Self-assembly-induced formation of high-density silicon oxide memristor nanostructures on graphene and metal electrodes

Graphene-based RRAM devices for neural computing

Resistive random access memory is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to build highly accurate crossbar arrays. Traditional RRAM designs make use of various filament-based oxide materials for creating a channel that is sandwiched between two electrodes to form a two-terminal structure. They are often subjected to mechanical and electrical stress over repeated read-and-write cycles. The behavior of these devices often varies in practice across wafer arrays over these stresses when fabricated. The use of emerging 2D materials is explored to improve electrical endurance, long retention time, high switching speed, and fewer power losses. This study provides an in-depth exploration of neuro-memristive computing and its potential applications, focusing specifically on the utilization of graphene and 2D materials in RRAM for neural computing. The study presents a comprehensive analysis of the structural and design aspects of graphene-based RRAM, along with a thorough examination of commercially available RRAM models and their fabrication techniques. Furthermore, the study investigates the diverse range of applications that can benefit from graphene-based RRAM devices.

Direct Printing of Ultrathin Block Copolymer Film with Nano-in-Micro Pattern Structures

Nanotransfer printing (nTP) is one of the most promising nanopatterning methods given that it can be used to produce nano-to-micro patterns effectively with functionalities for electronic device applications. However, the nTP process is hindered by several critical obstacles, such as sub-20 nm mold technology, reliable large-area replication, and uniform transfer-printing of functional materials. Here, for the first time, a dual nanopatterning process is demonstrated that creates periodic sub-20 nm structures on the eight-inch wafer by the transfer-printing of patterned ultra-thin (<50 nm) block copolymer (BCP) film onto desired substrates. This study shows how to transfer self-assembled BCP patterns from the Si mold onto rigid and/or flexible substrates through a nanopatterning method of thermally assisted nTP (T-nTP) and directed self-assembly (DSA) of Si-containing BCPs. In particular, the successful microscale patternization of well-ordered sub-20 nm SiOx patterns is systematically presented by controlling the self-assembly conditions of BCP and printing temperature. In addition, various complex pattern geometries of nano-in-micro structures are displayed over a large patterning area by T-nTP, such as angular line, wave line, ring, dot-in-hole, and dot-in-honeycomb structures. This advanced BCP-replicated nanopatterning technology is expected to be widely applicable to nanofabrication of nano-to-micro electronic devices with complex circuits.

Chemical Influence of Carbon Interface Layers in Metal/Oxide Resistive Switches

Thin layers introduced between a metal electrode and a solid electrolyte can significantly alter the transport of mass and charge at the interfaces and influence the rate of electrode reactions. C films embedded in functional materials can change the chemical properties of the host, thereby altering the functionality of the whole device. Using X-ray spectroscopies, here we demonstrate that the chemical and electronic structures in a representative redox-based resistive switching (RS) system, Ta₂O₅/Ta, can be tuned by inserting a graphene or ultrathin amorphous C layer. The results of the orbitalwise analyses of synchrotron Ta L₃-edge, C K-edge, and O K-edge X-ray absorption spectroscopy showed that the C layers between Ta₂O₅ and Ta are significantly oxidized to form CO_x and, at the same time, oxidize the Ta layers with different degrees of oxidation depending on the distance: full oxidation at the nearest 5 nm Ta and partial oxidation in the next 15 nm Ta. The depth-resolved information on the electronic structure for each layer further revealed a significant modification of the band alignments due to C insertion. Full oxidation of the Ta metal near the C interlayer suggests that the oxygen-vacancy-related valence change memory mechanism for the RS can be suppressed, thereby changing the RS functionalities fundamentally. The knowledge on the origin of C-enhanced surfaces can be applied to other metal/oxide interfaces and used for the advanced design of memristive devices.

A review of memristor: material and structure design, device performance, applications and prospects

With the booming growth of artificial intelligence (AI), the traditional von Neumann computing architecture based on complementary metal oxide semiconductor devices are facing memory wall and power wall. Memristor based in-memory computing can potentially overcome the current bottleneck of computer and achieve hardware breakthrough. In this review, the recent progress of memory devices in material and structure design, device performance and applications are summarized. Various resistive switching materials, including electrodes, binary oxides, perovskites, organics, and two-dimensional materials, are presented and their role in the memristor are discussed. Subsequently, the construction of shaped electrodes, the design of functional layer and other factors influencing the device performance are analyzed. We focus on the modulation of the resistances and the effective methods to enhance the performance. Furthermore, synaptic plasticity, optical-electrical properties, the fashionable applications in logic operation and analog calculation are introduced. Finally, some critical issues such as the resistive switching mechanism, multi-sensory fusion, system-level optimization are discussed.

Fabrication of Nanodevices Through Block Copolymer Self-Assembly

Block copolymer (BCP) self-assembly, as a novel bottom-up patterning technique, has received increasing attention in the manufacture of nanodevices because of its significant advantages of high resolution, high throughput, low cost, and simple processing. BCP self-assembly provides a very powerful approach to constructing diverse nanoscale templates and patterns that meet large-scale manufacturing practices. For the past 20 years, the self-assembly of BCPs has been extensively employed to produce a range of nanodevices, such as nonvolatile memory, bit-patterned media (BPM), fin field-effect transistors (FinFETs), photonic nanodevices, solar cells, biological and chemical sensors, and ultrafiltration membranes, providing a variety of configurations for high-density integration and cost-efficient manufacturing. In this review, we summarize the recent progress in the fabrication of nanodevices using the templates of BCP self-assembly, and present current challenges and future opportunities.

Switching-Modulated Phase Change Memory Realized by Si-Containing Block Copolymers

The phase change memory (PCM) is one of the key enabling memory technologies for next-generation non-volatile memory device applications due to its high writing speed, excellent endurance, long retention time, and good scalability. However, the high power consumption of PCM devices caused by the high switching current from a high resistive state to a low resistive state is a critical obstacle to be resolved before widespread commercialization can be realized. Here, a useful approach to reduce the writing current of PCM, which depends strongly on the contact area between the heater electrode and active layer, by employing self-assembly process of Si-containing block copolymers (BCPs) is presented. Self-assembled insulative BCP pattern geometries can locally block the current path of the contact between a high resistive film (TiN) and a phase-change material (Ge₂ Sb₂ Te₅ ), resulting in a significant reduction of the writing current. Compared to a conventional PCM cell, the BCP-modified PCM shows excellent switching power reduction up to 1/20 given its use of self-assembled hybrid SiFe_x O_y /SiO_x dot-in-hole nanostructures. This BCP-based bottom-up process can be extended to various applications of other non-volatile memory devices, such as resistive switching memory and magnetic storage devices.

Extreme-Pressure Imprint Lithography for Heat and Ultraviolet-Free Direct Patterning of Rigid Nanoscale Features

Nanoimprint lithography (NIL) is typically performed by filling up of molds by heated polymers or UV-curable liquid resists, inevitably requiring subsequent pattern-transfer processes. Although direct NIL techniques have been suggested alternatively, they usually require precursors or ink-type resists containing undesired organic components. Here, we demonstrate extreme-pressure imprint lithography (EPIL) that effectively produces well-defined multiscale structures with a wide range from 10 nm to 10 mm on diverse surfaces even including pure or alloy metals without using any precursors, heating, UV exposure, or pattern transfer. In particular, EPIL is accomplished through precise control of room-temperature plastic deformation in nanoscale volumes, which is elucidated by finite element analyses and molecular dynamics simulations. In addition to scalability to macroscopic areas, we confirm the outstanding versatility of EPIL via its successful applications to Ni, Cu, steel, and organics. We expect that the state-of-the-art EPIL process combined with other emerging nanopatterning technologies will be extendable to the future large-area nanofabrication of various devices.

Optical switch with ultra high extinction ratio using electrically controlled metal diffusion

An optical switch with ultra high extinction ratio is proposed. Optical switching is realized using the resistive switching effect through the lateral coupling between the input nanophotonic waveguide and output waveguide at a wavelength of 1550 nm. The coupled waveguide system is engineered to increase the number of mode beats in a unit length of the device. An increase in the number of mode beats and controlled diffusion of metal ions through a thin dielectric layer with an applied electric field is responsible for a high optical extinction ratio of 27 dB for a 20 µm long device. Compared to electrical control by plasma dispersion in silicon, the resistive switching effect enables a reduction in the coupling length and an increase in the waveguide absorption, leading to an almost 100 times higher extinction ratio. The proposed compact on-chip silicon-based nanophotonic resistive device is a potential candidate for a large-scale integrated photonic circuit for applications in optical switching, modulation, memory, and computation.

Thermally assisted nanotransfer printing with sub-20-nm resolution and 8-inch wafer scalability

Nanotransfer printing (nTP) has attracted considerable attention due to its good pattern resolution, process simplicity, and cost-effectiveness. However, the development of a large-area nTP process has been hampered by critical reliability issues related to the uniform replication and regular transfer printing of functional nanomaterials. Here, we present a very practical thermally assisted nanotransfer printing (T-nTP) process that can easily produce well-ordered nanostructures on an 8-inch wafer via the use of a heat-rolling press system that provides both uniform pressure and heat. We also demonstrate various complex pattern geometries, such as wave, square, nut, zigzag, and elliptical nanostructures, on diverse substrates via T-nTP. Furthermore, we demonstrate how to obtain a high-density crossbar metal-insulator-metal memristive array using a combined method of T-nTP and directed self-assembly. We expect that the state-of-the-art T-nTP process presented here combined with other emerging patterning techniques will be especially useful for the large-area nanofabrication of various devices.

Decade of 2D-materials-based RRAM devices: a review

Two dimensional (2D) materials have offered unique electrical, chemical, mechanical and physical properties over the past decade owing to their ultrathin, flexible, and multilayer structure. These layered materials are being used in numerous electronic devices for various applications, and this review will specifically focus on the resistive random access memories (RRAMs) based on 2D materials and their nanocomposites. This study presents the device structures, conduction mechanisms, resistive switching properties, fabrication technologies, challenges and future aspects of 2D-materials-based RRAMs. Graphene, derivatives of graphene and MoS2 have been the major contributors among 2D materials for the application of RRAMs; however, other members of this family such as hBN, MoSe2, WS2 and WSe2 have also been inspected more recently as the functional materials of nonvolatile RRAM devices. Conduction in these devices is usually dominated by either the penetration of metallic ions or migration of intrinsic species. Most prominent advantages offered by RRAM devices based on 2D materials include fast switching speed (<10 ns), less power losses (10 pJ), lower threshold voltage (<1 V) long retention time (>10 years), high electrical endurance (>108 voltage cycles) and extended mechanical robustness (500 bending cycles). Resistive switching properties of 2D materials have been further enhanced by blending them with metallic nanoparticles, organic polymers and inorganic semiconductors in various forms.

Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device

In this study, by inserting a buffer layer of TiO_x between the SiO_x:Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiO_x:Ag/TiO_x/p⁺⁺-Si by a physical vapor deposition process, in which the filament growth and rupture can be efficiently controlled during analog switching. The synaptic characteristics of the memristor device with a wide range of resistance change for weight modulation by implementing positive or negative pulse trains have been investigated extensively. Several learning and memory functions have been achieved simultaneously, including potentiation/depression, paired-pulse-facilitation (PPF), short-term plasticity (STP), and STP-to-LTP (long-term plasticity) transition controlled by repeating pulses more than a rehearsal operation, and spike-time-dependent-plasticity (STDP) as well. Based on the analysis of logarithmic I-V characteristics, it has been found that the controlled evolution/dissolution of conductive Ag-filaments across the dielectric layers can improve the performance of the testing memristor device.

Pattern formation of metal-oxide hybrid nanostructures via the self-assembly of di-block copolymer blends

The templated self-assembly of block copolymers (BCPs) with a high Flory-Huggins interaction parameter (χ) can effectively create ultrafine, well-ordered nanostructures in the range of 5-30 nm. However, the self-assembled BCP patterns remain limited to possible morphological geometries and materials. Here, we introduce a novel and useful self-assembly method of di-BCP blends capable of generating diverse hybrid nanostructures consisting of oxide and metal materials through the rapid microphase separation of A-B/B-C BCP blends. We successfully obtained various hybridized BCP morphologies which cannot be acquired from a single di-BCP, such as hexagonally arranged hybrid dot and dot-in-hole patterns by controlling the mixing ratios of the solvents with a binary solvent annealing process. Furthermore, we demonstrate how the binary solvent vapor annealing process can provide a wide range of pattern geometries to di-BCP blends, showing a well-defined spontaneous one-to-one accommodation in dot-in-hole nanostructures. Specifically, we show clearly how the self-assembled BCPs can be functionalized via selective reduction and/or an oxidation process, resulting in the excellent positioning of confined silica nanodots into each nanospace of a Pt mesh. These results suggest a new method to achieve the pattern formation of more diverse and complex hybrid nanostructures using various blended BCPs.

Hierarchical multi-level block copolymer patterns by multiple self-assembly

Uniform, well-ordered sub-20 nm patterns can be generated by the templated self-assembly of block copolymers (BCPs) with a high Flory-Huggins interaction parameter (χ). However, the self-assembled BCP monolayers remain limited in the possible structural geometries. Here, we introduce a multiple self-assembly method which uses di-BCPs to produce diverse morphologies, such as dot, dot-in-honeycomb, line-on-dot, double-dot, pondering, dot-in-pondering, and line-on-pondering patterns. To improve the diversity of BCP morphological structures, we employed sphere-forming and cylinder-forming poly(styrene-block-dimethylsiloxane) (PS-b-PDMS) BCPs with a high χ. The self-assembled mono-layer and double-layer SiOx dot patterns were modified at a high temperature (∼800 °C), showing hexagonally arranged (dot) and double-hexagonally arranged (pondering) SiOx patterns, respectively. We successfully obtained additional new nanostructures (big-dot, dot-in-honeycomb, line-on-dot, pondering, dot-in-pondering, and line-on-pondering types) through a second self-assembly of cylinder-forming BCPs using the dot and pondering patterns as guiding templates. This simple approach can likely be extended to the multiple self-assembly of many other BCPs with good functionality, significantly contributing to the development of various nanodevices.

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials

Reversible chemical and structural changes induced by ionic motion and reaction in response to electrical stimuli leads to resistive switching effects in metal-insulator-metal structures. Filamentary switching based on the formation and rupture of nanoscale conductive filament has been applied in non-volatile memory and volatile selector devices with low power consumption and fast switching speeds. Before the mass production of resistive switching devices, great efforts are still required to enable stable and reliable switching performances. The conductive filament, a bridge of microscopic metal-insulator-metal structure and macroscopic resistance states, plays an irreplaceable part in resistive switching behavior, as unreliable performance often originates from unstable filament behavior. In this Review, departing from the filamentary switching mechanism and the existing issues, recent advances of the switching performance improvement through the conductive filament modulation are discussed, in the sequence of material modulation, device structure design and switching operation scheme optimization. In particular, two-dimensional (2D) nanomaterials with excellent properties including and beyond graphene, are discussed with emphasis on performance improvement by their active roles as the switching layer, insertion layer, thin electrode, patterned electrode, and edge electrode, etc.

Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application

Block copolymers (BCPs) and their directed self-assembly (DSA) has emerged as a realizable complementary tool to aid optical patterning of device elements for future integrated circuit advancements. Methods to enhance BCP etch contrast for DSA application and further potential applications of inorganic nanomaterial features (e.g., semiconductor, dielectric, metal and metal oxide) are examined. Strategies to modify, infiltrate and controllably deposit inorganic materials by utilizing neat self-assembled BCP thin films open a rich design space to fabricate functional features in the nanoscale regime. An understanding and overview on innovative ways for the selective inclusion/infiltration or deposition of inorganic moieties in microphase separated BCP nanopatterns is provided. Early initial inclusion methods in the field and exciting contemporary reports to further augment etch contrast in BCPs for pattern transfer application are described. Specifically, the use of evaporation and sputtering methods, atomic layer deposition, sequential infiltration synthesis, metal-salt inclusion and aqueous metal reduction methodologies forming isolated nanofeatures are highlighted in di-BCP systems. Functionalities and newly reported uses for electronic and non-electronic technologies based on the inherent properties of incorporated inorganic nanostructures using di-BCP templates are highlighted. We outline the potential for extension of incorporation methods to triblock copolymer features for more diverse applications. Challenges and emerging areas of interest for inorganic infiltration of BCPs are also discussed.

Thermal dewetting with a chemically heterogeneous nano-template for self-assembled L1(0) FePt nanoparticle arrays

A design for the fabrication of metallic nanoparticles is presented by thermal dewetting with a chemically heterogeneous nano-template. For the template, we fabricate a nanostructured polystyrene-b-polydimethylsiloxane (PS-b-PDMS) film on a Si|SiO2 substrate, followed by a thermal annealing and reactive ion etching (RIE) process. This gives a template composed of an ordered hexagonal array of SiOC hemispheres emerging in the polystyrene matrix. After the deposition of a FePt film on this template, we utilize the rapid thermal annealing (RTA) process, which provides in-plane stress, to achieve thermal dewetting and structural ordering of FePt simultaneously. Since the template is composed of different composition surfaces with periodically varied morphologies, it offers more tuning knobs to manipulate the nanostructures. We show that both the decrease in the area of the PS matrix and the increase in the strain energy relaxation transfer the dewetted pattern from the randomly distributed nanoparticles into a hexagonal periodic array of L10 FePt nanoparticles. Transmission electron microscopy with the in situ heating stage reveals the evolution of the dewetting process, and confirms that the positions of nanoparticles are aligned with those of the SiOC hemispheres. The nanoparticles formed by this template-dewetting show an average diameter and center-to-center distance of 19.30 ± 2.09 nm and 39.85 ± 4.80 nm, respectively. The hexagonal array of FePt nanoparticles reveals a large coercivity of 1.5 T, much larger than the nanoparticles fabricated by top-down approaches. This approach offers an efficient pathway toward self-assembled nanostructures in a wide range of material systems.

Tunable bioelectrodes with wrinkled-ridged graphene oxide surfaces for electrochemical nitrate sensors

Morphological transitions from wrinkles to localized ridges are realized in the graphene oxide layer of a bioelectrode by simple stretching and relaxing, which allow tuning and improving the sensing characteristics of the enzymatic nitrate sensor.

Ultra-rapid pattern formation of block copolymers with a high-χ parameter in immersion annealing induced by a homopolymer

Ultra-rapid pattern formation of homopolymer/BCP blend is demonstrated. A highly ordered dot pattern can be achieved for an extremely short immersion time (10 s) by controlling the annealing temperature and mixing ratio of binary solvent.

Performance Enhancement of Electronic and Energy Devices via Block Copolymer Self-Assembly

The use of self-assembled block copolymers (BCPs) for the fabrication of electronic and energy devices has received a tremendous amount of attention as a non-traditional approach to patterning integrated circuit elements at nanometer dimensions and densities inaccessible to traditional lithography techniques. The exquisite control over the dimensional features of the self-assembled nanostructures (i.e., shape, size, and periodicity) is one of the most attractive properties of BCP self-assembly. Harmonic spatial arrangement of the self-assembled nanoelements at desired positions on the chip may offer a new strategy for the fabrication of electronic and energy devices. Several recent reports show the great promise in using BCP self-assembly for practical applications of electronic and energy devices, leading to substantial enhancements of the device performance. Recent progress is summarized here, with regard to the performance enhancements of non-volatile memory, electrical sensor, and energy devices enabled by directed BCP self-assembly.

Multilevel memristor effect in metal-semiconductor core-shell nanoparticles tested by scanning tunneling spectroscopy

We have grown gold (Au) and copper-zinc-tin-sulfide (CZTS) nanocrystals and Au-CZTS core-shell nanostructures, with gold in the core and the semiconductor in the shell layer, through a high-temperature colloidal synthetic approach. Following usual characterization, we formed ultrathin layers of these in order to characterize the nanostructures in an ultrahigh-vacuum scanning tunneling microscope. Scanning tunneling spectroscopy of individual nanostructures showed the memristor effect or resistive switching from a low- to a high-conducting state upon application of a suitable voltage pulse. The Au-CZTS core-shell nanostructures also show a multilevel memristor effect with the nanostructures undergoing two transitions in conductance at two magnitudes of voltage pulse. We have studied the reproducibility, reversibility, and retentivity of the multilevel memristors. From the normalized density of states (NDOS), we infer that the memristor effect is correlated to a decrease in the transport gap of the nanostructures. We also infer that the memristor effect occurs in the nanostructures due to an increase in the density of available states upon application of a voltage pulse.

Flexible one diode-one phase change memory array enabled by block copolymer self-assembly

Flexible memory is the fundamental component for data processing, storage, and radio frequency communication in flexible electronic systems. Among several emerging memory technologies, phase-change random-access memory (PRAM) is one of the strongest candidate for next-generation nonvolatile memories due to its remarkable merits of large cycling endurance, high speed, and excellent scalability. Although there are a few approaches for flexible phase-change memory (PCM), high reset current is the biggest obstacle for the practical operation of flexible PCM devices. In this paper, we report a flexible PCM realized by incorporating nanoinsulators derived from a Si-containing block copolymer (BCP) to significantly lower the operating current of the flexible memory formed on plastic substrate. The reduction of thermal stress by BCP nanostructures enables the reliable operation of flexible PCM devices integrated with ultrathin flexible diodes during more than 100 switching cycles and 1000 bending cycles.

High on-off ratio improvement of ZnO-based forming-free memristor by surface hydrogen annealing

In this work, a high-performance, forming-free memristor based on Au/ZnO nanorods/AZO (Al-doped ZnO conductive glass) sandwich structure has been developed by rapid hydrogen annealing treatment. The Ron/Roff rate is dramatically increased from ∼10 to ∼10(4) after the surface treatment. Such an enhanced performance is attributed to the introduced oxygen vacancies layer at the top of ZnO nanorods. The device also exhibits excellent switching and retention stability. In addition, the carrier migration behavior can be well interpreted by classical trap-controlled space charge limited conduction, which verifies the forming of conductive filamentary in low resistive state. On this basis, Arrhenius activation theory is adopted to explain the drifting of oxygen vacancies, which is further confirmed by the time pertinence of resistive switching behavior under different sweep speed. This fabrication approach offers a useful approach to enhance the switching properties for next-generation memory applications.

Recent advances in graphene and its metal-oxide hybrid nanostructures for lithium-ion batteries

Today, one of the major challenges is to provide green and powerful energy sources for a cleaner environment. Rechargeable lithium-ion batteries (LIBs) are promising candidates for energy storage devices, and have attracted considerable attention due to their high energy density, rapid response, and relatively low self-discharge rate. The performance of LIBs greatly depends on the electrode materials; therefore, attention has been focused on designing a variety of electrode materials. Graphene is a two-dimensional carbon nanostructure, which has a high specific surface area and high electrical conductivity. Thus, various studies have been performed to design graphene-based electrode materials by exploiting these properties. Metal-oxide nanoparticles anchored on graphene surfaces in a hybrid form have been used to increase the efficiency of electrode materials. This review highlights the recent progress in graphene and graphene-based metal-oxide hybrids for use as electrode materials in LIBs. In particular, emphasis has been placed on the synthesis methods, structural properties, and synergetic effects of metal-oxide/graphene hybrids towards producing enhanced electrochemical response. The use of hybrid materials has shown significant improvement in the performance of electrodes.

Topographically-designed triboelectric nanogenerator via block copolymer self-assembly

Herein, we report a facile and robust route to nanoscale tunable triboelectric energy harvesters realized by the formation of highly functional and controllable nanostructures via block copolymer (BCP) self-assembly. Our strategy is based on the incorporation of various silica nanostructures derived from the self-assembly of BCPs to enhance the characteristics of triboelectric nanogenerators (TENGs) by modulating the contact-surface area and the frictional force. Our simulation data also confirm that the nanoarchitectured morphologies are effective for triboelectric generation.

Highly compact (4F2) and well behaved nano-pillar transistor controlled resistive switching cell for neuromorphic system application

To simplify the architecture of a neuromorphic system, it is extremely desirable to develop synaptic cells with the capacity of low operation power, high density integration, and well controlled synaptic behaviors. In this study, we develop a resistive switching device (ReRAM)-based synaptic cell, fabricated by the CMOS compatible nano-fabrication technology. The developed synaptic cell consists of one vertical gate-all-around Si nano-pillar transistor (1T) and one transition metal-oxide based resistive switching device (1R) stacked on top of the vertical transistor directly. Thanks to the vertical architecture and excellent controllability on the ON/OFF performance of the nano-pillar transistor, the 1T1R synaptic cell shows excellent characteristics such as extremely high-density integration ability with 4F(2) footprint, ultra-low operation current (<2 nA), fast switching speed (<10 ns), multilevel data storage and controllable synaptic switching, which are extremely desirable for simplifying the architecture of neuromorphic system.

Reliable control of filament formation in resistive memories by self-assembled nanoinsulators derived from a block copolymer

Resistive random access memory (ReRAM) is a promising candidate for future nonvolatile memories. Resistive switching in a metal-insulator-metal structure is generally assumed to be caused by the formation/rupture of nanoscale conductive filaments (CFs) under an applied electric field. The critical issue of ReRAM for practical memory applications, however, is insufficient repeatability of the operating voltage and resistance ratio. Here, we present an innovative approach to reliably and reproducibly control the CF growth in unipolar NiO resistive memory by exploiting uniform formation of insulating SiOx nanostructures from the self-assembly of a Si-containing block copolymer. In this way, the standard deviation (SD) of set and reset voltages was markedly reduced by 76.9% and 59.4%, respectively. The SD of high resistance state also decreased significantly, from 6.3 × 10(7) Ω to 5.4 × 10(4) Ω. Moreover, we report direct observations of localized metallic Ni CF formation and their controllable growth using electron microscopy and discuss electrothermal simulation results based on the finite element method supporting our analysis results.

Three-dimensional nanofabrication by block copolymer self-assembly

Thin films of block copolymers are widely seen as enablers for nanoscale fabrication of semiconductor devices, membranes, and other structures, taking advantage of microphase separation to produce well-organized nanostructures with periods of a few nm and above. However, the inherently three-dimensional structure of block copolymer microdomains could enable them to make 3D devices and structures directly, which could lead to efficient fabrication of complex heterogeneous structures. This article reviews recent progress in developing 3D nanofabrication processes based on block copolymers.

Structural development of gold and silver nanoparticles within hexagonally ordered spherical micellar diblock copolymer thin films

The spatial arrangement of metal nanoparticle (NP) arrays in block copolymers has many potential applications in OFET-type memory devices. In this study, we adopted a trapping approach in which we used a monolayer thin film of polystyrene-block-poly(4-vinylpyridine) (PS56k-b-P4VP8k)-a highly asymmetric diblock copolymer having a spherical micelle morphology-to incorporate various amounts of one-phase-synthesized dodecanethiol-passivated silver (DT-Ag) NPs and a fixed amount of ligand-exchanged pyridine-coated gold (Py-Au) NPs into the polystyrene (PS) and poly(4-vinylpyridine) (P4VP) blocks, respectively. We characterized the packing of these metal NPs in the two blocks of the nanostructured diblock copolymer using reciprocal-space synchrotron grazing incidence small-angle X-ray scattering (GISAXS) as well as atomic force microscopy (AFM) and transmission electron microscopy (TEM) in the real space. The packing of the Ag NPs in the PS block was dependent on their content, which we tuned by varying the concentrations in the composite solution at a constant rate of spin-coating. The two-dimensional hierarchical arrangement of Ag and Au NPs within the BCP thin films was enhanced after addition of the Py-Au NPs into the P4VP block and after spin-coating a thinner film from a low concentration solution (0.1 wt%), due to the DT-Ag NPs accumulating around the Py-Au/P4VP cores; this two-dimensional hierarchical arrangement decreased at a critical DT-Ag NP weight ratio (c) of 0.8 when incorporating the Py-Au NPs into the P4VP domains through spin-coating at higher solution concentration (0.5 wt%), where the DT-Ag NPs realigned by rotating 20° along the z axis in the real space, due to oversaturation of the DT-Ag NPs within the PS domains.

Host-guest self-assembly in block copolymer blends

Ultrafine, uniform nanostructures with excellent functionalities can be formed by self-assembly of block copolymer (BCP) thin films. However, extension of their geometric variability is not straightforward due to their limited thin film morphologies. Here, we report that unusual and spontaneous positioning between host and guest BCP microdomains, even in the absence of H-bond linkages, can create hybridized morphologies that cannot be formed from a neat BCP. Our self-consistent field theory (SCFT) simulation results theoretically support that the precise registration of a spherical BCP microdomain (guest, B-b-C) at the center of a perforated lamellar BCP nanostructure (host, A-b-B) can energetically stabilize the blended morphology. As an exemplary application of the hybrid nanotemplate, a nanoring-type Ge2Sb2Te5 (GST) phase-change memory device with an extremely low switching current is demonstrated. These results suggest the possibility of a new pathway to construct more diverse and complex nanostructures using controlled blending of various BCPs.

Proximity injection of plasticizing molecules to self-assembling polymers for large-area, ultrafast nanopatterning in the sub-10-nm regime

While the uses of block copolymers (BCPs) with a high Flory-Huggins interaction parameter (χ) are advantageous for the improvement of resolution and line edge fluctuations of self-assembled nanoscale patterns, their slow chain diffusion results in a prolonged assembly time. Although solvent vapor annealing has shown great effectiveness in promoting the self-assembly of such BCPs, a practical methodology to achieve a uniform swelling level in wafer-scale BCP thin films has not been reported. Here, we show that a solvent-swollen polymer gel pad can be used as a highly controllable vapor source for the rapid, large-area (>200 mm in diameter) formation of sub-10-nm patterns from a high-χ BCP. The proximal injection of solvent vapors to BCP films and the systematic control of the swelling levels and temperatures can significantly boost the self-assembly kinetics, realizing the formation of well-aligned sub-10-nm half-pitch patterns within 1 min of self-assembly. Moreover, we show that the gel pad can be used for the shear-induced alignment of BCP microdomains in an extremely short time of ~5 s as well as for the generation of three-dimensional crossed-wire nanostructures with controlled alignment angles.

Self-assembled incorporation of modulated block copolymer nanostructures in phase-change memory for switching power reduction

Phase change memory (PCM), which exploits the phase change behavior of chalcogenide materials, affords tremendous advantages over conventional solid-state memory due to its nonvolatility, high speed, and scalability. However, high power consumption of PCM poses a critical challenge and has been the most significant obstacle to its widespread commercialization. Here, we present a novel approach based on the self-assembly of a block copolymer (BCP) to form a thin nanostructured SiOx layer that locally blocks the contact between a heater electrode and a phase change material. The writing current is decreased 5-fold (corresponding to a power reduction by 1/20) as the occupying area fraction of SiOx nanostructures is increased from a fill factor of 9.1% to 63.6%. Simulation results theoretically explain the current reduction mechanism by localized switching of BCP-blocked phase change materials.

Multimode resistive switching in single ZnO nanoisland system

Resistive memory has attracted a great deal of attention as an alternative to contemporary flash memory. Here we demonstrate an interesting phenomenon that multimode resistive switching, i.e. threshold-like, self-rectifying and ordinary bipolar switching, can be observed in one self-assembled single-crystalline ZnO nanoisland with base diameter and height ranging around 30 and 40 nm on Si at different levels of current compliance. Current-voltage characteristics, conductive atomic force microscopy (C-AFM), and piezoresponse force microscopy results show that the threshold-like and self-rectifying types of switching are controlled by the movement of oxygen vacancies in ZnO nanoisland between the C-AFM tip and Si substrate while ordinary bipolar switching is controlled by formation and rupture of conducting nano-filaments. Threshold-like switching leads to a very small switching power density of 1 × 10(3) W/cm(2).