Formation of alkanethiolate self-assembled monolayers at halide-terminated Ge surfaces

Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures

We combine density functional theory and many body perturbation theory to investigate the electronic properties of Si(100) and Ge(100) surfaces terminated with halogen atoms (-I, -Br, -Cl, -F) and other chemical functionalizations (-H, -OH, -CH3) addressing the absolute values of their work function, electronic affinity and ionization potential. Our results point out that electronic properties of functionalized surfaces strongly depend on the chemisorbed species and much less on the surface crystal orientation. The presence of halogens at the surface always leads to an increment of the work function, ionization potential and electronic affinity with respect to fully hydrogenated surfaces. On the contrary, the presence of polar -OH and -CH3 groups at the surface leads to a reduction of the aforementioned quantities with respect to the H-terminated system. Starting from the work functions calculated for the Si and Ge passivated surfaces, we apply a simple model to estimate the properties of functionalized SiGe surfaces. The possibility of modulating the work function by changing the chemisorbed species and composition is predicted. The effects induced by different terminations on the band energy line-up profile of SiGe surfaces are then analyzed. Interestingly, our calculations predict a type-II band offset for the H-terminated systems and a type-I band offset for the other cases.

Vapor-Phase Passivation of Chlorine-Terminated Ge(100) Using Self-Assembled Monolayers of Hexanethiol

Continued scaling of electronic devices shows the need to incorporate high mobility alternatives to silicon, the cornerstone of the semiconductor industry, into modern field effect transistor (FET) devices. Germanium is well-poised to serve as the channel material in FET devices as it boasts an electron and hole mobility more than twice and four times that of Si, respectively. However, its unstable native oxide makes its passivation a crucial step toward its potential integration into future FETs. The International Roadmap for Devices and Systems (IRDS) predicts continued aggressive scaling not only of the device size but also of the pitch in nanowire arrays. The development of a vapor-phase chemical passivation technique will be required to prevent the collapse of these structures that can occur because of the surface tension and capillary forces that are experienced when tight-pitched nanowire arrays are processed via liquid-phase chemistry. Reported here is a vapor-phase process using hexanethiol for the passivation of planar Ge(100) substrates. Results benchmarking it against its well-established liquid-phase equivalent are also presented. X-ray photoelectron spectroscopy was used to monitor the effectiveness of the developed vapor-phase protocol, where the presence of oxide was monitored at 0, 24, and 168 h. Water contact angle measurements compliment these results by demonstrating an increase in hydrophobicity of the passivated substrates. Atomic force microscopy monitored the surface topology before and after processing to ensure the process does not cause roughening of the surface, which is critical to demonstrate suitability for nanostructures. It is shown that the 200 min vapor-phase passivation procedure generates stable, passivated surfaces with less roughness than the liquid-phase counterpart.

Chemical Lift-Off Lithography of Metal and Semiconductor Surfaces

Chemical lift-off lithography (CLL) is a subtractive soft-lithographic technique that uses polydimethylsiloxane (PDMS) stamps to pattern self-assembled monolayers of functional molecules for applications ranging from biomolecule patterning to transistor fabrication. A hallmark of CLL is preferential cleavage of Au-Au bonds, as opposed to bonds connecting the molecular layer to the substrate, i.e., Au-S bonds. Herein, we show that CLL can be used more broadly as a technique to pattern a variety of substrates composed of coinage metals (Pt, Pd, Ag, Cu), transition and reactive metals (Ni, Ti, Al), and a semiconductor (Ge) using straightforward alkanethiolate self-assembly chemistry. We demonstrate high-fidelity patterning in terms of precise features over large areas on all surfaces investigated. We use patterned monolayers as chemical resists for wet etching to generate metal microstructures. Substrate atoms, along with alkanethiolates, were removed as a result of lift-off, as previously observed for Au. We demonstrate the formation of PDMS-stamp-supported bimetallic monolayers by performing CLL on two different metal surfaces using the same PDMS stamp. By expanding the scope of the surfaces compatible with CLL, we advance and generalize CLL as a method to pattern a wide range of substrates, as well as to produce supported metal monolayers, both with broad applications in surface and materials science.

Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers

Bismuth has been identified as a material of interest for electronic applications due to its extremely high electron mobility and quantum confinement effects observed at nanoscale dimensions. However, it is also the case that Bi nanostructures are readily oxidised in ambient air, necessitating additional capping steps to prevent surface re-oxidation, thus limiting the processing potential of this material. This article describes an oxide removal and surface stabilization method performed on molecular beam epitaxy (MBE) grown bismuth thin-films using ambient air wet-chemistry. Alkanethiol molecules were used to dissolve the readily formed bismuth oxides through a catalytic reaction; the bare surface was then reacted with the free thiols to form an organic layer which showed resistance to complete reoxidation for up to 10 days.

Covalent functionalization of two-dimensional group 14 graphane analogues

The sp³-hybridized group 14 graphane analogues are a unique family of 2D materials in which every atom requires a terminal ligand for stability.

Work Function Control of Germanium through Carborane-Carboxylic Acid Surface Passivation

Self-assembled monolayers (SAMs) of carborane isomers with different dipole moments passivate germanium to modulate surface work function while maintaining chemical environment and surface energy. To identify head groups capable of monolayer formation on germanium surfaces, we studied thiol-, hydroxyl-, and carboxyl-terminated carboranes. These films were successfully formed with carboxylic acid head groups instead of the archetypal thiol, suggesting that the carborane cluster significantly affects headgroup reactivity. Film characterization included X-ray and ultraviolet photoelectron spectroscopies as well as contact angle goniometry. Using these carboranes, the germanium surface work function was tailored over 0.4 eV without significant changes to wetting properties.

Passivation of Germanium by Graphene

The oxidation of Ge covered with graphene that is either grown on or transferred to the surface is investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy. Graphene properly grown by chemical vapor deposition on Ge(100), (111), or (110) effectively inhibits room-temperature oxidation of the surface. When graphene is transferred to the Ge surface, oxidation is reduced relative to that on uncovered Ge but has the same power law dependence. We conclude that access to the graphene/Ge interface must occur via defects in the graphene. The excellent passivation provided by graphene grown on Ge should enhance applications of Ge in the electronic-device industry.

Investigation of Controllable Nanoscale Heat-Denatured Bovine Serum Albumin Films on Graphene

Two-dimensional graphene devices are widely used for biomolecule detection. Nevertheless, the surface modification of graphene is critical to achieve the high sensitivity and specificity required for biological detection. Herein, native bovine serum albumin (BSA) in inorganic solution is denatured on the graphene surface by heating, leading to the formation of nanoscale BSA protein films adsorbed on the graphene substrate via π-stacking interactions. This technique yields a controllable, scalable, uniform, and high-coverage method for graphene biosensors. Further, the application of such nanoscale heat-denatured BSA films on graphene as a universal graphene biosensor platform is explored. The thickness of heat-denatured BSA films increased with heating time and BSA concentration but decreased with solvent concentration as confirmed by atomic force microscopy. The noncovalent interaction between denatured BSA films and graphene was investigated by Raman spectroscopy. BSA can act as a p-type and n-type dopant by modulating pH-dependent net charges on the layered BSA-graphene surface, as assessed by current-voltage measurements. Chemical groups of denatured BSA films, including amino and carboxyl groups, were verified by X-ray photoelectron microscopy, attenuated total reflectance-Fourier transform infrared spectra, and fluorescent labeling. The tailoring of the BSA-graphene surfaces through chemical modification, controlled thickness, and doping type via noncovalent interactions provides a controllable, multifunctional biosensor platform for molecular diagnosis without the possibility of nonspecific adsorption on graphene.

Thiol-Ene Modified Amorphous Carbon Substrates: Surface Patterning and Chemically Modified Electrode Preparation

Amorphous carbon (aC) films are chemically stable under ambient conditions or when interfaced with aqueous solutions, making them a promising material for preparing biosensors and chemically modified electrodes. There are a number of wet chemical methods capable of tailoring the reactivity and wettability of aC films, but few of these chemistries are compatible with photopatterning. Here, we introduce a method to install thiol groups directly onto the surface of aC films. These terminal thiols are compatible with thiol-ene click reactions, which allowed us to rapidly functionalize and pattern the surface of the aC films. We thoroughly characterized the aC films and confirmed the installation of surface-bound thiols does not significantly oxidize the surface or change its topography. We also determined the conditions needed to selectively attach alkene-containing molecules to these films and show the reaction is proceeding through a thiol-mediated reaction. Lastly, we demonstrate the utility of our approach by photopatterning the aC films and preparing ferrocene-modified aC electrodes. The chemistry described here provides a rapid means of fabricating sensors and preparing photoaddressable arrays of (bio)molecules on stable carbon interfaces.

Germanium oxide removal by citric acid and thiol passivation from citric acid-terminated Ge(100)

Many applications of germanium (Ge) are underpinned by effective oxide removal and surface passivation. This important surface treatment step often requires H-X (X = Cl, Br, I) or HF etchants. Here, we show that aqueous citric acid solutions are effective in the removal of GeOx. The stability of citric acid-treated Ge(100) is compared to HF and HCl treated surfaces and analyzed by X-ray photoelectron spectroscopy. Further Ge surface passivation was investigated by thiolation using alkane monothiols and dithiols. The organic passivation layers show good stability with no oxide regrowth observed after 3 days of ambient exposure.

High-fidelity chemical patterning on oxide-free germanium

Oxide-free germanium can be chemically patterned directly with self-assembled monolayers of n-alkanethiols via submerged microcontact printing. Native germanium dioxide is water soluble; immersion activates the germanium surface for self-assembly by stripping the oxide. Water additionally provides an effective diffusion barrier that prevents undesired ink transport. Patterns are stable with respect to molecular exchange by carboxyl-functionalized thiols.

Preparation and characterization of an ordered 1-dodecanethiol monolayer on bare Si(111) surface

We have grown 1-dodecandthiol (DDT) monolayer on a bare Si(111) surface through ultraviolet-assisted photochemical reaction. The resulting monolayer was investigated by means of water contact angle measurement, synchrotron radiation-based high-resolution X-ray photoelectron spectroscopy, and polarization-dependent near-edge X-ray absorption fine structure spectroscopy. These combined probes for characterization reveal a hydrophobic ambient surface; the DDT was directly attached to Si through a Si-S bond, and the molecules formed an ordered monolayer with an average tilt angle of 57° of the alkyl chains relative to the substrate surface.

Disulfide passivation of the Ge(100)-2 × 1 surface

Understanding the bonding of sulfur at the germanium surface is important to developing good passivation routes for germanium-based electronic devices. The adsorption behavior of ethyl disulfide (EDS) and 1,8-naphthalene disulfide (NDS) at the Ge(100)-2 × 1 surface has been studied under ultrahigh vacuum conditions to investigate both their fundamental reactivity and their effectiveness as passivants of this surface. X-ray photoelectron spectroscopy, multiple internal reflection-infrared spectroscopy, and density functional theory results indicate that both molecules adsorb via S-S dissociation at room temperature. Upon exposure to ambient air, the thiolate adlayer remains intact for both EDS- and NDS-functionalized surfaces, indicating the stability of this surface attachment. Although both systems resist oxidation compared to the bare Ge(100)-2 × 1 surface, the Ge substrate is significantly oxidized in all cases (17-57% relative to the control), with the NDS-passivated surface undergoing up to two times more oxidation than the EDS-passivated surface at the longest air exposure times studied. The difference in passivation capability is attributed to the difference in surface coverage on Ge(100)-2 × 1, where EDS adsorption leads to a saturation coverage 17% higher than that for NDS/Ge(100)-2 × 1.

PEGylation of carboxylic acid-functionalized germanium nanowires

Germanium (Ge) nanowires were produced in solution by supercritical fluid-liquid-solid (SFLS) growth and then functionalized with carboxylic acid groups by in situ thermal thiolation with mercaptoundecanoic acid. Polyethylene glycol (PEG) was grafted to the carboxylic acid-terminated Ge nanowires using carbodiimide coupling chemistry. The nanowires were characterized using attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy and transmission electron microscopy (TEM) to confirm the surface modification of the nanowires. Dispersions of PEGylated Ge nanowires in dimethylsulfoxide (DMSO) were stable for days. The PEGylated Ge nanowires were also dispersible in aqueous solution over a wide range of pH and ionic strength.

The Formation and Stability of Alkylthiol Monolayers on Carbon Substrates

The formation and stability of alkylthiol monolayers on amorphous carbon thin films are investigated. Alkylthiol monolayers were prepared via a two-step, wet chemical process in which the carbon surface was first halogenated and then incubated with (4-(trifluoromethyl)phenyl)methanethiol (4tBM). The 4tBM covalently attaches to the surface in a substitution reaction in which the 4tBM thiol replaces the surface halogen. Studies of the substitution mechanism showed that monolayer formation is affected by the nature of the surface-bound halogen as well as the concentration and nucleophilicity of the 4tBM sulfur atom, consistent with a bimolecular (S(N)2) substitution reaction mechanism. The alkylthiol monolayers are stable over a wide range of solvent, pH, and temperature conditions.

Molecular self-assembly at bare semiconductor surfaces: cooperative substrate-molecule effects in octadecanethiolate monolayer assemblies on GaAs(111), (110), and (100)

The structures of self-assembled monolayers formed by chemisorption of octadecanethiol onto the surfaces of GaAs(001), (110), (111-A)-Ga, and (111-B)-As have been characterized in detail by a combination of X-ray photoelectron, near-edge X-ray absorption fine structure, and infrared spectroscopies and grazing incidence X-ray diffraction. In all cases, the molecular lattices are ordered with hexagonal symmetry, even for the square and rectangular intrinsic substrate (001) and (110) lattices, and the adsorbate lattice spacings are all incommensurate with their respective intrinsic substrate lattices. These results definitively show that the monolayer organization is driven by intermolecular packing forces to assemble in a hexagonal motif, such as would occur in the approach to a limit for an energetically featureless surface. The accompanying introduction of strain into the soft substrate surface lattice via strong S substrate bonds forces the soft substrate lattice to compliantly respond, introducing quasi-2D strain. A notably poorer organization for the (111-A)-Ga case compared to the (111-B)-As and other faces indicates that that the Ga-terminated surface lattice is more resistant to adsorbate packing-induced stress. Overall, the results show that surface molecular self-assembly must be considered as a strongly cooperative process between the substrate surface and the adsorbate and that inorganic substrate surfaces should not be considered as necessarily rigid when strong intermolecular adsorbate packing forces are operative.

Reaction mechanism, bonding, and thermal stability of 1-alkanethiols self-assembled on halogenated Ge surfaces

We have employed synchrotron radiation photoemission spectroscopy to study the reaction mechanism, surface bonding, and thermal stability of 1-octadecanethiolate (ODT) self-assembled monolayers (SAMs) at Cl- and Br-terminated Ge(100) surfaces. Density functional theory (DFT) calculations were also carried out for the same reactions. From DFT calculations, we have found that adsorption of 1-octadecanethiol on the halide-terminated surface via hydrohalogenic acid elimination is kinetically favorable on both Cl- and Br-terminated Ge surfaces at room temperature, but the reactions are more thermodynamically favorable at Cl-terminated Ge surfaces. After ODT SAM formation at room temperature, photoemission spectroscopy experiments show that Ge(100) and (111) surfaces contain monothiolates and possibly dithiolates together with unbound thiol and atomic sulfur. Small coverages of residual halide are also observed, consistent with predictions by DFT. Annealing studies in ultrahigh vacuum show that the Ge thiolates are thermally stable up to 150 degrees C. The majority of the surface thiolates are converted to sulfide and carbide upon annealing to 350 degrees C. By 430 degrees C, no sulfur remains on the surface, whereas Ge carbide is stable to above 470 degrees C.