1
|
Wang B, Yuan M, Liu J, Zhang X, Liu J, Yang J, Gao L, Zhang J, Tang J, Lan X. Synergism in Binary Nanocrystals Enables Top-Illuminated HgTe Colloidal Quantum Dot Short-Wave Infrared Imager. NANO LETTERS 2024; 24:9583-9590. [PMID: 39041791 DOI: 10.1021/acs.nanolett.4c02235] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
Thanks to their tunable infrared absorption, solution processability, and low fabrication costs, HgTe colloidal quantum dots (CQDs) are promising for optoelectronic devices. Despite advancements in device design, their potential for imaging applications remains underexplored. For integration with Si-based readout integrated circuits (ROICs), top illumination is necessary for simultaneous light absorption and signal acquisition. However, most high-performing traditional HgTe CQD photodiodes are p-on-n stack and bottom-illuminated. Herein, we report top-illuminated inverted n-on-p HgTe CQD photodiodes using a robust p-type CQD layer and a thermally evaporated Bi2S3 electron transport layer. The p-type CQD solid is achieved by exploring the synergism in binary HgTe and Ag2Te CQDs. These photodetectors show a room-temperature detectivity of 3.4 × 1011 jones and an EQE of ∼44% at ∼1.7 μm wavelength, comparable to the p-on-n HgTe CQD photodiodes. A top-illuminated HgTe CQD short-wave infrared imager (640 × 512 pixels) was fabricated, demonstrating successful infrared imaging.
Collapse
Affiliation(s)
- Binbin Wang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Mohan Yuan
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Jing Liu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Xingchen Zhang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Jing Liu
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Ji Yang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- School of Integrated Circuit, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Jianbing Zhang
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- School of Integrated Circuit, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| | - Jiang Tang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| | - Xinzheng Lan
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| |
Collapse
|
2
|
Yu M, Yang J, Zhang X, Yuan M, Zhang J, Gao L, Tang J, Lan X. In-Synthesis Se-Stabilization Enables Defect and Doping Engineering of HgTe Colloidal Quantum Dots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311830. [PMID: 38501495 DOI: 10.1002/adma.202311830] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Revised: 02/25/2024] [Indexed: 03/20/2024]
Abstract
Colloidal Quantum Dots (CQDs) of mercury telluride (HgTe) hold particular appeal for infrared photodetection due to their widely tunable infrared absorption and good compatibility with silicon electronics. While advances in surface chemistry have led to improved CQD solids, the chemical stability of HgTe material is not fully emphasized. In this study, it is aimed to address this issue and identifies a Se-stabilization strategy based on the surface coating of Se on HgTe CQDs via engineering in the precursor reactivity. The presence of Se-coating enables HgTe CQDs with improved colloidal stability, passivation, and enhanced degree of freedom in doping tuning. This enables the construction of optimized p-i-n HgTe CQD infrared photodetectors with an ultra-low dark current 3.26 × 10-6 A cm⁻2 at -0.4 V and room-temperature specific detectivity of 5.17 × 1011 Jones at wavelength ≈2 um, approximately one order of magnitude improvement compared to that of the control device. The stabilizing effect of Se is well preserved in the thin film state, contributing to much improved device stability. The in-synthesis Se-stabilization strategy highlights the importance of the chemical stability of materials for the construction of semiconductor-grade CQD solids and may have important implications for other high-performance CQD optoelectronic devices.
Collapse
Affiliation(s)
- Mengxuan Yu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Ji Yang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Xingchen Zhang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Mohan Yuan
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jianbing Zhang
- School of Integrated Circuit, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Yuexing Road, Shenzhen, 518057, P. R. China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Yuexing Road, Shenzhen, 518057, P. R. China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, 325035, P. R. China
| | - Jiang Tang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, 325035, P. R. China
| | - Xinzheng Lan
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, 325035, P. R. China
| |
Collapse
|
3
|
Xia K, Gao XD, Fei GT, Xu SH, Liang YF, Qu XX. High-Performance Visible to Mid-Infrared Photodetectors Based on HgTe Colloidal Quantum Dots under Room Temperature. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38669621 DOI: 10.1021/acsami.4c00641] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/28/2024]
Abstract
HgTe colloidal quantum dots (CQDs) are one of few materials that can realize near-to-midwave infrared photodetection. And the quality of HgTe CQD directly affects the performance of photodetection. In this work, we optimize the method of synthesizing HgTe CQDs to reduce the defect concentration, therefore improving the photoelectric properties. The photodetector based on HeTe CQD can respond to the light from the visible to mid-infrared band. Notably, a photoresponse to 4000 nm light at room temperature is realized. The responsivity and detectivity are 90.6 mA W-1 and 6.9 × 107 Jones under 1550 nm light illumination, which are better than these of most reported HgTe CQD photodetectors. The response speed reaches a magnitude of microseconds with a rising time of τr = 1.9 μs and a falling time of τf = 1.5 μs at 10 kHz under 1550 nm light illumination.
Collapse
Affiliation(s)
- Kai Xia
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
- University of Science and Technology of China, Hefei, Anhui 230026, PR China
| | - Xu Dong Gao
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
| | - Guang Tao Fei
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
| | - Shao Hui Xu
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
| | - Yi Fei Liang
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
- University of Science and Technology of China, Hefei, Anhui 230026, PR China
| | - Xiao Xuan Qu
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, PR China
- University of Science and Technology of China, Hefei, Anhui 230026, PR China
| |
Collapse
|
4
|
Xue X, Hao Q, Chen M. Very long wave infrared quantum dot photodetector up to 18 μm. LIGHT, SCIENCE & APPLICATIONS 2024; 13:89. [PMID: 38609412 PMCID: PMC11014860 DOI: 10.1038/s41377-024-01436-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2023] [Revised: 03/15/2024] [Accepted: 03/20/2024] [Indexed: 04/14/2024]
Abstract
Colloidal quantum dots (CQDs) are of interest for optoelectronic devices because of the possibility of high-throughput solution processing and the wide energy gap tunability from ultraviolet to infrared wavelengths. People may question about the upper limit on the CQD wavelength region. To date, although the CQD absorption already reaches terahertz, the practical photodetection wavelength is limited within mid-wave infrared. To figure out challenges on CQD photoresponse in longer wavelength, would reveal the ultimate property on these nanomaterials. What's more, it motivates interest in bottom-up infrared photodetection with less than 10% cost compared with epitaxial growth semiconductor bulk. In this work, developing a re-growth method and ionic doping modification, we demonstrate photodetection up to 18 μm wavelength on HgTe CQD. At liquid nitrogen temperature, the responsivity reaches 0.3 A/W and 0.13 A/W, with specific detectivity 6.6 × 108 Jones and 2.3 × 109 Jones for 18 μm and 10 μm CQD photoconductors, respectively. This work is a step toward answering the general question on the CQD photodetection wavelength limitation.
Collapse
Affiliation(s)
- Xiaomeng Xue
- School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, China
- Westlake Institute for Optoelectronics, Fuyang, Hangzhou, 311421, China
| | - Qun Hao
- School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, China
- Physics Department, Changchun University of Science and Technology, Changchun, 130022, China
| | - Menglu Chen
- School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, China.
- Westlake Institute for Optoelectronics, Fuyang, Hangzhou, 311421, China.
- Physics Department, Changchun University of Science and Technology, Changchun, 130022, China.
| |
Collapse
|
5
|
Yang H, Zhang Q, Chang R, Wu Z, Shen H. Understanding the Growth Mechanism of HgTe Colloidal Quantum Dots through Bilateral Injection. Inorg Chem 2024; 63:6231-6238. [PMID: 38529948 DOI: 10.1021/acs.inorgchem.3c04511] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
As potential low-cost alternatives of traditional bulk HgCdTe crystals, HgTe colloidal quantum dots (CQDs) synthesized through reactions between HgCl2 and trioctylphosphine-telluride in hot oleylamine have shown promising performances in mid-wave infrared photodetectors. Tetrapodic or tetrahedral HgTe CQDs have been obtained by tuning the reaction conditions such as temperature, reaction time, concentrations, and ratios of the two precursors. However, the principles governing the growth dynamics and the mechanism behind the transitions between tetrapodic and tetrahedral HgTe CQDs have not been sufficiently understood. In this work, synthesis of HgTe CQDs through bilateral injection is introduced to study the growth mechanism. It suggests that tetrahedral HgTe CQDs usually result from the breaks of tetrapodic HgTe CQDs after their legs grow thick enough. The fundamental factor determining whether the growth makes their legs longer or thicker is the effective concentration of the Te precursor during the growth, rather than temperature, Hg-rich environment, or reactivity of precursors. A chemical model is proposed to illustrate the principles governing the growth dynamics, which provides valuable guidelines for tuning the material properties of HgTe CQDs according to the needs of applications.
Collapse
Affiliation(s)
- Hao Yang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng 475004, China
| | - Qiong Zhang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng 475004, China
| | - Ruiguang Chang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng 475004, China
| | - Zhenghui Wu
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng 475004, China
| | - Huaibin Shen
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng 475004, China
| |
Collapse
|
6
|
Xia K, Fei GT, Xu SH, Gao XD, Liang YF. Hot-Injection Synthesis of HgTe Nanoparticles: Shape Control and Growth Mechanisms. Inorg Chem 2023; 62:13632-13638. [PMID: 37552842 DOI: 10.1021/acs.inorgchem.3c02030] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/10/2023]
Abstract
Understanding the growth mechanisms of HgTe nanoparticles (NPs) with varied shapes is crucial for their applications in infrared photodetection. Here, we investigated the growth mechanisms of HgTe NPs with nanorod, sphere, and tetrahedral shapes in depth. The HgTe NPs with a nanorod shape are obtained at low reaction temperatures and formed by breaking tetrapod branches, while HgTe NPs with sphere and tetrahedron shapes have been further achieved at increased reaction temperatures. The systematic crystal analyses demonstrate this effective shape control is related to the synergic effect among the anisotropic passivation of oleylamine, surface free energy, and reaction temperatures. Our findings have deepened the understanding of shape control of the HgTe NPs and inspired a growing passion in the design and engineering of infrared photodetectors using HgTe NPs.
Collapse
Affiliation(s)
- Kai Xia
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, P. R. China
- University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Guang Tao Fei
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, P. R. China
| | - Shao Hui Xu
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, P. R. China
| | - Xu Dong Gao
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, P. R. China
| | - Yi Fei Liang
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, P. R. China
- University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| |
Collapse
|
7
|
Qin Y, Guo T, Liu J, Lin T, Wang J, Chu J. Colloidal Quantum Dots in Very-Long-Wave Infrared Detection: Progress, Challenges, and Opportunities. ACS OMEGA 2023; 8:19137-19144. [PMID: 37305230 PMCID: PMC10249132 DOI: 10.1021/acsomega.3c00403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Accepted: 04/19/2023] [Indexed: 06/13/2023]
Abstract
The very long wave infrared (VLWIR) is an electromagnetic wave with a wavelength range of 15-30 μm, which plays an important role in missile defense and weather monitoring. This paper briefly introduces the development of intraband absorption of colloidal quantum dots (CQDs) and investigates the possibility of using CQDs to produce VLWIR detectors. We calculated the detectivity of CQDs for VLWIR. The results show that the detectivity is affected by parameters such as quantum dot size, temperature, electron relaxation time, and distance between quantum dots. The theoretical derivation results, combined with the current development status, show that the detection of VLWIR by CQDs is still in the theoretical stage.
Collapse
Affiliation(s)
- Yilu Qin
- School of Physical Science and Technology, Shanghai Tech University, 393 Middle Huaxia Road, Shanghai 201210, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Tianle Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Jingjing Liu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Jianlu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- Frontier Institute of Chip and System, Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai 200438, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Hangzhou 330106, China
| | - Junhao Chu
- School of Physical Science and Technology, Shanghai Tech University, 393 Middle Huaxia Road, Shanghai 201210, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| |
Collapse
|
8
|
Tian Y, Luo H, Chen M, Li C, Kershaw SV, Zhang R, Rogach AL. Mercury chalcogenide colloidal quantum dots for infrared photodetection: from synthesis to device applications. NANOSCALE 2023; 15:6476-6504. [PMID: 36960839 DOI: 10.1039/d2nr07309a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Commercial infrared (IR) photodetectors based on epitaxial growth inorganic semiconductors, e.g. InGaAs and HgCdTe, suffer from high fabrication cost, poor compatibility with silicon integrated circuits, rigid substrates and bulky cooling systems, which leaves a large development window for the emerging solution-processable semiconductor-based photo-sensing devices. Among the solution-processable semiconductors, mercury (Hg) chalcogenide colloidal quantum dots (QDs) exhibit unique ultra-broad and tuneable photo-responses in the short-wave infrared to far-wave infrared range, and have demonstrated photo-sensing abilities comparable to the commercial products, especially with advances in high operation temperature. Here, we provide a focused review on photodetectors employing Hg chalcogenide colloidal QDs, with a comprehensive summary of the essential progress in the areas of synthesis methods of QDs, property control, device engineering, focus plane array integration, etc. Besides imaging demonstrations, a series of Hg chalcogenide QD photodetector based flexible, integrated, multi-functional applications are also summarized. This review shows prospects for the next-generation low-cost highly-sensitive and compact IR photodetectors based on solution-processable Hg chalcogenide colloidal QDs.
Collapse
Affiliation(s)
- Yuanyuan Tian
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China.
| | - Hongqiang Luo
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China.
| | - Mengyu Chen
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China.
- Future Display Institute of Xiamen, Xiamen 361005, P. R. China
| | - Cheng Li
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China.
- Future Display Institute of Xiamen, Xiamen 361005, P. R. China
| | - Stephen V Kershaw
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP), City University of Hong Kong, Kowloon, Hong Kong SAR 999077, P. R. China.
| | - Rong Zhang
- Future Display Institute of Xiamen, Xiamen 361005, P. R. China
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, P. R. China
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Xiamen University, Xiamen 361005, P. R. China
| | - Andrey L Rogach
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP), City University of Hong Kong, Kowloon, Hong Kong SAR 999077, P. R. China.
| |
Collapse
|
9
|
Rogalski A. Scaling infrared detectors-status and outlook. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2022; 85:126501. [PMID: 36198261 DOI: 10.1088/1361-6633/ac97a8] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2022] [Accepted: 10/05/2022] [Indexed: 06/16/2023]
Abstract
The predicted 'Law 19' benchmark for HgCdTe photodiode performance established in 2019 is a milestone in the development of infrared (IR) detectors and make the dream of Elliott and colleagues, who in 1999 wrote thatthere is no fundamental obstacle to obtaining room temperature operation of photon detectors at room temperature with background-limited performance even in reduced fields of view(Elliottet al1999Appl. Phys. Lett.742881). This circumstance will make it possible to achieve in the near future the room-temperature IR arrays operation with high pixel density (small pixels) fully compatible with the background and diffraction-limited performance resulting from the system optics. The advent of smaller pixels also results in superior spatial and temperature resolutions of imaging systems. In megapixel imaging systems, the pixel dimension plays a crucial role in determining critical system attributes such as system size, weight, and power consumption. In the paper, the physical limitations of pixel size related to the aperture of the optics, which in turn is wavelength dependent, are described. Since the critical parameter of small pixels is quantum efficiency, more attention has been paid to enhancing the coupling of radiation to the detector. Then, the evaluation for assessing the figure-of-merit of different material systems (especially short wavelength IR colloidal quantum dots, both medium and long wavelength IR novel III-V material systems) relative to bulk HgCdTe alloys is considered. Of the various thermal detectors, particular attention has been focussed on bolometer arrays due to their largest share of the global commercial market. Also key challenges in realizing ultimate pixel dimensions in focal plane arrays design are presented for different material systems including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity.
Collapse
Affiliation(s)
- A Rogalski
- Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland
| |
Collapse
|
10
|
Abadie C, Paggi L, Fabas A, Khalili A, Dang TH, Dabard C, Cavallo M, Alchaar R, Zhang H, Prado Y, Bardou N, Dupuis C, Xu XZ, Ithurria S, Pierucci D, Utterback JK, Fix B, Vincent G, Bouchon P, Lhuillier E. Helmholtz Resonator Applied to Nanocrystal-Based Infrared Sensing. NANO LETTERS 2022; 22:8779-8785. [PMID: 36190814 DOI: 10.1021/acs.nanolett.2c02769] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
While the integration of nanocrystals as an active medium for optoelectronic devices progresses, light management strategies are becoming required. Over recent years, several photonic structures (plasmons, cavities, mirrors, etc.) have been coupled to nanocrystal films to shape the absorption spectrum, tune the directionality, and so on. Here, we explore a photonic equivalent of the acoustic Helmholtz resonator and propose a design that can easily be fabricated. This geometry combines a strong electromagnetic field magnification and a narrow channel width compatible with efficient charge conduction despite hopping conduction. At 80 K, the device reaches a responsivity above 1 A·W-1 and a detectivity above 1011 Jones (3 μm cutoff) while offering a significantly faster time-response than vertical geometry diodes.
Collapse
Affiliation(s)
- Claire Abadie
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Laura Paggi
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Alice Fabas
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Adrien Khalili
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Tung Huu Dang
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Corentin Dabard
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Mariarosa Cavallo
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Rodolphe Alchaar
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Huichen Zhang
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Yoann Prado
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Nathalie Bardou
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Christophe Dupuis
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Debora Pierucci
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - James K Utterback
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Baptiste Fix
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Grégory Vincent
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Patrick Bouchon
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Emmanuel Lhuillier
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| |
Collapse
|
11
|
Grotevent MJ, Yakunin S, Bachmann D, Romero C, Vázquez de Aldana JR, Madi M, Calame M, Kovalenko MV, Shorubalko I. Integrated photodetectors for compact Fourier-transform waveguide spectrometers. NATURE PHOTONICS 2022; 17:59-64. [PMID: 36628352 PMCID: PMC9822831 DOI: 10.1038/s41566-022-01088-7] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/09/2021] [Accepted: 09/14/2022] [Indexed: 06/17/2023]
Abstract
Extreme miniaturization of infrared spectrometers is critical for their integration into next-generation consumer electronics, wearables and ultrasmall satellites. In the infrared, there is a necessary compromise between high spectral bandwidth and high spectral resolution when miniaturizing dispersive elements, narrow band-pass filters and reconstructive spectrometers. Fourier-transform spectrometers are known for their large bandwidth and high spectral resolution in the infrared; however, they have not been fully miniaturized. Waveguide-based Fourier-transform spectrometers offer a low device footprint, but rely on an external imaging sensor such as bulky and expensive InGaAs cameras. Here we demonstrate a proof-of-concept miniaturized Fourier-transform waveguide spectrometer that incorporates a subwavelength and complementary-metal-oxide-semiconductor-compatible colloidal quantum dot photodetector as a light sensor. The resulting spectrometer exhibits a large spectral bandwidth and moderate spectral resolution of 50 cm-1 at a total active spectrometer volume below 100 μm × 100 μm × 100 μm. This ultracompact spectrometer design allows the integration of optical/analytical measurement instruments into consumer electronics and space devices.
Collapse
Affiliation(s)
- Matthias J. Grotevent
- Department of Chemistry and Applied Biosciences, ETH Zurich, Zurich, Switzerland
- Transport at Nanoscale Interfaces Laboratory, Swiss Federal Laboratories for Materials Science and Technology (Empa), Duebendorf, Switzerland
- Present Address: Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA USA
| | - Sergii Yakunin
- Department of Chemistry and Applied Biosciences, ETH Zurich, Zurich, Switzerland
- Laboratory for Thin Films and Photovoltaics, Swiss Federal Laboratories for Materials Science and Technology (Empa), Duebendorf, Switzerland
| | - Dominik Bachmann
- Transport at Nanoscale Interfaces Laboratory, Swiss Federal Laboratories for Materials Science and Technology (Empa), Duebendorf, Switzerland
| | - Carolina Romero
- Grupo de Investigación en Aplicaciones del Láser y Fotónica, Universidad de Salamanca, Salamanca, Spain
| | | | - Matteo Madi
- Optics and Photonics Technology Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
- European Space Agency (ESA), European Space Research and Technology Centre (ESTEC), Noordwijk, The Netherlands
| | - Michel Calame
- Transport at Nanoscale Interfaces Laboratory, Swiss Federal Laboratories for Materials Science and Technology (Empa), Duebendorf, Switzerland
- Department of Physics and Swiss Nanoscience Institute, University of Basel, Basel, Switzerland
| | - Maksym V. Kovalenko
- Department of Chemistry and Applied Biosciences, ETH Zurich, Zurich, Switzerland
- Laboratory for Thin Films and Photovoltaics, Swiss Federal Laboratories for Materials Science and Technology (Empa), Duebendorf, Switzerland
| | - Ivan Shorubalko
- Transport at Nanoscale Interfaces Laboratory, Swiss Federal Laboratories for Materials Science and Technology (Empa), Duebendorf, Switzerland
| |
Collapse
|
12
|
Pierini S, Capitani F, Scimeca M, Kozlov S, Pierucci D, Alchaar R, Abadie C, Khalili A, Cavallo M, Dang TH, Zhang H, Bossavit E, Gréboval C, Avila J, Baptiste B, Klotz S, Sahu A, Feuillet-Palma C, Xu XZ, Ouerghi A, Ithurria S, Utterback JK, Sauvage S, Lhuillier E. Vanishing Confinement Regime in Terahertz HgTe Nanocrystals Studied under Extreme Conditions of Temperature and Pressure. J Phys Chem Lett 2022; 13:6919-6926. [PMID: 35867700 DOI: 10.1021/acs.jpclett.2c01636] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
While HgTe nanocrystals (NCs) in the mid-infrared region have reached a high level of maturity, their far-infrared counterparts remain far less studied, raising the need for an in-depth investigation of the material before efficient device integration can be considered. Here, we explore the effect of temperature and pressure on the structural, spectroscopic, and transport properties of HgTe NCs displaying an intraband absorption at 10 THz. The temperature leads to a very weak modulation of the spectrum as opposed to what was observed for strongly confined HgTe NCs. HgTe NC films present ambipolar conduction with a clear prevalence of electron conduction as confirmed by transistor and thermoelectric measurements. Under the application of pressure, the material undergoes phase transitions from the zinc blende to cinnabar phase and later to the rock salt phase which we reveal using joint X-ray diffraction and infrared spectroscopy measurements. We discuss how the pressure existence domain of each phase is affected by the particle size.
Collapse
Affiliation(s)
- Stefano Pierini
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | | | - Michael Scimeca
- Department of Chemical and Biomolecular Engineering, New York University, Brooklyn, New York 11201, United States
| | - Sergei Kozlov
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Debora Pierucci
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Rodolphe Alchaar
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Claire Abadie
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Charlie Gréboval
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - José Avila
- Synchrotron SOLEIL, Saint-Aubin, BP48, 91190 Saint-Aubin, France
| | - Benoit Baptiste
- Sorbonne Université, CNRS, Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, IMPMC, F-75005 Paris, France
| | - Stefan Klotz
- Sorbonne Université, CNRS, Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, IMPMC, F-75005 Paris, France
| | - Ayaskanta Sahu
- Department of Chemical and Biomolecular Engineering, New York University, Brooklyn, New York 11201, United States
| | - Cheryl Feuillet-Palma
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Abdelkarim Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - James K Utterback
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Sebastien Sauvage
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| |
Collapse
|
13
|
Mid-Infrared HgTe Colloidal Quantum Dots In-Situ Passivated by Iodide. COATINGS 2022. [DOI: 10.3390/coatings12071033] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
Today, colloidal quantum dots (CQDs) have received wide attention due to their properties of tunable infrared absorption. For example, HgTe colloidal quantum dots have shown excellent optical absorption (absorption coefficient α > 104 cm−1), spectral absorption tunability covering the entire infrared atmospheric window, and even the terahertz (THz). However, the efficient surface passivation of HgTe CQDs was limited by the highly sterically hindered long-chain organic ligands. Here, we demonstrate a new method to synthesize monodisperse mid-infrared HgTe CQDs, and the preparation process of the Hg precursor solution is optimized. With I− in-situ passivated on the surfaces, the spherical HgTe quantum dots are successfully synthesized with the tunability size from 8 to 15 nm. The noise current density of the photoconductive device is as low as 10−11 A·Hz−1/2 at 130 K with a frequency of 1 Hz.
Collapse
|
14
|
Gréboval C, Darson D, Parahyba V, Alchaar R, Abadie C, Noguier V, Ferré S, Izquierdo E, Khalili A, Prado Y, Potet P, Lhuillier E. Photoconductive focal plane array based on HgTe quantum dots for fast and cost-effective short-wave infrared imaging. NANOSCALE 2022; 14:9359-9368. [PMID: 35726871 DOI: 10.1039/d2nr01313d] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
HgTe nanocrystals, thanks to quantum confinement, present a broadly tunable band gap all over the infrared spectral range. In addition, significant efforts have been dedicated to the design of infrared sensors with an absorbing layer made of nanocrystals. However, most efforts have been focused on single pixel sensors. Nanocrystals offer an appealing alternative to epitaxially grown semiconductors for infrared imaging by reducing the material growth cost and easing the coupling to the readout circuit. Here we propose a strategy to design an infrared focal plane array from a single fabrication step. The focal plane array (FPA) relies on a specifically designed readout circuit enabling in plane electric field application and operation in photoconductive mode. We demonstrate a VGA format focal plane array with a 15 μm pixel pitch presenting an external quantum efficiency of 4-5% (15% internal quantum efficiency) for a cut-off around 1.8 μm and operation using Peltier cooling only. The FPA is compatible with 200 fps imaging full frame and imaging up to 340 fps is demonstrated by driving a reduced area of the FPA. In the last part of the paper, we discuss the cost of such sensors and show that the latter is only driven by labor costs while we estimate the cost of the NC film to be in the 10-20 € range.
Collapse
Affiliation(s)
- Charlie Gréboval
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - David Darson
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, France
| | - Victor Parahyba
- New Imaging Technologies SA, 1 impasse de la Noisette, 91370 Verrières le Buisson, France
| | - Rodolphe Alchaar
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Claire Abadie
- ONERA - The French Aerospace Lab, 6, chemin de la Vauve aux Granges, BP 80100, 91123 Palaiseau, France
| | - Vincent Noguier
- New Imaging Technologies SA, 1 impasse de la Noisette, 91370 Verrières le Buisson, France
| | - Simon Ferré
- New Imaging Technologies SA, 1 impasse de la Noisette, 91370 Verrières le Buisson, France
| | - Eva Izquierdo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Pierre Potet
- New Imaging Technologies SA, 1 impasse de la Noisette, 91370 Verrières le Buisson, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| |
Collapse
|
15
|
Simulation and Design of HgSe Colloidal Quantum-Dot Microspectrometers. COATINGS 2022. [DOI: 10.3390/coatings12070888] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
In recent years, colloidal quantum dots (CQD) have been intensively studied in various fields due to their excellent optical properties, such as size-tunable absorption features and wide spectral tunability. Therefore, CQDs are promising infrared materials to become alternatives for epitaxial semiconductors, such as HgCdTe, InSb, and type II superlattices. Here, we report a simulation study of a microspectrometer fabricated by integrating an intraband HgSe CQD detector with a distributed Bragg reflector (DBR). Intraband HgSe CQDs possess unique narrowband absorption and optical response, which makes them an ideal material platform to achieve high-resolution detection for infrared signatures, such as molecular vibration. A microspectrometer with a center wavelength of 4 µm is studied. The simulation results show that the optical absorption rate of the HgSe CQD detector can be increased by 300%, and the full-width-at-half-maximum (FWHM) is narrowed to 30%, realizing precise regulation of the absorption wavelength. The influence of the incident angle of light waves on the microspectrometer is also simulated, and the results show that the absorption rate of the HgSe quantum dot detector is increased 2–3 times within the incident angle of 0–23 degrees, reaching a spectral absorption rate of more than 80%. Therefore, we believe that HgSe CQDs are a promising material for realizing practical HgSe microspectrometers.
Collapse
|
16
|
Yang J, Hu H, Lv Y, Yuan M, Wang B, He Z, Chen S, Wang Y, Hu Z, Yu M, Zhang X, He J, Zhang J, Liu H, Hsu HY, Tang J, Song H, Lan X. Ligand-Engineered HgTe Colloidal Quantum Dot Solids for Infrared Photodetectors. NANO LETTERS 2022; 22:3465-3472. [PMID: 35435694 DOI: 10.1021/acs.nanolett.2c00950] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
HgTe colloidal quantum dots (CQDs) are promising absorber systems for infrared detection due to their widely tunable photoresponse in all infrared regions. Up to now, the best-performing HgTe CQD photodetectors have relied on using aggregated CQDs, limiting the device design, uniformity and performance. Herein, we report a ligand-engineered approach that produces well-separated HgTe CQDs. The present strategy first employs strong-binding alkyl thioalcohol ligands to enable the synthesis of well-dispersed HgTe cores, followed by a second growth process and a final postligand modification step enhancing their colloidal stability. We demonstrate highly monodisperse HgTe CQDs in a wide size range, from 4.2 to 15.0 nm with sharp excitonic absorption fully covering short- and midwave infrared regions, together with a record electron mobility of up to 18.4 cm2 V-1 s-1. The photodetectors show a room-temperature detectivity of 3.9 × 1011 jones at a 1.7 μm cutoff absorption edge.
Collapse
Affiliation(s)
- Ji Yang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Huicheng Hu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Yifei Lv
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Mohan Yuan
- School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei 430205, People's Republic of China
| | - Binbin Wang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Ziyang He
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Shiwu Chen
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Ya Wang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Zhixiang Hu
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Mengxuan Yu
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Xingchen Zhang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Jungang He
- School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei 430205, People's Republic of China
| | - Jianbing Zhang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| | - Huan Liu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| | - Hsien-Yi Hsu
- School of Energy and Environment & Department of Materials Science and Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong 999077, People's Republic of China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| | - Xinzheng Lan
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| |
Collapse
|
17
|
Investigation of Nonlinear Optical Processes in Mercury Sulfide Quantum Dots. NANOMATERIALS 2022; 12:nano12081264. [PMID: 35457972 PMCID: PMC9029708 DOI: 10.3390/nano12081264] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/17/2022] [Revised: 04/03/2022] [Accepted: 04/07/2022] [Indexed: 02/05/2023]
Abstract
The authors report the third-harmonic generation, nonlinear refraction, and nonlinear absorption in HgS quantum dot (QD) suspensions and films using the nanosecond and femtosecond pulses. High conversion efficiency (7 × 10−4) towards the third harmonic (TH) of the 900–1700 nm, 150 fs laser in the thin (70 nm) films containing HgS QDs deposited on the glass substrates is obtained. The authors analyze spectral dependencies of the TH, nonlinear refractive indices, and nonlinear absorption coefficients of QDs in the 500–1700 nm range and discuss the relation between the TH process and the low-order nonlinear optical properties of these quantum dots.
Collapse
|
18
|
Ruppert M, Bui H, Sagar LK, Geiregat P, Hens Z, Bester G, Huse N. Intraband dynamics of mid-infrared HgTe quantum dots. NANOSCALE 2022; 14:4123-4130. [PMID: 34874046 DOI: 10.1039/d1nr07007j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Femtosecond pump-probe spectroscopy reveals ultrafast carrier dynamics in mid-infrared (MIR) colloidal HgTe nanoparticles with a bandgap of 2.5 μm. We observe intraband relaxation processes after photoexcitation ranging from resonant excitation up to the multi-exciton generation (MEG) regime by identifying initially excited states from atomic effective pseudopotential calculations. Our study elucidates the earliest dynamics below 10 ps in this technologically relevant material. With increasing photon energy, we find carrier relaxation times as long as 2.1 ps in the MEG regime close to the ionization threshold of the particles. For all photon energies, we extract a constant mean carrier energy dissipation rate of 0.36 eV ps-1 from which we infer negligible impact of the density of states on carrier cooling.
Collapse
Affiliation(s)
- Matthias Ruppert
- Institute for Nanostructure and Solid-State Physics, Department of Physics, University of Hamburg and Center for Free-Electron Laser Science, Luruper Chaussee 149, 22761 Hamburg, Germany.
| | - Hanh Bui
- Physical Chemistry and Physics departments, University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany
- The Hamburg Centre for Ultrafast Imaging, University of Hamburg, Luruper Chaussee, 149, 22761 Hamburg, Germany
| | - Laxmi Kishore Sagar
- Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, Krijgslaan 281 - S3, B-9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, Technologiepark Zwijnaarde 15, B-9052 Gent, Belgium
| | - Pieter Geiregat
- Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, Krijgslaan 281 - S3, B-9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, Technologiepark Zwijnaarde 15, B-9052 Gent, Belgium
| | - Zeger Hens
- Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, Krijgslaan 281 - S3, B-9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, Technologiepark Zwijnaarde 15, B-9052 Gent, Belgium
| | - Gabriel Bester
- Physical Chemistry and Physics departments, University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany
- The Hamburg Centre for Ultrafast Imaging, University of Hamburg, Luruper Chaussee, 149, 22761 Hamburg, Germany
| | - Nils Huse
- Institute for Nanostructure and Solid-State Physics, Department of Physics, University of Hamburg and Center for Free-Electron Laser Science, Luruper Chaussee 149, 22761 Hamburg, Germany.
- The Hamburg Centre for Ultrafast Imaging, University of Hamburg, Luruper Chaussee, 149, 22761 Hamburg, Germany
| |
Collapse
|
19
|
Aubert T, Golovatenko AA, Samoli M, Lermusiaux L, Zinn T, Abécassis B, Rodina AV, Hens Z. General Expression for the Size-Dependent Optical Properties of Quantum Dots. NANO LETTERS 2022; 22:1778-1785. [PMID: 35156830 DOI: 10.1021/acs.nanolett.2c00056] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
While initial theories on quantum confinement in colloidal quantum dots (QDs) led to analytical band gap/size relations or sizing functions, numerical methods describe size quantization more accurately. However, because of the lack of reliable sizing functions, researchers fit experimental band gap/size data sets using models with redundant, physically meaningless parameters that break down upon extrapolation. Here, we propose a new sizing function based on a proportional correction for nonparabolic bands. Using known bulk parameters, we predict size quantization for groups IV, III-V, II-VI, and IV-VI and metal-halide perovskite semiconductors, including straightforward adaptations for negative-gap semiconductors and nonspherical QDs. Refinement with respect to experimental data is possible using the Bohr diameter as a fitting parameter, by which we show a statistically relevant difference in the band gap/size relation for wurtzite and zinc blende CdSe. The general sizing function proposed here unifies the QD size calibration and enables researchers to assess bulk semiconductor parameters and predict the size quantization in unexplored materials.
Collapse
Affiliation(s)
- Tangi Aubert
- Physics and Chemistry of Nanostructures, Ghent University, 9000 Ghent, Belgium
- ICGM, Université de Montpellier, CNRS, ENSCM, 34000 Montpellier, France
| | | | - Margarita Samoli
- Physics and Chemistry of Nanostructures, Ghent University, 9000 Ghent, Belgium
| | - Laurent Lermusiaux
- Université de Lyon, ENS de Lyon, CNRS, Laboratoire de Chimie, 69342 Lyon, France
| | - Thomas Zinn
- ESRF - The European Synchrotron, 38043 Grenoble, France
| | - Benjamin Abécassis
- Université de Lyon, ENS de Lyon, CNRS, Laboratoire de Chimie, 69342 Lyon, France
| | - Anna V Rodina
- Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
| | - Zeger Hens
- Physics and Chemistry of Nanostructures, Ghent University, 9000 Ghent, Belgium
| |
Collapse
|
20
|
Dang TH, Vasanelli A, Todorov Y, Sirtori C, Prado Y, Chu A, Gréboval C, Khalili A, Cruguel H, Delerue C, Vincent G, Lhuillier E. Bias Tunable Spectral Response of Nanocrystal Array in a Plasmonic Cavity. NANO LETTERS 2021; 21:6671-6677. [PMID: 34339191 DOI: 10.1021/acs.nanolett.1c02193] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Nanocrystals (NCs) have gained considerable attention for their broadly tunable absorption from the UV to the THz range. Nevertheless, their optical features suffer from a lack of tunability once integrated into optoelectronic devices. Here, we show that bias tunable aspectral response is obtained by coupling a HgTe NC array with a plasmonic resonator. Up to 15 meV blueshift can be achieved from a 3 μm absorbing wavelength structure under a 3 V bias voltage when the NC exciton is coupled with a mode of the resonator. We demonstrate that the blueshift arises from the interplay between hopping transport and inhomogeneous absorption due to the presence of the photonic structure. The observed tunable spectral response is qualitatively reproduced in simulation by introducing a bias-dependent diffusion length in the charge transport. This work expands the realm of existing NC-based devices and paves the way toward light modulators.
Collapse
Affiliation(s)
- Tung Huu Dang
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, 75005 Paris, France
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Angela Vasanelli
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, 75005 Paris, France
| | - Yanko Todorov
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, 75005 Paris, France
| | - Carlo Sirtori
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, 75005 Paris, France
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Audrey Chu
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
- ONERA - The French Aerospace Lab, 6, chemin de la Vauve aux Granges, BP 80100, 91123 Palaiseau, France
| | - Charlie Gréboval
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Herve Cruguel
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Christophe Delerue
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia, UMR 8520 - IEMN, F-59000 Lille, France
| | - Gregory Vincent
- ONERA - The French Aerospace Lab, 6, chemin de la Vauve aux Granges, BP 80100, 91123 Palaiseau, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| |
Collapse
|
21
|
Khan MD, Opallo M, Revaprasadu N. Colloidal synthesis of metal chalcogenide nanomaterials from metal-organic precursors and capping ligand effect on electrocatalytic performance: progress, challenges and future perspectives. Dalton Trans 2021; 50:11347-11359. [PMID: 34369529 DOI: 10.1039/d1dt01742j] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
Abstract
Renewable and sustainable functional nanomaterials, which can be employed in alternative green energy sources, are highly desirable. Transition metal chalcogenides are potential catalysts for processes resulting in energy generation and storage. In order to optimize their catalytic performance, high phase purity and precise control over shape and size are indispensable. Metal-organic precursors with pre-formed bonds between the metal and the chalcogenide atoms are advantageous in synthesizing phase pure transition metal chalcogenides with controlled shape and sizes. This can be achieved by the decomposition of metal-organic precursors in the presence of suitable surfactants/capping agents. However, the recent studies on electrocatalysis at the nanoscale level reveal that the capping agents attached to their surface have a detrimental effect on their efficiency. The removal of surfactants from active sites to obtain bare surface nanoparticles is necessary to enhance catalytic activity. Herein, we have discussed the properties of different metal-organic precursors and the role of surfactants in the colloidal synthesis of metal chalcogenide nanomaterials. Moreover, the effect of surfactants on their electrocatalytic performance, the commonly used strategies for removing surfactants from the surface of nanomaterials and the future perspectives are reviewed.
Collapse
Affiliation(s)
- Malik Dilshad Khan
- Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224, Warsaw, Poland
| | | | | |
Collapse
|
22
|
Infrared photoconduction at the diffusion length limit in HgTe nanocrystal arrays. Nat Commun 2021; 12:1794. [PMID: 33741921 PMCID: PMC7979921 DOI: 10.1038/s41467-021-21959-x] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/02/2020] [Accepted: 02/20/2021] [Indexed: 12/02/2022] Open
Abstract
Narrow band gap nanocrystals offer an interesting platform for alternative design of low-cost infrared sensors. It has been demonstrated that transport in HgTe nanocrystal arrays occurs between strongly-coupled islands of nanocrystals in which charges are partly delocalized. This, combined with the scaling of the noise with the active volume of the film, make case for device size reduction. Here, with two steps of optical lithography we design a nanotrench which effective channel length corresponds to 5–10 nanocrystals, matching the carrier diffusion length. We demonstrate responsivity as high as 1 kA W−1, which is 105 times higher than for conventional µm-scale channel length. In this work the associated specific detectivity exceeds 1012 Jones for 2.5 µm peak detection under 1 V at 200 K and 1 kHz, while the time response is as short as 20 µs, making this performance the highest reported for HgTe NC-based extended short-wave infrared detection. Infrared nanocrystals have become an enabling building block for the design of low-cost infrared sensors. Here, Chu et al. design a nanotrench device geometry at the diffusion length limit in HgTe nanocrystals and demonstrate the record high sensing performance operated in the short-wave infrared.
Collapse
|
23
|
Gréboval C, Chu A, Goubet N, Livache C, Ithurria S, Lhuillier E. Mercury Chalcogenide Quantum Dots: Material Perspective for Device Integration. Chem Rev 2021; 121:3627-3700. [DOI: 10.1021/acs.chemrev.0c01120] [Citation(s) in RCA: 32] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Affiliation(s)
- Charlie Gréboval
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
| | - Audrey Chu
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
| | - Nicolas Goubet
- CNRS, Laboratoire de la Molécule aux Nano-objets; Réactivité, Interactions et Spectroscopies, MONARIS, Sorbonne Université, 4 Place Jussieu, Case Courier 840, F-75005 Paris, France
| | - Clément Livache
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d’Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Emmanuel Lhuillier
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
| |
Collapse
|
24
|
Grotevent MJ, Hail CU, Yakunin S, Bachmann D, Calame M, Poulikakos D, Kovalenko MV, Shorubalko I. Colloidal HgTe Quantum Dot/Graphene Phototransistor with a Spectral Sensitivity Beyond 3 µm. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2003360. [PMID: 33747735 PMCID: PMC7967065 DOI: 10.1002/advs.202003360] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2020] [Revised: 12/14/2020] [Indexed: 05/03/2023]
Abstract
Infrared light detection enables diverse technologies ranging from night vision to gas analysis. Emerging technologies such as low-cost cameras for self-driving cars require highly sensitive, low-cost photodetector cameras with spectral sensitivities up to wavelengths of 10 µm. For this purpose, colloidal quantum dot (QD) graphene phototransistors offer a viable alternative to traditional technologies owing to inexpensive synthesis and processing of QDs. However, the spectral range of QD/graphene phototransistors is thus far limited to 1.6 µm. Here, HgTe QD/graphene phototransistors with spectral sensitivity up to 3 µm are presented, with specific detectivities of 6 × 108 Jones at a wavelength of 2.5 µm and a temperature of 80 K. Even at kHz light modulation frequencies, specific detectivities exceed 108 Jones making them suitable for fast video imaging. The simple device architecture and QD film patterning in combination with a broad spectral sensitivity manifest an important step toward low-cost, multi-color infrared cameras.
Collapse
Affiliation(s)
- Matthias J. Grotevent
- Department of Chemistry and Applied BiosciencesETH ZurichVladimir Prelog Weg 1ZurichCH‐8093Switzerland
- Laboratory for Transport at Nanoscale InterfacesSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
| | - Claudio U. Hail
- Department of Mechanical and Process EngineeringETH ZurichSonneggstrasse 3ZurichCH‐8092Switzerland
| | - Sergii Yakunin
- Department of Chemistry and Applied BiosciencesETH ZurichVladimir Prelog Weg 1ZurichCH‐8093Switzerland
- Laboratory for Thin Films and PhotovoltaicsSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
| | - Dominik Bachmann
- Laboratory for Transport at Nanoscale InterfacesSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
| | - Michel Calame
- Laboratory for Transport at Nanoscale InterfacesSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
- Department of PhysicsUniversity of BaselKlingelbergstrasse 82BaselCH‐4056Switzerland
| | - Dimos Poulikakos
- Department of Mechanical and Process EngineeringETH ZurichSonneggstrasse 3ZurichCH‐8092Switzerland
| | - Maksym V. Kovalenko
- Department of Chemistry and Applied BiosciencesETH ZurichVladimir Prelog Weg 1ZurichCH‐8093Switzerland
- Laboratory for Thin Films and PhotovoltaicsSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
| | - Ivan Shorubalko
- Laboratory for Transport at Nanoscale InterfacesSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
| |
Collapse
|
25
|
Moghaddam N, Dabard C, Dufour M, Po H, Xu X, Pons T, Lhuillier E, Ithurria S. Surface Modification of CdE (E: S, Se, and Te) Nanoplatelets to Reach Thicker Nanoplatelets and Homostructures with Confinement-Induced Intraparticle Type I Energy Level Alignment. J Am Chem Soc 2021; 143:1863-1872. [PMID: 33471504 DOI: 10.1021/jacs.0c10336] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/08/2023]
Abstract
Two-dimensional II-VI semiconductor nanoplatelets (NPLs) present exceptionally narrow optical features due to their thickness defined at the atomic scale. Because thickness drives the band-edge energy, its control is of paramount importance. Here, we demonstrate that native carboxylate ligands can be replaced by halides that partially dissolve cadmium chalcogenide NPLs at the edges. The released monomers then recrystallize on the wide top and bottom facets, leading to an increase in NPL thickness. This dissolution/recrystallization method is used to increase NPL thickness to 9 ML while using 3 ML NPLs as the starting material. We also demonstrate that this method is not limited to CdSe and can be extended to CdS and CdTe to grow thick NPLs. When the metal halide precursor is introduced with a chalcogenide precursor on the NPLs, CdSe/CdSe, CdTe/CdTe, and CdSe/CdTe core/shell homo- and heterostructures are achieved. Finally, when an incomplete layer is grown, NPLs with steps are synthesized. These stress-free homostructures are comparable to type I heterostructures, leading to recombination of the exciton in the thicker area of the NPLs. Following the growth of core/crown and core/shell NPLs, it affords a new degree of freedom for the growth of structured NPLs with designed band engineering, which has so far been only achievable for heteromaterial nanostructures.
Collapse
Affiliation(s)
- Nicolas Moghaddam
- CNRS, Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université UPMC Univ Paris 06, 10 rue Vauquelin, 75005 Paris, France
| | - Corentin Dabard
- CNRS, Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université UPMC Univ Paris 06, 10 rue Vauquelin, 75005 Paris, France.,CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
| | - Marion Dufour
- CNRS, Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université UPMC Univ Paris 06, 10 rue Vauquelin, 75005 Paris, France
| | - Hong Po
- CNRS, Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université UPMC Univ Paris 06, 10 rue Vauquelin, 75005 Paris, France
| | - Xiangzhen Xu
- CNRS, Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université UPMC Univ Paris 06, 10 rue Vauquelin, 75005 Paris, France
| | - Thomas Pons
- CNRS, Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université UPMC Univ Paris 06, 10 rue Vauquelin, 75005 Paris, France
| | - Emmanuel Lhuillier
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
| | - Sandrine Ithurria
- CNRS, Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université UPMC Univ Paris 06, 10 rue Vauquelin, 75005 Paris, France
| |
Collapse
|
26
|
Simulation of Monolithically Integrated Meta-Lens with Colloidal Quantum Dot Infrared Detectors for Enhanced Absorption. COATINGS 2020. [DOI: 10.3390/coatings10121218] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Colloidal quantum dots (CQDs) have been intensively investigated over the past decades in various fields for both light detection and emission applications due to their advantages like low cost, large-scale production, and tunable spectral absorption. However, current infrared CQD detectors still suffer from one common problem, which is the low absorption rate limited by CQD film thickness. Here, we report a simulation study of CQD infrared detectors with monolithically integrated meta-lenses as light concentrators. The design of the meta-lens for 4 μm infrared was investigated and simulation results show that light intensity in the focused region is ~20 times higher. Full device stacks were also simulated, and results show that, with a meta-lens, high absorption of 80% can be achieved even when the electric area of the CQD detectors was decreased by a factor of 64. With higher absorption and a smaller detector area, the employment of meta-lenses as optical concentrators could possibly improve the detectivity by a factor of 32. Therefore, we believe that integration of CQD infrared detectors with meta-lenses could serve as a promising route towards high performance infrared optoelectronics.
Collapse
|
27
|
Shuklov IA, Mikhel IS, Nevidimov AV, Birin KP, Dubrovina NV, Lizunova AA, Razumov VF. Mechanistic Insights into the Synthesis of Telluride Colloidal Quantum Dots with Trioctylphosphine‐Tellurium. ChemistrySelect 2020. [DOI: 10.1002/slct.202002711] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Ivan A. Shuklov
- Moscow Institute of Physics and Technology (Ntl. Res. Univ.) Institutskii per. 9 141700 Dolgoprudny Russia
| | - Igor S. Mikhel
- Frumkin Institute of Physical Chemistry and Electrochemistry Russian Academy of Sciences Leninsky Prospect 31/4 119071 Moscow Russia
| | - Alexander V. Nevidimov
- Institute of Problems of Chemical Physics Russian Academy of Sciences Ac. Semenov avenue 1 142432 Chernogolovka Russia
| | - Kirill P. Birin
- Frumkin Institute of Physical Chemistry and Electrochemistry Russian Academy of Sciences Leninsky Prospect 31/4 119071 Moscow Russia
| | | | - Anna A. Lizunova
- Moscow Institute of Physics and Technology (Ntl. Res. Univ.) Institutskii per. 9 141700 Dolgoprudny Russia
| | - Vladimir F. Razumov
- Moscow Institute of Physics and Technology (Ntl. Res. Univ.) Institutskii per. 9 141700 Dolgoprudny Russia
- Frumkin Institute of Physical Chemistry and Electrochemistry Russian Academy of Sciences Leninsky Prospect 31/4 119071 Moscow Russia
| |
Collapse
|
28
|
Sreeshma D, Janani B, Jagtap A, Abhale A, Rao KSRK. Defect studies on short-wave infrared photovoltaic devices based on HgTe nanocrystals/TiO 2 heterojunction. NANOTECHNOLOGY 2020; 31:385701. [PMID: 32480395 DOI: 10.1088/1361-6528/ab9869] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Narrow bandgap (<0.5 eV) colloidal semiconductor nanocrystals (e.g. mercury chalcogenides) provide practical platforms for next generation short wave infrared, mid wave infrared and long wave infrared optoelectronic devices. Until now, most of the efforts in the field of infrared active nanocrystals have been taken on synthesizing nanocrystals, determining quantum states and building different geometries for optoelectronic devices. However, studies on interface trap states in the devices made from these narrow band gap nanocrystals are mostly unexplored. Herein, we investigate the defects or traps in these nanocrystals-embedded devices, which will be critical for improving their optoelectronic performance. In this article, we fabricate HgTe nanocrystals/TiO2 based photovoltaic devices and used capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) to investigate and obtain quantitative information on deep level trap states. Interestingly, frequency dependent C-V measurements show two peaks in the capacitance at lower frequency (<40 kHz), which is attributed to the presence of trap states. However, at high frequency the presence of a weak hump-like structure almost at the center of above two peaks validate the role of interface traps. DLTS studies show that traps at the interface of HgTe nanocrystals/TiO2 acts as recombination centers having activation energies of 0.27, 0.4 and 0.45 eV with corresponding trap densities of 1.4 [Formula: see text], 1.[Formula: see text] and 1.[Formula: see text] and estimated capture cross-sections of 6.3 [Formula: see text], 7.5 [Formula: see text] and 3.7 [Formula: see text], respectively. In this work, DLTS has revealed the existence of interface trap states and the frequency dependent capacitance measurements corroborate the effect of charge storage on the heterostructures built from these nanocrystals that helps in the development of futuristic devices.
Collapse
Affiliation(s)
- D Sreeshma
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | | | | | | | | |
Collapse
|
29
|
Abstract
The application of infrared detectors based on epitaxially grown semiconductors such as HgCdTe, InSb and InGaAs is limited by their high cost and difficulty in raising operating temperature. The development of infrared detectors depends on cheaper materials with high carrier mobility, tunable spectral response and compatibility with large-scale semiconductor processes. In recent years, the appearance of mercury telluride colloidal quantum dots (HgTe CQDs) provided a new choice for infrared detection and had attracted wide attention due to their excellent optical properties, solubility processability, mechanical flexibility and size-tunable absorption features. In this review, we summarized the recent progress of HgTe CQDs based infrared detectors, including synthesis, device physics, photodetection mechanism, multi-spectral imaging and focal plane array (FPA).
Collapse
|
30
|
Dong Y, Chen M, Yiu WK, Zhu Q, Zhou G, Kershaw SV, Ke N, Wong CP, Rogach AL, Zhao N. Solution Processed Hybrid Polymer: HgTe Quantum Dot Phototransistor with High Sensitivity and Fast Infrared Response up to 2400 nm at Room Temperature. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2000068. [PMID: 32596115 PMCID: PMC7312319 DOI: 10.1002/advs.202000068] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2020] [Revised: 04/04/2020] [Indexed: 05/19/2023]
Abstract
Narrow bandgap semiconductor-based photodetectors often suffer from high room-temperature noise and are therefore operated at low temperatures. Here, a hybrid poly(3-hexylthiophene) (P3HT): HgTe quantum dot (QD) phototransistor is reported, which exhibits high sensitivity and fast photodetection up to 2400 nm wavelength range at room temperature. The active layer of the phototransistor consists of HgTe QDs well dispersed in a P3HT matrix. Fourier-transform infrared spectra confirm that chemical grafting between P3HT and HgTe QDs is realized after undergoing prolonged coblend stirring and a ligand exchange process. Thanks to the shifting of the charge transport into the P3HT and the partial passivation of the surface traps of HgTe QDs in the blend, the P3HT: HgTe QD hybrid phototransistor shows significantly improved gate-voltage tuning, 15 times faster response, and ≈80% reduction in the noise level compared to a pristine HgTe QD control device. More than 1011 Jones specific detectivity (estimated from the noise spectral density measured at 1 kHz) is achieved at room temperature, and the response time (measured at 22 mW cm-2 illumination intensity) of the device is less than 1.5 µs. That is comparable to commercial epitaxially grown IR photodetectors operated in the same wavelength range.
Collapse
Affiliation(s)
- Yifan Dong
- Engineering Research Center of Nano‐Geomaterials of Ministry of EducationFaculty of Materials Science and ChemistryChina University of GeosciencesWuhan430074China
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New Territories, 999077Hong Kong SARChina
| | - Mengyu Chen
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New Territories, 999077Hong Kong SARChina
| | - Wai Kin Yiu
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP)City University of Hong KongKowloonHong Kong SAR999077China
| | - Qiang Zhu
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New Territories, 999077Hong Kong SARChina
| | - Guodong Zhou
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New Territories, 999077Hong Kong SARChina
| | - Stephen V. Kershaw
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP)City University of Hong KongKowloonHong Kong SAR999077China
| | - Ning Ke
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New Territories, 999077Hong Kong SARChina
| | - Ching Ping Wong
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New Territories, 999077Hong Kong SARChina
- School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaGA30332USA
| | - Andrey L. Rogach
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP)City University of Hong KongKowloonHong Kong SAR999077China
| | - Ni Zhao
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New Territories, 999077Hong Kong SARChina
| |
Collapse
|
31
|
Tenney SM, Vilchez V, Sonnleitner ML, Huang C, Friedman HC, Shin AJ, Atallah TL, Deshmukh AP, Ithurria S, Caram JR. Mercury Chalcogenide Nanoplatelet-Quantum Dot Heterostructures as a New Class of Continuously Tunable Bright Shortwave Infrared Emitters. J Phys Chem Lett 2020; 11:3473-3480. [PMID: 32293896 DOI: 10.1021/acs.jpclett.0c00958] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Despite broad applications in imaging, energy conversion, and telecommunications, few nanoscale moieties emit light efficiently in the shortwave infrared (SWIR, 1000-2000 nm or 1.24-0.62 eV). We report quantum-confined mercury chalcogenide (HgX, where X = Se or Te) nanoplatelets (NPLs) can be induced to emit bright (QY > 30%) and tunable (900-1500+ nm) infrared emission from attached quantum dot (QD) "defect" states. We demonstrate near unity energy transfer from NPL to these QDs, which completely quench NPL emission and emit with a high QY through the SWIR. This QD defect emission is kinetically tunable, enabling controlled midgap emission from NPLs. Spectrally resolved photoluminescence demonstrates energy-dependent lifetimes, with radiative rates 10-20 times faster than those of their PbX analogues in the same spectral window. Coupled with their high quantum yield, midgap emission HgX dots on HgX NPLs provide a potential platform for novel optoelectronics in the SWIR.
Collapse
Affiliation(s)
- Stephanie M Tenney
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Victoria Vilchez
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Mikayla L Sonnleitner
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Chengye Huang
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Hannah C Friedman
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Ashley J Shin
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Timothy L Atallah
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Arundhati P Deshmukh
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Étude des Matériaux, PSL Research University, CNRS UMR 8213, ESPCI ParisTech, 10 rue Vauquelin, 75005 Paris, France
| | - Justin R Caram
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| |
Collapse
|
32
|
Lan X, Chen M, Hudson MH, Kamysbayev V, Wang Y, Guyot-Sionnest P, Talapin DV. Quantum dot solids showing state-resolved band-like transport. NATURE MATERIALS 2020; 19:323-329. [PMID: 31988516 DOI: 10.1038/s41563-019-0582-2] [Citation(s) in RCA: 76] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/01/2019] [Accepted: 12/11/2019] [Indexed: 06/10/2023]
Abstract
Improving charge mobility in quantum dot (QD) films is important for the performance of photodetectors, solar cells and light-emitting diodes. However, these applications also require preservation of well defined QD electronic states and optical transitions. Here, we present HgTe QD films that show high mobility for charges transported through discrete QD states. A hybrid surface passivation process efficiently eliminates surface states, provides tunable air-stable n and p doping and enables hysteresis-free filling of QD states evidenced by strong conductance modulation. QD films dried at room temperature without any post-treatments exhibit mobility up to μ ~ 8 cm2 V-1 s-1 at a low carrier density of less than one electron per QD, band-like behaviour down to 77 K, and similar drift and Hall mobilities at all temperatures. This unprecedented set of electronic properties raises important questions about the delocalization and hopping mechanisms for transport in QD solids, and introduces opportunities for improving QD technologies.
Collapse
Affiliation(s)
- Xinzheng Lan
- Department of Chemistry and James Franck Institute, University of Chicago, Chicago, IL, USA
| | - Menglu Chen
- Department of Chemistry and James Franck Institute, University of Chicago, Chicago, IL, USA
| | - Margaret H Hudson
- Department of Chemistry and James Franck Institute, University of Chicago, Chicago, IL, USA
| | - Vladislav Kamysbayev
- Department of Chemistry and James Franck Institute, University of Chicago, Chicago, IL, USA
| | - Yuanyuan Wang
- Department of Chemistry and James Franck Institute, University of Chicago, Chicago, IL, USA
| | - Philippe Guyot-Sionnest
- Department of Chemistry and James Franck Institute, University of Chicago, Chicago, IL, USA.
| | - Dmitri V Talapin
- Department of Chemistry and James Franck Institute, University of Chicago, Chicago, IL, USA.
| |
Collapse
|
33
|
Tyagi D, Wang H, Huang W, Hu L, Tang Y, Guo Z, Ouyang Z, Zhang H. Recent advances in two-dimensional-material-based sensing technology toward health and environmental monitoring applications. NANOSCALE 2020; 12:3535-3559. [PMID: 32003390 DOI: 10.1039/c9nr10178k] [Citation(s) in RCA: 121] [Impact Index Per Article: 30.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Monitoring harmful and toxic chemicals, gases, microorganisms, and radiation has been a challenge to the scientific community for the betterment of human health and environment. Two-dimensional (2D)-material-based sensors are highly efficient and compatible with modern fabrication technology, which yield data that can be proficiently used for health and environmental monitoring. Graphene and its oxides, black phosphorus (BP), transition metal dichalcogenides (TMDCs), metal oxides, and other 2D nanomaterials have demonstrated properties that have been alluring for the manufacture of highly sensitive sensors due to their unique material properties arising from their inherent structures. This review summarizes the properties of 2D nanomaterials that can provide a platform to develop high-performance sensors. In this review, we have also discussed the advances made in the field of infrared photodetectors and electrochemical sensors and how the structural properties of 2D nanomaterials affect sensitivity and performance. Further, this review highlights 2D-nanomaterial-based electrochemical sensors that can be used to check for contaminations from heavy metals, organic/inorganic compounds, poisonous gases, pesticides, bacteria, antibiotics, etc., in water or air, which are severe risks to human wellbeing as well as the environment. Moreover, the limitations, future prospects, and challenges for the development of sensors based on 2D materials are also discussed for future advancements.
Collapse
Affiliation(s)
- Deepika Tyagi
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China. and College of Electronic Science and Technology of Shenzhen University, THz Technical Research Center of Shenzhen University, Key Laboratory of Optoelectronics Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Huide Wang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Weichun Huang
- College of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, Jiangsu, P. R. China
| | - Lanping Hu
- College of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, Jiangsu, P. R. China
| | - Yanfeng Tang
- College of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, Jiangsu, P. R. China
| | - Zhinan Guo
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Zhengbiao Ouyang
- College of Electronic Science and Technology of Shenzhen University, THz Technical Research Center of Shenzhen University, Key Laboratory of Optoelectronics Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
| |
Collapse
|
34
|
Meyer EL, Mbese JZ, Agoro MA. The Frontiers of Nanomaterials (SnS, PbS and CuS) for Dye-Sensitized Solar Cell Applications: An Exciting New Infrared Material. Molecules 2019; 24:E4223. [PMID: 31757087 PMCID: PMC6930557 DOI: 10.3390/molecules24234223] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2019] [Revised: 11/11/2019] [Accepted: 11/12/2019] [Indexed: 11/16/2022] Open
Abstract
To date, extensive studies have been done on solar cells on how to harness the unpleasant climatic condition for the binary benefits of renewable energy sources and potential energy solutions. Photovoltaic (PV) is considered as, not only as the future of humanity's source of green energy, but also as a reliable solution to the energy crisis due to its sustainability, abundance, easy fabrication, cost-friendly and environmentally hazard-free nature. PV is grouped into first, second and third-generation cells. Dye-sensitized solar cells (DSSCs), classified as third-generation PV, have gained more ground in recent times. This is linked to their transparency, high efficiency, shape, being cost-friendly and flexibility of colour. However, further improvement of DSSCs by quantum dot sensitized solar cells (QDSSCs) has increased their efficiency through the use of semiconducting materials, such as quantum dots (QDs), as sensitizers. This has paved way for the fabrication of semiconducting QDs to replace the ideal DSSCs with quantum dot sensitized solar cells (QDSSCs). Moreover, there are no absolute photosensitizers that can cover all the infrared spectrum, the infusion of QD metal sulphides with better absorption could serve as a breakthrough. Metal sulphides, such as PbS, SnS and CuS QDs could be used as photosensitizers due to their strong near infrared (NIR) absorption properties. A few great dependable and reproducible routes to synthesize better QD size have attained much ground in the past and of late. The injection of these QD materials, which display (NIR) absorption with localized surface plasmon resonances (SPR), due to self-doped p-type carriers and photocatalytic activity could enhance the performance of the solar cell. This review will be focused on QDs in solar cell applications, the recent advances in the synthesis method, their stability, and long term prospects of QDSSCs efficiency.
Collapse
Affiliation(s)
- Edson L. Meyer
- Department of Chemistry, University of Fort Hare, Private Bag X1314, Alice 5700, South Africa;
| | - Johannes Z. Mbese
- Fort Hare Institute of Technology, University of Fort Hare, Private Bag X1314, Alice 5700, South Africa
| | - Mojeed A. Agoro
- Department of Chemistry, University of Fort Hare, Private Bag X1314, Alice 5700, South Africa;
- Fort Hare Institute of Technology, University of Fort Hare, Private Bag X1314, Alice 5700, South Africa
| |
Collapse
|
35
|
Chu A, Martinez B, Ferré S, Noguier V, Gréboval C, Livache C, Qu J, Prado Y, Casaretto N, Goubet N, Cruguel H, Dudy L, Silly MG, Vincent G, Lhuillier E. HgTe Nanocrystals for SWIR Detection and Their Integration up to the Focal Plane Array. ACS APPLIED MATERIALS & INTERFACES 2019; 11:33116-33123. [PMID: 31426628 DOI: 10.1021/acsami.9b09954] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Infrared applications remain too often a niche market due to their prohibitive cost. Nanocrystals offer an interesting alternative to reach cost disruption especially in the short-wave infrared (SWIR, λ < 1.7 μm) where material maturity is now high. Two families of materials are candidate for SWIR photoconduction: lead and mercury chalcogenides. Lead sulfide typically benefits from all the development made for a wider band gap such as the one made for solar cells, while HgTe takes advantage of the development relative to mid-wave infrared detectors. Here, we make a fair comparison of the two material detection properties in the SWIR and discuss the material stability. At such wavelengths, studies have been mostly focused on PbS rather than on HgTe, therefore we focus in the last part of the discussion on the effect of surface chemistry on the electronic spectrum of HgTe nanocrystals. We unveil that tuning the capping ligands is a viable strategy to adjust the material from the p-type to ambipolar. Finally, HgTe nanocrystals are integrated into multipixel devices to quantize spatial homogeneity and onto read-out circuits to obtain a fast and sensitive infrared laser beam profile.
Collapse
Affiliation(s)
- Audrey Chu
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- ONERA-The French Aerospace Lab , Chemin de la Hunière, BP 80100 , F-91123 Palaiseau , France
| | - Bertille Martinez
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI Paris PSL Research University, Sorbonne Université Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris , France
| | - Simon Ferré
- New Imaging Technologies SA , 1 impasse de la Noisette 91370 Verrières le Buisson , France
| | - Vincent Noguier
- New Imaging Technologies SA , 1 impasse de la Noisette 91370 Verrières le Buisson , France
| | - Charlie Gréboval
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Clément Livache
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI Paris PSL Research University, Sorbonne Université Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris , France
| | - Junling Qu
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Nicolas Casaretto
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Nicolas Goubet
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Sorbonne Université, CNRS, De la Molécule aux Nano-objets: Réactivité, Interactions et Spectroscopies, MONARIS , F-75005 Paris , France
| | - Hervé Cruguel
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Lenart Dudy
- Synchrotron-SOLEIL , Saint-Aubin, BP48 , F91192 Gif sur Yvette Cedex , France
| | - Mathieu G Silly
- Synchrotron-SOLEIL , Saint-Aubin, BP48 , F91192 Gif sur Yvette Cedex , France
| | - Grégory Vincent
- ONERA-The French Aerospace Lab , Chemin de la Hunière, BP 80100 , F-91123 Palaiseau , France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| |
Collapse
|
36
|
Guyot-Sionnest P, Ackerman MM, Tang X. Colloidal quantum dots for infrared detection beyond silicon. J Chem Phys 2019. [DOI: 10.1063/1.5115501] [Citation(s) in RCA: 43] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023] Open
Affiliation(s)
- Philippe Guyot-Sionnest
- James Franck Institute, The University of Chicago, 929E. 57th Street, Chicago, Illinois 60637, USA
| | - Matthew M. Ackerman
- James Franck Institute, The University of Chicago, 929E. 57th Street, Chicago, Illinois 60637, USA
| | - Xin Tang
- James Franck Institute, The University of Chicago, 929E. 57th Street, Chicago, Illinois 60637, USA
| |
Collapse
|
37
|
A colloidal quantum dot infrared photodetector and its use for intraband detection. Nat Commun 2019; 10:2125. [PMID: 31073132 PMCID: PMC6509134 DOI: 10.1038/s41467-019-10170-8] [Citation(s) in RCA: 78] [Impact Index Per Article: 15.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2019] [Accepted: 04/18/2019] [Indexed: 11/09/2022] Open
Abstract
Wavefunction engineering using intraband transition is the most versatile strategy for the design of infrared devices. To date, this strategy is nevertheless limited to epitaxially grown semiconductors, which lead to prohibitive costs for many applications. Meanwhile, colloidal nanocrystals have gained a high level of maturity from a material perspective and now achieve a broad spectral tunability. Here, we demonstrate that the energy landscape of quantum well and quantum dot infrared photodetectors can be mimicked from a mixture of mercury selenide and mercury telluride nanocrystals. This metamaterial combines intraband absorption with enhanced transport properties (i.e. low dark current, fast time response and large thermal activation energy). We also integrate this material into a photodiode with the highest infrared detection performances reported for an intraband-based nanocrystal device. This work demonstrates that the concept of wavefunction engineering at the device scale can now be applied for the design of complex colloidal nanocrystal-based devices. The field of wavefunction engineering using intraband transition to design infrared devices has been limited to epitaxially grown semiconductors. Here the authors demonstrate that a device with similar energy landscape can be obtained from a mixture of colloidal quantum dots made of HgTe and HgSe.
Collapse
|
38
|
Thiele G, Bron P, Lippert S, Nietschke F, Oeckler O, Koch M, Roling B, Dehnen S. K 2Hg 2Te 3: Straightforward and Large-Scale Mercury-Flux Synthesis of a Small-Band-Gap Photoconducting Material. Inorg Chem 2019; 58:4052-4054. [PMID: 30251538 DOI: 10.1021/acs.inorgchem.8b02310] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
K2Hg2Te3 was synthesized via a mercury-flux synthesis pathway. Single-crystal and powder X-ray diffraction reveal the compound to be isostructural to its lighter congener K2Hg2Se3, yet exhibiting enhanced photoconductivity and electrical conductivity of (several) orders of magnitude and a decreased thermal conductivity and band gap. In this report, we elaborate on the synthesis and properties of the novel ternary compound.
Collapse
Affiliation(s)
- Günther Thiele
- Fachbereich Biologie, Chemie und Pharmazie , Freie Universität Berlin , Fabeckstraße 34-36 , 14195 Berlin , Germany
| | - Philipp Bron
- Fachbereich Chemie und Wissenschaftliches Zentrum für Materialwissenschaften , Philipps-Universität Marburg , Hans-Meerwein-Straße 4 , 35043 Marburg , Germany
| | - Sina Lippert
- Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften , Philipps-Universität Marburg , Renthof 5 , 35032 Marburg , Germany
| | - Frederik Nietschke
- Fakultät für Chemie und Mineralogie, Institut für Mineralogie, Kristallographie und Materialwissenschaften , Universität Leipzig , Scharnhorststraße 20 , 04275 Leipzig , Germany
| | - Oliver Oeckler
- Fakultät für Chemie und Mineralogie, Institut für Mineralogie, Kristallographie und Materialwissenschaften , Universität Leipzig , Scharnhorststraße 20 , 04275 Leipzig , Germany
| | - Martin Koch
- Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften , Philipps-Universität Marburg , Renthof 5 , 35032 Marburg , Germany
| | - Bernhard Roling
- Fachbereich Chemie und Wissenschaftliches Zentrum für Materialwissenschaften , Philipps-Universität Marburg , Hans-Meerwein-Straße 4 , 35043 Marburg , Germany
| | - Stefanie Dehnen
- Fachbereich Chemie und Wissenschaftliches Zentrum für Materialwissenschaften , Philipps-Universität Marburg , Hans-Meerwein-Straße 4 , 35043 Marburg , Germany
| |
Collapse
|
39
|
Hafiz SB, Scimeca M, Sahu A, Ko DK. Colloidal quantum dots for thermal infrared sensing and imaging. NANO CONVERGENCE 2019; 6:7. [PMID: 30834471 PMCID: PMC6399364 DOI: 10.1186/s40580-019-0178-1] [Citation(s) in RCA: 32] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2018] [Accepted: 02/22/2019] [Indexed: 05/15/2023]
Abstract
Colloidal quantum dots provide a powerful materials platform to engineer optoelectronics devices, opening up new opportunities in the thermal infrared spectral regions where no other solution-processed material options exist. This mini-review collates recent research reports that push the technological envelope of colloidal quantum dot-based photodetectors toward mid- and long-wavelength infrared. We survey the synthesis and characterization of various thermal infrared colloidal quantum dots reported to date, discuss the basic theory of device operation, review the fabrication and measurement of photodetectors, and conclude with the future prospect of this emerging technology.
Collapse
Affiliation(s)
- Shihab Bin Hafiz
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 USA
| | - Michael Scimeca
- Department of Chemical and Biomolecular Engineering, New York University, Brooklyn, NY 11201 USA
| | - Ayaskanta Sahu
- Department of Chemical and Biomolecular Engineering, New York University, Brooklyn, NY 11201 USA
| | - Dong-Kyun Ko
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 USA
| |
Collapse
|
40
|
Tang X, Ackerman MM, Shen G, Guyot-Sionnest P. Towards Infrared Electronic Eyes: Flexible Colloidal Quantum Dot Photovoltaic Detectors Enhanced by Resonant Cavity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1804920. [PMID: 30767425 DOI: 10.1002/smll.201804920] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2018] [Revised: 01/31/2019] [Indexed: 06/09/2023]
Abstract
Electronic eye cameras are receiving increasing interest due to their unique advantages such as wide field of view, low aberrations, and simple imaging optics compared to conventional planar focal plane arrays. However, the spectral sensing ranges of most electronic eyes are confined to the visible, which is limited by the energy gaps of the sensing materials and by fabrication obstacles. Here, a potential route leading to infrared electronic eyes is demonstrated by exploring flexible colloidal quantum dot (CQD) photovoltaic detectors. Benefitting from their tunable optical response and the ease of fabrication as solution processable materials, mercury telluride (HgTe) CQD detectors with mechanical flexibility, wide spectral sensing range, fast response, and high detectivity are demonstrated. A strategy is provided to further enhance the light absorption in flexible detectors by integrating a Fabry-Perot resonant cavity. Integrated short-wave IR detectors on flexible substrates have peak D* of 7.5 × 1010 Jones at 2.2 µm at room temperature and promise the development of infrared electronic eyes with high-resolution imaging capability. Finally, infrared images are captured with the flexible CQD detectors at varying bending conditions, showing a practical approach to sensitive infrared electronic eyes beyond the visible range.
Collapse
Affiliation(s)
- Xin Tang
- James Franck Institute, University of Chicago, IL, 60637, USA
| | - Matthew M Ackerman
- James Franck Institute, University of Chicago, IL, 60637, USA
- Department of Chemistry, University of Chicago, IL, 60637, USA
| | - Guohua Shen
- James Franck Institute, University of Chicago, IL, 60637, USA
- Department of Chemistry, University of Chicago, IL, 60637, USA
| | - Philippe Guyot-Sionnest
- James Franck Institute, University of Chicago, IL, 60637, USA
- Department of Chemistry, University of Chicago, IL, 60637, USA
- Department of Physics, University of Chicago, IL, 60637, USA
| |
Collapse
|
41
|
Gréboval C, Izquierdo E, Livache C, Martinez B, Dufour M, Goubet N, Moghaddam N, Qu J, Chu A, Ramade J, Aubin H, Cruguel H, Silly M, Lhuillier E, Ithurria S. Impact of dimensionality and confinement on the electronic properties of mercury chalcogenide nanocrystals. NANOSCALE 2019; 11:3905-3915. [PMID: 30758021 DOI: 10.1039/c8nr09644a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
We demonstrate the growth of 2D nanoplatelets (NPLs) made of a HgTe/CdS heterostructure, with an optical absorption reaching the shortwave infrared range. The material is an interesting platform to investigate the effect of dimensionality (0D vs. 2D) and confinement on the electronic spectrum and carrier dynamics in colloidal materials. We bring consistent evidence for the p-type nature of this material from transport and photoemission measurements. The majority carrier dynamics probed using pump-probe photoemission is found to be mostly dependent on the presence of a confinement barrier at the surface rather than on the material dimensionality. The minority carrier, on the other hand, is strongly affected by the material shape showing a longer lived minority carrier in 2D NPLs compared to their 0D equivalent with a similar band gap. Finally, we test the potential of this material for photodetection in the short-wave infrared range (SWIR) and show that fast photoresponse and detectivity reaching 109 Jones at room temperature can be achieved.
Collapse
Affiliation(s)
- Charlie Gréboval
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | | | | | | | | | | | | | | | | | | | | | | | | | | | | |
Collapse
|
42
|
Livache C, Martinez B, Goubet N, Ramade J, Lhuillier E. Road Map for Nanocrystal Based Infrared Photodetectors. Front Chem 2018; 6:575. [PMID: 30547026 PMCID: PMC6279848 DOI: 10.3389/fchem.2018.00575] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2018] [Accepted: 11/05/2018] [Indexed: 11/22/2022] Open
Abstract
Infrared (IR) sensors based on epitaxially grown semiconductors face two main challenges which are their prohibitive cost and the difficulty to rise the operating temperature. The quest for alternative technologies which will tackle these two difficulties requires the development of new IR active materials. Over the past decade, significant progresses have been achieved. In this perspective, we summarize the current state of the art relative to nanocrystal based IR sensing and stress the main materials, devices and industrial challenges which will have to be addressed over the 5 next years.
Collapse
Affiliation(s)
- Clément Livache
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, Paris, France
| | - Bertille Martinez
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, Paris, France
| | - Nicolas Goubet
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, Paris, France
| | - Julien Ramade
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, Paris, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, Paris, France
| |
Collapse
|
43
|
Ilyas N, Li D, Song Y, Zhong H, Jiang Y, Li W. Low-Dimensional Materials and State-of-the-Art Architectures for Infrared Photodetection. SENSORS (BASEL, SWITZERLAND) 2018; 18:E4163. [PMID: 30486432 PMCID: PMC6308609 DOI: 10.3390/s18124163] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/29/2018] [Revised: 11/22/2018] [Accepted: 11/22/2018] [Indexed: 12/13/2022]
Abstract
Infrared photodetectors are gaining remarkable interest due to their widespread civil and military applications. Low-dimensional materials such as quantum dots, nanowires, and two-dimensional nanolayers are extensively employed for detecting ultraviolet to infrared lights. Moreover, in conjunction with plasmonic nanostructures and plasmonic waveguides, they exhibit appealing performance for practical applications, including sub-wavelength photon confinement, high response time, and functionalities. In this review, we have discussed recent advances and challenges in the prospective infrared photodetectors fabricated by low-dimensional nanostructured materials. In general, this review systematically summarizes the state-of-the-art device architectures, major developments, and future trends in infrared photodetection.
Collapse
Affiliation(s)
- Nasir Ilyas
- School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Dongyang Li
- School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Yuhao Song
- School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Hao Zhong
- School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Yadong Jiang
- School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Wei Li
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
| |
Collapse
|
44
|
Abstract
From a niche field over 30 years ago, quantum dots (QDs) have developed into viable materials for many commercial optoelectronic devices. We discuss the advancements in Pb-based QD solar cells (QDSCs) from a viewpoint of the pathways an excited state can take when relaxing back to the ground state. Systematically understanding the fundamental processes occurring in QDs has led to improvements in solar cell efficiency from ~3% to over 13% in 8 years. We compile data from ~200 articles reporting functioning QDSCs to give an overview of the current limitations in the technology. We find that the open circuit voltage limits the device efficiency and propose some strategies for overcoming this limitation.
Collapse
|
45
|
Hudson MH, Chen M, Kamysbayev V, Janke EM, Lan X, Allan G, Delerue C, Lee B, Guyot-Sionnest P, Talapin DV. Conduction Band Fine Structure in Colloidal HgTe Quantum Dots. ACS NANO 2018; 12:9397-9404. [PMID: 30125488 DOI: 10.1021/acsnano.8b04539] [Citation(s) in RCA: 30] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
HgTe colloidal quantum dots (QDs) are of interest because quantum confinement of semimetallic bulk HgTe allows one to synthetically control the bandgap throughout the infrared. Here, we synthesize highly monodisperse HgTe QDs and tune their doping both chemically and electrochemically. The monodispersity of the QDs was evaluated using small-angle X-ray scattering (SAXS) and suggests a diameter distribution of ∼10% across multiple batches of different sizes. Electron-doped HgTe QDs display an intraband absorbance and bleaching of the first two excitonic features. We see splitting of the intraband peaks corresponding to electronic transitions from the occupied 1Se state to a series of nondegenerate 1Pe states. Spectroelectrochemical studies reveal that the degree of splitting and relative intensity of the intraband features remain constant across doping levels up to two electrons per QD. Theoretical modeling suggests that the splitting of the 1Pe level arises from spin-orbit coupling and reduced QD symmetry. The fine structure of the intraband transitions is observed in the ensemble studies due to the size uniformity of the as-synthesized QDs and strong spin-orbit coupling inherent to HgTe.
Collapse
Affiliation(s)
| | | | | | | | | | - Guy Allan
- University of Lille, CNRS, Centrale Lille, ISEN, University of Valenciennes , UMR 8520 - IEMN, F-59000 Lille , France
| | - Christophe Delerue
- University of Lille, CNRS, Centrale Lille, ISEN, University of Valenciennes , UMR 8520 - IEMN, F-59000 Lille , France
| | | | | | | |
Collapse
|
46
|
Goubet N, Livache C, Martinez B, Xu XZ, Ithurria S, Royer S, Cruguel H, Patriarche G, Ouerghi A, Silly M, Dubertret B, Lhuillier E. Wave-Function Engineering in HgSe/HgTe Colloidal Heterostructures To Enhance Mid-infrared Photoconductive Properties. NANO LETTERS 2018; 18:4590-4597. [PMID: 29812951 DOI: 10.1021/acs.nanolett.8b01861] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
The use of intraband transition is an interesting alternative path for the design of optically active complex colloidal materials in the mid-infrared range. However, so far, the performance obtained for photodetection based on intraband transition remains much smaller than the one relying on interband transition in narrow-band-gap materials operating at the same wavelength. New strategies have to be developed to make intraband materials more effective. Here, we propose growing a heterostructure of HgSe/HgTe as a means of achieving enhanced intraband-based photoconduction. We first tackle the synthetic challenge of growing a heterostructure on soft (Hg-based) material. The electronic spectrum of the grown heterostructure is then investigated using a combination of numerical simulation, infrared spectroscopy, transport measurement, and photoemission. We report a type-II band alignment with reduced doping compared with a core-only object and boosted hole conduction. Finally, we probe the photoconductive properties of the heterostructure while resonantly exciting the intraband transition by using a high-power-density quantum cascade laser. Compared to the previous generation of material based on core-only HgSe, the heterostructures have a lower dark current, stronger temperature dependence, faster photoresponse (with a time response below 50 μs), and detectivity increased by a factor of 30.
Collapse
Affiliation(s)
- Nicolas Goubet
- Sorbonne Université, UPMC Univ. Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris , 4 place Jussieu , 75005 Paris , France
- Laboratoire de Physique et d'Etude des Matériaux , ESPCI-ParisTech , PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS, 10 rue Vauquelin , 75005 Paris , France
| | - Clément Livache
- Sorbonne Université, UPMC Univ. Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris , 4 place Jussieu , 75005 Paris , France
- Laboratoire de Physique et d'Etude des Matériaux , ESPCI-ParisTech , PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS, 10 rue Vauquelin , 75005 Paris , France
| | - Bertille Martinez
- Sorbonne Université, UPMC Univ. Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris , 4 place Jussieu , 75005 Paris , France
- Laboratoire de Physique et d'Etude des Matériaux , ESPCI-ParisTech , PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS, 10 rue Vauquelin , 75005 Paris , France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux , ESPCI-ParisTech , PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS, 10 rue Vauquelin , 75005 Paris , France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux , ESPCI-ParisTech , PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS, 10 rue Vauquelin , 75005 Paris , France
| | - Sébastien Royer
- Sorbonne Université, UPMC Univ. Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris , 4 place Jussieu , 75005 Paris , France
| | - Hervé Cruguel
- Sorbonne Université, UPMC Univ. Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris , 4 place Jussieu , 75005 Paris , France
| | - Gilles Patriarche
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , C2N Marcoussis , 91460 Marcoussis , France
| | - Abdelkarim Ouerghi
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , C2N Marcoussis , 91460 Marcoussis , France
| | - Mathieu Silly
- Synchrotron-SOLEIL , Saint-Aubin, BP48 , F91192 Gif sur Yvette , Cedex , France
| | - Benoit Dubertret
- Laboratoire de Physique et d'Etude des Matériaux , ESPCI-ParisTech , PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS, 10 rue Vauquelin , 75005 Paris , France
| | - Emmanuel Lhuillier
- Sorbonne Université, UPMC Univ. Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris , 4 place Jussieu , 75005 Paris , France
| |
Collapse
|
47
|
Zhou L, Chen L, Ren G, Zhu Z, Zhao H, Wang H, Zhang W, Han J. Monitoring cis-to-trans isomerization of azobenzene using terahertz time-domain spectroscopy. Phys Chem Chem Phys 2018; 20:27205-27213. [DOI: 10.1039/c8cp04570d] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
We present terahertz time-domain spectroscopy (THz-TDS) to explore the conformational dynamics of thermally induced and photoinduced isomerization of azobenzene.
Collapse
Affiliation(s)
- Lu Zhou
- Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering
- Tianjin University
- Tianjin 300072
- China
| | - Ligang Chen
- Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering
- Tianjin University
- Tianjin 300072
- China
| | - Guanhua Ren
- Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering
- Tianjin University
- Tianjin 300072
- China
| | - Zhongjie Zhu
- Shanghai Institute of Applied Physics
- Chinese Academy of Sciences
- Shanghai 201800
- P. R. China
| | - Hongwei Zhao
- Shanghai Institute of Applied Physics
- Chinese Academy of Sciences
- Shanghai 201800
- P. R. China
| | - Huabin Wang
- Chongqing Engineering Research Center of High-Resolution and Three-Dimensional Dynamic Imaging Technology
- Chongqing Institute of Green and Intelligent Technology
- Chinese Academy of Science
- Chongqing 400714
- China
| | - Weili Zhang
- Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering
- Tianjin University
- Tianjin 300072
- China
- School of Electrical and Computer Engineering
| | - Jiaguang Han
- Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering
- Tianjin University
- Tianjin 300072
- China
| |
Collapse
|