Solution Synthesis of Large-Scale, High-Sensitivity ZnO/Si Hierarchical Nanoheterostructure Photodetectors

Enhanced-Performance Self-Powered Solar-Blind UV-C Photodetector Based on n-ZnO Quantum Dots Functionalized by p-CuO Micro-pyramids

Smart solar-blind UV-C band photodetectors suffer from low responsivity in a self-powered mode. Here, we address this issue by fabricating a novel enhanced solar-blind UV-C photodetector array based on solution-processed n-ZnO quantum dots (QDs) functionalized by p-CuO micro-pyramids. Self-assembled catalyst-free p-CuO micro-pyramid arrays are fabricated on a pre-ablated Si substrate by pulsed laser deposition without a need for a catalyst layer or seeding, while the solution-processed n-ZnO QDs are synthesized by the femtosecond-laser ablation in liquid technique. The photodetector is fabricated by spray-coating ZnO QDs on a CuO micro-pyramid array. The photodetector performance is optimized via a p-n junction structure as both p-ZnO QDs and p-CuO micro-pyramid layers are characterized by wide band gap energies. Two photodetectors (with and without CuO micro-pyramids) are fabricated to show the role of p-CuO in enhancing the device performance. The n-ZnO QD/p-CuO micro-pyramid/Si photodetector is characterized by a superior photo-responsivity of ∼956 mA/W at 244 nm with a faster photoresponse (<80 ms) and 260 nm cut-off compared to ZnO QDs/Si photodetectors, confirming that the p-CuO micro-pyramids enhance the device performance. The self-powered photoresponse with a high photo-responsivity of ∼29 mA/W is demonstrated. These high-responsivity solar-bind UV-C photodetector arrays can be used for a wide range of applications.

An Efficient Strategy for the Fabrication of CuS as a Highly Excellent and Recyclable Photocatalyst for the Degradation of Organic Dyes

An effective and practical in situ sulfuration approach has been developed in this work, for the fabrication of CuS with a 3D hierarchical network structure under mild preparation conditions. The prepared CuS consists of a primary structure of the multi-structure interchange copper foam precursor, and a secondary structure of nanoplates. The structural characteristics, morphologies, and photocatalytic performances of the prepared photocatalyst were investigated systematically. To evaluate the photocatalytic performance of the prepared CuS samples, we investigated the degradation of MB (methylene blue), RhB (Rhodamine B), and MB/RhB dye solutions over the samples under the irradiation of simulated solar light. Specifically, the degradation of RhB rapidly reached ≈100.0% after simulated solar light irradiation for 25 min, which is higher than those of P25 (83.0%) and bulk CuS (54.8%). For the mixed systems of MB/RhB, both the degradations of MB and RhB reached up to ≈99.0% after simulated solar light irradiation for 25 min. The superior photocatalytic performances of the prepared samples are attributed to the synergistic effects of high optical absorption, large specific surface area, and abundant active sites. The prepared catalysts can retain the photocatalytic activities during the entire reaction process without significant loss after four catalytic cycles, which reveals that the CuS with a stable 3D hierarchical network structure has a promising prospect as an ideal recyclable catalyst.

La- and Mn-Codoped Bismuth Ferrite/Ti3C2 MXene Composites for Efficient Photocatalytic Degradation of Congo Red Dye

Over the years, scarcity of fresh potable water has increased the demand for clean water. Meanwhile, with the advent of nanotechnology, the use of nanomaterials for photocatalytic degradation of pollutants in wastewaters has increased. Herein, a new type of nanohybrids of La- and Mn-codoped bismuth ferrite (BFO) nanoparticles embedded into transition-metal carbide sheets (MXene-Ti₃C₂) were prepared by a low-cost double-solvent sol-gel method and investigated for their catalytic activity in dark and photoinduced conditions. The photoluminescence results showed that pure BFO has the highest electron hole recombination rate as compared to all the codoped BFO/Ti₃C₂ nanohybrids. The higher electron-hole pair generation rate of the nanohybrids provides a suitable environment for fast degradation of organic dye molecules. The band gap of the prepared nanohybrid was tuned to 1.73 eV. Moreover, the BLFO/Ti₃C₂ and BLFMO-5/Ti₃C₂ degraded 92 and 93% of the organic pollutant, respectively, from water in dark and remaining in the light spectrum. Therefore, these synthesized nanohybrids could be a promising candidate for catalytic and photocatalytic applications in future.

ZnO nanorod arrays grown on g-C3N4 micro-sheets for enhanced visible light photocatalytic H2 evolution

The designed synthesis of noble-metal-free photocatalysts with hierarchical heteroassemblies in a facile, mild and eco-friendly way becomes more and more important, because we can explore the novel properties and applications of novel heterostructures via this method. Herein we report a two-step aqueous strategy for novel hierarchical heterostructures of ZnO nanorod (NR) arrays grown on graphitic carbon nitride (g-C₃N₄). The novel g-C₃N₄/ZnO NR heterostructures that integrate g-C₃N₄ and ZnO NR via high-quality g-C₃N₄–ZnO heterojunctions have beneficial properties such as high specific surface area (SSA), open spatial architecture, good electronic conductivity, and effective charge transfer interfaces, and are promising in many related areas such as water splitting, solar cells, etc. As a noble-metal-free and visible-light-responsive photocatalytic material, a typical g-C₃N₄/ZnO NR photocatalytic system exhibits enhanced photocatalytic activity toward H₂ evolution, almost 3.5 times higher than that of pure g-C₃N₄. The superior photocatalytic property can be ascribed to the synergistic effect of the unique g-C₃N₄/ZnO NR heterostructures.

The designed synthesis of photocatalysts with hierarchical heteroassemblies in a facile, mild and eco-friendly way becomes more and more important, since we can explore the novel properties and applications of novel heterostructures via this method.

Synthesis of ZnO/Si Hierarchical Nanowire Arrays for Photocatalyst Application

ZnO/Si nanowire arrays with hierarchical architecture were synthesized by solution method with ZnO seed layer grown by atomic layer deposition and magnetron sputtering, respectively. The photocatalytic activity of the as-grown tree-like arrays was evaluated by the degradation of methylene blue under ultraviolet light at ambient temperature. The comparison of morphology, crystal structure, optical properties, and photocatalysis efficiency of the two samples in different seeding processes was conducted. It was found that the ZnO/Si nanowire arrays presented a larger surface area with better crystalline and more uniform ZnO branches on the whole sidewall of Si backbones for the seed layer by atomic layer deposition, which gained a strong light absorption as high as 98% in the ultraviolet and visible range. The samples were proven to have a potential use in photocatalyst, but suffered from photodissolution and memory effect. The mechanism of the photocatalysis was analyzed, and the stability and recycling ability were also evaluated and enhanced.

Self-Powered Nanoscale Photodetectors

Novel self-powered nanoscale photodetectors that can work without an external power source, which have great application potential in next-generation nanodevices that operate wirelessly and independently, are being widely studied. This review aims to give a comprehensive summary of the state-of-the-art research results on self-powered nanoscale photodetectors. An introduction of recent progress on Schottky junction photodetectors is provided. Two types of Schottky junctions are discussed in detail: metal-semiconductor and semiconductor-graphene junctions. Next, recent developments of p-n junction photodetectors are highlighted, including homojunction and heterojunction photodetectors. Then, piezo-phototronic effect enhanced photodetection performances of Schottky junctions and p-n junctions are discussed. Then, significant results on the photoelectrochemical-cell-based photodetector and integrated self-powered nanosystem are presented, followed by a systematic comparison of different types of photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. The hope is that this review can provide valuable insights into the current status of self-powered photodetectors and spur new structure and device designs to further enhance photodetection performance.

A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current-voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W^-1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.

Hedgehog-Like Upconversion Crystals: Controlled Growth and Molecular Sensing at Single-Particle Level

Topological control of nanostructures plays a crucial role in understanding the crystal growth process at the nanometer length scale. Here, the scalable synthesis of upconversion materials with distinct hedgehog-like morphologies by a seed-mediated synthetic procedure is reported. It is demonstrated that a close match in the crystal lattice between the core and shell components is essential for synthesizing such hierarchical nanostructures. These optical nanomaterials also enable the development of a single-particle-based platform for high-sensitivity molecular sensing.

Largely Improved Near-Infrared Silicon-Photosensing by the Piezo-Phototronic Effect

Although silicon (Si) devices are the backbone of modern (opto-)electronics, infrared Si-photosensing suffers from low-efficiency due to its limitation in light-absorption. Here, we demonstrate a large improvement in the performance, equivalent to a 366-fold enhancement in photoresponsivity, of a Si-based near-infrared (NIR) photodetector (PD) by introducing the piezo-phototronic effect via a deposited CdS layer. By externally applying a -0.15‰ compressive strain to the heterojunction, carrier-dynamics modulation at the local junction can be induced by the piezoelectric polarization, and the photoresponsivity and detectivity of the PD exhibit an enhancement of two orders of magnitude, with the peak values up to 19.4 A/W and 1.8 × 10¹² cm Hz^1/2/W, respectively. The obtained maximum responsivity is considerably larger than those of commercial Si and InGaAs PDs in the NIR waveband. Meanwhile, the rise time and fall time are reduced by 84.6% and 76.1% under the external compressive strain. This work provides a cost-effective approach to achieve high-performance NIR photosensing by the piezo-phototronic effect for high-integration Si-based optoelectronic systems.

Ultrasensitive Vertical Piezotronic Transistor Based on ZnO Twin Nanoplatelet

High sensitivity of pressure/strain sensors is the key to accurately evaluating external mechanical stimuli and could become more important in future generations of human-machine interfaces and artificial skin. Here we report the study of a two-terminal piezotronic transistor based on ZnO twin nanoplatelets (TNPT). Owing to the mirror symmetrical structure of ZnO twin nanplatelet, compressive pressure-induced positive piezoelectric polarization charges created at both metal-semiconductor interfaces can simultaneously lower both Schottky barrier heights and thus significantly modulate the carrier transport. Our device exhibits the highest pressure sensitivity of 1448.08-1677.53 meV/MPa, which is more than ∼20 times larger than the highest value reported previously, and a fast response time of <5 ms. In addition, it can be used as a photodector with an ultrahigh external photoresponsivity of ∼1.45 × 10⁴ AW^-1, which is ∼10⁵ times larger in magnitude than that of commercial UV photodetectors. The coupling between the mirror symmetrical structure and strong piezotronic effect in ZnO twin nanoplatelets may enable the development of ultrasensitive pressure/strain sensors for various applications such as artificial skin, health monitoring, and adaptive biomedical probes.

An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

The Gadolinium (Gd3+) and Tin (Sn4+) Co-doped BiFeO3 Nanoparticles as New Solar Light Active Photocatalyst

The process of photocatalysis is appealing to huge interest motivated by the great promise of addressing current energy and environmental issues through converting solar light directly into chemical energy. However, an efficient solar energy harvesting for photocatalysis remains a critical challenge. Here, we reported a new full solar spectrum driven photocatalyst by co-doping of Gd³⁺ and Sn⁴⁺ into A and B-sites of BiFeO₃ simultaneously. The co-doping of Gd³⁺ and Sn⁴⁺ played a key role in hampering the recombination of electron-hole pairs and shifted the band-gap of BiFeO₃ from 2.10 eV to 2.03 eV. The Brunauer-Emmett-Teller (BET) measurement confirmed that the co-doping of Gd³⁺ and Sn⁴⁺ into BiFeO₃ increased the surface area and porosity, and thus the photocatalytic activity of the Bi_0.90Gd_0.10Fe_0.95Sn_0.05O₃ system was significantly improved. Our work proposed a new photocatalyst that could degrade various organic dyes like Congo red, Methylene blue, and Methyl violet under irradiation with different light wavelengths and gave guidance for designing more efficient photocatalysts.

Three-dimensional nano-heterojunction networks: a highly performing structure for fast visible-blind UV photodetectors

Visible-blind ultraviolet photodetectors are a promising emerging technology for the development of wide bandgap optoelectronic devices with greatly reduced power consumption and size requirements. A standing challenge is to improve the slow response time of these nanostructured devices. Here, we present a three-dimensional nanoscale heterojunction architecture for fast-responsive visible-blind UV photodetectors. The device layout consists of p-type NiO clusters densely packed on the surface of an ultraporous network of electron-depleted n-type ZnO nanoparticles. This 3D structure can detect very low UV light densities while operating with a near-zero power consumption of ca. 4 × 10^-11 watts and a low bias of 0.2 mV. Most notably, heterojunction formation decreases the device rise and decay times by 26 and 20 times, respectively. These drastic enhancements in photoresponse dynamics are attributed to the stronger surface band bending and improved electron-hole separation of the nanoscale NiO/ZnO interface. These findings demonstrate a superior structural design and a simple, low-cost CMOS-compatible process for the engineering of high-performance wearable photodetectors.

Ultrafast Response p-Si/n-ZnO Heterojunction Ultraviolet Detector Based on Pyro-Phototronic Effect

A light-self-induced pyro-phototronic effect in wurtzite ZnO nanowires is proposed as an effective approach to achieve ultrafast response ultraviolet sensing in p-Si/n-ZnO heterostructures. The relatively long response/recovery time of zinc-oxide-based ultraviolet sensors in air/vacuum has long been an obstacle to developing such detectors for practical applications. The response/recovery time and photoresponsivity are greatly improved by the pyro-phototronic effect.

Consecutive Reaction to Construct Hierarchical Nanocrystalline CuS "Branch" with Tunable Catalysis Properties

New CuS nanocrystals with a 3D hierarchical branched structure are successfully synthesized through in situ consecutive reaction method with copper foam as template. The formation mechanism of the 3D hierarchical branched structure obtained from the secondary reaction is investigated by adjusting the reaction time. The morphology of CuS nanosheet arrays with the 3D hierarchical branched structure is changed through Cu(2+) exchange. In this method, the copper foam reacted completely, and the as-synthesized CuS@Cu9S5 nanocrystals are firmly grown on the surface of the 3D framework. This tunable morphology significantly influence the physical and chemical properties, particularly catalytic performance, of the materials. The as-obtained material of Cu@CuS-2 with the 3D hierarchical branched structure as catalyst for methylene blue degradation exhibits good catalytic performance than that of the material of Cu@CuS with 2D nanosheets in dark environment. Furthermore, the cation exchange between Cu and Cu(2+) indicates that Cu(2+) in wastewater could be absorbed by Cu@CuS-2 with the 3D hierarchical branched structure. The exchanged resultant of CuS@Cu9S5 retains its capability to degrade organic dyes. This in situ consecutive reaction method may have a significant impact on controlling the crystal growth direction of inorganic material.

Hierarchically branched Fe2O3@TiO2 nanorod arrays for photoelectrochemical water splitting: facile synthesis and enhanced photoelectrochemical performance

Highly photoactive and durable photoanode materials are the key to photoelectrochemical water splitting. In this paper, hierarchically branched Fe2O3@TiO2 nanorod arrays (denoted as Fe2O3@TiO2 BNRs) composed of a long Fe2O3 trunk and numerous short TiO2 nanorod branches were fabricated and used as photoanodes for water splitting. Significant improvement of photoelectrochemical water splitting performance was observed based on Fe2O3@TiO2 BNRs. The photocurrent density of Fe2O3@TiO2 BNRs reaches up to 1.3 mA cm(-2) at 1.23 V versus RHE, which is 10 times higher than that of pristine Fe2O3 nanorod arrays under the same conditions. Furthermore, an obvious cathodic shift in the onset potential of photocurrent was observed in the Fe2O3@TiO2 BNRs. More significantly, the Fe2O3@TiO2 BNRs are quite stable even after 3600 s continuous illumination, and the photocurrent density shows almost no decay. Finally, a tentative mechanism was proposed to explain the superior performance of Fe2O3@TiO2 BNRs for PEC water splitting and discussed in detail on the basis of our experimental results.

Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures

In this work, we demonstrate a new strategy to create WZ-GaN/3C-SiC heterostructure nanowires, which feature controllable morphologies. The latter is realized by exploiting the stacking faults in 3C-SiC as preferential nucleation sites for the growth of WZ-GaN. Initially, cubic SiC nanowires with an average diameter of ∼100 nm, which display periodic stacking fault sections, are synthesized in a chemical vapor deposition (CVD) process to serve as the core of the heterostructure. Subsequently, hexagonal wurtzite-type GaN shells with different shapes are grown on the surface of 3C-SiC wire core. In this context, it is possible to obtain two types of WZ-GaN/3C-SiC heterostructure nanowires by means of carefully controlling the corresponding CVD reactions. Here, the stacking faults, initially formed in 3C-SiC nanowires, play a key role in guiding the epitaxial growth of WZ-GaN as they represent surface areas of the 3C-SiC nanowires that feature a higher surface energy. A dedicated structural analysis of the interfacial region by means of high-resolution transmission electron microscopy (HRTEM) revealed that the disordering of the atom arrangements in the SiC defect area promotes a lattice-matching with respect to the WZ-GaN phase, which results in a preferential nucleation. All WZ-GaN crystal domains exhibit an epitaxial growth on 3C-SiC featuring a crystallographic relationship of [12̅10](WZ-GaN) //[011̅](3C-SiC), (0001)(WZ-GaN)//(111)(3C-SiC), and d(WZ-GaN(0001)) ≈ 2d(3C-SiC(111)). The approach to utilize structural defects of a nanowire core to induce a preferential nucleation of foreign shells generally opens up a number of opportunities for the epitaxial growth of a wide range of semiconductor nanostructures which are otherwise impossible to acquire. Consequently, this concept possesses tremendous potential for the applications of semiconductor heterostructures in various fields such as optics, electrics, electronics, and photocatalysis for energy harvesting and environment processing.

Influence of Exciton Localization on the Emission and Ultraviolet Photoresponse of ZnO/ZnS Core-Shell Nanowires

The structural and optical properties of ZnO and ZnO/ZnS core-shell nanowires grown by a wet chemical method are investigated. The near-bandgap ultraviolet (UV) emission of the ZnO nanowires was enhanced by four times after coating with ZnS. The enhanced emission was attributed to surface passivation of the ZnO nanowires and localized states introduced during ZnS growth. The emission of the ZnO and ZnO/ZnS core-shell nanowires was attributed to neutral donor-bound excitons and localized excitons, respectively. Localized states prevented excitons from diffusing to nonradiative recombination centers, so therefore contributed to the enhanced emission. Emission from the localized exciton was not sensitive to temperature, so emission from the ZnO/ZnS core-shell nanowires was more stable at higher temperature. UV photodetectors based on the ZnO and ZnO/ZnS core-shell nanowires were fabricated. Under UV excitation, the device based on the ZnO/ZnS core-shell nanowires exhibited a photocurrent approximately 40 times higher than that of the device based on the ZnO nanowires. The differing photoresponse of the detectors was consistent with the existence of surface passivation and localized states. This study provides a means for modifying the optical properties of ZnO materials, and demonstrates the potential of ZnO/ZnS core-shell nanowires in UV excitonic emission and detection.

Piezo-phototronic UV/visible photosensing with optical-fiber-nanowire hybridized structures

An optical-fiber-nanowire hybridized UV-visible photodetector (PD) is reported. The PD is designed to allow direct integration in optical communication systems without requiring the use of couplers via fiber-welding technology. The PD works in two modes: axial and off-axial illumination mode. By using the piezo-phototronic effect, the performance of the PD is enhanced/optimized by up to 718% in sensitivity and 2067% in photoresponsivity.

Selective growth of ZnO nanorods on hydrophobic Si nanorod arrays

In this paper we describe the selective growth of ZnO nanorods (NRs) on top of hydrophobic Si NR arrays. The periodic Si NR arrays, prepared through electroless chemical etching and HF treatment, functioned as hydrophobic substrates. Droplets containing ZnO seeds could be positioned on the Si NR arrays, causing the ZnO seeds to deposit selectively upon them, with n-ZnO NR/p-Si NR array heterojunctions ultimately forming after hydrothermal growth of ZnO NRs. Because of compensation for the difference in refractive index between air and the Si substrate, the n-ZnO NR/p-Si NR arrays exhibited excellent absorption ability in the visible range. Devices based on these n-ZnO NR/p-Si NR array heterojunctions displayed not only rectifying behavior but also photovoltaic effects when illuminated with UV light. The low temperature and low cost of this fabrication process suggest that the selective growth of n-ZnO NRs on p-Si NR arrays might allow such structures to have diverse applications in optoelectronics.

Silver-modified nanosized ferroelectrics as a novel photocatalyst

Monodispersed ferroelectric BaTiO3 nanoparticles are synthesized as a model system to investigate the effect of ferroelectricity on a photocatalytic process. The results demonstrate that ferroelectricity can directly affect the photocatalytic activity due to promotion of the separation of photo-excited carriers by spontaneous polarization in ferroelectric materials. Moreover, Ag nanoparticles are attached on these BaTiO3 to further improve the photocatalytic property.

Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect

Silicon-based p-n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, piezoelectric polarizations, and photon excitation, has been demonstrated as an effective approach to tune/modulate the generation, separation, and recombination of photogenerated electron-hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, we utilize the strain-induced piezo-polarization charges in a piezoelectric n-ZnO layer to modulate the optoelectronic process initiated in a p-Si layer and thus optimize the performances of p-Si/ZnO NWs hybridized photodetectors for visible sensing via tuning the transport property of charge carriers across the Si/ZnO heterojunction interface. The maximum photoresponsivity R of 7.1 A/W and fastest rising time of 101 ms were obtained from these PDs when applying an external compressive strain of -0.10‰ on the ZnO NWs, corresponding to relative enhancement of 177% in R and shortening to 87% in response time, respectively. These results indicate a promising method to enhance/optimize the performances of non-piezoelectric semiconductor material (e.g., Si) based optoelectronic devices by the piezo-phototronic effect.

Flexible ultraviolet photodetectors with broad photoresponse based on branched ZnS-ZnO heterostructure nanofilms

The application of nanofilm networks made of branched ZnS-ZnO nanostructures as a flexible UV photodetector is demonstrated. The fabricated devices show excellent operational characteristics: tunable spectral selectivity, widerange photoresponse, fast response speed, and excellent environmental stability.

Controllable synthesis of branched ZnO/Si nanowire arrays with hierarchical structure

A rational approach for creating branched ZnO/Si nanowire arrays with hierarchical structure was developed based on a combination of three simple and cost-effective synthesis pathways. The crucial procedure included growth of crystalline Si nanowire arrays as backbones by chemical etching of Si substrates, deposition of ZnO thin film as a seed layer by magnetron sputtering, and fabrication of ZnO nanowire arrays as branches by hydrothermal growth. The successful synthesis of ZnO/Si heterogeneous nanostructures was confirmed by morphologic, structural, and optical characterizations. The roles of key experimental parameters, such as the etchant solution, the substrate direction, and the seed layer on the hierarchical nanostructure formation, were systematically investigated. It was demonstrated that an etchant solution with an appropriate redox potential of the oxidant was crucial for a moderate etching speed to achieve a well-aligned Si nanowire array with solid and round surface. Meanwhile, the presence of gravity gradient was a key issue for the growth of branched ZnO nanowire arrays. The substrate should be placed vertically or facedown in contrast to the solution surface during the hydrothermal growth. Otherwise, only the condensation of the ZnO nanoparticles took place in a form of film on the substrate surface. The seed layer played another important role in the growth of ZnO nanowire arrays, as it provided nucleation sites and determined the growing direction and density of the nanowire arrays for reducing the thermodynamic barrier. The results of this study might provide insight on the synthesis of hierarchical three-dimensional nanostructure materials and offer an approach for the development of complex devices and advanced applications.

Far-infrared optical constants of ZnO and ZnO/Ag nanostructures

We report on the synthesis of ZnO nanoplates and ZnO nanoplate/Ag nanoparticle heterostructures via a simple and cost effective wet chemical precipitation method.

ZnO/CuO heterojunction branched nanowires for photoelectrochemical hydrogen generation

We report a facile and large-scale fabrication of three-dimensional (3D) ZnO/CuO heterojunction branched nanowires (b-NWs) and their application as photocathodes for photoelectrochemical (PEC) solar hydrogen production in a neutral medium. Using simple, cost-effective thermal oxidation and hydrothermal growth methods, ZnO/CuO b-NWs are grown on copper film or mesh substrates with various ZnO and CuO NWs sizes and densities. The ZnO/CuO b-NWs are characterized in detail using high-resolution scanning and transmission electron microscopies exhibiting single-crystalline defect-free b-NWs with smooth and clean surfaces. The correlation between electrode currents and different NWs sizes and densities are studied in which b-NWs with longer and denser CuO NW cores show higher photocathodic current due to enhanced reaction surface area. The ZnO/CuO b-NW photoelectrodes exhibit broadband photoresponse from UV to near IR region, and higher photocathodic current than the ZnO-coated CuO (core/shell) NWs due to improved surface area and enhanced gas evolution. Significant improvement in the photocathodic current is observed when ZnO/CuO b-NWs are grown on copper mesh compared to copper film. The achieved results offer very useful guidelines in designing b-NWs mesh photoelectrodes for high-efficiency, low-cost, and flexible PEC cells using cheap, earth-abundant materials for clean solar hydrogen generation at large scales.

3D Branched nanowire photoelectrochemical electrodes for efficient solar water splitting

We report the systematic study of 3D ZnO/Si branched nanowire (b-NW) photoelectrodes and their application in solar water splitting. We focus our study on the correlation between the electrode design and structures (including Si NW doping, dimension of the trunk Si and branch ZnO NWs, and b-NW pitch size) and their photoelectrochemical (PEC) performances (efficiency and stability) under neutral conditions. Specifically, we show that for b-NW electrodes with lightly doped p-Si NW core, larger ZnO NW branches and longer Si NW cores give a higher photocathodic current, while for b-NWs with heavily doped p-Si NW trunks smaller ZnO NWs and shorter Si NWs provide a higher photoanodic current. Interestingly, the photocurrent turn-on potential decreases with longer p-Si NW trunks and larger ZnO NW branches resulting in a significant photocathodic turn-on potential shift of ~600 mV for the optimized ZnO/p-Si b-NWs compared to that of the bare p-Si NWs. A photocathode energy conversion efficiency of greater than 2% at -1 V versus Pt counter electrode and in neutral solution is achieved for the optimized ZnO/p-Si b-NW electrodes. The PEC performances or incident photon-to-current efficiency are further improved using Si NW cores with smaller pitch size. The photoelectrode stability is dramatically improved by coating a thin TiO2 protection layer using atomic-layer deposition method. These results provide very useful guidelines in designing photoelectrodes for selective solar water oxidation/reduction and overall spontaneous solar fuel generation using low cost earth-abundant materials for practical clean solar fuel production.

Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes

We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy.

Tailoring n-ZnO/p-Si branched nanowire heterostructures for selective photoelectrochemical water oxidation or reduction

We report the fabrication of three-dimensional (3D) branched nanowire (NW) heterostructures, consisting of periodically ordered vertical Si NW trunks and ZnO NW branches, and their application for solar water splitting. The branched NW photoelectrodes show orders of magnitudes higher photocurrent compared to the bare Si NW electrodes. More interestingly, selective photoelectrochemical cathodic or anodic behavior resulting in either solar water oxidation or reduction was achieved by tuning the doping concentration of the p-type Si NW core. Specifically, n-ZnO/p-Si branched NW array electrodes with lightly doped core show broadband absorption from UV to near IR region and photocathodic water reduction, while n-ZnO/p(+)-Si branched NW arrays show photoanodic water oxidation with photoresponse only to UV light. The photoelectrochemical stability for over 24 h under constant light illumination and fixed biasing potential was achieved by coating the branched NW array with thin layers of TiO2 and Pt. These studies not only reveal the promise of 3D branched NW photoelectrodes for high efficiency solar energy harvesting and conversion to clean chemical fuels, but also developing understanding enabling rational design of high efficiency robust photocathodes and photoanodes from low-cost and earth-abundant materials allowing practical applications in clean renewable energy.

Piezo-phototronic effect enhanced visible/UV photodetector of a carbon-fiber/ZnO-CdS double-shell microwire

A branched ZnO-CdS double-shell NW array on the surface of a carbon fiber (CF/ZnO-CdS) was successfully synthesized via a facile two-step hydrothermal method. Based on a single CF/ZnO-CdS wire on a polymer substrate, a flexible photodetector was fabricated, which exhibited ultrahigh photon responsivity under illuminations of blue light (1.11 × 10(5) A/W, 8.99 × 10(-8) W/cm(2), 480 nm), green light (3.83 × 10(4) A/W, 4.48 × 10(-8) W/cm(2), 548 nm), and UV light (1.94 × 10(5) A/W, 1.59 × 10(-8) W/cm(2), 372 nm), respectively. The responsivity of this broadband photon sensor was enhanced further by as much as 60% when the device was subjected to a -0.38% compressive strain. This is because the strain induced a piezopotential in ZnO, which tunes the barrier height at the ZnO-CdS heterojunction interface, leading to an optimized optoelectronic performance. This work demonstrates a promising application of piezo-phototronic effect in nanoheterojunction array based photon detectors.

Double-sided ZnO nanorod arrays on single-crystal Ag holed microdisks with enhanced photocataltytic efficiency

Novel hierarchical heterostructures of double-sided ZnO nanorod (NR) arrays grown on single-crystal Ag holed microdisks (HMDs) have been prepared through a two-step aqueous strategy including ZnO seed loading and the subsequent heteroepitaxial growth of ZnO NRs on Ag HMDs. By simply adjusting the synthetic parameters, ZnO NRs with variable NR diameters (20-200 nm), lengths (100-1.8 μm) and unusual shapes (concave, tubular and sharp tips) on Ag HMDs have been realized, which endows the Ag/ZnO heterostructures with versatile morphologies. The novel Ag/ZnO heterostructures consisting of integrated 1D semiconductor/2D metal nanostructured blocks with high specific surface area (SSA) and opened spatial architectures may promise important applications related to photoelectric fields. As expected, in photocatalytic measurements, the typical Ag HMD/ZnO NR heterostructure exhibits superior catalytic activity over other catalysts of bare ZnO NRs, ZnO NR arrays or heterostructured Ag nanowires (NWs)/ZnO NRs. The synergistic effect of the unique Ag HMD/ZnO NR heterostructures contributing to the high catalytic performance has been discussed in detail.

Structural and photoluminescence studies on catalytic growth of silicon/zinc oxide heterostructure nanowires

Silicon/zinc oxide (Si/ZnO) core-shell nanowires (NWs) were prepared on a p-type Si(111) substrate using a two-step growth process. First, indium seed-coated Si NWs (In/Si NWs) were synthesized using a plasma-assisted hot-wire chemical vapor deposition technique. This was then followed by the growth of a ZnO nanostructure shell layer using a vapor transport and condensation method. By varying the ZnO growth time from 0.5 to 2 h, different morphologies of ZnO nanostructures, such as ZnO nanoparticles, ZnO shell layer, and ZnO nanorods were grown on the In/Si NWs. The In seeds were believed to act as centers to attract the ZnO molecule vapors, further inducing the lateral growth of ZnO nanorods from the Si/ZnO core-shell NWs via a vapor-liquid-solid mechanism. The ZnO nanorods had a tendency to grow in the direction of [0001] as indicated by X-ray diffraction and high resolution transmission electron microscopy analyses. We showed that the Si/ZnO core-shell NWs exhibit a broad visible emission ranging from 400 to 750 nm due to the combination of emissions from oxygen vacancies in ZnO and In2O3 structures and nanocrystallite Si on the Si NWs. The hierarchical growth of straight ZnO nanorods on the core-shell NWs eventually reduced the defect (green) emission and enhanced the near band edge (ultraviolet) emission of the ZnO.

Unconventional growth mechanism for monolithic integration of III-V on silicon

The heterogeneous integration of III-V optoelectronic devices with Si electronic circuits is highly desirable because it will enable many otherwise unattainable capabilities. However, direct growth of III-V thin film on silicon substrates has been very challenging because of large mismatches in lattice constants and thermal coefficients. Furthermore, the high epitaxial growth temperature is detrimental to transistor performance. Here, we present a detailed studies on a novel growth mode which yields a catalyst-free (Al,In)GaAs nanopillar laser on a silicon substrate by metal-organic chemical vapor deposition at the low temperature of 400 °C. We study the growth and misfit stress relaxation mechanism by cutting through the center of the InGaAs/GaAs nanopillars using focused ion beam and inspecting with high-resolution transmission electron microscopy. The bulk material of the nanopillar is in pure wurtzite crystal phase, despite the 6% lattice mismatch with the substrate, with all stacking disorders well confined in the bottom-most transition region and terminated horizontally. Furthermore, InGaAs was found to be in direct contact with silicon, in agreement with the observed crystal orientation alignment and good electrical conduction across the interface. This is in sharp contrast to many III-V nanowires on silicon which are observed to stem from thin SiN(x), SiO(2), or SiO(2)/Si openings. In addition, GaAs was found to grow perfectly as a shell layer on In(0.2)Ga(0.8)As with an extraordinary thickness, which is 15 times greater than the theoretical thin-film critical thickness for a 1.5% lattice mismatch. This is attributed to the core-shell radial geometry allowing the outer layers to expand and release the strain due to lattice mismatch. The findings in this study redefine the rules for lattice-mismatched growth on heterogeneous substrates and device structure design.

Controlled growth of SnO₂@Fe₂O₃ double-sided nanocombs as anodes for lithium-ion batteries

A novel heterostructure is developed by grafting 1D SnO(2) nanorods onto both sides of pre-grown 2D Fe(2)O(3) nanoflakes, forming a comb-like rather than tree-like branched nanostructure. The SnO(2) nanorod branches are determined to grow along the [001] direction on the (±001) planes of Fe(2)O(3) nanoflakes. The resulting SnO(2)@Fe(2)O(3) nanocombs show stabilized cycling performance and improved volumetric energy density compared to pristine Fe(2)O(3) nanoflakes presumably due to the integration of SnO(2) branches as well as the 3D hierarchical structural features.

High efficiency dye-sensitized solar cells based on three-dimensional multilayered ZnO nanowire arrays with "caterpillar-like" structure

A 3D ZnO nanowire-based dye-sensitized solar cell (DSSC) with unique "caterpillar-like" structure was designed. Because of the significant improvement of the total ZnO nanowire surface area, the amount of light absorption was substantially increased. This increase in the light harvesting efficiency enables us to achieve an overall power conversion efficiency as high as 5.20%, which is the highest reported value to date for ZnO nanowire-based DSSCs. A branched-multilayered design of ZnO nanowire arrays grown from ZnO nanofiber seed layers proves to be very successful in fabricating 3D ZnO nanowire arrays. Practically, electrospun ZnO nanowires were used as the seeds in multilayer growth of ZnO nanowire arrays with a unique "caterpillar-like" structure. This unique structure significantly enhances the surface area of the ZnO nanowire arrays, leading to higher short-circuit currents. Additionally, this design resulted in closer spacing between the nanowires and more direct conduction pathways for electron transfer. Thus, the open-circuit voltage was so significantly improved as a direct result of the reduction in electron recombination.

n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection

A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO3 (LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO/LAO/p-Si PDs due to the high potential barrier between LAO and p-Si layers (~2.0 eV). These results support the use of n-ZnO/LAO/p-Si PDs in the visible-blind UV PDs in a visible-light environment.

3D branched nanowire heterojunction photoelectrodes for high-efficiency solar water splitting and H2 generation

We report the fabrication of a three dimensional branched ZnO/Si heterojunction nanowire array by a two-step, wafer-scale, low-cost, solution etching/growth method and its use as photoelectrode in a photoelectrochemical cell for high efficiency solar powered water splitting. Specifically, we demonstrate that the branched nanowire heterojunction photoelectrode offers improved light absorption, increased photocurrent generation due to the effective charge separation in Si nanowire backbones and ZnO nanowire branching, and enhanced gas evolution kinetics because of the dramatically increased surface area and decreased radius of curvature. The branching nanowire heterostructures offer direct functional integration of different materials for high efficiency water photoelectrolysis and scalable photoelectrodes for clean hydrogen fuel generation.

Nanorainforest solar cells based on multi-junction hierarchical p-Si/n-CdS/n-ZnO nanoheterostructures

Solar cells based on one-dimensional nanostructures have recently emerged as one of the most promising candidates to achieve high-efficiency solar energy conversion due to their reduced optical reflection, enhanced light absorption, and enhanced carrier collection. In nature, the rainforest, consisting of several stereo layers of vegetation, is the highest solar-energy-using ecosystem. Herein, we gave an imitation of the rainforest configuration in nanostructure-based solar cell design. Novel multi-layer nanorainforest solar cells based on p-Si nanopillar array/n-CdS nanoparticles/n-ZnO nanowire array heterostructures were achieved via a highly accessible, reproducible and controllable fabrication process. By choosing materials with appropriate bandgaps, an efficient light absorption and enhanced light harvesting were achieved due to the wide range of the solar spectrum covered. Si nanopillar arrays were introduced as direct conduction pathways for photon-generated charges' efficient collection and transport. The unique strategy using PMMA as a void-filling material to obtain a continuous, uniform and low resistance front electrode has significantly improved the overall light conversion efficiency by two orders of magnitude. These results demonstrate that nanorainforest solar cells, along with wafer-scale, low-cost and easily controlled processing, open up substantial opportunities for nanostructure photovoltaic devices.

In situ growth, structure characterization, and enhanced photocatalysis of high-quality, single-crystalline ZnTe/ZnO branched nanoheterostructures

Single-crystalline, high-quality branched ZnTe-core/ZnO-branch nanoheterostructures were synthesized by an in situ strategy in an environmental scanning electron microscope. Composition and structure characterization confirmed that ZnO nanowires were perfectly epitaxially grown on ZnTe nanowires as branches. Noticeably, growth temperature plays a crucial role in determining the density and diameter of the ZnO nanobranches on ZnTe nanowires: a higher growth temperature leads to ZnO nanowires with higher density and smaller diameter. It was demonstrated that ZnO nanobranches exhibited a selective nucleation behavior on distinct side facets of ZnTe nanowires. Highly ordered ZnO nanobranches were found epitaxially grown on {211} facet of ZnTe nanowires, while there was no ZnO nanowire growth on {110} facet of ZnTe nanowires. Using first-principles calculation, we found that surface energy of distinct side facets has a strong impact on ZnO nucleation, and confirm that {211} facet of ZnTe nanowires is energetically more favorable for ZnO nanowire growth than {110} facet, which is in good agreement with our experimental findings. Remarkably, such unique ZnTe/ZnO 3D branched nanowire heterostructures exhibited improved photocatalytic abilities, superior to ZnO nanowires and ZnTe nanowires, due to the much enhanced effective surface area of their unique architecture and effective electron-hole separation at the ZnTe/ZnO interfaces.