Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes

High-Throughput Manufacturing of Multimodal Epidermal Mechanosensors with Superior Detectability Enabled by a Continuous Microcracking Strategy

Non-invasive human-machine interactions (HMIs) are expected to be promoted by epidermal tactile receptive devices that can accurately perceive human activities. In reality, however, the HMI efficiency is limited by the unsatisfactory perception capability of mechanosensors and the complicated techniques for device fabrication and integration. Herein, a paradigm is presented for high-throughput fabrication of multimodal epidermal mechanosensors based on a sequential "femtosecond laser patterning-elastomer infiltration-physical transfer" process. The resilient mechanosensor features a unique hybrid sensing layer of rigid cellular graphitic flakes (CGF)-soft elastomer. The continuous microcracking of CGF under strain enables a sharp reduction in conductive pathways, while the soft elastomer within the framework sustains mechanical robustness of the structure. As a result, the mechanosensor achieves an ultrahigh sensitivity in a broad strain range (GF of 371.4 in the first linear range of 0-50%, and maximum GF of 8922.6 in the range of 61-70%), a low detection limit (0.01%), and a fast response/recovery behavior (2.6/2.1 ms). The device also exhibits excellent sensing performances to multimodal mechanical stimuli, enabling high-fidelity monitoring of full-range human motions. As proof-of-concept demonstrations, multi-pixel mechanosensor arrays are constructed and implemented in a robot hand controlling system and a security system, providing a platform toward efficient HMIs.

Enhancing the Resistive Switching Behavior of WORM Memory Devices Using D-π-A Based Ester-Flanked Quinolines

Donor-Acceptor systems are highly appreciated in the field of organic memory devices due to their efficient charge transport within the systems. In this work, we have designed and synthesized a D-π-A system constituting ester-flanked quinolines and functionalized triarylamines (TAA) through a single-step cross-coupling reaction to fabricate memory devices via Write-Once Read-Many times (WORM) non-volatile memory. Structure-property relationships are reconnoitered for these conjugated D-π-A systems through a series of UV, fluorescence, XRD, DFT, and memory characterizations. The UV and CV data show efficient charge transfer with intramolecular charge transfer occurring at 407-417 nm and a short band gap of 2.56-2.65 eV. An enhancement in the resistive switching behavior of the memory devices is observed for the compounds with simple TAA-quinoline and tert-butylphenyl substituted TAA and fluorophenyl substituted quinoline due to balanced charge distribution in the compounds. This enhanced switching induces an on/off ratio of 10³ by generating a highly ordered arrangement in the thin films. The HOMO, LUMO levels, and the ESP images together estimate a charge transfer and charge trapping as the plausible mechanism for the solution-processable WORM memory devices. The longer retention time (10³  s) and lower threshold voltages (-1.21--2.12 V) of the devices makes them intriguing compounds for memory applications.

Ultrafast Electron Transfer Dynamics of Organic Polymer Nanoparticles with Graphene Oxide

We prepared organic polymer poly-3-hexylthiophene (p3ht) nanoparticles (NPs) and graphene oxide (GO)/reduced graphene oxide (RGO) composites p3ht NPs-GO/RGO by using the reprecipitation method. We demonstrated that GO/RGO could improve the ordering and planarity of p3ht chains as well as the formation of p3ht NPs, and confirmed the effects of GO/RGO on the fluorescence and carrier transport dynamics of p3ht NPs by using femtosecond fluorescence upconversion and transient absorption (TA) techniques. Ultrafast electron transfer (∼1 ps) between GO/RGO and p3ht NPs quenched the fluorescence of p3ht NPs, indicating excellent properties of p3ht NPs-GO/RGO as the charge transfer complexes. Efficient electron transfer may promote the applications of p3ht NPs-GO/RGO composites in organic polymer solar cells and photocatalysis. Moreover, RGO had stronger interfacial interactions and more matched conduction band energy levels with p3ht NPs than GO did, which implied that p3ht NPs-RGO might have greater application values than p3ht NPs-GO.

Improved Self-Assembly of P3HT with Pyrene-Functionalized Methacrylates

A block copolymer with discotic liquid crystalline behavior was synthesized using Grignard metathesis polymerization (GRIM) and initiators for continuous activator regeneration atom transfer radical polymerization (ICAR-ATRP). A novel discotic liquid crystalline mesogen, 6-(pyren-1-yloxy)hexyl methacrylate (PyMA), comprises a block that is attached to regioregular poly(3-hexylthiophene) (rr-P3HT) generated by GRIM and subjected to end-group modification. Due to the continuous regeneration of Cu⁺ in the reaction mixture in ICAR-ATRP compared to conventional methods, the synthesis was successfully performed with less catalyst. The purity and yield of the final product are increased by eliminating rigorous post-synthesis purification. Stacked pyrene units have contributed to the enhanced long-range π-π interactions and aligning of the P3HT block as observed in thin-film X-ray diffraction (XRD). Furthermore, field-effect mobilities in the order of 10^-2 cm² V^-1 s^-1 in bottom-gate, top-contact organic field-effect transistors (OFETs) suggest an enhancement in charge transport due to the discotic electron-rich pyrene units that help mitigate the insulating effect of the methacrylate backbone. The formation of uniform microdomains of P3HT-b-poly(PyMA) observed with tapping mode atomic force microscopy (TMAFM) on the channel regions of OFETs indicates the unique packing of the block copolymer in comparison to pristine P3HT. Thermotropic properties of the novel discotic mesogen in the presence and absence of P3HT were observed with both the poly(3-hexylthiophene)-b-poly(6-(pyren-1-yloxy)hexyl methacrylate) (P3HT-b-poly(PyMA)) block copolymer and poly(6-(pyren-1-yloxy)hexyl methacrylate) (poly(PyMA)) homopolymer using polarized optical microscopy (POM) and differential scanning calorimetry (DSC).

Signal Filtering Enabled by Spike Voltage-Dependent Plasticity in Metalloporphyrin-Based Memristors

Neural systems can selectively filter and memorize spatiotemporal information, thus enabling high-efficient information processing. Emulating such an exquisite biological process in electronic devices is of fundamental importance for developing neuromorphic architectures with efficient in situ edge/parallel computing, and probabilistic inference. Here a novel multifunctional memristor is proposed and demonstrated based on metalloporphyrin/oxide hybrid heterojunction, in which the metalloporphyrin layer allows for dual electronic/ionic transport. Benefiting from the coordination-assisted ionic diffusion, the device exhibits smooth, gradual conductive transitions. It is shown that the memristive characteristics of this hybrid system can be modulated by altering the metal center for desired metal-oxygen bonding energy and oxygen ions migration dynamics. The spike voltage-dependent plasticity stemming from the local/extended movement of oxygen ions under low/high voltage is identified, which permits potentiation and depression under unipolar different positive voltages. As a proof-of-concept demonstration, memristive arrays are further built to emulate the signal filtering function of the biological visual system. This work demonstrates the ionic intelligence feature of metalloporphyrin and paves the way for implementing efficient neural-signal analysis in neuromorphic hardware.

Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heterojunction with inorganic ZnO protective layer. The prepared memory device has consistent DC endurance (500 cycles), retention properties (104 s), high ON/OFF ratio (105), and environmental stability. The observation of bipolar resistive switching is attributed to creation and rupture of the Ag filament. In addition, our conductive bridge random access memory (CBRAM) device has adequate regulation of the current compliance leads to multilevel resistive switching of a high data density storage.

Solution-Processable 2D Polymer/Graphene Oxide Heterostructure for Intrinsic Low-Current Memory Device

Suppressing the operating current in resistive memory devices is an effective strategy to minimize their power consumption. Herein, we present an intrinsic low-current memory based on two-dimensional (2D) hybrid heterostructures consisting of partly reduced graphene oxide (p-rGO) and conjugated microporous polymer (CMP) with the merits of being solution-processed, large-scale, and well patterned. The device with the heterostructure of p-rGO/CMP sandwiched between highly reduced graphene oxide (h-rGO) and aluminum electrodes exhibited rewritable and nonvolatile memory behavior with an ultralow operating current (∼1 μA) and efficient power consumption (∼2.9 μW). Moreover, the on/off current ratio is over 10³, and the retention time is up to 8 × 10³ s, indicating the low misreading rate and high stability of data storage. So far, the value of power is about 10 times lower than those of the previous GO-based memories. The bilayer architecture provides a promising approach to construct intrinsic low-power resistive memory devices.

Large Area, Multilayer Graphene Films as a Flexible Electronic Material

Chemically reduced graphene oxide possesses unique properties and leads to a secure processing method for many applications. The electrical and optical properties of graphene oxide are strongly dependent on the chemical and atomic structure. In the present work, the reduction of synthesized multilayer graphene oxide sheets by both chemical and thermal methods to use them as a substrate in the field of molecular electronic device fabrication is reported. 1-Dodecanethiol molecules are used to covalently bond on the surface atoms of reduced graphene oxide to constitute molecular electronic devices. The metal-organic molecules-reduced graphene oxide-metal junctions show a significant reduction in current levels and weak diode behavior. The observations confirm the tunneling as the conduction mechanism. The sheets are low cost, highly flexible, and can be used as a substrate to build the molecular electronic junctions.

Fabrication and characterization of SiC/Ge/graphene heterojunction with Ge micro-nano structures

To widen the detection wavelength range and improve the detection sensitivity of SiC-based optoelectronic devices, the SiC/Ge/graphene heterojunction was fabricated by using wet transfer of the graphene following chemical vapor deposition. The Ge films on 4H-SiC(0001) have polycrystalline structure with nano-wire (NWs) and submicron spherical island (SIs) features. Due to the distinct light trapping effect of the Ge NWs, the SiC/GeNWs/graphene heterojunction has an absorbance of more than 90% in the 500-1600 nm range, which is higher than the SiC/GeSIs/graphene heterojunction. And the SiC/GeNWs/graphene heterojunction photodetector exhibits rectification ratio up to 25 at ±2 V and stable photoresponse to the NIR light at zero voltage bias.

High-performance non-volatile resistive switching memory based on a polyimide/graphene oxide nanocomposite

Chemical structure of PI-GO, schematic structure of the ITO/PI-GO/Al device and its memory characteristics.

Ultrasensitive Anti-Interference Voice Recognition by Bio-Inspired Skin-Attachable Self-Cleaning Acoustic Sensors

Human voice recognition systems (VRSs) are a prerequisite for voice-controlled human-machine interfaces (HMIs). In order to avoid interference from unexpected background noises, skin-attachable VRSs are proposed to directly detect physiological mechanoacoustic signals based on the vibrations of vocal cords. However, the sensitivity and response time of existing VRSs are bottlenecks for efficient HMIs. In addition, water-based contaminants in our daily lives, such as skin moisture and raindrops, normally result in performance degradation or even functional failure of VRSs. Herein, we present a skin-attachable self-cleaning ultrasensitive and ultrafast acoustic sensor based on a reduced graphene oxide/polydimethylsiloxane composite film with bioinspired microcracks and hierarchical surface textures. Benefitting from the synergetic effect of the spider-slit-organ-like multiscale jagged microcracks and the lotus-leaf-like hierarchical structures, our superhydrophobic VRS exhibits an ultrahigh sensitivity (gauge factor, GF = 8699), an ultralow detection limit (ε = 0.000 064%), an ultrafast response/recovery behavior, an excellent device durability (>10 000 cycles), and reliable detection of acoustic vibrations over the audible frequency range (20-20 000 Hz) with high signal-to-noise ratios. These superb performances endow our skin-attachable VRS with anti-interference perception of human voices with high precision even in noisy environments, which will expedite the voice-controlled HMIs.

Graphene oxide/nanometal composite membranes for nanofiltration: synthesis, mass transport mechanism, and applications

We reviewed the recent developments in graphene-based composite membranes and discussed their challenges in this paper.

Transient and flexible polymer memristors utilizing full-solution processed polymer nanocomposites

Building transient and flexible memristors is a promising strategy for developing emerging memory technologies. Here, a transient and flexible memristor based on a polymer nanocomposite, with a configuration of silver nanowire (AgNW)/citric acid quantum dot (CA QD)-polyvinyl pyrrolidone (PVP)/AgNW, is fabricated using a full-solution process method. The obtained device exhibits reversible resistive switching behavior and a dynamic random access memory (DRAM) storage feature, with the significant merits of a high ON/OFF ratio, low switching voltage, excellent reproducibility and desirable high flexibility, indicating outstanding memory characteristics such as low misreading, low power operation and low cost potential. Moreover, an operating mechanism of charge trapping/de-trapping of the quantum dots in the polymer matrix has been proposed. Importantly, the memristor can be disintegrated in water within 30 minutes, showing that it is a promising candidate for transient memories. This work paves a new way for potential use of this material in transient electronics, implanted electronics, data storage security and flexible electronic systems.

Polymer-carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

A strategy for self-rectifying memory diodes based on a polymer–carbon dot hybrid structure, with a configuration of rGO/PEDOT : PSS/carbon dots/MEH-PPV/Al, has been proposed. The fabricated device exhibits a rectification of 10³ in the rectification model and an ON/OFF current ratio of 121 in the memory model. The rectifying behavior was attributed to an energy level offset between the electrodes and the bilayer polymers and the memory effect was induced by carrier trapping of carbon dots within the polymers.

A strategy for self-rectifying memory diodes based on a polymer–carbon dot hybrid structure, with a configuration of rGO/PEDOT : PSS/carbon dots/MEH-PPV/Al, has been proposed.

Tunable Nonvolatile Memory Behaviors of PCBM-MoS2 2D Nanocomposites through Surface Deposition Ratio Control

Efficient preparation of single-layer two-dimensional (2D) transition metal dichalcogenides, especially molybdenum disulfide (MoS₂), offers readily available 2D surface in nanoscale to template various materials to form nanocomposites with van der Waals heterostructures (vdWHs), opening up a new dimension for the design of functional electronic and optoelectronic materials and devices. Here, we report the tunable memory properties of the facilely prepared [6,6]-phenyl-C₆₁-butyric acid methyl ester (PCBM)-MoS₂ nanocomposites in a conventional diode device structure, where the vdWHs dominate the electric characteristics of the devices for various memory behaviors depending on different surface deposition ratios of PCBM on MoS₂ nanosheets. Both nonvolatile WORM and flash memory devices have been realized using the new developed PCBM-MoS₂ 2D composites. Specially, the flash characteristic devices show rewritable resistive switching with low switching voltages (∼2 V), high current on/off ratios (∼3 × 10²), and superior electrical bistability (>10⁴ s). This research, through successfully allocating massive vdWHs on the MoS₂ surface for organic/inorganic 2D nanocomposites, illustrates the great potential of 2D vdWHs in rectifying the electronic properties for high-performance memory devices and paves a way for the design of promising 2D nanocomposites with electronically active vdWHs for advanced device applications.

Synthesis and non-volatile electrical memory characteristics of triphenylamine-based polyimides with flexibility segments

Two triphenylamine-based polyimides (PI(TPA-PMDA) and PI(TPA-BPDA)) containing a flexibility segments were prepared. The memory device of ITO/PI(TPA-PMDA)/Al exhibited write-once read-many-times (WORM) memory behavior, however, the memory device of PI(TPA-BPDA) demonstrated flash-type memory characteristics.

Bistable electrical switching and nonvolatile memory effects by doping different amounts of GO in poly(9,9-dioctylfluorene-2,7-diyl)

The device shows different conductive behavior: electric bistable nonvolatile flash memory behavior and conductor behavior.

Recent Advances in Ultrathin Two-Dimensional Nanomaterials

Since the discovery of mechanically exfoliated graphene in 2004, research on ultrathin two-dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter physics, material science, chemistry, and nanotechnology. Highlighting their compelling physical, chemical, electronic, and optical properties, as well as their various potential applications, in this Review, we summarize the state-of-art progress on the ultrathin 2D nanomaterials with a particular emphasis on their recent advances. First, we introduce the unique advances on ultrathin 2D nanomaterials, followed by the description of their composition and crystal structures. The assortments of their synthetic methods are then summarized, including insights on their advantages and limitations, alongside some recommendations on suitable characterization techniques. We also discuss in detail the utilization of these ultrathin 2D nanomaterials for wide ranges of potential applications among the electronics/optoelectronics, electrocatalysis, batteries, supercapacitors, solar cells, photocatalysis, and sensing platforms. Finally, the challenges and outlooks in this promising field are featured on the basis of its current development.

The phosphorescence and excitation-wavelength dependent fluorescence kinetics of large-scale graphene oxide nanosheets

In this study, phosphorescence emission and a strong excitation-wavelength dependent fluorescence has been found in large-scale graphene oxide (GO) nanosheets.

One-step and green synthesis of nitrogen-doped carbon quantum dots for multifunctional electronics

A facile one-step and green synthesis of nitrogen-doped CQDs has been developed, the N-doped CQD-based device exhibits multifunctional memory and current limiting behavior.

Resonant tunneling based graphene quantum dot memristors

In this paper, we model two-terminal all graphene quantum dot (GQD) based resistor-type memory devices (memristors). The resistive switching is achieved by resonant electron tunneling. We show that parallel GQDs can be used to create multi-state memory circuits. The number of states can be optimised with additional voltage sources, whilst the noise margin for each state can be controlled by appropriately choosing the branch resistance. A three-terminal GQD device configuration is also studied. The addition of an isolated gate terminal can be used to add further or modify the states of the memory device. The proposed devices provide a promising route towards volatile memory devices utilizing only atomically thin two-dimensional graphene.

Structural Phase Transition Effect on Resistive Switching Behavior of MoS2 -Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices

The 2H phase and 1T phase coexisting in the same molybdenum disulfide (MoS2 ) nanosheets can influence the electronic properties of the materials. The 1T phase of MoS2 is introduced into the 2H-MoS2 nanosheets by two-step hydrothermal synthetic methods. Two types of nonvolatile memory effects, namely write-once read-many times memory and rewritable memory effect, are observed in the flexible memory devices with the configuration of Al/1T@2H-MoS2 -polyvinylpyrrolidone (PVP)/indium tin oxide (ITO)/polyethylene terephthalate (PET) and Al/2H-MoS2 -PVP/ITO/PET, respectively. It is observed that structural phase transition in MoS2 nanosheets plays an important role on the resistive switching behaviors of the MoS2 -based device. It is hoped that our results can offer a general route for the preparation of various promising nanocomposites based on 2D nanosheets of layered transition metal dichalcogenides for fabricating the high performance and flexible nonvolatile memory devices through regulating the phase structure in the 2D nanosheets.

Hierarchical core–shell structure of ZnO nanotube/MnO2 nanosheet arrays on a 3D graphene network as a high performance biosensing platform

A hierarchical core–shell structure composed of ZnO nanotubes/MnO₂ nanosheets was fabricated via a two-step electrochemical deposition procedure on the surface of a 3D graphene network (3DGN) as a free-standing monolithic electrode.

In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density.

Reduced Graphene Oxide/Mesoporous TiO2 Nanocomposite Based Perovskite Solar Cells

We report on reduced graphene oxide (rGO)/mesoporous (mp)-TiO2 nanocomposite based mesostructured perovskite solar cells that show an improved electron transport property owing to the reduced interfacial resistance. The amount of rGO added to the TiO2 nanoparticles electron transport layer was optimized, and their impacts on film resistivity, electron diffusion, recombination time, and photovoltaic performance were investigated. The rGO/mp-TiO2 nanocomposite film reduces interfacial resistance when compared to the mp-TiO2 film, and hence, it improves charge collection efficiency. This effect significantly increases the short circuit current density and open circuit voltage. The rGO/mp-TiO2 nanocomposite film with an optimal rGO content of 0.4 vol % shows 18% higher photon conversion efficiency compared with the TiO2 nanoparticles based perovskite solar cells.

Organic Electronic Memory Devices

With the rapid development of the electronics industry in recent years, information technology devices, such as personal computers, mobile phones, digital cameras and media players, have become an essential part of our daily life. From both the technological and economic points of view, the development of novel information storage materials and devices has become an emergent issue facing the electronics industry. Due to the advantages of good scalability, flexibility, low cost, ease of processing, 3D-stacking capability and high capacity for data storage, organic-based electrical memory devices have been promising alternatives or supplementary devices to conventional inorganic semiconductor-based memory technology. The basic concepts and historical development of electronic memory devices are first presented. The following section introduces the structures and switching mechanisms of organic electronic memory devices classified as transistors, capacitors and resistors. Subsequently, the progress in the field of organic-based memory materials and devices is systematically summarized and discussed. Finally, the challenges posed to the development of novel organic electronic memory devices are summarized.

Adjusting the Proportion of Electron-Withdrawing Groups in a Graft Functional Polymer for Multilevel Memory Performance

A polymer containing aldehyde active groups (PVB) was synthesized by atom transfer radical polymerization (ATRP), acting as a polymer precursor to graft a functional moiety via nucleophilic addition reaction. DHI (2-(1,5-dimethyl-hexyl)-6-hydrazino-benzo[de]isoquinoline-1,3-dione) and NPH (nitrophenyl hydrazine) groups, which contain naphthalimides that act as narrow traps and nitro groups that act as deep traps, were anchored onto the PVB at different ratios. A series of graft polymers were obtained and named PVB-DHI, PVB-DHI4 -NPH, PVB-DHI-NPH4 , and PVB-NPH. The chemical composition of the polymers was analyzed by (1) H-NMR spectroscopy and X-ray photoelectron spectroscopy (XPS). Memory devices were prepared from the polymers, and I-V characteristics were measured to determine the performance. By adjusting the ratio of different electron acceptors (DHI and NPH) to 4:1, ternary memory behavior was achieved. The relationship between memory behavior of PVB-DHIx NPHy and acceptor groups as well as their conduction mechanism were studied in detail.

Highly Stretchable and Conductive Silver Nanoparticle Embedded Graphene Flake Electrode Prepared by In situ Dual Reduction Reaction

The emergence of stretchable devices that combine with conductive properties offers new exciting opportunities for wearable applications. Here, a novel, convenient and inexpensive solution process was demonstrated to prepare in situ silver (Ag) or platinum (Pt) nanoparticles (NPs)-embedded rGO hybrid materials using formic acid duality in the presence of AgNO₃ or H₂PtCl₆ at low temperature. The reduction duality of the formic acid can convert graphene oxide (GO) to rGO and simultaneously deposit the positively charged metal ion to metal NP on rGO while the formic acid itself is converted to a CO₂ evolving gas that is eco-friendly. The AgNP-embedded rGO hybrid electrode on an elastomeric substrate exhibited superior stretchable properties including a maximum conductivity of 3012 S cm^-1 (at 0 % strain) and 322.8 S cm^-1 (at 35 % strain). Its fabrication process using a printing method is scalable. Surprisingly, the electrode can survive even in continuous stretching cycles.

Graphene Anodes and Cathodes: Tuning the Work Function of Graphene by Nearly 2 eV with an Aqueous Intercalation Process

To expand the applications of graphene in optoelectronics and microelectronics, simple and effective doping processes need to be developed. In this paper, we demonstrate an aqueous process that can simultaneously transfer chemical vapor deposition grown graphene from Cu to other substrates and produce stacked graphene/dopant intercalation films with tunable work functions, which differs significantly from conventional doping methods using vacuum evaporation or spin-coating processes. The work function of graphene layers can be tuned from 3.25 to 5.10 eV, which practically covers the wide range of the anode and cathode applications. Doped graphene films in intercalation structures also exhibit excellent transparency and low resistance. The polymer-based solar cells with either low work function graphene as cathodes or high work function graphene as anodes are demonstrated.

Substituent and Charge Transfer Effects on Memory Behavior of the Ambipolar Poly(triphenylamine)s

A series of poly(triphneylamine)s (CN-PTPA, 2CN-PTPA, 3CN-PTPA, and NO2-PTPA) with pendent acceptors (cyano, dicyanovinyl, tricyanovinyl, and nitro) have been readily synthesized by oxidative coupling polymerization using FeCl3 as oxidant. The tunable memory properties of the ITO/polymer/Al sandwiched memory devices including DRAM, SRAM, and WORM could be achieved by introducing substituent acceptors with different extent of electronic delocalization and electron-withdrawing intensity into the poly(triphenylamine)s. The highly fluorescent CN-PTPA exhibited volatile DRAM memory characteristic due to the large band gap and weak intramolecular charge transfer capability. 2CN-PTPA and 3CN-PTPA showed volatile SRAM memory property with retention time of 5 and 14 min, respectively, depending on electron-withdrawing capability of the acceptors. Furthermore, NO2-PTPA afforded nonvolatile WORM memory behavior attributed to the charge could be trapped into the nonconjugated nitro group even though the dipole moment and electron-withdrawing capability of nitro group were weaker than cyanovinyl groups. Moreover, except NO2-PTPA, all the devices derived from cyano-containing ambipolar polymers including CN-PTPA, 2CN-PTPA, and 3CN-PTPA could be switched to the ON state and exhibited WORM memory behavior in positive unipolar I-V switching. This phenomenon indicated that the Al atoms preferentially interact with poly(triphneylamine)s containing cyano than nitro substituents.

Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends

Flexible memory cell array based on high mobility donor-acceptor diketopyrrolopyrrole polymer has been demonstrated. The memory cell exhibits low read voltage, high cell-to-cell uniformity and good mechanical flexibility, and has reliable retention and endurance memory performance. The electrical properties of the memory devices are systematically investigated and modeled. Our results suggest that the polymer blends provide an important step towards high-density flexible nonvolatile memory devices.

Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials

This tutorial review summarizes the recent progress in the rational design and preparation of solution-processed ultrathin 2D nanomaterials for non-volatile resistive memory devices.

Functionalized graphene and other two-dimensional materials for photovoltaic devices: device design and processing

2D materials have been successfully used in various types of solar cells as transparent electrodes, interfacial and active materials.

Facile anionic synthesis of a well-controlled thermally cross-linkable block copolymer for polymer-based resistive memory device applications

A well-defined block copolymer containing a thermally cross-linkable ethynyl group has been synthesized by living anionic polymerization for polymer-based resistive memory device applications.

High performance polymers and their PCBM hybrids for memory device application

Three series of memory devices were prepared from OHTPA-based high-performance polymers and the memory behaviors can be tuned in a wide range by varying the concentration of electron-acceptor PCBM.

Sonochemically synthesized mono and bimetallic Au-Ag reduced graphene oxide based nanocomposites with enhanced catalytic activity

Graphene oxide (GO) supported Ag and Au mono-metallic and Au-Ag bimetallic catalysts were synthesized using a sonochemical method. Bimetallic catalysts containing different weight ratios of Au and Ag were loaded onto GO utilizing a low frequency horn-type ultrasonicator. High frequency ultrasonication was used to efficiently reduce Ag(I) and Au(III) ions in the presence of polyethylene glycol and 2-propanol. Transmission electron microscopy (TEM-EDX) and X-ray photoelectron spectroscopy were used to analyze the morphology, size, shape and chemical oxidation states of the prepared metallic catalysts on GO. The catalytic efficiency of the prepared catalysts were compared using 4-nitrophenol (4-NP) reduction reaction and the subsequent formation of 4-aminophenol (4-AP) that was also monitored using UV-vis spectrophotometry. The results revealed that Au-Ag-GO bimetallic catalysts showed high activity for the conversion of 4-NP to 4-AP than their monometallic counterparts. Amongst different weight ratios (1:1, 1:2 and 2:1) between Au and Ag, the 1:2 (Au:Ag) catalyst exhibited very good catalytic performance for the conversion of 4-NP to 4-AP. A total reduction of 4-NP took place within a short period of time if Au-GO was reduced first followed by Ag reduction, whereas a lower reduction rate was observed if Ag-GO was reduced first. The same trend was observed for all the ratios of bimetallic catalysts prepared by this method. The initial unfavorable reduction potential of Ag(I) is likely to be responsible for the above order. It was found that applying dual frequency ultrasonication was a highly effective way of preparing bimetallic catalysts requiring relatively low levels of added chemicals and producing bimetallic catalysts with GO with improved catalytic efficiency.

Functionalized graphitic carbon nitride for metal-free, flexible and rewritable nonvolatile memory device via direct laser-writing

Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 10(5), which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices.

Negative differential resistance and carrier transport of electrically bistable devices based on poly(N-vinylcarbazole)-silver sulfide composites

An electrically bistable device has been fabricated based on poly(N-vinylcarbazole) (PVK)-silver sulfide (Ag2S) composite films using a simple spin-coating method. Current-voltage (I-V) characteristics of the as-fabricated devices exhibit a typical electrical bistability and negative differential resistance (NDR) effect. The NDR effect can be tuned by varying the positive charging voltage and the charging time. The maximum current ratio between the high-conducting state (ON state) and low-conducting state (OFF state) can reach up to 104. The carrier transport mechanisms in the OFF and ON states are described by using different models on the basis of the experimental result.