Anomalous Eu Valence State and Superconductivity in Undoped Eu3Bi2S4F4

Th2Mo2Ir2Si4C: An Intergrown Superconductor by Structure Design

Exploration of new superconductors in multicomponent complex systems remains challenging. Among complex superconductors, those containing distinct superconducting layers are quite rare. In this work, based on the block-layer model together with formation energy calculations, we have designed and successfully synthesized a quinary intermetallic compound, Th2Mo2Ir2Si4C. The new material crystallizes in an intergrowth structure with an alternate stacking of superconducting ThMo2Si2C and ThIr2Si2 block layers along the crystallographic c axis. The interblock-layer interaction is dominated by the Si-Ir bonding, which results in a relatively shorter interlayer distance and a stronger coupling between [Mo2Si2C] and fluorite-type [Si2Ir2] layers. Enhanced superconductivity, with a superconducting transition temperature of Tc = 3.4 K and a zero-temperature upper critical field of Hc2(0) = 9.5 kOe, is revealed by measurements of electrical resistivity, magnetic susceptibility, and specific heat. The strategy of the block-layer design demonstrated here can be extended to other intergrowth systems with various functional motifs.

Discovery of a Superconductor Bi5 O4 S3 Cl Containing the Unique BiS3 Layer

The BiS2 -based layered superconductors with structures similar to those of cuprates and iron-based superconductors have stimulated much research interest. Here, a new quaternary compound is reported, Bi5 O4 S3 Cl, which crystalizes in a tetragonal structure with P4/mmm (No. 123) space group having alternately stacking unique BiS3 layers and Bi2 O2 layers along the c-axis with a Cl atom located at the center of the unit cell. A superconducting transition above 3 K is observed for both electrical transport and magnetic measurements. Hall resistivity measurements show its multiband character with a conduction dominated by electron-like charge carriers. The first-principles calculations exhibit that the semiconducting parent phase Bi5 O4 S3 Cl becomes metallic when sulfur vacancies are introduced, which hints the origin of superconductivity in Bi5 O4 S3 Cl. The findings will inspire the exploration of new BiS-based superconductors.

2D Homologous Series SrFMnBiSn+2 (M = Pb, Ag0.5Bi0.5; n = 0, 1) and Commensurately Modulated Sr2F2Bi2/3S2

We report three new mixed-anion two-dimensional (2D) compounds: SrFPbBiS₃, SrFAg_0.5Bi_1.5S₃, and Sr₂F₂Bi_2/3S₂. Their structures as well as the parent compound SrFBiS₂ were refined using single-crystal X-ray diffraction data, with the sequence of SrFBiS₂, SrFPbBiS₃, and SrFAg_0.5Bi_1.5S₃ defining the new homologous series SrFM_nBiS_n+2 (M = Pb, Ag_0.5Bi_0.5; n = 0, 1). Sr₂F₂Bi_2/3S₂ has a different structure, which is modulated with a q vector of 1/3b* and was refined in superspace group X2/m(0β0)00 as well as in the 1 × 3 × 1 superstructure with space group C2/m (with similar results). Sr₂F₂Bi_2/3S₂ features hexagonal layers of alternating [Sr₂F₂]²⁺ and [Bi_2/3S₂]^2-, and the modulated structure arises from the unique ordering pattern of Sr²⁺ cations. SrFPbBiS₃, SrFAg_0.5Bi_1.5S₃, and Sr₂F₂Bi_2/3S₂ are semiconductors with band gaps of 1.31, 1.21, and 1.85 eV, respectively. The latter compound exhibits room temperature red photoluminescence at ∼700 nm.

Pressure-induced enhancement of the superconducting transition temperature in La2O2Bi3AgS6

Charge density wave (CDW) instability is often found in phase diagrams of superconductors such as cuprates and certain transition-metal dichalcogenides. This proximity to superconductivity triggers the question on whether CDW instability is responsible for the pairing of electrons in these superconductors. However, this issue remains unclear and new systems are desired to provide a better picture. Here, we report the temperature-pressure phase diagram of a recently discovered BiS₂superconductor La₂O₂Bi₃AgS₆, which shows a possible CDW transition atT* ∼ 155 K and a superconducting transition atT_c∼ 1.0 K at ambient pressure, via electrical resistivity measurements. Upon applying pressure,T* decreases linearly and extrapolates to 0 K at 3.9 GPa. Meanwhile,T_cis enhanced and reaches maximum value of 4.1 K at 3.1 GPa, forming a superconducting dome in the temperature-pressure phase diagram.

Quaternary Chalcohalides CdSnSX2 (X = Cl or Br) with Neutral Layers: Syntheses, Structures, and Photocatalytic Properties

Inorganic chalcohalides are attracting a tremendous amount of attention because of their remarkable structural variety and desirable physical properties. Although great advances have been made in recent years, functional inorganic chalcohalides with two-dimensional neutral layers are still rare. Herein, two novel chalcohalides CdSnSX₂ (X = Cl or Br) with high yields were obtained by reacting CdX₂ with SnS using a traditional solid-state method at 823 K. Both of these chalcohalides adopt orthorhombic space group Cmcm (No. 63) with the following structural values: a = 4.014(4)-4.064(2) Å, b = 12.996(2)-13.746(3) Å, c = 9.471(2)-9.621(2) Å, V = 494.1(8)-537.5(2) ų, and Z = 4. The prominent architectural feature is the unique two-dimensional [CdSnSX₂] neutral layer consisting of composite [CdX₂] and [SnS] sublattices that are connected alternately through the Cd-S-Sn bonds along the ac plane. The [CdX₂] sublattice consists of a single octahedral chain of Cd-centered [CdX₄S₂] groups sharing cis-X edges, while the [SnS] sublattice consists of a bend-shaped chain of unusual [SnS₂X₂] units sharing vertices of S atoms. Significantly, each CdSnSX₂ form (X = Cl or Br) shows high visible-light-induced photocatalytic activity for rhodamine B degradation, which is ∼7.0 times higher than that of nitrogen-doped TiO₂ (TiO_2-xN_x) under the same experimental conditions. This discovery enriches the categories of inorganic chalcohalides and provides more choices of candidate materials for photocatalytic applications.

The local structure of self-doped BiS2-based layered systems as a function of temperature

We have studied the local structure of layered Eu(La,Ce)FBiS2 compounds by Bi L3-edge extended X-ray absorption fine structure (EXAFS) measurements as a function of temperature. We find that the BiS2 sub-lattice is largely distorted in EuFBiS2, characterized by two different in-plane Bi-S1 distances. The distortion is marginally affected by partial substitutions of Ce (Eu0.5Ce0.5FBiS2) and La (Eu0.5La0.5FBiS2). The temperature dependence of the local structure distortion reveals an indication of possible charge density wave like instability in the pristine self-doped EuFBiS2 and Ce substituted Eu0.5Ce0.5FBiS2 while it is suppressed in La substituted Eu0.5La0.5FBiS2. In compounds with higher superconducting transition temperature, the axial Bi-S2 bond distance is elongated and the related bond stiffness decreased, suggesting some important role of this in the charge transfer mechanism for self-doping in the active BiS2-layer. In-plane Bi-S1 distances are generally softer than the axial Bi-S2 distance and they suffer further softening by the substitutions. The results are discussed in relation to an important role of the Bi defect chemistry driven asymmetric local environment in the physical properties of these materials.

A Self-Doped Oxygen-Free High-Critical-Temperature (High-Tc) Superconductor: SmFFeAs

A new iron-base superconductor SmFFeAs is synthesized via solid-state metathesis reaction by using SmFCl and LiFeAs as precursors. The compound crystallized in the tetragonal ZrCuSiAs-type structure with the space group P4/nmm and lattice parameters of a = 3.9399(0) Å and c = 8.5034(1) Å. The superconducting diamagnetic transition occurs at 56 K for the parent compound, which confirmed by the resistivity and magnetic susceptibility. The appearance of superconductivity without extrinsic doping could be ascribed to the self-doping owing to the mixed valence of Sm ions. The as-synthesized SmFFeAs serves as a new self-doped parent compound for oxygen-free high-critical-temperature (high-T_c) superconductors.

Superconductivity in Bi3O2S2Cl with Bi-Cl Planar Layers

A quaternary compound Bi₃O₂S₂Cl, which consists of novel [BiS₂Cl]^2- layers, is reported. It adopts a layered structure of the space group I4/ mmm (No. 139) with lattice parameters: a = 3.927(1) Å, c = 21.720(5) Å. In this compound, bismuth and chlorine atoms form an infinite planar layer, which is unique among the bismuth halides. Superconductivity is observed in both polycrystals and single crystals, and is significantly enhanced in the samples prepared with less sulfur or at higher temperatures. By tuning the content of sulfur, Bi₃O₂S₂Cl can be converted from a semiconductor into a superconductor. The superconducting critical temperature ranges from 2.6 to 3.5 K. Our discovery of the [BiS₂Cl]^2- layer opens another door in searching for the bismuth compounds with novel physical properties.

Crystal Structure and Superconductivity of Tetragonal and Monoclinic Ce1- xPr xOBiS2

Ce_{1- x}Pr _xOBiS₂ powders and Ce_0.5Pr_0.5OBiS₂ single crystals were synthesized and their structure and superconductive properties were examined by X-ray diffraction, X-ray absorption, electronic resistivity, and magnetization. While PrOBiS₂ was found to be in a monoclinic phase with one-dimensional Bi-S zigzag chains showing no superconductive transition above 0.1 K, CeOBiS₂ was in a tetragonal phase with two-dimensional Bi-S planes showing zero resistivity below 1.3 K. In the range x = 0.3-0.9 in Ce_{1- x}Pr _xOBiS₂, both monoclinic and tetragonal phases were formed together with zero resistivity up to a maximum temperature of 2.2 K. A Ce_0.5Pr_0.5OBiS₂ single crystal, which showed both zero resistivity and a decrease in magnetization at ∼2.4 K, presented a tetragonal structure. Short Bi-S bonding in flat two-dimensional Bi-S planes and mixed Ce³⁺/Ce⁴⁺ were characteristic features of the Ce_0.5Pr_0.5OBiS₂ single crystal, which presumably triggered its superconductivity.

Valence State of Eu and Superconductivity in Se-Substituted EuSr2Bi2S4F4 and Eu2SrBi2S4F4

Recently, we reported the synthesis and investigations of EuSr₂Bi₂S₄F₄ and Eu₂SrBi₂S₄F₄. We have now been able to induce superconductivity in EuSr₂Bi₂S₄F₄ by Se substitution at the S site (isovalent substitution) with T_c = 2.9 K in EuSr₂Bi₂S₂Se₂F₄. The other compound, Eu₂SrBi₂S₄F₄, shows a significant enhancement of T_c. In Se-substituted Eu₂SrBi₂S_4-xSe_xF₄, we find T_c = 2.6 K for x = 1.5 and T_c = 2.8 K for x = 2, whereas T_c = 0.4 K in the Se-free sample. In addition to superconductivity, an important effect associated with Se substitution is that it gives rise to remarkable changes in the Eu valence. Our ¹⁵¹Eu Mössbauer and X-ray photoemission spectroscopic measurements show that Se substitution in both of the compounds Eu₂SrBi₂S₄F₄ and EuSr₂Bi₂S₄F₄ gives rise to an increase in the Eu²⁺ component in the mixed-valence state of Eu.

Unusual Mixed Valence of Eu in Two Materials-EuSr2Bi2S4F4 and Eu2SrBi2S4F4: Mössbauer and X-ray Photoemission Spectroscopy Investigations

We have synthesized two new Eu-based compounds, EuSr₂Bi₂S₄F₄ and Eu₂SrBi₂S₄F₄, which are derivatives of Eu₃Bi₂S₄F₄, an intrinsic superconductor with T_c = 1.5 K. They belong to a tetragonal structure (SG: I4/mmm, Z = 2), similar to the parent compound Eu₃Bi₂S₄F₄. Our structural and ¹⁵¹Eu Mössbauer spectroscopy studies show that, in EuSr₂Bi₂S₄F₄, Eu-atoms exclusively occupy the crystallographic 2a-sites. In Eu₂SrBi₂S₄F₄, 2a-sites are fully occupied by Eu-atoms and the other half of Eu-atoms and Sr-atoms together fully occupy 4e-sites in a statistical distribution. In both compounds Eu atoms occupying the crystallographic 2a-sites are in a homogeneous mixed valent state ∼2.6-2.7. From our magnetization studies in an applied H ≤ 9 T, we infer that the valence of Eu-atoms in Eu₂SrBi₂S₄F₄ at the 2a-sites exhibits a shift toward 2+. Our XPS studies corroborate the occurrence of valence fluctuations of Eu and after Ar-ion sputtering show evidence of enhanced population of Eu²⁺-states. Resistivity measurements, down to 2 K, suggest a semimetallic nature for both compounds.

Role of valence changes and nanoscale atomic displacements in BiS2-based superconductors

Superconductivity within layered crystal structures has attracted sustained interest among condensed matter community, primarily due to their exotic superconducting properties. EuBiS₂F is a newly discovered member in the BiS₂-based superconducting family, which shows superconductivity at 0.3 K without extrinsic doping. With 50 at.% Ce substitution for Eu, superconductivity is enhanced with Tc increased up to 2.2 K. However, the mechanisms for the T_c enhancement have not yet been elucidated. In this study, the Ce-doping effect on the self-electron-doped superconductor EuBiS₂F was investigated by X-ray absorption spectroscopy (XAS). We have established a relationship between Ce-doping and the T_c enhancement in terms of Eu valence changes and nanoscale atomic displacements. The new finding sheds light on the interplay among superconductivity, charge and local structure in BiS₂-based superconductors.

Structural Difference in Superconductive and Nonsuperconductive Bi-S Planes within Bi4O4Bi2S4 Blocks

The relationship between the structure and superconductivity of Bi4O4S3 powders synthesized by heating under ambient and high pressures was investigated using synchrotron X-ray diffraction, Raman spectroscopy, and transmission electron microscopy (TEM) observation. The Bi4O4S3 powders synthesized under ambient pressure exhibited a strong superconductivity (diamagnetic) signal and zero resistivity below ∼4.5 K, while the Bi4O4S3 powder synthesized by the high-pressure method exhibited a low-intensity signal down to 2 K. Further annealing of the latter Bi4O4S3 powder under ambient pressure led to the development of a strong signal and zero resistivity. The crystal structures of all Bi4O4S3 phases consisted of Bi4O4Bi2S4 blocks including a Bi-S layer and anion(s) sandwiched between Bi4O4Bi2S4 blocks, but minor structural differences were detected. A comparison of the structures of the superconductive and nonsuperconductive Bi4O4S3 samples suggested that the superconductive Bi4O4S3 phases had slightly smaller lattice parameters. The average structures of the superconductive Bi4O4S3 phases were characterized by a slightly shorter and less bent Bi-S plane. Raman spectroscopy detected vibration of the S-O bonds, which can be attributed to sandwiched anion(s) such as SO4(2-). TEM observation showed stacking faults in the superconductive Bi4O4S3 phases, which indicated local fluctuation of the average structures. The observed superconductivity of Bi4O4S3 was discussed based on impurity phases, enhanced hybridization of the px and py orbitals of the Bi-S plane within Bi4O4Bi2S4 blocks, local fluctuation of the average structures, compositional deviation related to suspicious anion(s) sandwiched between Bi4O4Bi2S4 blocks, and the possibility of suppression of the charge-density-wave state by enriched carrier concentrations.

In-plane chemical pressure essential for superconductivity in BiCh2-based (Ch: S, Se) layered structure

BiCh2-based compounds (Ch: S, Se) are a new series of layered superconductors, and the mechanisms for the emergence of superconductivity in these materials have not yet been elucidated. In this study, we investigate the relationship between crystal structure and superconducting properties of the BiCh2-based superconductor family, specifically, optimally doped Ce1-xNdxO0.5F0.5BiS2 and LaO0.5F0.5Bi(S1-ySey)2. We use powder synchrotron X-ray diffraction to determine the crystal structures. We show that the structure parameter essential for the emergence of bulk superconductivity in both systems is the in-plane chemical pressure, rather than Bi-Ch bond lengths or in-plane Ch-Bi-Ch bond angle. Furthermore, we show that the superconducting transition temperature for all REO0.5F0.5BiCh2 superconductors can be determined from the in-plane chemical pressure.