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Kumar P, Singh G, Guan X, Roy S, Lee J, Kim IY, Li X, Bu F, Bahadur R, Iyengar SA, Yi J, Zhao D, Ajayan PM, Vinu A. The Rise of Xene Hybrids. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403881. [PMID: 38899836 DOI: 10.1002/adma.202403881] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2024] [Revised: 05/22/2024] [Indexed: 06/21/2024]
Abstract
Xenes, mono-elemental atomic sheets, exhibit Dirac/Dirac-like quantum behavior. When interfaced with other 2D materials such as boron nitride, transition metal dichalcogenides, and metal carbides/nitrides/carbonitrides, it enables them with unique physicochemical properties, including structural stability, desirable bandgap, efficient charge carrier injection, flexibility/breaking stress, thermal conductivity, chemical reactivity, catalytic efficiency, molecular adsorption, and wettability. For example, BN acts as an anti-oxidative shield, MoS2 injects electrons upon laser excitation, and MXene provides mechanical flexibility. Beyond precise compositional modulations, stacking sequences, and inter-layer coupling controlled by parameters, achieving scalability and reproducibility in hybridization is crucial for implementing these quantum materials in consumer applications. However, realizing the full potential of these hybrid materials faces challenges such as air gaps, uneven interfaces, and the formation of defects and functional groups. Advanced synthesis techniques, a deep understanding of quantum behaviors, precise control over interfacial interactions, and awareness of cross-correlations among these factors are essential. Xene-based hybrids show immense promise for groundbreaking applications in quantum computing, flexible electronics, energy storage, and catalysis. In this timely perspective, recent discoveries of novel Xenes and their hybrids are highlighted, emphasizing correlations among synthetic parameters, structure, properties, and applications. It is anticipated that these insights will revolutionize diverse industries and technologies.
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Affiliation(s)
- Prashant Kumar
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Gurwinder Singh
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Xinwei Guan
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Soumyabrata Roy
- Department of Materials Science and Nano Engineering, Rice University, 6100 Main St, Houston, TX, 77005, USA
- Department of Sustainable Energy Engineering, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh, 208016, India
| | - Jangmee Lee
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - In Young Kim
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Xiaomin Li
- Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Laboratory of Advanced Materials, State Key Laboratory of Molecular Engineering of Polymers, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Fudan University, Shanghai, 200433, P. R. China
| | - Fanxing Bu
- Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Laboratory of Advanced Materials, State Key Laboratory of Molecular Engineering of Polymers, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Fudan University, Shanghai, 200433, P. R. China
| | - Rohan Bahadur
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Sathvik Ajay Iyengar
- Department of Materials Science and Nano Engineering, Rice University, 6100 Main St, Houston, TX, 77005, USA
| | - Jiabao Yi
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Dongyuan Zhao
- Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Laboratory of Advanced Materials, State Key Laboratory of Molecular Engineering of Polymers, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Fudan University, Shanghai, 200433, P. R. China
| | - Pulickel M Ajayan
- Department of Materials Science and Nano Engineering, Rice University, 6100 Main St, Houston, TX, 77005, USA
| | - Ajayan Vinu
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
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Laref S, Harrou F, Sun Y, Gao X, Gojobori T. Exploring Antiviral Drugs on Monolayer Black Phosphorene: Atomistic Theory and Explainable Machine Learning-Assisted Platform. Int J Mol Sci 2024; 25:4897. [PMID: 38732115 PMCID: PMC11084629 DOI: 10.3390/ijms25094897] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2024] [Revised: 04/24/2024] [Accepted: 04/26/2024] [Indexed: 05/13/2024] Open
Abstract
Favipiravir (FP) and ebselen (EB) belong to a diverse class of antiviral drugs known for their significant efficacy in treating various viral infections. Utilizing molecular dynamics (MD) simulations, machine learning, and van der Waals density functional theory, we accurately elucidate the binding properties of these antiviral drugs on a phosphorene single-layer. To further investigate these characteristics, this study employs four distinct machine learning models-Random Forest, Gradient Boosting, XGBoost, and CatBoost. The Hamiltonian of antiviral molecules within a monolayer of phosphorene is appropriately trained. The key aspect of utilizing machine learning (ML) in drug design revolves around training models that are efficient and precise in approximating density functional theory (DFT). Furthermore, the study employs SHAP (SHapley Additive exPlanations) to elucidate model predictions, providing insights into the contribution of each feature. To explore the interaction characteristics and thermodynamic properties of the hybrid drug, we employ molecular dynamics and DFT calculations in a vacuum interface. Our findings suggest that this functionalized 2D complex exhibits robust thermostability, indicating its potential as an effective and enabled entity. The observed variations in free energy at different surface charges and temperatures suggest the adsorption potential of FP and EB molecules from the surrounding environment.
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Affiliation(s)
- Slimane Laref
- Computational Bioscience Research Center (CBRC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia; (X.G.); (T.G.)
| | - Fouzi Harrou
- Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia;
| | - Ying Sun
- Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia;
| | - Xin Gao
- Computational Bioscience Research Center (CBRC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia; (X.G.); (T.G.)
| | - Takashi Gojobori
- Computational Bioscience Research Center (CBRC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia; (X.G.); (T.G.)
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Wu N, Liu Y, Wang S, Xing Z. Thermal Rectification across an Asymmetric Layer Carbon Nanotube van der Waals Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9155-9168. [PMID: 38324388 DOI: 10.1021/acsami.3c17317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
The exceptional thermal conductivity and strength of carbon nanotubes (CNTs) position them as outstanding materials for thermal conduction. The intriguing properties introduced by van der Waals (vdW) heterojunctions have also captured the interest of researchers. However, further refinement of the research concerning the integration of these two elements is required. In our study, a vdW heterostructure with asymmetric layer nesting of multiwalled CNTs (ALCNTs) is devised, with a specific focus on the model's heat flux and thermal rectification (TR) properties, which are analyzed using nonequilibrium molecular dynamics (NEMD). Notably, the greatest TR ratio is observed in the connection of three-layer and single-layer ALCNTs. Moreover, multilayer variable-length nested models exhibit a sluggish TR ratio. An examination of the interface thermal resistance (ITR) reveals that the maximum ITR in the multilayer nested model resides at the rightmost interface. However, it is essential to highlight that the determinant of the TR ratio and heat flux in the multilayer nested model is not the maximum ITR of the rightmost interface but rather the ITR of the outermost layer on the left. Additionally, the impacts of the defect density, length, temperature difference, and hydrogenation on the model's heat flux and TR are explored, yielding noteworthy conclusions. For instance, defects in the outer CNT have a minimal influence on the heat flux and TR compared with those in the inner CNT. As the length increases, the heat flux initially decreases and then increases. Hydrogenation significantly enhances the model's heat flux but does not favor the TR. Our study contributes to advancing the understanding of CNT vdW heterojunctions and offers valuable insights for their practical applications.
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Affiliation(s)
- Ning Wu
- Department of Power Engineering, School of Energy and Power Engineering, North China Electric Power University, Baoding 071003, Hebei, China
| | - Yingguang Liu
- Department of Power Engineering, School of Energy and Power Engineering, North China Electric Power University, Baoding 071003, Hebei, China
- Hebei Key Laboratory of Low Carbon and High Efficiency Power Generation Technology, North China Electric Power University, Baoding 071003, Hebei, China
| | - Shuo Wang
- Department of Power Engineering, School of Energy and Power Engineering, North China Electric Power University, Baoding 071003, Hebei, China
| | - Zhibo Xing
- Department of Power Engineering, School of Energy and Power Engineering, North China Electric Power University, Baoding 071003, Hebei, China
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Dai B, Su Y, Guo Y, Wu C, Xie Y. Recent Strategies for the Synthesis of Phase-Pure Ultrathin 1T/1T' Transition Metal Dichalcogenide Nanosheets. Chem Rev 2024; 124:420-454. [PMID: 38146851 DOI: 10.1021/acs.chemrev.3c00422] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
The past few decades have witnessed a notable increase in transition metal dichalcogenide (TMD) related research not only because of the large family of TMD candidates but also because of the various polytypes that arise from the monolayer configuration and layer stacking order. The peculiar physicochemical properties of TMD nanosheets enable an enormous range of applications from fundamental science to industrial technologies based on the preparation of high-quality TMDs. For polymorphic TMDs, the 1T/1T' phase is particularly intriguing because of the enriched density of states, and thus facilitates fruitful chemistry. Herein, we comprehensively discuss the most recent strategies for direct synthesis of phase-pure 1T/1T' TMD nanosheets such as mechanical exfoliation, chemical vapor deposition, wet chemical synthesis, atomic layer deposition, and more. We also review frequently adopted methods for phase engineering in TMD nanosheets ranging from chemical doping and alloying, to charge injection, and irradiation with optical or charged particle beams. Prior to the synthesis methods, we discuss the configuration of TMDs as well as the characterization tools mostly used in experiments. Finally, we discuss the current challenges and opportunities as well as emphasize the promising fields for the future development.
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Affiliation(s)
- Baohu Dai
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yueqi Su
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yuqiao Guo
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Changzheng Wu
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
| | - Yi Xie
- Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
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Radhakrishnan S, Patra A, Manasa G, Belgami MA, Mun Jeong S, Rout CS. Borocarbonitride-Based Emerging Materials for Supercapacitor Applications: Recent Advances, Challenges, and Future Perspectives. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305325. [PMID: 38009510 PMCID: PMC10811497 DOI: 10.1002/advs.202305325] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Revised: 10/19/2023] [Indexed: 11/29/2023]
Abstract
Supercapacitors have emerged as a promising energy storage technology due to their high-power density, fast charging/discharging capabilities, and long cycle life. Moreover, innovative electrode materials are extensively explored to enhance the performance, mainly the energy density of supercapacitors. Among the two-dimensional (2D) supercapacitor electrodes, borocarbonitride (BCN) has sparked widespread curiosity owing to its exceptional tunable properties concerning the change in concentration of the constituent elements, along with an excellent alternative to graphene-based electrodes. BCN, an advanced nanomaterial, possesses excellent electrical conductivity, chemical stability, and a large specific surface area. These factors contribute to supercapacitors' overall performance and reliability, making them a viable option to address the energy crisis. This review provides a detailed survey of BCN, its structural, electronic, chemical, magnetic, and mechanical properties, advanced synthesis methods, factors affecting the charge storage mechanism, and recent advances in BCN-based supercapacitor electrodes. The review embarks on the scrupulous elaboration of ways to enhance the electrochemical properties of BCN through various innovative strategies followed by critical challenges and future perspectives. BCN, as an eminent electrode material, holds great potential to revolutionize the energy landscape and support the growing energy demands of the future.
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Affiliation(s)
- Sithara Radhakrishnan
- Centre for Nano and Material SciencesJain (Deemed‐to‐be University)Jain Global Campus, Kanakapura RoadBangaloreKarnataka562112India
| | - Abhinandan Patra
- Centre for Nano and Material SciencesJain (Deemed‐to‐be University)Jain Global Campus, Kanakapura RoadBangaloreKarnataka562112India
| | - G. Manasa
- Centre for Nano and Material SciencesJain (Deemed‐to‐be University)Jain Global Campus, Kanakapura RoadBangaloreKarnataka562112India
| | - Mohammed Arkham Belgami
- Centre for Nano and Material SciencesJain (Deemed‐to‐be University)Jain Global Campus, Kanakapura RoadBangaloreKarnataka562112India
| | - Sang Mun Jeong
- Department of Chemical EngineeringChungbuk National UniversityCheongjuChungbuk28644Republic of Korea
| | - Chandra Sekhar Rout
- Centre for Nano and Material SciencesJain (Deemed‐to‐be University)Jain Global Campus, Kanakapura RoadBangaloreKarnataka562112India
- Department of Chemical EngineeringChungbuk National UniversityCheongjuChungbuk28644Republic of Korea
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6
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Nasr AK, Ganesh R. Correlations in randomly stacked solids. Phys Rev E 2023; 108:035003. [PMID: 37849127 DOI: 10.1103/physreve.108.035003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 08/29/2023] [Indexed: 10/19/2023]
Abstract
Packing of spheres is a problem with a long history dating back to Kepler's conjecture in 1611. The highest density is realized in face-centered-cubic (FCC) and hexagonal-close-packed (HCP) arrangements. These are only limiting examples of an infinite family of maximal-density structures called Barlow stackings. They are constructed by stacking triangular layers, with each layer shifted with respect to the one below. At the other extreme, Torquato-Stillinger stackings are believed to yield the lowest possible density while preserving mechanical stability. They form an infinite family of structures composed of stacked honeycomb layers. In this article, we characterize layer-correlations in both families when the stacking is random. To do so, we take advantage of the Hägg code-a mapping between a Barlow stacking and a one-dimensional Ising magnet. The layer correlation is related to a moment-generating function of the Ising model. We first determine the layer correlation for random Barlow stacking, finding exponential decay. We next introduce a bias favoring one of two stacking chiralities-equivalent to a magnetic field in the Ising model. Although this bias favors FCC ordering, there is no long-ranged order as correlations still decay exponentially. Finally, we consider Torquato-Stillinger stackings, which map to a combination of an Ising magnet and a three-state Potts model. With random stacking, the correlations decay exponentially with a form that is similar to the Barlow problem. We discuss relevance to ordering in clusters of stacked solids and for layer-deposition-based synthesis methods.
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Affiliation(s)
- Amna Khairi Nasr
- Sir Winston Churchill Secondary School, St Catharines, Ontario, Canada, L2T 2N1
- Department of Physics, Brock University, St. Catharines, Ontario, Canada, L2S 3A1
| | - R Ganesh
- Department of Physics, Brock University, St. Catharines, Ontario, Canada, L2S 3A1
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7
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Laref S, Harrou F, Wang B, Sun Y, Laref A, Laleg-Kirati TM, Gojobori T, Gao X. Synergy of Small Antiviral Molecules on a Black-Phosphorus Nanocarrier: Machine Learning and Quantum Chemical Simulation Insights. Molecules 2023; 28:molecules28083521. [PMID: 37110754 PMCID: PMC10142408 DOI: 10.3390/molecules28083521] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 04/03/2023] [Accepted: 04/10/2023] [Indexed: 04/29/2023] Open
Abstract
Favipiravir (FP) and Ebselen (EB) belong to a broad range of antiviral drugs that have shown active potential as medications against many viruses. Employing molecular dynamics simulations and machine learning (ML) combined with van der Waals density functional theory, we have uncovered the binding characteristics of these two antiviral drugs on a phosphorene nanocarrier. Herein, by using four different machine learning models (i.e., Bagged Trees, Gaussian Process Regression (GPR), Support Vector Regression (SVR), and Regression Trees (RT)), the Hamiltonian and the interaction energy of antiviral molecules in a phosphorene monolayer are trained in an appropriate way. However, training efficient and accurate models for approximating the density functional theory (DFT) is the final step in using ML to aid in the design of new drugs. To improve the prediction accuracy, the Bayesian optimization approach has been employed to optimize the GPR, SVR, RT, and BT models. Results revealed that the GPR model obtained superior prediction performance with an R2 of 0.9649, indicating that it can explain 96.49% of the data's variability. Then, by means of DFT calculations, we examine the interaction characteristics and thermodynamic properties in a vacuum and a continuum solvent interface. These results illustrate that the hybrid drug is an enabled, functionalized 2D complex with vigorous thermostability. The change in Gibbs free energy at different surface charges and temperatures implies that the FP and EB molecules are allowed to adsorb from the gas phase onto the 2D monolayer at different pH conditions and high temperatures. The results reveal a valuable antiviral drug therapy loaded by 2D biomaterials that may possibly open a new way of auto-treating different diseases, such as SARS-CoV, in primary terms.
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Affiliation(s)
- Slimane Laref
- Computational Bioscience Research Center (CBRC), King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Fouzi Harrou
- A Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Bin Wang
- Center for Interfacial Reaction Engineering (CIRE), School of Chemical, Biological and Materials Engineering, University of Oklahoma, Norman, OK 73019, USA
| | - Ying Sun
- A Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Amel Laref
- Department of Physics and Astronomy, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
| | - Taous-Meriem Laleg-Kirati
- A Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Takashi Gojobori
- Computational Bioscience Research Center (CBRC), King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Xin Gao
- Computational Bioscience Research Center (CBRC), King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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Burns K, Tan AMZ, Hachtel JA, Aditya A, Baradwaj N, Mishra A, Linker T, Nakano A, Kalia R, Lang EJ, Schoell R, Hennig RG, Hattar K, Aitkaliyeva A. Tailoring the Angular Mismatch in MoS 2 Homobilayers through Deformation Fields. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2300098. [PMID: 37026674 DOI: 10.1002/smll.202300098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Revised: 03/06/2023] [Indexed: 06/19/2023]
Abstract
Ultrathin MoS2 has shown remarkable characteristics at the atomic scale with an immutable disorder to weak external stimuli. Ion beam modification unlocks the potential to selectively tune the size, concentration, and morphology of defects produced at the site of impact in 2D materials. Combining experiments, first-principles calculations, atomistic simulations, and transfer learning, it is shown that irradiation-induced defects can induce a rotation-dependent moiré pattern in vertically stacked homobilayers of MoS2 by deforming the atomically thin material and exciting surface acoustic waves (SAWs). Additionally, the direct correlation between stress and lattice disorder by probing the intrinsic defects and atomic environments are demonstrated. The method introduced in this paper sheds light on how engineering defects in the lattice can be used to tailor the angular mismatch in van der Waals (vdW) solids.
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Affiliation(s)
- Kory Burns
- Department of Materials Science & Engineering, University of Florida, Gainesville, FL, 32611, USA
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87545, USA
- Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Anne Marie Z Tan
- Department of Materials Science & Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Anikeya Aditya
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Nitish Baradwaj
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Ankit Mishra
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Thomas Linker
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Aiichiro Nakano
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Rajiv Kalia
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Eric J Lang
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87545, USA
- Department of Nuclear Engineering, University of New Mexico, Albuquerque, NM, 87131, USA
| | - Ryan Schoell
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87545, USA
| | - Richard G Hennig
- Department of Materials Science & Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Khalid Hattar
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87545, USA
- Department of Nuclear Engineering, University of Tennessee, Knoxville, TN, 37996, USA
| | - Assel Aitkaliyeva
- Department of Materials Science & Engineering, University of Florida, Gainesville, FL, 32611, USA
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Laref S, Wang B, Gao X, Gojobori T. Computational Studies of Auto-Active van der Waals Interaction Molecules on Ultra-Thin Black-Phosphorus Film. Molecules 2023; 28:molecules28020681. [PMID: 36677738 PMCID: PMC9864666 DOI: 10.3390/molecules28020681] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2022] [Revised: 01/03/2023] [Accepted: 01/04/2023] [Indexed: 01/11/2023] Open
Abstract
Using the van der Waals density functional theory, we studied the binding peculiarities of favipiravir (FP) and ebselen (EB) molecules on a monolayer of black phosphorene (BP). We systematically examined the interaction characteristics and thermodynamic properties in a vacuum and a continuum, solvent interface for active drug therapy. These results illustrate that the hybrid molecules are enabled functionalized two-dimensional (2D) complex systems with a vigorous thermostability. We demonstrate in this study that these molecules remain flat on the monolayer BP system and phosphorus atoms are intact. It is inferred that the hybrid FP+EB molecules show larger adsorption energy due to the van der Waals forces and planar electrostatic interactions. The changes in Gibbs free energy at different surface charge fluctuations and temperatures imply that the FP and EB are allowed to adsorb from the gas phase onto the 2D film at high temperatures. Thereby, the results unveiled beneficial inhibitor molecules on two dimensional BP nanocarriers, potentially introducing a modern strategy to enhance the development of advanced materials, biotechnology, and nanomedicine.
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Affiliation(s)
- Slimane Laref
- Computational Bioscience Research Center (CBRC), King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
- Correspondence:
| | - Bin Wang
- School of Chemical, Biological and Materials Engineering, Center for Interfacial Reaction Engineering (CIRE), University of Oklahoma, Norman, OK 73019, USA
| | - Xin Gao
- Computational Bioscience Research Center (CBRC), King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Takashi Gojobori
- Computational Bioscience Research Center (CBRC), King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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10
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Attaccalite C, Prete MS, Palummo M, Pulci O. Interlayer and Intralayer Excitons in AlN/ WS2 Heterostructure. MATERIALS (BASEL, SWITZERLAND) 2022; 15:8318. [PMID: 36499811 PMCID: PMC9735989 DOI: 10.3390/ma15238318] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Revised: 11/14/2022] [Accepted: 11/15/2022] [Indexed: 06/17/2023]
Abstract
The study of intra and interlayer excitons in 2D semiconducting vdW heterostructures is a very hot topic not only from a fundamental but also an applicative point of view. Due to their strong light-matter interaction, Transition Metal Dichalcogenides (TMD) and group-III nitrides are particularly attractive in the field of opto-electronic applications such as photo-catalytic and photo-voltaic ultra-thin and flexible devices. Using first-principles ground and excited-state simulations, we investigate here the electronic and excitonic properties of a representative nitride/TMD heterobilayer, the AlN/WS2. We demonstrate that the band alignment is of type I, and low energy intralayer excitons are similar to those of a pristine WS2 monolayer. Further, we disentangle the role of strain and AlN dielectric screening on the electronic and optical gaps. These results, although they do not favor the possible use of AlN/WS2 in photo-catalysis, as envisaged in the previous literature, can boost the recently started experimental studies of 2D hexagonal aluminum nitride as a good low screening substrate for TMD-based electronic and opto-electronic devices. Importantly, our work shows how the inclusion of both spin-orbit and many-body interactions is compulsory for the correct prediction of the electronic and optical properties of TMD/nitride heterobilayers.
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Affiliation(s)
- Claudio Attaccalite
- Centre Interdisciplinaire de Nanoscience de Marseille UMR 7325 Campus de Luminy, CNRS/Aix-Marseille Université, CEDEX 9, 13288 Marseille, France
- European Theoretical Spectroscopy Facilities (ETSF)
| | - Maria Stella Prete
- Dipartimento di Fisica, Universitá di Roma Tor Vergata, and INFN, Via della Ricerca Scientifica 1, I-00133 Rome, Italy
| | - Maurizia Palummo
- European Theoretical Spectroscopy Facilities (ETSF)
- Dipartimento di Fisica, Universitá di Roma Tor Vergata, and INFN, Via della Ricerca Scientifica 1, I-00133 Rome, Italy
| | - Olivia Pulci
- European Theoretical Spectroscopy Facilities (ETSF)
- Dipartimento di Fisica, Universitá di Roma Tor Vergata, and INFN, Via della Ricerca Scientifica 1, I-00133 Rome, Italy
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11
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Sahu TK, Motlag M, Bandyopadhyay A, Kumar N, Cheng GJ, Kumar P. 2+δ-Dimensional Materials via Atomistic Z-Welding. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2202695. [PMID: 36089664 PMCID: PMC9661819 DOI: 10.1002/advs.202202695] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/08/2022] [Revised: 07/27/2022] [Indexed: 06/15/2023]
Abstract
Pivotal to functional van der Waals stacked flexible electronic/excitonic/spintronic/thermoelectric chips is the synergy amongst constituent layers. However; the current techniques viz. sequential chemical vapor deposition, micromechanical/wet-chemical transfer are mostly limited due to diffused interfaces, and metallic remnants/bubbles at the interface. Inter-layer-coupled 2+δ-dimensional materials, as a new class of materials can be significantly suitable for out-of-plane carrier transport and hence prompt response in prospective devices. Here, the discovery of the use of exotic electric field ≈106 V cm- 1 (at microwave hot-spot) and 2 thermomechanical conditions i.e. pressure ≈1 MPa, T ≈ 200 °C (during solvothermal reaction) to realize 2+δ-dimensional materials is reported. It is found that Pz Pz chemical bonds form between the component layers, e.g., CB and CN in G-BN, MoN and MoB in MoS2 -BN hybrid systems as revealed by X-ray photoelectron spectroscopy. New vibrational peaks in Raman spectra (BC ≈1320 cm-1 for the G-BN system and MoB ≈365 cm-1 for the MoS2 -BN system) are recorded. Tunable mid-gap formation, along with diodic behavior (knee voltage ≈0.7 V, breakdown voltage ≈1.8 V) in the reduced graphene oxide-reduced BN oxide (RGO-RBNO) hybrid system is also observed. Band-gap tuning in MoS2 -BN system is observed. Simulations reveal stacking-dependent interfacial charge/potential drops, hinting at the feasibility of next-generation functional devices/sensors.
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Affiliation(s)
- Tumesh Kumar Sahu
- Department of PhysicsIndian Institute of Technology PatnaBihta CampusBihtaPatnaBihar801106India
- Department of PhysicsShri Ramdeo Baba College of Engineering and ManagementNagpurMaharashtra440013India
| | - Maithilee Motlag
- School of Industrial EngineeringPurdue UniversityWest LafayetteIN47907USA
| | | | - Nishant Kumar
- Department of PhysicsIndian Institute of Technology PatnaBihta CampusBihtaPatnaBihar801106India
| | - Gary J. Cheng
- School of Industrial EngineeringPurdue UniversityWest LafayetteIN47907USA
- Institute of Technological SciencesWuhan UniversityWuhan, Hubei430074China
- Birck Nanotechnology CentrePurdue UniversityWest LafayetteIN47907USA
| | - Prashant Kumar
- Department of PhysicsIndian Institute of Technology PatnaBihta CampusBihtaPatnaBihar801106India
- Birck Nanotechnology CentrePurdue UniversityWest LafayetteIN47907USA
- Global Innovation Centre for Advanced NanomaterialsThe University of NewcastleNewcastle2308Australia
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12
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Ho TA, Rosso KM, Criscenti LJ. Atomistic Mismatch Defines Energy-Structure Relationships during Oriented Attachment of Nanoparticles. J Phys Chem Lett 2022; 13:9339-9347. [PMID: 36179321 DOI: 10.1021/acs.jpclett.2c02511] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Oriented attachment is an important crystal growth pathway in nature and has been extensively exploited to develop hierarchically structured crystalline materials. Atomistic mismatch in the crystal structure of two particles in the solvent-separated state creates forces that drive particle motions enabling solvent expulsion and coalescence, but the relative magnitudes of the energy barriers for approach, rotation, and translation are not well-known. Here we use classical molecular simulations to calculate the potential of mean force for these three different motions for basal surface encounters of gibbsite nanoplatelets separated by one water layer. In all cases, the highest energy barrier is associated with removing this last water layer to enable jump to contact, even when coaligned. Mutual rotation is more probable than sliding motion, which are both much more probable than jump to contact. This work provides the first comparison on an equal footing of the energy-structure relationships for multiple alignment paths between solvent-separated particles in bulk aqueous solution.
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Affiliation(s)
- Tuan A Ho
- Geochemistry Department, Sandia National Laboratories, Albuquerque, New Mexico87185, United States
| | - Kevin M Rosso
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington99352, United States
| | - Louise J Criscenti
- Geochemistry Department, Sandia National Laboratories, Albuquerque, New Mexico87185, United States
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13
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Dai G, Chen X, Jing Y, Wang J. Anti-Symmetric Electromagnetic Interactions' Response in Electron Circular Dichroism and Chiral Origin of Periodic, Complementary Twisted Angle in Twisted Bilayer Graphene. MOLECULES (BASEL, SWITZERLAND) 2022; 27:molecules27196525. [PMID: 36235063 PMCID: PMC9572769 DOI: 10.3390/molecules27196525] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/13/2022] [Revised: 09/26/2022] [Accepted: 09/27/2022] [Indexed: 11/29/2022]
Abstract
Many novel physical properties of twisted bilayer graphene have been discovered and studied successively, but the physical mechanism of the chiral modulation of BLG by a twisted angle lacks theoretical research. In this work, the density functional theory, the wavefunction analysis of the excited state, and the quantum theory of atoms in molecules are used to calculate and analyze the anti-symmetric chiral characteristics of zigzag-edge twisted bilayer graphene quantum dots based on periodic complementary twisted angles. The analysis of the partial density of states shows that Moiré superlattices can effectively adjust the contribution of the atomic basis function of the fragment to the transition dipole moment. The topological analysis of electron density indicates that the Moiré superlattices structure can enhance the localization of the system, increasing the electron density of the Moiré central ring, reducing the electron surge capacity in general and inducing the reversed helical properties of the top and underlying graphene, which can be used as the origin of the chiral discrimination; it also reveals the mole in the superlattice chiral physical mechanism. On this basis, we will also study the nonlinear optical properties of twisted bilayer graphene based on a twisted angle.
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Affiliation(s)
- Guoqiang Dai
- College of Science, Liaoning Petrochemical University, Fushun 113001, China
| | - Xiangtao Chen
- School of Physics, Northeast Normal University, Changchun 130024, China
| | - Ying Jing
- College of Science, Liaoning Petrochemical University, Fushun 113001, China
- Correspondence: (Y.J.); (J.W.)
| | - Jingang Wang
- College of Science, Liaoning Petrochemical University, Fushun 113001, China
- Correspondence: (Y.J.); (J.W.)
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14
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Fatima K, Rafique M, Soomro AM, Kumar M. Activation of
h
‐BN and SiC monolayer sheets through foreign atom substitution; a comparative study based on ab‐initio method. J CHIN CHEM SOC-TAIP 2022. [DOI: 10.1002/jccs.202200266] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Kaneez Fatima
- Department of Electronic Engineering Mehran University of Engineering and Technology, SZAB, Campus Khairpur Mirs' Pakistan
| | - Muhammad Rafique
- Department of Electronic Engineering Mehran University of Engineering and Technology, SZAB, Campus Khairpur Mirs' Pakistan
| | - Amir Mahmood Soomro
- Department of Electrical Engineering Mehran University of Engineering and Technology Jamshoro Pakistan
| | - Mahesh Kumar
- Department of Electrical Engineering Mehran University of Engineering and Technology Jamshoro Pakistan
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15
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Ab Initio Study of Graphene/hBN Van der Waals Heterostructures: Effect of Electric Field, Twist Angles and p-n Doping on the Electronic Properties. NANOMATERIALS 2022; 12:nano12122118. [PMID: 35745456 PMCID: PMC9228424 DOI: 10.3390/nano12122118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/17/2022] [Revised: 06/10/2022] [Accepted: 06/16/2022] [Indexed: 11/17/2022]
Abstract
In this work, we study the structural and electronic properties of boron nitride bilayers sandwiched between graphene sheets. Different stacking, twist angles, doping, as well as an applied external gate voltage, are reported to induce important changes in the electronic band structure near the Fermi level. Small electronic lateral gaps of the order of few meV can appear near the Dirac points K. We further discuss how the bandstructures change applying a perpendicular external electric field, showing how its application lifts the degeneracy of the Dirac cones and, in the twisted case, moves their crossing points away from the Fermi energy. Then, we consider the possibility of co-doping, in an asymmetric way, the two external graphene layers. This is a situation that could be realized in heterostructures deposited on a substrate. We show that the co-doping acts as an effective external electric field, breaking the Dirac cones degeneracy. Finally, our work demonstrates how, by playing with field strength and p-n co-doping, it is possible to tune the small lateral gaps, pointing towards a possible application of C/BN sandwich structures as nano-optical terahertz devices.
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16
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Barman P, Upadhyay P, Rajarapu R, Yadav SK, K. V. P. L, N. M, Nayak PK. Twist-Dependent Tuning of Excitonic Emissions in Bilayer WSe 2. ACS OMEGA 2022; 7:6412-6418. [PMID: 35224402 PMCID: PMC8867584 DOI: 10.1021/acsomega.1c07219] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/22/2021] [Accepted: 01/28/2022] [Indexed: 06/14/2023]
Abstract
Monolayer (ML) transition metal dichalcogenides (TMDCs) have been rigorously studied to comprehend their rich spin and valley physics, exceptional optical properties, and ability to open new avenues in fundamental research and technology. However, intricate analysis of twisted homobilayer (t-BL) systems is highly required due to the intriguing twist angle (t-angle)-dependent interlayer effects on optical and electrical properties. Here, we report the evolution of the interlayer effect on artificially stacked BL WSe2, grown using chemical vapor deposition (CVD), with t-angle in the range of 0 ≤ θ ≤ 60°. Systematic analyses based on Raman and photoluminescence (PL) spectroscopies suggest intriguing deviations in the interlayer interactions, higher-energy exciton transitions (in the range of ∼1.6-1.7 eV), and stacking. In contrast to previous observations, we demonstrate a red shift in the PL spectra with t-angle. Density functional theory (DFT) is employed to understand the band-gap variations with t-angle. Exciton radiative lifetime has been estimated theoretically using temperature-dependent PL measurements, which shows an increase with t-angle that agrees with our experimental observations. This study presents the groundwork for further investigation of the evolution of various interlayer excitons and their dynamics with t-angle in homobilayer systems, critical for optoelectronic applications.
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Affiliation(s)
- Prahalad
Kanti Barman
- Department
of Physics, Indian Institute of Technology
Madras, Chennai 600 036, India
- 2D
Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai 600036, India
| | - Pranshoo Upadhyay
- Department
of Physics, Indian Institute of Technology
Madras, Chennai 600 036, India
- 2D
Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai 600036, India
| | - Ramesh Rajarapu
- Department
of Physics, Indian Institute of Technology
Madras, Chennai 600 036, India
- 2D
Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai 600036, India
| | - Sharad Kumar Yadav
- Department
of Physics, Indian Institute of Technology
Madras, Chennai 600 036, India
- Micro
Nano and Bio-Fluidics Group, Indian Institute
of Technology Madras, Chennai 600036, India
| | - Latha K. V. P.
- Department
of Physics, Pondicherry University, Pondicherry 605014, India
| | - Meenakshisundaram N.
- Department
of Physics, Vivekananda College, Tiruvedakam West, Madurai 625234, India
| | - Pramoda K. Nayak
- Department
of Physics, Indian Institute of Technology
Madras, Chennai 600 036, India
- 2D
Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai 600036, India
- Micro
Nano and Bio-Fluidics Group, Indian Institute
of Technology Madras, Chennai 600036, India
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17
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González JW. Strain-controlled thermoelectric properties of phosphorene-carbon monosulfide hetero-bilayers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:065301. [PMID: 34736227 DOI: 10.1088/1361-648x/ac368f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2021] [Accepted: 11/04/2021] [Indexed: 06/13/2023]
Abstract
The application of strain to 2D materials allows manipulating the electronic, magnetic, and thermoelectric properties. These physical properties are sensitive to slight variations induced by tensile and compressive strain and the uniaxial strain direction. Herein, we take advantage of the reversible semiconductor-metal transition observed in certain monolayers to propose a hetero-bilayer device. We propose to pill up phosphorene (layered black phosphorus) and carbon monosulfide monolayers. In the first, such transition appears for positive strain, while the second appears for negative strain. Our first-principle calculations show that depending on the direction of the applied uniaxial strain; it is possible to achieve reversible control in the layer that behaves as an electronic conductor while the other layer remains as a thermal conductor. The described strain-controlled selectivity could be used in the design of novel devices.
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Affiliation(s)
- J W González
- Departamento de Física, Universidad Técnica Federico Santa María, Casilla Postal 110V, Valparaíso, Chile
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18
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Anichini C, Samorì P. Graphene-Based Hybrid Functional Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100514. [PMID: 34174141 DOI: 10.1002/smll.202100514] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2021] [Revised: 02/24/2021] [Indexed: 06/13/2023]
Abstract
Graphene is a 2D material combining numerous outstanding physical properties, including high flexibility and strength, extremely high thermal conductivity and electron mobility, transparency, etc., which make it a unique testbed to explore fundamental physical phenomena. Such physical properties can be further tuned by combining graphene with other nanomaterials or (macro)molecules to form hybrid functional materials, which by design can display not only the properties of the individual components but also exhibit new properties and enhanced characteristics arising from the synergic interaction of the components. The implementation of the hybrid approach to graphene also allows boosting the performances in a multitude of technological applications. This review reports the hybrids formed by graphene combined with other low-dimensional nanomaterials of diverse dimensionality (0D, 1D, and 2D) and (macro)molecules, with emphasis on the synthetic methods. The most important applications of these hybrids in the fields of sensing, water purification, energy storage, biomedical, (photo)catalysis, and opto(electronics) are also reviewed, with a special focus on the superior performances of these hybrids compared to the individual, nonhybridized components.
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Affiliation(s)
- Cosimo Anichini
- Université de Strasbourg, CNRS, ISIS, 8 alleé Gaspard Monge, Strasbourg, 67000, France
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS, 8 alleé Gaspard Monge, Strasbourg, 67000, France
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19
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Desai P, Todankar B, Ranade AK, Kondo M, Dewa T, Tanemura M, Kalita G. Synthesis of MoS
2
Layers on GaN Using Ammonium Tetrathiomolybdate for Heterojunction Device Applications. CRYSTAL RESEARCH AND TECHNOLOGY 2021. [DOI: 10.1002/crat.202000198] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Pradeep Desai
- Department of Physical Science and Engineering Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
| | - Bhagyashri Todankar
- Department of Physical Science and Engineering Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
| | - Ajinkya K. Ranade
- Department of Physical Science and Engineering Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
| | - Masaharu Kondo
- Department of Life Science and Applied Chemistry Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
| | - Takehisa Dewa
- Department of Life Science and Applied Chemistry Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
| | - Masaki Tanemura
- Department of Physical Science and Engineering Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
| | - Golap Kalita
- Department of Physical Science and Engineering Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
- Frontier Research Institute for Material Science Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
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20
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Chen Q, Yin Y, Ren F, Liang M, Yi X, Liu Z. Van der Waals Epitaxy of III-Nitrides and Its Applications. MATERIALS 2020; 13:ma13173835. [PMID: 32878046 PMCID: PMC7503271 DOI: 10.3390/ma13173835] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/15/2020] [Revised: 08/22/2020] [Accepted: 08/25/2020] [Indexed: 12/03/2022]
Abstract
III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdWE) has been proven to be a useful route to relax the requirements of lattice mismatch and thermal mismatch between the nitride epilayers and the substrates. By using vdWE, the stress in the epilayer can be sufficiently relaxed, and the epilayer can be easily exfoliated and transferred, which provides opportunities for novel device design and fabrication. In this paper, we review and discuss the important progress on the researches of nitrides vdWE. The potential applications of nitride vdWE are also prospected.
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Affiliation(s)
- Qi Chen
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (Q.C.); (Y.Y.); (F.R.); (M.L.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
| | - Yue Yin
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (Q.C.); (Y.Y.); (F.R.); (M.L.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
| | - Fang Ren
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (Q.C.); (Y.Y.); (F.R.); (M.L.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
| | - Meng Liang
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (Q.C.); (Y.Y.); (F.R.); (M.L.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
| | - Xiaoyan Yi
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (Q.C.); (Y.Y.); (F.R.); (M.L.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
- Correspondence: (X.Y.); (Z.L.); Tel.: +86-010-8230-5423 (Z.L.)
| | - Zhiqiang Liu
- Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (Q.C.); (Y.Y.); (F.R.); (M.L.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
- Correspondence: (X.Y.); (Z.L.); Tel.: +86-010-8230-5423 (Z.L.)
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21
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Biosynthesis of NiO Nanoparticles Using Soursop (Annona muricata L.) Fruit Peel Green Waste and Their Photocatalytic Performance on Crystal Violet Dye. J CLUST SCI 2020. [DOI: 10.1007/s10876-020-01859-8] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
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22
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Ma B, Martín C, Kurapati R, Bianco A. Degradation-by-design: how chemical functionalization enhances the biodegradability and safety of 2D materials. Chem Soc Rev 2020; 49:6224-6247. [PMID: 32724940 DOI: 10.1039/c9cs00822e] [Citation(s) in RCA: 43] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
Abstract
A large number of graphene and other 2D materials are currently used for the development of new technologies, increasingly entering different industrial sectors. Interrogating the impact of such 2D materials on health and environment is crucial for both modulating their potential toxicity in living organisms and eliminating them from the environment. In this context, understanding if 2D materials are bio-persistent is mandatory. In this review we describe the importance of biodegradability and decomposition of 2D materials. We initially cover the biodegradation of graphene family materials, followed by other emerging classes of 2D materials including transition metal dichalcogenides and oxides, Xenes, Mxenes and other non-metallic 2D materials. We explain the role of defects and functional groups, introduced onto the surface of the materials during their preparation, and the consequences of chemical functionalization on biodegradability. In strong relation to the chemistry on 2D materials, we describe the concept of "degradation-by-design" that we contributed to develop, and which concerns the covalent modification with appropriate molecules to enhance the biodegradability of 2D materials. Finally, we cover the importance of designing new biodegradable 2D conjugates and devices for biomedical applications as drug delivery carriers, in bioelectronics, and tissue engineering. We would like to highlight that the biodegradation of 2D materials mainly depends on the type of material, the chemical functionalization, the aqueous dispersibility and the redox potentials of the different oxidative environments. Biodegradation is one of the necessary conditions for the safe application of 2D materials. Therefore, we hope that this review will help to better understand their biodegradation processes, and will stimulate the chemists to explore new chemical strategies to design safer products, composites and devices containing 2D materials.
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Affiliation(s)
- Baojin Ma
- CNRS, Immunology, Immunopathology and Therapeutic Chemistry, UPR 3572, University of Strasbourg, ISIS, 67000 Strasbourg, France.
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23
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Cai Q, Gan W, Falin A, Watanabe K, Taniguchi T, Zhuang J, Hao W, Huang S, Tao T, Chen Y, Li LH. Two-Dimensional Van der Waals Heterostructures for Synergistically Improved Surface-Enhanced Raman Spectroscopy. ACS APPLIED MATERIALS & INTERFACES 2020; 12:21985-21991. [PMID: 32319287 DOI: 10.1021/acsami.0c01157] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Surface-enhanced Raman spectroscopy (SERS) is a precise and noninvasive analytical technique that is widely used in chemical analysis, environmental protection, food processing, pharmaceutics, and diagnostic biology. However, it is still a challenge to produce highly sensitive and reusable SERS substrates with a minimum fluorescence background. In this work, we propose the use of van der Waals heterostructures of two-dimensional materials to cover plasmonic metal nanoparticles to solve this challenge. The heterostructures of atomically thin boron nitride (BN) and graphene provide synergistic effects: (1) electrons could tunnel through the atomically thin BN, allowing the charge transfer between graphene and probe molecules to suppress the fluorescence background; (2) the SERS sensitivity is enhanced by graphene via a chemical enhancement mechanism in addition to an electromagnetic field mechanism; and (3) the atomically thin BN protects the underlying graphene and Ag nanoparticles from oxidation during heating for regeneration at 360 °C in the air so that the SERS substrates could be reused. These advances will facilitate wider applications of SERS especially on the detection of fluorescent molecules with higher sensitivity.
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Affiliation(s)
- Qiran Cai
- Institute for Frontier Materials, Deakin University, Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Wei Gan
- Institute for Frontier Materials, Deakin University, Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Alexey Falin
- Institute for Frontier Materials, Deakin University, Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
- Dongguan South China Design Innovation Institute, Dongguan 523808, China
| | - Kenji Watanabe
- National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Jincheng Zhuang
- BUAA-UOW Joint Research Centre and School of Physics, Beihang University, Beijing 100191, China
| | - Weichang Hao
- BUAA-UOW Joint Research Centre and School of Physics, Beihang University, Beijing 100191, China
| | - Shaoming Huang
- Guangzhou Key Laboratory of Low Dimensional Materials & Energy Storage Devices, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
| | - Tao Tao
- Dongguan South China Design Innovation Institute, Dongguan 523808, China
- Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
| | - Ying Chen
- Institute for Frontier Materials, Deakin University, Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Lu Hua Li
- Institute for Frontier Materials, Deakin University, Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
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24
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Yao Y, Ye Z, Huang F, Zeng X, Zhang T, Shang T, Han M, Zhang W, Ren L, Sun R, Xu JB, Wong CP. Achieving Significant Thermal Conductivity Enhancement via an Ice-Templated and Sintered BN-SiC Skeleton. ACS APPLIED MATERIALS & INTERFACES 2020; 12:2892-2902. [PMID: 31860260 DOI: 10.1021/acsami.9b19280] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Conventional polymer composites normally suffer from undesired thermal conductivity enhancement which has hampered the development of modern electronics as they face a stricter heat dissipating requirement. It is still challenging to achieve satisfactory thermal conductivity enhancement with reasonable mechanical properties. Herein, we present a three-dimensional (3D), lightweight, and mechanically strong boron nitride (BN)-silicon carbide (SiC) skeleton with aligned thermal pathways via the combination of ice-templated assembly and high-temperature sintering. The sintering has introduced atomic-level coupling at the BN-SiC junction which contributes to efficient phonon transport via the newly formed borosilicate glass BCxN3-x (0 ≤ x ≤ 3) and SiCxN4-x (0 ≤ x ≤ 4) phases, leading to much lower interfacial thermal resistance. Thus, the obtained BN-SiC skeleton shows satisfactory thermal performance. The prepared 3D BN-SiC/polydimethylsiloxane (PDMS) composites exhibit a maximum through-plane thermal conductivity of 3.87 W·m-1·K-1 at a filler loading of only 8.35 vol %. The thermal conductivity enhancement efficiency reaches 220% per 1 vol % filler when compared to pure PDMS matrix, superior to other reported BN skeleton-based composites. The feature of our strategy is to allow the oriented three-dimensional skeleton to be strongly bonded by a sintered ceramic phase instead of polymer-like adhesive, namely, to improve the intrinsic thermal conductivity of the skeleton to the greatest extent. This strategy can be applied to develop novel thermal management materials that are lightweight and mechanically tough that rapidly transfer heat. It represents a new avenue to addressing the heat challenges in traditional electronic products.
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Affiliation(s)
- Yimin Yao
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
- Department of Electronics Engineering , The Chinese University of Hong Kong , Shatin, N.T. , Hong Kong 999077 , China
| | - Zhenqiang Ye
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
| | - Feiyang Huang
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
| | - Xiaoliang Zeng
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
| | - Tao Zhang
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
| | - Tianyu Shang
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
- Department of Nano Science and Technology Institute , University of Science and Technology of China , Suzhou 215123 , China
| | - Meng Han
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
| | - Weilin Zhang
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
| | - Linlin Ren
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
| | - Rong Sun
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
| | - Jian-Bin Xu
- Department of Electronics Engineering , The Chinese University of Hong Kong , Shatin, N.T. , Hong Kong 999077 , China
| | - Ching-Ping Wong
- School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
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25
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Sangalli D, Ferretti A, Miranda H, Attaccalite C, Marri I, Cannuccia E, Melo P, Marsili M, Paleari F, Marrazzo A, Prandini G, Bonfà P, Atambo MO, Affinito F, Palummo M, Molina-Sánchez A, Hogan C, Grüning M, Varsano D, Marini A. Many-body perturbation theory calculations using the yambo code. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:325902. [PMID: 30943462 DOI: 10.1088/1361-648x/ab15d0] [Citation(s) in RCA: 86] [Impact Index Per Article: 17.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
yambo is an open source project aimed at studying excited state properties of condensed matter systems from first principles using many-body methods. As input, yambo requires ground state electronic structure data as computed by density functional theory codes such as Quantum ESPRESSO and Abinit. yambo's capabilities include the calculation of linear response quantities (both independent-particle and including electron-hole interactions), quasi-particle corrections based on the GW formalism, optical absorption, and other spectroscopic quantities. Here we describe recent developments ranging from the inclusion of important but oft-neglected physical effects such as electron-phonon interactions to the implementation of a real-time propagation scheme for simulating linear and non-linear optical properties. Improvements to numerical algorithms and the user interface are outlined. Particular emphasis is given to the new and efficient parallel structure that makes it possible to exploit modern high performance computing architectures. Finally, we demonstrate the possibility to automate workflows by interfacing with the yambopy and AiiDA software tools.
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Affiliation(s)
- D Sangalli
- Istituto di Struttura della Materia-Consiglio Nazionale delle Ricerche (CNR-ISM), Division of Ultrafast Processes in Materials (FLASHit), Via Salaria Km 29.5, CP 10, I-00016 Monterotondo Stazione, Italy. European Theoretical Spectroscopy Facility (ETSF
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26
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Wang M, Zhang T, Mao D, Yao Y, Zeng X, Ren L, Cai Q, Mateti S, Li LH, Zeng X, Du G, Sun R, Chen Y, Xu JB, Wong CP. Highly Compressive Boron Nitride Nanotube Aerogels Reinforced with Reduced Graphene Oxide. ACS NANO 2019; 13:7402-7409. [PMID: 31203604 DOI: 10.1021/acsnano.9b03225] [Citation(s) in RCA: 40] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Boron nitride nanotubes (BNNTs), structural analogues of carbon nanotubes, have attracted significant attention due to their superb thermal conductivity, wide bandgap, excellent hydrogen storage capacity, and thermal and chemical stability. Despite considerable progress in the preparation and surface functionalization of BNNTs, it remains a challenge to assemble one-dimensional BNNTs into three-dimensional (3D) architectures (such as aerogels) for practical applications. Here, we report a highly compressive BNNT aerogel reinforced with reduced graphene oxide (rGO) fabricated using a freeze-drying method. The reinforcement effect of rGO and 3D honeycomb-like framework offer the BNNTs/rGO aerogel with a high compression resilience. The BNNTs/rGO aerogels were then infiltrated with polyethylene glycol to prepare a kind of phase change materials. The prepared phase change material composites show zero leakage even at 100 °C and enhanced thermal conductivity, due to the 3D porous structure of the BNNTs/rGO aerogel. This work provides a simple method for the preparation of 3D BNNTs/rGO aerogels for many potential applications, such as high-performance polymer composites.
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Affiliation(s)
- Mingmei Wang
- Shenzhen Institute of Advanced Electronic Materials - Shenzhen Fundamental Research Institutions , Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
- School of Materials Science and Engineering , Nanchang University , Nanchang 330031 , China
| | - Tao Zhang
- Shenzhen Institute of Advanced Electronic Materials - Shenzhen Fundamental Research Institutions , Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
| | - Dasha Mao
- Shenzhen Institute of Advanced Electronic Materials - Shenzhen Fundamental Research Institutions , Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
- Shenzhen College of Advanced Technology, University of Chinese Academy of Sciences , Shenzhen 518055 , China
| | - Yimin Yao
- Shenzhen Institute of Advanced Electronic Materials - Shenzhen Fundamental Research Institutions , Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
- Shenzhen College of Advanced Technology, University of Chinese Academy of Sciences , Shenzhen 518055 , China
| | - Xiangliang Zeng
- Shenzhen Institute of Advanced Electronic Materials - Shenzhen Fundamental Research Institutions , Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
- School of Materials Science and Engineering , Nanchang University , Nanchang 330031 , China
| | - Linlin Ren
- Shenzhen Institute of Advanced Electronic Materials - Shenzhen Fundamental Research Institutions , Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
| | - Qiran Cai
- Institute for Frontier Materials , Deakin University , Waurn Ponds , Victoria 3216 , Australia
| | - Srikanth Mateti
- Institute for Frontier Materials , Deakin University , Waurn Ponds , Victoria 3216 , Australia
| | - Lu Hua Li
- Institute for Frontier Materials , Deakin University , Waurn Ponds , Victoria 3216 , Australia
| | - Xiaoliang Zeng
- Shenzhen Institute of Advanced Electronic Materials - Shenzhen Fundamental Research Institutions , Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
| | - Guoping Du
- School of Materials Science and Engineering , Nanchang University , Nanchang 330031 , China
| | - Rong Sun
- Shenzhen Institute of Advanced Electronic Materials - Shenzhen Fundamental Research Institutions , Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , China
| | - Ying Chen
- Institute for Frontier Materials , Deakin University , Waurn Ponds , Victoria 3216 , Australia
| | - Jian-Bin Xu
- Department of Electronics Engineering , The Chinese University of Hong Kong , Hong Kong 999077 , China
| | - Ching-Ping Wong
- School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
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27
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Latini S, Ronca E, De Giovannini U, Hübener H, Rubio A. Cavity Control of Excitons in Two-Dimensional Materials. NANO LETTERS 2019; 19:3473-3479. [PMID: 31046291 PMCID: PMC6674266 DOI: 10.1021/acs.nanolett.9b00183] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2019] [Revised: 04/30/2019] [Indexed: 05/04/2023]
Abstract
We propose a robust and efficient way of controlling the optical spectra of two-dimensional materials and van der Waals heterostructures by quantum cavity embedding. The cavity light-matter coupling leads to the formation of exciton-polaritons, a superposition of photons and excitons. Our first-principles study demonstrates a reordering and mixing of bright and dark excitons spectral features and in the case of a type II van-der-Waals heterostructure an inversion of intra- and interlayer excitonic resonances. We further show that the cavity light-matter coupling strongly depends on the dielectric environment and can be controlled by encapsulating the active two-dimensional (2D) crystal in another dielectric material. Our theoretical calculations are based on a newly developed nonperturbative many-body framework to solve the coupled electron-photon Schrödinger equation in a quantum-electrodynamical extension of the Bethe-Salpeter approach. This approach enables the ab initio simulations of exciton-polariton states and their dispersion from weak to strong cavity light-matter coupling regimes. Our method is then extended to treat van der Waals heterostructures and encapsulated 2D materials using a simplified Mott-Wannier description of the excitons that can be applied to very large systems beyond reach for fully ab initio approaches.
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Affiliation(s)
- Simone Latini
- Max
Planck Institute for the Structure and Dynamics of Matter, Luruper Chaussee 149, 22761 Hamburg, Germany
- Center
for Free-Electron Laser Science and Department of Physics, University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany
| | - Enrico Ronca
- Max
Planck Institute for the Structure and Dynamics of Matter, Luruper Chaussee 149, 22761 Hamburg, Germany
- Center
for Free-Electron Laser Science and Department of Physics, University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany
| | - Umberto De Giovannini
- Max
Planck Institute for the Structure and Dynamics of Matter, Luruper Chaussee 149, 22761 Hamburg, Germany
- Center
for Free-Electron Laser Science and Department of Physics, University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany
- Dipartimento
di Fisica e Chimica, Universitá degli
Studi di Palermo, Via
Archirafi 36, I-90123, Palermo, Italy
| | - Hannes Hübener
- Max
Planck Institute for the Structure and Dynamics of Matter, Luruper Chaussee 149, 22761 Hamburg, Germany
- Center
for Free-Electron Laser Science and Department of Physics, University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany
| | - Angel Rubio
- Max
Planck Institute for the Structure and Dynamics of Matter, Luruper Chaussee 149, 22761 Hamburg, Germany
- Center
for Free-Electron Laser Science and Department of Physics, University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany
- Center
for Computational Quantum Physics (CCQ), The Flatiron Institute, 162 Fifth Avenue, New York, New York 10010, United
States
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28
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Zhang X, Sun Y, Gao W, Lin Y, Zhao X, Wang Q, Yao X, He M, Ye X, Liu Y. Sizable bandgaps of graphene in 3d transition metal intercalated defective graphene/WSe 2 heterostructures. RSC Adv 2019; 9:18157-18164. [PMID: 35515222 PMCID: PMC9064658 DOI: 10.1039/c9ra03034d] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/24/2019] [Accepted: 05/29/2019] [Indexed: 11/21/2022] Open
Abstract
Controlling the electronic and magnetic properties of G/TMD (graphene on transition metal dichalcogenide) heterostructures is essential to develop electronic devices. Despite extensive studies in perfecting G/TMDs, most products have various defects due to the limitations of the fabrication techniques, and research investigating the performances of defective G/TMDs is scarce. Here, we conduct a comprehensive study of the effects of 3d transition metal (TM = Sc–Ni) atom-intercalated G/WSe2 heterostructures, as well as their defective configurations having single vacancies on graphene or WSe2 sublayers. Interestingly, Ni-intercalated G/WSe2 exhibits a small band gap of 0.06 eV, a typical characteristic of nonmagnetic semiconductors. With the presence of one single vacancy in graphene, nonmagnetic (or ferromagnetic) semiconductors with sizable band gaps, 0.10–0.51 eV, can be achieved by intercalating Ti, Cr, Fe and Ni atoms into the heterostructures. Moreover, V and Mn doped non-defective and Sc, V, Co doped defective G/WSe2 can lead to sizable half metallic band gaps of 0.1–0.58 eV. Further analysis indicates that the significant electron transfer from TM atoms to graphene accounts for the opening of a large band gap. Our results provide theoretical guidance to future applications of G/TMD based heterostructures in (spin) electronic devices. 3d transition metal (TM = Sc–Ni) atom-intercalated G/WSe2 heterostructures, as well as their defective configurations having single vacancies on graphene or WSe2 sublayers, are studied.![]()
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Affiliation(s)
- Xiuyun Zhang
- College of Physics Science and Technology, Yangzhou University Yangzhou 225002 China
| | - Yi Sun
- College of Physics Science and Technology, Yangzhou University Yangzhou 225002 China
| | - Weicheng Gao
- College of Physics Science and Technology, Yangzhou University Yangzhou 225002 China
| | - Yin Lin
- College of Physics Science and Technology, Yangzhou University Yangzhou 225002 China
| | - Xinli Zhao
- College of Physics Science and Technology, Yangzhou University Yangzhou 225002 China
| | - Qiang Wang
- College of Physics Science and Technology, Yangzhou University Yangzhou 225002 China
| | - Xiaojing Yao
- College of Physics and Information Engineering, Hebei Advanced Thin Films Laboratory, Hebei Normal University Shijiazhuang 050024 China
| | - Maoshuai He
- Key Laboratory of Eco-Chemical Engineering, Ministry of Education, Taishan Scholar Advantage and Characteristic Discipline Team of Eco Chemical Process and Technology, College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology Qingdao 266042 China
| | - Xiaoshan Ye
- College of Physics Science and Technology, Yangzhou University Yangzhou 225002 China
| | - Yongjun Liu
- College of Physics Science and Technology, Yangzhou University Yangzhou 225002 China
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29
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Nayak PK. Pulsed-grown graphene for flexible transparent conductors. NANOSCALE ADVANCES 2019; 1:1215-1223. [PMID: 36133212 PMCID: PMC9419159 DOI: 10.1039/c8na00181b] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2018] [Accepted: 01/01/2019] [Indexed: 06/13/2023]
Abstract
In the race to find novel transparent conductors for next-generation optoelectronic devices, graphene is supposed to be one of the leading candidates, as it has the potential to satisfy all future requirements. However, the use of graphene as a truly transparent conductor remains a great challenge because its lowest sheet resistance demonstrated so far exceeds that of the commercially available indium tin oxide. The possible cause of low conductivity lies in its intrinsic growth process, which requires further exploration. In this work, I have approached this problem by controlling graphene nucleation during the chemical vapor deposition process as well as by adopting three distinct procedures, including bis(trifluoromethanesulfonyl)amide doping, post annealing, and flattening of graphene films. Additionally, van der Waals stacked graphene layers have been prepared to reduce the sheet resistance effectively. I have demonstrated an efficient and flexible transparent conductor with the extremely low sheet resistance of 40 Ω sq-1, high transparency (T r ∼90%), and high mechanical flexibility, making it suitable for electrode materials in future optoelectronic devices.
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Affiliation(s)
- Pramoda K Nayak
- Department of Physics, Indian Institute of Technology Madras Chennai 600036 India
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30
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Rao CNR, Pramoda K. Borocarbonitrides, BxCyNz, 2D Nanocomposites with Novel Properties. BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN 2019. [DOI: 10.1246/bcsj.20180335] [Citation(s) in RCA: 133] [Impact Index Per Article: 26.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Affiliation(s)
- C. N. R. Rao
- School of Advanced Materials, International Centre for Material Science and New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P. O., Bangalore 560064, India
| | - K. Pramoda
- School of Advanced Materials, International Centre for Material Science and New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P. O., Bangalore 560064, India
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31
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Meng J, Wang D, Cheng L, Gao M, Zhang X. Recent progress in synthesis, properties, and applications of hexagonal boron nitride-based heterostructures. NANOTECHNOLOGY 2019; 30:074003. [PMID: 30523895 DOI: 10.1088/1361-6528/aaf301] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Featuring an absence of dangling bonds, large band gap, low dielectric constant, and excellent chemical inertness, atomically thin hexagonal boron nitride (h-BN) is considered an ideal candidate for integration with graphene and other 2D materials. During the past years, great efforts have been devoted to the research of h-BN-based heterostructures, from fundamental study to practical applications. In this review we summarize the recent progress in the synthesis, novel properties, and potential applications of h-BN-based heterostructures, especially the synthesis technique. Firstly, various approaches to the preparation of both in-plane and vertically stacked h-BN-based heterostructures are introduced in detail, including top-down strategies associated with exfoliation transfer processes and bottom-up strategies such as chemical vapor deposition (CVD)-based growth. Secondly, we discuss some novel properties arising in these heterostructures. Several promising applications in electronic and optoelectronic devices are also reviewed. Finally, we discuss the main challenges and possible research directions in this field.
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Affiliation(s)
- Junhua Meng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 & College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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32
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Zhang C, Huang H, Ni X, Zhou Y, Kang L, Jiang W, Chen H, Zhong J, Liu F. Band gap reduction in van der Waals layered 2D materials via a de-charge transfer mechanism. NANOSCALE 2018; 10:16759-16764. [PMID: 30156239 DOI: 10.1039/c8nr04660c] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
A thickness dependent band gap is commonly found in layered two-dimensional (2D) materials. Here, using a C3N bilayer as a prototypical model, we systematically investigated the evolution of a band gap from a single layer to a bilayer using first principles calculations and tight binding modeling. We show that in addition to the widely known effect of interlayer hopping, de-charge transfer also plays an important role in tuning the band gap. The de-charge transfer is defined with reference to the charge states of atoms in the single layer without stacking, which shifts the energy level and modifies the band gap. Together with band edge splitting induced by the interlayer hopping, the energy level shifting caused by the de-charge transfer determines the size of the band gap in bilayer C3N. Our finding, applicable to other 2D semiconductors, provides an alternative approach for realizing band gap engineering in 2D materials.
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Affiliation(s)
- Chunxiao Zhang
- Hunan Provincial Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105, People's Republic of China.
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33
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Wang S, Ma F, Jiang H, Shao Y, Wu Y, Hao X. Band gap-Tunable Porous Borocarbonitride Nanosheets for High Energy-Density Supercapacitors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:19588-19597. [PMID: 29775049 DOI: 10.1021/acsami.8b02317] [Citation(s) in RCA: 27] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Band gap-tunable porous borocarbonitride (BCN) nanosheets were successfully fabricated with cheap and readily available precursors by annealing and exfoliating. The band gap of the as-prepared BCN materials ranges from 5.5 to 1.0 eV; these samples exhibit beneficial structural features suitable for the application in supercapacitors. Especially, the BCN material with a band gap of 1.0 eV exhibits a great specific surface area (600.9 m2 g-1), massive active sites, and excellent conductivity (10.8 S m-1). In addition, this example displays great specific capacitance (464.5 F g-1), excellent cycle stability (98.5% performance retention after 10 000 cycles), and ultrahigh energy density (50.4 W h kg-1, in 1 M Et4NBF4 electrolyte). This excellent electrochemical performance and facile effective synthesis of band gap-tunable BCN materials will provide a promising strategy for configuring nanostructured multiple compound electrodes for other energy storage and conversion devices.
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Affiliation(s)
- Shouzhi Wang
- State Key Lab of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Fukun Ma
- State Key Lab of Crystal Materials , Shandong University , Jinan 250100 , China
- School of Materials Science and Engineering , Shandong Jianzhu University , Jinan 250100 , China
| | - Hehe Jiang
- State Key Lab of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Yongliang Shao
- State Key Lab of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Yongzhong Wu
- State Key Lab of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Xiaopeng Hao
- State Key Lab of Crystal Materials , Shandong University , Jinan 250100 , China
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34
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Yao Y, Sun J, Zeng X, Sun R, Xu JB, Wong CP. Construction of 3D Skeleton for Polymer Composites Achieving a High Thermal Conductivity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1704044. [PMID: 29392850 DOI: 10.1002/smll.201704044] [Citation(s) in RCA: 91] [Impact Index Per Article: 15.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2017] [Revised: 12/12/2017] [Indexed: 05/16/2023]
Abstract
Owing to the growing heat removal issue in modern electronic devices, electrically insulating polymer composites with high thermal conductivity have drawn much attention during the past decade. However, the conventional method to improve through-plane thermal conductivity of these polymer composites usually yields an undesired value (below 3.0 Wm-1 K-1 ). Here, construction of a 3D phonon skeleton is reported composed of stacked boron nitride (BN) platelets reinforced with reduced graphene oxide (rGO) for epoxy composites by the combination of ice-templated and infiltrating methods. At a low filler loading of 13.16 vol%, the resulting 3D BN-rGO/epoxy composites exhibit an ultrahigh through-plane thermal conductivity of 5.05 Wm-1 K-1 as the best thermal-conduction performance reported so far for BN sheet-based composites. Theoretical models qualitatively demonstrate that this enhancement results from the formation of phonon-matching 3D BN-rGO networks, leading to high rates of phonon transport. The strong potential application for thermal management has been demonstrated by the surface temperature variations of the composites with time during heating and cooling.
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Affiliation(s)
- Yimin Yao
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
- Shenzhen College of Advanced Technology, University of Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Jiajia Sun
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
- Department of Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, China
| | - Xiaoliang Zeng
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Rong Sun
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Jian-Bin Xu
- Department of Electronics Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, 999077, China
| | - Ching-Ping Wong
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
- Department of Electronics Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, 999077, China
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
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35
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Bawari S, Kaley NM, Pal S, Vineesh TV, Ghosh S, Mondal J, Narayanan TN. On the hydrogen evolution reaction activity of graphene–hBN van der Waals heterostructures. Phys Chem Chem Phys 2018; 20:15007-15014. [DOI: 10.1039/c8cp01020j] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
This work demonstrates the hydrogen evolution reaction from graphene–hBN van der Waals structures, where individual layers are inert towards this reaction.
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Affiliation(s)
- Sumit Bawari
- Tata Institute of Fundamental Research – Hyderabad
- Hyderabad – 500 107
- India
| | - Nisheal M. Kaley
- Tata Institute of Fundamental Research – Hyderabad
- Hyderabad – 500 107
- India
| | - Shubhadeep Pal
- Tata Institute of Fundamental Research – Hyderabad
- Hyderabad – 500 107
- India
| | | | - Shamasree Ghosh
- Tata Institute of Fundamental Research – Hyderabad
- Hyderabad – 500 107
- India
| | - Jagannath Mondal
- Tata Institute of Fundamental Research – Hyderabad
- Hyderabad – 500 107
- India
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36
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Bordes É, Szala-Bilnik J, Pádua AAH. Exfoliation of graphene and fluorographene in molecular and ionic liquids. Faraday Discuss 2018; 206:61-75. [DOI: 10.1039/c7fd00169j] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/10/2023]
Abstract
We use molecular dynamics simulations to study the exfoliation of graphene and fluorographene in molecular and ionic liquids using computer experiments in which one layer of the 2D nanomaterial is peeled, in vacuum or with solvent present.
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Affiliation(s)
- Émilie Bordes
- Institute of Chemistry of Clermont-Ferrand
- Université Clermont Auvergne
- CNRS
- 63000 Clermont-Ferrand
- France
| | - Joanna Szala-Bilnik
- Institute of Chemistry of Clermont-Ferrand
- Université Clermont Auvergne
- CNRS
- 63000 Clermont-Ferrand
- France
| | - Agílio A. H. Pádua
- Institute of Chemistry of Clermont-Ferrand
- Université Clermont Auvergne
- CNRS
- 63000 Clermont-Ferrand
- France
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37
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Deposition of topological silicene, germanene and stanene on graphene-covered SiC substrates. Sci Rep 2017; 7:15700. [PMID: 29146916 PMCID: PMC5691050 DOI: 10.1038/s41598-017-15610-3] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2017] [Accepted: 10/30/2017] [Indexed: 11/09/2022] Open
Abstract
Growth of X-enes, such as silicene, germanene and stanene, requires passivated substrates to ensure the survival of their exotic properties. Using first-principles methods, we study as-grown graphene on polar SiC surfaces as suitable substrates. Trilayer combinations with coincidence lattices with large hexagonal unit cells allow for strain-free group-IV monolayers. In contrast to the Si-terminated SiC surface, van der Waals-bonded honeycomb X-ene/graphene bilayers on top of the C-terminated SiC substrate are stable. Folded band structures show Dirac cones of the overlayers with small gaps of about 0.1 eV in between. The topological invariants of the peeled-off X-ene/graphene bilayers indicate the presence of topological character and the existence of a quantum spin Hall phase.
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38
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Carey T, Cacovich S, Divitini G, Ren J, Mansouri A, Kim JM, Wang C, Ducati C, Sordan R, Torrisi F. Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics. Nat Commun 2017; 8:1202. [PMID: 29089495 PMCID: PMC5663939 DOI: 10.1038/s41467-017-01210-2] [Citation(s) in RCA: 148] [Impact Index Per Article: 21.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/16/2017] [Accepted: 08/30/2017] [Indexed: 11/08/2022] Open
Abstract
Fully printed wearable electronics based on two-dimensional (2D) material heterojunction structures also known as heterostructures, such as field-effect transistors, require robust and reproducible printed multi-layer stacks consisting of active channel, dielectric and conductive contact layers. Solution processing of graphite and other layered materials provides low-cost inks enabling printed electronic devices, for example by inkjet printing. However, the limited quality of the 2D-material inks, the complexity of the layered arrangement, and the lack of a dielectric 2D-material ink able to operate at room temperature, under strain and after several washing cycles has impeded the fabrication of electronic devices on textile with fully printed 2D heterostructures. Here we demonstrate fully inkjet-printed 2D-material active heterostructures with graphene and hexagonal-boron nitride (h-BN) inks, and use them to fabricate all inkjet-printed flexible and washable field-effect transistors on textile, reaching a field-effect mobility of ~91 cm2 V-1 s-1, at low voltage (<5 V). This enables fully inkjet-printed electronic circuits, such as reprogrammable volatile memory cells, complementary inverters and OR logic gates.
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Affiliation(s)
- Tian Carey
- Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK
| | - Stefania Cacovich
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage road, Cambridge, CB3 0FS, UK
| | - Giorgio Divitini
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage road, Cambridge, CB3 0FS, UK
| | - Jiesheng Ren
- Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK
- Key Laboratory of Eco-Textile, Ministry of Education, School of Textiles and Clothing, Jiangnan University, 214122, Wuxi, China
| | - Aida Mansouri
- L-NESS, Department of Physics, Politecnico di Milano, Via Anzani 42, 22100, Como, Italy
| | - Jong M Kim
- Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK
| | - Chaoxia Wang
- Key Laboratory of Eco-Textile, Ministry of Education, School of Textiles and Clothing, Jiangnan University, 214122, Wuxi, China
| | - Caterina Ducati
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage road, Cambridge, CB3 0FS, UK
| | - Roman Sordan
- L-NESS, Department of Physics, Politecnico di Milano, Via Anzani 42, 22100, Como, Italy
| | - Felice Torrisi
- Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK.
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39
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Chen A, Liu R, Peng X, Chen Q, Wu J. 2D Hybrid Nanomaterials for Selective Detection of NO 2 and SO 2 Using "Light On and Off" Strategy. ACS APPLIED MATERIALS & INTERFACES 2017; 9:37191-37200. [PMID: 28910069 DOI: 10.1021/acsami.7b11244] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
In order to distinguish NO2 and SO2 gas with one sensor, we designed a paper chip assembled with a 2D g-C3N4/rGO stacking hybrid fabricated via a layer-by-layer self-assembly approach. The g-C3N4/rGO hybrid exhibited a remarkable photoelectric property due to the construction of a van der Waals heterostructure. For the first time, we have been able to selectively detect NO2 and SO2 gas using a "light on and off" strategy. Under the "light off" condition, the g-C3N4/rGO sensor exhibited a p-type semiconducting behavior with a low detection limit of 100 ppb of NO2, but with no response toward SO2. In contrast, the sensor showed n-type semiconducting behavior which could detect SO2 at concentration as low as 2 ppm under UV light irradiation. The effective electron transfer among the 2D structure of g-C3N4 and rGO nanosheets as well as highly porous structures could play an important role in gas sensing. The different sensing mechanisms at "light on and off" circumstances were also investigated in detail.
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Affiliation(s)
- Aimin Chen
- College of Chemical Engineering, Zhejiang University of Technology , Hangzhou 310014, China
| | - Rui Liu
- College of Chemical Engineering, Zhejiang University of Technology , Hangzhou 310014, China
| | - Xiao Peng
- College of Chemical Engineering, Zhejiang University of Technology , Hangzhou 310014, China
| | - Qiaofen Chen
- Institute of Microanalytical System, Department of Chemistry, Zhejiang University , Hangzhou 310058, China
| | - Jianmin Wu
- Institute of Microanalytical System, Department of Chemistry, Zhejiang University , Hangzhou 310058, China
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40
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Rao CNR, Gopalakrishnan K. Borocarbonitrides, B xC yN z: Synthesis, Characterization, and Properties with Potential Applications. ACS APPLIED MATERIALS & INTERFACES 2017; 9:19478-19494. [PMID: 27797466 DOI: 10.1021/acsami.6b08401] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Borocarbonitrides, BxCyNz, constitute a new family of layered two-dimensional materials and can be considered to be derived from graphene. They can be simple composites containing graphene and BN domains or more complex materials possessing B-C and C-N bonds besides B-N and C-C bonds. Properties of these materials depend on the composition, and the method of synthesis, wherein one can traverse from the insulating end (BN) to the conducting end (graphene). In this article, we present an up-to-date review of the various aspects of borocarbonitrides including synthesis, characterization and properties. Some of the properties have potential applications, typical of them being in gas adsorption and energy devices such as supercapacitors, fuel cells and batteries. Performance of borocarbonitrides as catalysts in the electrochemical hydrogen evolution reaction is impressive. It is noteworthy that with certain compositions on borocarbonitrides, field-effect transistors can be fabricated.
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Affiliation(s)
- C N R Rao
- Chemistry and Physics of Materials Unit, New Chemistry Unit, International Centre for Materials Science, CSIR Centre of Excellence in Chemistry and Sheik Saqr Laboratory, Jawaharlal Nehru Centre for Advanced Scientific Research , Jakkur, Bangalore 560064, India
| | - K Gopalakrishnan
- Chemistry and Physics of Materials Unit, New Chemistry Unit, International Centre for Materials Science, CSIR Centre of Excellence in Chemistry and Sheik Saqr Laboratory, Jawaharlal Nehru Centre for Advanced Scientific Research , Jakkur, Bangalore 560064, India
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41
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Gupta BK, Singh S, Kedawat G, Kumar P, Gangwar AK, Narayanan TN, Marti AA, Vajtai R, Ajayan PM. A novel electroluminescent device based on a reduced graphene oxide wrapped phosphor (ZnS:Cu,Al) and hexagonal-boron nitride for high-performance luminescence. NANOSCALE 2017; 9:5002-5008. [PMID: 28383578 DOI: 10.1039/c6nr09302g] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Reduced graphene oxide (rGO) has recently emerged as a very promising family of exotic carbon material with augmented performance in electronic and optoelectronic devices. Herein, we report an efficient and novel inorganic electroluminescent device geometry, where a new phosphor composite, reduced graphene oxide wrapped ZnS:Cu,Al, acts as an active emitting layer and an exfoliated hexagonal boron nitride (h-BN) as a dielectric layer. The roles of rGO in the active layer as a conductive support and local electric field enhancing agent are attributed to its wrinkles being unraveled compared with other carbon exotic nano-forms such as carbon nanotubes, graphite, charcoal and activated carbon, which significantly improves the brightness of the device (∼50 cd m-2 for 0.50 wt% rGO/ZnS:Cu,Al at 10 kHz and 110 V with an external quantum efficiency of ∼6.3% ± 0.1% and current efficiency of ∼0.81 ± 0.09 cd A-1). This new and facile strategy to construct the luminescent devices could be a paradigm shift towards cost effective, highly stable in air (for several days) and energy efficient next generation display devices.
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Affiliation(s)
- Bipin Kumar Gupta
- Luminescent Materials and Devices Group, Materials Physics and Engineering Division, CSIR-National Physical Laboratory, Dr K S Krishnan Road, New Delhi, 110012, India.
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42
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Aggoune W, Cocchi C, Nabok D, Rezouali K, Akli Belkhir M, Draxl C. Enhanced Light-Matter Interaction in Graphene/h-BN van der Waals Heterostructures. J Phys Chem Lett 2017; 8:1464-1471. [PMID: 28296404 DOI: 10.1021/acs.jpclett.7b00357] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
By investigating the optoelectronic properties of prototypical graphene/hexagonal boron nitride (h-BN) heterostructures, we demonstrate how a nanostructured combination of these materials can lead to a dramatic enhancement of light-matter interaction and give rise to unique excitations. In the framework of ab initio many-body perturbation theory, we show that such heterostructures absorb light over a broad frequency range, from the near-infrared to the ultraviolet (UV), and that each spectral region is characterized by a specific type of excitations. Delocalized electron-hole pairs in graphene dominate the low-energy part of the spectrum, while strongly bound electron-hole pairs in h-BN are preserved in the near-UV. Besides these features, characteristic of the pristine constituents, charge-transfer excitations appear across the visible region. Remarkably, the spatial distribution of the electron and the hole can be selectively tuned by modulating the stacking arrangement of the individual building blocks. Our results open up unprecedented perspectives in view of designing van der Waals heterostructures with tailored optoelectronic features.
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Affiliation(s)
- Wahib Aggoune
- Institut für Physik and IRIS Adlershof, Humboldt-Universität zu Berlin , 12489 Berlin, Germany
- Laboratoire de Physique Théorique, Faculté des Science Exactes, Université de Bejaia , 06000 Bejaia, Algeria
| | - Caterina Cocchi
- Institut für Physik and IRIS Adlershof, Humboldt-Universität zu Berlin , 12489 Berlin, Germany
| | - Dmitrii Nabok
- Institut für Physik and IRIS Adlershof, Humboldt-Universität zu Berlin , 12489 Berlin, Germany
| | - Karim Rezouali
- Laboratoire de Physique Théorique, Faculté des Science Exactes, Université de Bejaia , 06000 Bejaia, Algeria
| | - Mohamed Akli Belkhir
- Laboratoire de Physique Théorique, Faculté des Science Exactes, Université de Bejaia , 06000 Bejaia, Algeria
| | - Claudia Draxl
- Institut für Physik and IRIS Adlershof, Humboldt-Universität zu Berlin , 12489 Berlin, Germany
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43
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Kvashnin DG, Kvashnina OP, Avramov PV, Sorokin PB, Kvashnin AG. Novel hybrid C/BN two-dimensional heterostructures. NANOTECHNOLOGY 2017; 28:085205. [PMID: 28114121 DOI: 10.1088/1361-6528/aa55e9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Here we present an investigation of new quasi-two-dimensional heterostructures based on the alternation of bounded carbon and boron nitride layers (C/BN). We carried out a theoretical study of the atomic structure, stability and electronic properties of the proposed heterostructures. Such ultrathin quasi-two-dimensional C/BN films can be synthesized by means of chemically induced phase transition by connection of the layers of multilayered h-BN/graphene van der Waals heterostructures, which is indicated by the negative phase transition pressure in the calculated phase diagrams (P, T) of the films. It was shown that the band gap value of the C/BN films spans the infrared and visible spectrum. We hope that the proposed films and fabrication method can be considered as a possible route to obtain nanostructures with a controllable band gap in wide energy range. This makes these materials potentially suitable for a variety of applications, including photovoltaics, photoelectronics and more.
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Affiliation(s)
- Dmitry G Kvashnin
- Emanuel Institute of Biochemical Physics, Russian Academy of Science, 4 Kosigin Street, Moscow, 119334, Russian Federation. National University of Science and Technology MISiS, 4 Leninskiy Prospekt, Moscow, 119049, Russian Federation
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44
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Biroju RK, Pal S, Sharma R, Giri PK, Narayanan TN. Stacking sequence dependent photo-electrocatalytic performance of CVD grown MoS 2/graphene van der Waals solids. NANOTECHNOLOGY 2017; 28:085101. [PMID: 28114119 DOI: 10.1088/1361-6528/aa565a] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
New layered solids by the combinatorial stacking of different atomic layers are emanating as novel candidates for energy efficient devices. Here, sequentially stacked single layer graphene-molybdenum disulfide (MoS2) van der Waals (vdW) solids are demonstrated for their efficacy in the catalysis of hydrogen evolution reaction (HER), and importance of their stacking order in tuning the photo-electrocatalytic (PEC) efficiency is unraveled. Single layer graphene and a few layered MoS2 stacked vdW solids based transparent flexible electrodes were prepared, and a particular stacking sequence where top-graphene: bottom-MoS2/polydimethylsiloxane (PDMS) geometry (MSGR) exhibited the lowest onset and over potentials and a very high exchange current density (j 0 ∼ 245 ± 1 μA cm-2) in acidic HER in comparison to the individual layers and other stacked configuration (MoS2 on top of graphene on PDMS, GRMS). The HER studies under dark and white light illuminations were conducted to explore the PEC responses of the devices. The augmented HER performance of MSGR is further confirmed from the charge transfer resistance measurements using electrochemical impedance spectroscopy. Role of graphene plasmonics and MoS2 to graphene electron transfer were studied, and this study unravels the importance of a new factor, stacking order of vdW layers, while designing novel devices from the layered solids.
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Affiliation(s)
- Ravi K Biroju
- TIFR-Center for Interdisciplinary Sciences (TCIS), Tata Institute of Fundamental Research, 21 Brundavan Colony, Narsingi, Hyderabad-500075, India
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45
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Wang J, Ma F, Sun M. Graphene, hexagonal boron nitride, and their heterostructures: properties and applications. RSC Adv 2017. [DOI: 10.1039/c7ra00260b] [Citation(s) in RCA: 370] [Impact Index Per Article: 52.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022] Open
Abstract
In recent years, two-dimensional atomic-level thickness crystal materials have attracted widespread interest such as graphene, hexagonal boron nitride (h-BN), silicene, germanium, black phosphorus (BP), transition metal sulfides and so on.
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Affiliation(s)
- Jingang Wang
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science
- School of Mathematics and Physics
- University of Science and Technology Beijing
- Beijing
- People's Republic of China
| | - Fengcai Ma
- Department of Chemistry and Physics
- Liaoning University
- Shenyang
- People's Republic of China
| | - Mengtao Sun
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science
- School of Mathematics and Physics
- University of Science and Technology Beijing
- Beijing
- People's Republic of China
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46
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Zhang F, Li W, Ma Y, Tang Y, Dai X. Tuning the Schottky contacts at the graphene/WS2 interface by electric field. RSC Adv 2017. [DOI: 10.1039/c7ra00589j] [Citation(s) in RCA: 44] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Evolution of Schottky barriers of ΦBp and ΦBn in graphene/WS2 heterostructures as a function of external electric field.
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Affiliation(s)
- Fang Zhang
- College of Electric and Mechanical Engineering
- Pingdingshan University
- Pingdingshan 467000
- China
| | - Wei Li
- School of Mathematics & Physics
- Henan University of Urban Construction
- Pingdingshan 467036
- China
- College of Physics and Materials Science
| | - Yaqiang Ma
- College of Physics and Materials Science
- Henan Normal University
- Xinxiang 453007
- China
| | - Yanan Tang
- Department of Physics
- Zhengzhou Normal University
- Zhengzhou
- China
| | - Xianqi Dai
- College of Physics and Materials Science
- Henan Normal University
- Xinxiang 453007
- China
- Department of Physics
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47
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Rao CNR, Pramoda K, Kumar R. Covalent cross-linking as a strategy to generate novel materials based on layered (2D) and other low D structures. Chem Commun (Camb) 2017; 53:10093-10107. [DOI: 10.1039/c7cc05390h] [Citation(s) in RCA: 34] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Covalent linking of 2D structures such as graphene, MoS2and C3N4by employing coupling reactions provides a strategy to generate a variety of materials with new or improved properties.
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Affiliation(s)
- C. N. R. Rao
- New Chemistry Unit
- Chemistry and Physics of Materials Unit
- CSIR Center of Excellence in Chemistry
- Sheik Saqr Laboratory and International Centre for Materials Science
- Jawaharlal Nehru Centre for Advanced Scientific Research
| | - K. Pramoda
- New Chemistry Unit
- Chemistry and Physics of Materials Unit
- CSIR Center of Excellence in Chemistry
- Sheik Saqr Laboratory and International Centre for Materials Science
- Jawaharlal Nehru Centre for Advanced Scientific Research
| | - Ram Kumar
- New Chemistry Unit
- Chemistry and Physics of Materials Unit
- CSIR Center of Excellence in Chemistry
- Sheik Saqr Laboratory and International Centre for Materials Science
- Jawaharlal Nehru Centre for Advanced Scientific Research
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48
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Lin YC, Bilgin I, Ahmed T, Chen R, Pete D, Kar S, Zhu JX, Gupta G, Mohite A, Yoo J. Charge transfer in crystalline germanium/monolayer MoS 2 heterostructures prepared by chemical vapor deposition. NANOSCALE 2016; 8:18675-18681. [PMID: 27714095 DOI: 10.1039/c6nr03621j] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Heterostructuring provides novel opportunities for exploring emergent phenomena and applications by developing designed properties beyond those of homogeneous materials. Advances in nanoscience enable the preparation of heterostructures formed incommensurate materials. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, are of particular interest due to their distinct physical characteristics. Recently, 2D/2D heterostructures have opened up new research areas. However, other heterostructures such as 2D/three-dimensional (3D) materials have not been thoroughly studied yet although the growth of 3D materials on 2D materials creating 2D/3D heterostructures with exceptional carrier transport properties has been reported. Here we report a novel heterostructure composed of Ge and monolayer MoS2, prepared by chemical vapor deposition. A single crystalline Ge (110) thin film was grown on monolayer MoS2. The electrical characteristics of Ge and MoS2 in the Ge/MoS2 heterostructure were remarkably different from those of isolated Ge and MoS2. The field-effect conductivity type of the monolayer MoS2 is converted from n-type to p-type by growth of the Ge thin film on top of it. Undoped Ge on MoS2 is highly conducting. The observations can be explained by charge transfer in the heterostructure as opposed to chemical doping via the incorporation of impurities, based on our first-principles calculations.
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Affiliation(s)
- Yung-Chen Lin
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
| | - Ismail Bilgin
- Department of Physics, Northeastern University, Boston, MA 02115, USA and Materials Physics and Applications-11, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Towfiq Ahmed
- T-4, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Renjie Chen
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093, USA
| | - Doug Pete
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM 87110, USA
| | - Swastik Kar
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Jian-Xin Zhu
- T-4, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Gautam Gupta
- Materials Physics and Applications-11, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Aditya Mohite
- Materials Physics and Applications-11, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Jinkyoung Yoo
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
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49
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Büchner C, Wang ZJ, Burson KM, Willinger MG, Heyde M, Schlögl R, Freund HJ. A Large-Area Transferable Wide Band Gap 2D Silicon Dioxide Layer. ACS NANO 2016; 10:7982-7989. [PMID: 27421042 DOI: 10.1021/acsnano.6b03929] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
An atomically smooth silica bilayer is transferred from the growth substrate to a new support via mechanical exfoliation at millimeter scale. The atomic structure and morphology are maintained perfectly throughout the process. A simple heating treatment results in complete removal of the transfer medium. Low-energy electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy, and environmental scanning electron microscopy show the success of the transfer steps. Excellent chemical and thermal stability result from the absence of dangling bonds in the film structure. By adding this wide band gap oxide to the toolbox of 2D materials, possibilities for van der Waals heterostructures will be broadened significantly.
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Affiliation(s)
- Christin Büchner
- Fritz-Haber-Institut der Max-Planck-Gesellschaft Faradayweg 4-6, 14195 Berlin, Germany
| | - Zhu-Jun Wang
- Fritz-Haber-Institut der Max-Planck-Gesellschaft Faradayweg 4-6, 14195 Berlin, Germany
| | - Kristen M Burson
- Fritz-Haber-Institut der Max-Planck-Gesellschaft Faradayweg 4-6, 14195 Berlin, Germany
| | - Marc-Georg Willinger
- Fritz-Haber-Institut der Max-Planck-Gesellschaft Faradayweg 4-6, 14195 Berlin, Germany
| | - Markus Heyde
- Fritz-Haber-Institut der Max-Planck-Gesellschaft Faradayweg 4-6, 14195 Berlin, Germany
| | - Robert Schlögl
- Fritz-Haber-Institut der Max-Planck-Gesellschaft Faradayweg 4-6, 14195 Berlin, Germany
| | - Hans-Joachim Freund
- Fritz-Haber-Institut der Max-Planck-Gesellschaft Faradayweg 4-6, 14195 Berlin, Germany
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50
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Vasu KS, Prestat E, Abraham J, Dix J, Kashtiban RJ, Beheshtian J, Sloan J, Carbone P, Neek-Amal M, Haigh SJ, Geim AK, Nair RR. Van der Waals pressure and its effect on trapped interlayer molecules. Nat Commun 2016; 7:12168. [PMID: 27385262 PMCID: PMC4941049 DOI: 10.1038/ncomms12168] [Citation(s) in RCA: 89] [Impact Index Per Article: 11.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/27/2016] [Accepted: 06/08/2016] [Indexed: 12/30/2022] Open
Abstract
Van der Waals assembly of two-dimensional crystals continue attract intense interest due to the prospect of designing novel materials with on-demand properties. One of the unique features of this technology is the possibility of trapping molecules between two-dimensional crystals. The trapped molecules are predicted to experience pressures as high as 1 GPa. Here we report measurements of this interfacial pressure by capturing pressure-sensitive molecules and studying their structural and conformational changes. Pressures of 1.2±0.3 GPa are found using Raman spectrometry for molecular layers of 1-nm in thickness. We further show that this pressure can induce chemical reactions, and several trapped salts are found to react with water at room temperature, leading to two-dimensional crystals of the corresponding oxides. This pressure and its effect should be taken into account in studies of van der Waals heterostructures and can also be exploited to modify materials confined at the atomic interfaces.
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Affiliation(s)
- K. S. Vasu
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK
| | - E. Prestat
- School of Materials, University of Manchester, Manchester M13 9PL, UK
| | - J. Abraham
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK
| | - J. Dix
- School of Chemical Engineering and Analytical Science, University of Manchester, Manchester M13 9PL, UK
| | - R. J. Kashtiban
- Department of Physics, University of Warwick, Coventry CV4 7AL, UK
| | - J. Beheshtian
- Department of Physics, Shahid Rajaee Teacher Training University, 16875-163, Lavizan, Tehran, Iran
| | - J. Sloan
- Department of Physics, University of Warwick, Coventry CV4 7AL, UK
| | - P. Carbone
- School of Chemical Engineering and Analytical Science, University of Manchester, Manchester M13 9PL, UK
| | - M. Neek-Amal
- Department of Physics, Shahid Rajaee Teacher Training University, 16875-163, Lavizan, Tehran, Iran
| | - S. J. Haigh
- School of Materials, University of Manchester, Manchester M13 9PL, UK
| | - A. K. Geim
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK
| | - R. R. Nair
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK
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