Aspect ratio dependence of auger recombination and carrier multiplication in PbSe nanorods

Multiphoton-pumped UV-Vis transient absorption spectroscopy of 2D materials: basic concepts and recent applications

2D materials are considered a key element in the development of next-generation electronics (nanoelectronics) due to their extreme thickness in the nanometer range and unique physical properties. The ultrafast dynamics of photoexcited carriers in such materials are strongly influenced by their interfaces, since the thickness of 2D materials is much smaller than the typical depth of light penetration into their bulk counterparts and the mean free path of photoexcited carriers. The resulting collisions of photoexcited carriers with interfacial potential barriers of 2D materials in the presence of a strong laser field significantly alter the overall dynamics of photoexcitation, allowing laser light to be directly absorbed by carriers in the conduction/valence band through the inverse bremsstrahlung mechanism. The corresponding ultrafast carrier dynamics can be monitored using multiphoton-pumped UV-Vis transient absorption spectroscopy. In this review, we discuss the basic concepts and recent applications of this spectroscopy for a variety of 2D materials, including transition-metal dichalcogenide monolayers, topological insulators, and other 2D semiconductor structures.

Charge Transfer from Quantum-Confined 0D, 1D, and 2D Nanocrystals

The properties of colloidal quantum-confined semiconductor nanocrystals (NCs), including zero-dimensional (0D) quantum dots, 1D nanorods, 2D nanoplatelets, and their heterostructures, can be tuned through their size, dimensionality, and material composition. In their photovoltaic and photocatalytic applications, a key step is to generate spatially separated and long-lived electrons and holes by interfacial charge transfer. These charge transfer properties have been extensively studied recently, which is the subject of this Review. The Review starts with a summary of the electronic structure and optical properties of 0D-2D nanocrystals, followed by the advances in wave function engineering, a novel way to control the spatial distribution of electrons and holes, through their size, dimension, and composition. It discusses the dependence of NC charge transfer on various parameters and the development of the Auger-assisted charge transfer model. Recent advances in understanding multiple exciton generation, decay, and dissociation are also discussed, with an emphasis on multiple carrier transfer. Finally, the applications of nanocrystal-based systems for photocatalysis are reviewed, focusing on the photodriven charge separation and recombination processes that dictate the function and performance of these materials. The Review ends with a summary and outlook of key remaining challenges and promising future directions in the field.

New Theoretical Model to Describe Carrier Multiplication in Semiconductors: Explanation of Disparate Efficiency in MoTe2 versus PbS and PbSe

We present a theoretical model to compute the efficiency of the generation of two or more electron-hole pairs in a semiconductor by the absorption of one photon via the process of carrier multiplication (CM). The photogeneration quantum yield of electron-hole pairs is calculated from the number of possible CM decay pathways of the electron and the hole. We apply our model to investigate the underlying cause of the high efficiency of CM in bulk 2H-MoTe2, as compared to bulk PbS and PbSe. Electronic band structures were calculated with density functional theory, from which the number of possible CM decay pathways was calculated for all initial electron and hole states that can be produced at a given photon energy. The variation of the number of CM pathways with photon energy reflects the dependence of experimental CM quantum yields on the photon energy and material composition. We quantitatively reproduce experimental CM quantum yields for MoTe2, PbS, and PbSe from the calculated number of CM pathways and one adjustable fit parameter. This parameter is related to the ratio of Coulomb coupling matrix elements and the cooling rate of the electrons and holes. Large variations of this fit parameter result in small changes in the modeled quantum yield for MoTe2, which confirms that its high CM efficiency can be mainly attributed to its extraordinary large number of CM pathways. The methodology of this work can be applied to analyze or predict the CM efficiency of other materials.

Long-Lived and Bright Biexcitons in Quantum Dots with Parabolic Band Potentials

Multiple exciton physics in semiconductor nanocrystals play an important role in optoelectronic devices. This work investigates radially alloyed CdZnSe/CdS nanocrystals with suppressed Auger recombination due to the spatial separation of carriers, which also underpins their performance in optical gain and scintillation experiments. Due to suppressed Auger recombination, the biexciton lifetime is greater than 10 ns, much longer than most nanocrystals. The samples show optical gain, amplified spontaneous emission, and lasing at thresholds <2 excitons per particle. They also show broad gain bandwidth (>500 meV) encompassing 4 amplified spontaneous emission bands. Similarly enabled by slowed multiple exciton relaxation, the samples display strong performance in scintillating films under X-ray illumination. The CdZnSe/CdS samples have fast radioluminescence rise (<80 ps) and decay times (<5 ns), light yields up to 6700 photons·MeV-1, and the demonstrated capacity for incorporation into large area films for scintillation imaging.

Boosting internal quantum efficiency via ultrafast triplet transfer to 2H-MoTe2 film

Organic systems often allow to create two triplet spin states (triplet excitons) by converting an initially excited singlet spin state (a singlet exciton). An ideally designed organic/inorganic heterostructure could reach the photovoltaic energy harvest over the Shockley-Queisser (S-Q) limit because of the efficient conversion of triplet excitons into charge carriers. Here, we demonstrate the molybdenum ditelluride (MoTe₂)/pentacene heterostructure to boost the carrier density via efficient triplet transfer from pentacene to MoTe₂ using ultrafast transient absorption spectroscopy. We observe carrier multiplication by nearly four times by doubling carriers in MoTe₂ via the inverse Auger process and subsequently doubling carriers via triplet extraction from pentacene. We also verify efficient energy conversion by doubling the photocurrent in the MoTe₂/pentacene film. This puts a step forward to enhancing photovoltaic conversion efficiency beyond the S-Q limit in the organic/inorganic heterostructures.

Efficient Multiple Exciton Generation in Monolayer MoS2

Utilization of the excess energy of photoexcitation that is otherwise lost as thermal effects can improve the efficiency of next-generation light-harvesting devices. Multiple exciton generation (MEG) in semiconducting materials yields two or more excitons by absorbing a single high-energy photon, which can break the Shockley-Queisser limit for the conversion efficiency of photovoltaic devices. Recently, monolayer transition metal dichalcogenides (TMDs) have emerged as promising light-harvesting materials because of their high absorption coefficient. Here, we report efficient MEGs with low threshold energy and high (86%) efficiency in a van der Waals (vdW) layered material, MoS₂. Through different experimental approaches, we demonstrate the signature of exciton multiplication and discuss the possible origin of decisive MEG in monolayer MoS₂. Our results reveal that vdW-layered materials could be a potential candidate for developing mechanically flexible and highly efficient next-generation solar cells and photodetectors.

Electronic Structure and Excited State Dynamics of Cadmium Chalcogenide Nanorods

The cylindrical quasi-one-dimensional shape of colloidal semiconductor nanorods (NRs) gives them unique electronic structure and optical properties. In addition to the band gap tunability common to nanocrystals, NRs have polarized light absorption and emission and high molar absorptivities. NR-shaped heterostructures feature control of electron and hole locations as well as light emission energy and efficiency. We comprehensively review the electronic structure and optical properties of Cd-chalcogenide NRs and NR heterostructures (e.g., CdSe/CdS dot-in-rods, CdSe/ZnS rod-in-rods), which have been widely investigated over the last two decades due in part to promising optoelectronic applications. We start by describing methods for synthesizing these colloidal NRs. We then detail the electronic structure of single-component and heterostructure NRs and follow with a discussion of light absorption and emission in these materials. Next, we describe the excited state dynamics of these NRs, including carrier cooling, carrier and exciton migration, radiative and nonradiative recombination, multiexciton generation and dynamics, and processes that involve trapped carriers. Finally, we describe charge transfer from photoexcited NRs and connect the dynamics of these processes with light-driven chemistry. We end with an outlook that highlights some of the outstanding questions about the excited state properties of Cd-chalcogenide NRs.

Carrier Multiplication in Transition Metal Dichalcogenides Beyond Threshold Limit

Carrier multiplication (CM), multiexciton generation by absorbing a single photon, enables disruptive improvements in photovoltaic conversion efficiency. However, energy conservation constrains the threshold energy to at least twice bandgap (2 E g $ E_\text{g}$ ). Here, a below threshold limit CM in monolayer transition metal dichalcogenides (TMDCs) is reported. Surprisingly, CM is observed with excitation energy of only 1.75 E g $E_\text{g}$ due to lattice vibrations. Electron-phonon coupling (EPC) results in significant changes in electronic structures, which favors CM. Indeed, the strongest EPC in monolayer MoS₂ leads to the most efficient CM among the studied TMDCs. For practical applications, chalcogen vacancies can further lower the threshold by introducing defect states within bandgap. In particular, for monolayer WS₂ , CM occurs with excitation energy as low as 1.51 E g $E_\text{g}$ . The results identify TMDCs as attractive candidate materials for efficient optoelectronic devices with the advantages of high photoconductivity and efficient CM.

The Rise and Future of Discrete Organic-Inorganic Hybrid Nanomaterials

Hybrid nanomaterials (HNs), the combination of organic semiconductor ligands attached to nanocrystal semiconductor quantum dots, have applications that span a range of practical fields, including biology, chemistry, medical imaging, and optoelectronics. Specifically, HNs operate as discrete, tunable systems that can perform prompt fluorescence, energy transfer, singlet fission, upconversion, and/or thermally activated delayed fluorescence. Interest in HNs has naturally grown over the years due to their tunability and broad spectrum of applications. This Review presents a brief introduction to the components of HNs, before expanding on the characterization and applications of HNs. Finally, the future of HN applications is discussed.

Multiple exciton generation in isolated and interacting silicon nanocrystals

An important challenge in the field of renewable energy is the development of novel nanostructured solar cell devices which implement low-dimensional materials to overcome the limits of traditional photovoltaic systems. For optimal energy conversion in photovoltaic devices, one important requirement is that the full energy of the solar spectrum is effectively used. In this context, the possibility of exploiting features and functionalities induced by the reduced dimensionality of the nanocrystalline phase, in particular by the quantum confinement of the electronic density, can lead to a better use of the carrier excess energy and thus to an increment of the thermodynamic conversion efficiency of the system. Carrier multiplication, i.e. the generation of multiple electron-hole pairs after absorption of one single high-energy photon (with energy at least twice the energy gap of the system), can be exploited to maximize cell performance, promoting a net reduction of loss mechanisms. Over the past fifteen years, carrier multiplication has been recorded in a large variety of semiconductor nanocrystals and other nanostructures. Owing to the role of silicon in solar cell applications, the mission of this review is to summarize the progress in this fascinating research field considering carrier multiplication in Si-based low-dimensional systems, in particular Si nanocrystals, both from the experimental and theoretical point of view, with special attention given to the results obtained by ab initio calculations.

Using Interaction of Nano Dipoles to Control the Growth of Nanorods

Charged facets of a nanocrystal can form an intrinsic nanometer-size electric dipole. When the spacing between these nano dipoles is adjusted, the dipolar interaction energy is tuned from a fraction to a multiple of the thermal energy. Consequently, the one-dimensional oriented attachment can be switched on or off, as is the growth of nanorods. This kinetically controlled growth is achieved at relatively low reaction temperatures while the thermodynamically controlled growth dominates at higher temperatures. The synthesized PbSe nanorods are branchless, exhibiting a single-exponential photoluminescence decay trace with an e-folding lifetime of 1.3 μs and a photoluminescence quantum yield of 35%.

Highly Efficient Multiple Exciton Generation and Harvesting in Few-Layer Black Phosphorus and Heterostructure

Multiple exciton generation (MEG) in semiconductors that yields two or more excitons by absorbing one high-energy photon has been proposed to break the Shockley-Queisser limit and boost photon-to-electron conversion efficiency. However, MEG performance in conventional bulk semiconductors or later colloidal nanocrystals is far from satisfactory. Here, we report efficient MEG in few-layer black phosphorus (BP), a direct narrow bandgap two-dimensional (2D) semiconductor with layer-tunable properties. MEG performance improves with decreasing layer number and reaches 2.09E_g threshold and 93% efficiency for two-layer BP, approaching energy conservation limit. The enhanced MEG can be attributed to strong Coulomb interaction and high density of states in 2D materials. Furthermore, MEG of BP shows negligible degradation in vertical heterostructure and multielectron can be extracted by interfacial transfer with near unity yield. These results suggest 2D semiconductors as an ideal system for next generation highly efficient light emission and charge transfer devices.

Area and thickness dependence of Auger recombination in nanoplatelets

The ability to control both the thickness and the lateral dimensions of colloidal nanoplatelets offers a test-bed for area and thickness dependent properties in 2D materials. An important example is Auger recombination, which is typically the dominant process by which multiexcitons decay in nanoplatelets. Herein, we uncover fundamental properties of biexciton decay in nanoplatelets by comparing the Auger recombination lifetimes based on interacting and noninteracting formalisms with measurements based on transient absorption spectroscopy. Specifically, we report that electron-hole correlations in the initial biexcitonic state must be included in order to obtain Auger recombination lifetimes in agreement with experimental measurements and that Auger recombination lifetimes depend nearly linearly on the lateral area and somewhat more strongly on the thickness of the nanoplatelet. We also connect these scalings to those of the area and thickness dependencies of single exciton radiative recombination lifetimes, exciton coherence areas, and exciton Bohr radii in these quasi-2D materials.

Auger Recombination Lifetime Scaling for Type I and Quasi-Type II Core/Shell Quantum Dots

Having already achieved near-unity quantum yields, with promising properties for light-emitting diode, lasing, and charge separation applications, colloidal core/shell quantum dots have great technological potential. The shell thickness and band alignment of the shell and core materials are known to influence the efficiency of these devices. In many such applications, improving the efficiency requires a deep understanding of multiexcitonic states. Herein, we elucidate the shell thickness and band alignment dependencies of the biexciton Auger recombination lifetime for quasi-type II CdSe/CdS and type I CdSe/ZnS core/shell quantum dots. We find that the biexciton Auger recombination lifetime increases with the total nanocrystal volume for quasi-type II CdSe/CdS core/shell quantum dots and is independent of the shell thickness for type I CdSe/ZnS core/shell quantum dots. To perform these calculations and compute Auger recombination lifetimes, we developed a low-scaling approach based on the stochastic resolution of identity. The numerical approach provided a framework for studying the scaling of the biexciton Auger recombination lifetimes in terms of the shell thickness dependencies of the exciton radii, Coulomb couplings, and density of final states in quasi-type II CdSe/CdS and type I CdSe/ZnS core/shell quantum dots.

Phonon-Driven Energy Relaxation in PbS/CdS and PbSe/CdSe Core/Shell Quantum Dots

We study the impact of the chemical composition on phonon-mediated exciton relaxation in the core/shell quantum dots (QDs), with 1 nm core made of PbX and the monolayer shell made of CdX, where X = S and Se. For this, time-domain nonadiabatic molecular dynamics (NAMD) based on density functional theory (DFT) and surface hopping techniques are applied. Simulations reveal twice faster energy relaxation in PbS/CdS than PbSe/CdSe because of dominant couplings to higher-energy optical phonons in structures with sulfur anions. For both QDs, the long-living intermediate states associated with the core-shell interface govern the dynamics. Therefore, a simple exponential model is not appropriate, and the four-state irreversible kinetic model is suggested instead, predicting 0.9 and 0.5 ps relaxation rates in PbSe/CdSe and PbS/CdS QDs, respectively. Thus, 2 nm PdSe/CdSe QDs with a single monolayer shell exhibit the phonon-mediated relaxation time sufficient for carrier multiplications to outpace energy dissipation and benefit the solar conversion efficiency.

Nanoshell quantum dots: Quantum confinement beyond the exciton Bohr radius

Nanoshell quantum dots (QDs) represent a novel class of colloidal semiconductor nanocrystals (NCs), which supports tunable optoelectronic properties over the extended range of particle sizes. Traditionally, the ability to control the bandgap of colloidal semiconductor NCs is limited to small-size nanostructures, where photoinduced charges are confined by Coulomb interactions. A notorious drawback of such a restricted size range concerns the fact that assemblies of smaller nanoparticles tend to exhibit a greater density of interfacial and surface defects. This presents a potential problem for device applications of semiconductor NCs where the charge transport across nanoparticle films is important, as in the case of solar cells, field-effect transistors, and photoelectrochemical devices. The morphology of nanoshell QDs addresses this issue by enabling the quantum-confinement in the shell layer, where two-dimensional excitons can exist, regardless of the total particle size. Such a geometry exhibits one of the lowest surface-to-volume ratios among existing QD architectures and, therefore, could potentially lead to improved charge-transport and multi-exciton characteristics. The expected benefits of the nanoshell architecture were recently demonstrated by a number of reports on the CdS_bulk/CdSe nanoshell model system, showing an improved photoconductivity of solids and increased lifetime of multi-exciton populations. Along these lines, this perspective will summarize the recent work on CdS_bulk/CdSe nanoshell colloids and discuss the possibility of employing other nanoshell semiconductor combinations in light-harvesting and lasing applications.

Exciton, Biexciton, and Hot Exciton Dynamics in CsPbBr3 Colloidal Nanoplatelets

Lead halide perovskites have emerged as promising materials for light-emitting devices. Here, we report the preparation of colloidal CsPbBr₃ nanoplatelets (3 × 4 × 23 nm³) experiencing a strong quasi-one-dimensional quantum confinement. Ultrafast transient absorption and broadband fluorescence up-conversion spectroscopies were employed to scrutinize the carrier and quasiparticle dynamics and to obtain a full description of the spectroscopic properties of the material. An exciton binding energy of 350 meV, an absorption cross section at 3.2 eV of 5.0 ± 0.3 × 10^-15 cm^-2, an efficient biexciton Auger recombination lifetime of 9 ± 1 ps, and a biexciton binding energy of 74 ± 4 meV were determined. Moreover, a short-lived emission from hot excitons was observed, which is related to the formation of band-edge excitons. The time constant of both processes is 300 ± 50 fs. These results show that CsPbBr₃ nanoplatelets are indeed quite promising for light-emitting technological applications.

Carrier multiplication in van der Waals layered transition metal dichalcogenides

Carrier multiplication (CM) is a process in which high-energy free carriers relax by generation of additional electron-hole pairs rather than by heat dissipation. CM is promising disruptive improvements in photovoltaic energy conversion and light detection technologies. Current state-of-the-art nanomaterials including quantum dots and carbon nanotubes have demonstrated CM, but are not satisfactory owing to high-energy-loss and inherent difficulties with carrier extraction. Here, we report CM in van der Waals (vdW) MoTe₂ and WSe₂ films, and find characteristics, commencing close to the energy conservation limit and reaching up to 99% CM conversion efficiency with the standard model. This is demonstrated by ultrafast optical spectroscopy with independent approaches, photo-induced absorption, photo-induced bleach, and carrier population dynamics. Combined with a high lateral conductivity and an optimal bandgap below 1 eV, these superior CM characteristics identify vdW materials as an attractive candidate material for highly efficient and mechanically flexible solar cells in the future.

During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe₂ and WSe₂ films with up to 99% conversation efficiency.

Exciton Spatial Coherence and Optical Gain in Colloidal Two-Dimensional Cadmium Chalcogenide Nanoplatelets

Two-dimensional (2D) cadmium chalcogenide (CdX, X = Se, S, Te) colloidal nanoplatelets (NPLs) make up an emerging class of quantum well materials that exhibit many unique properties including uniform quantum confinement, narrow thickness distribution, large exciton binding energy, giant oscillator strength, long Auger lifetime, and high photoluminescence quantum yield. These properties have led to their great performances in optoelectrical applications such as lasing materials with a low threshold and large gain coefficient. Many of these properties are determined by the structure and dynamics of band-edge excitons in these 2D materials. Motivated by fundamental understanding of both 2D nanomaterials and their applications, the properties of 2D excitons have received intense recent interest. This Account provides an overview of three key properties of 2D excitons: how big is the 2D exciton (i.e., exciton center-of-mass coherent area); how the exciton moves in 2D NPLs (i.e., exciton in-plane transport mechanism); how multiple excitons interact with each other (i.e., biexciton Auger recombination); and their effects on the optical gain mechanism and threshold of colloidal NPLs. After a brief introduction in Section 1, the current understandings of 2D electronic structures of cadmium chalcogenide NPLs, and type-I CdSe/CdS and type-II CdSe/CdTe core/crown NPL heterostructures are summarized in Section 2. Section 3 discusses the direct measurement of exciton center-of-mass coherent area in 2D CdSe NPLs, its dependence on NPL parameters (thickness, lateral area, dielectric environment, and temperature), and the resulting giant oscillator strength transition (GOST) effect in 2D NPLs. 2D exciton diffusive in-plane transport in CdX NPLs and the comparison of exciton transport mechanisms in 2D NPLs and 1D nanorods are reviewed in Section 4. How Auger recombination lifetime depends on nanocrystal dimensions in NPLs, quantum dots, and nanorods is discussed in Section 5. The lateral area and thickness dependent Auger recombination rates of NPLs are shown to be well described by a model that accounts for the different dependence of the Auger recombination rates on the quantum confined and nonconfined dimensions. It is shown that Auger recombination rates do not follow the "universal volume scaling" law in 1D and 2D nanocrystals. Section 6 describes optical gain mechanisms in CdSe NPLs and the dependence of optical gain threshold on NPL lateral size, optical density, and temperature. The differences of optical gain properties in 0D-2D and the bulk materials are also discussed, highlighting the unique gain properties of 2D NPLs. At last, the Account ends with a summary and perspective of key remaining challenges in this field in Section 7.

Size- and Morphology-Dependent Auger Recombination in CsPbBr3 Perovskite Two-Dimensional Nanoplatelets and One-Dimensional Nanorods

CsPbX₃ (X = Cl, Br, I) perovskite nanocrystals (NCs), including zero-dimensional (0D) quantum dots (QDs), one-dimensional (1D) nanorods (NRs), and two-dimensional (2D) nanoplatelets (NPLs), have shown promising performances in light-emitting diode (LED) and lasing applications. However, Auger recombination, one of the key processes that limit their performance, remains poorly understood in CsPbX₃ 2D NPLs and 1D NRs. We show that the biexciton Auger lifetimes of CsPbBr₃ NPLs (NRs) scale linearly with the NPL lateral area (NR length) and deviates from the "universal volume scale law" that has been observed for QDs. These results are consistent with a model in which the Auger recombination rate for 1D NRs and 2D NPLs is a product of binary collision frequency in the nonquantum confined dimension and Auger probability per collision. Comparisons of Auger recombination in CsPbBr₃ NCs of different dimensionalities and similar band gaps suggest that Auger probability increases in NCs with a higher number of confined dimensions. Compared to CdSe and PbSe NCs with the same dimensionalities and similar sizes, Auger recombination rates in 0D-2D CsPbBr₃ NCs are over 10-fold faster. Fast Auger recombination in CsPbBr₃ NCs shows their potentials for Auger-assisted up-conversion and single photon source, while suppressing Auger recombination may further enhance their performances in LED and lasing applications.

Controlling dissolution of PbTe nanoparticles in organic solvents during liquid cell transmission electron microscopy

We present direct visualization of the dynamics of oleic-acid-capped PbTe nanoparticles suspended in different organic solvents using liquid cell transmission electron microscopy. Liquid cell transmission electron microscopy is a powerful tool to directly observe the behavior of a variety of nanoparticles in liquids, but requires careful consideration and quantification of how the electron beam affects the systems being investigated. We find that etching and dissolution of PbTe nanoparticles occurs with a strong dependence on electron dose rate ranging from no perceivable effect on the nanoparticles with lower dose rates (50 e- Å-2 s-1) to complete dissolution within seconds or minutes at higher dose rates (100 and 200 e- Å-2 s-1). We propose that oxidative etching, resulting from the radiolysis of small amounts of water, causes the PbTe nanoparticles to dissolve after exposure to a threshold electron dose rate of 50 e- Å-2 s-1.

Efficient Type-II Heterojunction Nanorod Sensitized Solar Cells Realized by Controlled Synthesis of Core/Patchy-Shell Structure and CdS Cosensitization

Here, we report the successful application of core/patchy-shell CdSe/CdSe _xTe_{1- x} type-II heterojunction nanorods (HNRs) to realize efficient sensitized solar cells. The core/patchy-shell structure designed to have a large type-II heterointerface without completely shielding the CdSe core significantly improves photovoltaic performance compared to other HNRs with minimal or full-coverage shells. In addition, cosensitization with CdS grown by successive ionic layer adsorption and reaction further improves the power conversion efficiency. One-diode model analysis reveals that the HNRs having exposed CdSe cores and suitably grown CdS result in significant reduction of series resistance. Investigation of the intercorrelation between diode quality parameters, diode saturation current density ( J₀) and recombination order (β = (ideality factor)^-1) reveals that HNRs with open CdSe cores exhibit reduced recombination. These results confirm that the superior performance of core/patchy-shell HNRs results from their fine-tuned structure: photocurrent is increased by the large type-II heterointerface and recombination is effectively suppressed due to the open CdSe core enabling facile electron extraction. An optimized power conversion efficiency of 5.47% (5.89% with modified electrode configuration) is reported, which is unmatched among photovoltaics utilizing anisotropic colloidal heterostructures as light-harvesting materials.

Photosensitization of Single-Crystal Oxide Substrates with Quantum Confined Semiconductors

Dye-sensitized solar cells have been studied for many years as a potential inexpensive and scalable alternative to silicon solar cells. They have recently expanded their list of photosensitizers to include quantum dots. In recent years, there has been substantial progress in the field of quantum dot solar cells, with certified efficiencies now reaching 13.4%. Fundamental studies on nanomaterial/semiconductor electrode coupling have led to a deeper understanding of photoinduced electron-transfer processes that are important for both of these devices. This Feature Article will highlight the use of a model system, nanomaterials sensitizing single-crystal oxide substrates, that is useful for investigating how changes in nanomaterial shape, dimensionality, size, and local environment affect the photoinduced charge separation efficiency.

Model To Determine a Distinct Rate Constant for Carrier Multiplication from Experiments

Carrier multiplication (CM) is the process in which multiple electron-hole pairs are created upon absorption of a single photon in a semiconductor. CM by an initially hot charge carrier occurs in competition with cooling by phonon emission, with the respective rates determining the CM efficiency. Up until now, CM rates have only been calculated theoretically. We show for the first time how to extract a distinct CM rate constant from experimental data of the relaxation time of hot charge carriers and the yield of CM. We illustrate this method for PbSe quantum dots. Additionally, we provide a simplified method using an estimated energy loss rate to estimate the CM rate constant just above the onset of CM, when detailed experimental data of the relaxation time is missing.

Colloidal semiconductor nanocrystals in energy transfer reactions

Excitonic energy transfer is a versatile mechanism by which colloidal semiconductor nanocrystals can interact with a variety of nanoscale species. This feature article will discuss the latest research on the key scenarios under which semiconductor nanocrystals can engage in energy transfer with other nanoparticles, organic fluorophores, and plasmonic nanostructures, highlighting potential technological benefits to be gained from such processes.

Electron-Hole Correlations Govern Auger Recombination in Nanostructures

The fast nonradiative decay of multiexcitonic states via Auger recombination is a fundamental process affecting a variety of applications based on semiconductor nanostructures. From a theoretical perspective, the description of Auger recombination in confined semiconductor nanostructures is a challenging task due to the large number of valence electrons and exponentially growing number of excited excitonic and biexcitonic states that are coupled by the Coulomb interaction. These challenges have restricted the treatment of Auger recombination to simple, noninteracting electron-hole models. Herein we present a novel approach for calculating Auger recombination lifetimes in confined nanostructures having thousands to tens of thousands of electrons, explicitly including electron-hole interactions. We demonstrate that the inclusion of electron-hole correlations are imperative to capture the correct scaling of the Auger recombination lifetime with the size and shape of the nanostructure. In addition, correlation effects are required to obtain quantitatively accurate lifetimes even for systems smaller than the exciton Bohr radius. Neglecting such correlations can result in lifetimes that are two orders of magnitude too long. We establish the utility of the new approach for CdSe quantum dots of varying sizes and for CdSe nanorods of varying diameters and lengths. Our new approach is the first theoretical method to postdict the experimentally known "universal volume scaling law" for quantum dots and makes novel predictions for the scaling of the Auger recombination lifetimes in nanorods.

Enhanced Multiple Exciton Generation in PbS|CdS Janus-like Heterostructured Nanocrystals

Generating multiple excitons by a single high-energy photon is a promising third-generation solar energy conversion strategy. We demonstrate that multiple exciton generation (MEG) in PbS|CdS Janus-like heteronanostructures is enhanced over that of single-component and core/shell nanocrystal architectures, with an onset close to two times the PbS band gap. We attribute the enhanced MEG to the asymmetric nature of the heteronanostructure that results in an increase in the effective Coulomb interaction that drives MEG and a reduction of the competing hot exciton cooling rate. Slowed cooling occurs through effective trapping of hot-holes by a manifold of valence band interfacial states having both PbS and CdS character, as evidenced by photoluminescence studies and ab initio calculations. Using transient photocurrent spectroscopy, we find that the MEG characteristics of the individual nanostructures are maintained in conductive arrays and demonstrate that these quasi-spherical PbS|CdS nanocrystals can be incorporated as the main absorber layer in functional solid-state solar cell architectures. Finally, based upon our analysis, we provide design rules for the next generation of engineered nanocrystals to further improve the MEG characteristics.

Evidence of Band-Edge Hole Levels Inversion in Spherical CuInS2 Quantum Dots

CuInS₂ (CIS) quantum dots (QDs) have emerged as one of the most promising candidates for application in a number of new technologies, mostly due to their heavy-metal-free composition and their unique optical properties. Among those, the large Stokes shift and the long-lived excited state are the most striking ones. Although these properties are important, the physical mechanism that originates them is still under debate. Here, we use two-photon absorption spectroscopy and ultrafast dynamics studies to investigate the physical origin of those phenomena. From the two-photon absorption spectroscopy, we observe yet another unique property of CIS QDs, a two-photon absorption transition below the one-photon absorption band edge, which has never been observed before for any other semiconductor nanostructure. This originates from the inversion of the 1S and 1P hole level order at the top of the valence band and results in a blue-shift of the experimentally measured one photon absorption edge by nearly 100 to 200 meV. However, this shift is not large enough to account for the Stokes shift observed, 200-500 meV. Consequently, despite the existence of the below band gap optical transition, photoluminescence in CIS QDs must originate from trap sites. These conclusions are reinforced by the multiexciton dynamics studies. From those, we demonstrate that biexciton Auger recombination behaves similarly to negative trion dynamics on these nanomaterials, which suggests that the trap state is an electron donating site.

Asymmetric Optical Transitions Determine the Onset of Carrier Multiplication in Lead Chalcogenide Quantum Confined and Bulk Crystals

Carrier multiplication is a process in which one absorbed photon excites two or more electrons. This is of great promise to increase the efficiency of photovoltaic devices. Until now, the factors that determine the onset energy of carrier multiplication have not been convincingly explained. We show experimentally that the onset of carrier multiplication in lead chalcogenide quantum confined and bulk crystals is due to asymmetric optical transitions. In such transitions most of the photon energy in excess of the band gap is given to either the hole or the electron. The results are confirmed and explained by theoretical tight-binding calculations of the competition between impact ionization and carrier cooling. These results are a large step forward in understanding carrier multiplication and allow for a screening of materials with an onset of carrier multiplication close to twice the band gap energy. Such materials are of great interest for development of highly efficient photovoltaic devices.

The Effect of Dielectric Environment on Doping Efficiency in Colloidal PbSe Nanostructures

Doping, as a central strategy to control free carrier type and concentration in semiconductor materials, suffers from low efficiency at the nanoscale, especially in systems having high permittivity (ϵ) and large Bohr radii, such as lead chalcogenide nanocrystals (NCs) and nanowires (NWs). Here, we study dielectric confinement effects on the doping efficiency of lead chalcogenides nanostructures by integrating PbSe NWs in the platform of field effect transistors (FETs). Elemental Pb or In or elemental Se is deposited by thermal evaporation to remotely n- or p-dope the NWs. Polymeric and oxide materials of varying ϵ are subsequently deposited to control the dielectric environment surrounding the NWs. Analyzing the device characteristics, we extract the change of carrier concentration introduced by tailoring the dielectric environment. The calculated doping efficiency for n-type (Pb/In) and p-type (Se) dopants increases as the ϵ of the surrounding medium increases. Using a high-ϵ material, such as HfO₂ for encapsulation, the doping efficiency can be enhanced by >10-fold. A theoretical model is built to describe the doping efficiency in PbSe NWs embedded in different dielectric environments, which agrees with our experimental data for both NW array and single NW devices. As dielectric confinement affects all low-dimensional materials, engineering the dielectric environment is a promising general approach to enhance doping concentrations, without introducing excess impurities that may scatter carriers, and is suitable for various device applications.

Efficient Steplike Carrier Multiplication in Percolative Networks of Epitaxially Connected PbSe Nanocrystals

Carrier multiplication (CM) is a process in which a single photon excites two or more electrons. CM is of interest to enhance the efficiency of a solar cell. Until now, CM in thin films and solar cells of semiconductor nanocrystals (NCs) has been found at photon energies well above the minimum required energy of twice the band gap. The high threshold of CM strongly limits the benefits for solar cell applications. We show that CM is more efficient in a percolative network of directly connected PbSe NCs. The CM threshold is at twice the band gap and increases in a steplike fashion with photon energy. A lower CM efficiency is found for a solid of weaker coupled NCs. This demonstrates that the coupling between NCs strongly affects the CM efficiency. According to device simulations, the measured CM efficiency would significantly enhance the power conversion efficiency of a solar cell.

Effect of Aspect Ratio on Multiparticle Auger Recombination in Single-Walled Carbon Nanotubes: Time Domain Atomistic Simulation

Many-particle Auger-type processes are common in nanoscale materials due to a combination of high densities of states that can support multiple excitations and substantial Coulomb coupling between charges enhanced by quantum confinement. Auger decay dynamics in (10,5) semiconductor carbon nanotubes (CNT) with different aspect ratios and particle densities are simulated in time domain using global flux surface hopping, recently developed and implemented within Kohn-Sham tight-binding density functional theory. Despite an increasing density of states, the multiparticle Auger recombination rate decreases in longer CNTs. The atomistic simulation shows that the effect is directly related to the coupling between electronic states, which decreases as the aspect ratio becomes larger. The dependence on tube length is stronger for three-exciton than two-exciton recombination and the calculated time scale ratio approaches the experimental value measured for long CNTs. Phonon-assisted transitions play a particularly important role during Auger recombination. Electron-phonon relaxation is faster than the recombination, and Auger transitions are assisted by phonons over a range of frequencies up to the G-mode. The involvement of phonons strongly enhances the probability of transitions involving asymmetric electron-hole pairs. The time-domain atomistic simulation mimics directly time-resolved optical experiments and provides a detailed, systematic analysis of the phonon-assisted Auger dynamics.

Biexciton Auger Recombination Differs in Hybrid and Inorganic Halide Perovskite Quantum Dots

We use time-resolved photoluminescence measurements to determine the biexciton Auger recombination rate in both hybrid organic-inorganic and fully inorganic halide perovskite nanocrystals as a function of nanocrystal volume. We find that the volume scaling of the biexciton Auger rate in the hybrid perovskites, containing a polar organic A-site cation, is significantly shallower than in the fully inorganic Cs-based nanocrystals. As the nanocrystals become smaller, the Auger rate in the hybrid nanocrystals increases even less than expected, compared to the fully inorganic nanocrystals, which already show a shallower volume dependence than other material systems such as chalcogenide quantum dots. This finding suggests there may be differences in the strength of Coulombic interactions between the fully inorganic and hybrid perovskites, which may prove to be crucial in selecting materials to obtain the highest performing devices in the future, and hints that there could be something "special" about the hybrid materials.

Multiple Exciton Generation in Nanostructures for Advanced Photovoltaic Cells

This paper reviews both experimental and theoretical work on nanostructures showing high quantum yields due to the phenomenon of multiple exciton generation. It outlines the aims and barriers to progress in identifying further such nanostructures and also includes important developments concerning solar devices where nanostructures act as the light-absorbing component. It reports on both semiconductor and carbon structures, both monocomposite (of various dimensionalities) and heterogeneous. Finally, it looks at future directions that can be taken to push solar cell efficiency above the classic limit set by Shockley and Queisser in 1961.

Route to Improving Photovoltaics Based on CdSe/CdSexTe1-x Type-II Heterojunction Nanorods: The Effect of Morphology and Cosensitization on Carrier Recombination and Transport

One-dimensionally elongated nanoparticles with type-II staggered band offset are of potential use as light-harvesting materials for photovoltaics, but only a limited attention has been given to elucidate the factors governing the cell performance obtainable from such materials. Herein, we describe a combined strategy to enhance charge collection from CdSe/CdSe_xTe_1-x type-II heterojunction nanorods (HNRs) utilized as light harvesters for sensitized solar cells. By integrating morphology- and composition-tuned type-II HNRs into solar cells, factors that yield interfaces favorable both for the electron injection into TiO₂ and hole transfer to electrolyte are examined. Furthermore, it is shown that a more efficient photovoltaic system results from cosensitization with CdS quantum dots (QDs) predeposited on a TiO₂ scaffold, which improves charge collection from HNRs. Electrochemical impedance spectroscopy (EIS) analysis suggests that such a synergistically enhanced system benefits from the decreased recombination within HNRs and facilitated charge transport through the cosensitized TiO₂ electrode, even with the activation of a recombination path presumably related to the photogenerated holes in CdS QDs.

Control of Multiple Exciton Generation and Electron-Phonon Coupling by Interior Nanospace in Hyperstructured Quantum Dot Superlattice

The possibility of precisely manipulating interior nanospace, which can be adjusted by ligand-attaching down to the subnanometer regime, in a hyperstructured quantum dot (QD) superlattice (QDSL) induces a new kind of collective resonant coupling among QDs and opens up new opportunities for developing advanced optoelectric and photovoltaic devices. Here, we report the first real-time dynamics simulations of the multiple exciton generation (MEG) in one-, two-, and three-dimensional (1D, 2D, and 3D) hyperstructured H-passivated Si QDSLs, accounting for thermally fluctuating band energies and phonon dynamics obtained by finite-temperature ab initio molecular dynamics simulations. We computationally demonstrated that the MEG was significantly accelerated, especially in the 3D QDSL compared to the 1D and 2D QDSLs. The MEG acceleration in the 3D QDSL was almost 1.9 times the isolated QD case. The dimension-dependent MEG acceleration was attributed not only to the static density of states but also to the dynamical electron-phonon couplings depending on the dimensionality of the hyperstructured QDSL, which is effectively controlled by the interior nanospace. Such dimension-dependent modifications originated from the short-range quantum resonance among component QDs and were intrinsic to the hyperstructured QDSL. We propose that photoexcited dynamics including the MEG process can be effectively controlled by only manipulating the interior nanospace of the hyperstructured QDSL without changing component QD size, shape, compositions, ligand, etc.

Carrier Multiplication Mechanisms and Competing Processes in Colloidal Semiconductor Nanostructures

Quantum confined semiconductor nanoparticles, such as colloidal quantum dots, nanorods and nanoplatelets have broad extended absorption spectra at energies above their bandgaps. This means that they can absorb light at high photon energies leading to the formation of hot excitons with finite excited state lifetimes. During their existence, the hot electron and hole that comprise the exciton may start to cool as they relax to the band edge by phonon mediated or Auger cooling processes or a combination of these. Alongside these cooling processes, there is the possibility that the hot exciton may split into two or more lower energy excitons in what is termed carrier multiplication (CM). The fission of the hot exciton to form lower energy multiexcitons is in direct competition with the cooling processes, with the timescales for multiplication and cooling often overlapping strongly in many materials. Once CM has been achieved, the next challenge is to preserve the multiexcitons long enough to make use of the bonus carriers in the face of another competing process, non-radiative Auger recombination. However, it has been found that Auger recombination and the several possible cooling processes can be manipulated and usefully suppressed or retarded by engineering the nanoparticle shape, size or composition and by the use of heterostructures, along with different choices of surface treatments. This review surveys some of the work that has led to an understanding of the rich carrier dynamics in semiconductor nanoparticles, and that has started to guide materials researchers to nanostructures that can tilt the balance in favour of efficient CM with sustained multiexciton lifetimes.

Efficient Carrier Multiplication in Colloidal Silicon Nanorods

Auger recombination lifetimes, absorption cross sections, and the quantum yields of carrier multiplication (CM), or multiexciton generation (MEG), were determined for solvent-dispersed silicon (Si) nanorods using transient absorption spectroscopy (TAS). Nanorods with an average diameter of 7.5 nm and aspect ratios of 6.1, 19.3, and 33.2 were examined. Colloidal Si nanocrystals of similar diameters were also studied for comparison. The nanocrystals and nanorods were passivated with organic ligands by hydrosilylation to prevent surface oxidation and limit the effects of surface trapping of photoexcited carriers. All samples used in the study exhibited relatively efficient photoluminescence. The Auger lifetimes increased with nanorod length, and the nanorods exhibited higher CM quantum yield and efficiency than the nanocrystals with a similar band gap energy E_g. Beyond a critical length, the CM quantum yield decreases. Nanorods with the aspect ratio of 19.3 had the highest CM quantum yield of 1.6 ± 0.2 at 2.9E_g, which corresponded to a multiexciton yield that was twice as high as observed for the spherical nanocrystals.

Area- and Thickness-Dependent Biexciton Auger Recombination in Colloidal CdSe Nanoplatelets: Breaking the "Universal Volume Scaling Law"

Colloidal nanoplatelets (NPLs) have shown great potentials for lasing applications due to their sharp absorption and emission peaks, large absorption cross sections, large radiative decay rates, and long multiexciton lifetimes. How multiexciton lifetimes depend on material dimensions remains unknown in two-dimensional (2D) materials, despite being a key parameter affecting optical gain threshold and many other properties. Herein, we report a study of room-temperature biexciton Auger recombination time of CdSe NPLs as a function of thickness and lateral area. Comparison of all NPLs shows that the biexciton lifetime does not increase linearly with volume, unlike previously reported "universal volume scaling law" for quantum dots. For NPLs of the same thickness (∼1.8 nm), the biexciton lifetime increase linearly with their lateral area (from 143.7 ± 12.6 to 320.1 ± 17.1 ps when the area increases from 90.5 ± 21.4 to 234.2 ± 41.9 nm²). The biexciton lifetime depends linearly on (1/E_k(e))^7/2 (E_k(e) is the electron confinement energy) or nearly linearly on d⁷ (d is NPL thickness). The observed dependence is consistent with a model in which biexciton Auger recombination rate scales with the product of exciton binary collision frequency and Auger recombination probability in biexciton complexes. The linear increase of Auger lifetimes with NPL lateral areas reflects a 1/area dependence of the binary collision frequency for 2D excitons and the thickness-dependent biexciton Auger recombination time is attributed to its strong dependence on the degree of quantum confinement. This model may be generally applicable to exciton Auger recombination in quantum confined 1D and 2D nanomaterials.

Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

The field of nanocrystal quantum dots (QDs) is already more than 30 years old, and yet continuing interest in these structures is driven by both the fascinating physics emerging from strong quantum confinement of electronic excitations, as well as a large number of prospective applications that could benefit from the tunable properties and amenability toward solution-based processing of these materials. The focus of this review is on recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion. A specific underlying theme is innovative concepts for tuning the properties of QDs beyond what is possible via traditional size manipulation, particularly through heterostructuring. Examples of such advanced control of nanocrystal functionalities include the following: interface engineering for suppressing Auger recombination in the context of QD LEDs and lasers; Stokes-shift engineering for applications in large-area luminescent solar concentrators; and control of intraband relaxation for enhanced carrier multiplication in advanced QD photovoltaics. We examine the considerable recent progress on these multiple fronts of nanocrystal research, which has resulted in the first commercialized QD technologies. These successes explain the continuing appeal of this field to a broad community of scientists and engineers, which in turn ensures even more exciting results to come from future exploration of this fascinating class of materials.

Thickness-Controlled Quasi-Two-Dimensional Colloidal PbSe Nanoplatelets

We demonstrate controlled synthesis of discrete two-dimensional (2D) PbSe nanoplatelets (NPLs), with measurable photoluminescence, via oriented attachment directed by quantum dot (QD) surface chemistry. Halide passivation is critical to the growth of these (100) face-dominated NPLs, as corroborated by density functional theory studies. PbCl₂ moieties attached to the (111) and (110) of small nanocrystals form interparticle bridges, aligning the QDs and leading to attachment. We find that a 2D bridging network is energetically favored over a 3D network, driving the formation of NPLs. Although PbI₂ does not support bridging, its presence destabilizes the large (100) faces of NPLs, providing means for tuning NPL thickness. Spectroscopic analysis confirms the predicted role of thickness-dependent quantum confinement on the NPL band gap.

Theory of highly efficient multiexciton generation in type-II nanorods

Multiexciton generation, by which more than a single electron–hole pair is generated on optical excitation, is a promising paradigm for pushing the efficiency of solar cells beyond the Shockley–Queisser limit of 31%. Utilizing this paradigm, however, requires the onset energy of multiexciton generation to be close to twice the band gap energy and the efficiency to increase rapidly above this onset. This challenge remains unattainable even using confined nanocrystals, nanorods or nanowires. Here, we show how both goals can be achieved in a nanorod heterostructure with type-II band offsets. Using pseudopotential atomistic calculation on a model type-II semiconductor heterostructure we predict the optimal conditions for controlling multiexciton generation efficiencies at twice the band gap energy. For a finite band offset, this requires a sharp interface along with a reduction of the exciton cooling and may enable a route for breaking the Shockley–Queisser limit.

Multiple exciton generation could help limit thermalization losses in solar cells, but the efficiency of the process is still limited. Here, the authors show by atomistic calculations that type-II interfaces in nanostructures along with a change in exciton cooling rate favour multiple exciton generation.

Efficient Biexciton Interaction in Perovskite Quantum Dots Under Weak and Strong Confinement

Cesium lead halide perovskite quantum dots (PQDs) have emerged as a promising new platform for lighting applications. However, to date, light emitting diodes (LED) based on these materials exhibit limited efficiencies. One hypothesized limiting factor is fast nonradiative multiexciton Auger recombination. Using ultrafast spectroscopic techniques, we investigate multicarrier interaction and recombination mechanisms in cesium lead halide PQDs. By mapping the dependence of the biexciton Auger lifetime and the biexciton binding energy on nanomaterial size and composition, we find unusually strong Coulomb interactions among multiexcitons in PQDs. This results in weakly emissive biexcitons and trions, and accounts for low light emission efficiencies. We observe that, for strong confinement, the biexciton lifetime depends linearly on the PQD volume. This dependence becomes sublinear in the weak confinement regime as the PQD size increases beyond the Bohr radius. We demonstrate that Auger recombination is faster in PQDs compared to CdSe nanoparticles having the same volume, suggesting a stronger Coulombic interaction in the PQDs. We confirm this by demonstrating an increased biexciton binding energy, which reaches a maximum of about 100 meV, fully three times larger than in CdSe quantum dots. The biexciton shift can lead to low-threshold optical gain in these materials. These findings also suggest that materials engineering to reduce Coulombic interaction in cesium lead halide PQDs could improve prospects for high efficiency optoelectronic devices. Core-shell structures, in particular type-II nanostructures, which are known to reduce the bandedge Coulomb interaction in CdSe/CdS, could beneficially be applied to PQDs with the goal of increasing their potential in lighting applications.

Hot exciton cooling and multiple exciton generation in PbSe quantum dots

PbSe QDs show high multiple exciton generation (MEG) quantum yield. Here we have investigated the role of theΣtransition in slowing down the hot exciton cooling, which can help MEG to take over phonon relaxation.

Quantum confined colloidal nanorod heterostructures for solar-to-fuel conversion

Colloidal one-dimensional (1D) semiconductor nanorods (NRs) offer the opportunity to simultaneously maintain quantum confinement in radial dimensions for tunable light absorptions and bulk like carrier transport in the axial direction for long-distance charge separations.

Ultrafast Charge Dynamics in Trap-Free and Surface-Trapping Colloidal Quantum Dots

Ultrafast transient absorption spectroscopy is used to study subnanosecond charge dynamics in CdTe colloidal quantum dots. After treatment with chloride ions, these can become free of surface traps that produce nonradiative recombination. A comparison between these dots and the same dots before treatment enables new insights into the effect of surface trapping on ultrafast charge dynamics. The surface traps typically increase the rate of electron cooling by 70% and introduce a recombination pathway that depopulates the conduction band minimum of single excitons on a subnanosecond timescale, regardless of whether the sample is stirred or flowed. It is also shown that surface trapping significantly reduces the peak bleach obtained for a particular pump fluence, which has important implications for the interpretation of transient absorption data, including the estimation of absorption cross-sections and multiple exciton generation yields.