Artificially stacked atomic layers: toward new van der Waals solids

The Rise of Xene Hybrids

Xenes, mono-elemental atomic sheets, exhibit Dirac/Dirac-like quantum behavior. When interfaced with other 2D materials such as boron nitride, transition metal dichalcogenides, and metal carbides/nitrides/carbonitrides, it enables them with unique physicochemical properties, including structural stability, desirable bandgap, efficient charge carrier injection, flexibility/breaking stress, thermal conductivity, chemical reactivity, catalytic efficiency, molecular adsorption, and wettability. For example, BN acts as an anti-oxidative shield, MoS2 injects electrons upon laser excitation, and MXene provides mechanical flexibility. Beyond precise compositional modulations, stacking sequences, and inter-layer coupling controlled by parameters, achieving scalability and reproducibility in hybridization is crucial for implementing these quantum materials in consumer applications. However, realizing the full potential of these hybrid materials faces challenges such as air gaps, uneven interfaces, and the formation of defects and functional groups. Advanced synthesis techniques, a deep understanding of quantum behaviors, precise control over interfacial interactions, and awareness of cross-correlations among these factors are essential. Xene-based hybrids show immense promise for groundbreaking applications in quantum computing, flexible electronics, energy storage, and catalysis. In this timely perspective, recent discoveries of novel Xenes and their hybrids are highlighted, emphasizing correlations among synthetic parameters, structure, properties, and applications. It is anticipated that these insights will revolutionize diverse industries and technologies.

Exploring Antiviral Drugs on Monolayer Black Phosphorene: Atomistic Theory and Explainable Machine Learning-Assisted Platform

Favipiravir (FP) and ebselen (EB) belong to a diverse class of antiviral drugs known for their significant efficacy in treating various viral infections. Utilizing molecular dynamics (MD) simulations, machine learning, and van der Waals density functional theory, we accurately elucidate the binding properties of these antiviral drugs on a phosphorene single-layer. To further investigate these characteristics, this study employs four distinct machine learning models-Random Forest, Gradient Boosting, XGBoost, and CatBoost. The Hamiltonian of antiviral molecules within a monolayer of phosphorene is appropriately trained. The key aspect of utilizing machine learning (ML) in drug design revolves around training models that are efficient and precise in approximating density functional theory (DFT). Furthermore, the study employs SHAP (SHapley Additive exPlanations) to elucidate model predictions, providing insights into the contribution of each feature. To explore the interaction characteristics and thermodynamic properties of the hybrid drug, we employ molecular dynamics and DFT calculations in a vacuum interface. Our findings suggest that this functionalized 2D complex exhibits robust thermostability, indicating its potential as an effective and enabled entity. The observed variations in free energy at different surface charges and temperatures suggest the adsorption potential of FP and EB molecules from the surrounding environment.

Thermal Rectification across an Asymmetric Layer Carbon Nanotube van der Waals Heterostructure

The exceptional thermal conductivity and strength of carbon nanotubes (CNTs) position them as outstanding materials for thermal conduction. The intriguing properties introduced by van der Waals (vdW) heterojunctions have also captured the interest of researchers. However, further refinement of the research concerning the integration of these two elements is required. In our study, a vdW heterostructure with asymmetric layer nesting of multiwalled CNTs (ALCNTs) is devised, with a specific focus on the model's heat flux and thermal rectification (TR) properties, which are analyzed using nonequilibrium molecular dynamics (NEMD). Notably, the greatest TR ratio is observed in the connection of three-layer and single-layer ALCNTs. Moreover, multilayer variable-length nested models exhibit a sluggish TR ratio. An examination of the interface thermal resistance (ITR) reveals that the maximum ITR in the multilayer nested model resides at the rightmost interface. However, it is essential to highlight that the determinant of the TR ratio and heat flux in the multilayer nested model is not the maximum ITR of the rightmost interface but rather the ITR of the outermost layer on the left. Additionally, the impacts of the defect density, length, temperature difference, and hydrogenation on the model's heat flux and TR are explored, yielding noteworthy conclusions. For instance, defects in the outer CNT have a minimal influence on the heat flux and TR compared with those in the inner CNT. As the length increases, the heat flux initially decreases and then increases. Hydrogenation significantly enhances the model's heat flux but does not favor the TR. Our study contributes to advancing the understanding of CNT vdW heterojunctions and offers valuable insights for their practical applications.

Recent Strategies for the Synthesis of Phase-Pure Ultrathin 1T/1T' Transition Metal Dichalcogenide Nanosheets

The past few decades have witnessed a notable increase in transition metal dichalcogenide (TMD) related research not only because of the large family of TMD candidates but also because of the various polytypes that arise from the monolayer configuration and layer stacking order. The peculiar physicochemical properties of TMD nanosheets enable an enormous range of applications from fundamental science to industrial technologies based on the preparation of high-quality TMDs. For polymorphic TMDs, the 1T/1T' phase is particularly intriguing because of the enriched density of states, and thus facilitates fruitful chemistry. Herein, we comprehensively discuss the most recent strategies for direct synthesis of phase-pure 1T/1T' TMD nanosheets such as mechanical exfoliation, chemical vapor deposition, wet chemical synthesis, atomic layer deposition, and more. We also review frequently adopted methods for phase engineering in TMD nanosheets ranging from chemical doping and alloying, to charge injection, and irradiation with optical or charged particle beams. Prior to the synthesis methods, we discuss the configuration of TMDs as well as the characterization tools mostly used in experiments. Finally, we discuss the current challenges and opportunities as well as emphasize the promising fields for the future development.

Borocarbonitride-Based Emerging Materials for Supercapacitor Applications: Recent Advances, Challenges, and Future Perspectives

Supercapacitors have emerged as a promising energy storage technology due to their high-power density, fast charging/discharging capabilities, and long cycle life. Moreover, innovative electrode materials are extensively explored to enhance the performance, mainly the energy density of supercapacitors. Among the two-dimensional (2D) supercapacitor electrodes, borocarbonitride (BCN) has sparked widespread curiosity owing to its exceptional tunable properties concerning the change in concentration of the constituent elements, along with an excellent alternative to graphene-based electrodes. BCN, an advanced nanomaterial, possesses excellent electrical conductivity, chemical stability, and a large specific surface area. These factors contribute to supercapacitors' overall performance and reliability, making them a viable option to address the energy crisis. This review provides a detailed survey of BCN, its structural, electronic, chemical, magnetic, and mechanical properties, advanced synthesis methods, factors affecting the charge storage mechanism, and recent advances in BCN-based supercapacitor electrodes. The review embarks on the scrupulous elaboration of ways to enhance the electrochemical properties of BCN through various innovative strategies followed by critical challenges and future perspectives. BCN, as an eminent electrode material, holds great potential to revolutionize the energy landscape and support the growing energy demands of the future.

Correlations in randomly stacked solids

Packing of spheres is a problem with a long history dating back to Kepler's conjecture in 1611. The highest density is realized in face-centered-cubic (FCC) and hexagonal-close-packed (HCP) arrangements. These are only limiting examples of an infinite family of maximal-density structures called Barlow stackings. They are constructed by stacking triangular layers, with each layer shifted with respect to the one below. At the other extreme, Torquato-Stillinger stackings are believed to yield the lowest possible density while preserving mechanical stability. They form an infinite family of structures composed of stacked honeycomb layers. In this article, we characterize layer-correlations in both families when the stacking is random. To do so, we take advantage of the Hägg code-a mapping between a Barlow stacking and a one-dimensional Ising magnet. The layer correlation is related to a moment-generating function of the Ising model. We first determine the layer correlation for random Barlow stacking, finding exponential decay. We next introduce a bias favoring one of two stacking chiralities-equivalent to a magnetic field in the Ising model. Although this bias favors FCC ordering, there is no long-ranged order as correlations still decay exponentially. Finally, we consider Torquato-Stillinger stackings, which map to a combination of an Ising magnet and a three-state Potts model. With random stacking, the correlations decay exponentially with a form that is similar to the Barlow problem. We discuss relevance to ordering in clusters of stacked solids and for layer-deposition-based synthesis methods.

Synergy of Small Antiviral Molecules on a Black-Phosphorus Nanocarrier: Machine Learning and Quantum Chemical Simulation Insights

Favipiravir (FP) and Ebselen (EB) belong to a broad range of antiviral drugs that have shown active potential as medications against many viruses. Employing molecular dynamics simulations and machine learning (ML) combined with van der Waals density functional theory, we have uncovered the binding characteristics of these two antiviral drugs on a phosphorene nanocarrier. Herein, by using four different machine learning models (i.e., Bagged Trees, Gaussian Process Regression (GPR), Support Vector Regression (SVR), and Regression Trees (RT)), the Hamiltonian and the interaction energy of antiviral molecules in a phosphorene monolayer are trained in an appropriate way. However, training efficient and accurate models for approximating the density functional theory (DFT) is the final step in using ML to aid in the design of new drugs. To improve the prediction accuracy, the Bayesian optimization approach has been employed to optimize the GPR, SVR, RT, and BT models. Results revealed that the GPR model obtained superior prediction performance with an R2 of 0.9649, indicating that it can explain 96.49% of the data's variability. Then, by means of DFT calculations, we examine the interaction characteristics and thermodynamic properties in a vacuum and a continuum solvent interface. These results illustrate that the hybrid drug is an enabled, functionalized 2D complex with vigorous thermostability. The change in Gibbs free energy at different surface charges and temperatures implies that the FP and EB molecules are allowed to adsorb from the gas phase onto the 2D monolayer at different pH conditions and high temperatures. The results reveal a valuable antiviral drug therapy loaded by 2D biomaterials that may possibly open a new way of auto-treating different diseases, such as SARS-CoV, in primary terms.

Tailoring the Angular Mismatch in MoS2 Homobilayers through Deformation Fields

Ultrathin MoS₂ has shown remarkable characteristics at the atomic scale with an immutable disorder to weak external stimuli. Ion beam modification unlocks the potential to selectively tune the size, concentration, and morphology of defects produced at the site of impact in 2D materials. Combining experiments, first-principles calculations, atomistic simulations, and transfer learning, it is shown that irradiation-induced defects can induce a rotation-dependent moiré pattern in vertically stacked homobilayers of MoS₂ by deforming the atomically thin material and exciting surface acoustic waves (SAWs). Additionally, the direct correlation between stress and lattice disorder by probing the intrinsic defects and atomic environments are demonstrated. The method introduced in this paper sheds light on how engineering defects in the lattice can be used to tailor the angular mismatch in van der Waals (vdW) solids.

Computational Studies of Auto-Active van der Waals Interaction Molecules on Ultra-Thin Black-Phosphorus Film

Using the van der Waals density functional theory, we studied the binding peculiarities of favipiravir (FP) and ebselen (EB) molecules on a monolayer of black phosphorene (BP). We systematically examined the interaction characteristics and thermodynamic properties in a vacuum and a continuum, solvent interface for active drug therapy. These results illustrate that the hybrid molecules are enabled functionalized two-dimensional (2D) complex systems with a vigorous thermostability. We demonstrate in this study that these molecules remain flat on the monolayer BP system and phosphorus atoms are intact. It is inferred that the hybrid FP+EB molecules show larger adsorption energy due to the van der Waals forces and planar electrostatic interactions. The changes in Gibbs free energy at different surface charge fluctuations and temperatures imply that the FP and EB are allowed to adsorb from the gas phase onto the 2D film at high temperatures. Thereby, the results unveiled beneficial inhibitor molecules on two dimensional BP nanocarriers, potentially introducing a modern strategy to enhance the development of advanced materials, biotechnology, and nanomedicine.

Interlayer and Intralayer Excitons in AlN/WS2 Heterostructure

The study of intra and interlayer excitons in 2D semiconducting vdW heterostructures is a very hot topic not only from a fundamental but also an applicative point of view. Due to their strong light-matter interaction, Transition Metal Dichalcogenides (TMD) and group-III nitrides are particularly attractive in the field of opto-electronic applications such as photo-catalytic and photo-voltaic ultra-thin and flexible devices. Using first-principles ground and excited-state simulations, we investigate here the electronic and excitonic properties of a representative nitride/TMD heterobilayer, the AlN/WS2. We demonstrate that the band alignment is of type I, and low energy intralayer excitons are similar to those of a pristine WS2 monolayer. Further, we disentangle the role of strain and AlN dielectric screening on the electronic and optical gaps. These results, although they do not favor the possible use of AlN/WS2 in photo-catalysis, as envisaged in the previous literature, can boost the recently started experimental studies of 2D hexagonal aluminum nitride as a good low screening substrate for TMD-based electronic and opto-electronic devices. Importantly, our work shows how the inclusion of both spin-orbit and many-body interactions is compulsory for the correct prediction of the electronic and optical properties of TMD/nitride heterobilayers.

2+δ-Dimensional Materials via Atomistic Z-Welding

Pivotal to functional van der Waals stacked flexible electronic/excitonic/spintronic/thermoelectric chips is the synergy amongst constituent layers. However; the current techniques viz. sequential chemical vapor deposition, micromechanical/wet-chemical transfer are mostly limited due to diffused interfaces, and metallic remnants/bubbles at the interface. Inter-layer-coupled 2+δ-dimensional materials, as a new class of materials can be significantly suitable for out-of-plane carrier transport and hence prompt response in prospective devices. Here, the discovery of the use of exotic electric field ≈10⁶  V cm^{- 1} (at microwave hot-spot) and 2 thermomechanical conditions i.e. pressure ≈1 MPa, T ≈ 200 °C (during solvothermal reaction) to realize 2+δ-dimensional materials is reported. It is found that P_z P_z chemical bonds form between the component layers, e.g., CB and CN in G-BN, MoN and MoB in MoS₂ -BN hybrid systems as revealed by X-ray photoelectron spectroscopy. New vibrational peaks in Raman spectra (BC ≈1320 cm^-1 for the G-BN system and MoB ≈365 cm^-1 for the MoS₂ -BN system) are recorded. Tunable mid-gap formation, along with diodic behavior (knee voltage ≈0.7 V, breakdown voltage ≈1.8 V) in the reduced graphene oxide-reduced BN oxide (RGO-RBNO) hybrid system is also observed. Band-gap tuning in MoS₂ -BN system is observed. Simulations reveal stacking-dependent interfacial charge/potential drops, hinting at the feasibility of next-generation functional devices/sensors.

Atomistic Mismatch Defines Energy-Structure Relationships during Oriented Attachment of Nanoparticles

Oriented attachment is an important crystal growth pathway in nature and has been extensively exploited to develop hierarchically structured crystalline materials. Atomistic mismatch in the crystal structure of two particles in the solvent-separated state creates forces that drive particle motions enabling solvent expulsion and coalescence, but the relative magnitudes of the energy barriers for approach, rotation, and translation are not well-known. Here we use classical molecular simulations to calculate the potential of mean force for these three different motions for basal surface encounters of gibbsite nanoplatelets separated by one water layer. In all cases, the highest energy barrier is associated with removing this last water layer to enable jump to contact, even when coaligned. Mutual rotation is more probable than sliding motion, which are both much more probable than jump to contact. This work provides the first comparison on an equal footing of the energy-structure relationships for multiple alignment paths between solvent-separated particles in bulk aqueous solution.

Anti-Symmetric Electromagnetic Interactions' Response in Electron Circular Dichroism and Chiral Origin of Periodic, Complementary Twisted Angle in Twisted Bilayer Graphene

Many novel physical properties of twisted bilayer graphene have been discovered and studied successively, but the physical mechanism of the chiral modulation of BLG by a twisted angle lacks theoretical research. In this work, the density functional theory, the wavefunction analysis of the excited state, and the quantum theory of atoms in molecules are used to calculate and analyze the anti-symmetric chiral characteristics of zigzag-edge twisted bilayer graphene quantum dots based on periodic complementary twisted angles. The analysis of the partial density of states shows that Moiré superlattices can effectively adjust the contribution of the atomic basis function of the fragment to the transition dipole moment. The topological analysis of electron density indicates that the Moiré superlattices structure can enhance the localization of the system, increasing the electron density of the Moiré central ring, reducing the electron surge capacity in general and inducing the reversed helical properties of the top and underlying graphene, which can be used as the origin of the chiral discrimination; it also reveals the mole in the superlattice chiral physical mechanism. On this basis, we will also study the nonlinear optical properties of twisted bilayer graphene based on a twisted angle.

Ab Initio Study of Graphene/hBN Van der Waals Heterostructures: Effect of Electric Field, Twist Angles and p-n Doping on the Electronic Properties

In this work, we study the structural and electronic properties of boron nitride bilayers sandwiched between graphene sheets. Different stacking, twist angles, doping, as well as an applied external gate voltage, are reported to induce important changes in the electronic band structure near the Fermi level. Small electronic lateral gaps of the order of few meV can appear near the Dirac points K. We further discuss how the bandstructures change applying a perpendicular external electric field, showing how its application lifts the degeneracy of the Dirac cones and, in the twisted case, moves their crossing points away from the Fermi energy. Then, we consider the possibility of co-doping, in an asymmetric way, the two external graphene layers. This is a situation that could be realized in heterostructures deposited on a substrate. We show that the co-doping acts as an effective external electric field, breaking the Dirac cones degeneracy. Finally, our work demonstrates how, by playing with field strength and p-n co-doping, it is possible to tune the small lateral gaps, pointing towards a possible application of C/BN sandwich structures as nano-optical terahertz devices.

V. P. L, N. M, Nayak PK. Twist-Dependent Tuning of Excitonic Emissions in Bilayer WSe2

Monolayer (ML) transition metal dichalcogenides (TMDCs) have been rigorously studied to comprehend their rich spin and valley physics, exceptional optical properties, and ability to open new avenues in fundamental research and technology. However, intricate analysis of twisted homobilayer (t-BL) systems is highly required due to the intriguing twist angle (t-angle)-dependent interlayer effects on optical and electrical properties. Here, we report the evolution of the interlayer effect on artificially stacked BL WSe₂, grown using chemical vapor deposition (CVD), with t-angle in the range of 0 ≤ θ ≤ 60°. Systematic analyses based on Raman and photoluminescence (PL) spectroscopies suggest intriguing deviations in the interlayer interactions, higher-energy exciton transitions (in the range of ∼1.6-1.7 eV), and stacking. In contrast to previous observations, we demonstrate a red shift in the PL spectra with t-angle. Density functional theory (DFT) is employed to understand the band-gap variations with t-angle. Exciton radiative lifetime has been estimated theoretically using temperature-dependent PL measurements, which shows an increase with t-angle that agrees with our experimental observations. This study presents the groundwork for further investigation of the evolution of various interlayer excitons and their dynamics with t-angle in homobilayer systems, critical for optoelectronic applications.

Strain-controlled thermoelectric properties of phosphorene-carbon monosulfide hetero-bilayers

The application of strain to 2D materials allows manipulating the electronic, magnetic, and thermoelectric properties. These physical properties are sensitive to slight variations induced by tensile and compressive strain and the uniaxial strain direction. Herein, we take advantage of the reversible semiconductor-metal transition observed in certain monolayers to propose a hetero-bilayer device. We propose to pill up phosphorene (layered black phosphorus) and carbon monosulfide monolayers. In the first, such transition appears for positive strain, while the second appears for negative strain. Our first-principle calculations show that depending on the direction of the applied uniaxial strain; it is possible to achieve reversible control in the layer that behaves as an electronic conductor while the other layer remains as a thermal conductor. The described strain-controlled selectivity could be used in the design of novel devices.

Graphene-Based Hybrid Functional Materials

Graphene is a 2D material combining numerous outstanding physical properties, including high flexibility and strength, extremely high thermal conductivity and electron mobility, transparency, etc., which make it a unique testbed to explore fundamental physical phenomena. Such physical properties can be further tuned by combining graphene with other nanomaterials or (macro)molecules to form hybrid functional materials, which by design can display not only the properties of the individual components but also exhibit new properties and enhanced characteristics arising from the synergic interaction of the components. The implementation of the hybrid approach to graphene also allows boosting the performances in a multitude of technological applications. This review reports the hybrids formed by graphene combined with other low-dimensional nanomaterials of diverse dimensionality (0D, 1D, and 2D) and (macro)molecules, with emphasis on the synthetic methods. The most important applications of these hybrids in the fields of sensing, water purification, energy storage, biomedical, (photo)catalysis, and opto(electronics) are also reviewed, with a special focus on the superior performances of these hybrids compared to the individual, nonhybridized components.

Van der Waals Epitaxy of III-Nitrides and Its Applications

III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdWE) has been proven to be a useful route to relax the requirements of lattice mismatch and thermal mismatch between the nitride epilayers and the substrates. By using vdWE, the stress in the epilayer can be sufficiently relaxed, and the epilayer can be easily exfoliated and transferred, which provides opportunities for novel device design and fabrication. In this paper, we review and discuss the important progress on the researches of nitrides vdWE. The potential applications of nitride vdWE are also prospected.

Degradation-by-design: how chemical functionalization enhances the biodegradability and safety of 2D materials

A large number of graphene and other 2D materials are currently used for the development of new technologies, increasingly entering different industrial sectors. Interrogating the impact of such 2D materials on health and environment is crucial for both modulating their potential toxicity in living organisms and eliminating them from the environment. In this context, understanding if 2D materials are bio-persistent is mandatory. In this review we describe the importance of biodegradability and decomposition of 2D materials. We initially cover the biodegradation of graphene family materials, followed by other emerging classes of 2D materials including transition metal dichalcogenides and oxides, Xenes, Mxenes and other non-metallic 2D materials. We explain the role of defects and functional groups, introduced onto the surface of the materials during their preparation, and the consequences of chemical functionalization on biodegradability. In strong relation to the chemistry on 2D materials, we describe the concept of "degradation-by-design" that we contributed to develop, and which concerns the covalent modification with appropriate molecules to enhance the biodegradability of 2D materials. Finally, we cover the importance of designing new biodegradable 2D conjugates and devices for biomedical applications as drug delivery carriers, in bioelectronics, and tissue engineering. We would like to highlight that the biodegradation of 2D materials mainly depends on the type of material, the chemical functionalization, the aqueous dispersibility and the redox potentials of the different oxidative environments. Biodegradation is one of the necessary conditions for the safe application of 2D materials. Therefore, we hope that this review will help to better understand their biodegradation processes, and will stimulate the chemists to explore new chemical strategies to design safer products, composites and devices containing 2D materials.

Two-Dimensional Van der Waals Heterostructures for Synergistically Improved Surface-Enhanced Raman Spectroscopy

Surface-enhanced Raman spectroscopy (SERS) is a precise and noninvasive analytical technique that is widely used in chemical analysis, environmental protection, food processing, pharmaceutics, and diagnostic biology. However, it is still a challenge to produce highly sensitive and reusable SERS substrates with a minimum fluorescence background. In this work, we propose the use of van der Waals heterostructures of two-dimensional materials to cover plasmonic metal nanoparticles to solve this challenge. The heterostructures of atomically thin boron nitride (BN) and graphene provide synergistic effects: (1) electrons could tunnel through the atomically thin BN, allowing the charge transfer between graphene and probe molecules to suppress the fluorescence background; (2) the SERS sensitivity is enhanced by graphene via a chemical enhancement mechanism in addition to an electromagnetic field mechanism; and (3) the atomically thin BN protects the underlying graphene and Ag nanoparticles from oxidation during heating for regeneration at 360 °C in the air so that the SERS substrates could be reused. These advances will facilitate wider applications of SERS especially on the detection of fluorescent molecules with higher sensitivity.

Achieving Significant Thermal Conductivity Enhancement via an Ice-Templated and Sintered BN-SiC Skeleton

Conventional polymer composites normally suffer from undesired thermal conductivity enhancement which has hampered the development of modern electronics as they face a stricter heat dissipating requirement. It is still challenging to achieve satisfactory thermal conductivity enhancement with reasonable mechanical properties. Herein, we present a three-dimensional (3D), lightweight, and mechanically strong boron nitride (BN)-silicon carbide (SiC) skeleton with aligned thermal pathways via the combination of ice-templated assembly and high-temperature sintering. The sintering has introduced atomic-level coupling at the BN-SiC junction which contributes to efficient phonon transport via the newly formed borosilicate glass BC_xN_3-x (0 ≤ x ≤ 3) and SiC_xN_4-x (0 ≤ x ≤ 4) phases, leading to much lower interfacial thermal resistance. Thus, the obtained BN-SiC skeleton shows satisfactory thermal performance. The prepared 3D BN-SiC/polydimethylsiloxane (PDMS) composites exhibit a maximum through-plane thermal conductivity of 3.87 W·m^-1·K^-1 at a filler loading of only 8.35 vol %. The thermal conductivity enhancement efficiency reaches 220% per 1 vol % filler when compared to pure PDMS matrix, superior to other reported BN skeleton-based composites. The feature of our strategy is to allow the oriented three-dimensional skeleton to be strongly bonded by a sintered ceramic phase instead of polymer-like adhesive, namely, to improve the intrinsic thermal conductivity of the skeleton to the greatest extent. This strategy can be applied to develop novel thermal management materials that are lightweight and mechanically tough that rapidly transfer heat. It represents a new avenue to addressing the heat challenges in traditional electronic products.

Many-body perturbation theory calculations using the yambo code

yambo is an open source project aimed at studying excited state properties of condensed matter systems from first principles using many-body methods. As input, yambo requires ground state electronic structure data as computed by density functional theory codes such as Quantum ESPRESSO and Abinit. yambo's capabilities include the calculation of linear response quantities (both independent-particle and including electron-hole interactions), quasi-particle corrections based on the GW formalism, optical absorption, and other spectroscopic quantities. Here we describe recent developments ranging from the inclusion of important but oft-neglected physical effects such as electron-phonon interactions to the implementation of a real-time propagation scheme for simulating linear and non-linear optical properties. Improvements to numerical algorithms and the user interface are outlined. Particular emphasis is given to the new and efficient parallel structure that makes it possible to exploit modern high performance computing architectures. Finally, we demonstrate the possibility to automate workflows by interfacing with the yambopy and AiiDA software tools.

Highly Compressive Boron Nitride Nanotube Aerogels Reinforced with Reduced Graphene Oxide

Boron nitride nanotubes (BNNTs), structural analogues of carbon nanotubes, have attracted significant attention due to their superb thermal conductivity, wide bandgap, excellent hydrogen storage capacity, and thermal and chemical stability. Despite considerable progress in the preparation and surface functionalization of BNNTs, it remains a challenge to assemble one-dimensional BNNTs into three-dimensional (3D) architectures (such as aerogels) for practical applications. Here, we report a highly compressive BNNT aerogel reinforced with reduced graphene oxide (rGO) fabricated using a freeze-drying method. The reinforcement effect of rGO and 3D honeycomb-like framework offer the BNNTs/rGO aerogel with a high compression resilience. The BNNTs/rGO aerogels were then infiltrated with polyethylene glycol to prepare a kind of phase change materials. The prepared phase change material composites show zero leakage even at 100 °C and enhanced thermal conductivity, due to the 3D porous structure of the BNNTs/rGO aerogel. This work provides a simple method for the preparation of 3D BNNTs/rGO aerogels for many potential applications, such as high-performance polymer composites.

Cavity Control of Excitons in Two-Dimensional Materials

We propose a robust and efficient way of controlling the optical spectra of two-dimensional materials and van der Waals heterostructures by quantum cavity embedding. The cavity light-matter coupling leads to the formation of exciton-polaritons, a superposition of photons and excitons. Our first-principles study demonstrates a reordering and mixing of bright and dark excitons spectral features and in the case of a type II van-der-Waals heterostructure an inversion of intra- and interlayer excitonic resonances. We further show that the cavity light-matter coupling strongly depends on the dielectric environment and can be controlled by encapsulating the active two-dimensional (2D) crystal in another dielectric material. Our theoretical calculations are based on a newly developed nonperturbative many-body framework to solve the coupled electron-photon Schrödinger equation in a quantum-electrodynamical extension of the Bethe-Salpeter approach. This approach enables the ab initio simulations of exciton-polariton states and their dispersion from weak to strong cavity light-matter coupling regimes. Our method is then extended to treat van der Waals heterostructures and encapsulated 2D materials using a simplified Mott-Wannier description of the excitons that can be applied to very large systems beyond reach for fully ab initio approaches.

Sizable bandgaps of graphene in 3d transition metal intercalated defective graphene/WSe2 heterostructures

Controlling the electronic and magnetic properties of G/TMD (graphene on transition metal dichalcogenide) heterostructures is essential to develop electronic devices. Despite extensive studies in perfecting G/TMDs, most products have various defects due to the limitations of the fabrication techniques, and research investigating the performances of defective G/TMDs is scarce. Here, we conduct a comprehensive study of the effects of 3d transition metal (TM = Sc–Ni) atom-intercalated G/WSe₂ heterostructures, as well as their defective configurations having single vacancies on graphene or WSe₂ sublayers. Interestingly, Ni-intercalated G/WSe₂ exhibits a small band gap of 0.06 eV, a typical characteristic of nonmagnetic semiconductors. With the presence of one single vacancy in graphene, nonmagnetic (or ferromagnetic) semiconductors with sizable band gaps, 0.10–0.51 eV, can be achieved by intercalating Ti, Cr, Fe and Ni atoms into the heterostructures. Moreover, V and Mn doped non-defective and Sc, V, Co doped defective G/WSe₂ can lead to sizable half metallic band gaps of 0.1–0.58 eV. Further analysis indicates that the significant electron transfer from TM atoms to graphene accounts for the opening of a large band gap. Our results provide theoretical guidance to future applications of G/TMD based heterostructures in (spin) electronic devices.

3d transition metal (TM = Sc–Ni) atom-intercalated G/WSe₂ heterostructures, as well as their defective configurations having single vacancies on graphene or WSe₂ sublayers, are studied.

Pulsed-grown graphene for flexible transparent conductors

In the race to find novel transparent conductors for next-generation optoelectronic devices, graphene is supposed to be one of the leading candidates, as it has the potential to satisfy all future requirements. However, the use of graphene as a truly transparent conductor remains a great challenge because its lowest sheet resistance demonstrated so far exceeds that of the commercially available indium tin oxide. The possible cause of low conductivity lies in its intrinsic growth process, which requires further exploration. In this work, I have approached this problem by controlling graphene nucleation during the chemical vapor deposition process as well as by adopting three distinct procedures, including bis(trifluoromethanesulfonyl)amide doping, post annealing, and flattening of graphene films. Additionally, van der Waals stacked graphene layers have been prepared to reduce the sheet resistance effectively. I have demonstrated an efficient and flexible transparent conductor with the extremely low sheet resistance of 40 Ω sq^-1, high transparency (T _r ∼90%), and high mechanical flexibility, making it suitable for electrode materials in future optoelectronic devices.

Recent progress in synthesis, properties, and applications of hexagonal boron nitride-based heterostructures

Featuring an absence of dangling bonds, large band gap, low dielectric constant, and excellent chemical inertness, atomically thin hexagonal boron nitride (h-BN) is considered an ideal candidate for integration with graphene and other 2D materials. During the past years, great efforts have been devoted to the research of h-BN-based heterostructures, from fundamental study to practical applications. In this review we summarize the recent progress in the synthesis, novel properties, and potential applications of h-BN-based heterostructures, especially the synthesis technique. Firstly, various approaches to the preparation of both in-plane and vertically stacked h-BN-based heterostructures are introduced in detail, including top-down strategies associated with exfoliation transfer processes and bottom-up strategies such as chemical vapor deposition (CVD)-based growth. Secondly, we discuss some novel properties arising in these heterostructures. Several promising applications in electronic and optoelectronic devices are also reviewed. Finally, we discuss the main challenges and possible research directions in this field.

Band gap reduction in van der Waals layered 2D materials via a de-charge transfer mechanism

A thickness dependent band gap is commonly found in layered two-dimensional (2D) materials. Here, using a C3N bilayer as a prototypical model, we systematically investigated the evolution of a band gap from a single layer to a bilayer using first principles calculations and tight binding modeling. We show that in addition to the widely known effect of interlayer hopping, de-charge transfer also plays an important role in tuning the band gap. The de-charge transfer is defined with reference to the charge states of atoms in the single layer without stacking, which shifts the energy level and modifies the band gap. Together with band edge splitting induced by the interlayer hopping, the energy level shifting caused by the de-charge transfer determines the size of the band gap in bilayer C3N. Our finding, applicable to other 2D semiconductors, provides an alternative approach for realizing band gap engineering in 2D materials.

Band gap-Tunable Porous Borocarbonitride Nanosheets for High Energy-Density Supercapacitors

Band gap-tunable porous borocarbonitride (BCN) nanosheets were successfully fabricated with cheap and readily available precursors by annealing and exfoliating. The band gap of the as-prepared BCN materials ranges from 5.5 to 1.0 eV; these samples exhibit beneficial structural features suitable for the application in supercapacitors. Especially, the BCN material with a band gap of 1.0 eV exhibits a great specific surface area (600.9 m² g^-1), massive active sites, and excellent conductivity (10.8 S m^-1). In addition, this example displays great specific capacitance (464.5 F g^-1), excellent cycle stability (98.5% performance retention after 10 000 cycles), and ultrahigh energy density (50.4 W h kg^-1, in 1 M Et₄NBF₄ electrolyte). This excellent electrochemical performance and facile effective synthesis of band gap-tunable BCN materials will provide a promising strategy for configuring nanostructured multiple compound electrodes for other energy storage and conversion devices.

Construction of 3D Skeleton for Polymer Composites Achieving a High Thermal Conductivity

Owing to the growing heat removal issue in modern electronic devices, electrically insulating polymer composites with high thermal conductivity have drawn much attention during the past decade. However, the conventional method to improve through-plane thermal conductivity of these polymer composites usually yields an undesired value (below 3.0 Wm^-1 K^-1 ). Here, construction of a 3D phonon skeleton is reported composed of stacked boron nitride (BN) platelets reinforced with reduced graphene oxide (rGO) for epoxy composites by the combination of ice-templated and infiltrating methods. At a low filler loading of 13.16 vol%, the resulting 3D BN-rGO/epoxy composites exhibit an ultrahigh through-plane thermal conductivity of 5.05 Wm^-1 K^-1 as the best thermal-conduction performance reported so far for BN sheet-based composites. Theoretical models qualitatively demonstrate that this enhancement results from the formation of phonon-matching 3D BN-rGO networks, leading to high rates of phonon transport. The strong potential application for thermal management has been demonstrated by the surface temperature variations of the composites with time during heating and cooling.

On the hydrogen evolution reaction activity of graphene–hBN van der Waals heterostructures

This work demonstrates the hydrogen evolution reaction from graphene–hBN van der Waals structures, where individual layers are inert towards this reaction.

Exfoliation of graphene and fluorographene in molecular and ionic liquids

We use molecular dynamics simulations to study the exfoliation of graphene and fluorographene in molecular and ionic liquids using computer experiments in which one layer of the 2D nanomaterial is peeled, in vacuum or with solvent present.

Deposition of topological silicene, germanene and stanene on graphene-covered SiC substrates

Growth of X-enes, such as silicene, germanene and stanene, requires passivated substrates to ensure the survival of their exotic properties. Using first-principles methods, we study as-grown graphene on polar SiC surfaces as suitable substrates. Trilayer combinations with coincidence lattices with large hexagonal unit cells allow for strain-free group-IV monolayers. In contrast to the Si-terminated SiC surface, van der Waals-bonded honeycomb X-ene/graphene bilayers on top of the C-terminated SiC substrate are stable. Folded band structures show Dirac cones of the overlayers with small gaps of about 0.1 eV in between. The topological invariants of the peeled-off X-ene/graphene bilayers indicate the presence of topological character and the existence of a quantum spin Hall phase.

Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics

Fully printed wearable electronics based on two-dimensional (2D) material heterojunction structures also known as heterostructures, such as field-effect transistors, require robust and reproducible printed multi-layer stacks consisting of active channel, dielectric and conductive contact layers. Solution processing of graphite and other layered materials provides low-cost inks enabling printed electronic devices, for example by inkjet printing. However, the limited quality of the 2D-material inks, the complexity of the layered arrangement, and the lack of a dielectric 2D-material ink able to operate at room temperature, under strain and after several washing cycles has impeded the fabrication of electronic devices on textile with fully printed 2D heterostructures. Here we demonstrate fully inkjet-printed 2D-material active heterostructures with graphene and hexagonal-boron nitride (h-BN) inks, and use them to fabricate all inkjet-printed flexible and washable field-effect transistors on textile, reaching a field-effect mobility of ~91 cm2 V-1 s-1, at low voltage (<5 V). This enables fully inkjet-printed electronic circuits, such as reprogrammable volatile memory cells, complementary inverters and OR logic gates.

2D Hybrid Nanomaterials for Selective Detection of NO2 and SO2 Using "Light On and Off" Strategy

In order to distinguish NO₂ and SO₂ gas with one sensor, we designed a paper chip assembled with a 2D g-C₃N₄/rGO stacking hybrid fabricated via a layer-by-layer self-assembly approach. The g-C₃N₄/rGO hybrid exhibited a remarkable photoelectric property due to the construction of a van der Waals heterostructure. For the first time, we have been able to selectively detect NO₂ and SO₂ gas using a "light on and off" strategy. Under the "light off" condition, the g-C₃N₄/rGO sensor exhibited a p-type semiconducting behavior with a low detection limit of 100 ppb of NO₂, but with no response toward SO₂. In contrast, the sensor showed n-type semiconducting behavior which could detect SO₂ at concentration as low as 2 ppm under UV light irradiation. The effective electron transfer among the 2D structure of g-C₃N₄ and rGO nanosheets as well as highly porous structures could play an important role in gas sensing. The different sensing mechanisms at "light on and off" circumstances were also investigated in detail.

Borocarbonitrides, BxCyNz: Synthesis, Characterization, and Properties with Potential Applications

Borocarbonitrides, B_xC_yN_z, constitute a new family of layered two-dimensional materials and can be considered to be derived from graphene. They can be simple composites containing graphene and BN domains or more complex materials possessing B-C and C-N bonds besides B-N and C-C bonds. Properties of these materials depend on the composition, and the method of synthesis, wherein one can traverse from the insulating end (BN) to the conducting end (graphene). In this article, we present an up-to-date review of the various aspects of borocarbonitrides including synthesis, characterization and properties. Some of the properties have potential applications, typical of them being in gas adsorption and energy devices such as supercapacitors, fuel cells and batteries. Performance of borocarbonitrides as catalysts in the electrochemical hydrogen evolution reaction is impressive. It is noteworthy that with certain compositions on borocarbonitrides, field-effect transistors can be fabricated.

A novel electroluminescent device based on a reduced graphene oxide wrapped phosphor (ZnS:Cu,Al) and hexagonal-boron nitride for high-performance luminescence

Reduced graphene oxide (rGO) has recently emerged as a very promising family of exotic carbon material with augmented performance in electronic and optoelectronic devices. Herein, we report an efficient and novel inorganic electroluminescent device geometry, where a new phosphor composite, reduced graphene oxide wrapped ZnS:Cu,Al, acts as an active emitting layer and an exfoliated hexagonal boron nitride (h-BN) as a dielectric layer. The roles of rGO in the active layer as a conductive support and local electric field enhancing agent are attributed to its wrinkles being unraveled compared with other carbon exotic nano-forms such as carbon nanotubes, graphite, charcoal and activated carbon, which significantly improves the brightness of the device (∼50 cd m^-2 for 0.50 wt% rGO/ZnS:Cu,Al at 10 kHz and 110 V with an external quantum efficiency of ∼6.3% ± 0.1% and current efficiency of ∼0.81 ± 0.09 cd A^-1). This new and facile strategy to construct the luminescent devices could be a paradigm shift towards cost effective, highly stable in air (for several days) and energy efficient next generation display devices.

Enhanced Light-Matter Interaction in Graphene/h-BN van der Waals Heterostructures

By investigating the optoelectronic properties of prototypical graphene/hexagonal boron nitride (h-BN) heterostructures, we demonstrate how a nanostructured combination of these materials can lead to a dramatic enhancement of light-matter interaction and give rise to unique excitations. In the framework of ab initio many-body perturbation theory, we show that such heterostructures absorb light over a broad frequency range, from the near-infrared to the ultraviolet (UV), and that each spectral region is characterized by a specific type of excitations. Delocalized electron-hole pairs in graphene dominate the low-energy part of the spectrum, while strongly bound electron-hole pairs in h-BN are preserved in the near-UV. Besides these features, characteristic of the pristine constituents, charge-transfer excitations appear across the visible region. Remarkably, the spatial distribution of the electron and the hole can be selectively tuned by modulating the stacking arrangement of the individual building blocks. Our results open up unprecedented perspectives in view of designing van der Waals heterostructures with tailored optoelectronic features.

Novel hybrid C/BN two-dimensional heterostructures

Here we present an investigation of new quasi-two-dimensional heterostructures based on the alternation of bounded carbon and boron nitride layers (C/BN). We carried out a theoretical study of the atomic structure, stability and electronic properties of the proposed heterostructures. Such ultrathin quasi-two-dimensional C/BN films can be synthesized by means of chemically induced phase transition by connection of the layers of multilayered h-BN/graphene van der Waals heterostructures, which is indicated by the negative phase transition pressure in the calculated phase diagrams (P, T) of the films. It was shown that the band gap value of the C/BN films spans the infrared and visible spectrum. We hope that the proposed films and fabrication method can be considered as a possible route to obtain nanostructures with a controllable band gap in wide energy range. This makes these materials potentially suitable for a variety of applications, including photovoltaics, photoelectronics and more.

Stacking sequence dependent photo-electrocatalytic performance of CVD grown MoS2/graphene van der Waals solids

New layered solids by the combinatorial stacking of different atomic layers are emanating as novel candidates for energy efficient devices. Here, sequentially stacked single layer graphene-molybdenum disulfide (MoS₂) van der Waals (vdW) solids are demonstrated for their efficacy in the catalysis of hydrogen evolution reaction (HER), and importance of their stacking order in tuning the photo-electrocatalytic (PEC) efficiency is unraveled. Single layer graphene and a few layered MoS₂ stacked vdW solids based transparent flexible electrodes were prepared, and a particular stacking sequence where top-graphene: bottom-MoS₂/polydimethylsiloxane (PDMS) geometry (MSGR) exhibited the lowest onset and over potentials and a very high exchange current density (j ₀ ∼ 245 ± 1 μA cm^-2) in acidic HER in comparison to the individual layers and other stacked configuration (MoS₂ on top of graphene on PDMS, GRMS). The HER studies under dark and white light illuminations were conducted to explore the PEC responses of the devices. The augmented HER performance of MSGR is further confirmed from the charge transfer resistance measurements using electrochemical impedance spectroscopy. Role of graphene plasmonics and MoS₂ to graphene electron transfer were studied, and this study unravels the importance of a new factor, stacking order of vdW layers, while designing novel devices from the layered solids.

Graphene, hexagonal boron nitride, and their heterostructures: properties and applications

In recent years, two-dimensional atomic-level thickness crystal materials have attracted widespread interest such as graphene, hexagonal boron nitride (h-BN), silicene, germanium, black phosphorus (BP), transition metal sulfides and so on.

Tuning the Schottky contacts at the graphene/WS2 interface by electric field

Evolution of Schottky barriers of Φ_Bp and Φ_Bn in graphene/WS₂ heterostructures as a function of external electric field.

Covalent cross-linking as a strategy to generate novel materials based on layered (2D) and other low D structures

Covalent linking of 2D structures such as graphene, MoS₂and C₃N₄by employing coupling reactions provides a strategy to generate a variety of materials with new or improved properties.

Charge transfer in crystalline germanium/monolayer MoS2 heterostructures prepared by chemical vapor deposition

Heterostructuring provides novel opportunities for exploring emergent phenomena and applications by developing designed properties beyond those of homogeneous materials. Advances in nanoscience enable the preparation of heterostructures formed incommensurate materials. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, are of particular interest due to their distinct physical characteristics. Recently, 2D/2D heterostructures have opened up new research areas. However, other heterostructures such as 2D/three-dimensional (3D) materials have not been thoroughly studied yet although the growth of 3D materials on 2D materials creating 2D/3D heterostructures with exceptional carrier transport properties has been reported. Here we report a novel heterostructure composed of Ge and monolayer MoS₂, prepared by chemical vapor deposition. A single crystalline Ge (110) thin film was grown on monolayer MoS₂. The electrical characteristics of Ge and MoS₂ in the Ge/MoS₂ heterostructure were remarkably different from those of isolated Ge and MoS₂. The field-effect conductivity type of the monolayer MoS₂ is converted from n-type to p-type by growth of the Ge thin film on top of it. Undoped Ge on MoS₂ is highly conducting. The observations can be explained by charge transfer in the heterostructure as opposed to chemical doping via the incorporation of impurities, based on our first-principles calculations.

A Large-Area Transferable Wide Band Gap 2D Silicon Dioxide Layer

An atomically smooth silica bilayer is transferred from the growth substrate to a new support via mechanical exfoliation at millimeter scale. The atomic structure and morphology are maintained perfectly throughout the process. A simple heating treatment results in complete removal of the transfer medium. Low-energy electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy, and environmental scanning electron microscopy show the success of the transfer steps. Excellent chemical and thermal stability result from the absence of dangling bonds in the film structure. By adding this wide band gap oxide to the toolbox of 2D materials, possibilities for van der Waals heterostructures will be broadened significantly.

Van der Waals pressure and its effect on trapped interlayer molecules

Van der Waals assembly of two-dimensional crystals continue attract intense interest due to the prospect of designing novel materials with on-demand properties. One of the unique features of this technology is the possibility of trapping molecules between two-dimensional crystals. The trapped molecules are predicted to experience pressures as high as 1 GPa. Here we report measurements of this interfacial pressure by capturing pressure-sensitive molecules and studying their structural and conformational changes. Pressures of 1.2±0.3 GPa are found using Raman spectrometry for molecular layers of 1-nm in thickness. We further show that this pressure can induce chemical reactions, and several trapped salts are found to react with water at room temperature, leading to two-dimensional crystals of the corresponding oxides. This pressure and its effect should be taken into account in studies of van der Waals heterostructures and can also be exploited to modify materials confined at the atomic interfaces.