What Limits the Intrinsic Mobility of Electrons and Holes in Two Dimensional Metal Dichalcogenides?

High-Performance WS2 MOSFETs with Bilayer WS2 Contacts

WS2 is a promising transition-metal dichalcogenide (TMDC) for use as a channel material in extreme-scaled metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its monolayer thickness, high carrier mobility, and its potential for symmetric n-type and p-type MOSFET performance. However, the formation of stable, low-barrier-height contacts to monolayer TMDCs continues to be a challenge. This study introduces an innovative approach to realize high-performance WS2 MOSFETs by utilizing bilayer WS2 (2L-WS2) in the contact region grown through a two-step chemical vapor deposition process. The 2L-WS2 devices demonstrate a high I ON/I OFF ratio of 108 and a saturated drain current, I D(SAT), of 280 μA/μm (386 μA/μm) at room temperature (78 K), even while still using conventional metal (Pd or Ni) contacts. Devices featuring a 1L-WS2 channel and 2L-WS2 in the contact regions were also fabricated, and they exhibited performance comparable to that of 2L-WS2 devices. The devices also exhibit good stability with nearly identical performance after storage over a 13 month period. The study highlights the benefits of a hybrid channel thickness approach for TMDC transistors.

Exploring Anisotropic Carrier Transport in WSe2-WTe2 Superlattices: A Computational Study

Superlattice structures offer distinct benefits in modern semiconductor technology, enabling the development of a deeper understanding of their sublayer arising from the interfaces. However, the advancement of large-scale applications encounters additional concerns, such as the stability and performance of the superlattice. In this study, we employ density functional theory calculations combined with the Boltzmann transport theory to comprehensively analyze the electronic structural and transport properties of the hexagonal phase of WSe2 and the WSe2-WTe2 superlattice for their applications in carrier transport fields. Previous studies showed that longitudinal acoustics phonon limited carrier mobility determined by deformation potential theory (DPT) often compromises the accuracy and overestimates the relaxation time by 2 orders. Herein, we conduct an in-depth analysis of band structural and transport properties, addressing the aforementioned inconsistency by exclusively incorporating scattering from longitudinal optical phonons to accurately compute mobility using the Fröhlich interaction. Our findings reveal a significant enhancement in mobility for both electrons and holes in the WSe2-WTe2 superlattice, reaching 545 and 476 cm2 V-1 s-1, respectively, compared to 104 and 132 cm2 V-1 s-1 for WSe2, which suggests that this superlattice is a promising material for electronics and transport applications.

Electrical Polarity Modulation in V-Doped Monolayer WS2 for Homogeneous CMOS Inverters

As demand for higher integration density and smaller devices grows, silicon-based complementary metal-oxide-semiconductor (CMOS) devices will soon reach their ultimate limits. 2D transition metal dichalcogenides (TMDs) semiconductors, known for excellent electrical performance and stable atomic structure, are seen as promising materials for future integrated circuits. However, controlled and reliable doping of 2D TMDs, a key step for creating homogeneous CMOS logic components, remains a challenge. In this study, a continuous electrical polarity modulation of monolayer WS2 from intrinsic n-type to ambipolar, then to p-type, and ultimately to a quasi-metallic state is achieved simply by introducing controllable amounts of vanadium (V) atoms into the WS2 lattice as p-type dopants during chemical vapor deposition (CVD). The achievement of purely p-type field-effect transistors (FETs) is particularly noteworthy based on the 4.7 at% V-doped monolayer WS2, demonstrating a remarkable on/off current ratio of 105. Expanding on this triumph, the first initial prototype of ultrathin homogeneous CMOS inverters based on monolayer WS2 is being constructed. These outcomes validate the feasibility of constructing homogeneous CMOS devices through the atomic doping process of 2D materials, marking a significant milestone for the future development of integrated circuits.

From bulk effective mass to 2D carrier mobility accurate prediction via adversarial transfer learning

Data scarcity is one of the critical bottlenecks to utilizing machine learning in material discovery. Transfer learning can use existing big data to assist property prediction on small data sets, but the premise is that there must be a strong correlation between large and small data sets. To extend its applicability in scenarios with different properties and materials, here we develop a hybrid framework combining adversarial transfer learning and expert knowledge, which enables the direct prediction of carrier mobility of two-dimensional (2D) materials using the knowledge learned from bulk effective mass. Specifically, adversarial training ensures that only common knowledge between bulk and 2D materials is extracted while expert knowledge is incorporated to further improve the prediction accuracy and generalizability. Successfully, 2D carrier mobilities are predicted with the accuracy over 90% from only crystal structure, and 21 2D semiconductors with carrier mobilities far exceeding silicon and suitable bandgap are successfully screened out. This work enables transfer learning in simultaneous cross-property and cross-material scenarios, providing an effective tool to predict intricate material properties with limited data.

Computational approach to enhance thermoelectric performance of Ag2Se by S and Te substitutions

Designing an n-type thermoelectric material with a high thermoelectric figure of merit at near room temperature is extremely challenging. Generally, pristine Ag2Se reveals unusually low thermal conductivity along with a high electrical conductivity and Seebeck coefficient, which leads to high thermoelectric performance (n-type) at room temperature. Herein, we report a pseudo-ternary phase (Ag2Se0.5Te0.25S0.25) that exhibits significantly high thermoelectric performance (zT ∼ 2.1) even at 400 K. First-principles calculation reveals that the Rashba type of spin-dependent band spitting, which originates due to sulfur and tellurium substitution, helps to improve the thermopower magnitude. We also show that the intrinsic carrier mobility is not only controlled by the carrier effective mass but is substantially limited by longitudinal acoustic and optical phonon modes, which is an extension of the deformation potential theory. Locally off-center sulfur atoms, together with the increase in configurational entropy via substitution of Te and S atoms in Ag2Se, lead to a drastic reduction in the lattice thermal conductivity (klat ∼ 0.34 W m-1 K-1 at 400 K). The Rashba effect coupled with the configurational entropy synergistically results in a high thermoelectric figure of merit in the n-type thermoelectric material working in the near-room-temperature regime.

High-throughput screening of the transport behavior of tetragonal perovskites

Halide perovskites have attracted attention due to their low cost and excellent optoelectronic properties. Although their optical properties gained widespread consensus, there was still divergence in understanding carrier transport behavior. In this study, the mobility of tetragonal perovskites was investigated by empirical models, including longitudinal acoustic phonon (LAP) and polar optical phonon (POP) models. The results revealed that the mobility predicted from the LAP model was much higher than that from the POP model. A longitudinal optical phonon (LOP) was considered as the decisive scattering source for charge carriers in perovskites. Furthermore, the mobility was extremely sensitive to z-axis strain, and 8 types of perovskites with high carrier mobility were screened. Using the experimental lattice constants, the predicted mobility of CsSnI3 was μe,z = 1428 and μh,z = 2310 cm2 V-1 s-1, respectively. The tetragonal CsSnI3 has high mobility and moderate bandgaps, suggesting potential applications in high-efficiency solar cells.

Point Defect Limited Carrier Mobility in 2D Transition Metal Dichalcogenides

2D transition metal dichalcogenide (MX2) semiconductors are promising candidates for electronic and optoelectronic applications. However, they have relatively low charge carrier mobility at room temperature. Defects are important scattering sources, while their quantitative roles remain unclear. Here we employ first-principles methods to accurately calculate the scatterings by different types of defects (chalcogen vacancies, antisites, and oxygen substitutes) and the resulting carrier mobilities for various MX2 (M = Mo/W and X = S/Se). We find that for the same X, WX2 always has a higher mobility than MoX2, regardless of defect type and carrier type. Further analyses attribute this to the universally weaker electron-defect coupling in WX2. Moreover, we find filling the chalcogen vacancy with O always improves the mobility, while filling by a metal atom decreases the mobility except for WSe2. Finally, we identify the critical defect concentrations where the defect- and phonon-limited mobilities cross, providing guidelines for experimental optimization.

Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications

Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next-generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next-generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light-emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed.

Quantum octets in high mobility pentagonal two-dimensional PdSe2

Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm2/Vs at 300 K and 2 K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations that persist at all densities, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.

Enhancing the Carrier Transport in Monolayer MoS2 through Interlayer Coupling with 2D Covalent Organic Frameworks

The coupling of different 2D materials (2DMs) to form van der Waals heterostructures (vdWHs) is a powerful strategy for adjusting the electronic properties of 2D semiconductors, for applications in opto-electronics and quantum computing. 2D molybdenum disulfide (MoS2 ) represents an archetypical semiconducting, monolayer thick versatile platform for the generation of hybrid vdWH with tunable charge transport characteristics through its interfacing with molecules and assemblies thereof. However, the physisorption of (macro)molecules on 2D MoS2 yields hybrids possessing a limited thermal stability, thereby jeopardizing their technological applications. Herein, the rational design and optimized synthesis of 2D covalent organic frameworks (2D-COFs) for the generation of MoS2 /2D-COF vdWHs exhibiting strong interlayer coupling effects are reported. The high crystallinity of the 2D-COF films makes it possible to engineer an ultrastable periodic doping effect on MoS2 , boosting devices' field-effect mobility at room temperature. Such a performance increase can be attributed to the synergistic effect of the efficient interfacial electron transfer process and the pronounced suppression of MoS2 's lattice vibration. This proof-of-concept work validates an unprecedented approach for the efficient modulation of the electronic properties of 2D transition metal dichalcogenides toward high-performance (opto)electronics for CMOS digital circuits.

HfSe2: Unraveling the microscopic reason for experimental low mobility

Monolayer HfSe2, in the family of transition metal dichalcogenides (TMDCs), is a potential thermoelectric candidate due to its low thermal conductivity. While its mobility remains low as in other 2D TMDCs is inconceivable for electronic and thermoelectric applications. Earlier theoretical attempts have failed to give justification for the orders of low experimental mobility obtained for monolayer HfSe2. We calculate the carrier mobility in the framework of the density functional perturbation theory in conjunction with the Boltzmann transport equation and correctly ascertain the experimental value. We also calculate the carrier mobility with the previously employed method, the deformation potential (DP) model, to figure out the reason for its failure. We found that it is the strong electron-optical phonon interaction that is causing the low mobility. As the DP model does not account for the optical phonons, it overestimates the relaxation time by an order of two and also underestimates the temperature dependence of mobility. A strong polar type interaction is evidenced as a manifestation of a discontinuity in the first derivative of the optical-phonons at the K and Γ points as well as a dispersive optical phonon at the K point. We also included the spin-orbit coupling which leads to an energy splitting of ∼330 meV and significantly affects mobility and scattering rates.

Vibrational Dichroism of Chiral Valley Phonons

Valley degrees of freedom in transition metal dichalcogenides thoroughly influence electron-phonon coupling and its nonequilibrium dynamics. We conducted a first-principles study of the quantum kinetics of chiral phonons following valley-selective carrier excitation with circularly polarized light. Our numerical investigations treat the ultrafast dynamics of electrons and phonons on equal footing within a parameter-free ab initio framework. We report the emergence of valley-polarized phonon populations in monolayer MoS2 that can be selectively excited at either the K or K' valleys depending on the light helicity. The resulting vibrational state is characterized by a distinctive chirality, which lifts time-reversal symmetry of the lattice on transient time scales. We show that chiral valley phonons can further lead to fingerprints of vibrational dichroism detectable by ultrafast diffuse scattering and persist beyond 10 ps. The valley polarization of nonequilibrium phonon populations could be exploited as an information carrier, thereby extending the paradigm of valleytronics to the domain of vibrational excitations.

Mobility Enhancement of Strained MoS2 Transistor on Flat Substrate

Strain engineering has been proposed as a promising method to boost the carrier mobility of two-dimensional (2D) semiconductors. However, state-of-the-art straining approaches are largely based on putting 2D semiconductors on flexible substrates or rough substrate with nanostructures (e.g., nanoparticles, nanorods, ripples), where the observed mobility change is not only dependent on channel strain but could be impacted by the change of dielectric environment as well as rough interface scattering. Therefore, it remains an open question whether the pure lattice strain could improve the carrier mobilities of 2D semiconductors, limiting the achievement of high-performance 2D transistors. Here, we report a strain engineering approach to fabricate highly strained MoS2 transistors on a flat substrate. By mechanically laminating a prefabricated MoS2 transistor onto a custom-designed trench structure on flat substrate, well-controlled strain can be uniformly generated across the 2D channel. In the meantime, the substrate and the back-gate dielectric layer remain flat without any roughness-induced scattering effect or variation of the dielectric environment. Based on this technique, we demonstrate the MoS2 electron mobility could be enhanced by tension strain and decreased by compression strain, consistent with theoretical predictions. The highest mobility enhancement is 152% for monolayer MoS2 and 64% for bilayer MoS2 transistors, comparable to that of a silicon device. Our method not only provides a compatible approach to uniformly strain the layered semiconductors on flat and solid substrate but also demonstrates an effective method to boost the carrier mobilities of 2D transistors.

Investigation of the mechanical and transport properties of InGeX3 (X = S, Se and Te) monolayers using density functional theory and machine learning

Recently, novel 2D InGeTe₃ has been successfully synthesized and attracted attention due to its excellent properties. In this study, we investigated the mechanical properties and transport behavior of InGeX₃ (X = S, Se and Te) monolayers using density functional theory (DFT) and machine learning (ML). The key physical parameters related to mechanical properties, including Poisson's ratio, elastic modulus, tensile strength and critical strain, were revealed. Using a ML method to train DFT data, we developed a neuroevolution-potential (NEP) to successfully predict the mechanical properties and lattice thermal conductivity. The fracture behavior predicted using NEP-based MD simulations in a large supercell containing 20 000 atoms could be verified using DFT. Due to the effects of size, these predicted physical parameters have a slight difference between DFT and ML methods. At 300 K, these monolayers exhibited a low thermal conductivity with the values of 13.27 ± 0.24 W m^-1 K^-1 for InGeS₃, 7.68 ± 0.30 W m^-1 K^-1 for InGeSe₃, and 3.88 ± 0.09 W m^-1 K^-1 for InGeTe₃, respectively. The Boltzmann transport equation (BTE) including all electron-phonon interactions was used to accurately predict the electron mobility. Compared with InGeS₃ and InGeSe₃, the InGeTe₃ monolayer showed flexible mechanical behavior, low thermal conductivity and high mobility.

Impact of Large Gate Voltages and Ultrathin Polymer Electrolytes on Carrier Density in Electric-Double-Layer-Gated Two-Dimensional Crystal Transistors

Electric-double-layer (EDL) gating can induce large capacitance densities (∼1-10 μF cm^-2) in two-dimensional (2D) semiconductors; however, several properties of the electrolyte limit performance. One property is the electrochemical activity which limits the gate voltage (V_G) that can be applied and therefore the maximum extent to which carriers can be modulated. A second property is electrolyte thickness, which sets the response speed of the EDL gate and therefore the time scale over which the channel can be doped. Typical thicknesses are on the order of micrometers, but thinner electrolytes (nanometers) are needed for very-large-scale-integration (VLSI) in terms of both physical thickness and the speed that accompanies scaling. In this study, finite element modeling of an EDL-gated field-effect transistor (FET) is used to self-consistently couple ion transport in the electrolyte to carrier transport in the semiconductor, in which density of states, and therefore quantum capacitance, is included. The model reveals that 50 to 65% of the applied potential drops across the semiconductor, leaving 35 to 50% to drop across the two EDLs. Accounting for the potential drop in the channel suggests that higher carrier densities can be achieved at larger applied V_G without concern for inducing electrochemical reactions. This insight is tested experimentally via Hall measurements of graphene FETs for which V_G is extended from ±3 to ±6 V. Doubling the gate voltage increases the sheet carrier density by an additional 2.3 × 10¹³ cm^-2 for electrons and 1.4 × 10¹³ cm^-2 for holes without inducing electrochemistry. To address the need for thickness scaling, the thickness of the solid polymer electrolyte, poly(ethylene oxide) (PEO):CsClO₄, is decreased from 1 μm to 10 nm and used to EDL gate graphene FETs. Sheet carrier density measurements on graphene Hall bars prove that the carrier densities remain constant throughout the measured thickness range (10 nm-1 μm). The results indicate promise for overcoming the physical and electrical limitations to VLSI while taking advantage of the ultrahigh carrier densities induced by EDL gating.

Large-Area Black Phosphorus/PtSe2 Schottky Junction for High Operating Temperature Broadband Photodetectors

High operating temperature (HOT) broadband photodetectors are urgently necessary for extreme condition applications in infrared-guided missiles, infrared night vision, fire safety imaging, and space exploration sensing. However, conventional photodetectors show dramatic carrier mobility decreases and carrier losses with low photoresponsivity at HOT due to the increased carrier scattering in channels at high temperatures. Herein, the HOT broadband photodetectors from room temperature to 470 K are developed for the first time by large-area black phosphorus (BP)/PtSe₂ films device arrays via a depletion-enhanced photocarrier dynamics strategy. Attributed to the 2D Schottky junction at BP/PtSe₂ interface and resulting in full depleted working channels, the BP/PtSe₂ photodetector arrays exhibit high tolerance to carrier mobility decrease during the increasing operating temperature in a wide wavelength range from 532 to 2200 nm. Thus, the photodetector shows a state-of-the-art operating temperature at 470 K with the photo-responsivity (R) and specific detectivity (D*) of 25 A W^-1 and 6.4 × 10¹¹ Jones under 1850 nm illumination, respectively. Moreover, BP/PtSe₂ photodetector arrays show high-uniformity photo-response in a large area. This work provides new strategies for high-performance broadband photodetector arrays with HOT by Schottky junction of large-area BP/PtSe₂ films.

A first-principles study of 1D and 2D C60nanostructures: strain effects on band alignments and carrier mobility

In the breakthrough progress made in the latest experiment Houet al(2022Nature606507), 2DC60polymer was exfoliated from the quasi-hexagonal bulk crystals. BulkC60polymer with quasi-tetragonal phase was found to easily form 1D fullerene structure withC60molecules connected by C=C. Inspired by the experiment, we investigate the strain behaviors of 1D and 2DC60polymers by first-principles calculations. Some physical properties of these low dimensionalC60polymers, including structural stability, elastic behavior, band alignment and carrier mobility, are predicted. Compared with fullereneC60molecule, 1D and 2DC60polymers are metastable. At absolute zero temperature, 1DC60bears a uniaxial tensile strain less than 11.5%, and 2D monolayerC60withstands a biaxial tensile strain less than 7.5%. At 300 K,ab initiomolecular dynamics confirm that they can withstand the strains of 9% and 5%, respectively. Strain engineering can adjust the absolute position of the band edge. In the absence of strain, carrier mobility is predicted to beµ_e= 398 andµ_h= 322cm2V-1s-1for 1DC60polymer, andμe,x=74/μe,y= 34cm2V-1s-1andμh,x=646/μh,y= 1487cm2V-1s-1for 2DC60polymer. Compared with other carbon based semiconductors, theseC60polymers exhibit high effective mass, resulting in low mobility.

Two-Dimensional Semiconductors with High Intrinsic Carrier Mobility at Room Temperature

Two-dimensional semiconductors have demonstrated great potential for next-generation electronics and optoelectronics, however, the current 2D semiconductors suffer from intrinsically low carrier mobility at room temperature, which significantly limits their applications. Here we discover a variety of new 2D semiconductors with mobility 1 order of magnitude higher than the current ones and even higher than bulk silicon. The discovery was made by developing effective descriptors for computational screening of the 2D materials database, followed by high-throughput accurate calculation of the mobility using a state-of-the-art first-principles method that includes quadrupole scattering. The exceptional mobilities are explained by several basic physical features; particularly, we find a new feature: carrier-lattice distance, which is easy to calculate and correlates well with mobility. Our Letter opens up new materials for high performance device performance and/or exotic physics, and improves the understanding of the carrier transport mechanism.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices

Since the isolation of graphene in 2004, two-dimensional (2D) materials research has rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of emergent applications. The unique 2D structure offers an open canvas to tailor and functionalize 2D materials through layer number, defects, morphology, moiré pattern, strain, and other control knobs. Through this review, we aim to highlight the most recent discoveries in the following topics: theory-guided synthesis for enhanced control of 2D morphologies, quality, yield, as well as insights toward novel 2D materials; defect engineering to control and understand the role of various defects, including in situ and ex situ methods; and properties and applications that are related to moiré engineering, strain engineering, and artificial intelligence. Finally, we also provide our perspective on the challenges and opportunities in this fascinating field.

Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe2 Semiconductor Devices

Palladium diselenide (PdSe₂), as an emerging two-dimensional (2D) layered material, is gaining growing attention in nanoelectronics and optoelectronics due to its thickness-dependent band gap, high carrier mobility, and good air stability. However, its asymmetric pentagon structure is inclined to breed defects. Herein, the intrinsic Se vacancy-induced trap states and their influence on the hopping transport in PdSe₂ are systematically investigated. We provide direct evidence that Se vacancies exist in the fresh PdSe₂ samples, which results in the localized trapping states inside the band gap. For the few-layer PdSe₂, at 77 K, the trap density (D_it) near the midgap is about 2.2 × 10¹³ cm^-2 eV^-1, whereas at 295 K, the D_it value increases to ∼7.1 × 10¹³ cm^-2 eV^-1. By comparison, the multilayer PdSe₂ shows nonobvious temperature-dependent trap behaviors with almost unchanged D_it values of ∼8.1 × 10¹² cm^-2 eV^-1 at midgap in the temperature range between 77 and 295 K. Thus, trap states in the few-layer PdSe₂ are more vulnerable to temperature effect. Transport measurements demonstrated that both few-layer and multilayer PdSe₂ field-effect transistor (FET) devices show n-type dominant ambipolar behaviors. The electron mobility in the multilayer PdSe₂ FET is nearly 15-fold higher than that in the few-layer PdSe₂ FET at 315 K, probably owing to the decreased effective mass and suppression of charge impurity scattering in the thicker channel material. However, both FET devices exhibit variable-range hopping over a temperature range from 77 to 240 K and thermally activated hopping at temperatures above 240 K. The hopping transport mechanism is strongly associated with the Se vacancy-induced localized states with poor screening and strong potential fluctuations. This study reveals the important role of structural defects in tailoring and improving the charge transport properties of PdSe₂.

Biaxial strain improving carrier mobility for inorganic perovskite:ab initioBoltzmann transport equation

Inorganic halide perovskites have attracted interest due to their high efficiency and low cost. Considering the uncertainty of experimental measurements, it was important to predict the upper limit of carrier mobility. In this study, theab initioBoltzmann transport equation, including all electron-phonon interactions, was used to accurately predict the mobilities of CsPbI₃, CsSnI₃, CsPbBr₃, and CsSnBr₃. Using the iterative Boltzmann transport equation (IBTE), the calculated mobility for CsPbI₃isµ_e= 512/µ_h= 379 cm² V^-1 s^-1, and Sn-based perovskite exhibited high hole mobility. The longitudinal optical phonons associated with the stretching between halogen anions and divalent metal cations were revealed to be the dominant scattering source for the carriers. Furthermore, the effect of biaxial strain on mobility was investigated. We observed that biaxial compressive strain could improve the mobility of CsPbI₃and CsPbBr₃. Surprisingly, under a compressive strain of-2%, the mobilities of CsPbI₃using IBTE approach were improved toµ_e= 1176/µ_h= 936 cm² V^-1 s^-1. It was revealed that the compressive strain could decrease the effective mass of CsPbI₃and CsPbBr₃.

Van der Waals-Interface-Dominated All-2D Electronics

The interface is the device. As the feature size rapidly shrinks, silicon-based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short-channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high-quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all-2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all-2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all-2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all-2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon-based industrial technology is pointed out as a critical challenge.

Abnormally weak intervalley electron scattering in MoS2 monolayer: insights from the matching between electron and phonon bands

It is known that carrier mobility in layered semiconductors generally increases from two-dimensions (2D) to three-dimensions due to fewer scattering channels resulting from decreased densities of electron and phonon states. In this work, we find an abnormal decrease of electron mobility from monolayer to bulk MoS₂. By carefully analyzing the scattering mechanisms, we can attribute such abnormality to the stronger intravalley scattering in the monolayer but weaker intervalley scattering caused by few intervalley scattering channels and weaker corresponding electron-phonon couplings compared to the bulk case. We show that it is the matching between the electronic band structure and phonon spectrum rather than their densities of electronic and phonon states that determines scattering channels. We propose, for the first time, the phonon-energy-resolved matching function to identify the intra- and inter-valley scattering channels. Furthermore, we show that multiple valleys do not necessarily lead to strong intervalley scattering if: (1) the scattering channels, which can be explicitly captured by the distribution of the matching function, are few due to the small matching between the corresponding electron and phonon bands; and/or (2) the multiple valleys are far apart in the reciprocal space and composed of out-of-plane orbitals so that the corresponding electron-phonon coupling strengths are weak. Consequently, the searching scope of high-mobility 2D materials can be reasonably enlarged using the matching function as useful guidance with the help of band edge orbital analysis.

Two-dimensional semiconductor materials with high stability and electron mobility in group-11 chalcogenide compounds: MNX (M = Cu, Ag, Au; N = Cu, Ag, Au; X = S, Se, Te; M ≠ N)

It is still an urgent task to find new two-dimensional (2D) semiconductor materials with a suitable band gap, high stability and high mobility for the applications of next generation electronic devices. Based on first-principles calculations, we report a new class of 2D group-11-chalcogenide trielement monolayers (MNX, where M = Cu, Ag, Au; N = Cu, Ag, Au; X = S, Se, Te; M ≠ N) with a wide band gap, excellent stability (dynamic stability, thermodynamic stability and environmental stability) and high mobility. At the mixed density functional level, the energy band gap extends from 0.61 eV to 2.65 eV, covering the ultraviolet-A and visible light regions, which is critical for a broadband optical response. For δ-MNX monolayers, the carrier mobility is as high as 10⁴ cm² V^-1 s^-1 at room temperature. In particular, the mobility of δ-AgAuS is as high as 6.94 × 10⁴ cm² V^-1 s^-1, which is of great research significance for the application of electronic devices in the future. Based on the above advantages, group-11 chalcogenide MNX monomolecular films have broad prospects in the field of nanoelectronics and optoelectronics in the future.

Janus monolayer HfSO with improved optical properties as a novel material for photovoltaic and photocatalyst applications

First principles calculations were performed to investigate the photocatalytic behavior of 2D Janus monolayer HfSO at equilibrium and under the influence of strains and external electric fields.

Comprehensive understanding of intrinsic mobility and sub-10 nm quantum transportation in Ga2SSe monolayer

Two-dimensional chalcogenides could play an important role to solve the short channel effect and extend the Moore's law in the post-Moore's era due to the excellent performances in the spintronics...

Giant Spin Lifetime Anisotropy and Spin-Valley Locking in Silicene and Germanene from First-Principles Density-Matrix Dynamics

Through first-principles real-time density-matrix (FPDM) dynamics simulations, we investigated spin relaxation due to electron-phonon and electron-impurity scatterings with spin-orbit coupling (SOC) in two-dimensional Dirac materials silicene and germanene at finite temperatures. We discussed the applicability of conventional descriptions of spin relaxation mechanisms by Elliott-Yafet (EY) and D'yakonov-Perel' (DP) compared to the FPDM method, which is determined by a complex interplay of intrinsic SOC, external fields, and scattering strength. For example, the electric field dependence of the spin lifetime by FPDM is close to the DP mechanism for silicene at room temperature but similar to the EY mechanism for germanene. Because of its stronger SOC strength and buckled structure in contrast to graphene, germanene has a giant spin lifetime anisotropy and spin-valley locking effect under nonzero E_z and low temperatures. More importantly, germanene has a long spin lifetime (∼100 ns at 50 K) and an ultrahigh carrier mobility, making it advantageous for spin-valleytronic applications.

Origin of phonon-limited mobility in two-dimensional metal dichalcogenides

Metal dichalcogenides are novel two-dimensional (2D) semiconductors after the discovery of graphene. In this article, phonon-limited mobility for six kinds of 2D semiconductors with the composition of MX₂is reviewed, in which M (Cr, Mo and W) is the transition metal, and X (S and Se) is the chalcogen element. The review is divided into three parts. In the first part, we briefly introduce the calculation method of mobility, including the empirical model and Boltzmann transport theory (BTE). The application scope, merits and limitations of these methods are summarized. In the second part, we explore empirical models to calculate the mobility of MX₂, including longitudinal acoustic phonon, optical phonon (OP) and polar optical phonon (POP) models. The contribution of multi-valley to mobility is reviewed in the calculation. The differences between static and high-frequency dielectric constants (Δϵ) are only 0.13 and 0.03 for MoS₂and WS₂. Such a low value indicates that the polarization hardly changes in the external field. So, their mobility is not determined by POP, but by deformation potential models. Different from GaAs, POP scattering plays a decisive role in its mobility. Our investigations also reveal that the scattering from POP cannot be ignored in CrSe₂, MoSe₂and WSe₂. In the third parts, we investigate the mobility of MX₂using electron-phonon coupling matrix element, which is based on BTE from the framework of a many-body quantum-field theory. Valence band splitting of MoS₂and WS₂is induced by spin-orbit coupling effect, which leads to the increase of hole mobility. In particular, we review in detail the theoretical and experimental results of MoS₂mobility in recent ten years, and its mobility is also compared with other materials to deepen the understanding.

High-efficient ab initio Bayesian active learning method and applications in prediction of two-dimensional functional materials

Beyond the conventional trial-and-error method, machine learning offers a great opportunity to accelerate the discovery of functional materials, but still often suffers from difficulties such as limited materials data and the unbalanced distribution of target properties. Here, we propose the ab initio Bayesian active learning method that combines active learning and high-throughput ab initio calculations to accelerate the prediction of desired functional materials with ultrahigh efficiency and accuracy. We apply it as an instance to a large family (3119) of two-dimensional hexagonal binary compounds with unbalanced materials properties, and accurately screen out the materials with maximal electric polarization and proper photovoltaic band gaps, respectively, whereas the computational costs are significantly reduced by only calculating a few tenths of the possible candidates in comparison with a random search. This approach shows the enormous advantages for the cases with unbalanced distribution of target properties. It can be readily applied to seek a broad range of advanced materials.

Gold nanodot assembly within a cobalt chalcogenide nanoshell: Promotion of electrocatalytic activity

The assembly of functional nanoparticles within materials with unique architectures can improve the interfacial surfaces, defects, and active sites, which are key factors for the designing novel nanocatalysts. Nano metal-organic framework (NMOF) can be employed to fabricate nanodots-confined nanohybrids for use in electrocatalytic processes. Herein, we report a controlled synthesis of gold nanodot assembly within cobalt chalcogenide nanoshell (dots-in-shell Au/Co_xS_y nanohybrids). A cobalt-based NMOF (the cobalt-based zeolite imidazole framework, ZIF-67) is used as a versatile sacrificial template to yield dots-in-shell Au/Co_xS_y nanohybrids. Due to the synergistic effect of the well-dispersed Au nanodots and the thin Co_xS_y nanoshell, the obtained dots-in-shell Au/Co_xS_y nanohybrids exhibit enhanced performance for the oxygen evolution reaction (OER) with low overpotential values at a current density of 10 mA cm^-2 and a small Tafel slope (343 mV and 62 mV dec^-1, respectively).

Electronic structures and anisotropic carrier mobilities of monolayer ternary metal iodides MLaI5(M=Mg, Ca, Sr, Ba)

Exploiting two-dimensional (2D) materials with natural band gaps and anisotropic quasi-one-dimensional (quasi-1D) carrier transport character is essential in high-performance nanoscale transistors and photodetectors. Herein, the stabilities, electronic structures and carrier mobilities of 2D monolayer ternary metal iodides MLaI₅(M = Mg, Ca, Sr, Ba) have been explored by utilizing first-principles calculations combined with numerical calculations. It is found that exfoliating MLaI₅monolayers are feasible owing to low cleavage energy of 0.19-0.21 J m^-2and MLaI₅monolayers are thermodynamically stable based on phonon spectra. MLaI₅monolayers are semiconductors with band gaps ranging from 2.08 eV for MgLaI₅to 2.51 eV for BaLaI₅. The carrier mobility is reasonably examined considering both acoustic deformation potential scattering and polar optical phonon scattering mechanisms. All MLaI₅monolayers demonstrate superior anisotropic and quasi-1D carrier transport character due to the striped structures. In particular, the anisotropic ratios of electron and hole mobilities along different directions reach hundreds and tens for MLaI₅monolayers, respectively. Thus, the effective electron-hole spatial separation could be actually achieved. Moreover, the absolute locations of band edges of MLaI₅monolayers have been aligned. These results would provide fundamental insights for MLaI₅monolayers applying in nano-electronic and optoelectronic devices.

Role of flexural phonons in carrier mobility of two-dimensional semiconductors: free standing vs on substrate

Two-dimensional (2D) semiconductor is a promising material for future electronics. It is believed that the flexural phonon (FP) induced scattering plays an important role in the room-temperature carrier mobility, and the substrate can significantly affect such scattering. Here we develop an 'implicit' substrate model, which allows us to effectively quantify different effects of the substrate on the FP scattering. In conjunction with the first-principles calculations, we study the intrinsic mobilities of the holes in Sb and electrons in MoS₂as representative examples for 2D semiconductors. We find that the FP scattering is not dominant and is weaker than other scatterings such as that induced by longitudinal acoustic (LA) phonon. This is due to the significantly smaller electron-phonon-coupling (EPC) matrix elements for the FP compared with that for the LA phonon in the free-standing case; although the substrate enhances the FP EPC, it suppresses the FP population, making the FP scattering still weaker than the LA scattering. Our work improves the fundamental understanding of the role of FP and its interaction with the substrate in carrier mobility, and provides a computational model to study the substrate effects.

What Dictates Rashba Splitting in 2D van der Waals Heterobilayers

Rashba spin-orbit coupling enables electric control of spin states, promising enormous advances from conventional charge-based computing. Until now, a general scheme or a descriptor to find an optimal system with isolated spin states with large tunable splitting is still lacking. Here, based on first-principles calculations, we explore the microscopic physicochemical mechanism responsible for the Rashba effect in 2D van der Waals heterobilayers. We find that the difference in the Born effective charge of atoms at the interface can be used as a single-layer descriptor to predict heteropairs with large Rashba splitting, thus reducing the scaling factor in materials search. Moreover, we discover that for most 2D materials, the routinely used Rashba parameter α_R is not a good gauge of the effect's strength. From our general scheme, MoTe₂|Tl₂O and MoTe₂|PtS₂, with spin splitting above 120 meV, Rashba energy E_R = 94 meV, and wavenumber difference 2k₀ = 0.36 Å^-1 ("effective" α_R > 1 eVÅ), emerge as the best candidates for spin transistors at room temperature.

Promises and prospects of two-dimensional transistors

Two-dimensional (2D) semiconductors have attracted tremendous interest as atomically thin channels that could facilitate continued transistor scaling. However, despite many proof-of-concept demonstrations, the full potential of 2D transistors has yet to be determined. To this end, the fundamental merits and technological limits of 2D transistors need a critical assessment and objective projection. Here we review the promise and current status of 2D transistors, and emphasize that widely used device parameters (such as carrier mobility and contact resistance) could be frequently misestimated or misinterpreted, and may not be the most reliable performance metrics for benchmarking 2D transistors. We suggest that the saturation or on-state current density, especially in the short-channel limit, could provide a more reliable measure for assessing the potential of diverse 2D semiconductors, and should be applied for cross-checking different studies, especially when milestone performance metrics are claimed. We also summarize the key technical challenges in optimizing the channels, contacts, dielectrics and substrates and outline potential pathways to push the performance limit of 2D transistors. We conclude with an overview of the critical technical targets, the key technological obstacles to the 'lab-to-fab' transition and the potential opportunities arising from the use of these atomically thin semiconductors.

Atomic Wires of Transition Metal Chalcogenides: A Family of 1D Materials for Flexible Electronics and Spintronics

As analogues of two-dimensional (2D) layered materials, searching for one-dimensional (1D) van der Waals wired materials as 1D Lego blocks for integration and device applications has been pursued. Motivated by the recently synthesized atomic wires of molybdenum chalcogenide, here we explored the structures and stability of 66 atomic wires of 3d, 4d, and 5d transition metal chalcogenides in the M₆X₆ stoichiometry (M = transition metal, X = chalcogen). After high-throughput first-principles calculations, 53 unprecedented and experimentally feasible M₆X₆ wires have been identified. Diverse functionalities are found in these 1D materials, including semiconductors, metals, and ferromagnets with high Young's modulus and large fracture strain. Notably, six kinds of M₆X₆ wires are robust ferromagnets with Curie temperatures up to 700 K, which can be further elevated under axial strains. Moreover, these M₆X₆ atomic wires possess high stability and resistance to oxidation, humidity, and aggregation; both merits are desirable for device applications. This large family of 1D materials with definite structures and rich properties allows atomically precise integration for flexible electronics and spintronics.

Investigation of strain behavior and carrier mobility of organic-inorganic hybrid perovskites: (C4H9NH3)2GeI4 and (C4H9NH3)2SnI4

Two dimensional (2D) organic-inorganic hybrid perovskites have attracted great interest due to their tunable band gap and structural stability. In this study, biaxial strain behavior and carrier mobility of monolayers (C₄H₉NH₃)₂GeI₄ and (C₄H₉NH₃)₂SnI₄ are investigated by first principles calculations. (C₄H₉NH₃)₂GeI₄ and (C₄H₉NH₃)₂SnI₄ still retain their structural stability at ε = 13% and ε = 15%, respectively. Ab initio molecular dynamics (AIMD) simulation has confirmed that the system at 300 K is still thermodynamically stable at a biaxial strain of ε = 8%. The band gaps of (C₄H₉NH₃)₂GeI₄ and (C₄H₉NH₃)₂SnI₄ calculated from the HSE06 functional are increased from 2.427 and 1.953 eV at zero strain to 3.002 and 2.626 eV at ε = 8%. Deformation potential (DP) models based on longitudinal acoustic phonon (LAP) and optical phonon (OP) scattering are used to investigate mobility. The mobility of (C₄H₉NH₃)₂GeI₄ is lower than that of (C₄H₉NH₃)₂SnI₄. It is mainly determined by the scattering from OP with lower energy and decreases sharply with an increase in biaxial strain. Compared with Pb based perovskites, (C₄H₉NH₃)₂SnI₄ exhibits high carrier mobility and thermodynamic stability.

Addressable surface engineering for N-doped WS2 nanosheet arrays with abundant active sites and the optimal local electronic structure for enhanced hydrogen evolution reaction

The precise control over the geometric and electronic structures of active materials on flexible substrates is of great importance to address the current challenges in optimizing and developing high-performance flexible devices for energy conversion and storage. In this work, an addressable surface was demonstrated to engineer structurally controllable active nanomaterials for electrocatalytic hydrogen evolution. The nanostructures of WS2/MOF/metal hydroxide/oxide with different formation energy barriers electrodes could be tuned by modifying the ratio of O/C and the concentration of carbon defects at the surface of carbon cloth. The morphological structure of the vertical WS2 nanosheets that are favorable to electrocatalysis was found to be highly related to the addressable surface of carbon cloth though heterogeneous nucleation and the interactions between the monomers and surface functional groups. Moreover, the electronic structure of WS2 was further modified with N doping (N-WS2) to deliver an addressable surface for the reaction species involved in the electrocatalytic hydrogen evolution reaction (HER), and the resultant N-WS2 exhibited enhanced HER activity compared with the original WS2. The systematic experimental research and electronic-structure density functional theory (DFT) calculations demonstrated the interesting features of the N dopant: (i) the strong hybridization of the p orbital of dopant N with d orbital of W and p orbital of S atoms (W d-S p-N p hybridization) close to the Fermi level can disperse the conducting charges, thus leading to an improved conductivity across the basal plane of WS2 nanosheets; (ii) the local electron transfer from W to N atoms provides the local charge, thus promoting the H adsorption process in the HER for N-WS2. Our research can be expected to offer new perspectives in the precise construction of highly reactive nanostructures toward high-efficiency and highly stable flexible devices for energy conversion and storage.

Why Two-Dimensional Semiconductors Generally Have Low Electron Mobility

Atomically thin (two-dimensional, 2D) semiconductors have shown great potential as the fundamental building blocks for next-generation electronics. However, all the 2D semiconductors that have been experimentally made so far have room-temperature electron mobility lower than that of bulk silicon, which is not understood. Here, by using first-principles calculations and reformulating the transport equations to isolate and quantify contributions of different mobility-determining factors, we show that the universally low mobility of 2D semiconductors originates from the high "density of scatterings," which is intrinsic to the 2D material with a parabolic electron band. The density of scatterings characterizes the density of phonons that can interact with the electrons and can be fully determined from the electron and phonon band structures without knowledge of electron-phonon coupling strength. Our work reveals the underlying physics limiting the electron mobility of 2D semiconductors and offers a descriptor to quickly assess the mobility.

Electronic transport properties of hydrogenated and fluorinated graphene: a computational study

Hydrogenation and fluorination have been presented as two possible methods to open a bandgap in graphene, required for field-effect transistor applications. In this work, we present a detailed study of the phonon-limited mobility of electrons and holes in hydrogenated graphene (graphane) and fluorinated graphene (graphene fluoride). We pay special attention to the out-of-plane acoustic (ZA) phonons, responsible for the highest scattering rates in graphane and graphene fluoride. Considering the most adverse cut-off for long-wavelength ZA phonons, we have obtained electron (hole) mobilities of 28 (41) cm² V^-1 s^-1 for graphane and 96 (30) cm² V^-1 s^-1 for graphene fluoride. Nonetheless, for a more favorable cut-off wavelength of ∼2.6 nm, significantly higher electron (hole) mobilities of 233 (389) cm² V^-1 s^-1 for graphane and 460 (105) cm² V^-1 s^-1 for graphene fluoride are achieved. Moreover, while complete suppression of ZA phonons can increase the electron (hole) mobility in graphane up to 278 (391) cm² V^-1 s^-1, it does not affect the carrier mobilities in graphene fluoride. Velocity-field characteristics reveal that the electron velocity in graphane saturates at an electric field of ∼4 × 10⁵ V cm^-1. Comparing the mobilities with other two-dimensional (2D) semiconductors, we find that hydrogenation and fluorination are two promising avenues to realize a 2D semiconductor while providing good carrier mobilities.

New Polymorphs of 2D Indium Selenide with Enhanced Electronic Properties

The 2D semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility, and wide tunability of its band gap energy achieved by varying the layer thickness. All these features make 2D InSe a potential candidate for advanced electronic and optoelectronic applications. Here, the discovery of new polymorphs of InSe with enhanced electronic properties is reported. Using a global structure search that combines artificial swarm intelligence with first-principles energetic calculations, polymorphs that consist of a centrosymmetric monolayer belonging to the point group D 3d are identified, distinct from well-known polymorphs based on the D 3h monolayers that lack inversion symmetry. The new polymorphs are thermodynamically and kinetically stable, and exhibit a wider optical spectral response and larger electron mobilities compared to the known polymorphs. Opportunities to synthesize these newly discovered polymorphs and viable routes to identify them by X-ray diffraction, Raman spectroscopy, and second harmonic generation experiments are discussed.

Recent Advances in the Carrier Mobility of Two-Dimensional Materials: A Theoretical Perspective

Since the breakthrough of graphene, 2D materials have engrossed tremendous research attention due to their extraordinary properties and potential applications in electronic and optoelectronic devices. The high carrier mobility in the semiconducting material is critical to guarantee a high switching speed and low power dissipation in the corresponding device. Here, we review significant recent advances and important new developments in the carrier mobility of 2D materials based on theoretical investigations. We focus on some of the most widely studied 2D materials, their development, and future applications. Based on the current progress in this field, we conclude the review by providing challenges and an outlook in this field.

The electron-phonon scattering and carrier mobility in monolayer AsSb

Through first-principles calculations, the electron-phonon scattering of two-dimensional monolayer AsSb is investigated. The Boltzmann transport equation is used to compute the phonon limited carrier mobility. We find that the optical phonon scattering rates are much larger than acoustic ones around the valence band maximum (VBM) and the conduction band minimum (CBM). The phonon-decomposed scattering results show that transverse optical (TO) phonon modes dominate the scattering around VBM, while longitudinal and out-of-plane acoustic modes contribute mostly to the scattering at higher energy. TO phonon modes dominate the scattering for electrons over all energy level, and the electron-phonon matrix element analysis verified the results. Finally, we observed that the largest mean free paths for hot holes and hot electrons are 20 nm and 8 nm, respectively. That is the best range to extract the hot holes and hot electrons. More interestingly, owing to the in-pane net dipole moment of AsSb, the intrinsic electron/hole mobility of AsSb are 38/50 cm2 V-1 s-1, which are less than monolayer arsenene and antimonene.

Theoretical prediction of intrinsic electron mobility of monolayer InSe: first-principles calculation

Recently, a novel two-dimensional (2D) semiconductor, InSe, has attracted great attention due to its potential applications in optoelectronic devices and field effect transistors. In this study, phonon-limited mobility is investigated by the first-principles calculation. At 300 K, the intrinsic electron mobilities calculated from the electron-phonon coupling (EPC) matrix element are as high as [Formula: see text] (zigzag direction) and [Formula: see text] [Formula: see text] (Armchair direction), respectively. The deformation potential theory (DPT) based on longitudinal acoustic and optical phonon scattering is also employed to investigate electron mobility. The mobility from optical phonon scattering is much higher than that from longitudinal acoustic phonon scattering. If the polarization characteristics of InSe are not considered, the electron mobility calculated from EPC matrix element is closed to that from the longitudinal acoustic phonon DPT. In this study, we have also investigated the effect of polarization properties in 2D InSe on electron mobility. At 300 K, the electron mobility for including Fröhlich interaction is reduced to [Formula: see text] and [Formula: see text] [Formula: see text]. Therefore, the electron mobility for InSe is controlled by the scattering from polar phonons. The mobility can be increased to [Formula: see text] and [Formula: see text] [Formula: see text] under 4% biaxial strain. This result is compared with the experiment, and some disagreements are explained.

Two-Dimensional Ferroelastic Semiconductors in Nb2SiTe4 and Nb2GeTe4 with Promising Electronic Properties

Two-dimensional crystals with coupling of ferroelasticity and attractive electronic properties offer unprecedented opportunities for achieving long-sought controllable devices. However, to date, the reported proposals are mainly based on hypothetical structures. Here, using first-principles calculations, we identify single-layer Nb₂ATe₄ (A = Si, Ge), which can be exfoliated from its layered bulk, as a promising candidate. Single-layer Nb₂ATe₄ is found to be dynamically, thermally, and chemically stable. It possesses excellent ferroelasticity with high reversible ferroelastic strain and a moderate ferroelastic transition energy barrier, which are beneficial for practical applications. Meanwhile, it harbors outstanding anisotropic electronic properties, including anisotropic carrier mobility and optical properties. More importantly, the anisotropic properties of single-layer Nb₂ATe₄ can be efficiently controlled through ferroelastic switching. These appealing properties combined with the experimental feasibility render single-layer Nb₂ATe₄ an extraordinary platform for realizing controllable devices.

Superhigh out-of-plane piezoelectricity, low thermal conductivity and photocatalytic abilities in ultrathin 2D van der Waals heterostructures of boron monophosphide and gallium nitride

A stable 2D van der Waals (vdW) heterobilayer, constituted by boron monophosphide (BP) and Gallium Nitride (GaN) monolayers, has been explored for different kinds of energy conversion and nanoelectronics. The nearly matched lattice constants of GaN and BP are commensurate with each other in their lattice structures. The out-of-plane inversion asymmetry coupled with the large difference in atomic charges between the GaN and BP monolayers induces in the heterobilayer a giant out-of-plane piezoelectric coefficient (|d33|max ≈ 40 pm V-1), which is the highest ever reported in 2D materials of a finite thickness. It is much higher than the out-of-plane piezoelectric coefficient reported earlier in multilayered Janus transition metal dichalcogenide MXY (M = Mo, W; X, Y = S, Se, Te) (|d33|max = 10.57 pm V-1). Such a high out-of-plane piezoelectricity found in a BP/GaN heterobilayer can bring about gigantic strain-tunable top gating effects in nanopiezotronic devices based on the same. Moreover, electron mobility (∼104 cm2 V-1 s-1) is much higher than that of transition metal dichalcogenides and conventional semiconductors. The origin of low lattice thermal conductivity (κL ∼ 25.25 W m-1 K-1) in BP/GaN at room temperature, which is lower than that of black phosphorene (78 W m-1 K-1), buckled arsenene (61 W m-1 K-1), BCN (90 W m-1 K-1), MoS2 (34.5 W m-1 K-1) and WS2 (32 W m-1 K-1) monolayers, has been systematically investigated via phonon dispersion, lattice thermal conductivity, phonon lifetime and mode Grüneisen parameters. The valence band maximum (VBM) and conduction band minimum (CBM) arising from GaN and BP monolayers respectively result in a type II vdW heterobilayer, which is found to be thermodynamically favorable for photocatalytic water splitting in both acidic and neutral media. The exciton binding energies are comparable to those of MoS2 and C3N4 single layers, while the absorbance reaches as high as ∼105 cm-1 in the visible wavelength region. The emergence of high piezoelectricity, high carrier mobility, low lattice thermal conductivity and photocatalytic water splitting abilities in the proposed vdW heterobilayer signifies enormous potential for its versatile applications in nanoscale energy harvesting, e.g., nano-sensors in medical devices, future nanopiezotronics, 2D thermoelectrics and solar energy conversion.

Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures

We systematically investigate the effects of external electric field and interlayer coupling on the electronic structures and contact characteristics of hybrid graphene and tellurene (G/Te) van der Waals heterostructures (vdWHs) based on first-principles calculations. Our results show that the G/α-Te interface is formed by an n-type Schottky contact with a negligible Schottky barrier height (SBH), while the G/β-Te interface is formed by a p-type Schottky contact with a SBH of 0.51 eV. By applying external electric fields perpendicular to the G/Te interfaces or changing the interlayer distance between the graphene and tellurene monolayers, both Schottky barriers and contact types (n-type Schottky, p-type Schottky, and Ohmic) at the G/Te interfaces can be effectively modulated. The changes in charge transfer, as well as the corresponding interface dipole and potential step with the external electric field and interlayer coupling, are revealed to account for the reason for tunable Schottky and Ohmic contacts at the G/Te interfaces. Therefore, the G/Te vdWHs show tunable Schottky and Ohmic contacts with promising applications of graphene-based field-effect transistors in future experiments.

Accelerated Discovery of Two-Dimensional Optoelectronic Octahedral Oxyhalides via High-Throughput Ab Initio Calculations and Machine Learning

Traditional trial-and-error methods are obstacles for large-scale searching of new optoelectronic materials. Here, we introduce a method combining high-throughput ab initio calculations and machine-learning approaches to predict two-dimensional octahedral oxyhalides with improved optoelectronic properties. We develop an effective machine-learning model based on an expansive data set generated from density functional calculations including the geometric and electronic properties of 300 two-dimensional octahedral oxyhalides. Our model accelerates the screening of potential optoelectronic materials of 5000 two-dimensional octahedral oxyhalides. The distorted stacked octahedral factors proposed in our model play essential roles in the machine-learning prediction. Several potential two-dimensional optoelectronic octahedral oxyhalides with moderate band gaps, high electron mobilities, and ultrahigh absorbance coefficients are successfully hypothesized.