Naphthodithiophene Diimide (NDTI)-Based Semiconducting Copolymers: From Ambipolar to Unipolar n-Type Polymers

Naphthodithiophene-Fused Porphyrins: Synthesis, Characterization, and Impact of Extended Conjugation on Aromaticity

The fusion of tetrapyrroles with aromatic heterocycles constitutes a useful tool for manipulating their opto-electronic properties. In this work, the synthesis of naphthodithiophene-fused porphyrins was achieved through a Heck reaction-based cascade of steps followed by the Scholl reaction. The naphthodithiophene-fused porphyrins display a unique set of optical and electronic properties. Fusion of the naphtho[2,1-b:3,4-b']dithiophene to porphyrin (F2VTP) leads to a ~20% increase in the fluorescence lifetime, which is accompanied, unexpectedly, by a more than two-fold drop in the emission quantum yield (ϕ=0.018). In contrast, fusion of the isomeric naphtho[1,2-b:4,3-b']dithiophene to porphyrin (F3VPT) results in a ~1.5-fold increase in the fluorescence quantum yield (ϕ=0.13) with a concomitant ~30 % increase in the fluorescence lifetime. This behavior suggests that fusion of the porphyrin with the naphthodithiopheno-system mainly affects the radiative rate constant in the Q-state deactivation pathway, where the effects of the isomeric naphtho[2,1-b:3,4-b']dithiophene- versus naphtho[1,2-b:4,3-b']dithiophene-fusion are essentially the opposite. Interestingly, nucleus-independent chemical shifts analysis revealed a considerable difference between the aromaticities of these two isomeric systems. Our results demonstrate that subtle structural differences in the fused components of the porphyrin can be reflected in rather significant differences between the photophysical properties of the resulting systems.

Recent advances in n-type and ambipolar organic semiconductors and their multi-functional applications

Organic semiconductors have received broad attention and research interest due to their unique integration of semiconducting properties with structural tunability, intrinsic flexibiltiy and low cost. In order to meet the requirements of organic electronic devices and their integrated circuits, p-type, n-type and ambipolar organic semiconductors are all necessary. However, due to the limitation in both material synthesis and device fabrication, the development of n-type and ambipolar materials is quite behind that of p-type materials. Recent development in synthetic methods of organic semiconductors greatly enriches the range of n-type and ambipolar materials. Moreover, the newly developed materials with multiple functions also put forward multi-functional device applications, including some emerging research areas. In this review, we give a timely summary on these impressive advances in n-type and ambipolar organic semiconductors with a special focus on their synthesis methods and advanced materials with enhanced properties of charge carrier mobility, integration of high mobility and strong emission and thermoelectric properties. Finally, multi-functional device applications are further demonstrated as an example of these developed n-type and ambipolar materials.

Thiazole Imide-Based All-Acceptor Homopolymer with Branched Ethylene Glycol Side Chains for Organic Thermoelectrics

n-Type semiconducting polymers with high thermoelectric performance remain challenging due to the scarcity of molecular design strategy, limiting their applications in organic thermoelectric (OTE) devices. Herein, we provide a new approach to enhance the OTE performance of n-doped polymers by introducing acceptor-acceptor (A-A) type backbone bearing branched ethylene glycol (EG) side chains. When doped with 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI), the A-A homopolymer PDTzTI-TEG exhibits n-type electrical conductivity (σ) up to 34 S cm^-1 and power factor value of 15.7 μW m^-1  K^-2 . The OTE performance of PDTzTI-TEG is far greater than that of homopolymer PBTI-TEG (σ=0.27 S cm^-1 ), indicating that introducing electron-deficient thiazole units in the backbone further improves the n-doping efficiency. These results demonstrate that developing A-A type polymers with EG side chains is an effective strategy to enhance n-type OTE performance.

Acceptor Modulation Strategies for Improving the Electron Transport in High-Performance Organic Field-Effect Transistors

High-performance ambipolar and electronic type semiconducting polymers are essential for fabricating various organic optoelectronic devices and complementary circuits. This review summarizes the strategies of improving the electron transport of semiconducting polymers via acceptor modulation strategies, which include the use of single, dual, triple, multiple, and all acceptors as well as the fusion of multiple identical acceptors to obtain new heterocyclic acceptors. To further improve the electron transport of semiconducting polymers, the introduction of strong electron-withdrawing groups can enhance the electron-withdrawing ability of donors and acceptors, thereby facilitating electron injection and suppressing hole accumulation. In addition, the relationships between the molecular structure, frontier molecular orbital energy levels, thin film morphology, microstructure, processing conditions, and device performances are also comprehensively discussed. Finally, the challenges encountered in this research area are proposed and the future outlook is presented.

syn/anti-Oligothienoacene Diimides with up to 10 Fused Rings

We report a facile and powerful strategy to prepare libraries of oligothienoacene diimides that include anti- and syn-isomers using palladium-catalyzed C-H activation and an unexpected 1,2-sulfur migration. Through this strategy, a series of oligothienoacene diimides containing 6, 8, and 10 fused rings were synthesized. The molecular geometry and extent of π-conjugation have dramatic effects on the electronic properties, degree of crystallinity, and charge-carrier transport properties. Notably, single-crystal microfibers of syn-3 c show electron mobilities up to 4.2 cm²  V^-1  s^-1 , illustrating the significant potential of these materials for organic electronic devices. Our work demonstrates the versatility of this strategy for the development of oligothienoacene diimide libraries, in particular complex and large syn-oligothienoacene diimides, which are difficult to prepare by present methods.

n-Type organic semiconducting polymers: stability limitations, design considerations and applications

This review outlines the design strategies which aim to develop high performing n-type materials in the fields of organic thin film transistors (OTFT), organic electrochemical transistors (OECT) and organic thermoelectrics (OTE). Figures of merit for each application and the limitations in obtaining these are set out, and the challenges with achieving consistent and comparable measurements are addressed. We present a thorough discussion of the limitations of n-type materials, particularly their ambient operational instability, and suggest synthetic methods to overcome these. This instability originates from the oxidation of the negative polaron of the organic semiconductor (OSC) by water and oxygen, the potentials of which commonly fall within the electrochemical window of n-type OSCs, and consequently require a LUMO level deeper than ∼-4 eV for a material with ambient stability. Recent high performing n-type materials are detailed for each application and their design principles are discussed to explain how synthetic modifications can enhance performance. This can be achieved through a number of strategies, including utilising an electron deficient acceptor-acceptor backbone repeat unit motif, introducing electron-withdrawing groups or heteroatoms, rigidification and planarisation of the polymer backbone and through increasing the conjugation length. By studying the fundamental synthetic design principles which have been employed to date, this review highlights a path to the development of promising polymers for n-type OSC applications in the future.

Enhancing the Photovoltaic Performance of a Benzo[c][1,2,5]thiadiazole-Based Polymer Donor via a Non-Fullerene Acceptor Pairing Strategy

As a well-known electron-withdrawing group, benzo[c][1,2,5]thiadiazole (BT) has been intensively studied and adopted to construct polymer donors with tunable band gaps. However, polymer solar cells (PSCs) with BT-based polymer donors, limited by the weak absorption and inflexible energy level of fullerene derivatives, usually suffer mediocre power conversion efficiencies (PCEs). Here, through subtly tailoring a BT unit with asymmetric fluoro and alkyloxy groups and judiciously pairing a BT-based polymer donor with three narrow band gap non-fullerene acceptors (e.g., IEICO-4F, ITOIC-2F, and IDTCN-O), active layers with complementary absorption spectra, small lowest unoccupied molecular orbital (LUMO) offsets, and preferred morphologies have been achieved. Consequently, PSCs with excellent J_sc values (over 20 mA/cm²) and high PCEs up to 12.33% have been obtained. To the best of our knowledge, the value of 12.33% is among the highest PCEs for BT-based polymers in binary PSCs so far. This work demonstrates that the cooperative effect of energy levels, absorption spectra, and morphologies between the donors and acceptors is crucial for governing the performance of organic photovoltaics.

Naphthodithiophenediimide-Bithiopheneimide Copolymers for High-Performance n-Type Organic Thermoelectrics: Significant Impact of Backbone Orientation on Conductivity and Thermoelectric Performance

The development of n-type conjugated polymers with high electrical conductivity (σ) has continued to pose a massive challenge in organic thermoelectrics (OTEs). New structural insights into the charge-carrier transport are necessitated for the realization of high-performance OTEs. In this study, three new n-type copolymers, named pNB, pNB-Tz, and pNB-TzDP, consisting of naphthodithiophenediimide (NDTI) and bithiopheneimide (BTI) units, are synthesized by direct arylation polymerization. The backbone orientation is altered by incorporating thiazole units into the backbone and tuning the branching point of the side chain. The alteration of the backbone orientation from face-on to bimodal orientation with both face-on and edge-on fractions significantly impacts the σ and the power factors (PFs) of the polymers. As a result, pNB-TzDP, with the bimodal orientation, demonstrates a high σ of up to 11.6 S cm^-1 and PF of up to 53.4 µW m^-1 K^-2 , which are among the highest in solution-processed n-doped conjugated polymers reported so far. Further studies reveal that the bimodal orientation of pNB-TzDP introduces 3D conduction channels and leads to better accommodation of dopants, which should be the key factors for the excellent thermoelectric performance.

Two Isomeric Azulene-Decorated Naphthodithiophene Diimide-based Triads: Molecular Orbital Distribution Controls Polarity Change of OFETs Through Connection Position

Altering the charge carrier transport polarities of organic semiconductors by molecular orbital distribution has gained great interest. Herein, we report two isomeric azulene-decorated naphthodithiophene diimide (NDTI)-based triads (e.g., NDTI-B2Az and NDTI-B6Az), in which two azulene units were connected with NDTI at the 2-position of the azulene ring in NDTI-B2Az, whereas two azulene units were incorporated with NDTI at the 6-position of the azulene ring in NDTI-B6Az. The two isomeric triads were excellently soluble in common organic solvents. Density functional theory calculations on the molecular orbital distributions of the triads reveal that the lowest unoccupied molecular orbitals are completely delocalized over the entire molecule for both NDTI-B2Az and NDTI-B6Az, indicating great potential for n-type transport behavior, whereas the highest occupied molecular orbitals are mainly delocalized over the entire molecule for NDTI-B2Az or only localized at the two terminal azulene units for NDTI-B6Az, implying great potential for p-type transport behavior for the former and a disadvantage of hole carrier transport for the latter. Under ambient conditions, solution-processed bottom-gate top-contact transistors based on NDTI-B2Az showed ambipolar field-effect transistor (FET) characteristics with high electron and hole mobilities of 0.32 (effective electron mobility ≈0.14 cm² V^-1 s^-1 according to a reliability factor of 43%) and 0.03 cm² V^-1 s^-1 (effective hole mobility ≈0.01 cm² V^-1 s^-1 according to a reliability factor of 33%), respectively, whereas a typically unipolar n-channel behavior is found for a film of NDTI-B6Az with a high electron mobility up to 0.13 cm² V^-1 s^-1 (effective electron mobility ≈0.06 cm² V^-1 s^-1 according to a reliability factor of 43%). The results indicate that the polarity change of organic FETs based on the two isomeric triads could be controlled by the molecular orbital distributions through the connection position between the azulene unit and NDTI.

Gate-tunable gas sensing behaviors in air-stable ambipolar organic thin-film transistors

Chemiresistive gas sensors, which exploit their electrical resistance in response to changes in nearby gas environments, usually achieve selective gas detection using multi-element sensor arrays. As large numbers of sensors are required, they often suffer from complex and high-cost fabrication. Here, we demonstrate an ambipolar organic thin-film transistor as a potential multi-gas sensing device utilizing gate-tunable gas sensing behaviors. Combining behaviors of both electron and hole carriers in a single device, the proposed device showed dynamic changes depending on gate biases and properties of target gases. As a result, the gas response as a function of gate biases exhibits a unique pattern towards a specific gas as well as its concentrations, which is very different from conventional unipolar organic thin-film transistors. In addition, our device showed an excellent air-stable characteristic compared to typical ambipolar transistors, providing great potential for practical use in the future.

Ambipolar organic field effect transistor shows a great potential to be used for multi-gas sensing device utilizing gate-tunable gas sensing behaviors.

The Effects of Side Chains on the Charge Mobilities and Functionalities of Semiconducting Conjugated Polymers beyond Solubilities

Recent decades have witnessed the rapid development of semiconducting polymers in terms of high charge mobilities and applications in transistors. Significant efforts have been made to develop various conjugated frameworks and linkers. However, studies are increasingly demonstrating that the side chains of semiconducting polymers can significantly affect interchain packing, thin film crystallinity, and thus semiconducting performance. Ways to modify the side alkyl chains to improve the interchain packing order and charge mobilities for conjugated polymers are first discussed. It is shown that modifying the branching chains by moving the branching points away from the backbones can boost the charge mobilities, which can also be improved through partially replacing branching chains with linear ones. Second, the effects of side chains with heteroatoms and functional groups are discussed. The siloxane-terminated side chains are utilized to enhance the semiconducting properties. The fluorinated alkyl chains are beneficial for improving both charge mobility and air stability. Incorporating H bonding group side chains can improve thin film crystallinities and boost charge mobilities. Notably, incorporating functional groups (e.g., glycol, tetrathiafulvalene, and thymine) into side chains can improve the selectivity of field-effect transistor (FET)-based sensors, while photochromic group containing side chains in conjugated polymers result in photoresponsive semiconductors and optically tunable FETs.

Multisubstituted Azaisoindigo-Based Polymers for High-Mobility Ambipolar Thin-Film Transistors and Inverters

Ambipolar semiconducting materials have great potential in complementary-like organic logic circuits. Accessing such logic circuits demands balanced hole and electron mobilities. However, the lack of ambipolar high-mobility polymer semiconductors with balanced charge carrier-transporting properties precludes the rapid development of organic logic circuits. In this context, structural modification of semiconductor materials to enhance the electron/hole transport is of great urgency. Herein, a multifunctionalization strategy is used to achieve this goal. Combined electron-withdrawing moieties involving fluorine and pyridinic nitrogen atoms can not only reduce the frontier molecular orbital energies but also planarize the polymer backbone, demonstrating synergetic effects on the control over the carrier injection process at the metal-semiconductor interface and microstructure-sensitive charge transport in the channel. A balanced ambipolar behavior with electron/hole mobilities of 3.88/3.44 cm² V^-1 s^-1 was observed, and complementary-like inverters with high gains of greater than 200 were achieved. Microstructure and thin-film morphology were characterized to further reveal the relationship between device performances and macroscopic observables. This multifunctionalization strategy bodes well for developing new ambipolar semiconducting materials.

Significant Difference in Semiconducting Properties of Isomeric All-Acceptor Polymers Synthesized via Direct Arylation Polycondensation

The direct arylation polycondensation (DArP) appeared as an efficient method for producing semiconducting polymers but often requires acceptor monomers with orienting or activating groups for the reactive carbon-hydrogen (C-H) bonds, which limits the choice of acceptor units. In this study, we describe a DArP for producing high-molecular-weight all-acceptor polymers composed of the acceptor monomers without any orienting or activating groups via a modified method using Pd/Cu co-catalysts. We thus obtained two isomeric all-acceptor polymers, P1 and P2, which have the same backbone and side-chains but different positions of the nitrogen atoms in the thiazole units. This subtle change significantly influences their optoelectronic, molecular packing, and charge-transport properties. P2 with a greater backbone torsion has favorable edge-on orientations and a high electron mobility μ_e of 2.55 cm²  V^-1  s^-1 . Moreover, P2-based transistors show an excellent shelf-storage stability in air even after the storage for 1 month.

Improving the Electronic Transporting Property for Flexible Field-Effect Transistors with Naphthalene Diimide-Based Conjugated Polymer through Branching/Linear Side-Chain Engineering Strategy

n-Type organic/polymeric semiconductors with high electron mobilities are highly demanded for future flexible organic circuits. Except for developing a new conjugated backbone, recent studies show that side-chain engineering also plays an indispensable role in boosting the charge-transporting property. In this paper, we report a new polymer PNDI2T-DTD with a representative n-type naphthalene diimide (NDI)-bithiophene backbone for high-performance n-type flexible thin-film transistors through branching/linear side-chain engineering strategy. Serving as the flexible side chains, the linear/branching side-chain pattern is found to be effective in tuning the preaggregation behavior in solution and the packing ordering of polymeric chains, resulting in the improvement of thin-film crystallinity. The electron mobility of the thin film of PNDI2T-DTD on flexible substrates can reach 1.52 cm² V^-1 s^-1, which is approximately five times higher than that of PNDI2T-DT with the same conjugated backbone and only branching alkyl chains.

High-Performance n-Channel Organic Transistors Using High-Molecular-Weight Electron-Deficient Copolymers and Amine-Tailed Self-Assembled Monolayers

While high-performance p-type semiconducting polymers are widely reported, their n-type counterparts are still rare in terms of quantity and quality. Here, an improved Stille polymerization protocol using chlorobenzene as the solvent and palladium(0)/copper(I) as the catalyst is developed to synthesize high-quality n-type polymers with number-average molecular weight up to 10⁵ g mol^-1 . Furthermore, by sp² -nitrogen atoms (sp² -N) substitution, three new n-type polymers, namely, pBTTz, pPPT, and pSNT, are synthesized, and the effect of different sp² -N substitution positions on the device performances is studied for the first time. It is found that the incorporation of sp² -N into the acceptor units rather than the donor units results in superior crystalline microstructures and higher electron mobilities. Furthermore, an amine-tailed self-assembled monolayer (SAM) is smoothly formed on a Si/SiO₂ substrate by a simple spin-coating technique, which can facilitate the accumulation of electrons and lead to more perfect unipolar n-type transistor performances. Therefore, a remarkably high unipolar electron mobility up to 5.35 cm² V^-1 s^-1 with a low threshold voltage (≈1 V) and high on/off current ratio of ≈10⁷ is demonstrated for the pSNT-based devices, which are among the highest values for unipolar n-type semiconducting polymers.

Theoretical investigations into the charge transfer properties of thiophene α-substituted naphthodithiophene diimides: excellent n-channel and ambipolar organic semiconductors

A theoretical study was carried out to investigate the electronic structures and the charge transport properties of a series of naphthodithiophene diimide (NDTI) thiophene α-substituted derivatives NDTI-X using density functional theory and classical Marcus charge transfer theory. This study deeply revealed the structure-property relationships by analyzing the intermolecular interactions in crystal structures of C8-NDTI and C8-NDTI-Cl thoroughly by using the Hirshfeld surface, QTAIM theories and symmetry-adapted perturbation theory (SAPT). Our results suggested that a 2-D brick-like π-stacking structure makes C8-NDTI-Cl a more excellent n-type semiconducting material with μ_max-e of 2.554 cm² V^-1 s^-1 than C8-NDTI with a herringbone-like slipped π-stacking motif. In addition, the calculated results showed that by modifying the thiophene α-positions of NDTI with electron-withdrawing substituents, -F, -Cl and -CN, low-lying LUMO energy levels and a high adiabatic electron affinity EA(a) can be obtained; while introducing electron-donating groups, benzene (-B), thiophene (-T), benzo[b]thiophene (-BT) and naphtha[2,3-b]thiophene (-NT), expanded the molecular π-conjugated backbone, and narrow band gaps, high EA(a) and small reorganization energies can be obtained. Theoretical simulations predict that NDTI-CN is an excellent air-stable n-type organic semiconducting material with an average electron mobility μ_e of up to 1.743 cm² V^-1 s^-1. Owing to their high EA(a), moderate adiabatic ionization potential IP(a) as well as small hole and electron reorganization energies, NDTI-BT and NDTI-NT are two well-balanced air-stable ambipolar semiconducting materials. The theoretical average hole/electron mobilities are as high as 2.708/3.739 cm² V^-1 s^-1 for C8-NDTI-NT and 1.597/2.350 cm² V^-1 s^-1 for C8-NDTI-BT, respectively.

Tuning the electronic properties of thiophene-annulated NDIs: the influence of the lateral fusion position

We report a new asymmetric thiophene-annulated naphthalenediimide with high electron mobilities.

Diketopyrrolopyrrole-Based Conjugated Polymer Entailing Triethylene Glycols as Side Chains with High Thin-Film Charge Mobility without Post-Treatments

Side chain engineering of conjugated donor-acceptor polymers is a new way to manipulate their optoelectronic properties. Two new diketopyrrolopyrrole (DPP)-terthiophene-based conjugated polymers PDPP3T-1 and PDPP3T-2, with both hydrophilic triethylene glycol (TEG) and hydrophobic alkyl chains, are reported. It is demonstrated that the incorporation of TEG chains has a significant effect on the interchain packing and thin-film morphology with noticeable effect on charge transport. Polymer chains of PDPP3T-1 in which TEG chains are uniformly distributed can self-assemble spontaneously into a more ordered thin film. As a result, the thin film of PDPP3T-1 exhibits high saturated hole mobility up to 2.6 cm2 V-1 s-1 without any post-treatment. This is superior to those of PDPP3T with just alkyl chains and PDPP3T-2. Moreover, the respective field effect transistors made of PDPP3T-1 can be utilized for sensing ethanol vapor with high sensitivity (down to 100 ppb) and good selectivity.

Naphthobischalcogenadiazole Conjugated Polymers: Emerging Materials for Organic Electronics

π-Conjugated polymers are an important class of materials for organic electronics. In the past decade, numerous polymers with donor-acceptor molecular structures have been developed and used as the active materials for organic devices, such as organic field-effect transistors (OFETs) and organic photovoltaics (OPVs). The choice of the building unit is the primary step for designing the polymers. Benzochalcogenadiazoles (BXzs) are one of the most familiar acceptor building units studied in this area. As their doubly fused system, naphthobischalcogenadiazoles (NXzs), i.e., naphthobisthiadiazole (NTz), naphthobisoxadiazole (NOz), and naphthobisselenadiazole (NSz) are emerging building units that provide interesting electronic properties and highly self-assembling nature for π-conjugated polymers. With these fruitful features, π-conjugated polymers based on these building units demonstrate great performances in OFETs and OPVs. In particular, in OPVs, NTz-based polymers have exhibited more than 10% efficiency, which is among the highest values reported so far. In this Progress Report, the synthesis, properties, and structures of NXzs and their polymers is summarized. The device performance is also highlighted and the structure-property relationships of the polymers are discussed.

Selective thionation of naphtho[2,3-b]thiophene diimide: tuning of the optoelectronic properties and packing structure

Naphtho[2,3-b]thiophene diimide was selectively thionated to afford the corresponding dicarboxy-dithiocarboxy diimide with a low-lying LUMO of −4.2 eV.

Control of Major Carriers in an Ambipolar Polymer Semiconductor by Self-Assembled Monolayers

Selective unipolarization of an ambipolar polymer semiconductor, PNDTI-BT, by using different self-assembled monolayers, is demonstrated. For p-unipolarization, 1H,1H,2H,2H-perfluorodecyltriethoxysilane is most effective, whereas for n-unipolarization, 3-(N, N'-dimethylamino)propyltriethoxysilane is the best. Using these selective unipolarization effects, the complementary inverters based on the ambipolar polymer fabricated by a simple solution process show greatly improved switching behaviors with low power consumption.

Electron-transporting polymers based on a double B←N bridged bipyridine (BNBP) unit

A series of BNBP-based polymer semiconductors are developed, which show good electron-transporting properties in organic thin film transistors.

Thiazole-Flanked Diketopyrrolopyrrole Polymeric Semiconductors for Ambipolar Field-Effect Transistors with Balanced Carrier Mobilities

In this paper we report three thiazole-flanked diketopyrrolopyrrole-based donor-acceptor alternating copolymers as new ambipolar semiconductors and their field-effect transistor devices with balanced hole and electron mobilities. Nitrile groups are introduced into the polymer backbone, and the substituent effect on electronic structures is studied. Different side chains are also involved to tune the interdigitation of the polymers. To probe the structural effects that contribute to the device performances, we provide insight into the thin-film microstructures and morphologies. Top-gate bottom-contact transistors fabricated under ambient conditions exhibit the impressive balanced hole and electron mobilities as high as 1.46 and 1.14 cm² V^-1 s^-1, respectively, which are among the highest values reported for ambipolar thiazole-flanked diketopyrrolopyrrole-based polymers. Additionally, this class of ambipolar polymers also shows promise for complementary-like inverters with a high gain value of 163.

N,N'-Bis(2-cyclohexylethyl)naphtho[2,3-b:6,7-b']dithiophene Diimides: Effects of Substituents

Naphtho[2,3-b:6,7-b']dithiophene-4,5,9,10-tetracarboxylic diimide (NDTI) is a promising electron-deficient building block for n-type organic conductors, and the performance of NDTI-based field-effect transistors (FETs) is largely dependent on the substituents that alter the supramolecular organization in the solid state and, in turn, the intermolecular orbital overlap. For this reason, the rational selection of substituent on imide nitrogen atoms and/or thiophene α-positions is the key to developing superior n-type organic semiconductors. We here report new NDTI derivatives having N-(2-cyclohexylethyl) groups. Despite their one-dimensional packing structures in the solid state regardless of the presence or absence of chlorine groups at the thiophene α-positions, their FETs show promising performance with electron mobilities higher than 0.1 cm²·V(-1)·s(-1) under ambient conditions. We also discuss how the cyclohexylethyl groups affect the packing structure in comparison with analogous n-octyl derivatives having the same number of carbon atoms.