Independently switchable atomic quantum transistors by reversible contact reconstruction

Atomic switches of metallic point contacts by plasmonic heating

Electronic switches with nanoscale dimensions satisfy an urgent demand for further device miniaturization. A recent heavily investigated approach for nanoswitches is the use of molecular junctions that employ photochromic molecules that toggle between two distinct isoforms. In contrast to the reports on this approach, we demonstrate that the conductance switch behavior can be realized with only a bare metallic contact without any molecules under light illumination. We demonstrate that the conductance of bare metallic quantum contacts can be reversibly switched over eight orders of magnitude, which substantially exceeds the performance of molecular switches. After the switch process, the gap size between two electrodes can be precisely adjusted with subangstrom accuracy by controlling the light intensity or polarization. Supported by simulations, we reveal a more general and straightforward mechanism for nanoswitching behavior, i.e., atomic switches can be realized by the expansion of nanoelectrodes due to plasmonic heating.

Quasi-Solid-State Single-Atom Transistors

The single-atom transistor represents a quantum electronic device at room temperature, allowing the switching of an electric current by the controlled and reversible relocation of one single atom within a metallic quantum point contact. So far, the device operates by applying a small voltage to a control electrode or "gate" within the aqueous electrolyte. Here, the operation of the atomic device in the quasi-solid state is demonstrated. Gelation of pyrogenic silica transforms the electrolyte into the quasi-solid state, exhibiting the cohesive properties of a solid and the diffusive properties of a liquid, preventing the leakage problem and avoiding the handling of a liquid system. The electrolyte is characterized by cyclic voltammetry, conductivity measurements, and rotation viscometry. Thus, a first demonstration of the single-atom transistor operating in the quasi-solid-state is given. The silver single-atom and atomic-scale transistors in the quasi-solid-state allow bistable switching between zero and quantized conductance levels, which are integer multiples of the conductance quantum G₀  = 2e² /h. Source-drain currents ranging from 1 to 8 µA are applied in these experiments. Any obvious influence of the gelation of the aqueous electrolyte on the electron transport within the quantum point contact is not observed.

Macro-mechanics controls quantum mechanics: mechanically controllable quantum conductance switching of an electrochemically fabricated atomic-scale point contact

Here, we present a silver atomic-scale device fabricated and operated by a combined technique of electrochemical control (EC) and mechanically controllable break junction (MCBJ). With this EC-MCBJ technique, we can perform mechanically controllable bistable quantum conductance switching of a silver quantum point contact (QPC) in an electrochemical environment at room temperature. Furthermore, the silver QPC of the device can be controlled both mechanically and electrochemically, and the operating mode can be changed from 'electrochemical' to 'mechanical', which expands the operating mode for controlling QPCs. These experimental results offer the perspective that a silver QPC may be used as a contact for a nanoelectromechanical relay.

Copper Nanowires through Oriented Mesoporous Silica: A Step towards Protected and Parallel Atomic Switches

The formation of copper atomic contacts has been investigated. Copper nanowires were grown by electrochemical deposition, in the scanning electrochemical microscopy (SECM) configuration, from a platinum microelectrode to an indium tin oxide (ITO) substrate. Self-termination leaves copper filaments between the two electrodes with an atomic point contact at the ITO electrode. Histogram analysis shows that the conductance of this contact is close to, or less than, 1 G0. Atomic contacts were also fabricated on ITO electrodes covered with vertically-aligned mesoporous silica films. Scanning Transmission Electron Microscopy images show that copper filaments occupy individual isolated nanopores. Contacts generated on bare ITO break down rapidly in sodium salicylate, whereas those generated in ITO/nanopores are unaffected; the nanopores protect the copper filaments. Finally, atomic switch behaviour was obtained using these ITO and ITO/nanopores electrodes.

Copper atomic-scale transistors

We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO4 + H2SO4) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and -170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes (Ubias) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1G0 (G0 = 2e2/h; with e being the electron charge, and h being Planck's constant) or 2G0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.

Single-Atom Switches and Single-Atom Gaps Using Stretched Metal Nanowires

Utilizing individual atoms or molecules as functional units in electronic circuits meets the increasing technical demands for the miniaturization of traditional semiconductor devices. To be of technological interest, these functional devices should be high-yield, consume low amounts of energy, and operate at room temperature. In this study, we developed nanodevices called quantized conductance atomic switches (QCAS) that satisfy these requirements. The QCAS operates by applying a feedback-controlled voltage to a nanoconstriction within a stretched nanowire. We demonstrated that individual metal atoms could be removed from the nanoconstriction and that the removed metal atoms could be refilled into the nanoconstriction, thus yielding a reversible quantized conductance switch. We determined the key parameters for the QCAS between the "on" and "off" states at room temperature under a small operating voltage. By controlling the applied bias voltage, the atoms can be further completely removed from the constriction to break the nanowire, generating single-atom nanogaps. These atomic nanogaps are quite stable under a sweeping voltage and can be readjusted with subangstrom accuracy, thus fulfilling the requirement of both reliability and flexibility for the high-yield fabrication of molecular devices.

Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours

We present 'unusual' resistive switching behaviours in electrochemical metallization (ECM) cells utilizing a dual-layer (SiOx/GeSex: SiOx on GeSex) solid electrolyte (SE). The observed switching behaviour markedly varies with the thickness of the upper SiOx layer and compliance current: (i) monostable switching, (ii) counter-eightwise bipolar switching, and (iii) combination of monostable and eightwise bipolar switching behaviours. Focusing on cases (i) and (iii), electrical and chemical analyses on these chameleonic cells were performed in an attempt to gain clues to the understanding of the observed complexity. The chemical analysis indicated the upper SiOx layer as a chemical potential well for Cu ions-Cu ions were largely confined in the well. This non-uniform distribution of Cu across the SE perhaps hints at the mechanism for the complex behaviour; it may be a 'zero-sum game' between SiOx and GeSex layers, in which the two layers fight over the limited number of Cu atoms/ions.

Potential-dependent restructuring and chemical noise at Au-Ag-Au atomic scale junctions

The effect of electrochemical potential on the behavior of electrochemically deposited Au-Ag-Au bimetallic atomic scale junctions (ASJs) is addressed here. A common strategy for ASJ production begins with overgrown nanojunctions and uses electromigration to back-thin the junction. Here, these steps are carried out with the entire junction under electrochemical potential control, and the relationship between junction stability and applied potential is characterized. The control of electrochemical potential provides a reliable method of regulating the size of nanojunctions. In general, more anodic potentials decrease junction stability and increase the rate at which conductance decays. Conductance behavior under these labile conditions is principally determined by Ag oxidation potential, electrochemical potential-induced surface stress, and the nature of the adsorbate. Junctions fabricated at more cathodic potentials experience only slight changes in conductance, likely due to surface atom diffusion and stress-induced structural rearrangement. Electrochemical potential also plays a significant role in determining adsorption-desorption kinetics of surface pyridine at steady state at Au-Ag-Au ASJs, as revealed through fluctuation spectroscopy. Average cutoff frequencies increase at more anodic potentials, as does the width of the cutoff frequency distribution measured over 80 independent runs. Three reversible reactions--pyridine adsorption, Ag atom desorption, and Ag-pyridine complex dissolution--can occur on the surface, and the combination of the three can explain the observed results.

A current-driven single-atom memory

The possibility of fabricating electronic devices with functional building blocks of atomic size is a major driving force of nanotechnology. The key elements in electronic circuits are switches, usually realized by transistors, which can be configured to perform memory operations. Electronic switches have been miniaturized all the way down to the atomic scale. However, at such scales, three-terminal devices are technically challenging to implement. Here we show that a metallic atomic-scale contact can be operated as a reliable and fatigue-resistant two-terminal switch. We apply a careful electromigration protocol to toggle the conductance of an aluminium atomic contact between two well-defined values in the range of a few conductance quanta. Using the nonlinearities of the current-voltage characteristics caused by superconductivity in combination with molecular dynamics and quantum transport calculations, we provide evidence that the switching process is caused by the reversible rearrangement of single atoms. Owing to its hysteretic behaviour with two distinct states, this two-terminal switch can be used as a non-volatile information storage element.

Reversible mechano-electrochemical writing of metallic nanostructures with the tip of an atomic force microscope

We recently introduced a method that allows the controlled deposition of nanoscale metallic patterns at defined locations using the tip of an atomic force microscope (AFM) as a "mechano-electrochemical pen", locally activating a passivated substrate surface for site-selective electrochemical deposition. Here, we demonstrate the reversibility of this process and study the long-term stability of the resulting metallic structures. The remarkable stability for more than 1.5 years under ambient air without any observable changes can be attributed to self-passivation. After AFM-activated electrochemical deposition of copper nanostructures on a polycrystalline gold film and subsequent AFM imaging, the copper nanostructures could be dissolved by reversing the electrochemical potential. Subsequent AFM-tip-activated deposition of different copper nanostructures at the same location where the previous structures were deleted, shows that there is no observable memory effect, i.e., no effect of the previous writing process on the subsequent writing process. Thus, the four processes required for reversible information storage, "write", "read", "delete" and "re-write", were successfully demonstrated on the nanometer scale.

Lifetime analysis of individual-atom contacts and crossover to geometric-shell structures in unstrained silver nanowires

We study the crossover of quantum point contacts from (i) individual-atom contacts to (ii) electronic-shell effects and finally to (iii) geometric-shell effects in electrochemically deposited silver contacts. The method allows the fabrication of mechanically unstrained structures, which is a requirement for determining the individual atomic configuration by means of a detailed lifetime analysis of their conductance. Within the geometric-shell model, the sequence of conductance maxima is explained quantitatively based on the crystal structure data of silver, and the growth mechanism of the nanowires is discussed.

The atomic force microscope as a mechano-electrochemical pen

We demonstrate a method that allows the controlled writing of metallic patterns on the nanometer scale using the tip of an atomic force microscope (AFM) as a "mechano-electrochemical pen". In contrast to previous experiments, no voltage is applied between the AFM tip and the sample surface. Instead, a passivated sample surface is activated locally due to lateral forces between the AFM tip and the sample surface. In this way, the area of tip-sample interaction is narrowly limited by the mechanical contact between tip and sample, and well-defined metallic patterns can be written reproducibly. Nanoscale structures and lines of copper were deposited, and the line widths ranged between 5 nm and 80 nm, depending on the deposition parameters. A procedure for the sequential writing of metallic nanostructures is introduced, based on the understanding of the passivation process. The mechanism of this mechano-electrochemical writing technique is investigated, and the processes of site-selective surface depassivation, deposition, dissolution and repassivation of electrochemically deposited nanoscale metallic islands are studied in detail.

Heteronanojunctions with atomic size control using a lab-on-chip electrochemical approach with integrated microfluidics

A versatile tool for electrochemical fabrication of heteronanojunctions with nanocontacts made of a few atoms and nanogaps of molecular spacing is presented. By integrating microfluidic circuitry in a lab-on-chip approach, we keep control of the electrochemical environment in the vicinity of the nanojunction and add new versatility for exchanging and controlling the junction's medium. Nanocontacts made of various materials by successive local controlled depositions are demonstrated, with electrical properties revealing sizes reaching a few atoms only. Investigations on benchmark molecular electronics material, trapped between electrodes, reveal the possibility to create nanogaps of size matching those of molecules. We illustrate the interest of a microfluidic approach by showing that exposure of a fabricated molecular junction to controlled high solvent flows can be used as a reliability criterion for the presence of molecular entities in a gap.

Conductive path formation in the Ta₂O₅ atomic switch: first-principles analyses

The conductive path formed by the interstitial Cu or oxygen vacancies in the Ta(2)O(5) atomic switch were investigated in detail by first-principles methods. The calculated results indicated that the defect state induced by the interstitial Cu is located just at the Fermi level of the Cu and Pt electrodes in the Cu/Ta(2)O(5)/Pt heterostructure and that a conduction channel is formed in the Ta(2)O(5) film via the interstitial Cu. On the other hand, oxygen vacancies in Ta(2)O(5) do not form such a conduction channel because of the lower energy positions of their defect states. The above results suggest that the conductive path could be formed by interstitial Cu in the Ta(2)O(5) atomic switch, whereas the oxygen vacancies do not contribute to the formation of the conductive path.

Electrochemical control of stability and restructuring dynamics in Au-Ag-Au and Au-Cu-Au bimetallic atom-scale junctions

Metallic atom-scale junctions (ASJs) are interesting fundamentally because they support ballistic transport, characterized by conduction quantized in units of G(0) = 2e(2)/h. They are also of potential practical interest since ASJ conductance is extraordinarily sensitive to molecular adsorption. Monometallic Au ASJs were previously fabricated electrochemically using an I(-)/I(3)(-) medium and a unique open working electrode configuration to produce slow electrodeposition or electrodissolution, resulting in reproducible ASJs with limiting conductance <5 G(0). Here, bimetallic Au-Cu-Au and Au-Ag-Au ASJ structures are obtained by electrochemical deposition/dissolution of Cu and Ag in K(2)SO(4) supporting electrolyte. The ASJs are fabricated in Si(3)N(4)-protected Au nanogaps obtained by focused ion beam milling, a protocol which yields repeatable and reproducible Au-Cu-Au or Au-Ag-Au ASJs without damaging the Au nanogap substrates. While Au-Ag-Au ASJs are relatively stable (hours) at open circuit potential in the supporting electrolyte, Au-Cu-Au ASJs exhibit spontaneous restructuring dynamics, characterized by monotonic, stepwise decreases in conductance under the same conditions. However, the Au-Cu-Au ASJs can be stabilized by applying sufficiently negative potentials. Hydrogen adsorption and shifts in the Fermi level are possible reasons for the enhanced stability of Au-Cu-Au structures at large negative overpotentials. In light of these observations, it is possible to integrate ASJs in microfluidic devices as renewable, nanostructured sensing elements for chemical detection.

A nanoelectromechanical single-atom switch

We have exploited the electromechanical properties of gated mechanical break junctions to form single-atom relays. The gate voltage can be used to reversibly switch between a monatomic contact with a conductance around 2e(2)/h and the tunneling regime. In tunneling, the source-drain conductance varies smoothly with gate voltage. The characteristics of the devices can be understood within a simple continuum model. It indicates that the elastic properties of the substrate facilitate the electromechanical tuning and that the details of the switching depend sensitively on the nanoscale geometry of the electrode tips.