Dynamic process of phase transition from wurtzite to zinc blende structure in InAs nanowires

Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures

The strategic integration of low-dimensional InAs-based materials and emerging van der Waals systems is advancing in various scientific fields, including electronics, optics, and magnetics. With their unique properties, these InAs-based van der Waals materials and devices promise further miniaturization of semiconductor devices in line with Moore's Law. However, progress in this area lags behind other 2D materials like graphene and boron nitride. Challenges include synthesizing pure crystalline phase InAs nanostructures and single-atomic-layer 2D InAs films, both vital for advanced van der Waals heterostructures. Also, diverse surface state effects on InAs-based van der Waals devices complicate their performance evaluation. This review discusses the experimental advances in the van der Waals epitaxy of InAs-based materials and the working principles of InAs-based van der Waals devices. Theoretical achievements in understanding and guiding the design of InAs-based van der Waals systems are highlighted. Focusing on advancing novel selective area growth and remote epitaxy, exploring multi-functional applications, and incorporating deep learning into first-principles calculations are proposed. These initiatives aim to overcome existing bottlenecks and accelerate transformative advancements in integrating InAs and van der Waals heterostructures.

In Situ TEM Characterization and Modulation for Phase Engineering of Nanomaterials

Solid-state phase transformation is an intriguing phenomenon in crystalline or noncrystalline solids due to the distinct physical and chemical properties that can be obtained and modified by phase engineering. Compared to bulk solids, nanomaterials exhibit enhanced capability for phase engineering due to their small sizes and high surface-to-volume ratios, facilitating various emerging applications. To establish a comprehensive atomistic understanding of phase engineering, in situ transmission electron microscopy (TEM) techniques have emerged as powerful tools, providing unprecedented atomic-resolution imaging, multiple characterization and stimulation mechanisms, and real-time integrations with various external fields. In this Review, we present a comprehensive overview of recent advances in in situ TEM studies to characterize and modulate nanomaterials for phase transformations under different stimuli, including mechanical, thermal, electrical, environmental, optical, and magnetic factors. We briefly introduce crystalline structures and polymorphism and then summarize phase stability and phase transformation models. The advanced experimental setups of in situ techniques are outlined and the advantages of in situ TEM phase engineering are highlighted, as demonstrated via several representative examples. Besides, the distinctive properties that can be obtained from in situ phase engineering are presented. Finally, current challenges and future research opportunities, along with their potential applications, are suggested.

Size-Dependent Phase Transition in Ultrathin Ga2O3 Nanowires

Gallium oxide (Ga2O3) has attracted extensive attention as a potential candidate for low-dimensional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its wide bandgap, controllable doping, and low cost. The structural stability of nanoscale Ga2O3 is the key parameter for designing and constructing a MOSFET, which however remains unexplored. Using in situ transmission electron microscopy, we reveal the size-dependent phase transition of sub-2 nm Ga2O3 nanowires. Based on theoretical calculations, the transformation pathways from the initial monoclinic β-phase to an intermediate cubic γ-phase and then back to the β-phase have been mapped and identified as a sequence of Ga cation migrations. Our results provide fundamental insights into the Ga2O3 phase stability within the nanoscale, which is crucial for advancing the miniaturization, light weight, and integration of wide-bandgap semiconductor devices.

Real-time thermal decomposition kinetics of GaAs nanowires and their crystal polytypes on the atomic scale

Nanowires (NWs) offer unique opportunities for tuning the properties of III-V semiconductors by simultaneously controlling their nanoscale dimensions and switching their crystal phase between zinc-blende (ZB) and wurtzite (WZ). While much of this control has been enabled by direct, forward growth, the reverse reaction, i.e., crystal decomposition, provides very powerful means to further tailor properties towards the ultra-scaled dimensional level. Here, we use in situ transmission electron microscopy (TEM) to investigate the thermal decomposition kinetics of clean, ultrathin GaAs NWs and the role of distinctly different crystal polytypes in real-time and on the atomic scale. The whole process, from the NW growth to the decomposition, is conducted in situ without breaking vacuum to maintain pristine crystal surfaces. Radial decomposition occurs much faster for ZB- compared to WZ-phase NWs, due to the development of nano-faceted sidewall morphology and sublimation along the entire NW length. In contrast, WZ NWs form single-faceted, vertical sidewalls with decomposition proceeding only via step-flow mechanism from the NW tip. Concurrent axial decomposition is generally faster than the radial process, but is significantly faster (∼4-fold) in WZ phase, due to the absence of well-defined facets at the tip of WZ NWs. The results further show quantitatively the influence of the NW diameter on the sublimation and step-flow decomposition velocities elucidating several effects that can be exploited to fine-tune the NW dimensions.

Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures

III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.

Cation Defect Mediated Phase Transition in Potassium Tungsten Bronze

Applying in situ transmission electron microscopy, the phase instability in potassium tungsten bronze (K_xWO₃, 0.18 < x < 0.57) induced by heating was investigated. The atomistic phase transition pathway of monoclinic K_0.20WO₃ → hexagonal K_mWO₃ (0.18 < m < 0.20) → cubic WO₃ induced by cationic defects (K and W vacancies) was directly revealed. Unexpectedly, a K⁺-rich tetragonal K_nWO₃ (0.40 < n < 0.57) phase would nucleate as well, which may result from the blockage of K⁺ diffusion at the grain boundaries. Our results point out the critical role of the cationic defects in mediating the crystal structures in K_xWO₃, which provide reference to rational structural design for extensive high-temperature applications.

Correlating in situ RHEED and XRD to study growth dynamics of polytypism in nanowires

Design of novel nanowire (NW) based semiconductor devices requires deep understanding and technological control of NW growth. Therefore, quantitative feedback over the structure evolution of the NW ensemble during growth is highly desirable. We analyse and compare the methodical potential of reflection high-energy electron diffraction (RHEED) and X-ray diffraction reciprocal space imaging (XRD) for in situ growth characterization during molecular-beam epitaxy (MBE). Simultaneously recorded in situ RHEED and in situ XRD intensities show strongly differing temporal behaviour and provide evidence of the highly complementary information value of both diffraction techniques. Exploiting the complementarity by a correlative data analysis presently offers the most comprehensive experimental access to the growth dynamics of statistical NW ensembles under standard MBE growth conditions. In particular, the combination of RHEED and XRD allows for translating quantitatively the time-resolved information into a height-resolved information on the crystalline structure without a priori assumptions on the growth model. Furthermore, we demonstrate, how careful analysis of in situ RHEED if supported by ex situ XRD and scanning electron microscopy (SEM), all usually available at conventional MBE laboratories, can also provide highly quantitative feedback on polytypism during growth allowing validation of current vapour-liquid-solid (VLS) growth models.

Quantitative analysis of time-resolved RHEED during growth of vertical nanowires

We present an approach for quantitative evaluation of time-resolved reflection high-energy electron diffraction (RHEED) intensity patterns measured during the growth of vertical, free-standing nanowires (NWs). The approach considers shadowing due to attenuation by absorption and extinction within the individual nanowires and estimates the time dependence of its influence on the RHEED signal of the nanowire ensemble as a function of instrumental RHEED parameters and the growth dynamics averaged over the nanowire ensemble. The developed RHEED simulation model takes into account the nanowire structure evolution related to essential growth aspects, such as axial growth, radial growth with tapering and facet growth, as well as so-called parasitic intergrowth on the substrate. It also considers the influence of the NW density, which turns out to be a sensitive parameter for the time-dependent interpretation of the intensity patterns. Finally, the application potential is demonstrated by evaluating experimental data obtained during molecular beam epitaxy (MBE) of self-catalysed GaAs nanowires. We demonstrate, how electron shadowing enables a time-resolved analysis of the crystal structure evolution at the top part of the growing NWs. The approach offers direct access to study growth dynamics of polytypism in nanowire ensembles at the growth front region under standard growth conditions.

Atomistic and dynamic structural characterizations in low-dimensional materials: recent applications of in situ transmission electron microscopy

In situ transmission electron microscopy has achieved remarkable advances for atomic-scale dynamic analysis in low-dimensional materials and become an indispensable tool in view of linking a material's microstructure to its properties and performance. Here, accompanied with some cutting-edge researches worldwide, we briefly review our recent progress in dynamic atomistic characterization of low-dimensional materials under external mechanical stress, thermal excitations and electrical field. The electron beam irradiation effects in metals and metal oxides are also discussed. We conclude by discussing the likely future developments in this area.

Resilient Pathways to Atomic Attachment of Quantum Dot Dimers and Artificial Solids from Faceted CdSe Quantum Dot Building Blocks

The goal of this work is to identify favored pathways for preparation of defect-resilient attached wurtzite CdX (X = S, Se, Te) nanocrystals. We seek guidelines for oriented attachment of faceted nanocrystals that are most likely to yield pairs of nanocrystals with either few or no electronic defects or electronic defects that are in and of themselves desirable and stable. Using a combination of in situ high-resolution transmission electron microscopy (HRTEM) and electronic structure calculations, we evaluate the relative merits of atomic attachment of wurtzite CdSe nanocrystals on the {11̅00} or {112̅0} family of facets. Pairwise attachment on either facet can lead to perfect interfaces, provided the nanocrystal facets are perfectly flat and the angles between the nanocrystals can adjust during the assembly. Considering defective attachment, we observe for {11̅00} facet attachment that only one type of edge dislocation forms, creating deep hole traps. For {112̅0} facet attachment, we observe that four distinct types of extended defects form, some of which lead to deep hole traps whereas others only to shallow hole traps. HRTEM movies of the dislocation dynamics show that dislocations at {11̅00} interfaces can be removed, albeit slowly. Whereas only some extended defects at {112̅0} interfaces could be removed, others were trapped at the interface. Based on these insights, we identify the most resilient pathways to atomic attachment of pairs of wurtzite CdX nanocrystals and consider how these insights can translate to the creation of electronically useful materials from quantum dots with other crystal structures.

Kinetics of Au-Ga Droplet Mediated Decomposition of GaAs Nanowires

Particle-assisted III-V semiconductor nanowire growth and applications thereof have been studied extensively. However, the stability of nanowires in contact with the particle and the particle chemical composition as a function of temperature remain largely unknown. In this work, we use in situ transmission electron microscopy to investigate the interface between a Au-Ga particle and the top facet of an ⟨1̅1̅1̅⟩-oriented GaAs nanowire grown via the vapor-liquid-solid process. We observed a thermally activated bilayer-by-bilayer removal of the GaAs facet in contact with the liquid particle during annealing between 300 and 420 °C in vacuum. Interestingly, the GaAs-removal rates initially depend on the thermal history of the sample and are time-invariant at later times. In situ X-ray energy dispersive spectroscopy was also used to determine that the Ga content in the particle at any given temperature remains constant over extended periods of time and increases with increasing temperature from 300 to 400 °C. We attribute the observed phenomena to droplet-assisted decomposition of GaAs at a rate that is controlled by the amount of Ga in the droplet. We suggest that the observed transients in removal rates are a direct consequence of time-dependent changes in the Ga content. Our results provide new insights into the role of droplet composition on the thermal stability of GaAs nanowires and complement the existing knowledge on the factors influencing nanowire growth. Moreover, understanding the nanowire stability and decomposition is important for improving processing protocols for the successful fabrication and sustained operation of nanowire-based devices.

Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene via MOCVD parameter space mapping

Self-assembly of InAs nanowire arrays with highest reported aspect ratios and number density by van der Waals epitaxy on graphene is presented.

In Situ TEM Observation of Crystal Structure Transformation in InAs Nanowires on Atomic Scale

In situ transmission electron microscopy investigation of structural transformation in III-V nanowires is essential for providing direct insight into the structural stability of III-V nanowires under elevated temperature. In this study, through in situ heating investigation in a transmission electron microscope, the detailed structural transformation of InAs nanowires from wurtzite structure to zinc-blende structure at the catalyst/nanowire interface is witnessed on the atomic level. Through detailed structural and dynamic analysis, it was found that the nucleation site of each new layer of InAs and catalyst surface energy play a decisive role in the growth of the zinc-blende structure. This study provides new insights into the growth mechanism of zinc-blende-structured III-V nanowires.

Atomistic Interface Dynamics in Sn-Catalyzed Growth of Wurtzite and Zinc-Blende ZnO Nanowires

Unraveling the phase selection mechanisms of semiconductor nanowires (NWs) is critical for the applications in future advanced nanodevices. In this study, the atomistic vapor-solid-liquid growth processes of Sn-catalyzed wurtzite (WZ) and zinc blende (ZB) ZnO are directly revealed based on the in situ transmission electron microscopy. The growth kinetics of WZ and ZB crystal phases in ZnO appear markedly different in terms of the NW-droplet interface, whereas the nucleation site as determined by the contact angle ϕ between the seed particle and the NW is found to be crucial for tuning the NW structure through combined experimental and theoretical investigations. These results offer an atomic-scale view into the dynamic growth process of ZnO NW, which has implications for the phase-controllable synthesis of II-VI compounds and heterostructures with tunable band structures.

Controllable synthesis of single-crystal SnO2 nanowires and tri-crystal SnO2 nanobelts

Depending on the nucleation sites, two types of SnO₂ nanostructures were fabricated: falciform single-crystal SnO₂ nanowires (growth direction from [1̄01] to [001]) and tri-crystal SnO₂ nanobelts containing (301) and (1̄01) twins.

Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase Transformation

The formation of low resistance and self-aligned contacts with thermally stable alloyed phases is a prerequisite for realizing reliable functionality in ultrascaled semiconductor transistors. Detailed structural analysis of the phase transformation accompanying contact alloying can facilitate contact engineering as transistor channels approach a few atoms across. Original in situ heating transmission electron microscopy studies are carried out to record and analyze the atomic scale dynamics of contact alloy formation between Ni and In_0.53 Ga_0.47 As nanowire channels. It is observed that the nickelide reacts on the In_0.53 Ga_0.47 As (111) || Ni₂ In_0.53 Ga_0.47 As (0001) interface with atomic ledge propagation along the Ni₂ In_0.53 Ga_0.47 As [101¯0] direction. Ledges nucleate as a train of strained single-bilayers and propagate in-plane as double-bilayers that are associated with a misfit dislocation of b→=2c3[0001]. The atomic structure is reconstructed to explain this phase transformation that involves collective gliding of three Shockley partials in In_0.53 Ga_0.47 As lattice to cancel out shear stress and the formation of misfit dislocations to compensate the large lattice mismatch in the newly formed nickelide phase and the In_0.53 Ga_0.47 As layers. This work demonstrates the applicability of interfacial disconnection (ledge + dislocation) theory in a nanowire channel during thermally induced phase transformation that is typical in metal/III-V semiconductor reactions.

Wurtzite/Zinc-Blende 'K'-shape InAs Nanowires with Embedded Two-Dimensional Wurtzite Plates

The prediction that Majorana Fermions obey nonabelian exchange statistics can only be tested by interchanging such carriers in "Y'- or 'X'- (or 'K'-) shaped nanowire networks. Here we report the molecular beam epitaxy (MBE) growth of 'K'-shaped InAs nanowires consisting of two interconnected wurtzite wires with an additional zinc-blende wire in between. Moreover, occasionally, the growth results in formation of a purely wurtzite two-dimensional plate between the zinc-blende nanowire and one (sometimes both) intersecting wurtzite arm. By modeling the crystal structure we explain the transformation from wurtzite to zinc-blende and the coexistence of both crystallographic phases in such nanowire structures. To the best of our knowledge neither the MBE growth of an InAs nano-object showing combination of wurtzite and zinc-blende crystal structures nor the growth of pure wurtzite InAs nanoplates in this geometry has been reported before.

Nanotwinned Boron Suboxide (B6O): New Ground State of B6O

Nanotwinned structures in superhard ceramics rhombohedral boron suboxide (R-B6O) have been examined using a combination of transmission electron microscopy (TEM) and quantum mechanics (QM). QM predicts negative relative energies to R-B6O for various twinned R-B6O (denoted as τ-B6O, 2τ-B6O, and 4τ-B6O), consistent with the recently predicted B6O structure with Cmcm space group (τ-B6O) which has an energy 1.1 meV/B6O lower than R-B6O. We report here TEM observations of this τ-B6O structure, confirming the QM predictions. QM studies under pure shear deformation and indentation conditions are used to determine the deformation mechanisms of the new τ-B6O phase which are compared to R-B6O and 2τ-B6O. The lowest stress slip system of τ-B6O is (010)/⟨001⟩ which transforms τ-B6O to R-B6O under pure shear deformation. However, under indentation conditions, the lowest stress slip system changes to (001)/⟨110⟩, leading to icosahedra disintegration and hence amorphous band formation.

Rolling-induced Face Centered Cubic Titanium in Hexagonal Close Packed Titanium at Room Temperature

Combining transmission electron microscopes and density functional theory calculations, we report the nucleation and growth mechanisms of room temperature rolling induced face-centered cubic titanium (fcc-Ti) in polycrystalline hexagonal close packed titanium (hcp-Ti). Fcc-Ti and hcp-Ti take the orientation relation: 〈0001〉_hcp||〈001〉_fcc and , different from the conventional one. The nucleation of fcc-Ti is accomplished via pure-shuffle mechanism with a minimum stable thickness of three atomic layers, and the growth via shear-shuffle mechanisms through gliding two-layer disconnections or pure-shuffle mechanisms through gliding four-layer disconnections. Such phase transformation offers an additional plastic deformation mode comparable to twinning.

Crystal Phase Transformation in Self-Assembled InAs Nanowire Junctions on Patterned Si Substrates

We demonstrate the growth and structural characteristics of InAs nanowire junctions evidencing a transformation of the crystalline structure. The junctions are obtained without the use of catalyst particles. Morphological investigations of the junctions reveal three structures having an L-, T-, and X-shape. The formation mechanisms of these structures have been identified. The NW junctions reveal large sections of zinc blende crystal structure free of extended defects, despite the high stacking fault density obtained in individual InAs nanowires. This segment of zinc blende crystal structure in the junction is associated with a crystal phase transformation involving sets of Shockley partial dislocations; the transformation takes place solely in the crystal phase. A model is developed to demonstrate that only the zinc blende phase with the same orientation as the substrate can result in monocrystalline junctions. The suitability of the junctions to be used in nanoelectronic devices is confirmed by room-temperature electrical experiments.

Perspectives and limitations of symmetric X-ray Bragg reflections for inspecting polytypism in nanowires

X-ray diffraction, possibly time-resolved during growth or annealing, is an important technique for the investigation of polytypism in free-standing nanowires. A major advantage of the X-ray diffraction approach for adequately chosen beam conditions is its high statistical significance in comparison with transmission electron microscopy. In this manuscript the interpretation of such X-ray intensity distribution is discussed, and is shown to be non-trivial and non-unique given measurements of the [111]c or [333]c reflection of polytypic nanowires grown in the (111)c direction. In particular, the diffracted intensity distributions for several statistical distributions of the polytypes inside the nanowires are simulated and compared. As an example, polytypic GaAs nanowires are employed, grown on a Si-(111) substrate with an interplanar spacing of the Ga (or As) planes in the wurtzite arrangement that is 0.7% larger than in the zinc blende arrangement along the (111)c direction. Most importantly, ambiguities of high experimental relevance in the case of strongly fluctuating length of the defect-free polytype segments in the nanowires are demonstrated. As a consequence of these ambiguities, a large set of deviations from the widely used Markov model for the stacking sequences of the nanowires cannot be detected in the X-ray diffraction data. Thus, the results here are of high relevance for the proper interpretation of such data.

Low-energy, Mobile Grain Boundaries in Magnesium

The strong basal texture that is commonly developed during the rolling of magnesium alloy and can even increase during annealing motivates atomic-level study of dislocation structures of both <0001> tilt and twist grain boundaries (GBs) in Magnesium. Both symmetrical tilt and twist GBs over the entire range of rotation angles θ between 0° and 60° are found to have an ordered atomic structure and can be described with grain boundary dislocation models. In particular, 30° tilt and twist GBs are corresponding to energy minima. The 30° tilt GB is characterized with an array of Shockley partial dislocations bp:-bp on every basal plane and the 30° twist GB is characterized with a stacking faulted structure. More interesting, molecular dynamics simulations explored that both 30° tilt and twist GBs are highly mobile associated with collective glide of Shockley partial dislocations. This could be responsible for the formation of the strong basal texture and a significant number of 30° misorientation GBs in Mg alloy during grain growth.

Growth and Stress-induced Transformation of Zinc blende AlN Layers in Al-AlN-TiN Multilayers

AlN nanolayers in sputter deposited {111}Al/AlN/TiN multilayers exhibit the metastable zinc-blende-structure (z-AlN). Based on density function theory calculations, the growth of the z-AlN is ascribed to the kinetically and energetically favored nitridation of the deposited aluminium layer. In situ nanoindentation of the as-deposited {111}Al/AlN/TiN multilayers in a high-resolution transmission electron microscope revealed the z-AlN to wurzite AlN phase transformation through collective glide of Shockley partial dislocations on every two {111} planes of the z-AlN.

Zn-dopant dependent defect evolution in GaN nanowires

Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101¯3), (101¯1) and (202¯1), as well as Type I stacking faults (…ABABCBCB…), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (…ABABACBA…) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.

In situ observation of the sodiation process in CuO nanowires

We observed the dynamic evolution of the morphology and phase transformations of CuO nanowires during sodiation using in situ transmission electron microscopy. These results will facilitate our fundamental understanding of the sodiation mechanism of CuO nanostructures used as electrode materials in sodium ion batteries.

Crossed Ga2O3/SnO2 multiwire architecture: a local structure study with nanometer resolution

Crossed nanowire structures are the basis for high-density integration of a variety of nanodevices. Owing to the critical role of nanowires intersections in creating hybrid architectures, it has become a challenge to investigate the local structure in crossing points in metal oxide nanowires. Thus, if intentionally grown crossed nanowires are well-patterned, an ideal model to study the junction is formed. By combining electron and synchrotron beam nanoprobes, we show here experimental evidence of the role of impurities in the coupling formation, structural modifications, and atomic site configuration based on crossed Ga2O3/SnO2 nanowires. Our experiment opens new avenues for further local structure studies with both nanometer resolution and elemental sensitivity.

Void-assisted plasticity in Ag nanowires with a single twin structure

By employing the in situ transmission electron microscopy (TEM) technique, tensile deformation behaviors of a silver nanowire (NW) with a single twin structure were studied. Our observations revealed that the initial stage of plastic deformation was dominated by surface-mediated partial dislocation activities. Strikingly, the void formation and growth were shown to govern the later stage of plasticity, leading to the ductile type of fracture in NWs. Possible void nucleation and growth mechanisms were discussed. Additionally, TEM images show the transformation from bi-crystal to polycrystal in the fracture area, likely due to the void activity. Our results have implications in the assembly of functional structures applying nano-building blocks.

Real-time visualization of nanocrystal solid-solid transformation pathways

Measurement and understanding of the microscopic pathways materials follow as they transform is crucial for the design and synthesis of new metastable phases of matter. Here we employ femtosecond single-shot X-ray diffraction techniques to measure the pathways underlying solid-solid phase transitions in cadmium sulfide nanorods, a model system for a general class of martensitic transformations. Using picosecond rise-time laser-generated shocks to trigger the transformation, we directly observe the transition state dynamics associated with the wurtzite-to-rocksalt structural phase transformation in cadmium sulfide with atomic-scale resolution. A stress-dependent transition path is observed. At high peak stresses, the majority of the sample is converted directly into the rocksalt phase with no evidence of an intermediate prior to rocksalt formation. At lower peak stresses, a transient five-coordinated intermediate structure is observed consistent with previous first principles modeling.