Germanium oxide removal by citric acid and thiol passivation from citric acid-terminated Ge(100)

Self-Assembly of Au-Fe3O4 Hybrid Nanoparticles Using a Sol-Gel Pechini Method

The Pechini method has been used as a synthetic route for obtaining self-assembling magnetic and plasmonic nanoparticles in hybrid silica nanostructures. This manuscript evaluates the influence of shaking conditions, reaction time, and pH on the size and morphology of the nanostructures produced. The characterization of the nanomaterials was carried out by transmission electron microscopy (TEM) to evaluate the coating and size of the nanomaterials, Fourier-transform infrared spectroscopy (FT-IR) transmission spectra to evaluate the presence of the different coatings, and thermogravimetric analysis (TGA) curves to determine the amount of coating. The results obtained show that the best conditions to obtain core–satellite nanostructures with homogeneous silica shells and controlled sizes (<200 nm) include the use of slightly alkaline media, the ultrasound activation of silica condensation, and reaction times of around 2 h. These findings represent an important framework to establish a new general approach for the click chemistry assembling of inorganic nanostructures.

n-type Ge/Si antennas for THz sensing

Ge-on-Si plasmonics holds the promise for compact and low-cost solutions in the manipulation of THz radiation. We discuss here the plasmonic properties of doped Ge bow-tie antennas made with a low-point cost CMOS mainstream technology. These antennas display resonances between 500 and 700 GHz, probed by THz time domain spectroscopy. We show surface functionalization of the antennas with a thin layer of α-lipoic acid that red-shifts the antenna resonances by about 20 GHz. Moreover, we show that antennas protected with a silicon nitride cap layer exhibit a comparable red-shift when covered with the biolayer. This suggests that the electromagnetic fields at the hotspot extend well beyond the cap layer, enabling the possibility to use the antennas with an improved protection of the plasmonic material in conjunction with microfluidics.

Ready-to-Use Germanium Surfaces for the Development of FTIR-Based Biosensors for Proteins

Germanium is particularly suitable for the design of FTIR-based biosensors for proteins. The grafting of stable and thin organic layers on germanium surfaces remains, however, challenging. To tackle this problem, we developed a calix[4]arene-tetradiazonium salt decorated with four oligo(ethylene glycol) chains and a terminal reactive carboxyl group. This versatile molecular platform was covalently grafted on germanium surfaces to yield robust ready-to-use surfaces for biosensing applications. The grafted calixarene monolayer prevents nonspecific adsorption of proteins while allowing bioconjugation with biomolecules such as bovine serum albumin (BSA) or biotin. It is shown that the native form of the investigated proteins was maintained upon immobilization. As a proof of concept, the resulting calix[4]arene-based germanium biosensors were used through a combination of ATR-FTIR spectroscopy and fluorescence microscopy for the selective detection of streptavidin from a complex medium. This study opens real possibilities for the development of sensitive and selective FTIR-based biosensors devoted to the detection of proteins.

Vapor-Phase Passivation of Chlorine-Terminated Ge(100) Using Self-Assembled Monolayers of Hexanethiol

Continued scaling of electronic devices shows the need to incorporate high mobility alternatives to silicon, the cornerstone of the semiconductor industry, into modern field effect transistor (FET) devices. Germanium is well-poised to serve as the channel material in FET devices as it boasts an electron and hole mobility more than twice and four times that of Si, respectively. However, its unstable native oxide makes its passivation a crucial step toward its potential integration into future FETs. The International Roadmap for Devices and Systems (IRDS) predicts continued aggressive scaling not only of the device size but also of the pitch in nanowire arrays. The development of a vapor-phase chemical passivation technique will be required to prevent the collapse of these structures that can occur because of the surface tension and capillary forces that are experienced when tight-pitched nanowire arrays are processed via liquid-phase chemistry. Reported here is a vapor-phase process using hexanethiol for the passivation of planar Ge(100) substrates. Results benchmarking it against its well-established liquid-phase equivalent are also presented. X-ray photoelectron spectroscopy was used to monitor the effectiveness of the developed vapor-phase protocol, where the presence of oxide was monitored at 0, 24, and 168 h. Water contact angle measurements compliment these results by demonstrating an increase in hydrophobicity of the passivated substrates. Atomic force microscopy monitored the surface topology before and after processing to ensure the process does not cause roughening of the surface, which is critical to demonstrate suitability for nanostructures. It is shown that the 200 min vapor-phase passivation procedure generates stable, passivated surfaces with less roughness than the liquid-phase counterpart.

Role of Surface Capping Molecule Polarity on the Optical Properties of Solution Synthesized Germanium Nanocrystals

The role surface capping molecules play in dictating the optical properties of semiconductor nanocrystals (NCs) is becoming increasingly evident. In this paper the role of surface capping molecule polarity on the optical properties of germanium NCs (Ge NCs) is explored. Capping molecules are split into two groups: nonpolar and polar. The NCs are fully characterized structurally and optically to establish the link between observed optical properties and surface capping molecules. Ge NC optical properties altered by surface capping molecule polarity include emission maximum, emission lifetime, quantum yield, and Stokes shift. For Ge NCs, this work also allows rational tuning of their optical properties through changes to surface capping molecule polarity, leading to improvements in emerging Ge based bioimaging and optoelectronic devices.

Shallow Heavily Doped n++ Germanium by Organo-Antimony Monolayer Doping

Functionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the development of solid-state devices. In this study, we report the shallow doping of Ge wafers with a monolayer doping strategy that is based on the controlled grafting of Sb precursors and the subsequent diffusion of Sb into the wafer upon annealing. We also highlight the key role of citric acid in passivating the surface before its reaction with the Sb precursors and the benefit of a protective SiO₂ overlayer that enables an efficient incorporation of Sb dopants with a concentration higher than 10²⁰ cm^-3. Microscopic four-point probe measurements and photoconductivity experiments show the full electrical activation of the Sb dopants, giving rise to the formation of an n++ Sb-doped layer and an enhanced local field-effect passivation at the surface of the Ge wafer.

Passivation of Germanium by Graphene

The oxidation of Ge covered with graphene that is either grown on or transferred to the surface is investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy. Graphene properly grown by chemical vapor deposition on Ge(100), (111), or (110) effectively inhibits room-temperature oxidation of the surface. When graphene is transferred to the Ge surface, oxidation is reduced relative to that on uncovered Ge but has the same power law dependence. We conclude that access to the graphene/Ge interface must occur via defects in the graphene. The excellent passivation provided by graphene grown on Ge should enhance applications of Ge in the electronic-device industry.

Structural evolution of reduced GeOx nanoparticles

GeO_x nanoparticles (NPs) are of growing interest in lithium storage and optoelectronics. GeO_x NPs prepared by chemical reduction, exposed to air or retained under N₂, then annealed under H₂ at various temperatures are studied herein using soft X-ray spectroscopy. We find that fresh and air-exposed GeO_x NPs evolve rather differently under annealing. The fresh GeO_x NPs start as a very amorphous heterogeneous mixture of GeO_x and Ge, and during annealing both the valence band and conduction band edges evolve. In contrast, the air-exposed GeO_x NPs initially contain quartz-phase GeO₂, and during annealing only the conduction band edge evolves due to increased oxygen vacancies forming unoccupied defect states (the valence band does not change until annealing at high temperture, at which point almost all of the GeO₂ is removed). These findings suggest a preparation and annealing strategy that could be used to tailor GeO_x NPs for their intended use in lithium storage or optoelectronic applications.

All-Inorganic Germanium Nanocrystal Films by Cationic Ligand Exchange

We introduce a new paradigm for group IV nanocrystal surface chemistry based on room temperature surface activation that enables ionic ligand exchange. Germanium nanocrystals synthesized in a gas-phase plasma reactor are functionalized with labile, cationic alkylammonium ligands rather than with traditional covalently bound groups. We employ Fourier transform infrared and (1)H nuclear magnetic resonance spectroscopies to demonstrate the alkylammonium ligands are freely exchanged on the germanium nanocrystal surface with a variety of cationic ligands, including short inorganic ligands such as ammonium and alkali metal cations. This ionic ligand exchange chemistry is used to demonstrate enhanced transport in germanium nanocrystal films following ligand exchange as well as the first photovoltaic device based on an all-inorganic germanium nanocrystal absorber layer cast from solution. This new ligand chemistry should accelerate progress in utilizing germanium and other group IV nanocrystals for optoelectronic applications.