Reference-free x-ray fluorescence analysis with a micrometer-sized incident beam

Spatially resolved x-ray fluorescence (XRF) based analysis employing incident beam sizes in the low micrometer range (μXRF) is widely used to study lateral composition changes of various types of microstructured samples. However, up to now the quantitative analysis of such experimental datasets could only be realized employing adequate calibration or reference specimen. In this work, we extent the applicability of the so-called reference-free XRF approach to enable reference-freeμXRF analysis. Here, no calibration specimen are needed in order to derive a quantitative and position sensitive composition of the sample of interest. The necessary instrumental steps to realize reference-freeμXRF are explained and a validation of ref.-freeμXRF against ref.-free standard XRF is performed employing laterally homogeneous samples. Finally, an application example from semiconductor research is shown, where the lateral sample features require the usage of ref.-freeμXRF for quantitative analysis.

Inhomogeneous spatial distribution of non radiative recombination centers in GaN/InGaN nanowire heterostructures studied by cathodoluminescence

In order to elucidate the mechanisms responsible for cathodoluminescence intensity variations at the scale of single InGaN/GaN nanowire heterostructures, a methodology is proposed based on a statistical analysis on ensembles of several hundreds of nanowires exhibiting a diameter of 180, 240 and 280 nm. For 180 nm diameter, we find that intensitiy variations are consistent with incorporation of point defects obeying Poisson's statistics. For wider diameters, intensity variations at the scale of single NWs are observed and assigned to local growth conditions fluctuations. Finally, for the less luminescent nanowires, a departure from Poisson's statistics is observed suggesting the possible clustering of non independent point defects.

The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures

By collecting simultaneously optical and chemical/morphological data from nanoscale volumes, the Photonic Atom Probe (PAP) can be applied not only to the study of the relationship between optical and structural properties of quantum emitter but also to evaluate the influence of other factors, such as the presence of point defects, on the photoluminescence. Through the analysis of multiple layers of InGaN/GaN quantum dots (QDs), grown so that the density of structural defects is higher with increasing distance from the substrate, we establish that the light emission is higher in the regions exhibiting a higher presence of structural defects. While the presence of intrinsic point defects with non-radiative recombination properties remains elusive, our result is consistent with the fact that QD layers closer to the substrate behave as traps for non-radiative point defects. This result demonstrates the potential of the PAP as a technique for the study of the optical properties of defects in semiconductors.

Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam epitaxy on a heavily Mg-doped p-type GaN thin layer, grown by metalorganic vapor phase epitaxy. A correlation of atom probe tomography, electron holography and secondary ion mass spectrometry has been performed in order to investigate the nm-scale distribution of both Mg and Ge at the TJ. Experimental results reveal that Mg segregates at the TJ interface, and diffuses into the Ge-doped layer. As a result, the dopant concentration and distribution differ significantly from the nominal values. Despite this, electron holography reveals a TJ depletion width of ∼7 nm, in agreement with band diagram simulations using the experimentally determined dopant distribution.

Polarized cathodoluminescence for strain measurement

Strain can alter the properties of semiconductor materials. The selection of a strain measurement technique is a trade-off between sensitivity, resolution, and field of view, among other factors. We introduce a new technique based on the degree of polarization of cathodoluminescence (CL), which has excellent sensitivity (10^-5), an intermediate resolution (about 100 nm), and an adjustable field of view. The strain information provided is complementary to that obtained by CL spectroscopy. Feasibility studies are presented. The experimental setup and the data treatment procedure are described in detail. Current limitations are highlighted. The technique is tested on the cross section of bulk indium phosphide samples strained by a patterned hard mask.

Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces

We investigated deformation of InP that was introduced by thin, narrow, dielectric SiN_x stripes on the (100) surface of InP substrates. Quantitative optical measurements were performed using two different techniques based on luminescence from the InP: first, by degree of polarization of photoluminescence; and second, by cathodoluminescence spectroscopy. The two techniques provide complementary information on deformation of the InP and thus together provide a means to evaluate approaches to simulation of the deformation owing to dielectric stripes. Ultimately, these deformations can be used to estimate changes in refractive index and gain that are a result of the stripes.

Shallow Heavily Doped n++ Germanium by Organo-Antimony Monolayer Doping

Functionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the development of solid-state devices. In this study, we report the shallow doping of Ge wafers with a monolayer doping strategy that is based on the controlled grafting of Sb precursors and the subsequent diffusion of Sb into the wafer upon annealing. We also highlight the key role of citric acid in passivating the surface before its reaction with the Sb precursors and the benefit of a protective SiO₂ overlayer that enables an efficient incorporation of Sb dopants with a concentration higher than 10²⁰ cm^-3. Microscopic four-point probe measurements and photoconductivity experiments show the full electrical activation of the Sb dopants, giving rise to the formation of an n++ Sb-doped layer and an enhanced local field-effect passivation at the surface of the Ge wafer.

Cathodoluminescence spectroscopy of plasmonic patch antennas: towards lower order and higher energies

We report on the cathodoluminescence characterization of Au, Al and a Au/Al bimetal circular plasmonic patch antennas, with disk diameter ranging from 150 to 900 nm. It allows us access to monomode operation of the antennas down to the fundamental dipolar mode, in contrast to previous studies on similar systems. Moreover we show that we can shift the operation range of the antennas towards the blue spectral range by using Al. Our experimental results are compared to a semi-analytical model that provides qualitative insight on the mode structure sustained by the antennas.

Evidence of light depolarization in grazing incidence germanium attenuated total reflection prisms

Attenuated total reflection (ATR) infrared absorption spectroscopy is a well-known vibrational spectroscopy technique for many different applications. In recent years this technique has been used to detect thin layer(s) lying on a solid substrate. Such a sample needs high pressure to ensure good optical contact between sample and prism and a p-polarization to enhance the signal to be detected. Such conditions have not been detailed in the literature regarding the effect of high pressure on the ATR measurement. This study shows the detrimental effect of high pressure on the ATR spectra. This effect is related to light depolarization induced by the germanium prism under high pressure. Moreover, the importance of polarizer position in the optical bench is highlighted. Indeed, due to the pressure-induced depolarization of the prism, the polarizer has to be placed before the prism to limit undesirable effects on the ATR spectrum baseline.

High rejection bandpass optical filters based on sub-wavelength metal patch arrays

We report the study of a resonant bandpass filter made of a very thin subwavelength metal patch array coupled to a high index dielectric waveguide. The spectral properties of those filters can easily be tuned by playing on the lateral dimensions of the grating. They exhibit high and narrow transmission peaks together with very good rejection of light out of the pass-band and low angular dependance. An experimental demonstration using standard large scale silicon microelectronics processes is presented in the mid infrared spectral range. This concept of filters can easily be scaled throughout the optical spectrum, and can be integrated within focal plane arrays of various imaging technologies, down to visible wavelengths.

X-ray pushing of a mechanical microswing

We report here for the first time the combination of x-ray synchrotron light and a micro-electro-mechanical system (MEMS). We show how it is possible to modulate in real time a MEMS mass distribution to induce a nanometric and tunable mechanical oscillation. The quantitative experimental demonstration we present here uses periodic thermal dilatation of a Ge microcrystal attached to a Si microlever, induced by controlled absorption of an intensity modulated x-ray microbeam. The mechanism proposed can be envisaged either for the detection of small heat flux or for the actuation of a mechanical system.

Antiarrhythmic use of cibenzoline, a new class 1 antiarrhythmic agent with class 3 and 4 properties, in patients with recurrent ventricular tachycardia

Cibenzoline is a new antiarrhythmic agent with class 1 properties, and additional class 3 and 4 effects. We treated 28 patients with drug-refractory and recurrent ventricular tachycardia with up to 700 mg/day cibenzoline for periods up to 5.5 months. Cibenzoline prevented the recurrence of ventricular tachycardia in five patients (18%). In three patients (11%) the arrhythmia may have been worsened, in 23 patients (82%) cibenzoline was ineffective. Cibenzoline increased the PR interval by 18% and the QRS duration by 33%; the effect on the QT was variable and the corrected QT interval did not change significantly. Side-effects were observed in 21% of patients. We conclude that cibenzoline does not appear to be superior to conventional class 1 antiarrhythmic agents and that it cannot be recommended for general use in patients with ventricular tachycardia. Additional pharmacokinetic and electrophysiologic studies are required before cibenzoline is used in outpatients with severe ventricular arrhythmias.