Fabrication of metallic nanodots in large-area arrays by mold-to-mold cross imprinting (MTMCI)

Control of the Nanopore Architecture of Anodic Alumina via Stepwise Anodization with Voltage Modulation and Pore Widening

Control of the morphology and hierarchy of the nanopore structures of anodic alumina is investigated by employing stepwise anodizing processes, alternating the two different anodizing modes, including mild anodization (MA) and hard anodization (HA), which are further mediated by a pore-widening (PW) step in between. For the experiment, the MA and HA are applied at the anodizing voltages of 40 and 100 V, respectively, in 0.3 M oxalic acid, at 1 °C, for fixed durations (30 min for MA and 0.5 min for HA), while the intermediate PW is applied in 0.1 M phosphoric acid at 30 °C for different durations. In particular, to examine the effects of the anodizing sequence and the PW time on the morphology and hierarchy of the nanopore structures formed, the stepwise anodization is conducted in two different ways: one with no PW step, such as MA→HA and HA→MA, and the other with the timed PW in between, such as MA→PW→MA, MA→PW→HA, HA→PW→HA, and HA→PW→MA. The results show that both the sequence of the voltage-modulated anodizing modes and the application of the intermediate PW step led to unique three-dimensional morphology and hierarchy of the nanopore structures of the anodic alumina beyond the conventional two-dimensional cylindrical pore geometry. It suggests that the stepwise anodizing process regulated by the sequence of the anodizing modes and the intermediate PW step can allow the design and fabrication of various types of nanopore structures, which can broaden the applications of the nanoporous anodic alumina with greater efficacy and versatility.

High-resolution and large-area nanoparticle arrays using EUV interference lithography

Well-defined model systems are needed for better understanding of the relationship between optical, electronic, magnetic, and catalytic properties of nanoparticles and their structure. Chemical synthesis of metal nanoparticles results in large size and shape dispersion and lack of lateral order. In contrast, conventional top-down lithography techniques provide control over the lateral order and dimensions. However, they are either limited in resolution or have low throughput and therefore do not enable the large patterning area needed to obtain good signal-to-noise ratio in common analytical and characterization techniques. Extreme ultraviolet (EUV) lithography has the throughput and simplicity advantages of photolithography as well as high resolution due to its wavelength. Using EUV achromatic Talbot lithography, we have obtained 15 nm particle arrays with a periodicity of about 100 nm over an area of several square centimeters with high-throughput enabling the use of nanotechnology for fabrication of model systems to study large ensembles of well-defined identical nanoparticles with a density of 10(10) particles cm(-2).

Gold nanoparticle wires for sensing DNA and DNA/protein interactions

The discontinuous Vertical Evaporation-driven Colloidal Deposition (dVECD) method has been used as a green technique for formatting nanoparticle wires by the direct deposition of nanoparticles from colloid suspensions onto hydrophilic substrates, without any lithographic procedures. Gold nanoparticles of different sizes are deposited into wire arrays for electronic detection of biological molecules. A sensitive detection of DNA molecules as low as ∼1 pM is achieved due to a high surface to volume ratio of the porous structures. The effects of the gold nanoparticles' size, DNA concentration, and DNA length on detection sensitivity of these gold nanoparticle wire sensors are discussed. Moreover, we can also detect the interaction between DNAs and proteins. Gold nanoparticle wires prepared by the nontoxic and simple dVECD are promising for detecting viruses involved in diseases.

Applications of electron beam lithography in surface science and catalysis – model-nano-array catalysts

Applications of electron beam lithography (EBL) in surface science and catalysis are detailed. Advantages and disadvantages of EBL in that field are critically discussed. Emphasis is placed on ultra-high vacuum model studies utilizing so-called model nano array catalysts which consist of a simple predetermined perriodic arrangement of clusters on a support. Discussed are surface reactions as well as the kinetics and dynamics of the interactions of gas-phase species with EBL catalysts. In addition, physical properties of these model catalysts are describes including theire cleaning, thermal stability, and composition.

Using colloid lithography to fabricate silicon nanopillar arrays on silicon substrates

In this study, we partially grafted geminal silanol groups in the protecting organic shells on the surfaces of gold nanoparticles (AuNPs) and then assembled the alkyl-AuNP-Si(OH)(4) particles onto the surfaces of silicon (Si) wafers. The density of assembled AuNPs on the Si surface was adjusted by varying the geminal silanol group content on the AuNP surface; at its optimal content, it approached the high assembly density (0.0254 particles/nm(2)) of an AuNP assembled monolayer. Using reactive-ion etching (RIE) with the templates as masks, we transferred the patterned AuNP assemblies to form large-area, size-tunable, Si nanopillar arrays, the assembly density of which was controlled by the dimensions of the AuNPs. Using this colloidal lithography (CL) process, we could generate Si nanopillars having sub-10-nm diameters and high aspect ratios. The water contact angles of the high-aspect-ratio Si nanopillars approached 150°. We used another fabrication process, involving electron beam lithography and oxygen plasma treatment, to generate hydrophilic 200-nm-resolution line patterns on a Si surface to assemble the AuNPs into 200-nm-resolution dense lines for use as an etching mask. Subsequent CL provided a patterned Si nanopillar array having a feature size of 200 nm on the Si surface. Using this approach, it was possible to pattern sub-10-nm Si nanopillar arrays having densities as high as 0.0232 nm(-2).

The fabrication of Ni quantum cross devices with a 17 nm junction and their current-voltage characteristics

Quantum cross (QC) devices which consist of two Ni thin films deposited on polyethylene naphthalate substrates with their edges crossing have been fabricated and their current-voltage characteristics have been investigated. The cross-sectional area between the two Ni electrodes, which was obtained without the use of electron-beam or optical lithography, can be as small as 17 nm x 17 nm. We have successfully obtained ohmic current-voltage characteristics, which show good agreement with calculation results within the framework of the modified Anderson model. The calculated results also predict a high switching ratio in excess of 100,000:1 for QC devices having the molecule sandwiched between the Ni electrodes. This indicates that QC devices having the molecule can be expected to have potential application in novel switching devices.

Wafer-scale patterning of sub-40 nm diameter and high aspect ratio (>50:1) silicon pillar arrays by nanoimprint and etching

We demonstrate wide-area fabrication of sub-40 nm diameter, 1.5 µm tall, high aspect ratio silicon pillar arrays with straight sidewalls by combining nanoimprint lithography (NIL) and deep reactive ion etching (DRIE). Imprint molds were used to pre-pattern nanopillar positions precisely on a 200 nm square lattice with long range order. The conventional DRIE etching process was modified and optimized with reduced cycle times and gas flows to achieve vertical sidewalls; with such techniques the pillar sidewall roughness can be reduced below 8 nm (peak-to-peak). In some cases, sub-50 nm diameter pillars, 3 µm tall, were fabricated to achieve aspect ratios greater than 60:1.

Unconventional methods for forming nanopatterns

Nanostructured materials have become an increasingly important theme in research, in no small part due to the potential impacts this science holds for applications in technology, including such notable areas as sensors, medicine, and high-performance integrated circuits. Conventional methods, such as the top-down approaches of projection lithography and scanning beam lithography, have been the primary means for patterning materials at the nanoscale. This article provides an overview of unconventional methods - both top-down and bottom-up approaches - for generating nanoscale patterns in a variety of materials, including methods that can be applied to fragile molecular systems that are difficult to pattern using conventional lithographic techniques. The promise, recent progress, advantages, limitations, and challenges to future development associated with each of these unconventional lithographic techniques will be discussed with consideration given to their potential for use in large-scale manufacturing.

Large area, 38 nm half-pitch grating fabrication by using atomic spacer lithography from aluminum wire grids

We wrapped 150 nm period aluminum wire grid polarizer (WGP) with AlSiOx by using atomic layer deposition at 250 degrees C. The nanometer precision coating defined the spacer to double the spatial frequency of the 100 mm diameter grating fabricated by using a legacy immersion holography setup at 351 nm wavelength. Half-pitch grating of approximately 38 nm was demonstrated with good pattern uniformity, excellent repeatability, and a wide processing window. We believe 10 nm half-pitch grating over even larger areas are viable, overcoming one major hurdle to commercialize nanoimprint.

Fabrication of arrays of sub-20-nm silica walls via photolithography and solution-based molecular coating

We report herein fabrication of arrays of sub-20-nm silica walls via photolithography and the surface sol-gel process. A photolithographically fabricated line template on a silicon wafer was coated with a silica nanolayer using the surface sol-gel process, and then the topmost portion of the silica layer and the template were successively removed using CHF(3) and oxygen plasma, respectively, leaving the sidewalls of the silica layers remaining on the substrate. These walls were fully self-supporting, and the thicknesses of silica wall were 6, 8, and 12 nm at 20, 30, and 60 cycles, respectively. The height/width ratio of the wall was 38 at the 30-cycle coating. This ratio is surprisingly high when compared to that of the conventional photolithography processes. Successive formation of the silica, polymer, and silica layers yielded a trilayer sidewall, and the spacer polymer layer could be selectively removed to form a doubled sidewall. Size reduction and proliferation of sub-20-nm silica wall was thus achieved. The reported method is simple and cost-efficient and opens a gateway to further miniaturization of nanostructures.