Controlled Growth of 3R Phase Tantalum Diselenide and Its Enhanced Superconductivity

Unraveling the role of Ta in the phase transition of Pb(Ta1+xSe2)2 using temperature-dependent Raman spectroscopy

Phase engineering strategies in two-dimensional transition metal dichalcogenides (2D-TMDs) have garnered significant attention due to their potential applications in electronics, optoelectronics, and energy storage. Various methods, including direct synthesis, pressure control, and chemical doping, have been employed to manipulate structural transitions in 2D-TMDs. Metal intercalation emerges as an effective technique to modulate phase transition dynamics by inserting external atoms or ions between the layers of 2D-TMDs, altering their electronic structure and physical properties. Here, we investigate the significant structural phase transitions in Pb(Ta1+xSe2)2 single crystals induced by Ta intercalation using a combination of Raman spectroscopy and first-principles calculations. The results highlight the pivotal role of Ta atoms in driving these transitions and elucidate the interplay between intercalation, phase transitions, and resulting electronic and vibrational properties in 2D-TMDs. By focusing on Pb(Ta1+xSe2)2 as an ideal case study and investigating like metal intercalation, this study advances understanding in the field and paves the way for the development of novel applications for 2D-TMDs, offering insights into the potential of these materials for future technological advancements.

Atomically Unveiling the Phase Evolution in Weakly Coupled Layered Transition-Metal Phosphorus Trichalcogenide by Chalcogen Doping

The stacking configuration significantly influences the properties of van der Waals (vdW) layered magnets by dictating crystallographic and magnetic symmetries. Transition-metal phosphorus trichalcogenides (MPX3, X = S, Se) intrinsically exhibit diverse stacking polytypes, being an optimal platform for magnetic phase engineering. Unlike MX2, where chalcogen doping has a minimal impact on stacking, MPX3 allows stacking control via elemental substitution. However, the atomic-scale mechanisms governing stacking variations remain unclear. Using scanning transmission electron microscopy (STEM) and density functional theory (DFT) calculations, we reveal that in 3d transition metal MPX3, tuning the S/Se ratio induces a transition from the C2/m to R3̅ phase due to modified interlayer S-S/Se-Se and P-P interactions. In contrast, stacking control becomes challenging for 4d CdPX3, due to relatively weak interlayer coupling. These insights provide a stacking basis for stacking polytypes in MPX3, paving the way for tuning magnetic couplings via stackingtronics.

Thickness Dependence in Phase Formation and Properties of TaSe2 Layers Grown on GaP(111)B

The effect of growth temperature and subsequent annealing on the epitaxy of both single- and few-layer TaSe2 on Se-terminated GaP(111)B substrates is investigated. The selective growth of the 1T and 1H phases is shown up to 1 ML according to X-ray and ultraviolet photoelectron spectroscopies. The 1H monolayer, favored at low temperatures, exhibits a very homogeneous coverage after annealing, while the 1T ML, grown at high temperatures, is characterized by a better in-plane orientation. Moreover, X-ray photoelectron diffraction spectroscopy performed on 1T submonolayers shows a negligible amount of mirror twins. By contrast, in multilayers, scanning transmission electron microscopy always reveals a mixture of 2Ha and 3R polytypes with very few 1T. In addition, the multilayers become Se-deficient above 500 °C, and a new interfacial phase identified as Ta1+xSe2 or TaP appears. Finally, the optimized multilayers grown between 250 and 500 °C exhibit a similar metallic behavior with a resistivity comparable to the bulk one with valuable outcomes in the formation of electrical contacts for two-dimensional (2D) material-based devices.

Two-Dimensional Tantalum Carbo-Selenide for Hydrogen Evolution

Herein, we report the synthesis of two-dimensional Ta2Se2C (2D-Ta2Se2C) nanosheets using electrochemical lithiation in multilayer Ta2Se2C followed by sonication in deionized water. Multilayer Ta2Se2C was obtained via solid-state synthesis of FexTa2Se2C followed by chemical etching of Fe. 2D-Ta2Se2C exhibited promising electrocatalytic activity for the hydrogen evolution reaction from water compared to multilayer Ta2Se2C and 2D-TaSe2. 2D-Ta2Se2C showed an overpotential at 10 mA·cm-2 (η10) of 264 mV, a Tafel slope of 91 mV·dec-1, and an electrochemically active surface area of 17.61 mECSA2·gcatalyst-1. The high performance could be attributed to the large surface area of single sheets which hence maximizes the number of exposed catalytic sites and increased density of vacancies, observed with transmission electron microscopy, during synthesis and processing.

Atomically engineering interlayer symmetry operations of two-dimensional crystals

Crystal symmetry, which governs the local atomic coordination and bonding environment, is one of the paramount constituents that intrinsically dictate materials' functionalities. However, engineering crystal symmetry is not straightforward due to the isotropically strong covalent/ionic bonds in crystals. Layered two-dimensional materials offer an ideal platform for crystal engineering because of the ease of interlayer symmetry operations. However, controlling the crystal symmetry remains challenging due to the ease of gliding perpendicular to the Z direction. Herein, we proposed a substrate-guided growth mechanism to atomically fabricate AB'-stacked SnSe2 superlattices, containing alternating SnSe2 slabs with periodic interlayer mirror and gliding symmetry operations, by chemical vapor deposition. Some higher-order phases such as 6 R, 12 R, and 18 C can be accessed, exhibiting modulated nonlinear optical responses suggested by first-principle calculations. Charge transfer from mica substrates stabilizes the high-order SnSe2 phases. Our approach shows a promising strategy for realizing topological phases via stackingtronics.

Controlled growth of 3R phase niobium diselenide and its properties

Inversion symmetry broken 3R phase transition metal dichalcogenides (TMDs) show fascinating prospects in spintronics, valleytronics, and nonlinear optics. However, the controlled synthesis of 3R phase TMDs is still a great challenge. In this work, two-dimensional 3R-NbSe2 single crystals up to 0.2 mm were synthesized for the first time through chemical vapor deposition method by designing a space-confined system. The crystal size and morphology can be controlled by the location of the stacked substrates and the amount of the Nb2O5 precursor. Scanning transmission electron microscopy and Raman measurements reveal the NbSe2 exhibits a pure 3R stacking mode with relatively weak interlayer van der Waals interactions. Importantly, 3R-NbSe2 shows obvious second harmonic generation signal which intensity intensified as thickness increases. Density functional theory calculations and optical absorption demonstrate the coexistence of metallic and semiconducting optical properties of 3R-NbSe2. We designed a NbSe2/WS2/NbSe2 photodetector utilizing the metallicity of 3R-NbSe2, which shows good performance especially an ultrafast response (6-7 μs, 0.5 ms - 7.9 s for Au electrodes in literature). The proposed strategy and findings are of great significance for the growth of many other 3R-TMDs and applications of nonlinear optical and ultrafast devices.

Superconducting Two-Dimensional FeSe Grown on the Fe-Enriched Interface

Two-dimensional (2D) tetragonal FeSe has sparked extensive research interest owing to its tunable superconductivity, providing valuable insights into the design of high-temperature superconductors. Currently, the intricate Fe-Se phase diagram poses a challenge to the controlled synthesis of superconducting 2D FeSe in a pure tetragonal phase. Here, we exploit the ion-exchange property of fluorophlogopite mica to devise a straightforward approach for the phase-controlled synthesis of tetragonal FeSe on an Fe-enriched mica surface within a molten salt environment. This method successfully produces highly crystalline FeSe in a pure tetragonal phase with adjustable thickness. We investigated the surface composition of the postgrowth mica substrate using various microscopic and spectroscopic characterizations to highlight the importance of the Fe-enriched growth interface in the phase-selective synthesis of 2D tetragonal FeSe. The obtained 2D FeSe exhibited 2D superconductivity, comparable to that of FeSe mechanically exfoliated from bulk crystals, confirming the high quality of our samples. Beyond tetragonal FeSe, 2D antiferromagnetic FeTe and superconducting FeSxSeyTe1-x-y have been phase-selectively synthesized via this approach. Our study elucidates the significance of the growth interface on the phase-selective synthesis of 2D materials and presents potential opportunities for the phase-controlled synthesis of 2D multiphase materials via the rational design of the growth interface.

Phase Engineering of Nanomaterials: Transition Metal Dichalcogenides

Crystal phase, a critical structural characteristic beyond the morphology, size, dimension, facet, etc., determines the physicochemical properties of nanomaterials. As a group of layered nanomaterials with polymorphs, transition metal dichalcogenides (TMDs) have attracted intensive research attention due to their phase-dependent properties. Therefore, great efforts have been devoted to the phase engineering of TMDs to synthesize TMDs with controlled phases, especially unconventional/metastable phases, for various applications in electronics, optoelectronics, catalysis, biomedicine, energy storage and conversion, and ferroelectrics. Considering the significant progress in the synthesis and applications of TMDs, we believe that a comprehensive review on the phase engineering of TMDs is critical to promote their fundamental studies and practical applications. This Review aims to provide a comprehensive introduction and discussion on the crystal structures, synthetic strategies, and phase-dependent properties and applications of TMDs. Finally, our perspectives on the challenges and opportunities in phase engineering of TMDs will also be discussed.

Atomically Unraveling Highly Crystalline Self-Intercalated Tantalum Sulfide with Correlated Stacking Registry-Dependent Magnetism

In self-intercalated two-dimensional (ic-2D) materials, understanding the local chemical environment and the topology of the filling site remains elusive, and the subsequent correlation with the macroscopically manifested physical properties has rarely been investigated. Herein, highly crystalline gram-scale ic-2D Ta1.33S2 crystals were successfully grown by the high-pressure high-temperature method. Employing combined atomic-resolution scanning transmission electron microscopy annular dark field imaging and density functional theory calculations, we systematically unveiled the atomic structures of an atlas of stacking registries in a well-defined √3(a) × √3(a) Ta1.33S2 superlattice. Ferromagnetic order was observed in the AC' stacking registry, and it evolves into an antiferromagnetic state in AA/AB/AB' stacking registries; the AA' stacking registry shows ferrimagnetic ordering. Therefore, we present a novel approach for fabricating large-scale highly crystalline ic-2D crystals and shed light on a powerful means of modulating the magnetic order of ic-2D systems via stacking engineering, i.e., stackingtronics.

Anisotropic Superconducting Nb2 CTx MXene Processed by Atomic Exchange at the Wafer Scale

Superconductivty has recently been induced in MXenes through surface modification. However, the previous reports have mostly been based on powders or cold-pressed pellets, with no known reports on the intrinsic superconsucting properties of MXenes at the nanoale. Here, it is developed a high-temperature atomic exchange process in NH3 atmosphere which induces superconductivity in either singleflakes or thin films of Nb2 CTx MXene. The exchange process between nitrogen atoms and fluorine, carbon, and oxygen atoms in the MXene lattice and related structural adjustments are studied using both experiments and density functional theory. Using either single-flake or thin-film devices, an anisotropic magnetic response of the 2D superconducting transformation has been successfully revealed. The anisotropic superconductivity is further demonstrated using superconducting thin films uniformly deposited over a 4 in. wafers, which opens up the possibility of scalable MXene-based superconducting devices.

Two-Dimensional Superconductivity in Air-Stable Single-Crystal Few-Layer Bi3O2S3

The progress of unconventional superconductors at the two-dimensional (2D) limit has inspired much interest. Recently, a new superconducting system was discovered in the semimetallic ternary Bi-O-S family. However, pure-phase crystals are difficult to synthesize because of the complicated stacking sequence of multiple charged layers and similar formation kinetics among ternary polytypes, leaving several fundamental issues regarding the structure-superconductivity correlation unresolved. Herein, 2D single-crystal ultrathin Bi3O2S3 nanosheets are prepared by using low-pressure chemical vapor deposition, and their atomic arrangement is clarified. Magnetotransport measurements indicate a superconducting transition at ∼6.1 K that is thickness-independent. The transport results demonstrate 2D superconducting characteristics, such as the Berezinskii-Kosterlitz-Thouless transition, and strong anisotropy with magnetic field orientations following the 2D Tinkham formula. The difference from superconductivity of powder is demonstrated from the perspective of their corresponding microstructures. These results corroborate the superconducting behavior of Bi3O2S3, providing fresh insights into the search for other bismuth oxychalcogenides and derivative BiS2-based analogues at the 2D limit.

Correlations in randomly stacked solids

Packing of spheres is a problem with a long history dating back to Kepler's conjecture in 1611. The highest density is realized in face-centered-cubic (FCC) and hexagonal-close-packed (HCP) arrangements. These are only limiting examples of an infinite family of maximal-density structures called Barlow stackings. They are constructed by stacking triangular layers, with each layer shifted with respect to the one below. At the other extreme, Torquato-Stillinger stackings are believed to yield the lowest possible density while preserving mechanical stability. They form an infinite family of structures composed of stacked honeycomb layers. In this article, we characterize layer-correlations in both families when the stacking is random. To do so, we take advantage of the Hägg code-a mapping between a Barlow stacking and a one-dimensional Ising magnet. The layer correlation is related to a moment-generating function of the Ising model. We first determine the layer correlation for random Barlow stacking, finding exponential decay. We next introduce a bias favoring one of two stacking chiralities-equivalent to a magnetic field in the Ising model. Although this bias favors FCC ordering, there is no long-ranged order as correlations still decay exponentially. Finally, we consider Torquato-Stillinger stackings, which map to a combination of an Ising magnet and a three-state Potts model. With random stacking, the correlations decay exponentially with a form that is similar to the Barlow problem. We discuss relevance to ordering in clusters of stacked solids and for layer-deposition-based synthesis methods.

Observation of Two-Dimensional Type-II Superconductivity in Bulk 3R-TaSe2 by Scanning Tunneling Spectroscopy

Here we report a low-temperature and vector-magnetic-field scanning tunneling microscopy/spectroscopy (STM/S) study on 3R-TaSe2. The sample surface was obtained by exfoliating a bulk 3R-TaSe2 single crystal in an ultrahigh-vacuum (UHV) chamber and then transferred in situ to STM. It was observed that the topmost layer shows a 3 × 3 charge density wave pattern at T = 4.2 K with metallic character in STS. The electronic characterization study by variable-temperature and magnetic field STS revealed that 3R-TaSe2 behaves as a type-II superconductor. More intriguingly, such superconductivity (SC) can survive under strong in-plane magnetic fields even up to 2.5 T and out-of-plane magnetic fields up to 0.7 T, exhibiting an anisotropic superconducting property. Temperature-dependent STS showed that 3R-TaSe2 undergoes a transition above 0.58 K. Our results may be important for understanding the intriguing SC properties of the 3R-phase van der Waals materials.

Recent advances in metallic transition metal dichalcogenides as electrocatalysts for hydrogen evolution reaction

Layered metallic transition metal dichalcogenides (MTMDs) exhibit distinctive electrical and catalytic properties to drive basal plane activity, and, therefore, they have emerged as promising alternative electrocatalysts for sustainable hydrogen evolution reactions (HERs). A key challenge for realizing MTMDs-based electrocatalysts is the controllable and scalable synthesis of high-quality MTMDs and the development of engineering strategies that allow tuning their electronic structures. However, the lack of a method for the direct synthesis of MTMDs retaining the structural stability limits optimizing the structural design for the next generation of robust electrocatalysts. In this review, we highlight recent advances in the synthesis of MTMDs comprising groups VB and VIB and various routes for structural engineering to enhance the HER catalytic performance. Furthermore, we provide insight into the potential future directions and the development of MTMDs with high durability as electrocatalysts to generate green hydrogen through water-splitting technology.

Emerging Phases of Layered Metal Chalcogenides

Layered metal chalcogenides, as a "rich" family of 2D materials, have attracted increasing research interest due to the abundant choices of materials with diverse structures and rich electronic characteristics. Although the common metal chalcogenide phases such as 2H and 1T have been intensively studied, many other unusual phases are rarely explored, and some of these show fascinating behaviors including superconductivity, ferroelectrics, ferromagnetism, etc. From this perspective, the unusual phases of metal chalcogenides and their characteristics, as well as potential applications are introduced. First, the unusual phases of metal chalcogenides from different classes, including transition metal dichalcogenides, magnetic element-based chalcogenides, and metal phosphorus chalcogenides, are discussed, respectively. Meanwhile, their excellent properties of different unusual phases are introduced. Then, the methods for producing the unusual phases are discussed, specifically, the stabilization strategies during the chemical vapor deposition process for the unusual phase growth are discussed, followed by an outlook and discussions on how to prepare the unusual phase metal dichalcogenides in terms of synthetic methodology and potential applications.

Commensurate Stacking Phase Transitions in an Intercalated Transition Metal Dichalcogenide

Intercalation and stacking-order modulation are two active ways in manipulating the interlayer interaction of transition metal dichalcogenides (TMDCs), which lead to a variety of emergent phases and allow for engineering material properties. Herein, the growth of Pb-intercalated TMDCs-Pb(Ta_1+x Se₂ )₂ , the first 124-phase, is reported. Pb(Ta_1+x Se₂ )₂ exhibits a unique two-step first-order structural phase transition at around 230 K. The transitions are solely associated with the stacking degree of freedom, evolving from a high-temperature (high-T) phase with ABC stacking and R3m symmetry to an intermediate phase with AB stacking and P3m1, and finally to a low-temperature (low-T) phase again with R3msymmetry, but with ACB stacking. Each step involves a rigid slide of building blocks by a vector [1/3, 2/3, 0]. Intriguingly, gigantic lattice contractions occur at the transitions on warming. At low-T, bulk superconductivity with T_c  ≈ 1.8 K is observed. The underlying physics of the structural phase transitions are discussed from first-principle calculations. The symmetry analysis reveals topological nodal lines in the band structure. The results demonstrate the possibility of realizing higher-order metal-intercalated phases of TMDCs and advance the knowledge of polymorphic transitions, and may inspire stacking-order engineering in TMDCs and beyond.

Influence of the choice of precursors on the synthesis of two-dimensional transition metal dichalcogenides

The interest in transition metal dichalcogenides (TMDCs; MEy/2; M = transition metal; E = chalcogenide, y = valence of the metal) has grown exponentially across various science and engineering disciplines due to their unique structural chemistry manifested in a two-dimensional lattice that results in extraordinary electronic and transport properties desired for applications in sensors, energy storage and optoelectronic devices. Since the properties of TMDCs can be tailored by changing the stacking sequence of 2D monolayers with similar or dis-similar materials, a number of synthetic routes essentially based on the disintegration of bulk (e.g., chemical exfoliation) or the integration of atomic constituents (e.g., vapor phase growth) have been explored. Despite a large body of data available on the chemical synthesis of TMDCs, experimental strategies with high repeatability of control over film thickness, phase and compositional purity remain elusive, which calls for innovative synthetic concepts offering, for instance, self-limited growth in the z-direction and homogeneous lateral topography. This review summarizes the recent conceptual advancements in the growth of layered van der Waals TMDCs from both mixtures of metal and chalcogen sources (multi-source precursors; MSPs) and from molecular compounds containing metals and chalcogens in one starting material (single-source precursor; SSPs). The critical evaluation of the strengths, limitations and opportunities of MSP and SSP approaches is provided as a guideline for the fabrication of TMDCs from commercial and customized molecular precursors. For example, alternative synthetic pathways using tailored molecular precursors circumvent the challenges of differential nucleation and crystal growth kinetics that are invariably associated with conventional gas phase chemical vapor transport (CVT) and chemical vapor deposition (CVD) of a mixture of components. The aspects of achieving high compositional purity and alternatives to minimize competing reactions or side products are discussed in the context of efficient chemical synthesis of TMDCs. Moreover, a critical analysis of the potential opportunities and existing bottlenecks in the synthesis of TMDCs and their intrinsic properties is provided.

Retainable Superconductivity and Structural Transition in 1T-TaSe2 Under High Pressure

As a prominent platform possessing the properties of superconductivity (SC) and charge density wave (CDW), transition-metal dichalcogenides (TMDCs) have attracted considerable attention for a long time. Moreover, extensive efforts have been devoted for exploring the SC and/or the interplay between SC and CDW in TMDCs in the past few decades. Here, we systematically investigate the electronic properties and structural evolution of 1T-TaSe₂ under pressure. With increasing pressure, pressure-induced superconductivity is observed at ∼2.6 GPa. The superconductive transition temperature (T_c) increases with the suppression of the CDW state to the maximum value of ∼5.1 K at 21.8 GPa and then decreases monotonously up to the highest pressure of 57.8 GPa. 1T-TaSe₂ transforms into a monoclinic C2/m structure above 19 GPa. The monoclinic phase coexists with the original phase as the pressure is released under ambient conditions and the retainable superconductivity with T_c = 2.9 K is observed in the released sample. We suggest that the retained superconductivity can be ascribed to the retention of the superconductive high-pressure monoclinic phase in the released sample. Our findings demonstrate that both the structure and CDW order are related to the superconductivity of TaSe₂.