Systematic Modulation of Charge Transport in Molecular Devices through Facile Control of Molecule-Electrode Coupling Using a Double Self-Assembled Monolayer Nanowire Junction

Engineering the Interfacing of Molecules with 2D Transition Metal Dichalcogenides: Enhanced Multifunctional Electronics

ConspectusEngineering all interfaces between different components in electronic devices is the key to control and optimize fundamental physical processes such as charge injection at metal-semiconductor interfaces, gate modulation at the dielectric-semiconductor interface, and carrier modulation at semiconductor-environment interfaces. The use of two-dimensional (2D) crystals as semiconductors, by virtue of their atomically flat dangling bond-free structures, can facilitate the tailoring of such interfaces effectively. In this context, 2D transition metal dichalcogenides (TMDs) have garnered tremendous attention over the past two decades owing to their exclusive and outstanding physical and chemical characteristics such as their strong light-matter interactions and high charge mobility. These properties position them as promising building blocks for next-generation semiconductor materials. The combination of their large specific surface area, unique electronic structure, and properties highly sensitive to environmental changes makes 2D TMDs appealing platforms for applications in optoelectronics and sensing. While a broad arsenal of TMDs has been made available that exhibit a variety of electronic properties, the latter are unfortunately hardly tunable. To overcome this problem, the controlled functionalization of TMDs with molecules and assemblies thereof represents a most powerful strategy to finely tune their surface characteristics for electronics. Such functionalization can be used not only to encapsulate the electronic material, therefore enhancing its stability in air, but also to impart dynamic, stimuli-responsive characteristics to TMDs and to selectively recognize the presence of a given analyte in the environment, demonstrating unprecedented application potential.In this Account, we highlight the most enlightening recent progress made on the interface engineering in 2D TMD-based electronic devices via covalent and noncovalent functionalization with suitably designed molecules, underlining the remarkable synergies achieved. While electrode functionalization allows modulating charge injection and extraction, the functionalization of the dielectric substrate enables tuning of the carrier concentration in the device channel, and the functionalization of the upper surface of 2D TMDs allows screening the interaction with the environment and imparts molecular functionality to the devices, making them versatile for various applications. The tailored interfaces enable enhanced device performance and open up avenues for practical applications. This Account specifically focuses on our recent endeavor in the unusual properties conferred to 2D TMDs through the functionalization of their interfaces with stimuli-responsive molecules or molecular assemblies. This includes electrode-functionalized devices with modulable performance and charge carriers, molecular-bridged TMD network devices with overall enhanced electrical properties, sensor devices that are highly responsive to changes in the external environment, in particular, electrochemically switchable transistors that react to external electrochemical signals, optically switchable transistors that are sensitive to external light inputs, and multiresponsive transistors that simultaneously respond to multiple external stimuli including optical, electrical, redox, thermal, and magnetic inputs and their application in the development of unprecedented memories, artificial synapses, and logic inverters. By presenting the current challenges, opportunities, and prospects in this blooming research field, we will discuss the powerful integration of such strategies for next-generation electronic digital devices and logic circuitries, outlining future directions and potential breakthroughs in interface engineering.

Isomer Discrimination via Defect Engineering in Monolayer MoS2

The all-surface nature of two-dimensional (2D) materials renders them highly sensitive to environmental changes, enabling the on-demand tailoring of their physical properties. Transition metal dichalcogenides, such as 2H molybdenum disulfide (MoS2), can be used as a sensory material capable of discriminating molecules possessing a similar structure with a high sensitivity. Among them, the identification of isomers represents an unexplored and challenging case. Here, we demonstrate that chemical functionalization of defect-engineered monolayer MoS2 enables isomer discrimination via a field-effect transistor readout. A multiscale characterization comprising X-ray photoelectron spectroscopy, Raman spectroscopy, photoluminescence spectroscopy, and electrical measurement corroborated by theoretical calculations revealed that monolayer MoS2 exhibits exceptional sensitivity to the differences in the dipolar nature of molecules arising from their chemical structure such as the one in difluorobenzenethiol isomers, allowing their precise recognition. Our findings underscore the potential of 2D materials for molecular discrimination purposes, in particular for the identification of complex isomers.

Optical properties of plasmonic tunneling junctions

Over the last century, quantum theories have revolutionized our understanding of material properties. One of the most striking quantum phenomena occurring in heterogeneous media is the quantum tunneling effect, where carriers can tunnel through potential barriers even if the barrier height exceeds the carrier energy. Interestingly, the tunneling process can be accompanied by the absorption or emission of light. In most tunneling junctions made of noble metal electrodes, these optical phenomena are governed by plasmonic modes, i.e., light-driven collective oscillations of surface electrons. In the emission process, plasmon excitation via inelastic tunneling electrons can improve the efficiency of photon generation, resulting in bright nanoscale optical sources. On the other hand, the incident light can affect the tunneling behavior of plasmonic junctions as well, leading to phenomena such as optical rectification and induced photocurrent. Thus, plasmonic tunneling junctions provide a rich platform for investigating light-matter interactions, paving the way for various applications, including nanoscale light sources, sensors, and chemical reactors. In this paper, we will introduce recent research progress and promising applications based on plasmonic tunneling junctions.

Single-molecule nano-optoelectronics: insights from physics

Single-molecule optoelectronic devices promise a potential solution for miniaturization and functionalization of silicon-based microelectronic circuits in the future. For decades of its fast development, this field has made significant progress in the synthesis of optoelectronic materials, the fabrication of single-molecule devices and the realization of optoelectronic functions. On the other hand, single-molecule optoelectronic devices offer a reliable platform to investigate the intrinsic physical phenomena and regulation rules of matters at the single-molecule level. To further realize and regulate the optoelectronic functions toward practical applications, it is necessary to clarify the intrinsic physical mechanisms of single-molecule optoelectronic nanodevices. Here, we provide a timely review to survey the physical phenomena and laws involved in single-molecule optoelectronic materials and devices, including charge effects, spin effects, exciton effects, vibronic effects, structural and orbital effects. In particular, we will systematically summarize the basics of molecular optoelectronic materials, and the physical effects and manipulations of single-molecule optoelectronic nanodevices. In addition, fundamentals of single-molecule electronics, which are basic of single-molecule optoelectronics, can also be found in this review. At last, we tend to focus the discussion on the opportunities and challenges arising in the field of single-molecule optoelectronics, and propose further potential breakthroughs.

Analysis of Guest Adsorption on Crystal Surfaces Based on the Fragment Molecular Orbital Method

For gaining insights into interactions in periodic systems, an analysis is developed based on the fragment molecular orbital method combined with periodic boundary conditions. The adsorption energy is decomposed into guest and surface polarization and deformation energy, guest-surface and guest-guest interactions, and the vibrational free energy. The analysis is applied to the adsorption of guest molecules to Ih (001) ice surface. The cooperativity effects result in a non-linear change in the adsorption energy with coverage due to many-body effects. The role of dispersion is found to be dominant for guests with long hydrophobic tails. A rule is proposed relating the length of the alkyl tail with the formation of the guest layer. The computed binding enthalpies are in good agreement with experimental values. For high coverage, adsorbed molecules can form an ordered layer known as self-assembled monolayer.

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

One critical problem inhibiting the application of MoS₂ field-effect transistors (FETs) is the hysteresis in their transfer characteristics, which is typically associated with charge trapping (CT) and charge detrapping (CDT) induced by atomic defects at the MoS₂-dielectric interface. Here, we propose a novel atomistic framework to simulate electronic processes across the MoS₂-SiO₂ interface, demonstrating the distinct CT/CDT behavior of different types of atomic defects and further revealing the defect type(s) that most likely cause hysteresis. An anharmonic approximation of the classical Marcus theory is developed and combined with state-of-the-art density functional theory to calculate the gate bias-dependent CT/CDT rates. All the key electronic quantities are calculated with Heyd-Scuseria-Ernzerhof hybrid functionals. The results show that single Si-dangling bond defects are active electron trapping centers. Single O-dangling bond defects are active hole trapping centers, which are more likely to be responsible for the hysteresis phenomenon due to their significant CT rate and apparent threshold voltage shift. In contrast, double Si-dangling bond defects are not active trap centers. These findings provide fundamental physical insights for understanding the hysteresis behavior of MoS₂ FETs and provide vital support for understanding and solving the reliability of nanoscale devices.

Amine-Anchored Aromatic Self-Assembled Monolayer Junction: Structure and Electric Transport Properties

We studied the structure and transport properties of aromatic amine self-assembled monolayers (NH₂-SAMs) on an Au surface. The oligophenylene and oligoacene amines with variable lengths can form a densely packed and uniform monolayer under proper assembly conditions. Molecular junctions incorporating an eutectic Ga-In (EGaIn) top electrode were used to characterize the charge transport properties of the amine monolayer. The current density J of the junction decreases exponentially with the molecular length (d), as J = J₀ exp(-βd), which is a sign of tunneling transport, with indistinguishable values of J₀ and β for NH₂-SAMs of oligophenylene and oligoacene, indicating a similar molecule-electrode contact and tunneling barrier for two groups of molecules. Compared with the oligophenylene and oligoacene molecules with thiol (SH) as the anchor group, a similar β value (∼0.35 Å^-1) of the aromatic NH₂-SAM suggests a similar tunneling barrier, while a lower (by 2 orders of magnitude) injection current J₀ is attributed to lower electronic coupling Γ of the amine group with the electrode. These observations are further supported by single-level tunneling model fitting. Our study here demonstrates the NH₂-SAMs can work as an effective active layer for molecular junctions, and provide key physical parameters for the charge transport, paving the road for their applications in functional devices.

Wafer-Scale and Full-Coverage Two-Dimensional Molecular Monolayers Strained by Solvent Surface Tension Balance

Inspired by the outstanding properties discovered in two-dimensional materials, the bottom-up generation of molecular monolayers is becoming again extremely popular as a route to develop novel functional materials and devices with tailored characteristics and minimal materials consumption. However, achieving a full-coverage over a large-area still represents a grand challenge. Here we report a molecular self-assembly protocol at the water surface in which the monolayers are strained by a novel solvent surface tension balance (SSTB) instead of a physical film balance as in the conventional Langmuir-Blodgett (LB) method. The obtained molecular monolayers can be transferred onto any arbitrary substrate including rigid inorganic oxides and metals, as well as flexible polymeric dielectrics. As a proof-of-concept, their application as ideal modification layers of a dielectric support for high-performance organic field-effect transistors (OFETs) has been demonstrated. The field-effect mobilities of both p- and n-type semiconductors displayed dramatic improvements of 1-3 orders of magnitude on SSTB-derived molecular monolayer, reaching values as high as 6.16 cm² V^-1 s^-1 and 0.68 cm² V^-1 s^-1 for pentacene and PTCDI-C8, respectively. This methodology for the fabrication of wafer-scale and defect-free molecular monolayers holds potential toward the emergence of a new generation of high-performance electronics based on two-dimensional materials.

Kinetic Isotope Effects on Electron Transfer Across Self-Assembled Monolayers on Gold

Reactions requiring controlled delivery of protons and electrons are important in storage of energy in small molecules. While control over proton transfer can be achieved by installing appropriate chemical functionality in the catalyst, control of electron-transfer (ET) rates can be achieved by utilizing self-assembled monolayers (SAMs) on electrodes. Thus, a deeper understanding of the ET through SAM to an immobilized or covalently attached redox-active species is desirable. Long-range ET across several SAM-covered Au electrodes to covalently attached ferrocene is investigated using protonated and deuterated thiols (R-SH/R-SD). The rate of tunneling is measured using both chronoamperometry and cyclic voltammetry, and it shows a prominent kinetic isotope effect (KIE). The KIE is ∼2 (normal) for medium-chain-length thiols but ∼0.47 (inverse) for long-chain thiols. These results imply substantial contribution from the classical modes at the Au-(H)SR interface, which shifts substantially upon deuteration of the thiols, to the ET process. The underlying H/D KIE of these exchangeable thiol protons should be considered when analyzing solvent isotope effects in catalysis utilizing SAM.

Thermodynamic Phase-like Transition Effect of Molecular Self-assembly

The technique of self-assembled monolayers (SAMs) is frequently applied for grafting functional groups or area-selective deposition of thin films on a material surface. The formation and quality of SAMs are fundamentally determined by thermodynamic data, which are difficult to measure with available experimental methods. This work quantitatively extracted thermodynamic parameters including ΔH°, ΔG°, and ΔS° during the SAMs construction process with an ultrasensitive resonant microcantilever as molecule-surface interactions real-time recording tool. By correlating the thermodynamic parameters with self-assembling temperatures, a new thermodynamic phase-like transition effect of molecular self-assembly has been first revealed. The sharp transition of the thermodynamic parameters defines the critical condition for SAMs formation. The thermodynamic data further provide optimized reaction conditions for constructing high-quality SAMs. The explored quantitative thermodynamic analysis method not only plays as criterion for SAM growth but also helps to fundamentally elucidate physicochemical mechanism of spontaneous self-assembly.