Functionalization of indium tin oxide

Oxygen-Resistant Electrochemiluminescence System with Polyhedral Oligomeric Silsesquioxane

We report the oxygen-resistant electrochemiluminescence (ECL) system from the polyhedral oligomeric silsesquioxane (POSS)-modified tris(2,2'-bipyridyl)ruthenium(II) complex (Ru-POSS). In electrochemical measurements, including cyclic voltammetry (CV), it is shown that electric current and ECL intensity increase in the mixture system containing Ru-POSS and tripropylamine (TPrA) on the indium tin oxide (ITO) working electrode. The lower onset potential (E_onset) in CV is observed with Ru-POSS compared to tris(2,2'-bipyridyl)ruthenium(II) complex (Ru(bpy)₃²⁺). From the series of mechanistic studies, it was shown that adsorption of Ru-POSS onto the ITO electrode enhances TPrA oxidation and subsequently the efficiency of ECL with lower voltage. Moreover, oxygen quenching of ECL was suppressed, and it is proposed that the enhancement to the production of the TPrA radical could contribute to improving oxygen resistance. Finally, the ECL-based detection for water pollutant is demonstrated without the degassing treatment. The commodity system with Ru(bpy)₃²⁺ is not applicable in the absence of degassing with the sample solutions due to critical signal suppression, meanwhile the present system based on Ru-POSS was feasible for estimating the amount of the target even under aerobic conditions by fitting the ECL intensity to the standard curve. One of critical disadvantages of ECL can be solved by the hybrid formation with POSS.

Energy-Level Alignment of a Hole-Transport Organic Layer and ITO: Toward Applications for Organic Electronic Devices

2,2',6,6'-Tetraphenyl-4,4'-dipyranylidene (DIPO-Ph₄) was grown by vacuum deposition on an indium tin oxide (ITO) substrate. The films were characterized by atomic force microscopy as well as synchrotron radiation UV and X-ray photoelectron spectroscopy to gain an insight into the material growth and to better understand the electronic properties of the ITO/DIPO-Ph₄ interface. To interpret our spectroscopic data, we consider the formation of cationic DIPO-Ph₄ at the ITO interface owing to a charge transfer from the organic layer to the substrate. Ionization energy DFT calculations of the neutral and cationic species substantiate this hypothesis. Finally, we present the energetic diagram of the ITO/DIPO-Ph₄ system, and we discuss the application of this interface in various technologically relevant systems, as a hole-injector in OLEDs or as a hole-collector interfacial layer adjacent to the prototypical OPV layer P3HT:PCBM.

Investigation of simultaneously existed Raman scattering enhancement and inhibiting fluorescence using surface modified gold nanostars as SERS probes

One of the main challenges for highly sensitive surface-enhanced Raman scattering (SERS) detection is the noise interference of fluorescence signals arising from the analyte molecules. Here we used three types of gold nanostars (GNSs) SERS probes treated by different surface modification methods to reveal the simultaneously existed Raman scattering enhancement and inhibiting fluorescence behaviors during the SERS detection process. As the distance between the metal nanostructures and the analyte molecules can be well controlled by these three surface modification methods, we demonstrated that the fluorescence signals can be either quenched or enhanced during the detection. We found that fluorescence quenching will occur when analyte molecules are closely contacted to the surface of GNSs, leading to a ~100 fold enhancement of the SERS sensitivity. An optimized Raman signal detection limit, as low as the level of 10-11 M, were achieved when Rhodamine 6 G were used as the analyte. The presented fluorescence-free GNSs SERS substrates with plentiful hot spots and controllable surface plasmon resonance wavelengths, fabricated using a cost-effective self-assembling method, can be very competitive candidates for high-sensitive SERS applications.

Spontaneous Pt Deposition on Defective Surfaces of In2O3 Nanocrystals Confined within Cavities of Hollow Silica Nanoshells: Pt Catalyst-Modified ITO Electrode with Enhanced ECL Performance

Although the deposition of metallic domains on a preformed semiconductor nanocrystal provides an effective pathway to access diverse hybrid nanocrystals with synergistic metal/semiconductor heterojunction interface, those reactions that take place on the surface of semiconductor nanoscrystals have not been investigated thoroughly, because of the impediments caused by the surface-capping organic surfactants. By exploiting the interfacial reactions occurring between the solution and nanoparticles confined with the cavities of hollow nanoparticles, we propose a novel nanospace-confined strategy for assessing the innate reactivity of surfaces of inorganic semiconductor nanoparticles. This strategy was adopted to investigate the newly discovered process of spontaneous Pt deposition on In₂O₃ nanocrystals. Through an in-depth examination involving varying key reaction parameters, the Pt deposition process was identified to be templated by the defective In₂O₃ surface via a unique redox process involving the oxygen vacancies in the In₂O₃ lattice, whose density can be controlled by high-temperature annealing. The product of the Pt-deposition reaction inside the hollow silica nanoparticle, bearing In₂O₃-supported Pt catalysts inside the cavity protected by a porous silica shell, was proved to be an effective nanoreactor system which selectively and sustainably catalyzed the reduction reaction of small-sized aromatic nitro-compounds. Moreover, the surfactant-free and electroless Pt deposition protocol, which was devised based on the surface chemistry of the In₂O₃ nanoparticles, was successfully employed to fabricate Pt-catalyst-modified ITO electrodes with enhanced electrogenerated chemiluminescece (ECL) performance.

T4 bacteriophage conjugated magnetic particles for E. coli capturing: Influence of bacteriophage loading, temperature and tryptone

This work demonstrates the use of bacteriophage conjugated magnetic particles (Fe₃O₄) for the rapid capturing and isolation of Escherichia coli. The investigation of T4 bacteriophage adsorption to silane functionalised Fe₃O₄ with amine (NH₂), carboxylic (COOH) and methyl (CH₃) surface functional groups reveals the domination of net electrostatic and hydrophobic interactions in governing bacteriophage adsorption. The bare Fe₃O₄ and Fe₃O₄-NH₂ with high T4 loading captured 3-fold more E. coli (∼70% capturing efficiency) compared to the low loading T4 on Fe₃O₄-COOH, suggesting the significance of T4 loading in E. coli capturing efficiency. Importantly, it is further revealed that E. coli capture is highly dependent on the incubation temperature and the presence of tryptone in the media. Effective E. coli capturing only occurs at 37°C in tryptone-containing media with the absence of either conditions resulted in poor bacteria capture. The incubation temperature dictates the capturing ability of Fe₃O₄/T4, whereby T4 and E. coli need to establish an irreversible binding that occurred at 37°C. The presence of tryptophan-rich tryptone in the suspending media was also critical, as shown by a 3-fold increase in E. coli capture efficiency of Fe₃O₄/T4 in tryptone-containing media compared to that in tryptone-free media. This highlights for the first time that successful bacteria capturing requires not only an optimum tailoring of the particle's surface physicochemical properties for favourable bacteriophage loading, but also an in-depth understanding of how factors, such as temperature and solution chemistry influence the subsequent bacteriophage-bacteria interactions.

Efficient chemisorption of organophosphorous redox probes on indium tin oxide surfaces under mild conditions

We report a mild and straightforward one-step chemical surface functionalization of indium tin oxide (ITO) electrodes by redox-active molecules bearing an organophosphoryl anchoring group (i.e., alkyl phosphate or alkyl phosphonate group). The method takes advantage of simple passive adsorption in an aqueous solution at room temperature. We show that organophosphorus compounds can adsorb much more strongly and stably on an ITO surface than analogous redox-active molecules bearing a carboxylate or a boronate moiety. We provide evidence, through quantitative electrochemical characterization (i.e., by cyclic voltammetry) of the adsorbed organophosphoryl redox-active molecules, of the occurrence of three different adsorbate fractions on ITO, exhibiting different stabilities on the surface. Among these three fractions, one is observed to be strongly chemisorbed, exhibiting high stability and resistance to desorption/hydrolysis in a free-redox probe aqueous buffer. We attribute this remarkable stability to the formation of chemical bonds between the organophosphorus anchoring group and the metal oxide surface, likely occurring through a heterocondensation reaction in water. From XPS analysis, we also demonstrate that the surface coverage of the chemisorbed molecules is highly affected by the degree of surface hydroxylation, a parameter that can be tuned by simply preconditioning the freshly cleaned ITO surfaces in water. The lower the relative surface hydroxide density on ITO, the higher was the surface coverage of the chemisorbed species. This behavior is in line with a chemisorption mechanism involving coordination of a deprotonated phosphoryl oxygen atom to the non-hydroxylated acidic metal sites of ITO.

A novel surface modification scheme for ITO nanocrystals by acetylene: a combined experimental and DFT study

The chemisorption of C₂H₂ molecules on the ITO(100) surface results in ethylene-like configurations as studied by DFT and experiment.

Fabrication of highly transparent and conductive indium-tin oxide thin films with a high figure of merit via solution processing

Deposition technology of transparent conducting oxide (TCO) thin films is critical for high performance of optoelectronic devices. Solution-based fabrication methods can result in substantial cost reduction and enable broad applicability of the TCO thin films. Here we report a simple and highly effective solution process to fabricate indium-tin oxide (ITO) thin films with high uniformity, reproducibility, and scalability. The ITO films are highly transparent (90.2%) and conductive (ρ = 7.2 × 10(-4) Ω·cm) with the highest figure of merit (1.19 × 10(-2) Ω(-1)) among all the solution-processed ITO films reported to date. The high transparency and figure of merit, low sheet resistance (30 Ω/sq), and roughness (1.14 nm) are comparable with the benchmark properties of dc sputtering and can meet the requirements for most practical applications.

DNA nanoarchitectonics: assembled DNA at interfaces

DNA is a powerful biomaterial for creating rationally designed and functionally enhanced nanostructures. DNA nanoarchitectures positioned at substrate interfaces can offer unique advantages leading to improved surface properties relevant to biosensing, nanotechnology, materials science, and cell biology. This Perspective highlights the benefits and challenges of using assembled DNA as a nanoscale building block for interfacial layers and surveys their applications in three areas: homogeneous dense surface coatings, bottom-up nanopatterning, and 3D nanoparticle lattices. Possible future research developments are discussed at the end of the Perspective.

Molecularly functionalized silicon substrates for orientation control of the microphase separation of PS-b-PMMA and PS-b-PDMS block copolymer systems

The use of block copolymer (BCP) thin films to generate nanostructured surfaces for device and other applications requires precise control of interfacial energies to achieve the desired domain orientation. Usually, the surface chemistry is engineered through the use of homo- or random copolymer brushes grown or attached to the surface. Herein, we demonstrate a facile, rapid, and tunable approach to surface functionalization using a molecular approach based on ethylene glycol attachment to the surface. The effectiveness of the molecular approach is demonstrated for the microphase separation of PS-b-PMMA and PS-b-PDMS BCPs in thin films and the development of nanoscale features at the substrate.

Importance of the indium tin oxide substrate on the quality of self-assembled monolayers formed from organophosphonic acids

The role of indium tin oxide (ITO) surface structure and chemistry on the formation of self-assembled monolayers (SAM) derived from organophosphonic acids has been investigated. The surface hydroxide content, crystal structure, and roughness of unmodified ITO surfaces were analyzed with X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM), and contact angle measurements. Organophosphonic acid monolayer modified ITO surfaces were then characterized using electrochemistry, contact angle measurements and impedance spectroscopy. To ascertain the extent of defects, Pb was underpotentially deposited (UPD) onto the monolayer modified ITO surfaces at defect sites and regions where the monolayer was weakly bound. The extent of defects, and the location of defects, in monolayers formed on different ITO surfaces were determined from the amount of charge passed during UPD of Pb at identical conditions, followed by XPS analysis of the Pb 4f peak and imaging with scanning tunnelling microscopy (STM). The results demonstrate that the crystal structure and hydroxide ion concentration of ITO surfaces significantly influence the quality of self-assembled monolayer formation as does the surface roughness. The most well-packed stable monolayers formed only on smooth amorphous ITO substrates with homogeneous grains and high hydroxide content. Lower quality SAMs with significant defects formed on polycrystalline surfaces and the higher the roughness the more the defects. STM defect mapping revealed that the location of defects in monolayers occurred at the boundaries between grain edges on the polycrystalline surfaces. This shows that the substrate characteristics have a strong influence on the quality of monolayers formed on ITO surfaces.

Sample cells for probing solid/liquid interfaces with broadband sum-frequency-generation spectroscopy

Two sample cells designed specifically for sum-frequency-generation (SFG) measurements at the solid/liquid interface were developed: one thin-layer analysis cell allowing measurement of films on reflective metallic surfaces through a micrometer layer of solution and one spectroelectrochemical cell allowing investigation of processes at the indium tin oxide/solution interface. Both sample cells are described in detail and data illustrating the capabilities of each are shown. To further improve measurements at solid/liquid interfaces, the broadband SFG system was modified to include a reference beam which can be measured simultaneously with the sample signal, permitting background correction of SFG spectra in real time. Sensitivity tests of this system yielded a signal-to-noise ratio of 100 at a surface coverage of 0.2 molecules/nm(2). Details on data analysis routines, pulse shaping methods of the visible beam, as well as the design of a purging chamber and sample stage setup are presented. These descriptions will be useful to those planning to set up a SFG spectrometer or seeking to optimize their own SFG systems for measurements of solid/liquid interfaces.

Surface composition and electrical and electrochemical properties of freshly deposited and acid-etched indium tin oxide electrodes

We compare the near-surface composition and electroactivity of commercial indium tin oxide (ITO) thin films, activated by plasma cleaning or etching with strong haloacids, with ITO films that have been freshly deposited in high vacuum, before and after exposure to the atmosphere or water vapor. Conductive-tip AFM, X-ray photoelectron spectroscopy (XPS), and the electrochemistry of probe molecules in solution were used to compare the relative degrees of electroactivity and the near-surface composition of these materials. Brief etching of commercial ITO samples with concentrated HCl or HI significantly enhances the electrical activity of these oxides as revealed by C-AFM. XPS was used to compare the composition of these activated surfaces, focusing on the intrinsically asymmetric O 1s line shape. Energy-loss processes associated with photoemission from the tin-doped, oxygen-deficient oxides complicate the interpretation of the O 1s spectra. O 1s spectra from the stoichiometric indium oxide lattice are accompanied by higher-binding-energy peaks associated with hydroxylated forms of the oxide (and in some cases carbonaceous impurities) and overlapping photoemission associated with energy-loss processes. Characterization of freshly sputter-deposited indium oxide (IO) and ITO films, transferred under high vacuum to the surface analysis environment, allowed us to differentiate the contributions of tin doping and oxygen-vacancy doping to the O 1s line shape, relative to higher-binding-energy O 1s components associated with hydroxyl species and carbonaceous impurities. Using these approaches, we determined that acid activation and O2 plasma etching create an ITO surface that is still covered with an average of one to two monolayers of hydroxide. Both of these activation treatments lead to significantly higher rates of electron transfer to solution probe molecules, such as dimethyferrocene in acetonitrile. Solution electron-transfer events appear to occur at no more than 4x10(7) electroactive sites per cm2 (each with diameters of ca. 50-200 nm) (i.e., a small fraction of the geometric area of the electrode). Electron-transfer rates correlate with the near-surface tin dopant concentration, suggesting that these electroactive sites arise from near-surface tin enrichment.