Tuning radiative recombination in Cu-doped nanocrystals via electrochemical control of surface trapping

Synthesis and hybridization of CuInS2 nanocrystals for emerging applications

Copper indium sulfide (CuInS2) is a ternary A(I)B(III)X(VI)2-type semiconductor featuring a direct bandgap with a high absorption coefficient. In attempts to explore their practical applications, nanoscale CuInS2 has been synthesized with crystal sizes down to the quantum confinement regime. The merits of CuInS2 nanocrystals (NCs) include wide emission tunability, a large Stokes shift, long decay time, and eco-friendliness, making them promising candidates in photoelectronics and photovoltaics. Over the past two decades, advances in wet-chemistry synthesis have achieved rational control over cation-anion reactivity during the preparation of colloidal CuInS2 NCs and post-synthesis cation exchange. The precise nano-synthesis coupled with a series of hybridization strategies has given birth to a library of CuInS2 NCs with highly customizable photophysical properties. This review article focuses on the recent development of CuInS2 NCs enabled by advanced synthetic and hybridization techniques. We show that the state-of-the-art CuInS2 NCs play significant roles in optoelectronic and biomedical applications.

The impact of spatially heterogeneous chemical doping on the electronic properties of CdSe quantum dots: insights from ab initio computation

The introduction of copper (Cu) impurity in semiconductor CdSe quantum dots (QDs) gives rise to unique photoluminescence (PL) bands exhibiting distinctive characteristics, like broad line width, significant Stokes shift, and complex temporal decay. The atomistic origins of these spectral features are yet to be understood comprehensively. We employed multiple computational techniques to systematically study the impact of the spatial heterogeneity of Cu atoms on the stability and photophysical properties, including the emission linewidth of doped QDs under ambient conditions. The Cu substitution introduces a spin-polarized intragap state, the energetic position of which is strongly dependent on the dopant location and causes spectral broadening in QD ensembles. Furthermore, the dopant dynamics under ambient conditions are significantly influenced by the specific arrangement of Cu within the QDs. The dynamic electronic structures of surface-doped CdSe illustrate more pronounced perturbations and vary the mid-gap state position more drastically than those of the core-doped QDs. Vibronic coupling broadens the photoluminescence peaks associated with the conduction band-to-defect level transition for individual QDs. These insights into the dynamic structure-photophysical property relationship suggest viable approaches, such as tuning the operational temperature and selective co-doping, to enhance the functional performances of doped CdSe QDs strategically.

Transition Metal Ions Influence the Performance of Photodetector of Two-Dimensional CdS Nanoplatelets

Transition metal-doped two-dimensional (2D) semiconductor nanoplatelets (NPLs) with atomically precise thickness have attracted much research interest due to their inherent photo-physical properties. In this work, we have synthesized 2D Cu-doped CdS NPLs, investigated the charge transfer dynamics using ultrafast transient absorption spectroscopy, and fabricated an efficient photodetector device. A large Stoke's shifted emission at ~685 nm with an average lifetime of about ~1.45 μs is observed in Cu-doped CdS NPLs. Slower bleach recovery kinetics leads to large charge carrier separation in Cu-doped NPLs which is beneficial for photodetector applications. Cu-doped NPLs-based photodetectors exhibit high photocurrent, fast response (~120 ms), ~600 times higher photoresponsivity, and ~300 times higher detectivity (~4.1×1013 Jones) than undoped CdS NPLs. These excellent properties of Cu-doped CdS NPLs make this material an efficient alternative for next-generation optoelectronic devices.

Optically detected magnetic resonance spectroscopic analyses on the role of magnetic ions in colloidal nanocrystals

Incorporating magnetic ions into semiconductor nanocrystals has emerged as a prominent research field for manipulating spin-related properties. The magnetic ions within the host semiconductor experience spin-exchange interactions with photogenerated carriers and are often involved in the recombination routes, stimulating special magneto-optical effects. The current account presents a comparative study, emphasizing the impact of engineering nanostructures and selecting magnetic ions in shaping carrier-magnetic ion interactions. Various host materials, including the II-VI group, halide perovskites, and I-III-VI2 in diverse structural configurations such as core/shell quantum dots, seeded nanorods, and nanoplatelets, incorporated with magnetic ions such as Mn2+, Ni2+, and Cu1+/2+ are highlighted. These materials have recently been investigated by us using state-of-the-art steady-state and transient optically detected magnetic resonance (ODMR) spectroscopy to explore individual spin-dynamics between the photogenerated carriers and magnetic ions and their dependence on morphology, location, crystal composition, and type of the magnetic ion. The information extracted from the analyses of the ODMR spectra in those studies exposes fundamental physical parameters, such as g-factors, exchange coupling constants, and hyperfine interactions, together providing insights into the nature of the carrier (electron, hole, dopant), its local surroundings (isotropic/anisotropic), and spin dynamics. The findings illuminate the importance of ODMR spectroscopy in advancing our understanding of the role of magnetic ions in semiconductor nanocrystals and offer valuable knowledge for designing magnetic materials intended for various spin-related technologies.

Beyond Universal Volume Scaling: Tailoring Two-Photon Absorption in Nanomaterials by Heterostructure Design

Colloidal semiconductor nanomaterials present broadband, with large cross-section, two-photon absorption (2PA) spectra, which turn them into an important platform for applications that benefit from a high nonlinear optical response. Despite that, to date, the only means to control the magnitude of the 2PA cross-section is by changing the nanoparticle volume, as it follows a universal volume scale, independent of the material composition. As the emission spectrum is connected utterly to the nanomaterial dimensions, for a given material, the magnitude of the nonlinear optical response is also coupled to the emission spectra. Here, we demonstrate a means to decouple both effects by exploring the 2PA response of different types of heterostructures, tailoring the volume dependence of the 2PA cross-section due to the different dependence of the density of final states on the nanoparticle volume. By heterostructure engineering, one can obtain 1 order of magnitude enhancement of the 2PA cross-section with minimum emission spectra shift.

Electrochemical Control over the Optical Properties of II-VI Colloidal Nanoplatelets by Tailoring the Station of Extra Charge Carriers

An electrochemical (EC) method has been successfully applied to regulate the optical properties of nanocrystals, such as reducing their gain threshold by EC doping and enhancing their photoluminescence intensity by EC filling of trap states. However, the processes of EC doping and filling are rarely reported simultaneously in a single study, hindering the understanding of their underlying interactions. Here, we report the spectroelectrochemical (SEC) studies of quasi-two-dimensional nanoplatelets (NPLs), intending to clarify the above issues. EC doping is successfully achieved in CdSe/CdZnS core/shell NPLs, with red-shifted photoluminescence and a reversal of the emission intensity trend. The injection of extra electrons (holes) into the conduction (valence) band edges needs high bias voltages, while the passivation/activation process of trap states with the shift of Fermi level starts at lower EC potentials. Then, we explore the role of excitation light conditions in these processes, different from existing SEC research studies. Interestingly, increasing the laser power density can hinder EC electron injection, whereas decreasing the excitation energy evades the passivation process of trap states. Moreover, we demonstrate that EC control strategies can be used to realize color display and anti-counterfeiting applications via simultaneously tailoring the photoluminescence intensity of red- and green-emitting NPLs.

Observation of Phonon Cascades in Cu-Doped Colloidal Quantum Wells

Electronic doping has endowed colloidal quantum wells (CQWs) with unique optical and electronic properties, holding great potential for future optoelectronic device concepts. Unfortunately, how photogenerated hot carriers interact with phonons in these doped CQWs still remains an open question. Here, through investigating the emission properties, we have observed an efficient phonon cascade process (i.e., up to 27 longitudinal optical phonon replicas are revealed in the broad Cu emission band at room temperature) and identified a giant Huang-Rhys factor (S ≈ 12.4, more than 1 order of magnitude larger than reported values of other inorganic semiconductor nanomaterials) in Cu-doped CQWs. We argue that such an ultrastrong electron-phonon coupling in Cu-doped CQWs is due to the dopant-induced lattice distortion and the dopant-enhanced density of states. These findings break the widely accepted consensus that electron-phonon coupling is typically weak in quantum-confined systems, which are crucial for optoelectronic applications of doped electronic nanomaterials.

Electrochemical control of emission enhancement in solid-state nitrogen-doped carbon quantum dots

Because of their excellent optical and electrical properties, doped carbon quantum dots (CQDs) are expected to be used in novel film optoelectronic devices such as light-emitting diodes and solar cells. However, these device advancements are currently hindered by the elusive photophysical process of doped CQDs in solid-state films. Here, the optical properties of nitrogen-doped CQD (N-CQD) films are studied using spectro-electrochemical (SEC) methods. A distinctive photoluminescence (PL) enhancement phenomenon is observed, in which the PL intensity of the N-CQD film can be increased in both positive and negative electrochemical potential sweeps. The effect of positive potential on PL enhancement is greater (∼340% at +1.4 V), while that of negative potential is slightly weaker (∼10% at -1.4 V). To the best of our knowledge, no similar brightening process has been reported in all previous SEC studies on a variety of QDs, wherein the emission intensity can only exhibit enhancement under positive or negative potential at most. We propose that the above PL brightening is related to the weakened π-π stacking effect after electrochemical charge injection and nitrogen doping plays a crucial role in it. Finally, a low hysteresis reversible electrochemistry regulation of the PL spectrum can be achieved by increasing electrolyte fluidity with argon gas bubbling to reduce local charge aggregation.

Design Principles of Colloidal Nanorod Heterostructures

Anisotropic heterostructures of colloidal nanocrystals embed size-, shape-, and composition-dependent electronic structure within variable three-dimensional morphology, enabling intricate design of solution-processable materials with high performance and programmable functionality. The key to designing and synthesizing such complex materials lies in understanding the fundamental thermodynamic and kinetic factors that govern nanocrystal growth. In this review, nanorod heterostructures, the simplest of anisotropic nanocrystal heterostructures, are discussed with respect to their growth mechanisms. The effects of crystal structure, surface faceting/energies, lattice strain, ligand sterics, precursor reactivity, and reaction temperature on the growth of nanorod heterostructures through heteroepitaxy and cation exchange reactions are explored with currently known examples. Understanding the role of various thermodynamic and kinetic parameters enables the controlled synthesis of complex nanorod heterostructures that can exhibit unique tailored properties. Selected application prospects arising from such capabilities are then discussed.

Mn-Doped Multiple Quantum Well Perovskites for Efficient Large-Area Luminescent Solar Concentrators

Luminescent solar concentrators (LSCs) can be used as large-area sunlight collectors, which show great potential in the application of building-integrated photovoltaic areas. Achieving highly efficient LSCs requires the suppression of reabsorption losses while maintaining a high photoluminescence quantum yield (PLQY) and broad absorption. Perovskites as the superstar fluorophores have recently emerged as candidates for large-area LSCs. However, highly emissive perovskites with a large Stokes shift and broad absorption have not been obtained up to now. Here, we devised a facile synthetic route to obtain Mn-doped multiple quantum well (MQW) Br-based perovskites. The Br-based perovskite host ensures broad absorption. Efficient energy transfer from the exciton to the Mn dopant produces a large Stokes shift and high PLQY simultaneously. By further coating the perovskites with Al₂O₃, the stability and PLQY are greatly elevated. A large area of liquid LSC (40 cm × 40 cm × 0.5 cm) is fabricated, which possesses an internal quantum efficiency (η_int) of 47% and an optical conversion efficiency (η_opt) reaching 11 ± 1%, which shows the highest value for large-area LSCs.

Band Structure Engineering and Defect Passivation of Cu x Ag1-x InS2/ZnS Quantum Dots to Enhance Photoelectrochemical Hydrogen Evolution

The AgInS₂ colloidal quantum dot (CQD) is a promising photoanode material with a relatively wide band gap for photoelectrochemical (PEC) solar-driven hydrogen (H₂) evolution. However, the unsuitable energy band structure still forms undesired energy barriers and leads to serious charge carrier recombination with low solar to hydrogen conversion efficiency. Here, we propose to use the ZnS shell for defect passivation and Cu ion doping for band structure engineering to design and synthesize a series of Cu _x Ag_1-x InS₂/ZnS CQDs. ZnS shell-assisted defect passivation suppresses charge carrier recombination because of the formation of the core/shell heterojunction interface, enhancing the performance of PEC devices with better charge separation and stability. More importantly, the tunable Cu doping concentration in AgInS₂ CQDs leads to the shift of the quantum dot band alignment, which greatly promotes the interfacial charge separation and transfer. As a result, Cu _x Ag_1-x InS₂/ZnS CQD photoanodes for PEC cells exhibit an enhanced photocurrent of 5.8 mA cm^-2 at 0.8 V versus the RHE, showing excellent photoelectrocatalytic activity for H₂ production with greater chemical-/photostability.

Insights into the Oxidation State of Cu Dopants in II-VI Semiconductor Nanocrystals

Luminescent Cu-doped semiconductor nanocrystals have played a pivotal role in the emergence of lighting and display applications for a long time. However, consensus regarding the Cu oxidation state and hence their emission mechanism has not been attained. Distinction between seemingly simple optically and magnetically active Cu²⁺ and inactive Cu¹⁺ has surprisingly been the subject matter of debate in the literature for more than a decade. In this Perspective, we first discuss the fundamental quantum mechanical phenomenon explaining the optical properties of the monovalent and divalent Cu dopants. We then focus down on various techniques used to differentiate between these two fundamental mechanisms, their benefits, and their pitfalls arising in large part because of the lack of spatial separation. Hence, to obtain a cohesive story consistent with all the observations, we discuss recent results from single-molecule spectroscopy to understand the optical properties and hence the oxidation state of internally doped Cu in doped nanocrystals.

Effect of Copper Doping on Electronic Structure and Optical Absorption of Cd33Se33 Quantum Dots

The photophysical properties of Cu-doped CdSe quantum dots (QDs) can be affected by the oxidation state of Cu impurity, but disagreement still exists on the Cu oxidation state (+1 or +2) in these QDs, which is debated and poorly understood for many years. In this work, by using density functional theory (DFT)-based calculations with the Heyd-Scuseria-Ernzerhof (HSE) screened hybrid functional, we clearly demonstrate that the incorporation of Cu dopants into the surface of the magic sized Cd33Se33 QD leads to non-magnetic Cu 3d orbitals distribution and Cu+1 oxidation state, while doping Cu atoms in the core region of QDs can lead to both Cu+1 and Cu+2 oxidation states, depending on the local environment of Cu atoms in the QDs. In addition, it is found that the optical absorption of the Cu-doped Cd33Se33 QD in the visible region is mainly affected by Cu concentration, while the absorption in the infrared regime is closely related to the oxidation state of Cu. The present results enable us to use the doping of Cu impurity in CdSe QDs to achieve special photophysical properties for their applications in high-efficiency photovoltaic devices. The methods used here to resolve the electronic and optical properties of Cu-doped CdSe QDs can be extended to other II-VI semiconductor QDs incorporating transition-metal ions with variable valence.

Optical and Magneto-Optical Properties of Donor-Bound Excitons in Vacancy-Engineered Colloidal Nanocrystals

Controlled insertion of electronic states within the band gap of semiconductor nanocrystals (NCs) is a powerful tool for tuning their physical properties. One compelling example is II-VI NCs incorporating heterovalent coinage metals in which hole capture produces acceptor-bound excitons. To date, the opposite donor-bound exciton scheme has not been realized because of the unavailability of suitable donor dopants. Here, we produce a model system for donor-bound excitons in CdSeS NCs engineered with sulfur vacancies (V_S) that introduce a donor state below the conduction band (CB), resulting in long-lived intragap luminescence. V_S-localized electrons are almost unaffected by trapping, and suppression of thermal quenching boosts the emission efficiency to 85%. Magneto-optical measurements indicate that the V_S are not magnetically coupled to the NC bands and that the polarization properties are determined by the spin of the valence-band photohole, whose spin flip is massively slowed down due to suppressed exchange interaction with the donor-localized electron.

Tuning radiative lifetimes in semiconductor quantum dots

Photonic devices stand to benefit from the development of chromophores with tunable, precisely controlled spontaneous emission lifetimes. Here, we demonstrate a method to continuously tune the radiative emission lifetimes of a class of chromophores by varying the density of electronic states involved in the emission process. In particular, we examined the peculiar composition-dependent electronic structure of copper doped CdZnSe quantum dots. It is shown that the nature and density of electronic states involved with the emission process is a function of copper inclusion level, providing a very direct handle for controlling the spontaneous lifetimes. The spontaneous emission lifetimes are estimated by examining the ratios of emission lifetimes to absolute quantum yields and also measured directly by ultrafast luminescence upconversion experiments. We find excellent agreement between these classes of experiments. This scheme enables us to tune spontaneous emission lifetimes by three orders of magnitude from ∼15 ns to over ∼7 µs, which is unprecedented in existing lumophores.

Controlled synthesis of luminescent CIZS/ZnS/ZnS core/shell/shell nanoheterostructures

We report a systematic investigation of the influence of reaction temperatures and times on the morphologies and optical properties of resulting CIZS/ZnS/ZnS quantum nanoheterostructures with “giant” ZnS shell (size >10 nm).

Recent research on the luminous mechanism, synthetic strategies, and applications of CuInS2 quantum dots

We discuss the synthesis and luminescence mechanisms of CuInS₂ QDs, the strategies to improve their luminous performance and their potential application in light-emitting devices, solar energy conversion, and the biomedical field.

High Photon Upconversion Efficiency with Hybrid Triplet Sensitizers by Ultrafast Hole-Routing in Electronic-Doped Nanocrystals

Low-power photon upconversion (UC) based on sensitized triplet-triplet annihilation (sTTA) is considered as the most promising upward wavelength-shifting technique to enhance the light-harvesting capability of solar devices. Colloidal nanocrystals (NCs) with conjugated organic ligands have been recently proposed to extend the limited light-harvesting capability of molecular absorbers. Key to their functioning is efficient energy transfer (ET) from the NC to the triplet state of the ligands that sensitize free annihilator moieties responsible for the upconverted luminescence. The ET efficiency is typically limited by parasitic processes, above all nonradiative hole-transfer to the ligand highest occupied molecular orbital (HOMO). Here, a new exciton-manipulation approach is demonstrated that enables loss-free ET by electronically doping CdSe NCs with gold impurities that introduce a hole-accepting intragap state above the HOMO energy of 9-anthracene acid ligands. Upon photoexcitation, the NC photoholes are rapidly routed to the Au-level, producing a long-lived bound exciton in perfect resonance with the ligand triplet. This hinders hole-transfer leading to ≈100% efficient ET that translates into an upconversion quantum yield as high as ≈12% (≈24% in the normalized definition), which is the highest performance for NC-based upconverters based on sTTA to date and approaches the record efficiency of optimized organic systems.

Near-infrared-emitting CIZSe/CIZS/ZnS colloidal heteronanonail structures

Multicomponent quantum nanostructures have attracted significant attention due to their potential applications in photovoltaics, optoelectronics and bioimaging. However, the preparation of anisotropic quaternary nanoheterostructures such as Cu-In-Zn-S(Se) (CIZS and CIZSe) is still very poorly explored and understood. Here, we report the synthesis and studies of NIR emissive CIZSe/CIZS/ZnS core/shell/shell nanoheterostructures with a unique hetero-nanonail (HNN) morphology. In our approach, wurtzite (WZ) CIZSe/CIZS core/shell QDs have been prepared by depositing a CIZS shell onto a previously synthesized chalcopyrite CIZSe QD core using a seeded growth technique. Following careful control of the ZnS shell growth resulted in the formation of the distinct nail-like CIZSe/CIZS/ZnS nanoheterostructure, where the CIZSe/CIZS core/shell QD is located near the "head" of the nail. The emission in the NIR region of the CIZSe/CIZS/ZnS nanocrystals is assigned to the CIZSe/CIZS core/shell quantum nanostructure. The CIZSe/CIZS/ZnS HNNs are particularly interesting due to a range of potential applications including bioimaging, biosensing, energy harvesting and NIR photodetectors. Finally, we also report the successful controlled growth of gold nanoparticles on the surface of the CIZSe/CIZS/ZnS nanonail-like heterostructure and the investigation of the resulting multimodal nanocomposites.

Copper Doping in II-VI Semiconductor Nanocrystals: Single-Particle Fluorescence Study

Copper doping in II-VI semiconductor nanocrystals (NCs) has sparked enormous debate regarding the oxidation state of Cu ions and their hugely differing consequences in optoelectronic applications. The identity of a magnetically active Cu²⁺ ion or a magnetically inactive d¹⁰ Cu⁺ ion has generally been probed using optical techniques, and confusion arises from the spatial clutter that is part of the technique. One major probe that could declutter the data obtained from ensemble emission is single-particle fluorescence spectroscopy. In this work, using this very technique along with X-ray absorption spectroscopy probing the local environment of dopant ions, we study Cu-doped II-VI semiconductor NCs to find conclusive evidence on the oxidation state of Cu dopants and hence the mechanism of their emission. Detailed analysis of blinking properties has been used to study the single-particle nature of the NCs.

Emergence of Impurity-Doped Nanocrystal Light-Emitting Diodes

In recent years, impurity-doped nanocrystal light-emitting diodes (LEDs) have aroused both academic and industrial interest since they are highly promising to satisfy the increasing demand of display, lighting, and signaling technologies. Compared with undoped counterparts, impurity-doped nanocrystal LEDs have been demonstrated to possess many extraordinary characteristics including enhanced efficiency, increased luminance, reduced voltage, and prolonged stability. In this review, recent state-of-the-art concepts to achieve high-performance impurity-doped nanocrystal LEDs are summarized. Firstly, the fundamental concepts of impurity-doped nanocrystal LEDs are presented. Then, the strategies to enhance the performance of impurity-doped nanocrystal LEDs via both material design and device engineering are introduced. In particular, the emergence of three types of impurity-doped nanocrystal LEDs is comprehensively highlighted, namely impurity-doped colloidal quantum dot LEDs, impurity-doped perovskite LEDs, and impurity-doped colloidal quantum well LEDs. At last, the challenges and the opportunities to further improve the performance of impurity-doped nanocrystal LEDs are described.

Scalable Preparation of Low-Defect Graphene by Urea-Assisted Liquid-Phase Shear Exfoliation of Graphite and Its Application in Doxorubicin Analysis

The mass production of graphene is of great interest for commercialization and industrial applications. Here, we demonstrate that high-quality graphene nanosheets can be produced in large quantities by liquid-phase shear exfoliation under ambient conditions in organic solvents, such as 1-methyl-2-pyrrolidinone (NMP), with the assistance of urea as a stabilizer. We can achieve low-defect graphene (LDG) using this approach, which is relatively simple and easily available, thereby rendering it to be an efficient route for the mass production of graphene. We also demonstrate the electrochemical sensing of an LDG-modified electrode for the determination of doxorubicin (DOX). The sensor shows an enhanced electrocatalytic property towards DOX, leading to a high sensitivity (7.23 × 10^-1 μM/μA) with a detection limit of 39.3 nM (S/N = 3).

Evaluation of dopant energy and Stokes shift in Cu-doped CdS quantum dots via spectro-electrochemical probing

Copper (Cu) doped II–VI semiconductor quantum dots (QDs) manifest high luminescent dopant emission with excellent tunability.

Cu-doped quantum dots: a new class of near-infrared emitting fluorophores for bioanalysis and bioimaging

Transition metal ion-doped quantum dots (QDs) exhibit unique optical and photophysical properties that offer significant advantages over undoped QDs, such as larger Stokes shift to avoid self-absorption/energy transfer, longer excited-state lifetimes, wider spectral window, and improved chemical and thermal stability. Among the doped QDs emitters, Cu is widely introduced into the doped QDs as novel, efficient, stable, and tunable optical materials that span a wide spectrum from blue to near-infrared (NIR) light. Their unique physical and chemical characteristics enable the use of Cu-doped QDs as NIR labels for bioanalysis and bioimaging. In this review, we discuss doping mechanisms and optical properties of Cu-doped QDs that are capable of NIR emission. Applications of Cu-doped QDs in in vitro biosensing and in in vivo bioimaging are highlighted. Moreover, a prospect of the future of Cu-doped QDs for bioanalysis and bioimaging are also summarized.

High-Performance Quantum Dots with Synergistic Doping and Oxide Shell Protection Synthesized by Cation Exchange Conversion of Ternary-Composition Nanoparticles

The insertion of cation impurities into quantum dots (QDs) as a dopant has been proved to be an efficient way to tailor their optical, electronic, and magnetic properties; however, the low quantum yield (QY) and poor photostability strongly limit their further applications. We report a strategy to coat a thin oxide shell around the heterovalent doped QDs to enhance their QYs and photostabilities simultaneously. In the case of Ag⁺-doped CdS QDs, the controlled cation exchange reaction between Cd²⁺ and ternary Ag₃SbS₃ nanoparticles not only realizes the Ag⁺ doping in CdS QDs but also generates a thin Sb₂O₃ shell around the surface of the QDs. Enabled by such, as-prepared CdS:Ag@Sb₂O₃ QDs exhibited enhanced photostability and high QY of 66.5%. We envision that the findings presented here will inspire more novel protocols for advancing the practical applications of doped QDs.

Thermally Stable Copper(II)-Doped Cesium Lead Halide Perovskite Quantum Dots with Strong Blue Emission

All-inorganic perovskite quantum dots (QDs) have emerged as potentially promising materials for lighting and displays, but their poor thermal stability restricts their practical application. In addition, optical characteristics of the blue-emitting CsPbX₃ QDs lag behind their red- and green-emitting counterparts. Herein, we addressed these two issues by doping divalent Cu²⁺ ions into the perovskite lattice to form CsPb_{1- x}Cu _xX₃ QDs. Extended X-ray absorption fine structure (EXAFS) measurements reveal that doping smaller Cu²⁺ guest ions induces a lattice contraction and eliminates halide vacancies, which leads to an increased lattice formation energy and improved short-range order of the doped perovskite QDs. This results in the improvement of both the thermal stability and the optical performance of CsPb_{1- x}Cu _x(Br/Cl)₃ QDs, which exhibit bright blue photoluminescence at 450-460 nm, with a high quantum yield of over 80%. The CsPb_{1- x}Cu _xX₃ QD films maintain stable luminescence performance even when annealed at temperatures of over 250 °C.

Quantized Electronic Doping towards Atomically Controlled "Charge-Engineered" Semiconductor Nanocrystals

"Charge engineering" of semiconductor nanocrystals (NCs) through so-called electronic impurity doping is a long-standing challenge in colloidal chemistry and holds promise for ground-breaking advancements in many optoelectronic, photonic, and spin-based nanotechnologies. To date, our knowledge is limited to a few paradigmatic studies on a small number of model compounds and doping conditions, with important electronic dopants still unexplored in nanoscale systems. Equally importantly, fine-tuning of charge engineered NCs is hampered by the statistical limitations of traditional approaches. The resulting intrinsic doping inhomogeneity restricts fundamental studies to statistically averaged behaviors and complicates the realization of advanced device concepts based on their advantageous functionalities. Here we aim to address these issues by realizing the first example of II-VI NCs electronically doped with an exact number of heterovalent gold atoms, a known p-type acceptor impurity in bulk chalcogenides. Single-dopant accuracy across entire NC ensembles is obtained through a novel non-injection synthesis employing ligand-exchanged gold clusters as "quantized" dopant sources to seed the nucleation of CdSe NCs in organic media. Structural, spectroscopic, and magneto-optical investigations trace a comprehensive picture of the physical processes resulting from the exact doping level of the NCs. Gold atoms, doped here for the first time into II-VI NCs, are found to incorporate as nonmagnetic Au⁺ species activating intense size-tunable intragap photoluminescence and artificially offsetting the hole occupancy of valence band states. Fundamentally, the transient conversion of Au⁺ to paramagnetic Au²⁺ (5d⁹ configuration) under optical excitation results in strong photoinduced magnetism and diluted magnetic semiconductor behavior revealing the contribution of individual paramagnetic impurities to the macroscopic magnetism of the NCs. Altogether, our results demonstrate a new chemical approach toward NCs with physical functionalities tailored to the single impurity level and offer a versatile platform for future investigations and device exploitation of individual and collective impurity processes in quantum confined structures.

Optoelectronic Properties of CuI Photoelectrodes

Detailed mechanistic understanding of the optoelectronic features is a key factor in designing efficient and stable photoelectrodes. In situ spectroelectrochemical methods were employed to scrutinize the effect of trap states on the optical and electronic properties of CuI photoelectrodes and to assess their stability against (photo)electrochemical corrosion. The excitonic band in the absorption spectrum and the Raman spectral features were directly influenced by the applied bias potential. These spectral changes exhibit a good correlation with the alterations observed in the charge-transfer resistance. Interestingly, the population and depopulation of the trap states, which are responsible for the changes in both the optical and electronic properties, occur in a different potential/energy regime. Although cathodic photocorrosion of CuI is thermodynamically favored, this process is kinetically hindered, thus providing good stability in photoelectrochemical operation.

Optical Properties, Synthesis, and Potential Applications of Cu-Based Ternary or Quaternary Anisotropic Quantum Dots, Polytypic Nanocrystals, and Core/Shell Heterostructures

This review summaries the optical properties, recent progress in synthesis, and a range of applications of luminescent Cu-based ternary or quaternary quantum dots (QDs). We first present the unique optical properties of the Cu-based multicomponent QDs, regarding their emission mechanism, high photoluminescent quantum yields (PLQYs), size-dependent bandgap, composition-dependent bandgap, broad emission range, large Stokes’ shift, and long photoluminescent (PL) lifetimes. Huge progress has taken place in this area over the past years, via detailed experimenting and modelling, giving a much more complete understanding of these nanomaterials and enabling the means to control and therefore take full advantage of their important properties. We then fully explore the techniques to prepare the various types of Cu-based ternary or quaternary QDs (including anisotropic nanocrystals (NCs), polytypic NCs, and spherical, nanorod and tetrapod core/shell heterostructures) are introduced in subsequent sections. To date, various strategies have been employed to understand and control the QDs distinct and new morphologies, with the recent development of Cu-based nanorod and tetrapod structure synthesis highlighted. Next, we summarize a series of applications of these luminescent Cu-based anisotropic and core/shell heterostructures, covering luminescent solar concentrators (LSCs), bioimaging and light emitting diodes (LEDs). Finally, we provide perspectives on the overall current status, challenges, and future directions in this field. The confluence of advances in the synthesis, properties, and applications of these Cu-based QDs presents an important opportunity to a wide-range of fields and this piece gives the reader the knowledge to grasp these exciting developments.

Tuning and Probing the Distribution of Cu+ and Cu2+ Trap States Responsible for Broad-Band Photoluminescence in CuInS2 Nanocrystals

The processes that govern radiative recombination in ternary CuInS₂ (CIS) nanocrystals (NCs) have been heavily debated, but recently, several research groups have come to the same conclusion that a photoexcited electron recombines with a localized hole on a Cu-related trap state. Furthermore, it has been observed that single CIS NCs display narrower photoluminescence (PL) line widths than the ensemble, which led to the conclusion that within the ensemble there is a distribution of Cu-related trap states responsible for PL. In this work, we probe this trap-state distribution with in situ photoluminescence spectroelectrochemistry. We find that Cu²⁺ states result in individual "dark" nanocrystals, whereas Cu⁺ states result in "bright" NCs. Furthermore, we show that we can tune the PL position, intensity, and line width in a cyclic fashion by injecting or removing electrons from the trap-state distribution, thereby converting a subset of "dark" Cu²⁺ containing NCs into "bright" Cu⁺ containing NCs and vice versa. The electrochemical injection of electrons results in brightening, broadening, and a red shift of the PL, in line with the activation of a broad distribution of "dark" NCs (Cu²⁺ states) into "bright" NCs (Cu⁺ states) and a rise of the Fermi level within the ensemble trap-state distribution. The opposite trend is observed for electrochemical oxidation of Cu⁺ states into Cu²⁺. Our work shows that there is a direct correlation between the line width of the ensemble Cu⁺/Cu²⁺ trap-state distribution and the characteristic broad-band PL feature of CIS NCs and between Cu²⁺ cations in the photoexcited state (bright) and in the electrochemically oxidized ground state (dark).

Spectroelectrochemical Signatures of Surface Trap Passivation on CdTe Nanocrystals

The photoluminescence (PL) quantum yield of semiconductor nanocrystals (NCs) is hampered by in-gap trap states due to dangling orbitals on the surface of the nanocrystals. While crucial for the rational design of nanocrystals, the understanding of the exact origin of trap states remains limited. Here, we treat CdTe nanocrystal films with different metal chloride salts and we study the effect on their optical properties with in situ spectroelectrochemistry, recording both changes in absorption and photoluminescence. For untreated CdTe NC films we observe a strong increase in the PL intensity as the Fermi-level is raised electrochemically and trap states in the bandgap become occupied with electrons. Upon passivation of these in-gap states we observe an increase in the steady state PL and, for the best treatments, we observe that the PL no longer depends on the position of the Fermi level in the band gap, demonstrating the effective removal of trap states. The most effective treatment is obtained for Z-type passivation with CdCl₂, for which the steady state PL increased by a factor 40 and the PL intensity became nearly unaffected by the applied potential. X-ray Photoelectron Spectroscopy measurements show that treatment with ZnCl₂ mainly leads to X-type passivation with chloride ions, which increased the PL intensity by a factor four and made the PL less susceptible to modulation by applying a potential with respect to unpassivated nanocrystal films. We elucidate the spectroelectrochemical signatures of trap states within the bandgap and conclude that undercoordinated Te at the surface constitutes the largest contribution to in-gap trap states, but that other surface states that likely originate on Cd atoms should also be considered.

Effect of surface/interfacial defects on photo-stability of thick-shell CdZnSeS/ZnS quantum dots

High color-purity CdZnSeS alloy cores and CdZnSeS/ZnS core/shell quantum dots (QDs) with 3, 11 and 17 monolayer (ML) ZnS shells are synthesized, and the narrow emission (full-width at half-maximum: ∼21 nm) is ascribed to the high size uniformity of QDs and the narrow linewidth of single QD spectra. Ultraviolet (UV) irradiation experiments show that the photo-stabilities of the samples improve remarkably with increasing shell thickness, but the photo-stability clearly decreases when the shell thickness is further increased to 17 MLs. Spectroelectrochemical (SEC) measurements indicate that the exciton recombination of QDs is mainly affected by surface electronic traps, and the interaction between exciton recombination centers and surface traps is significantly weakened with the increase in shell thickness due to the decreased wave function overlap of the exciton and surface traps. In the case of the 17 ML shell, the reduced photo-stability is due to increased interfacial defects caused by stress release during UV illumination, which can be proved by high-resolution transmission electron microscopy images and X-ray diffraction patterns. Furthermore, based on QDs' theoretical mass calculations, a photo-stable white light-emitting diode is fabricated by encapsulating with a thick-shell QD, and an exceptional color gamut of 130% relative to the National Television Systems Committee color space can be achieved. Also, its colorimetry and photometry are discussed in detail.

Excitonic pathway to photoinduced magnetism in colloidal nanocrystals with nonmagnetic dopants

Electronic doping of colloidal semiconductor nanostructures holds promise for future device concepts in optoelectronic and spin-based technologies. Ag⁺ is an emerging electronic dopant in III-V and II-VI nanostructures, introducing intragap electronic states optically coupled to the host conduction band. With its full 4d shell Ag⁺ is nonmagnetic, and the dopant-related luminescence is ascribed to decay of the conduction-band electron following transfer of the photoexcited hole to Ag⁺. This optical activation process and the associated modification of the electronic configuration of Ag⁺ remain unclear. Here, we trace a comprehensive picture of the excitonic process in Ag-doped CdSe nanocrystals and demonstrate that, in contrast to expectations, capture of the photohole leads to conversion of Ag⁺ to paramagnetic Ag²⁺. The process of exciton recombination is thus inextricably tied to photoinduced magnetism. Accordingly, we observe strong optically activated magnetism and diluted magnetic semiconductor behaviour, demonstrating that optically switchable magnetic nanomaterials can be obtained by exploiting excitonic processes involving nonmagnetic impurities.

Photodoping and Transient Spectroscopies of Copper-Doped CdSe/CdS Nanocrystals

Colloidal Cu⁺-doped CdSe/CdS core/shell semiconductor nanocrystals (NCs) are investigated in their as-prepared and degenerately n-doped forms using time-resolved photoluminescence and transient-absorption spectroscopies. Photoluminescence from Cu⁺:CdSe/CdS NCs is dominated by recombination of delocalized conduction-band (CB) electrons with copper-localized holes. In addition to prominent bleaching of the first excitonic absorption feature, transient-absorption measurements show bleaching of the sub-bandgap copper-to-CB charge-transfer (ML_CBCT) absorption band and also reveal a photoinduced midgap valence-band (VB)-to-copper charge-transfer (L_VBMCT) absorption band that extends into the near-infrared, as predicted by recent computations. The photoluminescence of these NCs is substantially diminished upon introduction of excess CB electrons via photodoping. Time-resolved photoluminescence measurements reveal that the ML_CBCT excited state is still formed upon photoexcitation of the n-doped Cu⁺:CdSe/CdS NCs, but its luminescence is quenched by a fast (picosecond) three-carrier trap-assisted Auger recombination process involving two CB electrons and one copper-bound hole.

Impurity Location-Dependent Relaxation Dynamics of Cu:CdS Quantum Dots

Various types of 2% Cu-incorporated CdS (Cu:CdS) quantum dots (QDs) with very similar sizes have been prepared via a water soluble colloidal method. The locations of Cu impurities in CdS host nanocrystals have been controlled by adopting three different synthetic ways of doping, exchange, and adsorption to understand the impurity location-dependent relaxation dynamics of charge carriers. The oxidation state of incorporated Cu impurities has been found to be +1 and the band-gap energy of Cu:CdS QDs decreases as Cu2S forms at the surfaces of CdS QDs. Broad and red-shifted emission with a large Stokes shift has been observed for Cu:CdS QDs as newly produced Cu-related defects become luminescent centers. The energetically favored hole trapping of thiol molecules, as well as the local environment, inhibits the radiative recombination processes of Cu:CdS QDs, thus resulting in low photoluminescence. Upon excitation, an electron is promoted to the conduction band, leaving a hole on the valence band. The hole is transferred to the Cu+ d-state, changing Cu+ into Cu2+, which then participates in radiative recombination with an electron. Electrons in the conduction band are ensnared into shallow-trap sites within 52 ns. The electrons can be further captured on the time scale of 260 ns into deep-trap sites, where electrons recombine with holes in 820 ns. Our in-depth analysis of carrier relaxation has shown that the possibilities of both nonradiative recombination and energy transfer to Cu impurities become high when Cu ions are located at the surface of CdS QDs.

Heterovalent Doping in Colloidal Semiconductor Nanocrystals: Cation-Exchange-Enabled New Accesses to Tuning Dopant Luminescence and Electronic Impurities

Heterovalent doping in colloidal semiconductor nanocrystals (CSNCs), with provisions of extra electrons (n-type doping) or extra holes (p-type doping), could enhance their performance of optical and electronical properties. In view of the challenges imposed by the intrinsic self-purification, self-quenching, and self-compensation effects of CSNCs, we outline the progress on heterovalent doping in CSNCs, with particular focus on the cation-exchange-enabled tuning of dopant luminescence and electronic impurities. Thus, the well-defined substitutional or interstitial heterovalent doping in a deep position of an isolated nanocrystal has been fulfilled. We also envision that new coordination ligand-initiated cation exchange would bring about more choices of heterovalent dopants. With the aid of high-resolution characterization methods, the accurate atom-specific dopant location and distribution could be confirmed clearly. Finally, new applications, some of the remaining unanswered questions, and future directions of this field are presented.

Spectro-electrochemical Probing of Intrinsic and Extrinsic Processes in Exciton Recombination in I-III-VI2 Nanocrystals

Ternary CuInS₂ nanocrystals (CIS NCs) are attracting attention as nontoxic alternatives to heavy metal-based chalcogenides for many technologically relevant applications. The photophysical processes underlying their emission mechanism are, however, still under debate. Here we address this problem by applying, for the first time, spectro-electrochemical methods to core-only CIS and core/shell CIS/ZnS NCs. The application of an electrochemical potential enables us to reversibly tune the NC Fermi energy and thereby control the occupancy of intragap defects involved in exciton decay. The results indicate that, in analogy to copper-doped II-VI NCs, emission occurs via radiative capture of a conduction-band electron by a hole localized on an intragap state likely associated with a Cu-related defect. We observe the increase in the emission efficiency under reductive electrochemical potential, which corresponds to raising the Fermi level, leading to progressive filling of intragap states with electrons. This indicates that the factor limiting the emission efficiency in these NCs is nonradiative electron trapping, while hole trapping is of lesser importance. This observation also suggests that the centers for radiative recombination are Cu²⁺ defects (preexisting and/or accumulated as a result of photoconversion of Cu¹⁺ ions) as these species contain a pre-existing hole without the need for capturing a valence-band hole generated by photoexcitation. Temperature-controlled photoluminescence experiments indicate that the intrinsic limit on the emission efficiency is imposed by multiphonon nonradiative recombination of a band-edge electron and a localized hole. This process affects both shelled and unshelled CIS NCs to a similar degree, and it can be suppressed by cooling samples to below 100 K. Finally, using experimentally measured decay rates, we formulate a model that describes the electrochemical modulation of the PL efficiency in terms of the availability of intragap electron traps as well as direct injection of electrons into the NC conduction band, which activates nonradiative Auger recombination, or electrochemical conversion of the Cu²⁺ states into the Cu¹⁺ species that are less emissive due to the need for their "activation" by the capture of photogenerated holes.

"Quantized" Doping of Individual Colloidal Nanocrystals Using Size-Focused Metal Quantum Clusters

The insertion of intentional impurities, commonly referred to as doping, into colloidal semiconductor quantum dots (QDs) is a powerful paradigm for tailoring their electronic, optical, and magnetic behaviors beyond what is obtained with size-control and heterostructuring motifs. Advancements in colloidal chemistry have led to nearly atomic precision of the doping level in both lightly and heavily doped QDs. The doping strategies currently available, however, operate at the ensemble level, resulting in a Poisson distribution of impurities across the QD population. To date, the synthesis of monodisperse ensembles of QDs individually doped with an identical number of impurity atoms is still an open challenge, and its achievement would enable the realization of advanced QD devices, such as optically/electrically controlled magnetic memories and intragap state transistors and solar cells, that rely on the precise tuning of the impurity states (i.e., number of unpaired spins, energy and width of impurity levels) within the QD host. The only approach reported to date relies on QD seeding with organometallic precursors that are intrinsically unstable and strongly affected by chemical or environmental degradation, which prevents the concept from reaching its full potential and makes the method unsuitable for aqueous synthesis routes. Here, we overcome these issues by demonstrating a doping strategy that bridges two traditionally orthogonal nanostructured material systems, namely, QDs and metal quantum clusters composed of a "magic number" of atoms held together by stable metal-to-metal bonds. Specifically, we use clusters composed of four copper atoms (Cu₄) capped with d-penicillamine to seed the growth of CdS QDs in water at room temperature. The elemental analysis, performed by electrospray ionization mass spectrometry, X-ray fluorescence, and inductively coupled plasma mass spectrometry, side by side with optical spectroscopy and transmission electron microscopy measurements, indicates that each Cu:CdS QD in the ensemble incorporates four Cu atoms originating from one Cu₄ cluster, which acts as a "quantized" source of dopant impurities.

Role of Nonradiative Defects and Environmental Oxygen on Exciton Recombination Processes in CsPbBr3 Perovskite Nanocrystals

Lead halide perovskite nanocrystals (NCs) are emerging as optically active materials for solution-processed optoelectronic devices. Despite the technological relevance of tracing rational guidelines for optimizing their performances and stability beyond their intrinsic resilience to structural imperfections, no in-depth study of the role of selective carrier trapping and environmental conditions on their exciton dynamics has been reported to date. Here we conduct spectro-electrochemical (SEC) experiments, side-by-side to oxygen sensing measurements on CsPbBr3 NCs for the first time. We show that the application of EC potentials controls the emission intensity by altering the occupancy of defect states without degrading the NCs. Reductive potentials lead to strong (60%) emission quenching by trapping of photogenerated holes, whereas the concomitant suppression of electron trapping is nearly inconsequential to the emission efficiency. Consistently, oxidizing conditions result in minor (5%) brightening due to suppressed hole trapping, confirming that electron traps play a minor role in nonradiative decay. This behavior is rationalized through a model that links the occupancy of trap sites with the position of the NC Fermi level controlled by the EC potential. Photoluminescence measurements in controlled atmosphere reveal strong quenching by collisional interactions with O2, which is in contrast to the photobrightening effect observed in films and single crystals. This indicates that O2 acts as a scavenger of photoexcited electrons without mediation by structural defects and, together with the asymmetrical SEC response, suggests that electron-rich defects are likely less abundant in nanostructured perovskites than in the bulk, leading to an emission response dominated by direct interaction with the environment.

Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

The field of nanocrystal quantum dots (QDs) is already more than 30 years old, and yet continuing interest in these structures is driven by both the fascinating physics emerging from strong quantum confinement of electronic excitations, as well as a large number of prospective applications that could benefit from the tunable properties and amenability toward solution-based processing of these materials. The focus of this review is on recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion. A specific underlying theme is innovative concepts for tuning the properties of QDs beyond what is possible via traditional size manipulation, particularly through heterostructuring. Examples of such advanced control of nanocrystal functionalities include the following: interface engineering for suppressing Auger recombination in the context of QD LEDs and lasers; Stokes-shift engineering for applications in large-area luminescent solar concentrators; and control of intraband relaxation for enhanced carrier multiplication in advanced QD photovoltaics. We examine the considerable recent progress on these multiple fronts of nanocrystal research, which has resulted in the first commercialized QD technologies. These successes explain the continuing appeal of this field to a broad community of scientists and engineers, which in turn ensures even more exciting results to come from future exploration of this fascinating class of materials.

Thick-Shell CuInS2/ZnS Quantum Dots with Suppressed "Blinking" and Narrow Single-Particle Emission Line Widths

Quantum dots (QDs) of ternary I-III-VI₂ compounds such as CuInS₂ and CuInSe₂ have been actively investigated as heavy-metal-free alternatives to cadmium- and lead-containing semiconductor nanomaterials. One serious limitation of these nanostructures, however, is a large photoluminescence (PL) line width (typically >300 meV), the origin of which is still not fully understood. It remains even unclear whether the observed broadening results from considerable sample heterogeneities (due, e.g., to size polydispersity) or is an unavoidable intrinsic property of individual QDs. Here, we answer this question by conducting single-particle measurements on a new type of CuInS₂ (CIS) QDs with an especially thick ZnS shell. These QDs show a greatly enhanced photostability compared to core-only or thin-shell samples and, importantly, exhibit a strongly suppressed PL blinking at the single-dot level. Spectrally resolved measurements reveal that the single-dot, room-temperature PL line width is much narrower (down to ∼60 meV) than that of the ensemble samples. To explain this distinction, we invoke a model wherein PL from CIS QDs arises from radiative recombination of a delocalized band-edge electron and a localized hole residing on a Cu-related defect and also account for the effects of electron-hole Coulomb coupling. We show that random positioning of the emitting center in the QD can lead to more than 300 meV variation in the PL energy, which represents at least one of the reasons for large PL broadening of the ensemble samples. These results suggest that in addition to narrowing size dispersion, future efforts on tightening the emission spectra of these QDs might also attempt decreasing the "positional" heterogeneity of the emitting centers.

Single-Particle Ratiometric Pressure Sensing Based on "Double-Sensor" Colloidal Nanocrystals

Ratiometric pressure sensitive paints (r-PSPs) are all-optical probes for monitoring oxygen flows in the vicinity of complex or miniaturized surfaces. They typically consist of a porous binder embedding mixtures of a reference and a sensor chromophore exhibiting oxygen-insensitive and oxygen-responsive luminescence, respectively. Here, we demonstrate the first example of an r-PSP based on a single two-color emitter that removes limitations of r-PSPs based on chromophore mixtures such as different temperature dependencies of the two chromophores, cross-readout between the reference and sensor signals and phase segregation. In our approach, we utilize a novel "double-sensor" r-PSP that features two spectrally separated emission bands with opposite responses to the O₂ pressure, which boosts the sensitivity with respect to traditional reference-sensor pairs. Specifically, we use two-color-emitting dot-in-bulk CdSe/CdS core/shell nanocrystals, exhibiting red and green emission bands from their core and shell states, whose intensities are respectively enhanced and quenched in response to the increased oxygen partial pressure that effectively tunes the position of the nanocrystal's Fermi energy. This leads to a strong and reversible ratiometric response at the single particle level and an over 100% enhancement in the pressure sensitivity. Our proof-of-concept r-PSPs further exhibit suppressed cross-readout thanks to zero spectral overlap between the core and shell luminescence bands and a temperature-independent ratiometric response between 0 and 70 °C.

Influence of dopants Cu, Ga, In, Hg on the electronic structure of CdnSn (n = 6, 15) clusters – a DFT study

The influence of dopants on the electronic structure and the optical properties of doped Cdn_−yXySn (n = 6, 15; y = 1, 2, 4) clusters, studied using DFT and TDDFT methods.

Synthesis and magnetooptic characterization of Cu-doped ZnO/MgO and ZnO/oleic acid core/shell nanoparticles

The effect of Cu ion doping on the photoluminescence (PL) and magnetic behavior of ZnO/MgO and ZnO/oleic acid core/shell nanoparticles is investigated.

Construction of Ag-doped Zn–In–S quantum dots toward white LEDs and 3D luminescent patterning

The synthesis of green photoluminescent Ag-doped Zn–In–S quantum dots and their applications in patterning and white LEDs are reported.

Photoluminescence properties of transition metal-doped Zn–In–S/ZnS core/shell quantum dots in solid films

The photoluminescence (PL) properties of transition metal ion (Mn²⁺ or Cu⁺) doped Zn–In–S/ZnS core/shell quantum dots (QDs) in solution and solid films were investigated by using steady-state and time-resolved PL spectra.