Magnetoelectric coupling in ordered arrays of multilayered heteroepitaxial BaTiO₃/CoFe₂O₄ nanodots

Robust multiferroicity and magnetic modulation of the ferroelectric imprint field in heterostructures comprising epitaxial Hf0.5Zr0.5O2 and Co

Magnetoelectric multiferroics, either single-phase or composites comprising ferroelectric/ferromagnetic coupled films, are promising candidates for energy efficient memory computing. However, most of the multiferroic magnetoelectric systems studied so far are based on materials that are not compatible with industrial processes. Doped hafnia is emerging as one of the few CMOS-compatible ferroelectric materials. Thus, it is highly relevant to study the integration of ferroelectric hafnia into multiferroic systems. In particular, ferroelectricity in hafnia, and the eventual magnetoelectric coupling when ferromagnetic layers are grown atop of it, are very much dependent on quality of interfaces. Since magnetic metals frequently exhibit noticeable reactivity when grown onto oxides, it is expected that ferroelectricity and magnetoelectricity might be reduced in multiferroic hafnia-based structures. In this article, we present excellent ferroelectric endurance and retention in epitaxial Hf0.5Zr0.5O2 films grown on buffered silicon using Co as the top electrode. The crucial influence of a thin Pt capping layer grown on top of Co on the ferroelectric functional characteristics is revealed by contrasting the utilization of Pt-capped Co, non-capped Co and Pt. Magnetic control of the imprint electric field (up to 40% modulation) is achieved in Pt-capped Co/Hf0.5Zr0.5O2 structures, although this does not lead to appreciable tuning of the ferroelectric polarization, as a result of its high stability. Computation of piezoelectric and flexoelectric strain-mediated mechanisms of the observed magnetoelectric coupling reveal that flexoelectric contributions are likely to be at the origin of the large imprint electric field variation.

CMOS-Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin

The development of data-intensive computing methods imposes a significant load on the hardware, requiring progress toward a memory-centric paradigm. Within this context, ternary content-addressable memory (TCAM) can become an essential platform for high-speed in-memory matching applications of large data vectors. Compared to traditional static random-access memory (SRAM) designs, TCAM technology using non-volatile resistive memories (RRAMs) in two-transistor-two-resistor (2T2R) configurations presents a cost-efficient alternative. However, the limited sensing margin between the match and mismatch states in RRAM structures hinders the potential of using memory-based TCAMs for large-scale architectures. Therefore, this study proposes a practical device engineering method to improve the switching response of conductive-bridge memories (CBRAMs) integrated with existing complementary metal-oxide-semiconductor (CMOS) transistor technology. Importantly, this work demonstrates a significant improvement in memory window reaching 1.87 × 107 by incorporating nanocavity arrays and modifying electrode geometry. Consequently, TCAM cells using nanocavity-enhanced CBRAM devices can exhibit a considerable increase in resistance ratio up to 6.17 × 105, thereby closely approximating the sensing metrics observed in SRAM-based TCAMs. The improved sensing capability facilitates the parallel querying of extensive data sets. TCAM array simulations using experimentally verified device models indicate a substantial sensing margin of 65× enabling a parallel search of 2048 bits.

Strain assisted magnetoelectric coupling in ordered nanomagnets of CoFe2O4/SrRuO3/(Pb(Mg1/3Nb2/3)O3-PbTiO3) heterostructures

We have explored the electric field controlled magnetization in the nanodot CoFe₂O₄/SrRuO₃/PMN-PT (CFO/SRO/PMN-PT) heterostructures. Ordered ferromagnetic CFO nanodots (∼300 nm lateral dimension) are developed on the PMN-PT substrate (ferroelectric as well as piezoelectric) using a nanostencil-mask pattering method during pulsed laser deposition. The nanostructures reveal electric field induced magnetization reversal in the single domain CFO nanodots through transfer of piezostrains from the piezoelectric PMN-PT substrate to the CFO. Further, electric field modulated spin structure of CFO nanomagnets is analyzed by using x-ray magnetic circular dichroism (XMCD). The XMCD analysis reveals cations (Fe³⁺/Co²⁺) redistribution on the octahedral and tetrahedral site in the electric field poled CFO nanodots, establishing the strain induced magneto-electric coupling effects. The CFO/SRO/PMN-PT nanodots structure demonstrate multilevel switching of ME coupling coefficient (α) by applying selective positive and negative electric fields in a non-volatile manner. The retention of two stable states ofαis illustrated for ∼10⁶seconds, which can be employed to store the digital data in non-volatile memory devices. Thus the voltage controlled magnetization in the nanodot structures leads a path towards the invention of energy efficient high-density memory devices.

Strain-Induced Magnetoelectric Coupling in Fe3O4/BaTiO3 Nanopillar Composites

Magnetoelectric coupling properties are limited to the substrate clamping effect in traditional ferroelectric/ferromagnetic heterostructures. Here, Fe₃O₄/BaTiO₃ nanopillar composites are successfully constructed. The well-ordered BaTiO₃ nanopillar arrays are prepared through template-assisted pulsed laser deposition. The Fe₃O₄ layer is coated on BaTiO₃ nanopillar arrays by atomic layer deposition. The nanopillar arrays and heterostructure are confirmed by scanning electron microscopy and transmission electron microscopy. A large thermally driven magnetoelectric coupling coefficient of 395 Oe °C^-1 near the phase transition of BaTiO₃ (orthorhombic to rhombohedral) is obtained, indicating a strong strain-induced magnetoelectric coupling effect. The enhanced magnetoelectric coupling effect originated from the reduced substrate clamping effect and increased the interface area in nanopillar structures. This work opens a door toward cutting-edge potential applications in spintronic devices.

ABO3 multiferroic perovskite materials for memristive memory and neuromorphic computing

The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics of ABO₃ multiferroic perovskite materials make them promising candidates for application in multifunctional nanoelectronic devices. Reversible ferroelectric polarization, controllable defect concentration and domain wall movement originated from the ABO₃ multiferroic perovskite materials promotes its memristive effect, which further highlights data storage, information processing and neuromorphic computing in diverse artificial intelligence applications. In particular, ion doping, electrode selection, and interface modulation have been demonstrated in ABO₃-based memristive devices for ultrahigh data storage, ultrafast information processing, and efficient neuromorphic computing. These approaches presented today including controlling the dopant in the active layer, altering the oxygen vacancy distribution, modulating the diffusion depth of ions, and constructing the interface-dependent band structure were believed to be efficient methods for obtaining unique resistive switching (RS) behavior for various applications. In this review, internal physical dynamics, preparation technologies, and modulation methods are systemically examined as well as the progress, challenges, and possible solutions are proposed for next generation emerging ABO₃-based memristive application in artificial intelligence.

Topological domain states and magnetoelectric properties in multiferroic nanostructures

Multiferroic nanostructures have been attracting tremendous attention over the past decade, due to their rich cross-coupling effects and prospective electronic applications. In particular, the emergence of some exotic phenomena in size-confined multiferroic systems, including topological domain states such as vortices, center domains, and skyrmion bubble domains, has opened a new avenue to a number of intriguing physical properties and functionalities, and thus underpins a wide range of applications in future nanoelectronic devices. It is also highly appreciated that nano-domain engineering provides a pathway to control the magnetoelectric properties, which is promising for future energy-efficient spintronic devices. In recent years, this field, still in its infancy, has witnessed a rapid development and a number of challenges too. In this article, we shall review the recent advances in the emergent domain-related exotic phenomena in multiferroic nanostructures. Specific attention is paid to the topological domain structures and related novel physical behaviors as well as the electric-field-driven magnetic switching via domain engineering. This review will end with a discussion of future challenges and potential directions.

Anisotropy of Percolation Threshold of BaTiO3-Ni0.5Zn0.5Fe2O4 Composite Films

A systematic study on the magnetic and electrical percolation phenomena of BaTiO₃ (BTO)-NiZnF₂O₄ (NZFO) composite films is presented in this work with the purpose of simplifying the preparation process of high-performance 1–3-type multiferroic composite films. Results show that the percolation threshold of the composite films depends on the macroscopic dimension of the material. The low-dimensional nature of the composite films results in different percolation thresholds with topological transition in vertical and horizontal directions. BTO-NZFO composite films with a grain size of 15 nm and a thickness of 100 nm exhibited a percolation threshold of 0.18 in the normal direction and a percolation threshold of 0.48 in the horizontal direction. In light of this intriguing feature, a novel multiferroic composite film with 1–3 structure and strong magnetoelectric coupling was easily prepared by a 0–3 process via controlling the NZFO content in the region between two percolation thresholds.

Magnetoelectric coupling tailored by the orientation of the nanocrystals in only one component in percolative multiferroic composites

Strong magnetoelectric coupling is realized in BaTiO₃–Ni_0.5Zn_0.5Fe₂O₄ multiferroic composite thin films by tailoring the orientation of ferrite nanocrystals.

Thermal Driven Giant Spin Dynamics at Three-Dimensional Heteroepitaxial Interface in Ni0.5Zn0.5Fe2O4/BaTiO3-Pillar Nanocomposites

Traditional magnetostrictive/piezoelectric laminated composites rely on the two-dimensional interface that transfers stress/strain to achieve the large magnetoelectric (ME) coupling, nevertheless, they suffer from the theoretical limitation of the strain effect and of the substrate clamping effect in real ME applications. In this work, 3D NZFO/BTO-pillar nanocomposite films were grown on SrTiO₃ by template-assisted pulsed laser deposition, where BaTiO₃ (BTO) nanopillars appeared in an array with distinct phase transitions as the cores were covered by NiZn ferrite (NZFO) layer. The perfect 3D heteroepitaxial interface between BTO and NZFO phases can be identified without any edge dislocations, which allows effective strain transfer at the 3D interface. The 3D structure nanocomposites enable the strong two magnon scattering (TMS) effect that enhances ME coupling at the interface and reduces the clamping effect by strain relaxation. Thereby, a large FMR field shift of 1866 Oe in NZFO/BTO-pillar nanocomposite was obtained at the TMS critical angle near the BTO nanopillars phase transition of 255 K.

Characteristics and controllability of vortices in ferromagnetics, ferroelectrics, and multiferroics

Topological defects in condensed matter are attracting e significant attention due to their important role in phase transition and their fascinating characteristics. Among the various types of matter, ferroics which possess a switchable physical characteristic and form domain structure are ideal systems to form topological defects. In particular, a special class of topological defects-vortices-have been found to commonly exist in ferroics. They often manifest themselves as singular regions where domains merge in large systems, or stabilize as novel order states instead of forming domain structures in small enough systems. Understanding the characteristics and controllability of vortices in ferroics can provide us with deeper insight into the phase transition of condensed matter and also exciting opportunities in designing novel functional devices such as nano-memories, sensors, and transducers based on topological defects. In this review, we summarize the recent experimental and theoretical progress in ferroic vortices, with emphasis on those spin/dipole vortices formed in nanoscale ferromagnetics and ferroelectrics, and those structural domain vortices formed in multiferroic hexagonal manganites. We begin with an overview of this field. The fundamental concepts of ferroic vortices, followed by the theoretical simulation and experimental methods to explore ferroic vortices, are then introduced. The various characteristics of vortices (e.g. formation mechanisms, static/dynamic features, and electronic properties) and their controllability (e.g. by size, geometry, external thermal, electrical, magnetic, or mechanical fields) in ferromagnetics, ferroelectrics, and multiferroics are discussed in detail in individual sections. Finally, we conclude this review with an outlook on this rapidly developing field.

Nanoparticle-Based Magnetoelectric BaTiO3-CoFe2O4 Thin Film Heterostructures for Voltage Control of Magnetism

Multiferroic composite materials combining ferroelectric and ferromagnetic order at room temperature have great potential for emerging applications such as four-state memories, magnetoelectric sensors, and microwave devices. In this paper, we report an effective and facile liquid phase deposition route to create multiferroic composite thin films involving the spin-coating of nanoparticle dispersions of BaTiO₃, a well-known ferroelectric, and CoFe₂O₄, a highly magnetostrictive material. This approach offers great flexibility in terms of accessible film configurations (co-dispersed as well as layered films), thicknesses (from 100 nm to several μm) and composition (5-50 wt % CoFe₂O₄ with respect to BaTiO₃) to address various potential applications. A detailed structural characterization proves that BaTiO₃ and CoFe₂O₄ remain phase-separated with clear interfaces on the nanoscale after heat treatment, while electrical and magnetic studies indicate the simultaneous presence of both ferroelectric and ferromagnetic order. Furthermore, coupling between these orders within the films is demonstrated with voltage control of the magnetism at ambient temperatures.

Magnetoelectric Coupling in Well-Ordered Epitaxial BiFeO3/CoFe2O4/SrRuO3 Heterostructured Nanodot Array

Multiferroic magnetoelectric (ME) composites exhibit sizable ME coupling at room temperature, promising applications in a wide range of novel devices. For high density integrated devices, it is indispensable to achieve a well-ordered nanostructured array with reasonable ME coupling. For this purpose, we explored the well-ordered array of isolated epitaxial BiFeO3/CoFe2O4/SrRuO3 heterostructured nanodots fabricated by nanoporous anodic alumina (AAO) template method. The arrayed heterostructured nanodots demonstrate well-established epitaxial structures and coexistence of piezoelectric and ferromagnetic properties, as revealed by transmission electron microscopy (TEM) and peizoeresponse/magnetic force microscopy (PFM/MFM). It was found that the heterostructured nanodots yield apparent ME coupling, likely due to the effective transfer of interface couplings along with the substantial release of substrate clamping. A noticeable change in piezoelectric response of the nanodots can be triggered by magnetic field, indicating a substantial enhancement of ME coupling. Moreover, an electric field induced magnetization switching in these nanodots can be observed, showing a large reverse ME effect. These results offer good opportunities of the nanodots for applications in high-density ME devices, e.g., high density recording (>100 Gbit/in.(2)) or logic devices.

Direct Observation of Magnetic Field Induced Ferroelectric Domain Evolution in Self-Assembled Quasi (0-3) BiFeO3-CoFe2O4 Thin Films

Strain-mediated magnetoelectric (ME) coupling effect is expected in self-assembly heterostructures engineered by ferroelectric and ferromagnetic materials, contributing to the enhanced overall magnetoelectric effect. Microstructures as well as the connectivity configuration are considered to play a significant role in achieving efficient magnetoelectric properties. Different from the conventional (1-3) and (2-2) type composite films, we fabricate BiFeO3-CoFe2O4 (BFO-CFO) composite thin films with a novel quasi (0-3) type connectivity via a dual-target pulsed laser deposition process. The self-assembly growth mechanism has been studied, which demonstrates that the perovskite (BFO) matrix segments the connectivity of spinel (CFO) resulting in a quasi (0-3) composite. Direct observation of ferroelectric domain wall motion under external magnetic fields proves a strong magnetoelectric coupling effect in these (0-3) thin films. Our preliminary findings reveal the promising application potential of this new structure as multiferroic domain wall devices.

One-Step Mask Etching Strategy Toward Ordered Ferroelectric Pb(Zr0.52Ti 0.48)O 3 Nanodot Arrays

In this report, ordered lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanodot arrays were fabricated by an original one-step mask etching route. The one-step mask etching strategy is based on the patterned nanostructure of barrier layer (BL) at the bottom of anodic aluminum oxide (AAO), by a direct transfer of the nanopattern from BL to the pre-deposited PZT film, without introduction of any sacrifice layer and lithography. Therefore, the presented strategy is relatively simple and economical. X-ray diffraction and Raman analysis revealed that the as-prepared PZT was in a perovskite phase. Atomic and piezoresponse force microscopy indicated that the PZT nanodot arrays were with both good ordering and well-defined ferroelectric properties. Considering its universality on diverse substrates, the present method is a general approach to the high-quality ordered ferroelectric nanodot arrays, which is promising for applications in ultra-high density nonvolatile ferroelectric random access memories (NV-FRAM).

In-plane tunnelling field-effect transistor integrated on Silicon

Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. On the other hand, there has been a numerous demonstrations of the so-called magnetoelectric effect (coupling between ferroelectric and ferromagnetic order) using nearly-perfect heterostructures. However, the scrutiny of the ingredients that lead to magnetoelectric coupling, namely magnetic moment and a conducting channel, does not necessarily require structural perfection. In this work, we circumvent the stringent requirements for epilayers while preserving the magnetoelectric functionality in a silicon-integrated device. Additionally, we have identified an in-plane tunnelling mechanism which responds to a vertical electric field. This genuine electroresistance effect is distinct from known resistive-switching or tunnel electro resistance.

X-ray absorption spectroscopy on magnetic nanoscale systems for modern applications

X-ray absorption spectroscopy facilitated by state-of-the-art synchrotron radiation technology is presented as a powerful tool to study nanoscale systems, in particular revealing their static element-specific magnetic and electronic properties on a microscopic level. A survey is given on the properties of nanoparticles, nanocomposites and thin films covering a broad range of possible applications. It ranges from the ageing effects of iron oxide nanoparticles in dispersion for biomedical applications to the characterisation on a microscopic level of nanoscale systems for data storage devices. In this respect, new concepts for electrically addressable magnetic data storage devices are highlighted by characterising the coupling in a BaTiO(3)/CoFe(2)O(4) nanocomposite as prototypical model system. But classical magnetically addressable devices are also discussed on the basis of tailoring the magnetic properties of self-assembled ensembles of FePt nanoparticles for data storage and the high-moment material Fe/Cr/Gd for write heads. For the latter cases, the importance is emphasised of combining experimental approaches in x-ray absorption spectroscopy with density functional theory to gain a more fundamental understanding.

Highly ordered core–shell CoFe2O4–BiFeO3 nanocomposite arrays from dimension confined phase separation and their interfacial magnetoelectric coupling properties

With dimension confinement, highly ordered core–shell CoFe₂O₄–BiFeO₃ nanocomposite arrays were obtained from the self-assembly phase separation.

Structural evolution from Bi4.2K0.8Fe2O9+δ nanobelts to BiFeO3 nanochains in vacuum and their multiferroic properties

In this paper, we report the structural evolution of Bi(4.2)K(0.8)Fe(2)O(9+δ) nanobelts to BiFeO3 nanochains and the related variations in multiferroic properties. By using in situ transmission electron microscopy with comprehensive characterization, it was found that the layered perovskite multiferroic Bi(4.2)K(0.8)Fe(2)O(9+δ) nanobelts were very unstable in a vacuum environment, with Bi being easily removed. Based on this finding, a simple vacuum annealing method was designed which successfully transformed the Bi(4.2)K(0.8)Fe(2)O(9+δ) nanobelts into one-dimensional BiFeO(3) nanochains. Both the Bi(4.2)K(0.8)Fe(2)O(9+δ) nanobelts and the BiFeO3 nanochains showed multiferroic behavior, with their ferroelectric and ferromagnetic properties clearly established by piezoresponse and magnetic measurements, respectively. Interestingly, the BiFeO(3) nanochains had a larger magnetization than the Bi(4.2)K(0.8)Fe(2)O(9+δ) nanobelts. Moreover, the BiFeO(3) nanochains exhibited a surprisingly large exchange bias with small training effects. This one-dimensional BiFeO(3) multiferroic nanostructure characterized by a relatively stable exchange bias offers important functionalities that may be attractive for device applications.

Tailored surfaces of perovskite oxide substrates for conducted growth of thin films

Overview of strategies for chemical termination control in perovskite single crystals and their use for the smart fabrication of functional nanostructures.

Magneto-electric/dielectric and fluorescence effects in multiferroic xBaTiO3–(1 − x)ZnFe2O4 nanostructures

Magneto-electric/dielectric and photoemission of BTZF composites depends upon shape, size, surface spin, distortion, epitaxial strain etc. of nanostructure

The direct magnetoelectric effect in ferroelectric-ferromagnetic epitaxial heterostructures

Ferroelectric (FE) and ferromagnetic (FM) materials engineered in horizontal heterostructures allow interface-mediated magnetoelectric coupling. The so-called converse magnetoelectric effect (CME) has been already demonstrated by electric-field poling of the ferroelectric layers and subsequent modification of the magnetic state of adjacent ferromagnetic layers by strain effects and/or free-carrier density tuning. Here we focus on the direct magnetoelectric effect (DME) where the dielectric state of a ferroelectric thin film is modified by a magnetic field. Ferroelectric BaTiO3 (BTO) and ferromagnetic CoFe2O4 (CFO) oxide thin films have been used to create epitaxial FE/FM and FM/FE heterostructures on SrTiO3(001) substrates buffered with metallic SrRuO3. It will be shown that large ferroelectric polarization and DME can be obtained by appropriate selection of the stacking order of the FE and FM films and their relative thicknesses. The dielectric permittivity, at the structural transitions of BTO, is strongly modified (up to 36%) when measurements are performed under a magnetic field. Due to the insulating nature of the ferromagnetic layer and the concomitant absence of the electric-field effect, the observed DME effect solely results from the magnetostrictive response of CFO elastically coupled to the BTO layer. These findings show that appropriate architecture and materials selection allow overcoming substrate-induced clamping in multiferroic multi-layered films.

Highly ordered Pb(Zr₀.₅₂ Ti₀.₄₈)O₃ piezoelectric nanorod arrays

One-dimensional (1D) piezoelectric nanostructures have attracted significant attention for a broad range of applications including optoelectronics, thermoelectrics, electrochemical and electromechanical converters. We demonstrate the synthesis of 1D nanostructures based upon Pb(Zr0.52Ti0.48)O3 (PZT) on conductive substrates via sol-gel template synthesis. The vertically aligned PZT nanostructures with heights around one micron were synthesized by vacuum infiltration of sol-gel precursors into highly ordered cylindrical pores of anodized aluminum oxide templates. The 1D nanostructures were developed on large scale platinized silicon wafers and exhibited dense rod-like structure with a uniform diameter of 90 nm and an aspect ratio of 10. Scanning probe microscopy conducted on individual nanorods demonstrated good electromechanical properties with a high piezoelectric magnitude of 41 pm V(-1). We believe that this study opens the possibility of developing high performance nanoscale piezoelectric sensors and transducers.

Chemical solution deposition of epitaxial metal-oxide nanocomposite thin films

Epitaixial metal-oxide nanocomposite films, which possess interesting multifunctionality, have found applications in a wide range of devices. However, such films are typically produced by using high-vacuum equipment, like pulse-laser deposition, molecular-beam epitaxy, and chemical vapor deposition. As an alternative approach, chemical solution methods are not only cost-effective but also offer several advantages, including large surface coating, good control over stoichiometry, and the possible use of dopants. Therefore, in this Personal Account, we review the chemistry behind several of the main solution-based approaches, that is, sol-gel techniques, metal-organic decomposition, chelation, polymer-assisted deposition, and hydrothermal methods, including the seminal works that have been reported so far, to demonstrate the advantages and disadvantages of these different routes.

Directed self-assembly of epitaxial CoFe2O(4)-BiFeO3 multiferroic nanocomposites

CoFe(2)O(4) (CFO)-BiFeO(3) (BFO) nanocomposites are an intriguing option for future memory and logic technologies due to the magnetoelectric properties of the system. However, these nanocomposites form with CFO pillars randomly located within a BFO matrix, making implementation in devices difficult. To overcome this, we present a technique to produce patterned nanocomposites through self-assembly. CFO islands are patterned on Nb-doped SrTiO(3) to direct the self-assembly of epitaxial CFO-BFO nanocomposites, producing square arrays of CFO pillars.