiconducting polymers. These indications of charge transfer are promising milestones on the path to achieving sustainable SWIR Ag2Se CQD photodetectors.

Screening 2D Materials for Their Nanotoxicity toward Nucleic Acids and Proteins: An In Silico Outlook

Since the discovery of graphene, two-dimensional (2D) materials have been anticipated to demonstrate enormous potential in bionanomedicine. Unfortunately, the majority of 2D materials induce nanotoxicity via disruption of the structure of biomolecules. Consequently, there has been an urge to synthesize and identify biocompatible 2D materials. Before the cytotoxicity of 2D nanomaterials is experimentally tested, computational studies can rapidly screen them. Additionally, computational analyses can provide invaluable insights into molecular-level interactions. Recently, various "in silico" techniques have identified these interactions and helped to develop a comprehensive understanding of nanotoxicity of 2D materials. In this article, we discuss the key recent advances in the application of computational methods for the screening of 2D materials for their nanotoxicity toward two important categories of abundant biomolecules, namely, nucleic acids and proteins. We believe the present article would help to develop newer computational protocols for the identification of novel biocompatible materials, thereby paving the way for next-generation biomedical and therapeutic applications based on 2D materials.

van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device

The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.

Phase Engineering of 2D Materials

Polymorphic 2D materials allow structural and electronic phase engineering, which can be used to realize energy-efficient, cost-effective, and scalable device applications. The phase engineering covers not only conventional structural and metal-insulator transitions but also magnetic states, strongly correlated band structures, and topological phases in rich 2D materials. The methods used for the local phase engineering of 2D materials include various optical, geometrical, and chemical processes as well as traditional thermodynamic approaches. In this Review, we survey the precise manipulation of local phases and phase patterning of 2D materials, particularly with ideal and versatile phase interfaces for electronic and energy device applications. Polymorphic 2D materials and diverse quantum materials with their layered, vertical, and lateral geometries are discussed with an emphasis on the role and use of their phase interfaces. Various phase interfaces have demonstrated superior and unique performance in electronic and energy devices. The phase patterning leads to novel homo- and heterojunction structures of 2D materials with low-dimensional phase boundaries, which highlights their potential for technological breakthroughs in future electronic, quantum, and energy devices. Accordingly, we encourage researchers to investigate and exploit phase patterning in emerging 2D materials.

Understanding the Optical Properties of Doped and Undoped 9-Armchair Graphene Nanoribbons in Dispersion

Graphene nanoribbons are one-dimensional stripes of graphene with width- and edge-structure-dependent electronic properties. They can be synthesized bottom-up in solution to obtain precise ribbon geometries. Here we investigate the optical properties of solution-synthesized 9-armchair graphene nanoribbons (9-aGNRs) that are stabilized as dispersions in organic solvents and further fractionated by liquid cascade centrifugation (LCC). Absorption and photoluminescence spectroscopy reveal two near-infrared absorption and emission peaks whose ratios depend on the LCC fraction. Low-temperature single-nanoribbon photoluminescence spectra suggest the presence of two different nanoribbon species. Based on density functional theory (DFT) and time-dependent DFT calculations, the lowest energy transition can be assigned to pristine 9-aGNRs, while 9-aGNRs with edge-defects, caused by incomplete graphitization, result in more blue-shifted transitions and higher Raman D/G-mode ratios. Hole doping of 9-aGNR dispersions with the electron acceptor F4TCNQ leads to concentration dependent bleaching and quenching of the main absorption and emission bands and the appearance of red-shifted, charge-induced absorption features but no additional emission peaks, thus indicating the formation of polarons instead of the predicted trions (charged excitons) in doped 9-aGNRs.

F4-TCNQ on Epitaxial Bi-Layer Graphene: Concentration- and Orientation-Dependent Charge Transfer at the Interface

Bi-layer epitaxial graphene (BLG) on 6H-SiC(0001) (EG/SiC) was grown and modified by thermal deposition of the molecular electron acceptor tetrafluoro-tetra cyano quinodimethane (F4-TCNQ). The surface-modified system, F4-TCNQ/EG/SiC, was studied by X-ray photoelectron spectroscopy (XPS) and angle-resolved polarized Raman spectroscopy (ARPRS). XPS results indicate that bonding of deposited F4-TCNQ molecules depends on their concentration. Although bonding through the cyano groups is present at all concentrations, charge transfer from graphene to fluorine is evident only at sub-monolayer concentrations. The corresponding change in bond character is coupled with a change in molecular orientation. Raman spectroscopy not only provides results consistent with the findings from the XPS study but also reveals a significant degree of molecular stacking above the monolayer concentration. Thus, both the variation of the acceptor concentration and the number of graphene layers provide further handles to manipulate charge and doping that may be useful in device applications.

Breaking of Inversion Symmetry and Interlayer Electronic Coupling in Bilayer Graphene Heterostructure by Structural Implementation of High Electric Displacement Fields

Controlling the interlayer coupling in two-dimensional (2D) materials generates novel electronic and topological phases. Its effective implementation is commonly done with a transverse electric field. However, phases generated by high displacement fields are elusive in this standard approach. Here, we introduce an exceptionally large displacement field by structural modification of a model system: AB-stacked bilayer graphene (BLG) on a SiC(0001) surface. We show that upon intercalation of gadolinium, electronic states in the top graphene layers exhibit a significant difference in the on-site potential energy, which effectively breaks the interlayer coupling between them. As a result, for energies close to the corresponding Dirac points, the BLG system behaves like two electronically isolated single graphene layers. This is proven by local scanning tunneling microscopy (STM)/spectroscopy, corroborated by density functional theory, tight binding, and multiprobe STM transport. The work presents metal intercalation as a promising approach for the synthesis of 2D graphene heterostructures with electronic phases generated by giant displacement fields.

Molecular Doping of CVD-Graphene Surfaces by Perfluoroalkyl-Substituted Perylene Diimides Derivatives

Non-covalent π-π and dipolar interactions with small aromatic molecules have been widely demonstrated to be a valid option to tune graphene work functions without adding extrinsic scattering centers for charge carriers. In this work, we investigated the interaction between a CVD-graphene monolayer and a thermally evaporated sub-monolayer and the following few-layer thin films of similar perylene diimide derivatives: PDI8-CN2 and PDIF-CN2. The molecular influence on the graphene work function was estimated by XPS and UPS analysis and by investigating the surface potentials via scanning Kelvin probe force microscopy. The perfluorinated decoration and the steric interaction in the early stages of the film growth determined a positive work function shift as high as 0.7 eV in the case of PDIF-CN2, with respect to the value of 4.41 eV for the intrinsic graphene. Our results unambiguously highlight the absence of valence band shifts in the UPS analysis, indicating the prevalence of dipolar interactions between the graphene surface and the organic species enhanced by the presence of the fluorine-enriched moieties.

Resonantly Enhanced Electromigration Forces for Adsorbates on Graphene

We investigate the electromigration forces for weakly bonded adsorbates on graphene by using density-functional based calculations. We find that the nature of electromigration forces on an adsorbate critically depends on the energy level alignment between the adsorbate state and the Fermi level of the graphene. For a resonant adsorbate, whose frontier orbitals lie close to the Fermi level, the electromigration force is dominated by the electron wind force that is strongly enhanced along the electron flow direction, irrespective of the sign of the adsorbate charge. For a nonresonant adsorbate, the electromigration force is essentially the direct force that depends on the adsorbate charge. We also show that the magnitude of electromigration forces can be continuously tunable through electrostatic gating for resonant adsorbates. Our results provide new insight for understanding and controlling how nanoscale objects behave in or on host materials.

π-Orbital mediated charge transfer channels in a monolayer Gr-NiPc heterointerface unveiled by soft X-ray electron spectroscopies and DFT calculations

With the aim to identify charge transfer channels underlying device development and operation, X-Ray Photoelectron Spectroscopy (XPS), Near-Edge X-Ray Absorption Fine Structure (NEXAFS), and Resonant Photoelectron Spectroscopy (ResPES) have been employed to characterize a novel heterointerface obtained by the controlled evaporation of a Nickel Phthalocyanine (NiPc) monolayer on a single layer of Graphene (Gr) on SiC substrate. Indeed, the Gr-NiPc interface could be a promising candidate for different applications in the field of photonics, optoelectronics, and sensing, provided that clear information on the charge transfer mechanisms at the Gr-NiPc interface can be obtained. The analysis of the spectroscopic data has shown the effective functionalization and the horizontally-flat disposition of the NiPc complexes over the Gr layer. With this geometry, the main intermolecular interaction experienced by the NiPc species is the coupling with the Gr substrate, through π-symmetry orbitals, as revealed by the different behaviour of the valence band photoemission at resonance with the N K-edge and Ni L₃-edge. These results have been supported by the analysis of density functional theory (DFT) calculations, that allowed for a rationalization of the experimental data, showing that charge transfer at the interface occurs from the doubly degenerate e_g LUMO orbital, involving mainly N and C (pyrrole ring) p_z states, to the holes in the p-doped graphene layer.

Perfect Absorption of Fan-Shaped Graphene Absorbers with Good Adjustability in the Mid-Infrared

This paper presents a graphene metamaterial absorber based on impedance matching. A finite difference in time domain (FDTD) method is used to achieve a theoretically perfect absorption in the mid-infrared band. A basis is created for the multiband stable high absorption of graphene in the mid-infrared. The designed graphene absorber is composed of graphene, a dielectric layer, a gold plane, and a silicon substrate, separately. The incident source of mid-infrared can be utilized to stimulate multiband resonance absorption peaks from 2.55 to 4.15 μm. The simulation results show that the absorber has three perfect resonance peaks exceeding 99% at λ1 = 2.67 μm, λ2 = 2.87 μm, and λ3 = 3.68 μm, which achieve an absorption efficiency of 99.67%, 99.61%, and 99.40%, respectively. Furthermore, the absorber maintains an excellent performance with a wide incident angle range of 0°–45°, and it also keeps the insensitive characteristic to transverse electric wave (TE) and transverse magnetic wave (TM). The results above indicate that our perfect graphene absorber, with its tunability and wide adaptability, has many potential applications in the fields of biosensing, photodetection, and photocell.

Enhanced Magnetic Order and Reversed Magnetization Induced by Strong Antiferromagnetic Coupling at Hybrid Ferromagnetic-Organic Heterojunctions

Organic-molecular magnets based on a metal-organic framework with chemically tuned electronic and magnetic properties have been attracting tremendous attention due to their promising applications in molecular magnetic sensors, magnetic particle medicines, molecular spintronics, etc. Here, we investigated the magnetic behavior of a heterojunction comprising a ferromagnetic nickel (Ni) film and an organic semiconductor (OSC) 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) layer. Through the magneto-optical Kerr effect (MOKE), a photoemission electron microscopy (PEEM), X-ray magnetic circular dichroism (XMCD), and X-ray photoelectron spectroscopy (XPS), we found that the adsorption of F4-TCNQ on Cu(100)/Ni not only reverses the in-plane magnetization direction originally exhibited by the Ni layer but also results in enhanced magnetic ordering. Furthermore, the cyano group (CN) in adsorbed F4-TCNQ was found spin-polarized along with conspicuous charge transfer with Ni. The density functional theory (DFT) calculations suggest that the experimentally found spin polarization originates from hybridization between the CN group's π orbitals and Ni's d band. These findings signify that the hybrid states at the organic-ferromagnet interface play a key role in tailoring the magnetic behavior of interfaces. For the case of the F4-TCNQ and Ni heterojunction reported here, interface coupling is an antiferromagnetic one.

van der Waals Epitaxy of Organic Semiconductor Thin Films on Atomically Thin Graphene Templates for Optoelectronic Applications

ConspectusOrganic semiconductors (OSCs) offer unique advantages with respect to mechanical flexibility, low-cost processing, and tunable properties. The optical and electrical properties of devices based on OSCs can be greatly improved when an OSC is coupled with graphene in a certain manner. Our research group has focused on using graphene as a growth template for OSCs and incorporating such high-quality heterostructures into optoelectronic devices. The idea is that graphene's atomically flat surface with a uniform sp² carbon network can serve as a perfect quasi-epitaxial template for the growth of OSCs. In addition, OSC-graphene heterostructures benefit from graphene's unique characteristics, such as its high charge-carrier mobility, excellent optical transparency, and fascinating mechanical durability and flexibility.However, we have often found that OSC molecules assemble on graphene in unpredictable manners that vary from batch to batch. From observations of numerous research systems, we elucidated the mechanism underlying such poor repeatability and set out a framework to actually control the template effect of graphene on OSCs. In this Account, we not only present our scientific findings in this spectrum of areas but also convey our research scheme to the readers so that similar heterostructure complexes can be systematically studied.We began with experiments showing that the growth of OSCs on a graphene surface was driven by van der Waals interactions and is therefore sensitive to the cleanliness of the graphene surface. Nonetheless, we noted that, even on similarly clean graphene surfaces, the OSC thin film still varied with the underlying substrate. Thanks to the graphene-transfer method and in situ gating methods that we developed, we discovered that the decisive parameter for molecule-graphene interaction (and, hence, for the growth of OSCs on graphene) is the charge density in the graphene. Thus, to prepare a graphene template for high-quality graphene-OSC heterostructures, we controlled the charge density in the graphene to minimize the molecule-graphene interaction. Moreover, the possible charge transfer between OSC molecules and graphene, which induces additional molecule-graphene interactions, should also be taken into account. Eventually, we demonstrated a wide range of optoelectronic applications that benefitted from high-quality OSC-graphene heterostructures fabricated using our proof-of-concept systems.

Damage-Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO3 and LiF

To dope 2D semiconductor channels, charge-transfer doping has generally been done by thermal deposition of inorganic or organic thin-film layers on top of the 2D channel in bottom-gate field-effect transistors (FETs). The doping effects are reproducible in most cases. However, such thermal deposition will damage the surface of 2D channels due to the kinetic energy of depositing atoms, causing hysteresis or certain degradation. Here, a more desirable charge-transfer doping process is suggested. A damage-free charge-transfer doping is conducted for 2D MoTe₂ (or MoS₂ ) channels using a polydimethylsiloxane stamp. MoO₃ or LiF is initially deposited on the stamp as a doping medium. Hysteresis-minimized transfer characteristics are achieved from stamp-doped FETs, while other devices with direct thermal deposition-doped channels show large hysteresis. The stamping method seems to induce a van der Waals-like damage-free interface between the channel and doping media. The stamp-induced doping is also well applied for a MoTe₂ -based complementary inverter because MoO₃ - and LiF-doping by separate stamps effectively modifies two ambipolar MoTe₂ channels to p- and n-type, respectively.

The Synergistic Properties and Gas Sensing Performance of Functionalized Graphene-Based Sensors

The detection of toxic gases has long been a priority in industrial manufacturing, environmental monitoring, medical diagnosis, and national defense. The importance of gas sensing is not only of high benefit to such industries but also to the daily lives of people. Graphene-based gas sensors have elicited a lot of interest recently, due to the excellent physical properties of graphene and its derivatives, such as graphene oxide (GO) and reduced graphene oxide (rGO). Graphene oxide and rGO have been shown to offer large surface areas that extend their active sites for adsorbing gas molecules, thereby improving the sensitivity of the sensor. There are several literature reports on the promising functionalization of GO and rGO surfaces with metal oxide, for enhanced performance with regard to selectivity and sensitivity in gas sensing. These synthetic and functionalization methods provide the ideal combination/s required for enhanced gas sensors. In this review, the functionalization of graphene, synthesis of heterostructured nanohybrids, and the assessment of their collaborative performance towards gas-sensing applications are discussed.

Fano Resonance and Incoherent Interlayer Excitons in Molecular van der Waals Heterostructures

Complex van der Waals heterostructures from layered molecular stacks are promising optoelectronic materials offering the means to efficient, modular charge separation and collection layers. The effect of stacking in the electrodynamics of such hybrid organic-inorganic two-dimensional materials remains largely unexplored, whereby molecular scale engineering could lead to advanced optical phenomena. For instance, tunable Fano engineering could make possible on-demand transparent conducting layers or photoactive elements, and passive cooling. We employ an adapted Gersten-Nitzan model and real time time-dependent density functional tight-binding to study the optoelectronics of self-assembled monolayers on graphene nanoribbons. We find Fano resonances that cause electromagnetic induced opacity and transparency and reveal an additional incoherent process leading to interlayer exciton formation with a characteristic charge transfer rate. These results showcase hybrid van der Waals heterostructures as paradigmatic 2D optoelectronic stacks, featuring tunable Fano optics and unconventional charge transfer channels.

Tuning the carrier type and density of monolayer tin selenide via organic molecular doping

Utilizing first-principles calculations, charge transfer doping process of single layer tin selenide (SL-SnSe) via the surface adsorption of various organic molecules was investigated. Effective p-type SnSe, with carrier concentration exceeding 3.59 × 10¹³ cm^-2, was obtained upon adsorption of tetracyanoquinodimethane or 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane on SL-SnSe due to their lowest unoccupied molecular orbitals acting as shallow acceptor states. While we could not obtain effective n-type SnSe through adsorption of tetrathiafulvalene (TTF) or 1,4,5,8-tetrathianaphthalene on pristine SnSe due to their highest occupied molecular orbitals (HOMO) being far from the conduction band edge of SnSe, this disadvantageous situation can be amended by the introduction of an external electric field perpendicular to the monolayer surface. It is found that Sn_vacwill facilitate charge transfer from TTF to SnSe through introducing an unoccupied gap state just above the HOMO of TTF, thereby partially compensating for the p-type doping effect of Sn_vac. Our results show that both effective p-type and n-type SnSe can be obtained and tuned by charge transfer doping, which is necessary to promote its applications in nanoelectronics, thermoelectrics and optoelectronics.

Molecularly Engineered Black Phosphorus Heterostructures with Improved Ambient Stability and Enhanced Charge Carrier Mobility

Overcoming the intrinsic instability and preserving unique electronic properties are key challenges for the practical applications of black phosphorus (BP) under ambient conditions. Here, it is demonstrated that molecular heterostructures of BP and hexaazatriphenylene derivatives (BP/HATs) enable improved environmental stability and charge transport properties. The strong interfacial coupling and charge transfer between the HATs and the BP lattice decrease the surface electron density and protect BP sheets from oxidation, resulting in an excellent ambient lifetime of up to 21 d. Importantly, HATs increase the charge scattering time of BP, contributing to an improved carrier mobility of 97 cm2 V-1 s-1 , almost three times of the pristine BP films, based on noninvasive THz spectroscopic studies. The film mobility is an order of magnitude larger than previously reported values in exfoliated 2D materials. The strategy opens up new avenues for versatile applications of BP sheets and provides an effective method for tuning the physicochemical properties of other air-sensitive 2D semiconductors.

Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications

Two-dimensional materials (2DMs) have attracted tremendous research interest over the last two decades. Their unique optical, electronic, thermal, and mechanical properties make 2DMs key building blocks for the fabrication of novel complementary metal-oxide-semiconductor (CMOS) and beyond-CMOS devices. Major advances in device functionality and performance have been made by the covalent or noncovalent functionalization of 2DMs with molecules: while the molecular coating of metal electrodes and dielectrics allows for more efficient charge injection and transport through the 2DMs, the combination of dynamic molecular systems, capable to respond to external stimuli, with 2DMs makes it possible to generate hybrid systems possessing new properties by realizing stimuli-responsive functional devices and thereby enabling functional diversification in More-than-Moore technologies. In this review, we first introduce emerging 2DMs, various classes of (macro)molecules, and molecular switches and discuss their relevant properties. We then turn to 2DM/molecule hybrid systems and the various physical and chemical strategies used to synthesize them. Next, we discuss the use of molecules and assemblies thereof to boost the performance of 2D transistors for CMOS applications and to impart diverse functionalities in beyond-CMOS devices. Finally, we present the challenges, opportunities, and long-term perspectives in this technologically promising field.

Microsecond dynamics of molecular negative ions formed by low-energy electron attachment to fluorinated tetracyanoquinodimethane

Low-energy (0-15 eV) electron interactions with gas-phase 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) molecules are studied under single collision conditions using dissociative electron attachment spectroscopy. The experimental findings are supported by density functional theory calculations of the virtual orbital energies and energetics of the dissociative decays. Long-lived molecular negative ions F4-TCNQ^- are detected in a wide electron energy range (0-3 eV) with electron detachment times in the range of milliseconds. Although plenty of decay channels are observed, their intensities are found to be very small (two to four orders of magnitude relative to the F4-TCNQ^- signal). These findings prove that the structure of this strong electron-accepting molecule bearing an excess electron is robust in its electronic ground state, even when highly (up to 6 eV) vibrationally excited. As many as nine metastable fragment anions formed slowly (in the 16-23 µs range) are found in the negative ion mass spectrum of F4-TCNQ, as never observed before in compounds possessing high electron-accepting ability. The present results shed some light on microsecond dynamics of isolated F4-TCNQ molecules under conditions of excess negative charge, which are important for understanding the functionality of nanoscale devices containing this molecule as a structural element.

Molecular Dopant-Dependent Charge Transport in Surface-Charge-Transfer-Doped Tungsten Diselenide Field Effect Transistors

The controllability of carrier density and major carrier type of transition metal dichalcogenides(TMDCs) is critical for electronic and optoelectronic device applications. To utilize doping in TMDC devices, it is important to understand the role of dopants in charge transport properties of TMDCs. Here, the effects of molecular doping on the charge transport properties of tungsten diselenide (WSe₂ ) are investigated using three p-type molecular dopants, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F₄ -TCNQ), tris(4-bromophenyl)ammoniumyl hexachloroantimonate (magic blue), and molybdenum tris(1,2-bis(trifluoromethyl)ethane-1,2-dithiolene) (Mo(tfd-COCF₃ )₃ ). The temperature-dependent transport measurements show that the dopant counterions on WSe₂ surface can induce Coulomb scattering in WSe₂ channel and the degree of scattering is significantly dependent on the dopant. Furthermore, the quantitative analysis revealed that the amount of charge transfer between WSe₂ and dopants is related to not only doping density, but also the contribution of each dopant ion toward Coulomb scattering. The first-principles density functional theory calculations show that the amount of charge transfer is mainly determined by intrinsic properties of the dopant molecules such as relative frontier orbital positions and their spin configurations. The authors' systematic investigation of the charge transport of doped TMDCs will be directly relevant for pursuing molecular routes for efficient and controllable doping in TMDC nanoelectronic devices.

Imparting α-Borophene with High Work Function by Fluorine Adsorption: A First-Principles Investigation

Increasing the work function of borophene over a large range is crucial for the development of borophene-based anode materials for highly efficient electronic devices. In this study, the effect of fluorine adsorption on the structures and stabilities, particularly on the work function, of α-borophene (BBP), was systematically investigated via first-principles density functional theory. The calculations indicated that BBP was well-stabilized by fluorine adsorption and the work functions of metallic fluorine-adsorbed BBPs (F_n-BBPs) sharply increased with increasing fluorine content. Moreover, the work function of F-BBP was close to that of the frequently used anode material Au and even, for other F_n-BBPs, higher than that of Pt. Furthermore, we have comprehensively discussed the factors, including substrate deformation, charge transfer, induced dipole moment, and Fermi and vacuum energy levels, affecting the improvement of work function. Particularly, we have demonstrated that the charge redistribution of the substrate induced by the bonding interaction between fluorine and the matrix predominantly contributes to the observed increase in the work function. Additionally, the effect of fluorine adsorption on the increase in the work function of BBP was significantly stronger than that of silicene or graphene. Our results concretely support the fact that F_n-BBPs can be extremely attractive anode materials for electronic device applications.

Charge Transfer Screening and Energy Level Alignment at Complex Organic-Inorganic Interfaces: A Tractable Ab Initio GW Approach

Complex organic-inorganic interfaces are important for device and sensing applications. Charge transfer doping is prevalent in such applications and can affect the interfacial energy level alignments (ELA), which are determined by many-body interactions. We develop an approximate ab initio many-body GW approach that can capture many-body interactions due to interfacial charge transfer. The approach uses significantly less resources than a regular GW calculation but gives excellent agreement with benchmark GW calculations on an F4TCNQ/graphene interface. We find that many-body interactions due to charge transfer screening result in gate-tunable F4TCNQ HOMO-LUMO gaps. We further predict the ELA of a large system of experimental interest-4,4'-bis(dimethylamino)bipyridine (DMAP-OED) on monolayer MoS₂, where charge transfer screening results in an ∼1 eV reduction of the molecular HOMO-LUMO gap. Comparison with a two-dimensional electron gas model reveals the importance of explicitly considering the intraband transitions in determining the charge transfer screening in organic-inorganic interface systems.

Graphene-Based Hybrid Functional Materials

Graphene is a 2D material combining numerous outstanding physical properties, including high flexibility and strength, extremely high thermal conductivity and electron mobility, transparency, etc., which make it a unique testbed to explore fundamental physical phenomena. Such physical properties can be further tuned by combining graphene with other nanomaterials or (macro)molecules to form hybrid functional materials, which by design can display not only the properties of the individual components but also exhibit new properties and enhanced characteristics arising from the synergic interaction of the components. The implementation of the hybrid approach to graphene also allows boosting the performances in a multitude of technological applications. This review reports the hybrids formed by graphene combined with other low-dimensional nanomaterials of diverse dimensionality (0D, 1D, and 2D) and (macro)molecules, with emphasis on the synthetic methods. The most important applications of these hybrids in the fields of sensing, water purification, energy storage, biomedical, (photo)catalysis, and opto(electronics) are also reviewed, with a special focus on the superior performances of these hybrids compared to the individual, nonhybridized components.

Phosphomolybdic Acid-Modified Monolayer Graphene Anode for Efficient Organic and Perovskite Light-Emitting Diodes

Graphene is a promising flexible transparent electrode, and significant progress in graphene-based optoelectronic devices has been accomplished by reducing the sheet resistance and tuning the work function. Herein, phosphomolybdic acid (PMA) is proposed as a novel p-type chemical dopant for graphene, and the optical and electrical properties of graphene are investigated systematically. As a result, the monolayer graphene electrode with lower sheet resistance and work function are obtained while maintaining a high transmittance. The Raman spectrum proves the p-type doping effect of PMA on graphene, and the X-ray photoelectron spectroscopy results reveal the mechanism, which is that the electrons transfer from graphene to PMA through the Mo-O-C bond. Furthermore, using the PMA-doped graphene anode, organic and perovskite light-emitting diodes obtained the maximum efficiencies of 129.3 and 15.6 cd/A with an increase of 50.8 and 36.8% compared with the pristine counterparts, respectively. This work confirms that PMA is a potential p-type chemical dopant to achieve an ideal graphene electrode and demonstrates the feasibility of PMA-doped graphene in the practical application of next-generation displays and solid-state lighting.

N-type and p-type molecular doping on monolayer MoS2

Monolayer MoS2 has attracted much attention due to its high on/off current ratio, transparency, and suitability for optoelectronic devices. Surface doping by molecular adsorption has proven to be an effective method to facilitate the usage of MoS2. However, there are no works available to systematically clarify the effects of the adsorption of F4TCNQ, PTCDA, and tetracene on the electronic and optical properties of the material. Therefore, this work elucidated the problem by using density functional theory calculations. We found that the adsorption of F4TCNQ and PTCDA turns MoS2 into a p-type semiconductor, while the tetracene converts MoS2 into an n-type semiconductor. The occurrence of a new energy level in the conduction band for F4TCNQ and PTCDA and the valence band for tetracene reduces the bandgap of the monolayer MoS2. Besides, the MoS2/F4TCNQ and MoS2/PTCDA systems exhibit an auxiliary optical peak at the long wavelengths of 950 and 850 nm, respectively. Contrastingly, the MoS2/tetracene modifies the optical spectrum of the monolayer MoS2 only in the ultraviolet region. The findings are in good agreement with the experiments.

Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors

One of the main limiting factors in the performance of devices based on two-dimensional (2D) materials is Fermi level pinning at the contacts, which creates Schottky barriers (SBs) that increase contact resistance and, for most transition metal dichalcogenides (TMDs), limit hole conduction. A promising method to mitigate these problems is surface charge transfer doping (SCTD), which places fixed charge at the surface of the material and thins the SBs by locally shifting the energy bands. We use a mild O₂ plasma to convert the top few layers of a given TMD into a substoichiometric oxide that serves as a p-type SCTD layer. A comprehensive experimental study, backed by TCAD simulations, involving MoS₂, MoSe₂, MoTe₂, WS₂, and WSe₂ flakes of various thicknesses exposed to different plasma times is used to investigate the underlying mechanisms responsible for SCTD. The surface charge at the top of the channel and the gate-modulated surface potential at the bottom are found to have competing effects on the channel potential, which results in a decrease in the doping-induced threshold shift and an increase in minimum OFF state current with increasing thickness. Additionally, an undoped channel region is shown to mitigate carrier injection issues in sufficiently thin flakes. Notably, the band movements underlying the SCTD effects are independent of the particular semiconductor material, SCTD strategy, and doping polarity. Consequently, our findings provide critical insights for the design of high-performance transistors for a wide range of materials and SCTD mechanisms including TMD devices with strong hole conduction.

Modulating the Electronic, Optical, and Transport Properties of CdTe and ZnTe Nanostructures with Organic Molecules: A Theoretical Investigation

In this paper, we systematically investigated the electronic, optical, and transport properties of CdTe and ZnTe nanostructures before and after adsorption with benzyl viologen (BV) and tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) organic molecules based on the first principles calculation. First, the band gaps of CdTe and ZnTe nanostructures obviously decrease after BV and F4-TCNQ adsorptions. Interestingly, the electronic property calculation shows that BV and F4-TCNQ can donate/accept electrons to/from the surface of CdTe and ZnTe nanostructures, leading to an effective n-/p-type doping, respectively. Second, the optical absorption in a broad spectral range (from visible to near-infrared) of CdTe and ZnTe is significantly improved by adsorption of BV and F4-TCNQ molecules, offering great opportunities for the use of CdTe and ZnTe nanostructures in renewable energy fields. Lastly, the electrical transfer characteristics on CdTe and ZnTe nanostructure-based field-effect transistors clearly showed that the conduction of the nanostructures can be rationally tuned into n- and p-type conductivity with BV and F4-TCNQ adsorptions, respectively. Our work clearly demonstrates that the electronic, optical, and transport properties of CdTe and ZnTe nanostructures are effectively modulated by adsorption of BV and F4-TCNQ, which can be used to construct high-performance electronic and optoelectronic devices.

Graphene-diamond junction photoemission microscopy and electronic interactions

Polycrystalline graphene was transferred onto differently terminated epitaxial layers of boron-doped diamond deposited onto single crystal substrates. Chemical and electronic characterisation was performed using energy-filtered photoemission electron microscopy and angle-resolved photoemission spectroscopy. Electronic interaction between the diamond and graphene was observed, where doping of the graphene on the hydrogen and oxygen terminated diamond was n-doping of 250 meV and 0 meV respectively. We found that the wide window of achievable graphene doping is effectively determined by the diamond surface dipole, easily tuneable with a varying surface functionalisation. A Schottky junction using the graphene-diamond structure was clearly observed and shown to reduce downward band bending of the hydrogen terminated diamond, producing a Schottky barrier height of 330 meV.

Low-Power Complementary Logic Circuit Using Polymer-Electrolyte-Gated Graphene Switching Devices

The modulation of the electrical properties of graphene and its device configurations for low-power consumption are important in developing graphene-based logic electronics. Here, we demonstrate the change in the charge transport in graphene from ambipolar to unipolar using surface charge transfer doping of the polymer electrolyte. Unipolar graphene field-effect transistors (GFETs) were obtained by the surface treatment of poly(acrylic acid) (PAA) for p-type and poly(ethyleneimine) (PEI) for n-type as polymer-electrolyte gates. In addition, lithium perchlorate (LiClO₄) in a polymer matrix can be used for the low-gate voltage operation of GFETs (less than ±3 V) because of its high gating efficiency. Using polymer-electrolyte-gated GFETs, complementary graphene inverters were fabricated with a voltage swing of 57% and maximum voltage gain (V_gain) of 1.1 at a low supply voltage (V_DD = 1 V). This is expected to facilitate the development of graphene-based logic devices with low-cost, low-power, and flexible electronics.

Borophosphene: A New Anisotropic Dirac Cone Monolayer with a High Fermi Velocity and a Unique Self-Doping Feature

Two-dimensional (2D) Dirac cone materials exhibit linear energy dispersion at the Fermi level, where the effective masses of carriers are very close to zero and the Fermi velocity is ultrahigh, only 2-3 orders of magnitude lower than the light velocity. Such Dirac cone materials have great promise in high-performance electronic devices. Herein, we have employed the genetic algorithm methods combined with first-principles calculations to propose a new 2D anisotropic Dirac cone material, an orthorhombic boron phosphide (BP) monolayer named borophosphene. Molecular dynamics simulation and phonon dispersion have been used to evaluate the dynamic and thermal stability of borophosphene. Because of the unique arrangements of B-B and P-P dimers, the mechanical and electronic properties are highly anisotropic. Of great interest is the fact that the Dirac cone of the borophosphene is robust, independent of in-plane biaxial and uniaxial strains, and can also be observed in its one-dimensional zigzag nanoribbons and armchair nanotubes. The Fermi velocities are ∼10⁵ m/s, on the same order of magnitude as that of graphene. By using a tight-binding model, the origin of the Dirac cone of borophosphene is analyzed. Moreover, a unique feature of self-doping can be induced by the in-plane biaxial and uniaxial strains of borophosphene and the curvature effect of nanotubes, which is greatly beneficial for realizing high-speed carriers (holes). Our results suggest that the borophosphene holds great promise for high-performance electronic devices, which could promote experimental and theoretical studies for further exploring the potential applications of other 2D Dirac cone sheets.

Manifestation of Kinetic Inductance in Terahertz Plasmon Resonances in Thin-Film Cd3As2

Three-dimensional (3D) semimetals have been predicted and demonstrated to have a wide variety of interesting properties associated with their linear energy dispersion. In analogy to two-dimensional (2D) Dirac semimetals, such as graphene, Cd₃As₂ has shown ultrahigh mobility and large Fermi velocity and has been hypothesized to support plasmons at terahertz frequencies. In this work, we experimentally demonstrate synthesis of high-quality large-area Cd₃As₂ thin films through thermal evaporation as well as the experimental realization of plasmonic structures consisting of periodic arrays of Cd₃As₂ stripes. These arrays exhibit sharp resonances at terahertz frequencies with associated quality factors ( Q) as high as ∼3.7 (at 0.82 THz). Such spectrally narrow resonances can be understood on the basis of a long momentum scattering time, which in our films can approach ∼1 ps at room temperature. Moreover, we demonstrate an ultrafast tunable response through excitation of photoinduced carriers in optical pump/terahertz probe experiments. Our results evidence that the intrinsic 3D nature of Cd₃As₂ might provide for a very robust platform for terahertz plasmonic applications. Moreover, the long momentum scattering time as well as large kinetic inductance in Cd₃As₂ also holds enormous potential for the redesign of passive elements such as inductors and hence can have a profound impact in the field of RF integrated circuits.

Electrochemical methods for probing DNA damage mechanisms and designing cisplatin-based combination chemotherapy

An electrochemical approach was devised for detecting DNA damage and differentiating two DNA damage mechanisms, which is important to the design of new chemotherapeutics. This approach combined two platforms, based on the detection of base damage and DNA strand cleavage. In this work, our approach was demonstrated for the detection of cisplatin-induced DNA damage and the enhancement effects of two electron donors, N,N,N′,N′-tetramethyl-p-phenylenediamine (TMPD) and reduced graphene oxide (rGO). Our results demonstrated that TMPD enhanced DNA strand cleavage, supporting the proposed dissociative electron transfer mechanism. While rGO, which is an efficient electron donor, failed to show any enhancement (suggesting the lack of free-radical generation), overall, this electrochemical approach could be implemented for discovering next-generation DNA damage-based chemotherapy drugs.

Graphene/Si Schottky solar cells: a review of recent advances and prospects

Graphene has attracted tremendous interest due to its unique physical and chemical properties. The atomic thickness, high carrier mobility and transparency make graphene an ideal electrode material which can be applied to various optoelectronic devices such as solar cells, light-emitting diodes and photodetectors. In recent years, there has been a growing interest in developing graphene/silicon Schottky junction solar cells and the power conversion efficiency has reached up to 15.8% with an incredible speed. In this review, we introduce the structure and mechanism of graphene/silicon solar cells briefly, and then summarize several key strategies to improve the performance of the cells. Finally, the challenges and prospects of graphene/silicon solar cells are discussed in the development of the devices in detail.

The structure and mechanism of graphene/silicon solar cells, and several key strategies to improve the performance of the cells.

Transparent Conductive Electrodes Based on Graphene-Related Materials

Transparent conducting electrodes (TCEs) are the most important key component in photovoltaic and display technology. In particular, graphene has been considered as a viable substitute for indium tin oxide (ITO) due to its optical transparency, excellent electrical conductivity, and chemical stability. The outstanding mechanical strength of graphene also provides an opportunity to apply it as a flexible electrode in wearable electronic devices. At the early stage of the development, TCE films that were produced only with graphene or graphene oxide (GO) were mainly reported. However, since then, the hybrid structure of graphene or GO mixed with other TCE materials has been investigated to further improve TCE performance by complementing the shortcomings of each material. This review provides a summary of the fabrication technology and the performance of various TCE films prepared with graphene-related materials, including graphene that is grown by chemical vapor deposition (CVD) and GO or reduced GO (rGO) dispersed solution and their composite with other TCE materials, such as carbon nanotubes, metal nanowires, and other conductive organic/inorganic material. Finally, several representative applications of the graphene-based TCE films are introduced, including solar cells, organic light-emitting diodes (OLEDs), and electrochromic devices.

Graphene catalyzes the reversible formation of a C-C bond between two molecules

Carbon deposits are well-known inhibitors of transition metal catalysts. In contrast to this undesirable behavior, here we show that epitaxial graphene grown on Ru(0001) promotes the reversible formation of a C-C bond between -CH₂CN and 7,7,8,8-tetracyano-p-quinodimethane (TCNQ). The catalytic role of graphene is multifaceted: First, it allows for an efficient charge transfer between the surface and the reactants, thus favoring changes in carbon hybridization; second, it holds the reactants in place and makes them reactive. The reaction is fully reversible by injecting electrons with an STM tip on the empty molecular orbitals of the product. The making and breaking of the C-C bond is accompanied by the switching off and on of a Kondo resonance, so that the system can be viewed as a reversible magnetic switch controlled by a chemical reaction.

Quantitative determination of a model organic/insulator/metal interface structure

By combining X-ray photoelectron spectroscopy, X-ray standing waves and scanning tunneling microscopy, we investigate the geometric and electronic structure of a prototypical organic/insulator/metal interface, namely cobalt porphine on monolayer hexagonal boron nitride (h-BN) on Cu(111). Specifically, we determine the adsorption height of the organic molecule and show that the original planar molecular conformation is preserved in contrast to the adsorption on Cu(111). In addition, we highlight the electronic decoupling provided by the h-BN spacer layer and find that the h-BN-metal separation is not significantly modified by the molecular adsorption. Finally, we find indication of a temperature dependence of the adsorption height, which might be a signature of strongly-anisotropic thermal vibrations of the weakly bonded molecules.

The relationship between the coherent size, binding energy and dissociation dynamics of charge transfer excitons at organic interfaces

At organic semiconductor interfaces, an electron and a hole can be bound Coulombically to form an interfacial charge transfer (CT) exciton. It is still under debate how a CT exciton can overcome its strong binding and dissociate into free carriers. Experimentally, capturing the evolution of the CT exciton on time (fs-ps) and length scales (nm) in which the dissociation process occurs is challenging. To overcome this challenge, time-resolved two photon photoemission spectroscopy is used to measure the binding energies and electronic coherent sizes of a series of CT states at organic interfaces, and capture the temporal dynamics of these CT excitons after their excitation. Using zinc phthalocyanine (ZnPc)/fullerene (C₆₀) interface as a model system, it is shown that the interfacial CT process first populates a hot CT state with a coherent size of ~4 nm. Hot and delocalized CT excitons subsequently relax into CT excitons with lower energies and smaller coherent sizes. To correlate the CT exciton properties with the dissociation efficiency, we develop a method that exploits graphene field effect transistors to probe the rate and yield of free carrier generation at the interface. Our results show that exciton dissociation can be more efficient if one can extract electrons from the hot and delocalized CT state. We propose a cascade structure that would serve this purpose.

Uniform doping of graphene close to the Dirac point by polymer-assisted assembly of molecular dopants

Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals, which can lead to ordered molecular arrays. However, such systems, demonstrated in ultra-high vacuum conditions (UHV), are often unstable in ambient conditions. Here we show that air-stable doping of epitaxial graphene on SiC—achieved by spin-coating deposition of 2,3,5,6-tetrafluoro-tetracyano-quino-dimethane (F4TCNQ) incorporated in poly(methyl-methacrylate)—proceeds via the spontaneous accumulation of dopants at the graphene-polymer interface and by the formation of a charge-transfer complex that yields low-disorder, charge-neutral, large-area graphene with carrier mobilities ~70 000 cm² V⁻¹ s⁻¹ at cryogenic temperatures. The assembly of dopants on 2D materials assisted by a polymer matrix, demonstrated by spin-coating wafer-scale substrates in ambient conditions, opens up a scalable technological route toward expanding the functionality of 2D materials.

Incorporating dopants in the graphene lattice to tune its electronic properties is a challenging task. Here, the authors report a strategy to dope epitaxial large-area graphene on SiC by means of spin-coating deposition of F4TCNQ polymers in ambient conditions.

Energy Level Evolution and Oxygen Exposure of Fullerene/Black Phosphorus Interface

The heteroepitaxial growth of fullerene (C₆₀) on single-crystal black phosphorus (BP) has been studied using low-energy electron diffraction, X-ray and ultraviolet photoelectron spectroscopy, and density functional theory simulation. The occupied orbital features from C₆₀ observed in the photoelectron spectra for C₆₀/BP interface are slightly broadened at higher coverages of C₆₀ and exhibit no direct evidence of hybridization, demonstrating that the C₆₀/BP interaction is physisorption. Oxygen exposure of interface leads to obvious oxidation of BP in which C₆₀ bridges the large electron-transfer barrier from BP to oxygen and plays an important role for the production of O₂^- and oxidation of BP. Our findings suggest that C₆₀ does not form an ideal protection layer as the other n-type semiconductors. With the assistance of density functional theory calculations, the oxidized phosphorus at the interface prevents further charge transfer from BP to C₆₀.