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Schmiedeke P, Döblinger M, Meinhold-Heerlein MA, Doganlar C, Finley JJ, Koblmüller G. Sb-saturated high-temperature growth of extended, self-catalyzed GaAsSb nanowires on silicon with high quality. NANOTECHNOLOGY 2023; 35:055601. [PMID: 37879325 DOI: 10.1088/1361-6528/ad06ce] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Accepted: 10/25/2023] [Indexed: 10/27/2023]
Abstract
Ternary GaAsSb nanowires (NW) are key materials for integrated high-speed photonic applications on silicon (Si), where homogeneous, high aspect-ratio dimensions and high-quality properties for controlled absorption, mode confinement and waveguiding are much desired. Here, we demonstrate a unique high-temperature (high-T >650 °C) molecular beam epitaxial (MBE) approach to realize self-catalyzed GaAsSb NWs site-selectively on Si with high aspect-ratio and non-tapered morphologies under antimony (Sb)-saturated conditions. While hitherto reported low-moderate temperature growth processes result in early growth termination and inhomogeneous morphologies, the non-tapered nature of NWs under high-T growth is independent of the supply rates of relevant growth species. Analysis of dedicated Ga-flux and growth time series, allows us to pinpoint the microscopic mechanisms responsible for the elimination of tapering, namely concurrent vapor-solid, step-flow growth along NW side-facets enabled by enhanced Ga diffusion under the high-T growth. Performing growth in an Sb-saturated regime, leads to high Sb-content in VLS-GaAsSb NW close to 30% that is independent of Ga-flux. This independence enables multi-step growth via sequentially increased Ga-flux to realize uniform and very long (>7μm) GaAsSb NWs. The excellent properties of these NWs are confirmed by a completely phase-pure, twin-free zincblende (ZB) crystal structure, a homogeneous Sb-content along the VLS-GaAsSb NW growth axis, along with remarkably narrow, single-peak low-temperature photoluminescence linewidth (<15 meV) at wavelengths of ∼1100-1200 nm.
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Affiliation(s)
- P Schmiedeke
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - M Döblinger
- Department of Chemistry, Ludwig-Maximilians-University Munich, Munich, Germany
| | - M A Meinhold-Heerlein
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - C Doganlar
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - J J Finley
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - G Koblmüller
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
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2
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Barettin D, Shtrom IV, Reznik RR, Cirlin GE. Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13111737. [PMID: 37299640 DOI: 10.3390/nano13111737] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Revised: 05/16/2023] [Accepted: 05/24/2023] [Indexed: 06/12/2023]
Abstract
We present a study with a numerical model based on k→·p→, including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots, in particular the thickness, are obtained from experimental data measured by our group. We also present a comparison between the experimental and numerically calculated spectra to support the validity of our model.
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Affiliation(s)
- Daniele Barettin
- Department of Electronic Engineering, Università Niccoló Cusano, 00133 Rome, Italy
| | - Igor V Shtrom
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia
| | - Rodion R Reznik
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia
- Department of Physics, ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - George E Cirlin
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia
- Department of Physics, ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
- Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103 St. Petersburg, Russia
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3
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Jeong HW, Ajay A, Yu H, Döblinger M, Mukhundhan N, Finley JJ, Koblmüller G. Sb-Mediated Tuning of Growth- and Exciton Dynamics in Entirely Catalyst-Free GaAsSb Nanowires. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207531. [PMID: 36670090 DOI: 10.1002/smll.202207531] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 01/03/2023] [Indexed: 06/17/2023]
Abstract
Vapor-liquid-solid (VLS) growth is the mainstream method in realizing advanced semiconductor nanowires (NWs), as widely applied to many III-V compounds. It is exclusively explored also for antimony (Sb) compounds, such as the relevant GaAsSb-based NW materials, although morphological inhomogeneities, phase segregation, and limitations in the supersaturation due to Sb strongly inhibit their growth dynamics. Fundamental advances are now reported here via entirely catalyst-free GaAsSb NWs, where particularly the Sb-mediated effects on the NW growth dynamics and physical properties are investigated in this novel growth regime. Remarkably, depending on GaAsSb composition and nature of the growth surface, both surfactant and anti-surfactant action is found, as seen by transitions between growth acceleration and deceleration characteristics. For threshold Sb-contents up to 3-4%, adatom diffusion lengths are increased ≈sevenfold compared to Sb-free GaAs NWs, evidencing the significant surfactant effect. Furthermore, microstructural analysis reveals unique Sb-mediated transitions in compositional structure, as well as substantial reduction in twin defect density, ≈tenfold over only small compositional range (1.5-6% Sb), exhibiting much larger dynamics as found in VLS-type GaAsSb NWs. The effect of such extended twin-free domains is corroborated by ≈threefold increases in exciton lifetime (≈4.5 ns) due to enlarged electron-hole pair separation in these phase-pure NWs.
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Affiliation(s)
- Hyowon W Jeong
- Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching bei München, Germany
| | - Akhil Ajay
- Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching bei München, Germany
| | - Haiting Yu
- Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching bei München, Germany
| | - Markus Döblinger
- Department of Chemistry, Ludwig-Maximilians-Universität München, 81377, Munich, Germany
| | - Nitin Mukhundhan
- Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching bei München, Germany
| | - Jonathan J Finley
- Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching bei München, Germany
| | - Gregor Koblmüller
- Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching bei München, Germany
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4
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Barettin D, Shtrom IV, Reznik RR, Mikushev SV, Cirlin GE, Auf der Maur M, Akopian N. Direct Band Gap AlGaAs Wurtzite Nanowires. NANO LETTERS 2023; 23:895-901. [PMID: 36649590 DOI: 10.1021/acs.nanolett.2c04184] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Wurtzite AlGaAs is a technologically promising yet unexplored material. Here we study it both experimentally and numerically. We develop a complete numerical model based on an 8-band k→·p→ method, including electromechanical fields, and calculate the optoelectronic properties of wurtzite AlGaAs nanowires with different Al content. We then compare them with our experimental data. Our results strongly suggest that wurtzite AlGaAs is a direct band gap material. Moreover, we have also numerically obtained the band gap of wurtzite AlAs and the valence band offset between AlAs and GaAs in the wurtzite symmetry.
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Affiliation(s)
- Daniele Barettin
- Department of Electronic Engineering, Università degli Studi Niccolò Cusano - Telematica, via don Carlo Gnocchi 3, Rome00166, Italy
| | - Igor V Shtrom
- St. Petersburg State University, Saint Petersburg199034, Russian Federation
- Alferov University, Saint Petersburg194021, Russian Federation
- Institute for Analytical Instrumentation, Russian Academy of Sciences, Saint Petersburg190103, Russian Federation
| | - Rodion R Reznik
- St. Petersburg State University, Saint Petersburg199034, Russian Federation
| | - Sergey V Mikushev
- St. Petersburg State University, Saint Petersburg199034, Russian Federation
| | - George E Cirlin
- St. Petersburg State University, Saint Petersburg199034, Russian Federation
- Alferov University, Saint Petersburg194021, Russian Federation
- Institute for Analytical Instrumentation, Russian Academy of Sciences, Saint Petersburg190103, Russian Federation
| | - Matthias Auf der Maur
- Department of Electronic Engineering, University of Rome Tor Vergata, Rome00133, Italy
| | - Nika Akopian
- DTU Department of Electrical and Photonics Engineering, Technical University of Denmark, Kgs. Lyngby2800, Denmark
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5
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Parakh M, Pokharel R, Dawkins K, Devkota S, Li J, Iyer S. Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors. NANOSCALE ADVANCES 2022; 4:3919-3927. [PMID: 36133330 PMCID: PMC9470064 DOI: 10.1039/d2na00359g] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/07/2022] [Accepted: 08/10/2022] [Indexed: 06/16/2023]
Abstract
In this study, molecular beam epitaxially grown axially configured ensemble GaAsSb/GaAs separate absorption, charge, and multiplication (SACM) region-based nanowire avalanche photodetector device on non-patterned Si substrate is presented. Our device exhibits a low breakdown voltage (V BR) of ∼ -10 ± 2.5 V under dark, photocurrent gain (M) varying from 20 in linear mode to avalanche gain of 700 at V BR at a 1.064 μm wavelength. Positive temperature dependence of breakdown voltage ∼ 12.6 mV K-1 further affirms avalanche breakdown as the gain mechanism in our SACM NW APDs. Capacitance-voltage (C-V) and temperature-dependent noise characteristics also validated punch-through voltage ascertained from I-V measurements, and avalanche being the dominant gain mechanism in the APDs. The ensemble SACM NW APD device demonstrated a broad spectral room temperature response with a cut-off wavelength of ∼1.2 μm with a responsivity of ∼0.17-0.38 A W-1 at -3 V. This work offers a potential pathway toward realizing tunable nanowire-based avalanche photodetectors compatible with traditional Si technology.
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Affiliation(s)
- M Parakh
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University Greensboro North Carolina 27411 USA
| | - R Pokharel
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University Greensboro North Carolina 27411 USA
| | - K Dawkins
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University Greensboro North Carolina 27411 USA
| | - S Devkota
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University Greensboro North Carolina 27411 USA
| | - J Li
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University Greensboro North Carolina 27411 USA
| | - S Iyer
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University Greensboro North Carolina 27411 USA
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6
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Qu X, Zhou C, Li A, Li W, Li W, Wang K, Zheng K. Atomic-Scale Observation of Unusual Dislocations in GaAs-GaAsSb Heterostructured Nanowires. ACS APPLIED MATERIALS & INTERFACES 2022; 14:7513-7521. [PMID: 35077150 DOI: 10.1021/acsami.1c24182] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Cognizing the structural characteristics of a heterointerface is significant to understand the growth mechanism of heterostructured nanowires. Here, the structural characteristics of a heterointerface in GaAs-GaAsSb heterostructured nanowires were investigated by employing spherical aberration (CS)-corrected transmission electron microscopy (TEM). It is found that some unusual dislocations are formed at the heterointerface, leading to the bending of nanowires. Further, the atomically inhomogeneous distribution of Sb content near the heterointerface is revealed, which is responsible for the formation of dislocations. By applying a thermal electric system equipped in the Cs-corrected TEM, a direct observation of structural evolution at the heterointerface was enabled and the stability of GaAs-GaAsSb heterostructured nanowires was evaluated. In situ high-resolution TEM imaging indicates that the destabilization of the heterointerface occurs during nanowire annealing. This study builds a direct correlation between the nanowire heterointerfacial structure with nanowire growth behavior and its stability, which is of importance for heterostructured nanowire design for practical use.
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Affiliation(s)
- Xianlin Qu
- Beijing Key Lab of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Chen Zhou
- National Engineering Research Center of Chemical Fertilizer Catalyst, School of Chemical Engineering, Fuzhou University, Fuzhou 350002, Fujian, China
| | - Ang Li
- Beijing Key Lab of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Wei Li
- Beijing Key Lab of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Wanpeng Li
- Department of Materials Science & Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong
| | - Kaiwen Wang
- Beijing Key Lab of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Kun Zheng
- Beijing Key Lab of Microstructure and Properties of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
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7
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Ruhstorfer D, Lang A, Matich S, Döblinger M, Riedl H, Finley JJ, Koblmüller G. Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy. NANOTECHNOLOGY 2021; 32:135604. [PMID: 33238260 DOI: 10.1088/1361-6528/abcdca] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report a comprehensive study of the growth dynamics in highly periodic, composition tunable InAsSb nanowire (NW) arrays using catalyst-free selective area molecular beam epitaxy. Employing periodically patterned SiO2-masks on Si (111) with various mask opening sizes (20-150 nm) and pitches (0.25-2 μm), high NW yield of >90% (irrespective of the InAsSb alloy composition) is realized by the creation of an As-terminated 1 × 1-Si(111) surface prior to NW nucleation. While the NW aspect ratio decreases continually with increasing Sb content (x Sb from 0% to 30%), we find a remarkable dependence of the aspect ratio on the mask opening size yielding up to ∼8-fold increase for openings decreasing from 150 to 20 nm. The effects of the interwire separation (pitch) on the NW aspect ratio are strongest for pure InAs NWs and gradually vanish for increasing Sb content, suggesting that growth of InAsSb NW arrays is governed by an In surface diffusion limited regime even for the smallest investigated pitches. Compositional analysis using high-resolution x-ray diffraction reveals a substantial impact of the pitch on the alloy composition in homogeneous InAsSb NW arrays, leading to much larger x Sb as the pitch increases due to decreasing competition for Sb adatoms. Scanning transmission electron microscopy and associated energy-dispersive x-ray spectroscopy performed on the cross-sections of individual NWs reveal an interesting growth-axis dependent core-shell like structure with a discontinuous few-nm thick Sb-deficient coaxial boundary layer and six Sb-deficient corner bands. Further analysis evidences the presence of a nanoscale facet at the truncation of the (111)B growth front and {1-10} sidewall surfaces that is found responsible for the formation of the characteristic core-shell structure.
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Affiliation(s)
- Daniel Ruhstorfer
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany
| | - Armin Lang
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany
| | - Sonja Matich
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany
| | - Markus Döblinger
- Department of Chemistry, Ludwig-Maximilians-University Munich, Munich, Germany
| | - Hubert Riedl
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany
| | - Jonathan J Finley
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany
| | - Gregor Koblmüller
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany
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8
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Ghasemi M, Leshchenko ED, Johansson J. Assembling your nanowire: an overview of composition tuning in ternary III-V nanowires. NANOTECHNOLOGY 2021; 32:072001. [PMID: 33091889 DOI: 10.1088/1361-6528/abc3e2] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The ability to grow defect-free nanowires in lattice-mismatched material systems and to design their properties has made them ideal candidates for applications in fields as diverse as nanophotonics, nanoelectronics and medicine. After studying nanostructures consisting of elemental and binary compound semiconductors, scientists turned their attention to more complex systems-ternary nanowires. Composition control is key in these nanostructures since it enables bandgap engineering. The use of different combinations of compounds and different growth methods has resulted in numerous investigations. The aim of this review is to present a survey of the material systems studied to date, and to give a brief overview of the issues tackled and the progress achieved in nanowire composition tuning. We focus on ternary III x III1-x V nanowires (AlGaAs, AlGaP, AlInP, InGaAs, GaInP and InGaSb) and IIIV x V1-x nanowires (InAsP, InAsSb, InPSb, GaAsP, GaAsSb and GaSbP).
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Affiliation(s)
| | - Egor D Leshchenko
- Solid State Physics and NanoLund, Lund University, P O Box 118, SE-221 00 Lund, Sweden
| | - Jonas Johansson
- Solid State Physics and NanoLund, Lund University, P O Box 118, SE-221 00 Lund, Sweden
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9
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Devkota S, Parakh M, Johnson S, Ramaswamy P, Lowe M, Penn A, Reynolds L, Iyer S. A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector. NANOTECHNOLOGY 2020; 31:505203. [PMID: 33021209 DOI: 10.1088/1361-6528/abb506] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
This work reports a comprehensive investigation of the effect of gallium telluride (GaTe) cell temperature variation (TGaTe) on the morphological, optical, and electrical properties of doped-GaAsSb nanowires (NWs) grown by Ga-assisted molecular beam epitaxy (MBE). These studies led to an optimum doping temperature of 550 °C for the growth of tellurium (Te)-doped GaAsSb NWs with the best optoelectronic and structural properties. Te incorporation resulted in a decrease in the aspect ratio of the NWs causing an increase in the Raman longitudinal optical/transverse optical vibrational mode intensity ratio, large photoluminescence emission with an exponential decay tail on the high energy side, promoting tunnel-assisted current conduction in ensemble NWs and significant photocurrent enhancement in the single nanowire. A Schottky barrier photodetector (PD) using Te-doped ensemble NWs with broad spectral range and a longer wavelength cutoff at ∼1.2 µm was demonstrated. These PDs exhibited responsivity in the range of 580-620 A W-1 and detectivity of 1.2-3.8 × 1012 Jones. The doped GaAsSb NWs have the potential for further improvement, paving the path for high-performance near-infrared (NIR) photodetection applications.
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Affiliation(s)
- Shisir Devkota
- Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
| | - Mehul Parakh
- Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
| | - Sean Johnson
- Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411, United States of America
| | - Priyanka Ramaswamy
- Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411, United States of America
| | - Michael Lowe
- Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411, United States of America
| | - Aubrey Penn
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, United States of America
- Analytical Instrumentation Facility, North Carolina State University, Raleigh, NC 27695, United States of America
| | - Lew Reynolds
- Analytical Instrumentation Facility, North Carolina State University, Raleigh, NC 27695, United States of America
| | - Shanthi Iyer
- Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
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10
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Koivusalo E, Hilska J, Galeti HVA, Galvão Gobato Y, Guina M, Hakkarainen T. The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires. NANOTECHNOLOGY 2020; 31:465601. [PMID: 32750687 DOI: 10.1088/1361-6528/abac34] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Precise control and broad tunability of the growth parameters are essential in engineering the optical and electrical properties of semiconductor nanowires (NWs) to make them suitable for practical applications. To this end, we report the effect of As species, namely As2 and As4, on the growth of self-catalyzed GaAs based NWs. The role of As species is further studied in the presence of Te as n-type dopant in GaAs NWs and Sb as an additional group V element to form GaAsSb NWs. Using As4 enhances the growth of NWs in the axial direction over a wide range of growth parameters and diminishes the tendency of Te and Sb to reduce the NW aspect ratio. By extending the axial growth parameter window, As4 allows growth of GaAsSb NWs with up to 47% in Sb composition. On the other hand, As2 favors sidewall growth which enhances the growth in the radial direction. Thus, the selection of As species is critical for tuning not only the NW dimensions, but also the incorporation mechanisms of dopants and ternary elements. Moreover, the commonly observed dependence of twinning on Te and Sb remains unaffected by the As species. By exploiting the extended growth window associated with the use of As4, enhanced Sb incorporation and optical emission up to 1400 nm wavelength range is demonstrated. This wavelength corresponds to the telecom E-band, which opens new prospects for this NW material system in future telecom applications while simultaneously enabling their integration to the silicon photonics platform.
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Affiliation(s)
- Eero Koivusalo
- Optoelectronics Research Centre, Physics Unit, Tampere University, Tampere, Finland
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11
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Recent Progress on the Gold-Free Integration of Ternary III-As Antimonide Nanowires Directly on Silicon. NANOMATERIALS 2020; 10:nano10102064. [PMID: 33086569 PMCID: PMC7603276 DOI: 10.3390/nano10102064] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/27/2020] [Revised: 09/26/2020] [Accepted: 09/27/2020] [Indexed: 01/11/2023]
Abstract
During the last few years, there has been renewed interest in the monolithic integration of gold-free, Ternary III–As Antimonide (III–As–Sb) compound semiconductor materials on complementary metal-oxide-semiconductor (CMOS)—compatible silicon substrate to exploit its scalability, and relative abundance in high-performance and cost-effective integrated circuits based on the well-established technology. Ternary III–As–Sb nanowires (NWs) hold enormous promise for the fabrication of high-performance optoelectronic nanodevices with tunable bandgap. However, the direct epitaxial growth of gold-free ternary III–As–Sb NWs on silicon is extremely challenging, due to the surfactant effect of Sb. This review highlights the recent progress towards the monolithic integration of III–As–Sb NWs on Si. First, a comprehensive and in-depth review of recent progress made in the gold-free growth of III–As–Sb NWs directly on Si is explicated, followed by a detailed description of the root cause of Sb surfactant effect and its influence on the morphology and structural properties of Au-free ternary III–As–Sb NWs. Then, the various strategies that have been successfully deployed for mitigating the Sb surfactant effect for enhanced Sb incorporation are highlighted. Finally, recent advances made in the development of CMOS compatible, Ternary III–As–Sb NWs based, high-performance optoelectronic devices are elucidated.
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12
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Jansson M, Francaviglia L, La R, Balagula R, Stehr JE, Tu CW, Fontcuberta I Morral A, Chen WM, Buyanova IA. Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence. NANOTECHNOLOGY 2019; 30:405703. [PMID: 31242464 DOI: 10.1088/1361-6528/ab2cdb] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Cathodoluminescence (CL) and micro-photoluminescence spectroscopies are employed to investigate effects of structural defects on carrier recombination in GaNAsP nanowires (NWs) grown by molecular beam epitaxy on Si substrates. In the NWs with a low N content of 0.08%, these defects are found to promote non-radiative (NR) recombination, which causes spatial variation of the CL peak position and its intensity. Unexpectedly, these detrimental effects can be suppressed even by a small increase in the nitrogen composition from 0.08% to 0.12%. This is attributed to more efficient trapping of excited carriers/excitons to the localized states promoted by N-induced localization and also the presence of other NR channels. At room temperature, the structural defects no longer dominate in carrier recombination even in the NWs with the lower nitrogen content, likely due to increasing importance of other recombination channels. Our work underlines the need in eliminating important thermally activated NR defects, other than the structural defects, for future optoelectronic applications of these NWs.
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Affiliation(s)
- Mattias Jansson
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
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13
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Barrigón E, Heurlin M, Bi Z, Monemar B, Samuelson L. Synthesis and Applications of III-V Nanowires. Chem Rev 2019; 119:9170-9220. [PMID: 31385696 DOI: 10.1021/acs.chemrev.9b00075] [Citation(s) in RCA: 79] [Impact Index Per Article: 15.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.
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Affiliation(s)
- Enrique Barrigón
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Magnus Heurlin
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden.,Sol Voltaics AB , Scheelevägen 63 , 223 63 Lund , Sweden
| | - Zhaoxia Bi
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Bo Monemar
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Lars Samuelson
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
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14
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Abstract
Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.
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Affiliation(s)
- Chuancheng Jia
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Zhaoyang Lin
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Yu Huang
- Department of Materials Science and Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
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15
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de Lépinau R, Scaccabarozzi A, Patriarche G, Travers L, Collin S, Cattoni A, Oehler F. Evidence and control of unintentional As-rich shells in GaAs 1-x P x nanowires. NANOTECHNOLOGY 2019; 30:294003. [PMID: 31032812 DOI: 10.1088/1361-6528/ab14c1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We report on the detailed composition of ternary GaAsP nanowires (NWs) grown using self-catalyzed vapor-liquid-solid (VLS) growth by molecular beam epitaxy. We evidence the formation of an unintentional shell, which enlarges by vapor-solid growth concurrently to the main VLS-grown core. The NW core and unintentional shell have typically different chemical compositions if no effort is made to adjust the growth conditions. The compositions can be made equal by changing the substrate temperature and the P/As flux ratio in the vapor phase. In all cases, we still observe the existence of a P-rich interface between the GaAsP NW core and the unintentional shell, even if favorable growth conditions are used.
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Affiliation(s)
- Romaric de Lépinau
- IPVF, Institut Photovoltaïque d'Île-de-France, F-91120 Palaiseau, France. C2N, Centre de Nanosciences et de Nanotechnologies, UMR 9001 CNRS, Univ. Paris Sud, Univ. Paris-Saclay, F-91120 Palaiseau, France
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16
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Ren D, Ahtapodov L, van Helvoort ATJ, Weman H, Fimland BO. Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications. NANOTECHNOLOGY 2019; 30:294001. [PMID: 30917343 DOI: 10.1088/1361-6528/ab13ed] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Epitaxially grown ternary III-arsenide-antimonide (III-As-Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based heterostructures while preserving the high crystal quality. This and the inherent bandgap tuning flexibility of III-As-Sb in the near- and mid-infrared wavelength regions are important and auspicious premises for a variety of optoelectronic applications. In this review, we summarize the current understanding of the nucleation, morphology-change and crystal phase evolution of GaAsSb and InAsSb NWs and their characterization, especially in relation to Sb incorporation during growth. By linking these findings to the optical properties in such ternary NWs and their heterostructures, a brief account of the ongoing development of III-As-Sb NW-based photodetectors and light emitters is also given.
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Affiliation(s)
- Dingding Ren
- Department of Electronic Systems, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
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17
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Gao Z, Sun J, Han M, Yin Y, Gu Y, Yang ZX, Zeng H. Recent advances in Sb-based III-V nanowires. NANOTECHNOLOGY 2019; 30:212002. [PMID: 30708362 DOI: 10.1088/1361-6528/ab03ee] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sb-based III-V nanowires (NWs) attracted significant interests in high speed electronics, long-wavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effect-transistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.
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Affiliation(s)
- Zhaofeng Gao
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China. School of Microelectronics, Shandong University, Jinan, 250100, People's Republic of China
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18
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Yip S, Shen L, Ho JC. Recent advances in III-Sb nanowires: from synthesis to applications. NANOTECHNOLOGY 2019; 30:202003. [PMID: 30625448 DOI: 10.1088/1361-6528/aafcce] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The excellent properties of III-V semiconductors make them intriguing candidates for next-generation electronics and optoelectronics. Their nanowire (NW) counterparts further provide interesting geometry and a quantum confinement effect which benefits various applications. Among the many members of all the III-V semiconductors, III-antimonide NWs have attracted significant research interest due to their narrow, direct bandgap and high carrier mobility. However, due to the difficulty of NW fabrication, the development of III-antimonide NWs and their corresponding applications are always a step behind the other III-V semiconductors. Until recent years, because of advances in understanding and fabrication techniques, electronic and optoelectronic devices based on III-antimonide NWs with novel performance have been fabricated. In this review, we will focus on the development of the synthesis of III-antimonide NWs using different techniques and strategies for fine-tuning the crystal structure and composition as well as fabricating their corresponding heterostructures. With such development, the recent progress in the applications of III-antimonide NWs in electronics and optoelectronics is also surveyed. All these discussions provide valuable guidelines for the design of III-antimonide NWs for next-generation device utilization.
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Affiliation(s)
- SenPo Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong Special Administrative Region of China, People's Republic of China. Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, People's Republic of China
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19
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Li D, Lan C, Manikandan A, Yip S, Zhou Z, Liang X, Shu L, Chueh YL, Han N, Ho JC. Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires. Nat Commun 2019; 10:1664. [PMID: 30971702 PMCID: PMC6458123 DOI: 10.1038/s41467-019-09606-y] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/16/2018] [Accepted: 03/19/2019] [Indexed: 11/16/2022] Open
Abstract
Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InxGa1−xSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric InxGa1−xSb (0.09 < x < 0.28) NWs on amorphous substrates with the uniform phase-purity and <110 >-orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm2 V−1 s−1 for In0.09Ga0.91Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In0.28Ga0.72Sb NW device yields efficient rise and decay times down to 38 and 53 μs, respectively, along with the responsivity of 6000 A W−1 and external quantum efficiency of 4.8 × 106 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors. The application of ternary nanowires (NWs) in optoelectronics has been hindered by difficulties in producing high quality NWs on silicon substrates. Here, the authors report on InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity, and fast response times in the infrared regime.
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Affiliation(s)
- Dapan Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China
| | - Changyong Lan
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 610054, Chengdu, P.R. China
| | - Arumugam Manikandan
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - SenPo Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China.,State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Ziyao Zhou
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China
| | - Xiaoguang Liang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China
| | - Lei Shu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Ning Han
- State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, 100190, Beijing, P. R. China.
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR. .,Shenzhen Research Institute, City University of Hong Kong, 518057, Shenzhen, P.R. China. .,State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
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20
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Zhou C, Zhang XT, Zheng K, Chen PP, Matsumura S, Lu W, Zou J. Epitaxial GaAs/AlGaAs core-multishell nanowires with enhanced photoluminescence lifetime. NANOSCALE 2019; 11:6859-6865. [PMID: 30912781 DOI: 10.1039/c9nr01715a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The modulation of complex GaAs/AlGaAs core-shell nanowire heterostructures by the process of embedding GaAs quantum wells or AlGaAs quantum dots is feasible due to their minor lattice mismatch. In this study, we have grown GaAs/AlGaAs core-multishell nanowire heterostructures by molecular beam epitaxy and investigated their structural and optical characteristics. Our advanced electron microscopy investigations confirmed that we have grown wurtzite-structured GaAs/AlGaAs core-multishell nanowires, in which the AlGaAs inner-shell with a high Al concentration acts as a quantum barrier for the GaAs nanowire core and AlGaAs outer-shell. Photoluminescence measurements show that this unique nanowire heterostructure has a significantly increased carrier lifetime compared to the conventional GaAs/AlGaAs core-shell nanowire heterostructures. The observed prolonged carrier lifetime can be attributed to the increased electron confinement at the core-inner-shell interface and thus the delayed recombination of photoexcited electron-hole pairs. This study provides a possible design of nanowire heterostructures for high-efficiency optoelectronic devices.
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Affiliation(s)
- Chen Zhou
- Materials Engineering, The University of Queensland, Brisbane, Queensland 4072, Australia
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21
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Sharma M, Ahmad E, Dev D, Li J, Reynolds CL, Liu Y, Iyer S. Improved performance of GaAsSb/AlGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing. NANOTECHNOLOGY 2019; 30:034005. [PMID: 30212376 DOI: 10.1088/1361-6528/aae148] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
In this work, we report on the p-i GaAsSb/AlGaAs nanowires (NWs) ensemble device exhibiting good spectral response up to 1.1 μm with a high responsivity of 311 A W-1, an external quantum efficiency of 6.1 × 104%, and a detectivity of 1.9 × 1010 Jones at 633 nm. The high responsivity of the NWs has been attributed to in situ post-growth annealing of GaAsSb axial NWs in the ultra-high vacuum. The enabling growth technology is molecular beam epitaxy for the Ga-assisted epitaxial growth of these NWs on Si (111) substrates. Room temperature Raman spectra, as well as temperature dependent micro-photoluminescence peak analysis indicated suppression of band tail states and non-radiative channels due to annealing. A similar improvement in in situ annealed p-i GaAsSb NW ensemble with an AlGaAs passivating shell was inferred from a reduction in the Schottky barrier height as well as the NW resistance compared to the as-grown NW ensemble. These results demonstrate in situ annealing of nanowires to be an effective pathway for improving the optoelectronic properties of the NWs and the device thereof.
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Affiliation(s)
- Manish Sharma
- Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
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22
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Boland JL, Amaduzzi F, Sterzl S, Potts H, Herz LM, Fontcuberta I Morral A, Johnston MB. High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires. NANO LETTERS 2018; 18:3703-3710. [PMID: 29717874 DOI: 10.1021/acs.nanolett.8b00842] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V-1 s-1 at 10 K.
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Affiliation(s)
- Jessica L Boland
- Department of Physics , University of Oxford, Clarendon Laboratory , Parks Road , Oxford OX1 3PU , United Kingdom
| | - Francesca Amaduzzi
- Laboratory of Semiconductor Materials , École Polytechnique Fédérale de Lausanne (EPFL) , CH-1015 Lausanne , Switzerland
| | - Sabrina Sterzl
- Department of Physics , University of Oxford, Clarendon Laboratory , Parks Road , Oxford OX1 3PU , United Kingdom
| | - Heidi Potts
- Laboratory of Semiconductor Materials , École Polytechnique Fédérale de Lausanne (EPFL) , CH-1015 Lausanne , Switzerland
| | - Laura M Herz
- Department of Physics , University of Oxford, Clarendon Laboratory , Parks Road , Oxford OX1 3PU , United Kingdom
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials , École Polytechnique Fédérale de Lausanne (EPFL) , CH-1015 Lausanne , Switzerland
| | - Michael B Johnston
- Department of Physics , University of Oxford, Clarendon Laboratory , Parks Road , Oxford OX1 3PU , United Kingdom
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23
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Gazibegovic S, Car D, Zhang H, Balk SC, Logan JA, de Moor MWA, Cassidy MC, Schmits R, Xu D, Wang G, Krogstrup P, Op Het Veld RLM, Zuo K, Vos Y, Shen J, Bouman D, Shojaei B, Pennachio D, Lee JS, van Veldhoven PJ, Koelling S, Verheijen MA, Kouwenhoven LP, Palmstrøm CJ, Bakkers EPAM. Epitaxy of advanced nanowire quantum devices. Nature 2018; 548:434-438. [PMID: 28836603 DOI: 10.1038/nature23468] [Citation(s) in RCA: 103] [Impact Index Per Article: 17.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/08/2017] [Accepted: 06/23/2017] [Indexed: 12/24/2022]
Abstract
Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons-which are key elements of topological quantum computing-fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire 'hashtags' reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.
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Affiliation(s)
- Sasa Gazibegovic
- QuTech and Kavli Institute of NanoScience, Delft University of Technology, 2600 GA Delft, The Netherlands.,Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Diana Car
- QuTech and Kavli Institute of NanoScience, Delft University of Technology, 2600 GA Delft, The Netherlands.,Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Hao Zhang
- QuTech and Kavli Institute of NanoScience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Stijn C Balk
- QuTech and Kavli Institute of NanoScience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - John A Logan
- Materials Department, University of California, Santa Barbara, California 93106, USA
| | - Michiel W A de Moor
- QuTech and Kavli Institute of NanoScience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Maja C Cassidy
- QuTech and Kavli Institute of NanoScience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Rudi Schmits
- TNO Technical Sciences, Nano-Instrumentation Department, 2600 AD Delft, The Netherlands
| | - Di Xu
- QuTech and Kavli Institute of NanoScience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Guanzhong Wang
- QuTech and Kavli Institute of NanoScience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Peter Krogstrup
- Center for Quantum Devices and Station-Q Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Roy L M Op Het Veld
- QuTech and Kavli Institute of NanoScience, Delft University of Technology, 2600 GA Delft, The Netherlands.,Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Kun Zuo
- QuTech and Kavli Institute of NanoScience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Yoram Vos
- QuTech and Kavli Institute of NanoScience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Jie Shen
- QuTech and Kavli Institute of NanoScience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Daniël Bouman
- QuTech and Kavli Institute of NanoScience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Borzoyeh Shojaei
- Materials Department, University of California, Santa Barbara, California 93106, USA
| | - Daniel Pennachio
- Materials Department, University of California, Santa Barbara, California 93106, USA
| | - Joon Sue Lee
- California NanoSystems Institute, University of California, Santa Barbara, California 93106, USA
| | - Petrus J van Veldhoven
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Sebastian Koelling
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Marcel A Verheijen
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.,Philips Innovation Services Eindhoven, High Tech Campus 11, 5656 AE Eindhoven, The Netherlands
| | - Leo P Kouwenhoven
- QuTech and Kavli Institute of NanoScience, Delft University of Technology, 2600 GA Delft, The Netherlands.,Microsoft Station-Q at Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Chris J Palmstrøm
- Materials Department, University of California, Santa Barbara, California 93106, USA.,California NanoSystems Institute, University of California, Santa Barbara, California 93106, USA.,Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
| | - Erik P A M Bakkers
- QuTech and Kavli Institute of NanoScience, Delft University of Technology, 2600 GA Delft, The Netherlands.,Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
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24
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Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors. CRYSTALS 2017. [DOI: 10.3390/cryst7110337] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
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25
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Ahmad E, Karim MR, Hafiz SB, Reynolds CL, Liu Y, Iyer S. A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range. Sci Rep 2017; 7:10111. [PMID: 28860507 PMCID: PMC5579295 DOI: 10.1038/s41598-017-09280-4] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/06/2017] [Accepted: 07/18/2017] [Indexed: 11/28/2022] Open
Abstract
Self-catalyzed growth of axial GaAs1−xSbx nanowire (NW) arrays with bandgap tuning corresponding to the telecommunication wavelength of 1.3 µm poses a challenge, as the growth mechanism for axial configuration is primarily thermodynamically driven by the vapor-liquid-solid growth process. A systematic study carried out on the effects of group V/III beam equivalent (BEP) ratios and substrate temperature (Tsub) on the chemical composition in NWs and NW density revealed the efficacy of a two-step growth temperature sequence (initiating the growth at relatively higher Tsub = 620 °C and then continuing the growth at lower Tsub) as a promising approach for obtaining high-density NWs at higher Sb compositions. The dependence of the Sb composition in the NWs on the growth parameters investigated has been explained by an analytical relationship between the effective vapor composition and NW composition using relevant kinetic parameters. A two-step growth approach along with a gradual variation in Ga-BEP for offsetting the consumption of the droplets has been explored to realize long NWs with homogeneous Sb composition up to 34 at.% and photoluminescence emission reaching 1.3 µm at room temperature.
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Affiliation(s)
- Estiak Ahmad
- Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC, 27401, USA
| | - Md Rezaul Karim
- Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC, 27401, USA
| | - Shihab Bin Hafiz
- Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC, 27401, USA
| | - C Lewis Reynolds
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Yang Liu
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Shanthi Iyer
- Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC, 27401, USA. .,Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC, 27411, USA.
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26
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Tan SL, Genuist Y, den Hertog MI, Bellet-Amalric E, Mariette H, Pelekanos NT. Highly uniform zinc blende GaAs nanowires on Si(111) using a controlled chemical oxide template. NANOTECHNOLOGY 2017; 28:255602. [PMID: 28475104 DOI: 10.1088/1361-6528/aa7169] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
GaAs-based nanowires (NWs) can be grown without extrinsic catalyst using the Ga-assisted vapor-liquid-solid method in an epitaxy reactor, on Si(111) substrates covered with native oxide. Despite its wide use, the conventional method fails to provide a good control over uniformity, reproducibility, and yield of vertical NWs. The nucleation of GaAs NWs is very sensitive to the properties of the native oxide such as chemical composition, roughness and porosity. Consequently, samples grown under the same conditions on Si(111) substrates from different manufacturing batches often produce dramatically different growth results. In order to remove the dependence on wafer batch, a controlled chemical oxidation process is developed to replace the native oxide on Si(111) substrate with a reproducible chemical oxide. A high yield (exceeding 90%) of vertical GaAs NWs is achieved with excellent uniformity on chemical oxide-covered substrate. As an added advantage, the crystalline quality is significantly improved over that of GaAs NWs grown on native oxide-covered substrate, and pure zinc blende crystal structure can be achieved with minimal defects. In addition, the chemical oxide can be used as a template for producing different combinations of NW densities and sizes in parallel on the same wafer using the same growth conditions.
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Affiliation(s)
- Siew Li Tan
- Université Grenoble Alpes, F-38000 Grenoble, France. CEA, INAC, 'Nanophysique et Semiconducteurs' group, 17 rue des Martyrs, F-38054 Grenoble cedex 9, France
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27
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Namazi L, Ghalamestani SG, Lehmann S, Zamani RR, Dick KA. Direct nucleation, morphology and compositional tuning of InAs 1-x Sb x nanowires on InAs (111) B substrates. NANOTECHNOLOGY 2017; 28:165601. [PMID: 28346221 DOI: 10.1088/1361-6528/aa6518] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
III-V ternary nanowires are interesting due to the possibility of modulating their physical and material properties by tuning their material composition. Amongst them InAs1-x Sb x nanowires are good candidates for applications such as Infrared detectors. However, this material has not been grown directly from substrates, in a large range of material compositions. Since the properties of ternaries are alterable by tuning their composition, it is beneficial to gain access to a wide range of composition tunability. Here we demonstrate direct nucleation and growth of InAs1-x Sb x nanowires from Au seed particles over a broad range of compositions (x = 0.08-0.75) for different diameters and surface densities by means of metalorganic vapor phase epitaxy. We investigate how the nucleation, morphology, solid phase Sb content, and growth rate of these nanowires depend on the particle dimensions, and on growth conditions such as the vapor phase composition, V/III ratio, and temperature. We show that the solid phase Sb content of the nanowires remains invariant towards changes of the In precursor flow. We also discuss that at relatively high In flows the growth mechanism alters from Au-seeded to what is referred to as semi In-seeded growth. This change enables growth of nanowires with a high solid phase Sb content of 0.75 that are not feasible via Au-seeded growth. Independent of the growth conditions and morphology, we report that the nanowire Sb content changes over their length, from lower Sb contents at the base, increasing to higher amounts towards the tip. We correlate the axial Sb content variations to the axial growth rate measured in situ. We also report spontaneous core-shell formation for Au-seeded nanowires, where the core is Sb-rich in comparison to the Sb-poor shell.
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Affiliation(s)
- Luna Namazi
- Solid State Physics, Lund University, Box 118, SE-221 00 Lund, Sweden
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28
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Borg M, Schmid H, Gooth J, Rossell MD, Cutaia D, Knoedler M, Bologna N, Wirths S, Moselund KE, Riel H. High-Mobility GaSb Nanostructures Cointegrated with InAs on Si. ACS NANO 2017; 11:2554-2560. [PMID: 28225591 DOI: 10.1021/acsnano.6b04541] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
GaSb nanostructures integrated on Si substrates are of high interest for p-type transistors and mid-IR photodetectors. Here, we investigate the metalorganic chemical vapor deposition and properties of GaSb nanostructures monolithically integrated onto silicon-on-insulator wafers using template-assisted selective epitaxy. A high degree of morphological control allows for GaSb nanostructures with critical dimensions down to 20 nm. Detailed investigation of growth parameters reveals that the GaSb growth rate is governed by the desorption processes of an Sb surface layer and, in turn, is insensitive to changes in material transport efficiency. The GaSb crystal structure is typically zinc-blende with a low density of rotational twin defects, and even occasional twin-free structures are observed. Hall/van der Pauw measurements are conducted on 20 nm-thick GaSb nanostructures, revealing high hole mobility of 760 cm2/(V s), which matches literature values for high-quality bulk GaSb crystals. Finally, we demonstrate a process that enables cointegration of GaSb and InAs nanostructures in close vicinity on Si, a preferred material combination ideally suited for high-performance complementary III-V metal-oxide-semiconductor technology.
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Affiliation(s)
- Mattias Borg
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Heinz Schmid
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Johannes Gooth
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Marta D Rossell
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
- Electron Microscopy Center, EMPA, Swiss Federal Laboratories for Materials Science and Technology , Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Davide Cutaia
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Moritz Knoedler
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Nicolas Bologna
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
- Electron Microscopy Center, EMPA, Swiss Federal Laboratories for Materials Science and Technology , Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Stephan Wirths
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | | | - Heike Riel
- IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland
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29
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Li L, Pan D, Xue Y, Wang X, Lin M, Su D, Zhang Q, Yu X, So H, Wei D, Sun B, Tan P, Pan A, Zhao J. Near Full-Composition-Range High-Quality GaAs 1-xSb x Nanowires Grown by Molecular-Beam Epitaxy. NANO LETTERS 2017; 17:622-630. [PMID: 28103038 DOI: 10.1021/acs.nanolett.6b03326] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-tunable GaAs1-xSbx nanowires by molecular-beam epitaxy. GaAs1-xSbx nanowires with different Sb content are systematically grown by tuning the Sb and As fluxes, and the As background. We find that GaAs1-xSbx nanowires with low Sb content can be grown directly on Si(111) substrates (0 ≤ x ≤ 0.60) and GaAs nanowire stems (0 ≤ x ≤ 0.50) by tuning the Sb and As fluxes. To obtain GaAs1-xSbx nanowires with x ranging from 0.60 to 0.93, we grow the GaAs1-xSbx nanowires on GaAs nanowire stems by tuning the As background. Photoluminescence measurements confirm that the emission wavelength of the GaAs1-xSbx nanowires is tunable from 844 nm (GaAs) to 1760 nm (GaAs0.07Sb0.93). High-resolution transmission electron microscopy images show that the grown GaAs1-xSbx nanowires have pure zinc-blende crystal structure. Room-temperature Raman spectra reveal a redshift of the optical phonons in the GaAs1-xSbx nanowires with x increasing from 0 to 0.93. Field-effect transistors based on individual GaAs1-xSbx nanowires are fabricated, and rectifying behavior is observed in devices with low Sb content, which disappears in devices with high Sb content. The successful growth of high-quality GaAs1-xSbx nanowires with near full-range bandgap tuning may speed up the development of high-performance nanowire devices based on such ternaries.
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Affiliation(s)
- Lixia Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Yongzhou Xue
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Xiaolei Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Miaoling Lin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Dan Su
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Qinglin Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Microelectronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University , Changsha 410082, China
| | - Xuezhe Yu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Hyok So
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Dahai Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Baoquan Sun
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Pingheng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Microelectronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University , Changsha 410082, China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
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30
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Potts H, Morgan NP, Tütüncüoglu G, Friedl M, Morral AFI. Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets. NANOTECHNOLOGY 2017; 28:054001. [PMID: 28008881 DOI: 10.1088/1361-6528/28/5/054001] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been highly debated in the last few years. Here, we report on the use of indium droplets to tune the growth direction of self-catalyzed InAs nanowires. The indium droplets are formed in situ on InAs(Sb) stems. Their position is modified to promote growth in the 〈11-2〉 or equivalent directions. We also show that indium droplets can be used for the fabrication of InSb insertions in InAsSb nanowires. Our results demonstrate that indium droplets can initiate growth of InAs nanostructures as well as provide added flexibility to nanowire growth, enabling the formation of kinks and heterostructures, and offer a new approach in the growth of defect-free crystals.
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Affiliation(s)
- Heidi Potts
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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31
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Park JH, Pozuelo M, Setiawan BPD, Chung CH. Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition. NANOSCALE RESEARCH LETTERS 2016; 11:208. [PMID: 27094822 PMCID: PMC4837196 DOI: 10.1186/s11671-016-1427-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/28/2016] [Accepted: 04/13/2016] [Indexed: 06/05/2023]
Abstract
We report the growth of vertical <111>-oriented InAs x P1-x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown nanowire growth morphologies, crystallinity, composition, and optical characteristics are determined using a combination of scanning and transmission electron microscopies, electron diffraction, and X-ray photoelectron, energy dispersive X-ray, and Raman spectroscopies. We find that the InAs x P1-x nanowires are tapered with narrow tops, wider bases, and In-rich In-As alloy tips, characteristic of vapor-liquid-solid process. The wires exhibit a mixture of zinc blende and wurtzite crystal structures and a high density of structural defects such as stacking faults and twins. Our results suggest that the incorporation of As into InP wires decreases with increasing substrate temperature. The Raman spectra obtained from the In(As)P nanowires reveal a red-shift and lower intensity of longitudinal optical mode relative to both InP nanowires and InP(111)B bulk, due to the incorporation of As into the InP matrix.
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Affiliation(s)
- Jeung Hun Park
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California, 90095, USA.
- Present address: IBM T.J. Watson Research Center, Yorktown Heights, New York, 10598, USA.
| | - Marta Pozuelo
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California, 90095, USA
| | - Bunga P D Setiawan
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California, 90095, USA
| | - Choong-Heui Chung
- Department of Materials Science and Engineering, Hanbat National University, Daejeon, 305-719, Republic of Korea.
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32
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Shafa M, Akbar S, Gao L, Fakhar-E-Alam M, Wang ZM. Indium Antimonide Nanowires: Synthesis and Properties. NANOSCALE RESEARCH LETTERS 2016; 11:164. [PMID: 27009531 PMCID: PMC4805681 DOI: 10.1186/s11671-016-1370-4] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2016] [Accepted: 03/12/2016] [Indexed: 06/01/2023]
Abstract
This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is vapor phase deposition of NWs by manifold techniques. In addition, author review various protocols and methodologies employed to generate NWs from diverse material systems via self-organized fabrication procedures comprising chemical vapor deposition, annealing in reactive atmosphere, evaporation of InSb, molecular/ chemical beam epitaxy, solution-based techniques, and top-down fabrication method. The benefits and ill effects of the gold and self-catalyzed materials for the growth of NWs are explained at length. Afterward, in the next part, four thermodynamic characteristics of NW growth criterion concerning the expansion of NWs, growth velocity, Gibbs-Thomson effect, and growth model were expounded and discussed concisely. Recent progress in device fabrications is explained in the third part, in which the electrical and optical properties of InSb NWs were reviewed by considering the effects of conductivity which are diameter dependent and the applications of NWs in the fabrications of field-effect transistors, quantum devices, thermoelectrics, and detectors.
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Affiliation(s)
- Muhammad Shafa
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
| | - Sadaf Akbar
- Zernike Institute for Advanced Materials, University of Groningen, 9747AG, Groningen, The Netherlands
| | - Lei Gao
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Muhammad Fakhar-E-Alam
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China
| | - Zhiming M Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, China.
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33
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Huh J, Kim DC, Munshi AM, Dheeraj DL, Jang D, Kim GT, Fimland BO, Weman H. Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients. NANOTECHNOLOGY 2016; 27:385703. [PMID: 27528601 DOI: 10.1088/0957-4484/27/38/385703] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Due to bandgap tunability, GaAsSb nanowires (NWs) have received a great deal of attention for a variety of optoelectronic device applications. However, electrical and optical properties of GaAsSb are strongly affected by Sb-related defects and scattering from surface states and/or defects, which can limit the performance of GaAsSb NW devices. Thus, in order to utilize the GaAsSb NWs for high performance electronic and optoelectronic devices, it is required to study the material and interface properties (e.g. the interface trap density) in the GaAsSb NW devices. Here, we investigate the low frequency noise in single GaAsSb NWs with self-induced compositional gradients. The current noise spectral density of the GaAsSb NW device showed a typical 1/f noise behavior. The Hooge's noise parameter and the interface trap density of the GaAsSb NW device were found to be ∼2.2 × 10(-2) and ∼2 × 10(12) eV(-1) cm(-2), respectively. By applying low frequency noise measurements, the noise equivalent power, a key figure of merit of photodetectors, was calculated. The observed low frequency noise properties can be useful as guidance for quality and reliability of GaAsSb NW based electronic devices, especially for photodetectors.
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Affiliation(s)
- Junghwan Huh
- Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
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34
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Yu X, Li L, Wang H, Xiao J, Shen C, Pan D, Zhao J. Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy. NANOSCALE 2016; 8:10615-10621. [PMID: 27194599 DOI: 10.1039/c5nr07830j] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
For the epitaxial growth of Ga-based III-V semiconductor nanowires (NWs) on Si, Ga droplets could provide a clean and compatible solution in contrast to the common Au catalyst. However, the use of Ga droplets is rather limited except for that in Ga-catalyzed GaAs NW studies in a relatively narrow growth temperature (Ts) window around 620 °C on Si. In this paper, we have investigated the two-step growth of Ga-catalyzed III-V NWs on Si (111) substrates by molecular-beam epitaxy. First, by optimizing the surface oxide, vertically aligned GaAs NWs with a high yield are obtained at Ts = 620 °C. Then a two-temperature procedure is adopted to preserve Ga droplets at lower Ts, which leads to an extension of Ts down to 500 °C for GaAs NWs. Based on this procedure, systematic morphological and structural studies for Ga-catalyzed GaAs NWs in the largest Ts range could be presented. Then within the same growth scheme, for the first time, we demonstrate Ga-catalyzed GaAs/GaSb heterostructure NWs. These GaSb NWs are axially grown on the GaAs NW sections and are pure zinc-blende single crystals. Compositional measurements confirm that the catalyst particles indeed mainly consist of Ga and GaSb sections are of high purity but with a minor composition of As. In the end, we present GaAsSb NW growth with a tunable Sb composition. Our results provide useful information for the controllable synthesis of multi-compositional Ga-catalyzed III-V semiconductor NWs on Si for heterogeneous integration.
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Affiliation(s)
- Xuezhe Yu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
| | - Lixia Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
| | - Hailong Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
| | - Jiaxing Xiao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
| | - Chao Shen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
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35
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Du W, Yang X, Pan H, Ji X, Ji H, Luo S, Zhang X, Wang Z, Yang T. Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts. NANO LETTERS 2016; 16:877-882. [PMID: 26789719 DOI: 10.1021/acs.nanolett.5b03587] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed ⟨110⟩ directions on an [100]-oriented substrate, two ⟨100⟩ directions plus four ⟨111⟩ directions on an [110]-oriented substrate, and six equivalent ⟨112⟩ directions on an [111]-oriented substrate, which correspond to the projections of ⟨111⟩ family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p-n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III-V nanodevices.
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Affiliation(s)
- Wenna Du
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, People's Republic of China
| | - Xiaoguang Yang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, People's Republic of China
| | - Huayong Pan
- Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University , Beijing 100871, People's Republic of China
| | - Xianghai Ji
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, People's Republic of China
| | - Haiming Ji
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, People's Republic of China
| | - Shuai Luo
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, People's Republic of China
| | - Xingwang Zhang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, People's Republic of China
| | - Zhanguo Wang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, People's Republic of China
| | - Tao Yang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, People's Republic of China
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36
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Ren D, Dheeraj DL, Jin C, Nilsen JS, Huh J, Reinertsen JF, Munshi AM, Gustafsson A, van Helvoort ATJ, Weman H, Fimland BO. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays. NANO LETTERS 2016; 16:1201-1209. [PMID: 26726825 DOI: 10.1021/acs.nanolett.5b04503] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternary III-V(1-y)Vy nanowires and hinders the development of high-performance nanowire devices based on such ternaries. Here, we report on the origins of Sb-induced effects affecting the morphology and crystal structure of self-catalyzed GaAsSb nanowire arrays. The nanowire growth by molecular beam epitaxy is changed both kinetically and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses and the crystal phase evolution mechanism proposed in this Letter, the phase transition/stability in catalyst-assisted ternary III-V-V nanowire growth can be well explained. Wavelength tunability with good homogeneity of the optical emission from the self-catalyzed GaAsSb nanowire arrays with high crystal phase purity is demonstrated by only adjusting the Sb2 flux.
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Affiliation(s)
| | - Dasa L Dheeraj
- CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim, Norway
| | - Chengjun Jin
- Center for Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark , DK-2800 Kongens Lyngby, Denmark
| | | | | | | | - A Mazid Munshi
- CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim, Norway
| | - Anders Gustafsson
- Solid State Physics and NanoLund, Lund University , Box 118, SE-22100 Lund, Sweden
| | | | - Helge Weman
- CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim, Norway
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37
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Potts H, Friedl M, Amaduzzi F, Tang K, Tütüncüoglu G, Matteini F, Alarcon Lladó E, McIntyre PC, Fontcuberta i Morral A. From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires. NANO LETTERS 2016; 16:637-643. [PMID: 26686394 DOI: 10.1021/acs.nanolett.5b04367] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as InAs and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, and composition are key to the control of their physical properties. In this work, we present how to grow catalyst-free InAs1-xSbx nanowires, which are stacking fault and twin defect-free over several hundreds of nanometers. We evaluate the impact of their crystal phase purity by probing their electrical properties in a transistor-like configuration and by measuring the phonon-plasmon interaction by Raman spectroscopy. We also highlight the importance of high-quality dielectric coating for the reduction of hysteresis in the electrical characteristics of the nanowire transistors. High channel carrier mobilities and reduced hysteresis open the path for high-frequency devices fabricated using InAs1-xSbx nanowires.
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Affiliation(s)
- Heidi Potts
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - Martin Friedl
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - Francesca Amaduzzi
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - Kechao Tang
- Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States
| | - Gözde Tütüncüoglu
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - Federico Matteini
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - Esther Alarcon Lladó
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - Paul C McIntyre
- Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States
| | - Anna Fontcuberta i Morral
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
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38
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A low cost, green method to synthesize GaN nanowires. Sci Rep 2015; 5:17692. [PMID: 26643613 PMCID: PMC4672344 DOI: 10.1038/srep17692] [Citation(s) in RCA: 31] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/27/2015] [Accepted: 11/04/2015] [Indexed: 11/09/2022] Open
Abstract
The synthesis of gallium nitride nanowires (GaN NWs) by plasma enhanced chemical vapor deposition (PECVD) are successfully demonstrated in this work. The simple and green synthesis route is to introduce gallium oxide (Ga2O3) and nitrogen (N2) for the growth of nanowires. The prepared GaN nanowires have a single crystalline wurtzite structure, which the length of some nanowires is up to 20 μm, with a maximum diameter about 140 nm. The morphology and quantity of the nanowires can be modulated by the growth substrate and process parameters. In addition, the photoluminescence and field emission properties of the prepared GaN nanowires have been investigated, which were found to be largely affected by their structures. This work renders an environmentally benign strategy and a facile approach for controllable structures on nanodevice.
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39
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Li Z, Yuan X, Fu L, Peng K, Wang F, Fu X, Caroff P, White TP, Hoe Tan H, Jagadish C. Room temperature GaAsSb single nanowire infrared photodetectors. NANOTECHNOLOGY 2015; 26:445202. [PMID: 26451616 DOI: 10.1088/0957-4484/26/44/445202] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetection. Here we demonstrate room temperature operation of GaAs0.56Sb0.44 NW infrared photodetectors grown by metal organic vapor phase epitaxy. These GaAs0.56Sb0.44 NWs have uniform axial composition and show p-type conductivity with a peak field-effect mobility of ∼12 cm(2) V(-1) s(-1)). Under light illumination, single GaAs0.56Sb0.44 NW photodetectors exhibited typical photoconductor behavior with an increased photocurrent observed with the increase of temperature owing to thermal activation of carrier trap states. A broadband infrared photoresponse with a long wavelength cutoff at ∼1.66 μm was obtained at room temperature. At a low operating bias voltage of 0.15 V a responsivity of 2.37 (1.44) A/W with corresponding detectivity of 1.08 × 10(9) (6.55 × 10(8)) cm√Hz/W were achieved at the wavelength of 1.3 (1.55) μm, indicating that ternary GaAs0.56Sb0.44 NWs are promising photodetector candidates for small footprint integrated optical telecommunication systems.
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Affiliation(s)
- Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia
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40
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Yuan X, Caroff P, Wong-Leung J, Fu L, Tan HH, Jagadish C. Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:6096-6103. [PMID: 26378989 DOI: 10.1002/adma.201503540] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2015] [Revised: 08/18/2015] [Indexed: 06/05/2023]
Abstract
Controllable axial switching of polarity in GaAs nanowires with minimal tapering and perfect twin-free ZB structure based on the fundamental understanding of nanowire growth and kinking mechanism is presented. The polarity of the bottom segment is confirmed to be (111)A by atomically resolved scanning transmission electron microscopy.
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Affiliation(s)
- Xiaoming Yuan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia
| | - Philippe Caroff
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia
| | - Jennifer Wong-Leung
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia
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41
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Farrell AC, Lee WJ, Senanayake P, Haddad MA, Prikhodko SV, Huffaker DL. High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal-Organic Chemical Vapor Deposition. NANO LETTERS 2015; 15:6614-6619. [PMID: 26422559 DOI: 10.1021/acs.nanolett.5b02389] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report on the first demonstration of InAs1-xSbx nanowires grown by catalyst-free selective-area metal-organic chemical vapor deposition (SA-MOCVD). Antimony composition as high as 15 % is achieved, with strong photoluminescence at all compositions. The quality of the material is assessed by comparing the photoluminescence (PL) peak full-width at half-max (fwhm) of the nanowires to that of epitaxially grown InAsSb thin films on InAs. We find that the fwhm of the nanowires is only a few meV broader than epitaxial films, and a similar trend of relatively constant fwhm for increasing antimony composition is observed. Furthermore, the PL peak energy shows a strong dependence on temperature, suggesting wave-vector conserving transitions are responsible for the observed PL in spite of lattice mismatched growth on InAs substrate. This study shows that high-quality InAsSb nanowires can be grown by SA-MOCVD on lattice mismatched substrate, resulting in material suitable for infrared detectors and high-performance nanoelectronic devices.
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Affiliation(s)
- Alan C Farrell
- Electrical Engineering Department, ‡Materials Science Department, and §California NanoSystems Institute, University of California at Los Angeles , Los Angeles, California 90095, United States
| | - Wook-Jae Lee
- Electrical Engineering Department, ‡Materials Science Department, and §California NanoSystems Institute, University of California at Los Angeles , Los Angeles, California 90095, United States
| | - Pradeep Senanayake
- Electrical Engineering Department, ‡Materials Science Department, and §California NanoSystems Institute, University of California at Los Angeles , Los Angeles, California 90095, United States
| | - Michael A Haddad
- Electrical Engineering Department, ‡Materials Science Department, and §California NanoSystems Institute, University of California at Los Angeles , Los Angeles, California 90095, United States
| | - Sergey V Prikhodko
- Electrical Engineering Department, ‡Materials Science Department, and §California NanoSystems Institute, University of California at Los Angeles , Los Angeles, California 90095, United States
| | - Diana L Huffaker
- Electrical Engineering Department, ‡Materials Science Department, and §California NanoSystems Institute, University of California at Los Angeles , Los Angeles, California 90095, United States
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42
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Dubrovskii VG, Xu T, Álvarez AD, Plissard SR, Caroff P, Glas F, Grandidier B. Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires. NANO LETTERS 2015; 15:5580-4. [PMID: 26189571 DOI: 10.1021/acs.nanolett.5b02226] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga droplets. Considering that the droplet serves as a nonequilibrium reservoir of a group III metal, we develop a model that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III-V nanowires. This effect leads to arrays of nanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.
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Affiliation(s)
- V G Dubrovskii
- †St. Petersburg Academic University, Khlopina 8/3, 194021, St. Petersburg, Russia
- ‡Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St. Petersburg, Russia
- §ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
| | - T Xu
- ∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France
- ⊥Sino-European School of Technology, Shanghai University, 99 Shangda Road, Shanghai, 200444, People's Republic of China
| | - A Díaz Álvarez
- ∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France
| | - S R Plissard
- ∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France
- #CNRS-Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), Université de Toulouse, 7 avenue du colonel Roche, 31400 Toulouse, France
| | - P Caroff
- ∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France
- ∇Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia
| | - F Glas
- ○CNRS-Laboratoire de Photonique et de Nanostructures (LPN), Route de Nozay, 91460 Marcoussis, France
| | - B Grandidier
- ∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France
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43
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Huh J, Yun H, Kim DC, Munshi AM, Dheeraj DL, Kauko H, van Helvoort ATJ, Lee S, Fimland BO, Weman H. Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients. NANO LETTERS 2015; 15:3709-3715. [PMID: 25941743 DOI: 10.1021/acs.nanolett.5b00089] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex processes to make p-n or Schottky junctions. Here we report on a unidirectional propagation effect due to a self-induced compositional variation in GaAsSb nanowires (NWs). The individual GaAsSb NWs exhibit a highly reproducible rectifying behavior, where the rectifying direction is determined by the NW growth direction. Combining the results from confocal micro-Raman spectroscopy, electron microscopy, and electrical measurements, the origin of the rectifying behavior is found to be associated with a self-induced variation of the Sb and the carrier concentrations in the NW. To demonstrate the usefulness of these GaAsSb NWs for device applications, NW-based photodetectors and logic circuits have been made.
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Affiliation(s)
- Junghwan Huh
- †Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
| | - Hoyeol Yun
- ‡School of Physics, Konkuk University, Seoul 143-701, Korea
| | - Dong-Chul Kim
- †Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
- §CrayoNano AS, Otto Nielsens vei 12, NO-7052, Trondheim, Norway
| | - A Mazid Munshi
- †Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
- §CrayoNano AS, Otto Nielsens vei 12, NO-7052, Trondheim, Norway
| | - Dasa L Dheeraj
- †Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
- §CrayoNano AS, Otto Nielsens vei 12, NO-7052, Trondheim, Norway
| | - Hanne Kauko
- ∥Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491, Trondheim, Norway
| | - Antonius T J van Helvoort
- ∥Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491, Trondheim, Norway
| | - SangWook Lee
- ‡School of Physics, Konkuk University, Seoul 143-701, Korea
| | - Bjørn-Ove Fimland
- †Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
| | - Helge Weman
- †Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
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44
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Ameruddin AS, Fonseka HA, Caroff P, Wong-Leung J, Op het Veld RLM, Boland JL, Johnston MB, Tan HH, Jagadish C. In(x)Ga(1-x)As nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology. NANOTECHNOLOGY 2015; 26:205604. [PMID: 25927420 DOI: 10.1088/0957-4484/26/20/205604] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Obtaining compositional homogeneity without compromising morphological or structural quality is one of the biggest challenges in growing ternary alloy compound semiconductor nanowires. Here we report growth of Au-seeded InxGa1-xAs nanowires via metal-organic vapour phase epitaxy with uniform composition, morphology and pure wurtzite (WZ) crystal phase by carefully optimizing growth temperature and V/III ratio. We find that high growth temperatures allow the InxGa1-xAs composition to be more uniform by suppressing the formation of typically observed spontaneous In-rich shells. A low V/III ratio results in the growth of pure WZ phase InxGa1-xAs nanowires with uniform composition and morphology while a high V/III ratio allows pure zinc-blende (ZB) phase to form. Ga incorporation is found to be dependent on the crystal phase favouring higher Ga concentration in ZB phase compared to the WZ phase. Tapering is also found to be more prominent in defective nanowires hence it is critical to maintain the highest crystal structure purity in order to minimize tapering and inhomogeneity. The InP capped pure WZ In0.65Ga0.35As core-shell nanowire heterostructures show 1.54 μm photoluminescence, close to the technologically important optical fibre telecommunication wavelength, which is promising for application in photodetectors and nanoscale lasers.
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Affiliation(s)
- Amira S Ameruddin
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia. Faculty of Science, Technology and Human Development, Universiti Tun Hussein Onn Malaysia, Parit Raja, 86400, Batu Pahat, Johor, Malaysia
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45
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Zhang Y, Sanchez AM, Wu J, Aagesen M, Holm JV, Beanland R, Ward T, Liu H. Polarity-Driven Quasi-3-Fold Composition Symmetry of Self-Catalyzed III-V-V Ternary Core-Shell Nanowires. NANO LETTERS 2015; 15:3128-3133. [PMID: 25822399 DOI: 10.1021/acs.nanolett.5b00188] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
A quasi-3-fold composition symmetry has for the first time been observed in self-catalyzed III-V-V core-shell nanowires. In GaAsP nanowires, phosphorus-rich sheets on radial {110} planes originating at the corners of the hexagonal core were observed. In a cross section, they appear as six radial P-rich bands that originate at the six outer corners of the hexagonal core, with three of them higher in P content along ⟨112⟩A direction and others along ⟨112⟩B, forming a quasi-3-fold composition symmetry. We propose that these P-rich bands are caused by a curvature-induced high surface chemical potential at the small corner facets, which drives As adatoms away more efficiently than P adatoms. Moreover, their polarity related P content difference can be explained by the different adatom bonding energies at these polar corner facets. These results provide important information on the further development of shell growth in the self-catalyzed core-shell NW structure and, hence, device structure for multicomponent material systems.
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Affiliation(s)
- Yunyan Zhang
- †Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
| | - Ana M Sanchez
- ‡Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Jiang Wu
- †Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
| | - Martin Aagesen
- §Gasp Solar ApS, Gregersensvej 7, Taastrup DK-2630, Denmark
| | - Jeppe V Holm
- §Gasp Solar ApS, Gregersensvej 7, Taastrup DK-2630, Denmark
- ∥Center for Quantum Devices, Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen, Denmark
| | - Richard Beanland
- ‡Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Thomas Ward
- ‡Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Huiyun Liu
- †Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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46
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Yuan X, Caroff P, Wong-Leung J, Tan HH, Jagadish C. Controlling the morphology, composition and crystal structure in gold-seeded GaAs(1-x)Sb(x) nanowires. NANOSCALE 2015; 7:4995-5003. [PMID: 25692266 DOI: 10.1039/c4nr06307d] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
While III-V binary nanowires are now well controlled and their growth mechanisms reasonably well understood, growing ternary nanowires, including controlling their morphology, composition and crystal structure remains a challenge. However, understanding and control of ternary alloys is of fundamental interest and critical to enable a new class of nanowire devices. Here, we report on the progress in understanding the complex growth behaviour of gold-seeded GaAs1-xSbx nanowires grown by metalorganic vapour phase epitaxy. The competition between As and Sb atoms for incorporation into the growing crystal leads to a tunability of the Sb content over a broad range (x varies from 0.09 to 0.6), solely by changing the AsH3 flow. In contrast, changing TMSb flow is more effective in affecting the morphology and crystal structure of the nanowires. Inclined faults are found in some of these nanowires and directly related to the kinking of the nanowires and controlled by TMSb flow. Combined with the observed sharp increase of wetting angle between the Au seed and nanowire, the formation of inclined faults are attributed to the Au seed being dislodged from the growth front to wet the sidewalls of the nanowires, and are related to the surfactant role of Sb. The insights provided by this study should benefit future device applications relying on taper- and twin-free ternary antimonide III-V nanowire alloys and their heterostructures.
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Affiliation(s)
- Xiaoming Yuan
- Department of Electronic Materials Engineering, Research School of Physics & Engineering, The Australian National University, Canberra, ACT 0200, Australia.
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47
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Rieger T, Rosenbach D, Mussler G, Schäpers T, Grützmacher D, Lepsa MI. Simultaneous integration of different nanowires on single textured Si (100) substrates. NANO LETTERS 2015; 15:1979-86. [PMID: 25650521 DOI: 10.1021/nl504854v] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
By applying a texturing process to silicon substrates, we demonstrate the possibility to integrate III-V nanowires on (100) oriented silicon substrates. Nanowires are found to grow perpendicular to the {111}-oriented facets of pyramids formed by KOH etching. Having control of the substrate orientation relative to the incoming fluxes enables not only the growth of nanowires on selected facets of the pyramids but also studying the influence of the fluxes on the nanowire nucleation and growth. Making use of these findings, we show that nanowires with different dimensions can be grown on the same sample and, additionally, it is even possible to integrate nanowires of different semiconductor materials, for example, GaAs and InAs, on the very same sample.
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Affiliation(s)
- Torsten Rieger
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH , 52425 Jülich, Germany
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48
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Stehr JE, Dobrovolsky A, Sukrittanon S, Kuang Y, Tu CW, Chen WM, Buyanova IA. Optimizing GaNP coaxial nanowires for efficient light emission by controlling formation of surface and interfacial defects. NANO LETTERS 2015; 15:242-247. [PMID: 25426571 DOI: 10.1021/nl503454s] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We report on identification and control of important nonradiative recombination centers in GaNP coaxial nanowires (NWs) grown on Si substrates in an effort to significantly increase light emitting efficiency of these novel nanostructures promising for a wide variety of optoelectronic and photonic applications. A point defect complex, labeled as DD1 and consisting of a P atom with a neighboring partner aligned along a crystallographic ⟨ 111 ⟩ axis, is identified by optically detected magnetic resonance as a dominant nonradiative recombination center that resides mainly on the surface of the NWs and partly at the heterointerfaces. The formation of DD1 is found to be promoted by the presence of nitrogen and can be suppressed by reducing the strain between the core and shell layers, as well as by protecting the optically active shell by an outer passivating shell. Growth modes employed during the NW growth are shown to play a role. On the basis of these results, we identify the GaP/GaN(y)P(1-y)/GaN(x)P(1-x) (x < y) core/shell/shell NW structure, where the GaN(y)P(1-y) inner shell with the highest nitrogen content serves as an active light-emitting layer, as the optimized and promising design for efficient light emitters based on GaNP NWs.
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Affiliation(s)
- Jan E Stehr
- Department of Physics, Chemistry and Biology, Linköping University , 581 83 Linköping, Sweden
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49
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Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires. Nat Commun 2014; 5:5249. [PMID: 25319499 DOI: 10.1038/ncomms6249] [Citation(s) in RCA: 83] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2014] [Accepted: 09/11/2014] [Indexed: 01/17/2023] Open
Abstract
Although various device structures based on GaSb nanowires have been realized, further performance enhancement suffers from uncontrolled radial growth during the nanowire synthesis, resulting in non-uniform and tapered nanowires with diameters larger than few tens of nanometres. Here we report the use of sulfur surfactant in chemical vapour deposition to achieve very thin and uniform GaSb nanowires with diameters down to 20 nm. In contrast to surfactant effects typically employed in the liquid phase and thin-film technologies, the sulfur atoms contribute to form stable S-Sb bonds on the as-grown nanowire surface, effectively stabilizing sidewalls and minimizing unintentional radial nanowire growth. When configured into transistors, these devices exhibit impressive electrical properties with the peak hole mobility of ~200 cm(2 )V(-1 )s(-1), better than any mobility value reported for a GaSb nanowire device to date. These factors indicate the effectiveness of this surfactant-assisted growth for high-performance small-diameter GaSb nanowires.
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50
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Jiang N, Wong-Leung J, Joyce HJ, Gao Q, Tan HH, Jagadish C. Understanding the true shape of Au-catalyzed GaAs nanowires. NANO LETTERS 2014; 14:5865-72. [PMID: 25244584 DOI: 10.1021/nl5027937] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
With increasing interest in nanowire-based devices, a thorough understanding of the nanowire shape is required to gain tight control of the quality of nanowire heterostructures and improve the performance of related devices. We present a systematic study of the sidewalls of Au-catalyzed GaAs nanowires by investigating the faceting process from the beginning with vapor-liquid-solid (VLS) nucleation, followed by the simultaneous radial growth on the sidewalls, and to the end with sidewall transformation during annealing. The VLS nucleation interface of our GaAs nanowires is revealed by examining cross sections of the nanowire, where the nanowire exhibits a Reuleaux triangular shape with three curved surfaces along {112}A. These curved surfaces are not thermodynamically stable and adopt {112}A facets during radial growth. We observe clear differences in radial growth rate between the ⟨112⟩A and ⟨112⟩B directions with {112}B facets forming due to the slower radial growth rate along ⟨112⟩B directions. These sidewalls transform to {110} facets after high temperature (>500 °C) annealing. A nucleation model is proposed to explain the origin of the Reuleaux triangular shape of the nanowires, and the sidewall evolution is explained by surface kinetic and thermodynamic limitations.
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Affiliation(s)
- Nian Jiang
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, and ‡Centre of Advanced Microscopy, The Australian National University , Canberra, ACT 0200, Australia
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