Size-dependent polar ordering in colloidal GeTe nanocrystals

Germylenes Exhibiting Solid-State Emissions that Extend to NIR

Low-valent main group compounds that fluoresce in the solid-state were previously unknown. To address this, we investigated room-temperature photoluminescence from a series of crystals of germylenes 3-8 in this article; they exhibited emissions nearly reaching the NIR. Germylene carboxylates (3-8) were synthesized by reacting dipyrromethene stabilized germylene pyrrolide (2) with carboxylic acids such as acetic acid, trifluoroacetic acid, benzoic acid, p-cyanobenzoic acid, p-nitrobenzoic acid, and acetylsalicylic acid.

Anisotropy and thermal properties in GeTe semiconductor by Raman analysis

Low-symmetric GeTe semiconductors have attracted wide-ranging attention due to their excellent optical and thermal properties, but only a few research studies are available on their in-plane optical anisotropic nature that is crucial for their applications in optoelectronic and thermoelectric devices. Here, we investigate the optical interactions of anisotropy in GeTe using polarization-resolved Raman spectroscopy and first-principles calculations. After determining both armchair and zigzag directions in GeTe crystals by transmission electron microscopy, we found that the Raman intensity of the two main vibrational modes had a strong in-plane anisotropic nature; the one at ∼88.1 cm-1 can be used to determine the crystal orientation, and the other at ∼124.6 cm-1 can reveal a series of temperature-dependent phase transitions. These results provide a general approach for the investigation of the anisotropy of light-matter interactions in low-symmetric layered materials, benefiting the design and application of optoelectronic, anisotropic thermoelectric, and phase-transition memory devices based on bulk GeTe.

Colloidal Ternary Telluride Quantum Dots for Tunable Phase Change Optics in the Visible and Near-Infrared

A structural change between amorphous and crystalline phase provides a basis for reliable and modular photonic and electronic devices, such as nonvolatile memory, beam steerers, solid-state reflective displays, or mid-IR antennas. In this paper, we leverage the benefits of liquid-based synthesis to access phase-change memory tellurides in the form of colloidally stable quantum dots. We report a library of ternary M_xGe_1-xTe colloids (where M is Sn, Bi, Pb, In, Co, Ag) and then showcase the phase, composition, and size tunability for Sn-Ge-Te quantum dots. Full chemical control of Sn-Ge-Te quantum dots permits a systematic study of structural and optical properties of this phase-change nanomaterial. Specifically, we report composition-dependent crystallization temperature for Sn-Ge-Te quantum dots, which is notably higher compared to bulk thin films. This gives the synergistic benefit of tailoring dopant and material dimension to combine the superior aging properties and ultrafast crystallization kinetics of bulk Sn-Ge-Te, while improving memory data retention due to nanoscale size effects. Furthermore, we discover a large reflectivity contrast between amorphous and crystalline Sn-Ge-Te thin films, exceeding 0.7 in the near-IR spectrum region. We utilize these excellent phase-change optical properties of Sn-Ge-Te quantum dots along with liquid-based processability for nonvolatile multicolor images and electro-optical phase-change devices. Our colloidal approach for phase-change applications offers higher customizability of materials, simpler fabrication, and further miniaturization to the sub-10 nm phase-change devices.

Phonon anharmonicity in binary chalcogenides for efficient energy harvesting

Thermoelectric (TE) materials have received much attention due to their ability to harvest waste heat energy. TE materials must exhibit a low thermal conductivity (κ) and a high power factor (PF) for efficient conversion. Both factors define the figure of merit (ZT) of the TE material, which can be increased by suppressing κ without degrading the PF. Recently, binary chalcogenides such as SnSe, GeTe, and PbTe have emerged as attractive candidates for thermoelectric energy generation at moderately high temperatures. These materials possess simple crystal structures with low κ in their pristine forms, which can be further lowered through doping and other approaches. Here, we review the recent advances in the temperature-dependent behavior of phonons and their influence on the thermal transport properties of chalcogenide-based TE materials. Because phonon anharmonicity is one of the fundamental contributing factors for low thermal conductivity in SnSe, Sb-doped GeTe, and related chalcogenides, we discuss complementary experimental approaches such as temperature-dependent Raman spectroscopy, inelastic neutron scattering, and calorimetry to measure anharmonicity. We further show how data gathered using multiple techniques helps us understand and engineer better TE materials. Finally, we discuss the rise of machine learning-aided efforts to discover, design, and synthesize TE materials of the future.

Scaling and Confinement in Ultrathin Chalcogenide Films as Exemplified by GeTe

Chalcogenides such as GeTe, PbTe, Sb₂ Te₃ , and Bi₂ Se₃ are characterized by an unconventional combination of properties enabling a plethora of applications ranging from thermo-electrics to phase change materials, topological insulators, and photonic switches. Chalcogenides possess pronounced optical absorption, relatively low effective masses, reasonably high electron mobilities, soft bonds, large bond polarizabilities, and low thermal conductivities. These remarkable characteristics are linked to an unconventional bonding mechanism characterized by a competition between electron delocalization and electron localization. Confinement, that is, the reduction of the sample dimension as realized in thin films should alter this competition and modify chemical bonds and the resulting properties. Here, pronounced changes of optical and vibrational properties are demonstrated for crystalline films of GeTe, while amorphous films of GeTe show no similar thickness dependence. For crystalline films, this thickness dependence persists up to remarkably large thicknesses above 15 nm. X-ray diffraction and accompanying simulations employing density functional theory relate these changes to thickness dependent structural (Peierls) distortions, due to an increased electron localization between adjacent atoms upon reducing the film thickness. A thickness dependence and hence potential to modify film properties for all chalcogenide films with a similar bonding mechanism is expected.

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.

Three-Dimensional Limit of Bulk Rashba Effect in Ferroelectric Semiconductor GeTe

Ferroelectric Rashba semiconductors (FERSCs) have recently attracted intensive attention due to their giant bulk Rashba parameter, α_R, which results in a locking between the spin degrees of freedom and the switchable electric polarization. However, the integration of FERSCs into microelectronic devices has provoked questions concerning whether the Rashba effect can persist when the material thickness is reduced to several nanometers. Here we find that α_R can keep a large value of 2.12 eV Å in the 5.0 nm thick GeTe film. The behavior of α_R with thickness can be expressed by the scaling law and provides a 3D thickness limit of the bulk Rashba effect, d_c = 2.1 ± 0.5 nm. Finally, we find that the thickness can modify the Berry curvature as well, which influences the polarization and consequently alters the α_R. Our results give insight into understanding the factors influencing α_R in FERSCs and pave a novel route for designing Rashba-type quantum materials.

Two-Dimensional GeTe: Air Stability and Photocatalytic Performance for Hydrogen Evolution

As a key method to convert solar into chemical energy, photocatalytic water decomposition has garnered attention. Moreover, the development of graphene and graphene-like two-dimensional (2D) materials has brought fresh vitality in the field of photocatalysis. Here, we prepared two to four layers of GeTe nanosheets by ultrasonic-assisted liquid-phase exfoliation in argon and air, which we referred to as Ar-GeTe and O-GeTe, respectively. The photocatalytic hydrogen production potential of 2D GeTe was experimentally investigated for the first time. The results indicated that minimally layered GeTe samples are indirect-gap semiconductors with the GeTe band gap increasing after oxidation. All samples have suitable band positions that can drive photocatalytic water splitting into H₂ under mild conditions, providing maximum hydrogen evolution rates of 1.13 mmol g^-1 h^-1 (Ar-GeTe) and 0.54 mmol g^-1 h^-1 (O-GeTe). With density functional theory computations, the structural stability of GeTe in air was discussed, revealing that oxygen atoms could easily combine with Ge to form a more stable structure, thus impacting the photocatalytic performance of 2D GeTe. Therefore, the light requirement and oxygen deficiency of the material give an advantage in the field of energy supply in space.

Enhancing the thermoelectric performance of Sn0.5Ge0.5Te via doping with Sb/Bi and alloying with Cu2Te: Optimization of transport properties and thermal conductivities

The current work provides a comparative study of the thermoelectric properties of the Sn_0.5Ge_0.5Te phases doped with Sb and Bi and alloyed with Cu₂Te. The Sn_0.5Ge_0.5Te composition was chosen based on the fact that it delivers the highest ZT value within the Sn_1-xGe_xTe series (x≤ 0.5). Doping Sn_0.5Ge_0.5Te with electron-richer Sb and Bi improves both the charge transport properties and thermal conductivities. Alloying with Cu₂Te optimizes the thermoelectric performance of the samples even further, yielding a ZT value of 0.99 for (Sn_0.5Ge_0.5)_0.91Bi_0.06Te(Cu₂Te)_0.05 at 500 °C. Hall measurements were performed to understand the effects of doping and alloying.

Pressure-Induced Phase Transitions in Germanium Telluride: Raman Signatures of Anharmonicity and Oxidation

Pressure-induced phase transitions in GeTe, a prototype phase change material, have been studied to date with diffraction which is not sensitive to anharmonicity-induced dynamical effects. GeTe is also prone to surface oxidation which may compromise surface sensitive measurements. These factors could be responsible for the lack of clarity about the phases and transitions intervening in the phase diagram of GeTe. We have used high-pressure Raman scattering and ab initio pseudopotential density functional calculations to unambiguously establish the high-pressure phase diagram and identify three phases up to 57 GPa, a low-pressure rhombohedral phase, an intermediate pressure cubic phase, and a high-pressure orthorhombic phase. We detect substantial broadening and softening of Raman modes at low pressure and identify the transition regions and possible intermediate phases.

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity at the nanoscale into next-generation memory and logic devices. This is because their ferroelectric polarization becomes more robust as the size is reduced, exposing a type of ferroelectricity whose mechanism still remains to be understood. Thin films with increased crystal quality are therefore needed. We report the epitaxial growth of Hf_0.5Zr_0.5O₂ thin films on (001)-oriented La_0.7Sr_0.3MnO₃/SrTiO₃ substrates. The films, which are under epitaxial compressive strain and predominantly (111)-oriented, display large ferroelectric polarization values up to 34 μC cm^-2 and do not need wake-up cycling. Structural characterization reveals a rhombohedral phase, different from the commonly reported polar orthorhombic phase. This finding, in conjunction with density functional theory calculations, allows us to propose a compelling model for the formation of the ferroelectric phase. In addition, these results point towards thin films of simple oxides as a vastly unexplored class of nanoscale ferroelectrics.

Sonication-assisted liquid-phase exfoliated α-GeTe: a two-dimensional material with high Fe3+ sensitivity

We describe sonication-assisted liquid-phase exfoliation of rhombohedral germanium telluride (α-GeTe) to obtain a good dispersion of α-GeTe nanosheets in ethanol. The thickness of the α-GeTe nanosheets is dependent on the exfoliation conditions, and few-layer α-GeTe nanosheets of 2-4 layers and even monolayer α-GeTe were obtained. We use first-principles calculations to investigate the structural, electronic, and optical properties of monolayer and bulk α-GeTe and compare the optical band gap of centrifugally fractionated α-GeTe nanosheet dispersions with the computational predictions. We demonstrate that few layer α-GeTe nanosheets are purified selectively through centrifugation, and they exhibit high sensitivity to Fe3+. The scalable production of two-dimensional α-GeTe nanosheets can be used in the future optoelectronic industry.

Resolving Crystallization Kinetics of GeTe Phase-Change Nanoparticles by Ultrafast Calorimetry

Chalcogenide-based phase change materials (PCMs) are promising candidates for the active element in novel electrical nonvolatile memories and have been applied successfully in rewritable optical disks. Nanostructured PCMs are considered as the next generation building blocks for their low power consumption, high storage density, and fast switching speed. Yet their crystallization kinetics at high temperature, the rate-limiting property upon switching, faces great challenges due to the short time and length scales involved. Here we present a facile method to synthesize highly controlled, ligand-free GeTe nanoparticles, an important PCM, with an average diameter under 10 nm. Subsequent crystallization by slow and ultrafast rates allows unravelling of the crystallization kinetics, demonstrating the breakdown of Arrhenius behavior for the crystallization rate and a fragile-to-strong transition in the viscosity as well as the overall crystal growth rate for the as-deposited GeTe nanoparticles. The obtained results pave the way for further development of phase-change memory based on GeTe with sub-lithographic sizes.

Inverting polar domains via electrical pulsing in metallic germanium telluride

Germanium telluride (GeTe) is both polar and metallic, an unusual combination of properties in any material system. The large concentration of free-carriers in GeTe precludes the coupling of external electric field with internal polarization, rendering it ineffective for conventional ferroelectric applications and polarization switching. Here we investigate alternate ways of coupling the polar domains in GeTe to external electrical stimuli through optical second harmonic generation polarimetry and in situ TEM electrical testing on single-crystalline GeTe nanowires. We show that anti-phase boundaries, created from current pulses (heat shocks), invert the polarization of selective domains resulting in reorganization of certain 71^o domain boundaries into 109^o boundaries. These boundaries subsequently interact and evolve with the partial dislocations, which migrate from domain to domain with the carrier-wind force (electrical current). This work suggests that current pulses and carrier-wind force could be external stimuli for domain engineering in ferroelectrics with significant current leakage.

Polar metals such as GeTe could store information using electric domains but the high conductivity screens electric fields, preventing the use of usual domain control techniques. Here, the authors demonstrate that polar domains in GeTe can be manipulated using electrically generated heat shocks.

GeTe: a simple compound blessed with a plethora of properties

A selection from the wide range of functional properties present in the binary compound, GeTe, are reviewed is this paper.

Size-dependent and tunable crystallization of GeSbTe phase-change nanoparticles

Chalcogenide-based nanostructured phase-change materials (PCMs) are considered promising building blocks for non-volatile memory due to their high write and read speeds, high data-storage density, and low power consumption. Top-down fabrication of PCM nanoparticles (NPs), however, often results in damage and deterioration of their useful properties. Gas-phase condensation based on magnetron sputtering offers an attractive and straightforward solution to continuously down-scale the PCMs into sub-lithographic sizes. Here we unprecedentedly present the size dependence of crystallization for Ge₂Sb₂Te₅ (GST) NPs, whose production is currently highly challenging for chemical synthesis or top-down fabrication. Both amorphous and crystalline NPs have been produced with excellent size and composition control with average diameters varying between 8 and 17 nm. The size-dependent crystallization of these NPs was carefully analyzed through in-situ heating in a transmission electron microscope, where the crystallization temperatures (T_c) decrease when the NPs become smaller. Moreover, methane incorporation has been observed as an effective method to enhance the amorphous phase stability of the NPs. This work therefore elucidates that GST NPs synthesized by gas-phase condensation with tailored properties are promising alternatives in designing phase-change memories constrained by optical lithography limitations.

Ordered Peierls distortion prevented at growth onset of GeTe ultra-thin films

Using reflection high-energy electron diffraction (RHEED), the growth onset of molecular beam epitaxy (MBE) deposited germanium telluride (GeTe) film on Si(111)-(√3 × √3)R30°-Sb surfaces is investigated, and a larger than expected in-plane lattice spacing is observed during the deposition of the first two molecular layers. High-resolution transmission electron microscopy (HRTEM) confirms that the growth proceeds via closed layers, and that those are stable after growth. The comparison of the experimental Raman spectra with theoretical calculated ones allows assessing the shift of the phonon modes for a quasi-free-standing ultra-thin GeTe layer with larger in-plane lattice spacing. The manifestation of the latter phenomenon is ascribed to the influence of the interface and the confinement of GeTe within the limited volume of material available at growth onset, either preventing the occurrence of Peierls dimerization or their ordered arrangement to occur normally.

Can low-valent germanium chemistry be practiced under ambient conditions? A tale of a water-stable yet reactive germylene monochloride complex

A germylene monochloride complex ((DPM)GeCl, 1) that is water stable was isolated for the first time. Interestingly, it reacts with cesium fluoride under ambient conditions (non-inert atmosphere and water-containing solvent) to afford water stable germylene monofluoride complex ((DPM)GeF, 2). Due to the usage of DPM (dipyrrinate) ligand, germylene monohalides 1 and 2 show fluorescence in the visible region at 555 and 538 nm, respectively. Compounds 1 and 2 are the first fluorescent germylene complexes and were characterized by multinuclear NMR spectroscopy. The structure of compound 1 was also proved by single crystal X-ray diffraction studies.

The stabilization of a single domain in free-standing ferroelectric nanocrystals

High resolution electron microscopy, electron diffraction and electron holography were used to study individual free-standing ∼ 30 nm barium titanate nanocrystals. Large unidirectional variations in the tetragonal distortion were mapped across the smaller nanocrystals, peaking to anomalously large values of up to 4% at the centers of the nanocrystals. This indicated that the nanocrystals consist of highly strained single ferroelectric domains. Simulations using an effective Hamiltonian for modeling a nanocrystal under a small depolarizing field and negative pressure qualitatively confirm this picture. These simulations, along with the development of a phenomenological model, show that the tetragonal distortion variation is a combined effect of: (i) electrostrictive coupling between the spontaneous polarization and strain inside the nanocrystal, and (ii) a surface-induced effective stress existing inside the nanodot. As a result, a 'strain skin layer', having a smaller tetragonal distortion relative to the core of the nanocrystal, is created.

Determination of polarization-fields across polytype interfaces in InAs nanopillars

Polarization fields within InAs nanopillars with zincblende(ZB)/wurtzite(WZ) polytype stacking are quantified. The displacement of charged ions inside individual tetrahedra of WZ regions is measured at the atomic scale. The variations of spontaneous polarization along the interface normal are related to strain at interfaces of different polytypes. Thus, direct correlation between local atomic structure and electric properties is demonstrated.

Magnetic-field-induced ferroelectric polarization reversal in the multiferroic Ge(1-x)Mn(x)Te semiconductor

Ge(1-x)Mn(x)Te is shown to be a multiferroic semiconductor, exhibiting both ferromagnetic and ferroelectric properties. By ferromagnetic resonance we demonstrate that both types of order are coupled to each other. As a result, magnetic-field-induced ferroelectric polarization reversal is achieved. Switching of the spontaneous electric dipole moment is monitored by changes in the magnetocrystalline anisotropy. This also reveals that the ferroelectric polarization reversal is accompanied by a reorientation of the hard and easy magnetization axes. By tuning the GeMnTe composition, the interplay between ferromagnetism and ferroelectricity can be controlled.

Controlling localized surface plasmon resonances in GeTe nanoparticles using an amorphous-to-crystalline phase transition

Infrared absorption measurements of amorphous and crystalline nanoparticles of GeTe reveal a localized surface plasmon resonance (LSPR) mode in the crystalline phase that is absent in the amorphous phase. The LSPR mode emerges upon crystallization of amorphous nanoparticles. The contrasting plasmonic properties are elucidated with scanning tunneling spectroscopy measurements indicating a Burstein-Moss shift of the band gap in the crystalline phase and a finite density of electronic states throughout the band gap in the amorphous phase that limits the effective free carrier density.

Monodisperse Sn nanocrystals as a platform for the study of mechanical damage during electrochemical reactions with Li

Monodisperse Sn spherical nanocrystals of 10.0 ± 0.2 nm were prepared in dispersible colloidal form. They were used as a model platform to study the impact of size on the accommodation of colossal volume changes during electrochemical lithiation using ex situ transmission electron microscopy (TEM). Significant mechanical damage was observed after full lithiation, indicating that even crystals at these very small dimensions are not sufficient to prevent particle pulverization that compromises electrode durability.

Effective Mass-Driven Structural Transition in a Mn-Doped ZnS Nanoplatelet

Mn doping in ZnS nanoplatelets has been shown to induce a structural transition from the wurtzite to the zinc blende phase. We trace the origin of this transition to quantum confinement effects, which shift the valence band maximum of the wurtzite and zinc blende polymorphs of ZnS at different rates as a function of the nanocrystal size, arising from different effective hole masses in the two structures. This modifies the covalency associated with Mn incorporation and is reflected in the size-dependent binding energy difference for the two structures.

Fast frequency sweeping in resonance-tracking SPM for high-resolution AFAM and PFM imaging

A new resonance-tracking (RT) method using fast frequency sweeping excitation was developed for quantitative scanning probe microscopy (SPM) imaging. This method allows quantitative imaging of elastic properties and ferroelectrical domains with nanoscale resolution at high data acquisition rates. It consists of a commercial AFM system combined with a high-frequency lock-in amplifier, a programmed function generator and a fast data acquisition card. The resonance-tracking method was applied to the atomic force acoustic microscopy (AFAM) and to the piezoresponse force microscopy (PFM) modes. Plots of amplitude versus time and phase versus time for resonant spectra working with different sweeping frequencies were obtained to evaluate the response speed of the lock-in amplifier. It was proved that this resonance-tracking method allows suitable spectral acquisition at a rate of about 5 ms/pixel, which is useful for SPM imaging in a practical scanning time. In order to demonstrate the system performance, images of RT-AFAM for TiN films and RT-PFM for GeTe are shown.

High thermoelectric and reversible p-n-p conduction type switching integrated in dimetal chalcogenide

The subject of the involved phase transition in solid materials has formed not only the basis of materials technology but also the central issue of solid-state chemistry for centuries. The ability to design and control the required changes in physical properties within phase transition becomes key prerequisite for the modern functionalized materials. Herein, we have experimentally achieved the high thermoelectric performance (ZT value reaches 1.5 at 700 K) and reversible p-n-p semiconducting switching integrated in a dimetal chalcogenide, AgBiSe(2) during the continuous hexagonal-rhombohedral-cubic phase transition. The clear-cut evidences in temperature-dependent positron annihilation and Raman spectra confirmed that the p-n-p switching is derived from the bimetal atoms exchange within phase transition, whereas the full disordering of bimetal atoms after the bimetal exchange results in the high thermoelectric performance. The combination of p-n-p switching and high thermoelectric performance enables the dimetal chalcogenides perfect candidates for novel multifunctional electronic devices. The discovery of bimetal atoms exchange during the phase transition brings novel phenomena with unusual properties which definitely enrich solid-state chemistry and materials science.

Nanoscale phase change memory materials

Phase change memory materials store information through their reversible transitions between crystalline and amorphous states. For typical metal chalcogenide compounds, their phase transition properties directly impact critical memory characteristics and the manipulation of these is a major focus in the field. Here, we discuss recent work that explores the tuning of such properties by scaling the materials to nanoscale dimensions, including fabrication and synthetic strategies used to produce nanoscale phase change memory materials. The trends that emerge are relevant to understanding how such memory technologies will function as they scale to ever smaller dimensions and also suggest new approaches to designing materials for phase change applications. Finally, the challenges and opportunities raised by integrating nanoscale phase change materials into switching devices are discussed.

Solution synthesis of ultrathin single-crystalline SnS nanoribbons for photodetectors via phase transition and surface processing

We report the solution-phase synthesis and surface processing of ~2-5 μm long single-crystalline IV-VI tin(II) sulfide (SnS) ultrathin nanoribbons, with thicknesses down to 10 nm, and their use in single nanoribbon based photodetectors. The SnS nanoribbons grow via a metastable-to-stable phase transition from zinc blende (ZB) nanospheres to orthorhombic nanoribbons; dual-phase intermediate heterostructures with zinc blende nanosphere heads and orthorhombic nanoribbon tails were observed. Exchange of long, insulating organic oleylamine ligands by short, inorganic HS(-) ligands converts the organic SnS nanoribbons into completely inorganic, hydrophilic structures. Field-effect transistor (FET) devices were made from single SnS nanoribbons, both before and after ligand exchange, which exhibit p-type semiconductor behavior. The SnS single nanoribbon based photodetector devices showed highly sensitive and rapid photocurrent responses to illumination by blue, green, and red light. The switching behavior of photocurrent generation and annihilation is complete within approximately 1 ms and exhibits high photoconductivity gains (up to 2.3 × 10(4)) and good stability. The ON/OFF ratio of the photodetector can be engineered to 80 (4 nA/50 pA) using a small drain current (10 mV) for the all inorganic SnS nanoribbons. This work paves the way for the colloidal growth of low-cost, environmentally benign, single-crystalline narrow band gap semiconductor nanostructures from abundant elements for applications in photodetectors and other nanoscale devices.

Ferroelectric order in individual nanometre-scale crystals

Ferroelectricity in finite-dimensional systems continues to arouse interest, motivated by predictions of vortex polarization states and the utility of ferroelectric nanomaterials in memory devices, actuators and other applications. Critical to these areas of research are the nanoscale polarization structure and scaling limit of ferroelectric order, which are determined here in individual nanocrystals comprising a single ferroelectric domain. Maps of ferroelectric structural distortions obtained from aberration-corrected transmission electron microscopy, combined with holographic polarization imaging, indicate the persistence of a linearly ordered and monodomain polarization state at nanometre dimensions. Room-temperature polarization switching is demonstrated down to ~5 nm dimensions. Ferroelectric coherence is facilitated in part by control of particle morphology, which along with electrostatic boundary conditions is found to determine the spatial extent of cooperative ferroelectric distortions. This work points the way to multi-Tbit/in(2) memories and provides a glimpse of the structural and electrical manifestations of ferroelectricity down to its ultimate limits.

Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis

Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semiconductor nanowires (NWs) from binary compounds in two extreme cases: (i) when the dumbbell is formed with atoms of similar mass (GaAs) and (ii) in the case where one of the atoms is extremely light (N or O: ZnO and GaN/AlN). The theoretical fundaments of these procedures allow us to overcome the main challenge in the identification of dumbbell polarity. It resides in the separation and identification of the constituent atoms in the dumbbells. The proposed experimental via opens new routes for the fine characterization of nanostructures, e.g., in electronic and optoelectronic fields, where the polarity is crucial for the understanding of their physical properties (optical and electronic) as well as their growth mechanisms.

Peierls distortion mediated reversible phase transition in GeTe under pressure

With the advent of big synchrotron facilities around the world, pressure is now routinely placed to design a new material or manipulate the properties of materials. In GeTe, an important phase-change material that utilizes the property contrast between the crystalline and amorphous states for data storage, we observed a reversible phase transition of rhombohedral ↔ rocksalt ↔ orthorhombic ↔ monoclinic coupled with a semiconductor ↔ metal interconversion under pressure on the basis of ab initio molecular dynamics simulations. This interesting reversible phase transition under pressure is believed to be mediated by Peierls distortion in GeTe. Our results suggest a unique way to understand the reversible phase transition and hence the resistance switching that is crucial to the applications of phase-change materials in nonvolatile memory. The present finding can also be expanded to other IV-VI semiconductors.

Spontaneous formation of wurzite-CdS/zinc blende-CdTe heterodimers through a partial anion exchange reaction

Ion exchange of ionic semiconductor nanoparticles (NPs) is a facile method for the synthesis of type-II semiconductor heterostructured NPs with staggered alignment of band edges for photoelectric applications. Through consideration of the crystallographic orientation and strain at the heterointerface, well-designed heterostructures can be constructed through ion exchange reactions. Here we report the selective synthesis of anisotropically phase-segregated cadmium sulfide (CdS)/ cadmium telluride (CdTe) heterodimers via a novel anion exchange reaction of CdS NPs with an organic telluride precursor. The wurtzite-CdS/zinc blende-CdTe heterodimers in this study resulted from spontaneous phase segregation induced by the differences in the crystal structures of the two phases, accompanying a centrosymmetry breaking of the spherical CdS NPs. The CdS/CdTe heterodimers exhibited photoinduced spatial charge separation because of their staggered band-edge alignment.