Nanoscale conducting oxide PlasMOStor

Engineering the temporal dynamics of all-optical switching with fast and slow materials

All-optical switches control the amplitude, phase, and polarization of light using optical control pulses. They can operate at ultrafast timescales - essential for technology-driven applications like optical computing, and fundamental studies like time-reflection. Conventional all-optical switches have a fixed switching time, but this work demonstrates that the response-time can be controlled by selectively controlling the light-matter-interaction in so-called fast and slow materials. The bi-material switch has a nanosecond response when the probe interacts strongly with titanium nitride near its epsilon-near-zero (ENZ) wavelength. The response-time speeds up over two orders of magnitude with increasing probe-wavelength, as light's interaction with the faster Aluminum-doped zinc oxide (AZO) increases, eventually reaching the picosecond-scale near AZO's ENZ-regime. This scheme provides several additional degrees of freedom for switching time control, such as probe-polarization and incident angle, and the pump-wavelength. This approach could lead to new functionalities within key applications in multiband transmission, optical computing, and nonlinear optics.

Tailoring the Thickness-Dependent Optical Properties of Conducting Nitrides and Oxides for Epsilon-Near-Zero-Enhanced Photonic Applications

The unique properties of the emerging photonic materials, conducting nitrides and oxides, especially their tailorability, large damage thresholds, and, importantly, the so-called epsilon-near-zero (ENZ) behavior, have enabled novel photonic phenomena spanning optical circuitry, tunable metasurfaces, and nonlinear optical devices. This work explores direct control of the optical properties of polycrystalline titanium nitride (TiN) and aluminum-doped zinc oxide (AZO) by tailoring the film thickness, and their potential for ENZ-enhanced photonic applications. This study demonstrates that TiN-AZO bilayers support Ferrell-Berreman modes using the thickness-dependent ENZ resonances in the AZO films operating in the telecom wavelengths spanning from 1470 to 1750 nm. The bilayer stacks also act as strong light absorbers in the ultraviolet regime using the radiative ENZ modes and the Fabry-Perot modes in the constituent TiN films. The studied Berreman resonators exhibit optically induced reflectance modulation of 15% with picosecond response time. Together with the optical response tailorability of conducting oxides and nitrides, using the field enhancement near the tunable ENZ regime can enable a wide range of nonlinear optical phenomena, including all-optical switching, time refraction, and high-harmonic generation.

Photonic Characterisation of Indium Tin Oxide as a Function of Deposition Conditions

Indium tin oxide (ITO) has recently gained prominence as a photonic nanomaterial, for example, in modulators, tuneable metasurfaces and for epsilon-near-zero (ENZ) photonics. The optical properties of ITO are typically described by the Drude model and are strongly dependent on the deposition conditions. In the current literature, studies often make several assumptions to connect the optically measured material parameters to the electrical properties of ITO, which are not always clear, nor do they necessarily apply. Here, we present a comprehensive study of the structural, electrical, and optical properties of ITO and showed how they relate to the deposition conditions. We use guided mode resonances to determine the dispersion curves of the deposited material and relate these to structural and electrical measurements to extract all relevant material parameters. We demonstrate how the carrier density, mobility, plasma frequency, electron effective mass, and collision frequency vary as a function of deposition conditions, and that the high-frequency permittivity (ϵ∞) can vary significantly from the value of ϵ∞ = 3.9 that many papers simply assume to be a constant. The depth of analysis we demonstrate allows the findings to be easily extrapolated to the photonic characterisation of other transparent conducting oxides (TCOs), whilst providing a much-needed reference for the research area.

Photonic metamaterial with a subwavelength electrode pattern

The next generation of tunable photonics requires highly conductive and light inert interconnects that enable fast switching of phase, amplitude, and polarization modulators without reducing their efficiency. As such, metallic electrodes should be avoided, as they introduce significant parasitic losses. Transparent conductive oxides, on the other hand, offer reduced absorption due to their high bandgap and good conductivity due to their relatively high carrier concentration. Here, we present a metamaterial that enables electrodes to be in contact with the light active part of optoelectronic devices without the accompanying metallic losses and scattering. To this end, we use transparent conductive oxides and refractive index matched dielectrics as the metamaterial constituents. We present the metamaterial construction together with various characterization techniques that confirm the desired optical and electrical properties.

Photonic time crystals: a materials perspective [Invited]

Recent advances in ultrafast, large-modulation photonic materials have opened the door to many new areas of research. One specific example is the exciting prospect of photonic time crystals. In this perspective, we outline the most recent material advances that are promising candidates for photonic time crystals. We discuss their merit in terms of modulation speed and depth. We also investigate the challenges yet to be faced and provide our estimation on possible roads to success.

Gas phase fabrication of morphology-controlled ITO nanoparticles and their assembled conductive films

ITO nanoparticles were generated in the gas phase with a magnetron plasma gas aggregation cluster source. Their morphologies were modified by modulating the discharging power of magnetron sputtering. The shape of the nanoparticles changed from rough spheroid formed with a higher discharging power to multi-branch formed with a lower discharging power. With a discharging power of 25 W, the ITO nanoparticles were enriched with tripod and tetrapod-shaped nanoparticles. The formation mechanism of multi-branch nanoparticles was attributed to the oriented attachment of the initially nucleated smaller nanocrystallites. Transparent conductive ITO nanoparticle films were fabricated by depositing the preformed nanoparticles with controlled thickness. The electron conduction in the film was dominated by electron tunnelling and/or hopping in the percolative channels comprised of closely spaced ITO nanoparticle assemblies and could be tuned from highly resistive nonmetal-like to highly conductive metal-like by changing the deposition thickness. The film also displayed a SPR band in the near-IR region. The conductivity of the multi-branch ITO nanoparticle film was significantly superior to that of the spheroidal nanoparticle film. For a 46 nm thick multi-branch ITO nanoparticle film, a surprisingly low specific resistance of 3.09 × 10^-4 Ω cm, which is comparable to the top-class conductivity of bulk ITO films, was obtained after annealing at a mild temperature of 250 °C, with a transmittance larger than 85%.

In-Operando Optical Spectroscopy of Field-Effect-Gated Al-Doped ZnO

Transparent conductive oxides (TCO) have the unique characteristics of combining optical transparency with high electrical conductivity; such a property makes them uniquely alluring for applications in visible and infrared photonics. One of their most interesting features is the large sensitivity of their optical response to the doping level. We performed the active electrical manipulation of the dielectric properties of aluminum-doped ZnO (AZO), a TCO-based on Earth-abundant elements. We actively tuned the optical and electric performances of AZO films by means of an applied voltage in a parallel-plate capacitor configuration, with SrTiO₃ as the dielectric, and monitored the effect of charge injection/depletion by means of in-operando spectroscopic ellipsometry. Calculations of the optical response of the gated system allowed us to extract the spatially resolved variations in the dielectric function of the TCO and infer the injected/depleted charge profile at the interface.

Double-Resolved Beam Steering by Metagrating-Based Tamm Plasmon Polariton

We consider Tamm plasmon polariton in a subwavelength grating patterned on top of a Bragg reflector. We demonstrate dynamic control of the phase and amplitude of a plane wave reflected from such metagrating due to resonant coupling with the Tamm plasmon polariton. The tunability of the phase and amplitude of the reflected wave arises from modulation of the refractive index of a transparent conductive oxide layer by applying the bias voltage. The electrical switching of diffracted beams of the ±1st order is shown. The possibility of doubling the angular resolution of beam steering by using asymmetric reflected phase distribution with integer and half-integer periods of the metagrating is demonstrated.

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique. The review then expands on the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.

Optimizing epsilon-near-zero based plasmon assisted modulators through surface-to-volume ratio

Plasmonic-based integrated nanophotonic modulators, despite their promising features, have one key limiting factor of large insertion loss (IL), which limits their practical potential. To combat this, we utilize a plasmon-assisted approach through the lens of surface-to-volume ratio to realize a 4-slot based EAM with an extinction ratio (ER) of 2.62 dB/µm and insertion loss (IL) of 0.3 dB/µm operating at ∼1 GHz and a single slot design with ER of 1.4 dB/µm and IL of 0.25 dB/µm operating at ∼20 GHz, achieved by replacing the traditional metal contact with heavily doped indium tin oxide (ITO). Furthermore, our analysis imposes realistic fabrication constraints, and material properties, and illustrates trade-offs in the performance that must be carefully optimized for a given scenario.

Efficient binary and QAM optical modulation in ultra-compact MZI structures utilizing indium-tin-oxide

A design for a CMOS-compatible active waveguide is proposed in which the epsilon-near-zero (ENZ) property of the indium-tin-oxide (ITO) is used to induce large variations in the real and imaginary parts of the waveguide effective index. The proposed waveguide comprises a TiN/HfO₂/ITO metal–oxide–semiconductor (MOS) structure where the speed and power consumption are significantly improved by the application of the TiN and realization of double accumulation layers in the ITO. Simulations show the insertion loss (IL) of 0.38 dB/μm, extinction ratio (ER) of 11 dB/μm, the energy consumption of 11.87fJ/bit and electrical bandwidth of 280 GHz when the designed waveguide is used as an electro-absorption modulator. The waveguide is then used in an MZI structure to design binary and quadrature-amplitude-modulator (QAM) modulators. For binary modulator, the IL, ER, and V_πL_π figures of merit are found to be 1.24 dB, 54 dB, and 6.4 V μm, respectively, which show substantial improvement over previous ITO-based designs. In the QAM design, the symmetry in the real and imaginary parts of the waveguide effective index is employed to obviate the need for additional phase shift elements. This considerably reduces the overall length of the proposed QAM modulator and improves efficiency. Simulations show the energy consumption and bit rate, of 2fJ/bit and 560 Gbps, respectively in a 4-QAM modulator with the overall length of 6.2 μm. The symmetry properties of the proposed waveguide can be further exploited to realize quadrature-phase-shift-keying (QPSK) modulators which here is used in combination with the 4-QAM to propose a design for the more advanced modulation scheme of 16-QAM. The design of ITO-based QAM modulators is here reported for the first time and the abovementioned performance parameters show the unique properties of these modulators in terms of footprint, energy consumption and modulation-speed.

ITO film stack engineering for low-loss silicon optical modulators

The Indium Tin Oxide (ITO) platform is one of the promising solutions for state-of-the-art integrated optical modulators towards low-loss silicon photonics applications. One of the key challenges on this way is to optimize ITO-based thin films stacks for electro-optic modulators with both high extinction ratio and low insertion loss. In this paper we demonstrate the e-beam evaporation technology of 20 nm-thick ITO films with low extinction coefficient of 0.14 (N_c = 3.7·10²⁰ cm⁻³) at 1550 nm wavelength and wide range of carrier concentrations (from 1 to 10 × 10²⁰ cm⁻³). We investigate ITO films with amorphous, heterogeneously crystalline, homogeneously crystalline with hidden coarse grains and pronounced coarsely crystalline structure to achieve the desired optical and electrical parameters. Here we report the mechanism of oxygen migration in ITO film crystallization based on observed morphological features under low-energy growth conditions. Finally, we experimentally compare the current–voltage and optical characteristics of three electro-optic active elements based on ITO film stacks and reach strong ITO dielectric permittivity variation induced by charge accumulation/depletion (Δn = 0.199, Δk = 0.240 at λ = 1550 nm under ± 16 V). Our simulations and experimental results demonstrate the unique potential to create integrated GHz-range electro-optical modulators with sub-dB losses.

Fano Resonance Hybrid Waveguide-Coupled Plasmonic Sensor Using Transparent Conductive Oxide in the Near-Infrared Range

We proposed an ultra-sensitive refractive index sensor by using indium-doped cadmium oxide as a plasmonic material operating in near-infrared based on Fano resonance. The proposed sensor has a hybrid multilayer waveguide structure that supports both a long-range surface plasmon polariton (LRSPP) mode and a dielectric waveguide (DWG) mode. The design strategy of the structure parameters of the inner layers is elaborated in detail through the numerical analysis of the two modes. By suitably tailoring the thickness of the coupling layer, a strong mode coupling between the two modes could be achieved, leading to a sharp asymmetric Fano resonance. With the designed optimal physical parameters, our proposed sensor could achieve a maximum intensity sensitivity of 19,909 RIU−1, a 193-fold enhancement than that of a conventional long-range SPR (LRSPR) based scheme. The proposed design can be a promising platform for biochemical sensing in the near-infrared region.

Active optical metasurfaces: comprehensive review on physics, mechanisms, and prospective applications

Optical metasurfaces with subwavelength thickness hold considerable promise for future advances in fundamental optics and novel optical applications due to their unprecedented ability to control the phase, amplitude, and polarization of transmitted, reflected, and diffracted light. Introducing active functionalities to optical metasurfaces is an essential step to the development of next-generation flat optical components and devices. During the last few years, many attempts have been made to develop tunable optical metasurfaces with dynamic control of optical properties (e.g., amplitude, phase, polarization, spatial/spectral/temporal responses) and early-stage device functions (e.g., beam steering, tunable focusing, tunable color filters/absorber, dynamic hologram, etc) based on a variety of novel active materials and tunable mechanisms. These recently-developed active metasurfaces show significant promise for practical applications, but significant challenges still remain. In this review, a comprehensive overview of recently-reported tunable metasurfaces is provided which focuses on the ten major tunable metasurface mechanisms. For each type of mechanism, the performance metrics on the reported tunable metasurface are outlined, and the capabilities/limitations of each mechanism and its potential for various photonic applications are compared and summarized. This review concludes with discussion of several prospective applications, emerging technologies, and research directions based on the use of tunable optical metasurfaces. We anticipate significant new advances when the tunable mechanisms are further developed in the coming years.

Control of electronic band profiles through depletion layer engineering in core-shell nanocrystals

Fermi level pinning in doped metal oxide (MO) nanocrystals (NCs) results in the formation of depletion layers, which affect their optical and electronic properties, and ultimately their application in smart optoelectronics, photocatalysis, or energy storage. For a precise control over functionality, it is important to understand and control their electronic bands at the nanoscale. Here, we show that depletion layer engineering allows designing the energetic band profiles and predicting the optoelectronic properties of MO NCs. This is achieved by shell thickness tuning of core-shell Sn:In₂O₃-In₂O₃ NCs, resulting in multiple band bending and multi-modal plasmonic response. We identify the modification of the band profiles after the light-induced accumulation of extra electrons as the main mechanism of photodoping and enhance the charge storage capability up to hundreds of electrons per NC through depletion layer engineering. Our experimental results are supported by theoretical models and are transferable to other core-multishell systems as well.

Mid-infrared optical modulator based on silicon D-shaped photonic crystal fiber with VO2 material

Recently, photonic crystal fibers (PCFs) have become of significant interest due to their various applications, especially in the mid-infrared (mid-IR) regime. In this work, an optical mid-IR modulator based on silicon D-shaped PCF (Si-D-PCF) with vanadium dioxide (VO₂) as a phase changing material (PCM) is presented and analyzed. Thanks to the phase transition of the VO₂ material between insulating (ON) and conducting (OFF) states, the modulation process can be attained. The well-known full vectorial finite element method is utilized to numerically analyze the proposed design. Further, the propagation of light through the suggested structure is studied using the 3D finite difference time domain method. The optical losses of the fundamental TM mode supported by the Si-D-PCF structure in both ON and OFF states are investigated. The obtained results reveal that the extinction ratio (ER) of the reported modulator approaches 236 dB, while the insertion loss (IL) is less than 1.3 dB over the studied wavelength range 3-7 µm at a device length (L_D) of 0.5 mm. Additionally, the ER of the proposed modulator is higher than 56 dB through the whole studied wavelength range. Therefore, the proposed modulator could be utilized in photonic integrated circuits that require high ER, low IL, and large bandwidth. To the best of the authors' knowledge, this is the first time an infrared optical modulator based on Si-D-PCF with VO₂ material has been presented.

Broadband Metallic Fiber-to-Chip Couplers and a Low-Complexity Integrated Plasmonic Platform

We present a plasmonic platform featuring efficient, broadband metallic fiber-to-chip couplers that directly interface plasmonic slot waveguides, such as compact and high-speed electro-optic modulators. The metallic gratings exhibit an experimental fiber-to-slot coupling efficiency of -2.7 dB with -1.4 dB in simulations with the same coupling principle. Further, they offer a huge spectral window with a 3 dB passband of 350 nm. The technology relies on a vertically arranged layer stack, metal-insulator-metal waveguides, and fiber-to-slot couplers and is formed in only one lithography step with a minimum feature size of 250 nm. As an application example, we fabricate new modulator devices with an electro-optic organic material in the slot waveguide and reach 50 and 100 Gbit/s data modulation in the O- and C-bands within the same device. The devices' broad spectral bandwidth and their relaxed fabrication may render them suitable for experiments and applications in the scope of sensing, nonlinear optics, or telecommunications.

A high speed electrically switching reflective structural color display with large color gamut

Structural colors, which originate from the interactions between light and nanometer-scale structured materials, have the advantages of durability and environmentally friendly display compared with pigments and dyes. A large color gamut, high-speed, electrically-switching reflective structural color display is critical to dynamically tunable reflective structural color devices. Here, we report a theoretical design of an electrically switching reflective structural color display device with a large color gamut (∼157% sRGB, standard red green blue) and high speed (>10 MHz). Benefiting from the electric-switchable Epsilon-Near-Zero material and 1D dielectric grating with guided-mode resonance, the reflective display device can be electrically turned on or turned off by switching between a narrow band reflector and a transparent film. This design provides a promising solution towards reflective color displays, optical switches, spatial light modulators and so on.

Broadening Near-Field Emission for Performance Enhancement in Thermophotovoltaics

The conventional notion for achieving high efficiency in thermophotovoltaics (TPVs) is to use a monochromatic emission at a photon energy corresponding to the band gap of the cell. Here, we prove theoretically that such a notion is only accurate under idealized conditions and further show that, when nonradiative recombination is taken into account, efficiency improvement can be achieved by broadening the emission spectrum, due to an enhancement in the open-circuit voltage. Broadening the emission spectrum also improves the electrical power density, by increasing the short-circuit current. Hence, broadening the emission spectrum can simultaneously improve the efficiency and power density of practical TPV systems. To illustrate these findings, we focus on surface polariton-mediated near-field TPVs. We propose a versatile design strategy for broadening the emission spectrum via stacking of multiple plasmonic thin film layers. As an example, we consider a realistic ITO/InAs TPV and predict a conversion efficiency of 50% simultaneously with a power density of nearly 80 W/cm² at a 1300 K emitter temperature. The performance of our proposed system far exceeds previous works in similar systems using a single plasmonic layer emitter.

Multi-wavelength voltage-coded metasurface based on indium tin oxide: independently and dynamically controllable near-infrared multi-channels

In this paper, we present a design principle for achieving an electrically tunable, multi-wavelength device with multiple functionalities over a single metasurface platform with minimized footprint. This concept is realized based on the integration of four metal-insulator-metal (MIM) inclusions inside a unit cell, which is configured to support four independently controllable operating channels lying in near-infrared (NIR) regime. Incorporation of newly emerged, electrically tunable indium tin oxide (ITO) into such metasurface leads to a dynamical phase modulation over the reflected light. As a result, the phase tunability of almost 285^°, 230^°, 300^°, and 280^° are captured at T, O, C, and U optical communications bands, under applying external bias voltages. A digital coding strategy, consisting of "0" and "1" binary bits, is employed to represent the applied biasing configuration to the sub-units. Independently controlled, decoupled gap plasmon resonators, with the ability of eliminating the interference between channels, are enabled thanks to the geometry optimization and careful selection of materials. A meta-array configuration is implemented, in which electrically addressing the groups of MIM sub-units opens a pathway to the tunable applications, namely Airy beam generation, beam splitting, steering, and focusing.

Tunable metasurfaces for visible and SWIR applications

Demand on optical or photonic applications in the visible or short-wavelength infrared (SWIR) spectra, such as vision, virtual or augmented displays, imaging, spectroscopy, remote sensing (LIDAR), chemical reaction sensing, microscopy, and photonic integrated circuits, has envisaged new type of subwavelength-featured materials and devices for controlling electromagnetic waves. The study on metasurfaces, of which the thickness is either comparable to or smaller than the wavelength of the considered incoming electromagnetic wave, has been grown rapidly to embrace the needs of developing sub 100-micron active photonic pixelated devices and their arrayed form. Meta-atoms in metasurfaces are now actively controlled under external stimuli to lead to a large phase shift upon the incident light, which has provided a huge potential for arrayed two-dimensional active optics. This short review summarizes actively tunable or reconfigurable metasurfaces for the visible or SWIR spectra, to account for the physical operating principles and the current issues to overcome.

Towards Deep Integration of Electronics and Photonics

A combination of computational power provided by modern MOSFET-based devices with light assisted wideband communication at the nanoscale can bring electronic technologies to the next level. Obvious obstacles include a size mismatch between electronic and photonic components as well as a weak light–matter interaction typical for existing devices. Polariton modes can be used to overcome these difficulties at the fundamental level. Here, we review applications of such modes, related to the design and fabrication of electro–optical circuits. The emphasis is made on surface plasmon-polaritons which have already demonstrated their value in many fields of technology. Other possible quasiparticles as well as their hybridization with plasmons are discussed. A quasiparticle-based paradigm in electronics, developed at the microscopic level, can be used in future molecular electronics and quantum computing.

Effect of oxygen stoichiometry on the structure, optical and epsilon-near-zero properties of indium tin oxide films

Transparent conductive oxide (TCO) films showing epsilon near zero (ENZ) properties have attracted great research interest due to their unique property of electrically tunable permittivity. In this work, we report the effect of oxygen stoichiometry on the structure, optical and ENZ properties of indium tin oxide (ITO) films fabricated under different oxygen partial pressures. By using spectroscopic ellipsometry (SE) with fast data acquisition capabilities, we observed modulation of the material index and ENZ wavelength under electrostatic gating. Using a two-layer model based on Thomas-Fermi screening model and the Drude model, the optical constants and Drude parameters of the ITO thin films are determined during the gating process. The maximum carrier modulation amplitude ΔN of the accumulation layer is found to vary significantly depending on the oxygen stoichiometry. Under an electric field gate bias of 2.5 MV/cm, the largest ENZ wavelength modulation up to 27.9 nm at around 1550 nm is observed in ITO thin films deposited with oxygen partial pressure of P _{O 2} =10 Pa. Our work provides insights to the optical properties of ITO during electrostatic gating process for electro-optic modulators (EOMs) applications.

Dynamic beam steering with all-dielectric electro-optic III-V multiple-quantum-well metasurfaces

Tunable metasurfaces enable dynamical control of the key constitutive properties of light at a subwavelength scale. To date, electrically tunable metasurfaces at near-infrared wavelengths have been realized using free carrier modulation, and switching of thermo-optical, liquid crystal and phase change media. However, the highest performance and lowest loss discrete optoelectronic modulators exploit the electro-optic effect in multiple-quantum-well heterostructures. Here, we report an all-dielectric active metasurface based on electro-optically tunable III–V multiple-quantum-wells patterned into subwavelength elements that each supports a hybrid Mie-guided mode resonance. The quantum-confined Stark effect actively modulates this volumetric hybrid resonance, and we observe a relative reflectance modulation of 270% and a phase shift from 0° to ~70°. Additionally, we demonstrate beam steering by applying an electrical bias to each element to actively change the metasurface period, an approach that can also realize tunable metalenses, active polarizers, and flat spatial light modulators.

Here, the authors demonstrate an electrically tunable metasurface with III–V semiconducting MQW structures as resonant metasurface elements. The amplitude and phase of the light reflected from the metasurface can be continuously tuned by applying DC electric field across the MQW metasurface elements.

Towards integrated metatronics: a holistic approach on precise optical and electrical properties of Indium Tin Oxide

The class of transparent conductive oxides includes the material indium tin oxide (ITO) and has become a widely used material of modern every-day life such as in touch screens of smart phones and watches, but also used as an optically transparent low electrically-resistive contract in the photovoltaics industry. More recently ITO has shown epsilon-near-zero (ENZ) behavior in the telecommunication frequency band enabling both strong index modulation and other optically-exotic applications such as metatronics. However, the ability to precisely obtain targeted electrical and optical material properties in ITO is still challenging due to complex intrinsic effects in ITO and as such no integrated metatronic platform has been demonstrated to-date. Here we deliver an extensive and accurate description process parameter of RF-sputtering, showing a holistic control of the quality of ITO thin films in the visible and particularly near-infrared spectral region. We are able to custom-engineer the ENZ point across the telecommunication band by explicitly controlling the sputtering process conditions. Exploiting this control, we design a functional sub-wavelength-scale filter based on lumped circuit-elements, towards the realization of integrated metatronic devices and circuits.

Gate-tunable optical filter based on conducting oxide metasurface heterostructure

A gate-tunable plasmonic optical filter incorporating a subwavelength patterned metal-insulator-metal metasurface heterostructure is proposed. An additional thin transparent conducting oxide (TCO) layer is embedded in the insulator layer to form a double metal-oxide-semiconductor configuration. Heavily n-doped indium tin oxide (ITO) is employed as the TCO material, whose optical property can be electrically tuned by the formation of a thin active epsilon-near-zero layer at the ITO-oxide interfaces. Full-wave electromagnetic simulations show that amplitude modulation and shift of transmission peak are achievable with 3-5 V applied bias, depending on the application. Moreover, the modulation strength and transmission peak shift increase with a thinner ITO layer. This work is an essential step toward a realization of next-generation compact photonic/plasmonic integrated devices.

Theoretical study of bicharacteristic waveguide for fundamental-mode phase-matched SHG from MIR to NIR

In this paper, a bicharacteristic waveguide (BW) is proposed for fundamental-mode phase-matched second harmonic generation (SHG) from mid-infrared (MIR) to near-infrared (NIR). The required phase matching condition (PMC) is satisfied between the fundamental plasmonic mode at 3100 nm and the photonic mode at 1550 nm. With 1 W pump power, the SHG conversion efficiency of 4.173% can be obtained in 90.3 μm length waveguide. Moreover, the SHG conversion can be enhanced by using a microring resonator (MRR). By optimizing the MRR, the SHG conversion efficiency is increased to 8.30%. The proposed waveguide can also provide a promising platform for upconversion detection. By using an on-chip cascaded configuration, a gas sensor with the capability of MIR absorption and NIR detection is proposed. It is found that the detection limit (DL) can reach 1.04 nmol/L with 100 mW pump power, which shows significant enhancement compared with direct MIR absorption and detection.

Gate-Tunable Plasmon-Induced Transparency Modulator Based on Stub-Resonator Waveguide with Epsilon-Near-Zero Materials

We demonstrate an electrically tunable ultracompact plasmonic modulator with large modulation strength (>10 dB) and a small footprint (~1 μm in length) via plasmon-induced transparency (PIT) configuration. The modulator based on a metal-oxide-semiconductor (MOS) slot waveguide structure consists of two stubs embedded on the same side of a bus waveguide forming a coupled system. Heavily n-doped indium tin oxide (ITO) is used as the semiconductor in the MOS waveguide. A large modulation strength is realized due to the formation of the epsilon-near-zero (ENZ) layer at the ITO-oxide interface at the wavelength of the modulated signal. Numerical simulation results reveal that such a significant modulation can be achieved with a small applied voltage of ~3V. This result shows promise in developing nanoscale modulators for next generation compact photonic/plasmonic integrated circuits.

Controlling the Mechanism of Excitonic Splitting in In2O3 Nanocrystals by Carrier Delocalization

Degenerately doped metal oxide nanocrystals have emerged as infrared plasmonic materials with promising applications in optoelectronics, surface-enhanced infrared spectroscopies, and sensing. They also have potential for technological applications in electronics and photonics owing to the possibility of coupling between plasmon and exciton in the absence of a heterojunction. Here, we demonstrate the control of excitonic splitting in In₂O₃ nanocrystals upon excitation with circularly polarized light in an external magnetic field by simultaneous control of the electronic structure of donor defects and the nanocrystal host lattice. Using variable-temperature-variable-field magnetic circular dichroism spectroscopy, we show that the nanocrystal band splitting has two distinct contributions in plasmonic In₂O₃ nanocrystals. Temperature-independent splitting arises from the cyclotron magnetoplasmonic modes, which impart angular momentum to the conduction band excited states near the Fermi level, and increases with the intensity of the corresponding plasmon resonance. Temperature-dependent splitting is associated with the localized electron spins trapped in defect states. The ratio of the two components can be controlled by the formation of oxygen vacancies or introduction of aliovalent dopants. Using these experimental results in conjunction with the density functional theory modeling, relative contribution of the two mechanisms is discussed in the context of the perturbation theory taking into account energy separation between the nanocrystal excited states and the localized defect states. The results of this work demonstrate the ability to control carrier polarization in nonmagnetic metal oxide nanocrystals using both individual and collective electronic properties and allow for their application as an emerging class of multifunctional materials with strongly interacting degrees of freedom.

Nanofocusing in SOI-based hybrid plasmonic metal slot waveguides

Through a process of efficient dielectric to metallic waveguide mode conversion, we calculate a >400-fold field intensity enhancement in a silicon photonics compatible nanofocusing device. A metallic slot waveguide sits on top of the silicon slab waveguide with nanofocusing being achieved by tapering the slot width gradually. We evaluate the conversion between the numerous photonic modes of the planar silicon waveguide slab and the most confined plasmonic mode of a 20 x 50 nm² slot in the metallic film. With an efficiency of ~80%, this system enables remarkably effective nanofocusing, although the small amount of inter-mode coupling shows that this structure is not quite adiabatic. In order to couple photonic and plasmonic modes efficiently, in-plane focusing is required, simulated here by curved input grating couplers. The nanofocusing device shows how to efficiently bridge the photonic micro-regime and the plasmonic nano-regime whilst maintaining compatibility with the silicon photonics platform.

Nano-plasmonics and electronics co-integration in CMOS enabling a pill-sized multiplexed fluorescence microarray system

The ultra-miniaturization of massively multiplexed fluorescence-based bio-molecular sensing systems for proteins and nucleic acids into a chip-scale form, small enough to fit inside a pill (∼ 0.1cm3), can revolutionize sensing modalities in-vitro and in-vivo. Prior miniaturization techniques have been limited to focusing on traditional optical components (multiple filter sets, lenses, photo-detectors, etc.) arranged in new packaging systems. Here, we report a method that eliminates all external optics and miniaturizes an entire multiplexed fluorescence system into a 2 × 1 mm2 chip through co-integration for the first time of massively scalable nano-plasmonic multi-functional optical elements and electronic processing circuitry realized in an industry standard complementary-metal-oxide semiconductor (CMOS) foundry process with absolutely 'no change' in fabrication or processing. The implemented nano-waveguide based filters operating in the visible and near-IR realized with the embedded sub-wavelength multi-layer copper-based electronic interconnects inside the chip show for the first time a sub-wavelength surface plasmon polariton mode inside CMOS. This is the principle behind the angle-insensitive nature of the filtering that operates in the presence of uncollimated and scattering environments, enabling the first optics-free 96-sensor CMOS fluorescence sensing system. The chip demonstrates the surface sensitivity of zeptomoles of quantum dot-based labels, and volume sensitivities of ∼ 100 fM for nucleic acids and ∼ 5 pM for proteins that are comparable to, if not better, than commercial fluorescence readers. The ability to integrate multi-functional nano-optical structures in a commercial CMOS process, along with all the complex electronics, can have a transformative impact and enable a new class of miniaturized and scalable chip-sized optical sensors.

One-volt silicon photonic crystal nanocavity modulator with indium oxide gate

The ever-increasing global network traffic requires a high level of seamless integration between optical interconnect systems and complementary metal-oxide-semiconductor (CMOS) circuits. Therefore, it brings stringent requirements for future electro-optic (E-O) modulators, which should be ultracompact, energy efficient, high bandwidth, and in the meanwhile, able to be directly driven by the state-of-the-art CMOS circuits. In this Letter, we report a low-voltage silicon photonic crystal nanocavity modulator using an optimized metal-oxide-semiconductor (MOS) capacitor consisting of an In₂O₃/HfO₂/p-Si stacked nanostructure. The strong light-matter interaction from the accumulated free carriers with the nanocavity resonant mode results in holistic improvement in device performance, including a high tuning efficiency of 250 pm/V and an average modulation strength of 4 dB/V with a moderate Q factor of ∼3700 and insertion loss of ∼6  dB using an ultrashort electrode length of only 350 nm. With 1 V driving voltage over a capacitive loading of only 13 fF, the silicon photonic nanocavity modulator can achieve more than 3 dB extinction ratio with energy consumption of only 3 fJ/bit. Such a low-voltage, low-capacitance silicon nanocavity modulator provides the feasibility to be directly driven by a CMOS logic gate for single-chip integration.

Hybrid vanadate waveguiding configurations for extreme optical confinement and efficient polarization management in the near-infrared

Vanadate materials such as CaVO3 and SrVO3 were recently proposed as promising alternatives to their conventional transparent conducting oxide counterparts owing to the superior capability for simultaneous realization of high optical transparency and high electrical conductivity originating from strong electron-electron interactions. Here we show that, in addition to their remarkable optoelectronic properties as conducting materials, their incorporation into planar waveguiding configurations could enable outstanding optical performance that is otherwise difficult to achieve with conventional material building blocks, especially metals. Starting from the guided wave at a single CaVO3/dielectric interface, the unique dispersion relationship and propagation property of the fundamental mode are revealed and compared to the conventional surface plasmon polariton associated with a silver/dielectric planar configuration. The superior confinement capability and the unique modal attenuation of the CaVO3-based waveguiding platform are further demonstrated via investigating silicon-based hybrid guiding schemes integrated with a CaVO3 nanostructure. By leveraging the pronounced polarization dependent loss in the hybrid configuration, an ultra-compact TE-pass polarizer is numerically demonstrated at telecommunication wavelengths. This transformative design features a reduced footprint and enhanced optical performance when benchmarked against the current state-of-the-art in hybrid silicon polarizers. The combination of these vanadate materials with traditional waveguiding platforms thereby opens new avenues towards miniaturized functional integrated photonic devices, and potentially enables a variety of intriguing applications at the sub-diffraction-limited scale.

Ultra-compact branchless plasmonic interferometers

Miniaturization of functional optical devices and circuits is a key prerequisite for a myriad of applications ranging from biosensing to quantum information processing. This development has considerably been spurred by rapid developments within plasmonics exploiting its unprecedented ability to squeeze light into subwavelength scale. In this study, we investigate on-chip plasmonic systems allowing for synchronous excitation of multiple inputs and examine the interference between two adjacent excited channels. We present a branchless interferometer consisting of two parallel plasmonic waveguides that can be either selectively or coherently excited via ultra-compact antenna couplers. The total coupling efficiency is quantitatively characterized in a systematic manner and shown to exceed 15% for small waveguide separations, with the power distribution between the two waveguides being efficiently and dynamically shaped by adjusting the incident beam position. The presented design principle can readily be extended to other configurations, giving new perspectives for highly dense integrated plasmonic circuitry, optoelectronic devices, and sensing applications.

Compact epsilon-near-zero silicon photonic phase modulators

In this paper, we analyze a compact silicon photonic phase modulator at 1.55 μm using epsilon-near-zero transparent conducting oxide (TCO) films. The operating principle of the non-resonant phase modulator is field-effect carrier density modulation in a thin TCO film deposited on top of a passive silicon waveguide with a CMOS-compatible fabrication process. We compare phase modulator performance using both indium oxide (In₂O₃) and cadmium oxide (CdO) TCO materials. Our findings show that practical phase modulation can be achieved only when using high-mobility (i.e. low-loss) epsilon-near-zero materials such as CdO. The CdO-based phase modulator has a figure of merit of 17.1°/dB in a compact 5 μm length. This figure of merit can be increased further through the proper selection of high-mobility TCOs, opening a path for device miniaturization and increased phase shifts.

Fano Resonance Enhanced Surface Plasmon Resonance Sensors Operating in Near-Infrared

In the phase-sensitivity-based surface plasmon resonance (SPR) sensing scheme, the highest phase jump usually happens at the darkness or quasi-darkness reflection point, which results in low power for detection. To overcome such a limitation, in this paper, a waveguide-coupled SPR configuration is proposed to work at near-infrared. The coupling between surface plasmon polariton (SPP) mode and photonic waveguide (PWG) mode results in electromagnetically induced transparency (EIT) and asymmetric Fano resonance (FR). Near the resonance, the differential phase between p-polarized and s-polarized incident waves experience drastic variation upon change of the surrounding refractive index. More importantly, since the FR occurs at the resonance slope of SPP mode, the corresponding phase change is accompanied with relatively high reflectivity, which is essential for signal-to-noise ratio (SNR) enhancement and power consumption reduction. Phase sensitivity up to 106 deg/RIU order with a minimum SPR reflectivity higher than 20% is achieved. The proposed scheme provides an alternative approach for high-performance sensing applications using FR.

Impacts of surface depletion on the plasmonic properties of doped semiconductor nanocrystals

Degenerately doped semiconductor nanocrystals (NCs) exhibit a localized surface plasmon resonance (LSPR) in the infrared range of the electromagnetic spectrum. Unlike metals, semiconductor NCs offer tunable LSPR characteristics enabled by doping, or via electrochemical or photochemical charging. Tuning plasmonic properties through carrier density modulation suggests potential applications in smart optoelectronics, catalysis and sensing. Here, we elucidate fundamental aspects of LSPR modulation through dynamic carrier density tuning in Sn-doped In₂O₃ (Sn:In₂O₃) NCs. Monodisperse Sn:In₂O₃ NCs with various doping levels and sizes were synthesized and assembled in uniform films. NC films were then charged in an in situ electrochemical cell and the LSPR modulation spectra were monitored. Based on spectral shifts and intensity modulation of the LSPR, combined with optical modelling, it was found that often-neglected semiconductor properties, specifically band structure modification due to doping and surface states, strongly affect LSPR modulation. Fermi level pinning by surface defect states creates a surface depletion layer that alters the LSPR properties; it determines the extent of LSPR frequency modulation, diminishes the expected near-field enhancement, and strongly reduces sensitivity of the LSPR to the surroundings.

Attojoule-efficient graphene optical modulators

Electro-optic modulation is a technology-relevant function for signal keying, beam steering, or neuromorphic computing through providing the nonlinear activation function of a perceptron. With silicon-based modulators being bulky and inefficient, here we discuss graphene-based devices heterogeneously integrated. This study provides a critical and encompassing discussion of the physics and performance of graphene. We provide a holistic analysis of the underlying physics of modulators including graphene's index tunability, the underlying optical mode, and discuss resulting performance vectors for this novel class of hybrid modulators. Our results show that reducing the modal area and reducing the effective broadening of the active material are key to improving device performance defined by the ratio of energy-bandwidth and footprint. We further show how the waveguide's polarization must be in-plane with graphene, such as given by plasmonic-slot structures, for performance improvements. A high device performance can be obtained by introducing multi- or bi-layer graphene modulator designs. Lastly, we present recent results of a graphene-based hybrid-photon-plasmon modulator on a silicon platform and discuss electron beam lithography treatments for transferred graphene for the relevant Fermi level tuning. Being physically compact, this 100  aJ/bit modulator opens the path towards a novel class of attojoule efficient opto-electronics.

Multi-layer MOS capacitor based polarization insensitive electro-optic intensity modulator

In this study, a multi-layer metal-oxide-semiconductor capacitor (MLMOSC) polarization insensitive modulator is proposed. The design is validated by numerical simulation with commercial software LUMERICAL SOLUTION. Based on the epsilon-near-zero (ENZ) effect of indium tin oxide (ITO), the device manages to uniformly modulate both the transverse electric (TE) and the transverse magnetic (TM) modes. With a 20μm-long double-layer metal-oxide-semiconductor capacitor (DLMOSC) polarization insensitive modulator, in which two metal-oxide-semiconductor (MOS) structures are formed by the n-doped Si/HfO₂/ITO/HfO₂/ n-doped Si stack, the extinction ratios (ERs) of both the TE and the TM modes can be over 20dB. The polarization dependent losses of the device can be as low as 0.05dB for the "OFF" state and 0.004dB for the "ON" state. Within 1dB polarization dependent loss, the device can operate with over 20dB ERs at the S, C, and L bands. The polarization insensitive modulator offers various merits including ultra-compact size, broadband spectrum, and complementary metal oxide semiconductor (CMOS) compatibility.

Dual-Gated Active Metasurface at 1550 nm with Wide (>300°) Phase Tunability

Active metasurfaces composed of electrically reconfigurable nanoscale subwavelength antenna arrays can enable real-time control of scattered light amplitude and phase. Achievement of widely tunable phase and amplitude in chip-based active metasurfaces operating at or near 1550 nm wavelength has considerable potential for active beam steering, dynamic hologram rendition, and realization of flat optics with reconfigurable focal lengths. Previously, electrically tunable conducting oxide-based reflectarray metasurfaces have demonstrated dynamic phase control of reflected light with a maximum phase shift of 184° ( Nano Lett. 2016 , 16 , 5319 ). Here, we introduce a dual-gated reflectarray metasurface architecture that enables much wider (>300°) phase tunability. We explore light-matter interactions with dual-gated metasurface elements that incorporate two independent voltage-controlled MOS field effect channels connected in series to form a single metasurface element that enables wider phase tunability. Using indium tin oxide (ITO) as the active metasurface material and a composite hafnia/alumina gate dielectric, we demonstrate a prototype dual-gated metasurface with a continuous phase shift from 0 to 303° and a relative reflectance modulation of 89% under applied voltage bias of 6.5 V.

Design of a graphene-based dual-slot hybrid plasmonic electro-absorption modulator with high-modulation efficiency and broad optical bandwidth for on-chip communication

The hybrid plasmonic effect with lower loss and comparable light confinement than surface plasmon polariton opens new avenues for strengthening light-matter interactions with low loss. Here, we propose and numerically analyze a graphene-based electro-absorption modulator (EAM) with high-modulation efficiency and broad optical bandwidth using a dual-slot hybrid plasmonic waveguide (HPW), which consists of a central dual-slot HPW connected with two taper transitions and two additional dual-slot HPWs for coupling it with the input and output silicon nanowires, where graphene layers are located at the bottom and top side of the whole dual-slot HPW region. By combining the huge light enhancement effect of the dual-slot HPW and graphene's tunable conductivity, we obtain a high-modulation efficiency (ME) of 1.76 dB/μm for the graphene-based dual-slot HPW (higher ME of 2.19 dB/μm can also be obtained). Based upon this promising result, we further design a graphene-based hybrid plasmonic EAM, achieving a modulation depth (MD) of 15.95 dB and insertion loss of 1.89 dB @1.55 μm, respectively, in a total length of only 10 μm, where its bandwidth can reach over 500 nm for keeping MD>15  dB; MD can also be improved by slightly increasing the device length or shrinking the waveguide thickness, showing strong advantages for applying it into on-chip high-performance silicon modulators.

High-speed plasmonic modulator in a single metal layer

Plasmonics provides a possible route to overcome both the speed limitations of electronics and the critical dimensions of photonics. We present an all-plasmonic 116-gigabits per second electro-optical modulator in which all the elements-the vertical grating couplers, splitters, polarization rotators, and active section with phase shifters-are included in a single metal layer. The device can be realized on any smooth substrate surface and operates with low energy consumption. Our results show that plasmonics is indeed a viable path to an ultracompact, highest-speed, and low-cost technology that might find many applications in a wide range of fields of sensing and communications because it is compatible with and can be placed on a wide variety of materials.

Ultracompact Silicon-Conductive Oxide Nanocavity Modulator with 0.02 Lambda-Cubic Active Volume

Silicon photonic modulators rely on the plasma dispersion effect by free-carrier injection or depletion, which can only induce moderate refractive index perturbation. Therefore, the size and energy efficiency of silicon photonic modulators are ultimately limited as they are also subject to the diffraction limit. Here we report an ultracompact electro-optic modulator with total device footprint of 0.6 × 8 μm² by integrating voltage-switched transparent conductive oxide with one-dimensional silicon photonic crystal nanocavity. The active modulation volume is only 0.06 um³, which is less than 2% of the lambda-cubic volume. The device operates in the dual mode of cavity resonance and optical absorption by exploiting the refractive index modulation from both the conductive oxide and the silicon waveguide induced by the applied gate voltage. Such a metal-free, hybrid silicon-conductive oxide nanocavity modulator also demonstrates only 0.5 dB extra optical loss, moderate Q-factor above 1000, and high energy efficiency of 46 fJ/bit. The combined results achieved through the holistic design opened a new route for the development of next generation electro-optic modulators that can be used for future on-chip optical interconnects.

Localized Surface Plasmon Resonance in Semiconductor Nanocrystals

Localized surface plasmon resonance (LSPR) in semiconductor nanocrystals (NCs) that results in resonant absorption, scattering, and near field enhancement around the NC can be tuned across a wide optical spectral range from visible to far-infrared by synthetically varying doping level, and post synthetically via chemical oxidation and reduction, photochemical control, and electrochemical control. In this review, we will discuss the fundamental electromagnetic dynamics governing light matter interaction in plasmonic semiconductor NCs and the realization of various distinctive physical properties made possible by the advancement of colloidal synthesis routes to such NCs. Here, we will illustrate how free carrier dielectric properties are induced in various semiconductor materials including metal oxides, metal chalcogenides, metal nitrides, silicon, and other materials. We will highlight the applicability and limitations of the Drude model as applied to semiconductors considering the complex band structures and crystal structures that predominate and quantum effects that emerge at nonclassical sizes. We will also emphasize the impact of dopant hybridization with bands of the host lattice as well as the interplay of shape and crystal structure in determining the LSPR characteristics of semiconductor NCs. To illustrate the discussion regarding both physical and synthetic aspects of LSPR-active NCs, we will focus on metal oxides with substantial consideration also of copper chalcogenide NCs, with select examples drawn from the literature on other doped semiconductor materials. Furthermore, we will discuss the promise that LSPR in doped semiconductor NCs holds for a wide range of applications such as infrared spectroscopy, energy-saving technologies like smart windows and waste heat management, biomedical applications including therapy and imaging, and optical applications like two photon upconversion, enhanced luminesence, and infrared metasurfaces.

Excitation of epsilon-near-zero resonance in ultra-thin indium tin oxide shell embedded nanostructured optical fiber

We report a novel optical waveguide design of a hollow step index fiber modified with a thin layer of indium tin oxide (ITO). We show an excitation of highly confined waveguide mode in the proposed fiber near the wavelength where permittivity of ITO approaches zero. Due to the high field confinement within thin ITO shell inside the fiber, the epsilon-near-zero (ENZ) mode can be characterized by a peak in modal loss of the hybrid waveguide. Our results show that such in-fiber excitation of ENZ mode is due to the coupling of the guided core mode to the thin-film ENZ mode. We also show that the phase matching wavelength, where the coupling takes place, varies depending on the refractive index of the constituents inside the central bore of the fiber. These ENZ nanostructured optical fibers have many potential applications, for example, in ENZ nonlinear and magneto-optics, as in-fiber wavelength-dependent filters, and as subwavelength fluid channel for optical and bio-photonic sensing.

A Solution-Processed Ultrafast Optical Switch Based on a Nanostructured Epsilon-Near-Zero Medium

All the optical properties of materials are derived from dielectric function. In spectral region where the dielectric permittivity approaches zero, known as epsilon-near-zero (ENZ) region, the propagating light within the material attains a very high phase velocity, and meanwhile the material exhibits strong optical nonlinearity. The interplay between the linear and nonlinear optical response in these materials thus offers unprecedented pathways for all-optical control and device design. Here the authors demonstrate ultrafast all-optical modulation based on a typical ENZ material of indium tin oxide (ITO) nanocrystals (NCs), accessed by a wet-chemistry route. In the ENZ region, the authors find that the optical response in these ITO NCs is associated with a strong nonlinear character, exhibiting sub-picosecond response time (corresponding to frequencies over 2 THz) and modulation depth up to ≈160%. This large optical nonlinearity benefits from the highly confined geometry in addition to the ENZ enhancement effect of the ITO NCs. Based on these ENZ NCs, the authors successfully demonstrate a fiber optical switch that allows switching of continuous laser wave into femtosecond laser pulses. Combined with facile processibility and tunable optical properties, these solution-processed ENZ NCs may offer a scalable and printable material solution for dynamic photonic and optoelectronic devices.

Controlling hybrid nonlinearities in transparent conducting oxides via two-colour excitation

Nanophotonics and metamaterials have revolutionized the way we think about optical space (ε,μ), enabling us to engineer the refractive index almost at will, to confine light to the smallest of the volumes, and to manipulate optical signals with extremely small footprints and energy requirements. Significant efforts are now devoted to finding suitable materials and strategies for the dynamic control of the optical properties. Transparent conductive oxides exhibit large ultrafast nonlinearities under both interband and intraband excitations. Here we show that combining these two effects in aluminium-doped zinc oxide via a two-colour laser field discloses new material functionalities. Owing to the independence of the two nonlinearities, the ultrafast temporal dynamics of the material permittivity can be designed by acting on the amplitude and delay of the two fields. We demonstrate the potential applications of this novel degree of freedom by dynamically addressing the modulation bandwidth and optical spectral tuning of a probe optical pulse.

Metamaterials have enabled the tailored engineering of optical properties. Here, Clerici et al. show that independent interband and intraband nonlinearities in transparent conducting oxides allow dynamic optical control of the real and imaginary parts of the refractive index.

Nanoscale modeling of electro-plasmonic tunable devices for modulators and metasurfaces

The interest in plasmonic electro-optical modulators with nanoscale footprint and ultrafast low-energy performance has generated a demand for precise multiphysics modeling of the electrical and optical properties of plasmonic nanostructures. We perform combined simulations that account for the interaction of highly confined nearfields with charge accumulation and depletion on the nanoscale. Validation of our numerical model is done by comparison to a recently published reflective meta-absorber. The simulations show excellent agreement to the experimental mid-infrared data. We then use our model to propose electro-optical modulation of the extinction cross-section of a gold dimer nanoantenna at the telecom wavelength of 1550 nm. An ITO gap-loaded nanoantenna structure allows us to achieve a normalized modulation of 45% at 1550 nm, where the gap-load design circumvents resonance pinning of the structure. Resonance pinning limits the performance of simplistic designs such as a uniform coating of the nanoantenna with a sheet of indium tin oxide, which we also present for comparison. This large value is reached by a reduction of the capacitive coupling of the antenna arms, which breaks the necessity of a large volume overlap between the charge distribution and the optical nearfield. A parameter exploration shows a weak reliance on the exact device dimensions, as long as strong coupling inside the antenna gap is ensured. These results open the way for a new method in electro-optical tuning of plasmonic structures and can readily be adapted to plasmonic waveguides, metasurfaces and other electro-optical modulators.

Graphene-based near-field optical microscopy: high-resolution imaging using reconfigurable gratings

High-resolution and fast-paced optical microscopy is a requirement for current trends in biotechnology and materials industry. The most reliable and adaptable technique so far to obtain higher resolution than conventional microscopy is near-field scanning optical microscopy (NSOM), which suffers from a slow-paced nature. Stemming from the principles of diffraction imaging, we present fast-paced graphene-based scanning-free wide-field optical microscopy that provides image resolution that competes with NSOM. Instead of spatial scanning of a sharp tip, we utilize the active reconfigurable nature of graphene's surface conductivity to vary the diffraction properties of a planar digitized atomically thin graphene sheet placed in the near field of an object. Scattered light through various realizations of gratings is collected at the far-field distance and postprocessed using a transmission function of surface gratings developed on the principles of rigorous coupled wave analysis. We demonstrate image resolutions of the order of λ₀/16 using computational measurements through binary graphene gratings and numerical postprocessing. We also present an optimization scheme based on the genetic algorithm to predesign the unit cell structure of the gratings to minimize the complexity of postprocessing methods. We present and compare the imaging performance and noise tolerance of both grating types. While the results presented in this article are at terahertz frequencies (λ₀=10  μm), where graphene is highly plasmonic, the proposed microscopy principle can be readily extended to any frequency regime subject to the availability of tunable materials.

Active directional switching of surface plasmon polaritons using a phase transition material

Active switching of near-field directivity, which is an essential functionality for compact integrated photonics and small optoelectronic elements, has been challenging due to small modulation depth and complicated fabrication methods for devices including active optical materials. Here, we theoretically and experimentally realize a nanoscale active directional switching of surface plasmon polaritons (SPPs) using a phase transition material for the first time. The SPP switching device with noticeable distinction is demonstrated based on the phase transition of vanadium dioxide (VO₂) at the telecom wavelength. As the insulator-to-metal phase transition (IMT) of VO₂ induces the large change of VO₂ permittivity at telecom wavelengths, the plasmonic response of a nanoantenna made of VO₂ can be largely tuned by external thermal stimuli. The VO₂-insulator-metal (VIM) nanoantenna and its periodic array, the VIM metagrating, are suggested as optical switches. The directional power distinction ratio is designed to change from 8.13:1 to 1:10.56 by the IMT and it is experimentally verified that the ratio changes from 3.725:1 to 1:3.132 as the VIM metagratings are heated up to 90 °C. With an electro-thermally controllable configuration and an optimized resonant design, we expect potential applications of the active switching mechanism for integrable active plasmonic elements and reconfigurable imaging.