Ambient-Air-Stable Lead-Free CsSnI3 Solar Cells with Greater than 7.5% Efficiency

Deciphering the Atomic-Scale Structural Origin for Photoluminescence Quenching in Tin-Lead Alloyed Perovskite Nanocrystals

The development of tin-lead alloyed halide perovskite nanocrystals (PNCs) is highly desirable for creating ultrastable, eco-friendly optoelectronic applications. However, the current incorporation of tin into the lead matrix results in severe photoluminescence (PL) quenching. To date, the precise atomic-scale structural origins of this quenching are still unknown, representing a significant barrier to fully realizing the potential of these materials. Here, we uncover the distinctive defect-related microstructures responsible for PL quenching using atomic-resolution scanning transmission electron microscopy and theoretical calculations. Our findings reveal an increase in point defects and Ruddlesden-Popper (RP) planar faults with increasing tin content. Notably, the point defects include a spectrum of vacancies and previously overlooked antisite defects with bromide vacancies and cation antisite defects emerging as the primary contributors to deep-level defects. Furthermore, the RP planar faults exhibit not only the typical rock-salt stacking pattern found in pure Pb-based PNCs but also previously undocumented microstructures rich in bromide vacancies and deep-level cation antisite defects. Direct strain imaging uncovers severe lattice distortion and significant inhomogeneous strain distributions caused by point defect aggregation, potentially breaking the local force balance and driving RP planar fault formation via lattice slippage. Our work illuminates the nature and evolution of defects in tin-lead alloyed halide perovskite nanocrystals and their profound impact on PL quenching, providing insights that support future material strategies in the development of less toxic tin-lead alloyed perovskite nanocrystals.

A Soldering Flux Tackles Complex Defects Chemistry in Sn-Pb Perovskite Solar Cells

Developing tin-lead (Sn-Pb) narrow-bandgap perovskites is crucial for the deployment of all-perovskite tandem solar cells, which can help to exceed the limits of single-junction photovoltaics. However, the Sn-Pb perovskite suffers from a large number of bulk traps and interfacial nonradiative recombination centers, with unsatisfactory open-circuit voltage and the consequent device efficiency. Herein, for the first time, it is shown that abietic acid (AA), a commonly used flux for metal soldering, effectively tackles complex defects chemistry in Sn-Pb perovskites. The conjugated double bond within AA molecule plays a key role for self-elimination of Sn4+-Pb0 defects pair, via a redox process. In addition, C═O group is able to coordinate with Sn2+, leading to the improved antioxidative stability of Sn-Pb perovskites. Consequently, a ten-times longer carrier lifetime is observed, and the defects-associated dual-peak emission feature at low temperature is significantly inhibited. The resultant device achieves a power conversion efficiency improvement from 22.28% (Ref) to 23.42% with respectable stability under operational and illumination situations.

iso-BAI Guided Surface Recrystallization for Over 14% Tin Halide Perovskite Solar Cells

Tin-based perovskite solar cells (PSCs) are promising environmentally friendly alternatives to their lead-based counterparts, yet they currently suffer from much lower device performance. Due to variations in the chemical properties of lead (II) and tin (II) ions, similar treatments may yield distinct effects resulting from differences in underlying mechanisms. In this work, a surface treatment on tin-based perovskite is conducted with a commonly employed ligand, iso-butylammonium iodide (iso-BAI). Unlike the passivation effects previously observed in lead-based perovskites, such treatment leads to the recrystallization of the surface, driven by the higher solubility of tin-based perovskite in common solvents. By carefully designing the solvent composition, the perovskite surface is effectively modified while preserving the integrity of the bulk. The treatment led to enhanced surface crystallinity, reduced surface strain and defects, and improved charge transport. Consequently, the best-performing power conversion efficiency of FASnI3 PSCs increases from 11.8% to 14.2%. This work not only distinguishes the mechanism of surface treatments in tin-based perovskites from that of lead-based counterparts, but also underscores the critical role in designing tailor-made strategies for fabricating efficient tin-based PSCs.

The Renaissance of Poly(3-hexylthiophene) as a Promising Hole-Transporting Material Toward Efficient and Stable Perovskite Solar Cells

To push the commercialization of the promising photovoltaic technique of perovskite solar cells (PSCs), the three-element golden law of efficiency, stability, and cost should be followed. As the key component of PSCs, hole-transporting materials (HTMs) involving widely-used organic semiconductors such as 2,2',7,7'-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9'-spirobifluorene (Spiro-OMeTAD) or poly(triarylamine) (PTAA) usually suffer high-cost preparation and low operational stability. Fortunately, the studies on the classical p-type polymer poly(3-hexylthiophene) (P3HT) as an alternative HTM have recently sparked a broad interest due to its low-cost synthesis, excellent batch-to-batch purity, superior hole conductivity as well as controllable and stable film morphology. Despite this, the device efficiency still lags behind P3HT-based PSCs mainly owing to the mismatched energy level and poor interfacial contact between P3HT and the perovskite layer. Hence, in this review, the study timely summarizes the developed strategies for overcoming the corresponding issues such as interface engineering, morphology regulation, and formation of composite HTMs from which some critical clues can be extracted to provide guidance for further boosting the efficiency and stability of P3HT-based devices. Finally, in the outlook, the future research directions either from the viewpoint of material design or device engineering are outlined.

Stable Inorganic Colloidal Tin and Tin-Lead Perovskite Nanocrystals with Ultralong Carrier Lifetime via Sn(IV) Control

Inorganic tin (Sn) perovskite nanocrystals offer a promising solution to the potential toxicity concerns associated with their established lead (Pb)-based counterparts. Yet, achieving their superior stability and optoelectronic properties remains an ongoing challenge. Here, we report a synthesis of high-symmetry α-phase CsSnI3 nanocrystals with an ultralong 278 ns carrier lifetime, exceeding previous benchmarks by 2 orders of magnitude through meticulous Sn(IV) control. The nanocrystals demonstrate excellent colloidal stability, uniform monodispersity, and a distinct exciton peak. Central to these outcomes is our designed solid-liquid antioxidation suspension of tri-n-octylphosphine (TOP) and zerovalent tin (Sn(0)) that fully addresses the unique coexisting oxygen-driven and solvent-driven Sn oxidation mechanisms in Sn perovskite nanocrystal synthesis. We uncover the largely undervalued function of TOP in mitigating oxygen-driven Sn oxidation and introduce Sn(0) powder to generate a synergistic antioxidation function with TOP, significantly reducing Sn(IV)-induced defects and distortions and contributing to enhanced optoelectronic properties. Strikingly, this approach also profoundly impacts inorganic Sn-Pb perovskite nanocrystals, boosting lifetimes by 2 orders of magnitude and increasing photoluminescence quantum yield over 100-fold to 35%. Our findings illuminate the potential of Sn-based nanocrystals for optoelectronic applications.

Recent Progress of Low-Toxicity Poor-Lead All-Inorganic Perovskite Solar Cells

Organic-inorganic hybrid perovskite solar cells (PSCs) have achieved an impressive certified efficiency of 25.7%, which is comparatively higher than that of commercial silicon solar cells (23.3%), showing great potential toward commercialization. However, the low stability and high toxicity due to the presence of volatile organic components and toxic metal lead in the perovskites pose significant challenges. To obtain robust and low-toxicity PSCs, substituting organic cations with pure inorganic cations, and partially or fully replacing the toxic Pb with environmentally benign metals, is one of the promising methods. To date, continuous efforts have been made toward the construction of highly performed low-toxicity inorganic PSCs with astonishing breakthroughs. This review article provides an overview of recent progress in inorganic PSCs in terms of lead-reduced and lead-free compositions. The physical properties of poor-lead all-inorganic perovskites are discussed to unveil the major challenges in this field. Then, it reports notable achievements for the experimental studies to date to figure out feasible methods for efficient and stable poor-lead all-inorganic PSCs. Finally, a discussion of the challenges and prospects for poor-lead all-inorganic PSCs in the future is presented.

Enhancement of efficiency in CsSnI3 based perovskite solar cell by numerical modeling of graphene oxide as HTL and ZnMgO as ETL

Perovskite photovoltaics have an immense contribution toward the all-round development of the solar cell. Apart from the flexibility, stability, and high efficiency, more stress has been given to using lead-free as well as eco-friendly, inexpensive materials in the fabrication of PSC devices. The utilization of non-volatile material, such as cesium tin iodide (CsSnI3), can be proposed for designing the PSC device, which not only makes it eco-friendly but also offers better optoelectronic characteristics due to its smaller bandgap of 1.27 eV. The inclusion of Sn in the perovskite material also functions as an increment in the stability of the perovskite. In the present simulation, CsSnI3 is used as an active absorber layer while the ZnMgO is used as an ETL for a cost-effective nature. Similarly, graphene oxide (GO) is used as HTL for a superior collection of holes. The comprehensive numerical modeling of the ZnMgO can be utilized in solar cell designing with appropriate CsSnI3 thickness, working temperature, total defectivity, and resistance impact, respectively. The presently simulated device offers an excellent efficiency of 17.37 % with CsSnI3-based PSC. These results of the study also show an effective route to develop highly efficient lead-free PSC devices.

Recoverable Flexible Perovskite Solar Cells for Next-Generation Portable Power Sources

Flexible perovskite solar cells (FPSCs) with excellent recoverability show a wide range of potential applications in portable power sources. The recoverability of FPSCs requires outstanding bendability of each functional layer, including the flexible substrates, electrodes, perovskite light absorbers, and charge transport materials. This review highlights the recent progress and practical applications of high-recoverability FPSCs, and illustrates the routes toward improvement of the recoverability and environmental stability through the choice of flexible substrates and the preparation of high-quality perovskite films, as well as the optimization of charge-selective contacts. In addition, we explore the intrinsic properties of each functional layer from the physical perspective and analyze how to select suitable functional layers. Additionally, some effective strategies are summarized, including material modification engineering of selective contacts, additives and interface engineering of interlayers, which can release mechanical stress and increase the power-conversion efficiency (PCE) and recoverability of the FPSCs. The challenges of making high-performance FPSCs with long-term stability and high recoverability are discussed. Finally, future applications and perspectives for FPSCs are discussed, aiming to promote more extensive commercialization processes for lightweight and durable FPSCs.

A Comprehensive Study of CsSnI3-Based Perovskite Solar Cells with Different Hole Transporting Layers and Back Contacts

By an abrupt rise in the power conservation efficiency (PCE) of perovskite solar cells (PSCs) within a short span of time, the instability and toxicity of lead were raised as major hurdles in the path toward their commercialization. The usage of an inorganic lead-free CsSnI3-based halide perovskite offers the advantages of enhancing the stability and degradation resistance of devices, reducing the cost of devices, and minimizing the recombination of generated carriers. The simulated standard device using a 1D simulator like solar cell capacitance simulator (SCAPS) with Spiro-OMeTAD hole transporting layer (HTL) at perovskite thickness of 330 nm is in good agreement with the previous experimental result (12.96%). By changing the perovskite thickness and work operating temperature, the maximum efficiency of 18.15% is calculated for standard devices at a perovskite thickness of 800 nm. Then, the effects of replacement of Spiro-OMeTAD with other HTLs including Cu2O, CuI, CuSCN, CuSbS2, Cu2ZnSnSe4, CBTS, CuO, MoS2, MoOx, MoO3, PTAA, P3HT, and PEDOT:PSS on photovoltaic characteristics were calculated. The device with Cu2ZnSnSe4 hole transport in the same condition shows the highest efficiency of 21.63%. The back contact also changed by considering different metals such as Ag, Cu, Fe, C, Au, W, Ni, Pd, Pt, and Se. The outcomes provide valuable insights into the efficiency improvement of CsSnI3-based PSCs by Spiro-OMeTAD substitution with other HTLs, and back-contact modification upon the comprehensive analysis of 120 devices with different configurations.

Surface Modification in CsPb0.5Sn0.5I2Br Inorganic Perovskite Solar Cells: Effects of Bifunctional Dipolar Molecules on Photovoltaic Performance

Inorganic tin-lead binary perovskites have piqued the interest of researchers as effective absorbers for thermally stable solar cells. However, the nonradiative recombination originating from the surface undercoordinated Sn²⁺ cations and the energetic offsets between different layers cause an excessive energy loss and deteriorate the perovskite device's performance. In this study, we investigated two thioamide derivatives that differ only in the polar part connected to their common benzene ring, namely, benzenecarbothioamide and 4-fluorophenylcarbothioamide (F-TBA). These two molecules were implemented as modifiers onto the inorganic tin-lead perovskite (CsPb_0.5Sn_0.5I₂Br) surface in the perovskite solar cells. Modifiers that carry C═S and NH₂ functional groups, equipped with lone electron pairs, can autonomously associate with surface Sn²⁺ through coordination and electrostatic attraction mechanisms. This interaction serves effectively to passivate the surface. In addition, due to the permanent dipole moment of the intermediate layer, an interfacial dipole field appears at the PCBM/CsPb_0.5Sn_0.5I₂Br interface, reducing the electron extraction potential barrier. Consequently, the planar solar cell with an ITO/PEDOT:PSS/CsPb_0.5Sn_0.5I₂Br/PCBM/BCP/Ag layered structure featuring an F-TBA surface post-treatment demonstrated a noteworthy power conversion efficiency of 14.01%. Simultaneously, after being stored for 1000 h in an inert atmosphere glovebox, the non-encapsulated CsPb_0.5Sn_0.5I₂Br solar cells managed to preserve 94% of their original efficiency.

Cs2TiI6 (Cs2TiIxBr6-x) Halide Perovskite Solar Cell and Its Point Defect Analysis

This work presents a comprehensive numerical study for designing a lead-free, all-inorganic, and high-performance solar cell based on Cs₂TiI₆ halide perovskite with all-inorganic carrier transport layers. A rigorous ab initio density-functional theory (DFT) calculation is performed to identify the electronic and optical properties of Cs₂TiI₆ and, upon extraction of the existing experimental data of the material, the cell is designed and optimized to the degree of practical feasibility. Consequently, a theoretical power conversion efficiency (PCE) of 21.17% is reported with inorganic TiO₂ and CuI as carrier transport layers. The calculated absorption coefficient of Cs₂TiI₆ reveals its enormous potential as an alternative low-bandgap material for different solar cell applications. Furthermore, the role of different point defects and the corresponding defect densities on cell performance are investigated. It is found that the possible point defects in Cs₂TiI₆ can form both the shallow and deep defect states, with deep defect states having a prominent effect on cell performance. For both defect states, the cell performance deteriorates significantly as the defect density increases, which signifies the importance of high-quality material processing for the success of Cs₂TiI₆-based perovskite solar cell technology.

Deep Insights into the Coupled Optoelectronic and Photovoltaic Analysis of Lead-Free CsSnI3 Perovskite-Based Solar Cell Using DFT Calculations and SCAPS-1D Simulations

CsSnI₃ is considered to be a viable alternative to lead (Pb)-based perovskite solar cells (PSCs) due to its suitable optoelectronic properties. The photovoltaic (PV) potential of CsSnI₃ has not yet been fully explored due to its inherent difficulties in realizing defect-free device construction owing to the nonoptimized alignment of the electron transport layer (ETL), hole transport layer (HTL), efficient device architecture, and stability issues. In this work, initially, the structural, optical, and electronic properties of the CsSnI₃ perovskite absorber layer were evaluated using the CASTEP program within the framework of the density functional theory (DFT) approach. The band structure analysis revealed that CsSnI₃ is a direct band gap semiconductor with a band gap of 0.95 eV, whose band edges are dominated by Sn 5s/5p electrons After performing the DFT analysis, we investigated the PV performance of a variety of CsSnI₃-based solar cell configurations utilizing a one-dimensional solar cell capacitance simulator (SCAPS-1D) with different competent ETLs such as IGZO, WS₂, CeO₂, TiO₂, ZnO, PCBM, and C₆₀. Simulation results revealed that the device architecture comprising ITO/ETL/CsSnI₃/CuI/Au exhibited better photoconversion efficiency among more than 70 different configurations. The effect of the variation in the absorber, ETL, and HTL thickness on PV performance was analyzed for the above-mentioned configuration thoroughly. Additionally, the impact of series and shunt resistance, operating temperature, capacitance, Mott-Schottky, generation, and recombination rate on the six superior configurations were evaluated. The J-V characteristics and the quantum efficiency plots for these devices are systematically investigated for in-depth analysis. Consequently, this extensive simulation with validation results established the true potential of CsSnI₃ absorber with suitable ETLs including ZnO, IGZO, WS₂, PCBM, CeO₂, and C₆₀ ETLs and CuI as HTL, paving a constructive research path for the photovoltaic industry to fabricate cost-effective, high-efficiency, and nontoxic CsSnI₃ PSCs.

Single-Crystal Nanowire Cesium Tin Triiodide Perovskite Solar Cell

This work reports for the first time a highly efficient single-crystal cesium tin triiodide (CsSnI₃ ) perovskite nanowire solar cell. With a perfect lattice structure, low carrier trap density (≈5 × 10¹⁰ cm^-3 ), long carrier lifetime (46.7 ns), and excellent carrier mobility (>600 cm² V^-1 s^-1 ), single-crystal CsSnI₃ perovskite nanowires enable a very attractive feature for flexible perovskite photovoltaics to power active micro-scale electronic devices. Using CsSnI₃ single-crystal nanowire in conjunction with highly conductive wide bandgap semiconductors as front-surface-field layers, an unprecedented efficiency of 11.7% under AM 1.5G illumination is achieved. This work demonstrates the feasibility of all-inorganic tin-based perovskite solar cells via crystallinity and device-structure improvement for the high-performance, and thus paves the way for the energy supply to flexible wearable devices in the future.

Simultaneous Suppression of p-Doping and Nonradiative Recombination via Barium Incorporation for Highly Efficient Tin Perovskites

High p-type self-doping and fast nonradiative recombination severely limit the optoelectronic performance of tin perovskites. Employing first-principles calculations, we show that incorporating barium (Ba) into the prototypical tin perovskite CsSnI₃ could enable simultaneous suppression of p-doping and nonradiative recombination. Ba acts as an energetically favorable donor and raises the Fermi level. This not only decreases the background hole concentration but also inhibits the formation of I vacancies that are the dominant nonradiative recombination centers, giving rise to an improvement of more than 2 orders of magnitude in carrier lifetime. Moreover, as the facile migration of I ions is basically a process assisted by I vacancies, Ba incorporation also suppresses the diffusion of I ions, which is beneficial to the enhancement of stability. The present study provides a promising strategy for developing high-performance tin perovskites.

Effect of aliovalent bismuth substitution on structure and optical properties of CsSnBr3

Aliovalent substitution of the B component in ABX₃ metal halides has often been proposed to modify the band gap and thus the photovoltaic properties, but details about the resulting structure have remained largely unknown. Here, we examine these effects in Bi-substituted CsSnBr₃. Powder X-ray diffraction (XRD) and solid-state ¹¹⁹Sn, ¹³³Cs and ²⁰⁹Bi nuclear magnetic resonance (NMR) spectroscopy were carried out to infer how Bi substitution changes the structure of these compounds. The cubic perovskite structure is preserved upon Bi-substitution, but with disorder in the B site occurring at the atomic level. Bi atoms are randomly distributed as they substitute for Sn atoms with no evidence of Bi segregation. The absorption edge in the optical spectra shifts from 1.8 to 1.2 eV upon Bi-substitution, maintaining a direct band gap according to electronic structure calculations. It is shown that Bi-substitution improves resistance to degradation by inhibiting the oxidation of Sn.

Sn-Based Perovskite Solar Cells towards High Stability and Performance

Recent years have witnessed rapid development in the field of tin-based perovskite solar cells (TPSCs) due to their environmental friendliness and tremendous potential in the photovoltaic field. Most of the high-performance PSCs are based on lead as the light-absorber material. However, the toxicity of lead and the commercialization raise concerns about potential health and environmental hazards. TPSCs can maintain all the optoelectronic properties of lead PSCs, as well as feature a favorable smaller bandgap. However, TPSCs tend to undergo rapid oxidation, crystallization, and charge recombination, which make it difficult to unlock the full potential of such perovskites. Here, we shed light on the most critical features and mechanisms affecting the growth, oxidation, crystallization, morphology, energy levels, stability, and performance of TPSCs. We also investigate the recent strategies, such as interfaces and bulk additives, built-in electric field, and alternative charge transport materials that are used to enhance the performance of the TPSCs. More importantly, we have summarized most of the recent best-performing lead-free and lead-mixed TPSCs. This review aims to help future research in TPSCs to produce highly stable and efficient solar cells.

A Bifunctional Carbazide Additive For Durable CsSnI3 Perovskite Solar Cells

Inorganic CsSnI₃ with low toxicity and a narrow bandgap is a promising photovoltaic material. However, the performance of CsSnI₃ perovskite solar cells (PSCs) is much lower than that of Pb-based and hybrid Sn-based (e.g., CsPbX₃ and CH(NH₂ )₂ SnX₃ ) PSCs, which may be attributed to its poor film-forming property and the deep traps induced by Sn⁴⁺ . Here, a bifunctional additive carbazide (CBZ) is adapted to deposit a pinhole-free film and remove the deep traps via two-step annealing. The lone electrons of the NH₂ and CO units in CBZ can coordinate with Sn²⁺ to form a dense film with large grains during the phase transition at 80 °C. The decomposition of CBZ can reduce Sn⁴⁺ to Sn²⁺ during annealing at 150 °C to remove the deep traps. Compared with the control device (4.12%), the maximum efficiency of the CsSnI₃ :CBZ PSC reaches 11.21%, which is the highest efficiency of CsSnI₃ PSC reported to date. A certified efficiency of 10.90% is obtained by an independent photovoltaic testing laboratory. In addition, the unsealed CsSnI₃ :CBZ devices maintain initial efficiencies of ≈100%, 90%, and 80% under an inert atmosphere (60 days), standard maximum power point tracking (650 h at 65 °C), and ambient air (100 h), respectively.

Lead-Free Perovskite Homojunction-Based HTM-Free Perovskite Solar Cells: Theoretical and Experimental Viewpoints

Simplifying the design of lead-free perovskite solar cells (PSCs) has drawn a lot of interest due to their low manufacturing cost and relative non-toxic nature. Focus has been placed mostly on reducing the toxic lead element and eliminating the requirement for expensive hole transport materials (HTMs). However, in terms of power conversion efficiency (PCE), the PSCs using all charge transport materials surpass the environmentally beneficial HTM-free PSCs. The low PCEs of the lead-free HTM-free PSCs could be linked to poorer hole transport and extraction as well as lower light harvesting. In this context, a lead-free perovskite homojunction-based HTM-free PSC was investigated, and the performance was then assessed using a Solar Cell Capacitance Simulator (SCAPS). A two-step method was employed to fabricate lead-free perovskite homojunction-based HTM-free PSCs in order to validate the simulation results. The simulation results show that high hole mobility and a narrow band gap of cesium tin iodide (CsSnI₃) boosted the hole collection and absorption spectrum, respectively. Additionally, the homojunction's built-in electric field, which was identified using SCAPS simulations, promoted the directed transport of the photo-induced charges, lowering carrier recombination losses. Homojunction-based HTM-free PSCs having a CsSnI₃ layer with a thickness of 100 nm, defect density of 10¹⁵ cm^-3, and interface defect density of 10¹⁸ cm^-3 were found to be capable of delivering high PCEs under a working temperature of 300 K. When compared to formamidinium tin iodide (FASnI₃)-based devices, the open-circuit voltage (V_oc), short-circuit density (J_sc), fill factor (FF), and PCE of FASnI₃/CsSnI₃ homojunction-based HTM-free PSCs were all improved from 0.66 to 0.78 V, 26.07 to 27.65 mA cm^-2, 76.37 to 79.74%, and 14.62 to 19.03%, respectively. In comparison to a FASnI₃-based device (PCE = 8.94%), an experimentally fabricated device using homojunction of FASnI₃/CsSnI₃ performs better with V_oc of 0.84 V, J_sc of 22.06 mA cm^-2, FF of 63.50%, and PCE of 11.77%. Moreover, FASnI₃/CsSnI₃-based PSC is more stable over time than its FASnI₃-based counterpart, preserving 89% of its initial PCE. These findings provide promising guidelines for developing highly efficient and environmentally friendly HTM-free PSCs based on perovskite homojunction.

Remarkable Stability and Optoelectronic Properties of an All-Inorganic CsSn0.5Ge0.5I3 Perovskite Solar Cell

Sn-Ge mixed perovskites have been proposed as promising lead-free candidates in the photovoltaics (PV) field. In this work, we discovered a stable P1 phase Sn-Ge mixed structure (CsSn_0.5Ge_0.5I₃) with an appropriate band gap value of 1.19 eV, which manifests its unique structural stability and physics properties. The thermodynamic stability of this mixed structure under different growth conditions and all possible native defects are depicted in detail. The formation energies and dominant native point defects indicate that P1 phase CsSn_0.5Ge_0.5I₃ exhibits unipolar self-doping behavior (p-type conductivity) and good defect tolerance while the growth condition changes. In addition, the calculation of light absorption confirmed that the P1 phase has a higher light absorption coefficient than that of MAPbI₃ in the visible light range, showing excellent light absorption. Our work not only provides theoretical guidance for unraveling the unusual structural stability of Sn-Ge mixed perovskites, but also offers a useful scheme to modulate the stability and optoelectronic properties of Ge-based perovskites through alloy engineering.

Biaxial strain improving carrier mobility for inorganic perovskite:ab initioBoltzmann transport equation

Inorganic halide perovskites have attracted interest due to their high efficiency and low cost. Considering the uncertainty of experimental measurements, it was important to predict the upper limit of carrier mobility. In this study, theab initioBoltzmann transport equation, including all electron-phonon interactions, was used to accurately predict the mobilities of CsPbI₃, CsSnI₃, CsPbBr₃, and CsSnBr₃. Using the iterative Boltzmann transport equation (IBTE), the calculated mobility for CsPbI₃isµ_e= 512/µ_h= 379 cm² V^-1 s^-1, and Sn-based perovskite exhibited high hole mobility. The longitudinal optical phonons associated with the stretching between halogen anions and divalent metal cations were revealed to be the dominant scattering source for the carriers. Furthermore, the effect of biaxial strain on mobility was investigated. We observed that biaxial compressive strain could improve the mobility of CsPbI₃and CsPbBr₃. Surprisingly, under a compressive strain of-2%, the mobilities of CsPbI₃using IBTE approach were improved toµ_e= 1176/µ_h= 936 cm² V^-1 s^-1. It was revealed that the compressive strain could decrease the effective mass of CsPbI₃and CsPbBr₃.

Defect Passivation on Lead-Free CsSnI3 Perovskite Nanowires Enables High-Performance Photodetectors with Ultra-High Stability

In recent years, Pb-free CsSnI₃ perovskite materials with excellent photoelectric properties as well as low toxicity are attracting much attention in photoelectric devices. However, deep level defects in CsSnI₃, such as high density of tin vacancies, structural deformation of SnI₆^- octahedra and oxidation of Sn²⁺ states, are the major challenge to achieve high-performance CsSnI₃-based photoelectric devices with good stability. In this work, defect passivation method is adopted to solve the above issues, and the ultra-stable and high-performance CsSnI₃ nanowires (NWs) photodetectors (PDs) are fabricated via incorporating 1-butyl-2,3-dimethylimidazolium chloride salt (BMIMCl) into perovskites. Through materials analysis and theoretical calculations, BMIM⁺ ions can effectively passivate the Sn-related defects and reduce the dark current of CsSnI₃ NW PDs. To further reduce the dark current of the devices, the polymethyl methacrylate is introduced, and finally, the dual passivated CsSnI₃ NWPDs show ultra-high performance with an ultra-low dark current of 2 × 10^-11 A, a responsivity of up to 0.237 A W^-1, a high detectivity of 1.18 × 10¹² Jones and a linear dynamic range of 180 dB. Furthermore, the unpackaged devices exhibit ultra-high stability in device performance after 60 days of storage in air (25 °C, 50% humidity), with the device performance remaining above 90%.

Sn-Based Perovskite Halides for Electronic Devices

Because of its less toxicity and electronic structure analogous to that of lead, tin halide perovskite (THP) is currently one of the most favorable candidates as an active layer for optoelectronic and electric devices such as solar cells, photodiodes, and field-effect transistors (FETs). Promising photovoltaics and FETs performances have been recently demonstrated because of their desirable electrical and optical properties. Nevertheless, THP's easy oxidation from Sn²⁺ to Sn⁴⁺ , easy formation of tin vacancy, uncontrollable film morphology and crystallinity, and interface instability severely impede its widespread application. This review paper aims to provide a basic understanding of THP as a semiconductor by highlighting the physical structure, energy band structure, electrical properties, and doping mechanisms. Additionally, the key chemical instability issues of THPs are discussed, which are identified as the potential bottleneck for further device development. Based on the understanding of the THPs properties, the key recent progress of THP-based solar cells and FETs is briefly discussed. To conclude, current challenges and perspective opportunities are highlighted.

Dopamine Hydrochloride-Assisted Synergistic Modulation of Perovskite Crystallization and Sn2+ Oxidation for Efficient and Stable Lead-free Solar Cells

Tin perovskites have received great concern in solar cell research owing to their favorable optoelectronic performance and environmental friendliness. However, due to their poor crystallization and easy oxidation, the performance improvement for tin-based perovskite solar cells (TPSCs) is rather challenging. Herein, reductive 3-hydroxytyramine hydrochloride (DACl) with NH₂·HCl and phenol groups as co-additives with SnF₂ is added into the precursor to modulate perovskite crystallization and inhibit Sn²⁺ oxidation for high-performance TPSCs. The Lewis base group of NH₂ HCl in DACl could bind to perovskite lattices to modulate the crystallization with suppressed defects in the bulk and grain boundary, whereas reductive phenol groups effectively constrain the Sn²⁺ oxidation. Moreover, the undissociated DACl decreases the supersaturated concentration of tin perovskite solution and creates a pre-nucleation site for rapid nucleation to further regulate crystallization. Consequently, the DACl-derived TPSCs achieve a high power-conversion efficiency (PCE) that reaches up to 11%. More impressively, the device remains at 84% of the initial PCE after full-sun illumination in N₂ over 600 h without being encapsulated. This DACl-based synergistic modulation of a lead-free perovskite demonstrates a feasible approach using one molecule with different functional groups to manipulate crystallization, Sn²⁺ oxidation, and defect reparation of tin perovskite films, providing a critical guideline for constructing high-quality perovskites by multifunctional additives with high photovoltaic performance.

Vacuum-Deposited Cesium Tin Iodide Thin Films with Tunable Thermoelectric Properties

Most current thermoelectric materials have important drawbacks, such as toxicity, scarceness, and peak operating temperatures above 300 °C. Herein, we report the thermoelectric properties of different crystalline phases of Sn-based perovskite thin films. The 2D phase, Cs₂SnI₄, is obtained through vacuum thermal deposition and easily converted into the black β phase of CsSnI₃ (B-β CsSnI₃) by annealing at 150 °C. B-β CsSnI₃ is a p-type semiconductor with a figure of merit (ZT) ranging from 0.021 to 0.033 for temperatures below 100 °C, which makes it a promising candidate to power small electronic devices such as wearable sensors which may be interconnected in the so-called Internet of Things. The B-β phase is stable in nitrogen, whereas it spontaneously oxidizes to Cs₂SnI₆ upon exposure to air. Cs₂SnI₆ shows a negative Seebeck coefficient and an ultralow thermal conductivity. However, the ZT values are 1 order of magnitude lower than for B-β CsSnI₃ due to a considerably lower electrical conductivity.

Stable Lead-Free Tin Halide Perovskite with Operational Stability >1200 h by Suppressing Tin(II) Oxidation

Sn-based perovskites are the most promising alternative materials for Pb-based perovskites to address the toxicity problem of lead. However, the development of Sn^II -based perovskites has been hindered by their extreme instability. Here, we synthesized efficient and stable lead-free Cs₄ SnBr₆ perovskite by using SnF₂ as tin source instead of easily oxidized SnBr₂ . The SnF₂ configures a fluorine-rich environment, which can not only suppress the oxidation of Sn²⁺ in the synthesis, but also construct chemically stable Sn-F coordination to hinder the electron transfer from Sn²⁺ to oxygen within the long-term operation process. The SnF₂ -derived Cs₄ SnBr₆ perovskite shows a high photoluminescence quantum yield of 62.8 %, and excellent stability against oxygen, moisture, and light radiation for 1200 h, representing one of the most stable lead-free perovskites. The results pave a new pathway to enhance the optical properties and stability of lead-free perovskite for high-performance light emitters.

Quasi-2D Bilayer Surface Passivation for High Efficiency Narrow Bandgap Perovskite Solar Cells

The combination of comprehensive surface passivation and effective interface carriers transfer plays a critical role in high-performance perovskite solar cells. A 2D structure is an important approach for surface passivation of perovskite film, however, its large band gap could compromise carrier transfer. Herein, we synthesize a new molecule 2-thiopheneethylamine thiocyanate (TEASCN) for the construction of bilayer quasi-2D structure precisely on a tin-lead mixed perovskite surface. This bilayer structure can passivate the perovskite surface and ensure effective carriers transfer simultaneously. As a result, the open-circuit voltage (V_oc ) of the device is increased without sacrificing short-circuit current density (J_sc ), giving rise to a high certified efficiency from a credible third-party certification of narrow band gap perovskite solar cells. Furthermore, theoretical simulation indicates that the inclusion of TEASCN makes the bilayer structure thermodynamically more stable, which provides a strategy to tailor the number of layers of quasi-2D perovskite structures.

Low-Temperature Solution-Processed Cu2AgBiI6 Films for High Performance Photovoltaics and Photodetectors

Recently, Cu₂AgBiI₆ semiconductor has been investigated due to the high absorption coefficient, direct bandgap, and low exciton binding energy, which are promising for eco-friendly photoelectric devices. Herein, pyridine is introduced as solvent additive to completely dissolve the solutes and form clear Cu₂AgBiI₆ precursor solution, which results in high-quality films and may provide a general approach for high-quality film growth of other bismuth-based metal halide semiconductors. In addition, the electronic structure of Cu₂AgBiI₆ has been demonstrated for the first time and shows an intrinsically weak n-type semiconductor. Furthermore, phenethylammonium iodide for surface passivation significantly improves the film quality, slightly n-dopes the material, and shifts up the band level. Finally, the photovoltaics and photodetector performance for n-i-p planar heterojunction devices have been investigated. The efficiency is up to 1%, highest for Cu₂AgBiI₆ solar cells and comparable with other lead-free bismuth based metal halide solar cells. Moreover, photodetectors with fast speed of rising and decaying time, especially the excellent specific photodetectivity of ∼10¹² Jones within the wavelength of ∼350-600 nm, are achieved, which paves an alternative and promising strategy for the design of future commercial photodetectors that are self-powered, stable, nontoxic, etc.

High-performance hysteresis-free perovskite transistors through anion engineering

Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI₃) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm² V^-1 s^-1, current on/off ratios exceeding 10⁷, and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits.

Bio-inspired strategies for next-generation perovskite solar mobile power sources

Smart electronic devices are becoming ubiquitous due to many appealing attributes including portability, long operational time, rechargeability and compatibility with the user-desired form factor. Integration of mobile power sources (MPS) based on photovoltaic technologies with smart electronics will continue to drive improved sustainability and independence. With high efficiency, low cost, flexibility and lightweight features, halide perovskite photovoltaics have become promising candidates for MPS. Realization of these photovoltaic MPS (PV-MPS) with unconventionally extraordinary attributes requires new 'out-of-box' designs. Natural materials have provided promising designing solutions to engineer properties under a broad range of boundary conditions, ranging from molecules, proteins, cells, tissues, apparatus to systems in animals, plants, and humans optimized through billions of years of evolution. Applying bio-inspired strategies in PV-MPS could be biomolecular modification on crystallization at the atomic/meso-scale, bio-structural duplication at the device/system level and bio-mimicking at the functional level to render efficient charge delivery, energy transport/utilization, as well as stronger resistance against environmental stimuli (e.g., self-healing and self-cleaning). In this review, we discuss the bio-inspired/-mimetic structures, experimental models, and working principles, with the goal of revealing physics and bio-microstructures relevant for PV-MPS. Here the emphasis is on identifying the strategies and material designs towards improvement of the performance of emerging halide perovskite PVs and strategizing their bridge to future MPS.

Confronting the Air Instability of Cesium Tin Halide Perovskites by Metal Ion Incorporation

Tin halide perovskite's potential as a photovoltaic absorber has not been fully realized to date, largely due to its instability in ambient air. Here, we demonstrate by both experiments and simulations that the air instability of black-phase cesium tin iodide perovskite (γ-CsSnI₃) could be greatly lessened by a controlled incorporation of bismuth (Bi) ions into the crystal lattice. Hall effect measurements on films of γ-CsSnI₃ suggest the unwanted formation of a tin vacancy and p-type self-doping can be effectively suppressed by the Bi incorporation. Structural and optical results indicate that the Bi incorporation markedly enhances the air stability by impeding the direct conversion of γ-CsSnI₃ to zero-dimensional Cs₂SnI₆. By using a stochastic surface walking (SSW) method integrating neural network (NN) potential and density functional theory (DFT), it is revealed that the remarkable enhanced stability could be attributed to a combination of factors originating from lattice-contraction-induced strain, a suppressed tin vacancy, and an increased energy barrier for the transformation of γ-CsSnI₃ to Cs₂SnI₆. This study provides physical insights into the stabilization mechanism of tin perovskites by heterovalent B-site engineering, paving the way for realizing stable and efficient lead-free perovskite photovoltaics.

Dendritic CsSnI3 for Efficient and Flexible Near-Infrared Perovskite Light-Emitting Diodes

All-inorganic and lead-free CsSnI₃ is emerging as one of the most promising candidates for near-infrared perovskite light-emitting diodes (NIR Pero-LEDs), which find practical applications including facial recognition, biomedical apparatus, night vision camera, and Light Fidelity. However, in the CsSnI₃ -based Pero-LEDs, the holes injection is significantly higher than that of electrons, resulting in unbalanced charge injection, undesired exciton dissipation, and poor device performance. Herein, it is proposed to manage charge injection and recombination behavior by tuning the interface area of perovskite and charge-transporter. A dendritic CsSnI₃ structure is prepared on the hole-transporter, only making a bottom contact with the hole-transporter and exposing all other available crystal surfaces to the electron-transporter. In other words, the interface area of perovskite/electron-transporter is significantly higher than that of perovskite/hole-transporter. Moreover, the embedding interface of perovskite/electron-transporter can spatially confine holes and electrons, increasing the radiation recombination. By taking advantage of the dendritic structure, efficient lead-free NIR Pero-LEDs are achieved with a record external quantum efficiency (EQE) of 5.4%. More importantly, the dendritic structure shows great superiorities in flexible devices, for there is almost no morphology change after 2000-cycles of bends, and the fabricated Pero-LEDs can keep 93.4% of initial EQEs after 50-cycles of bends.

Low-Dimensional Inorganic Tin Perovskite Solar Cells Prepared by Templated Growth

The manipulation of the dimensionality and nanostructures based on the precise control of the crystal growth kinetics boosts the flourishing development of perovskite optoelectronic materials and devices. Herein, a low-dimensional inorganic tin halide perovskite, CsSnBrI_2-x (SCN)_x , with a mixed 2D and 3D structure is fabricated. A kinetic study indicates that Sn(SCN)₂ and phenylethylamine hydroiodate can form a 2D perovskite structure that acts as a template for the growth of the 3D perovskite CsSnBrI_2-x (SCN)_x . The film shows an out-of-plane orientation and a large grain size, giving rise to reduced defect density, superior thermostability, and oxidation resistance. A solar cell based on this low-dimensional film reaches a power conversion efficiency of 5.01 %, which is the highest value for CsSnBr_x I_3-x perovskite solar cells. Furthermore, the device shows enhanced stability in ambient air.

Different structural evolutions of inorganic perovskite CsGeI3

The structural evolution of CsGeI₃ and octahedral distortion in CsSn_xGe_1−xI₃ perovskites.