Infrared spectroscopy of wafer-scale graphene

Colossal Near-Field Radiative Heat Transfer Mediated by Coupled Polaritons with an Ultrahigh Dynamic Range

Near-field radiative heat transfer (NFRHT) can exceed the blackbody limit by several orders of magnitude owing to the tunneling evanescent waves. Exploiting this near-field enhancement holds significant potential for emerging technologies. It has been suggested that coupled polaritons can give rise to orders of magnitude enhancement of NFRHT. However, a thorough experimental verification of this phenomenon is still missing. Here this work experimentally shows that NFRHT mediated by coupled polaritons in millimeter-size graphene/SiC/SiO2 composite devices in planar plate configuration can realize about 302.8 ±  35.2-fold enhancement with respect to the blackbody limit at a gap distance of 87  ±  0.8 nm. The radiative thermal conductance and effective gap heat transfer coefficient can reach unprecedented values of 0.136 WK-1 and 5440 Wm-2K-1. Additionally, a scattering-type scanning near-field optical measurement, in conjunction with full-wave numerical simulations, provides further evidence for the coupled polaritonic characteristics of the devices. Notably, this work experimentally demonstrates dynamic regulation of NFRHT can be achieved by modulating the bias voltage, leading to an ultrahigh dynamic range of ≈4.115. This work ambiguously elucidates the important role of coupled polaritons in NFRHT, paving the way for the manipulation of nanoscale heat transport, energy conversion, and thermal computing via the strong coupling effect.

Raman spectroscopy and photoluminescence study of PN junction p-graphene/n-GaAs

Single layer graphene (SLG) was synthesized via high-quality chemical vapor deposition (CVD) on high-quality copper and subsequently transferred onto SiO2 and on n-GaAs substrates with varying doping electron concentrations (n = 1016, 1017, 5 × 1017, 1018, and 5 × 1018 cm-3). The n-GaAs substrates were grown by molecular beam epitaxy. The optical properties of the SLG were investigated through photoluminescence (PL) and Raman spectroscopy measurements. Carrier concentration n or p and Fermi energy (EF) values in SLG were determined both before and after the transfer onto n-GaAs, and these findings were validated through PL studies. The Raman spectroscopy results indicated an increase in the transfer of electrons from n-GaAs to SLG as the doping electron density in n-GaAs increased. PL analysis revealed a significant change in the bandgap energy (Eg) of n-GaAs due to bandgap narrowing and the Burstein-Moss shift. Our data enable us to determine the energy band diagrams. Upon aligning the energy bands, an increase in transferred carrier density is accompanied by changes in Fermi energies and an increase in the potential barrier (∆U). The increase in ∆U is of significant interest to ensure that charges are directed more efficiently toward the cell's electrical contacts in the case of photovoltaic application. There, they can contribute significantly to the generated electric current, thereby enhancing the performance of a cell. Our results can provide insights into the interaction in graphene-based heterostructures and aid in selecting the best parameters for developing new advanced devices.

Tunable mid-infrared photodetector based on graphene plasmons controlled by ferroelectric polarization for micro-spectrometer

Surface plasmonic detectors have the potential to be key components of miniaturized chip-scale spectrometers. Graphene plasmons, which are highly confined and gate-tunable, are suitable forin situlight detection. However, the tuning of graphene plasmonic photodetectors typically relies on the complex and high operating voltage based on traditional dielectric gating technique, which hinders the goal of miniaturized and low-power consumption spectrometers. In this work, we report a tunable mid-infrared (MIR) photodetector by integrating of patterned graphene with non-volatile ferroelectric polarization. The polarized ferroelectric thin film provides an ultra-high surface electric field, allowing the Fermi energy of the graphene to be manipulated to the desired level, thereby exciting the surface plasmon polaritons effect, which is highly dependent on the free carrier density of the material. By exciting intrinsic graphene plasmons, the light transmittance of graphene is greatly enhanced, which improves the photoelectric conversion efficiency of the device. Additionally, the electric field on the surface of graphene enhanced by the graphene plasmons accelerates the carrier transfer efficiency. Therefore, the responsivity of the device is greatly improved. Our simulations show that the detectors have a tunable resonant spectral response of 9-14μm by reconstructing the ferroelectric domain and exhibit a high responsivity to 5.67 × 105A W-1at room temperature. Furthermore, we also demonstrate the conceptual design of photodetector could be used for MIR micro-spectrometer application.

Low-Dimensional-Materials-Based Photodetectors for Next-Generation Polarized Detection and Imaging

The vector characteristics of light and the vectorial transformations during its transmission lay a foundation for polarized photodetection of objects, which broadens the applications of related detectors in complex environments. With the breakthrough of low-dimensional materials (LDMs) in optics and electronics over the past few years, the combination of these novel LDMs and traditional working modes is expected to bring new development opportunities in this field. Here, the state-of-the-art progress of LDMs, as polarization-sensitive components in polarized photodetection and even the imaging, is the main focus, with emphasis on the relationship between traditional working principle of polarized photodetectors (PPs) and photoresponse mechanisms of LDMs. Particularly, from the view of constitutive equations, the existing works are reorganized, reclassified, and reviewed. Perspectives on the opportunities and challenges are also discussed. It is hoped that this work can provide a more general overview in the use of LDMs in this field, sorting out the way of related devices for "more than Moore" or even the "beyond Moore" research.

Numerical investigation of a graphene-on-semiconductor device for optical monitoring of cell electrophysiology

Spatially resolved sensing devices for electrostatic potentials are extremely useful for characterization of living cells, however, many current techniques lack the speed necessary to capture spatially resolved, functional information of cells in real-time. Here, an optical sensing technique is proposed based on graphene on a semiconductor stack operating in the near-infrared spectrum. By modeling coherent interference of multiply reflected beam paths within the semiconductor stack, we demonstrate how the device produces a continuous reflectivity change in response to graphene Fermi energy which is ideal for sensing changes in local electrostatic fields produced by action potentials of living cells. By coupling the device with a high-speed camera, we propose this platform will allow for high-speed imaging of action potentials over a large sensing area with micron scale resolution.

Electrically Tunable Nonlinearity at 3.2 Terahertz in Single-Layer Graphene

Graphene is a nonlinear material in the terahertz (THz) frequency range, with χ(3) ∼ 10-9 m2/V2 ∼ 15 orders of magnitude higher than that of other materials used in the THz range, such as GaAs or lithium niobate. This nonlinear behavior, combined with ultrafast dynamic for excited carriers, proved to be essential for third harmonic generation in the sub-THz and low (<2.5 THz) THz range, using moderate (60 kV/cm) fields and at room temperature. Here, we show that, for monochromatic high peak power (1.8 W) input THz signals, emitted by a quantum cascade laser, the nonlinearity can be controlled using an ionic liquid gate that tunes the graphene Fermi energy up to >1.2 eV. Pump and probe experiments reveal an intense absorption nonlinearity at 3.2 THz, with a dominant 3rd-order contribution at EF > 0.7 eV, hence opening intriguing perspectives per engineering novel architectures for light generation at frequencies > 9 THz.

Ultrafast hot-carrier cooling in quasi freestanding bilayer graphene with hydrogen intercalated atoms

Femtosecond-THz optical pump probe spectroscopy is employed to investigate the cooling dynamics of hot carriers in quasi-free standing bilayer epitaxial graphene with hydrogen interacalation. We observe longer decay time constants, in the range of 2.6 to 6.4 ps, compared to previous studies on monolayer graphene, which increase nonlinearly with excitation intensity. The increased relaxation times are due to the decoupling of the graphene layer from the SiC substrate after hydrogen intercalation which increases the distance between graphene and substrate. Furthermore, our measurements show that the supercollision mechanism is not related to the cooling process of the hot carriers, which is ultimately achieved by electron optical phonon scattering.

Enhanced Near-Field Radiative Heat Transfer between Graphene/hBN Systems

Near-field radiative heat transfer (NFRHT) can exceed the blackbody radiation limit owing to the coupled evanescent waves, implying a significant potential for energy conversion and thermal management. Coupled surface plasmon polaritons (SPPs) and hyperbolic phonon polaritons (HPPs) with small ohmic losses enable a long propagation wavelength that is essential in NFRHT. However, so far, there still lacks knowledge about the experimental investigation of the coupling of SPPs and HPPs in terms of NFRHT. In this study, the NFRHT between graphene/hexagonal boron nitride (hBN) systems that can be readily transferred onto various substrates, with a gap space of ≈400 nm is measured. NFRHT enhancements in the order of three and six times higher than the blackbody limit for graphene/hBN heterostructures and graphene/hBN/graphene multilayers, respectively are demonstrated. In addition, the largest ever radiative heat flux using graphene/hBN/graphene multilayers under similar gap space of 400 nm is obtained. Consequently, analyzing the photon tunneling modes reveal that these phenomena are consequences of coupled SPPs of graphene and HPPs of hBN.

Seeding-Layer-Free Deposition of High-k Dielectric on CVD Graphene for Enhanced Gate Control Ability

The gate insulator is one of the most crucial factors determining the performance of a graphene field effect transistor (GFET). Good electrostatic control of the conduction channel by gate voltage requires thin gate oxides. Due to the lack of the dangling bond, a seed layer is usually needed for the gate dielectric film grown by the atomic layer deposition (ALD) process. The seed layer leads to the high-quality deposition of dielectric films, but it may lead to a great increase in the thickness of the final dielectric film. To address this problem, this paper proposes an improved process, where the self-oxidized Al2O3 seed layer was removed by etching solutions before atomic layer deposition, and the Al2O3 residue would provide nucleation sites on the graphene surface. Benefiting from the decreased thickness of the dielectric film, the transconductance of the GFET using this method as a top-gate dielectric film deposition process shows an average 44.7% increase compared with the GFETs using the standard Al evaporation seed layer methods.

Hot carriers in graphene - fundamentals and applications

Hot charge carriers in graphene exhibit fascinating physical phenomena, whose understanding has improved greatly over the past decade. They have distinctly different physical properties compared to, for example, hot carriers in conventional metals. This is predominantly the result of graphene's linear energy-momentum dispersion, its phonon properties, its all-interface character, and the tunability of its carrier density down to very small values, and from electron- to hole-doping. Since a few years, we have witnessed an increasing interest in technological applications enabled by hot carriers in graphene. Of particular interest are optical and optoelectronic applications, where hot carriers are used to detect (photodetection), convert (nonlinear photonics), or emit (luminescence) light. Graphene-enabled systems in these application areas could find widespread use and have a disruptive impact, for example in the field of data communication, high-frequency electronics, and industrial quality control. The aim of this review is to provide an overview of the most relevant physics and working principles that are relevant for applications exploiting hot carriers in graphene.

Systematic THz study of the substrate effect in limiting the mobility of graphene

We explore the substrate-dependent charge carrier dynamics of large area graphene films using contact-free non-invasive terahertz spectroscopy. The graphene samples are deposited on seven distinct substrates relevant to semiconductor technologies and flexible/photodetection devices. Using a Drude model for Dirac fermions in graphene and a fitting method based on statistical signal analysis, we extract transport properties such as the charge carrier density and carrier mobility. We find that graphene films supported by substrates with minimal charged impurities exhibit an enhanced carrier mobility, while substrates with a high surface roughness generally lead to a lower transport performance. The smallest amount of doping is observed for graphene placed on the polymer Zeonor, which also has the highest carrier mobility. This work provides valuable guidance in choosing an optimal substrate for graphene to enable applications where high mobility is required.

Highly Conductive and Permeable Nanocomposite Ultrafiltration Membranes Using Laser-Reduced Graphene Oxide

Electrically conductive membranes are a promising avenue to reduce water treatment costs due to their ability to minimize the detrimental impact of fouling, to degrade contaminants, and to provide other additional benefits during filtration. Here, we demonstrate the facile and low-cost fabrication of electrically conductive membranes using laser-reduced graphene oxide (GO). In this method, GO is filtered onto a poly(ether sulfone) membrane support before being pyrolyzed via laser into a conductive film. Laser-reduced GO composite membranes are shown to be equally as permeable to water as the underlying membrane support and possess sheet resistances as low as 209 Ω/□. Application of the laser-reduced GO membranes is demonstrated through greater than 97% removal of a surrogate water contaminant, 25 μM methyl orange dye, with an 8 V applied potential. Furthermore, we show that laser-reduced GO membranes can be further tuned with the addition of p-phenylenediamine binding molecules to decrease the sheet resistance to 54 Ω/□.

Ultrathin 2 nm gold as impedance-matched absorber for infrared light

Thermal detectors are a cornerstone of infrared and terahertz technology due to their broad spectral range. These detectors call for efficient absorbers with a broad spectral response and minimal thermal mass. A common approach is based on impedance-matching the sheet resistance of a thin metallic film to half the free-space impedance. Thereby, one can achieve a wavelength-independent absorptivity of up to 50%. However, existing absorber films typically require a thickness of the order of tens of nanometers, which can significantly deteriorate the response of a thermal transducer. Here, we present the application of ultrathin gold (2 nm) on top of a surfactant layer of oxidized copper as an effective infrared absorber. An almost wavelength-independent and long-time stable absorptivity of 47(3)%, ranging from 2 μm to 20 μm, can be obtained. The presented absorber allows for a significant improvement of infrared/terahertz technologies in general and thermal detectors in particular.

Widely tunable mid-infrared light emission in thin-film black phosphorus

Thin-film black phosphorus (BP) is an attractive material for mid-infrared optoelectronic applications because of its layered nature and a moderate bandgap of around 300 meV. Previous photoconduction demonstrations show that a vertical electric field can effectively reduce the bandgap of thin-film BP, expanding the device operational wavelength range in mid-infrared. Here, we report the widely tunable mid-infrared light emission from a hexagonal boron nitride (hBN)/BP/hBN heterostructure device. With a moderate displacement field up to 0.48 V/nm, the photoluminescence (PL) peak from a ~20-layer BP flake is continuously tuned from 3.7 to 7.7 μm, spanning 4 μm in mid-infrared. The PL emission remains perfectly linear-polarized along the armchair direction regardless of the bias field. Moreover, together with theoretical analysis, we show that the radiative decay probably dominates over other nonradiative decay channels in the PL experiments. Our results reveal the great potential of thin-film BP in future widely tunable, mid-infrared light-emitting and lasing applications.

Surface-Specific Spectroscopy of Water at a Potentiostatically Controlled Supported Graphene Monolayer

Knowledge of the structure of interfacial water molecules at electrified solid materials is the first step toward a better understanding of important processes at such surfaces, in, e.g., electrochemistry, atmospheric chemistry, and membrane biophysics. As graphene is an interesting material with multiple potential applications such as in transistors or sensors, we specifically investigate the graphene-water interface. We use sum-frequency generation spectroscopy to investigate the pH- and potential-dependence of the interfacial water structure in contact with a chemical vapor deposited (CVD) grown graphene surface. Our results show that the SFG signal from the interfacial water molecules at the graphene layer is dominated by the underlying substrate and that there are water molecules between the graphene and the (hydrophilic) supporting substrate.

Adsorption-assisted transport of water vapour in super-hydrophobic membranes filled with multilayer graphene platelets

The effects of confinement of multilayer graphene platelets in hydrophobic microporous polymeric membranes are here examined. Intermolecular interactions between water vapour molecules and nanocomposite membranes are envisaged to originate assisted transport of water vapour in membrane distillation processes when a suitable filler-polymer ratio is reached. Mass transport coefficients are estimated under different working conditions, suggesting a strong dependence of the transport on molecular interactions. Remarkably, no thermal polarization is observed, although the filler exhibits ultrahigh thermal conductivity. In contrast, enhanced resistance to wetting as well as outstanding mechanical and chemical stability meets the basic requirements of water purification via membrane distillation. As a result, a significant improvement of the productivity-efficiency trade-off is achieved with respect to the pristine polymeric membrane when low amounts of platelets are confined in spherulitic-like PVDF networks.

Semimetallic Graphene for Infrared Sensing

Both photothermal and photovoltaic infrared (IR) detectors employ sensing materials that have an optical band gap. Different from these conventional materials, graphene has a conical band structure that imposes zero band gap. In this study, using the semimetallic multilayer graphene, IR detection at room temperature is realized. The relatively high Seebeck coefficient, ranging from 40 to 60 μV/K, compared to that of the metal, and the large optical absorption in the mid-IR region, in the wavelength range of 7-17 μm, enable graphene to detect IR without an absorber, which is essential for most IR detectors because the band gap of the sensing materials is much larger than the energy of IR and the incident IR can be absorbed directly by the sensing material. Thus, the incident IR can be absorbed directly by the sensing material in our device. The developed detector with a SiN membrane shows high responsivity and detectivity, which are 140 V/W and 5 × 10⁸ cm·Hz^1/2/W at 5 Hz, respectively. In addition, the IR sensor shows a response time of 600 μs. In the room-temperature operation of the IR sensor array without cooling, our sensors detect IR emitted from a human body and track the movement. The availability of large-area graphene in current technology opens new applications for metallic two-dimensional materials and a possibility for scale-up.

Wide Angle Dynamically Tunable Enhanced Infrared Absorption on Large-Area Nanopatterned Graphene

Enhancing light-matter interaction by exciting Dirac plasmons on nanopatterned monolayer graphene is an efficient route to achieve high infrared absorption. Here, we designed and fabricated hexagonal planar arrays of nanoholes and nanodisks with and without optical cavity to excite Dirac plasmons on patterned graphene and investigate the role of plasmon lifetime, extinction cross-section, incident light polarization, angle of incident light, and pattern dimensions on the light-absorption spectra. By incorporating a high-k Al₂O₃ layer as the gate dielectric for dynamic electrostatic tuning of the Fermi level, we demonstrate peak absorptions of 60% and 90% for the nanohole and nanodisk patterns, respectively, in the atmospheric transparent 8-12 μm infrared imaging band with high spectral tunability. Finally, we theoretically and experimentally demonstrate angular dependence of both s- and p-polarized light absorption in monolayer graphene. Our results showcase the practical usability of low carrier mobility CVD-grown graphene for wide angle infrared absorption, which is suitable for next-generation optoelectronic devices such as photodetectors, optical switches, modulators, etc.

Efficient electrical detection of mid-infrared graphene plasmons at room temperature

Optical excitation and subsequent decay of graphene plasmons can produce a significant increase in charge-carrier temperature. An efficient method to convert this temperature elevation into electrical signals can enable important mid-infrared applications. However, the modest thermoelectric coefficient and weak temperature dependence of carrier transport in graphene hinder this goal. Here, we demonstrate mid-infrared graphene detectors consisting of arrays of plasmonic resonators interconnected by quasi-one-dimensional nanoribbons. Localized barriers associated with disorder in the nanoribbons produce a dramatic temperature dependence of carrier transport, thus enabling the electrical detection of plasmon decay in the nearby graphene resonators. Our device has a subwavelength footprint of 5 × 5 μm² and operates at 12.2 μm with an external responsivity of 16 mA W^-1 and a low noise-equivalent power of 1.3 nW Hz^-1/2 at room temperature. It is fabricated using large-scale graphene and possesses a simple two-terminal geometry, representing an essential step towards the realization of an on-chip graphene mid-infrared detector array.

Observing of the super-Planckian near-field thermal radiation between graphene sheets

Thermal radiation can be substantially enhanced in the near-field scenario due to the tunneling of evanescent waves. Monolayer graphene could play a vital role in this process owing to its strong infrared plasmonic response, however, which still lacks an experimental verification due to the technical challenges. Here, we manage to make a direct measurement about plasmon-mediated thermal radiation between two macroscopic graphene sheets using a custom-made setup. Super-Planckian radiation with efficiency 4.5 times larger than the blackbody limit is observed at a 430-nm vacuum gap on insulating silicon hosting substrates. The positive role of graphene plasmons is further confirmed on conductive silicon substrates which have strong infrared loss and thermal emittance. Based on these, a thermophotovoltaic cell made of the graphene–silicon heterostructure is lastly discussed. The current work validates the classic thermodynamical theory in treating graphene and also paves a way to pursue the application of near-field thermal management.

Though monolayer graphene has the potential to be used in near-field thermal management applications, no experimental verification has been provided to date. Here, the authors directly measure plasmon-enhanced near-field heat transfer between graphene sheets on intrinsic silicon substrates.

Electrical Homogeneity Mapping of Epitaxial Graphene on Silicon Carbide

Epitaxial graphene is a promising route to wafer-scale production of electronic graphene devices. Chemical vapor deposition of graphene on silicon carbide offers epitaxial growth with layer control but is subject to significant spatial and wafer-to-wafer variability. We use terahertz time-domain spectroscopy and micro four-point probes to analyze the spatial variations of quasi-freestanding bilayer graphene grown on 4 in. silicon carbide (SiC) wafers and find significant variations in electrical properties across large regions, which are even reproduced across graphene on different SiC wafers cut from the same ingot. The dc sheet conductivity of epitaxial graphene was found to vary more than 1 order of magnitude across a 4 in. SiC wafer. To determine the origin of the variations, we compare different optical and scanning probe microscopies with the electrical measurements from nano- to millimeter scale and identify three distinct qualities of graphene, which can be attributed to the microstructure of the SiC surface.

An exciton-polariton bolometer for terahertz radiation detection

We experimentally investigate the feasibility of a bolometric device based on exciton-polaritons. Initial measurements presented in this work show that heating - via thermal expansion and bandgap renormalization - modifies the exciton-polariton propagation wavevector making exciton-polaritons propagation remarkably sensitive to thermal variations. By theoretical simulations we predict that using a single layer graphene absorbing layer, a THz bolometric sensor can be realized by a simple exciton-polariton ring interferometer device. The predicted sensitivity is comparable to presently existing THz bolometric devices with the convenience of being a device that inherently produces an optical signal output.

Quantum Control of Graphene Plasmon Excitation and Propagation at Heaviside Potential Steps

Quantum mechanical effects of single particles can affect the collective plasmon behaviors substantially. In this work, the quantum control of plasmon excitation and propagation in graphene is demonstrated by adopting the variable quantum transmission of carriers at Heaviside potential steps as a tuning knob. First, the plasmon reflection is revealed to be tunable within a broad range by varying the ratio γ between the carrier energy and potential height, which originates from the quantum mechanical effect of carrier propagation at potential steps. Moreover, the plasmon excitation by free-space photos can be regulated from fully suppressed to fully launched in graphene potential wells also through adjusting γ, which defines the degrees of the carrier confinement in the potential wells. These discovered quantum plasmon effects offer a unified quantum-mechanical solution toward ultimate control of both plasmon launching and propagating, which are indispensable processes in building plasmon circuitry.

Broadband impedance match to two-dimensional materials in the terahertz domain

The coupling of an electromagnetic plane wave to a thin conductor depends on the sheet conductance of the material: a poor conductor interacts weakly with the incoming light, allowing the majority of the radiation to pass; a good conductor also does not absorb, reflecting the wave almost entirely. For suspended films, the transition from transmitter to reflector occurs when the sheet resistance is approximately the characteristic impedance of free space (Z₀ = 377 Ω). Near this point, the interaction is maximized, and the conductor absorbs strongly. Here we show that monolayer graphene, a tunable conductor, can be electrically modified to reach this transition, thereby achieving the maximum absorptive coupling across a broad range of frequencies in terahertz (THz) band. This property to be transparent or absorbing of an electromagnetic wave based on tunable electronic properties (rather than geometric structure) is expected to have numerous applications in mm wave and THz components and systems.

Efficient coupling of an electromagnetic wave to a thin conductor relies on the sheet conductance of the given material. Here, the authors demonstrate that engineering the monolayer graphene sheet resistance enables electrical or chemical tuning from the transmission to the absorption regime up to THz frequencies.

Large-Scale Suspended Graphene Used as a Transparent Substrate for Infrared Spectroscopy

Due to weak interactions between micrometer-wavelength infrared (IR) light and nanosized samples, a high signal to noise ratio is a prerequisite in order to precisely characterize nanosized samples using IR spectroscopy. Traditional micrometer-thick window substrates, however, have considerable IR absorption which may introduce unavoidable deformations and interruptions to IR spectra of nanoscale samples. A promising alternative is the use of a suspended graphene substrate which has ultrahigh IR transmittance (>97.5%) as well as unique mechanical properties. Here, an effective method is presented for fabrication of suspended graphene over circular holes up to 150 µm in diameter to be utilized as a transparent substrate for IR spectroscopy. It is demonstrated that the suspended graphene has little impact on the measured IR spectra, an advantage which has led to the discovery of several missing vibrational modes of a 20 nm thick PEO film measured on a traditional CaF₂ substrate. This can provide a better understanding of molecules' fine structures and status of hanging bands. The unique optical properties of suspended graphene are determined to be superior to those of conventional IR window materials, giving this new substrate great potential as part of a new generation of IR transparent substrates, especially for use in examining nanoscale samples.

Low-dimensional gap plasmons for enhanced light-graphene interactions

Graphene plasmonics has become a highlighted research area due to the outstanding properties of deep-subwavelength plasmon excitation, long relaxation time, and electro-optical tunability. Although the giant conductivity of a graphene layer enables the low-dimensional confinement of light, the atomic scale of the layer thickness is severely mismatched with optical mode sizes, which impedes the efficient tuning of graphene plasmon modes from the degraded light-graphene overlap. Inspired by gap plasmon modes in noble metals, here we propose low-dimensional hybrid graphene gap plasmon waves for large light-graphene overlap factor. We show that gap plasmon waves exhibit improved in-plane and out-of-plane field concentrations on graphene compared to those of edge or wire-like graphene plasmons. By adjusting the chemical property of the graphene layer, efficient and linear modulation of hybrid graphene gap plasmon modes is also achieved. Our results provide potential opportunities to low-dimensional graphene plasmonic devices with strong tunability.

Graphene nanoribbon based plasmonic Fresnel zone plate lenses

A graphene-based metamaterial lens is theoretically proposed by combining plasmonic nanoribbons with Fresnel Zone Plate (FZP) architecture to realize wavelength-selective and tunable lensing.

Continuous and ultrathin platinum films on graphene using atomic layer deposition: a combined computational and experimental study

Integrating metals and metal oxides with graphene is key in utilizing its extraordinary material properties that are ideal for nanoelectronic and catalyst applications. Atomic layer deposition (ALD) has become a key technique for depositing ultrathin, conformal metal(oxide) films. ALD of metal(oxide) films on graphene, however, remains a genuine challenge due to the chemical inertness of graphene. In this study we address this issue by combining first-principles density functional theory (DFT) simulations with ALD experiments. The focus is on the Pt ALD on graphene, as this hybrid system is very promising for solar and fuel cells, hydrogen technologies, microreactors, and sensors. Here we elucidate the surface reactions underpinning the nucleation stage of Pt ALD on pristine, defective and functionalized graphenes. The employed reaction mechanism clearly depends on (a) the available surface groups on graphene, and (b) the ligands accompanying the metal centre in the precursor. DFT calculations also indicate that graphene oxide (GO) can afford a stronger adsorption of MeCpPtMe₃, unlike Pt(acac)₂, as compared to bare (non-functionalized) graphene, suggesting that GO monolayers are effective Pt ALD seed layers. Confirming the latter, we evince that wafer-scale, continuous Pt films can indeed be grown on GO monolayers using a thermal ALD process with MeCpPtMe₃ and O₂ gas. Besides, the current in-depth atomistic insights are of practical use for understanding similar ALD processes of other metals and metal oxides on graphene.

Photon-Induced Quantum Oscillations of the Terahertz Conductivity in Graphene

In this work, we present a theory that is able to explain the nonmonotonic decreasing behavior (observed in experimental data1-12) of the graphene terahertz conductivity with the increase of the field frequency. In this connection, the displacement of the structure of topological states inside the energy band gap, which appears in graphene due to the strong photon-electron coupling, and the narrowing of this gap, as result of electron transitions from bound photon-dressed electron states to extended states outside the energy gap driven by the field frequency, lead to a periodic change of singularities near the edge of the band gap, resulting in subtle quantum oscillations of the dynamical terahertz conductivity. This quantum contribution complements the Drude response, which fits the spectral range. On the other hand, the scattering processes by impurities favor interband transitions, suppressing this way intraband terahertz absorptions, which are related to optical transitions from inside to outside the gap.

Monolayer graphene sensing enabled by the strong Fano-resonant metasurface

Recent advances in graphene photonics reveal promising applications in the technologically important terahertz spectrum, where graphene-based active terahertz metamaterial modulators have been experimentally demonstrated. However, the sensitivity of the atomically thin graphene monolayer towards sharp Fano resonant terahertz metasurfaces remains unexplored. Here, we demonstrate thin-film sensing of the graphene monolayer with a high quality factor terahertz Fano resonance in metasurfaces consisting of a two-dimensional array of asymmetric resonators. A drastic change in the transmission amplitude of the Fano resonance was observed due to strong interactions between the monolayer graphene and the tightly confined electric fields in the capacitive gaps of the Fano resonator. The deep-subwavelength sensing of the atomically thin monolayer graphene further highlights the extreme sensitivity of the resonant electric field excited at the dark Fano resonance, allowing the detection of an analyte that is λ/1 000 000 thinner than the free space wavelength.

Independent tuning of double plasmonic waves in a free-standing graphene-spacer-grating-spacer-graphene hybrid slab

The independent excitation and tuning of double plasmonic waves are realized in a free-standing graphene-spacer-grating-spacer-graphene (GSGSG) hybrid slab, which consists of two graphene field effect transistors placed back-to-back to each other. Resulted from the high transparency and the tight confinement of surface plasmonic mode for the graphene, double plasmonic waves can be independently excited by guided-mode resonances (GMRs). Theoretical and numerical investigations are performed in the mid-infrared band. Furthermore, the tuning of individual GMR resonant wavelengths with respect to the system parameters is studied. The results provide opportunities to engineer the proposed hybrid slab for wavelength selective and multiplexing applications.

Experimental Demonstration of Phase Modulation and Motion Sensing Using Graphene-Integrated Metasurfaces

Strong interaction of graphene with light accounts for one of its most remarkable properties: the ability to absorb 2.3% of the incident light's energy within a single atomic layer. Free carrier injection via field-effect gating can dramatically vary the optical properties of graphene, thereby enabling fast graphene-based modulators of the light intensity. However, the very thinness of graphene makes it difficult to modulate the other fundamental property of the light wave: its optical phase. Here we demonstrate that considerable phase control can be achieved by integrating a single-layer graphene (SLG) with a resonant plasmonic metasurface that contains nanoscale gaps. By concentrating the light intensity inside of the nanogaps, the metasurface dramatically increases the coupling of light to the SLG and enables control of the phase of the reflected mid-infrared light by as much as 55° via field-effect gating. We experimentally demonstrate graphene-based phase modulators that maintain the amplitude of the reflected light essentially constant over most of the phase tuning range. Rapid nonmechanical phase modulation enables a new experimental technique, graphene-based laser interferometry, which we use to demonstrate motion detection with nanoscale precision. We also demonstrate that by the judicious choice of a strongly anisotropic metasurface the graphene-controlled phase shift of light can be rendered polarization-dependent. Using the experimentally measured phases for the two orthogonal polarizations, we demonstrate that the polarization state of the reflected light can be by modulated by carrier injection into the SLG. These results pave the way for novel high-speed graphene-based optical devices and sensors such as polarimeters, ellipsometers, and frequency modulators.

Transverse-electric plasmonic modes of cylindrical graphene-based waveguide at near-infrared and visible frequencies

Transverse-electric (TE) surface plasmons (SPs) are very unusual for plasmonics phenomenon. Graphene proposes a unique possibility to observe these plasmons. Due to transverse motion of carriers, TE SPs speed is usually close to bulk light one. In this work we discuss conditions of TE SPs propagation in cylindrical graphene-based waveguides. We found that the negativity of graphene conductivity's imaginary part is not a sufficient condition. The structure supports TE SPs when the core radius of waveguide is larger than the critical value Rcr. Critical radius depends on the light frequency and the difference of permittivities inside and outside the waveguide. Minimum value of Rcr is comparable with the wavelength of volume wave and corresponds to interband carriers transition in graphene. We predict that use of multilayer graphene will lead to decrease of critical radius. TE SPs speed may differ more significantly from bulk light one in case of epsilon-near-zero core and shell of the waveguide. Results may open the door for practical applications of TE SPs in optics, including telecommunications.

Kinetic inductance driven nanoscale 2D and 3D THz transmission lines

We examine the unusual dispersion and attenuation of transverse electromagnetic waves in the few-THz regime on nanoscale graphene and copper transmission lines. Conventionally, such propagation has been considered to be highly dispersive, due to the RC time constant-driven voltage diffusion below 1 THz and plasmonic effects at higher optical frequencies. Our numerical modeling across the microwave, THz, and optical frequency ranges reveals that the conductor kinetic inductance creates an ultra-broadband linear-dispersion and constant-attenuation region in the THz regime. This so-called LC region is an ideal characteristic that is known to be absent in macro-scale transmission lines. The kinetic-LC frequency range is dictated by the structural dimensionality and the free-carrier scattering rate of the conductor material. Moreover, up to 40x wavelength reduction is observed in graphene transmission lines.

Terahertz and mid-infrared reflectance of epitaxial graphene

Graphene has emerged as a promising material for infrared (IR) photodetectors and plasmonics. In this context, wafer scale epitaxial graphene on SiC is of great interest in a variety of applications in optics and nanoelectronics. Here we present IR reflectance spectroscopy of graphene grown epitaxially on the C-face of 6H-SiC over a broad optical range, from terahertz (THz) to mid-infrared (MIR). Contrary to the transmittance, reflectance measurements are not hampered by the transmission window of the substrate, and in particular by the SiC Reststrahlen band in the MIR. This allows us to present IR reflectance data exhibiting a continuous evolution from the regime of intraband to interband charge carrier transitions. A consistent and simultaneous analysis of the contributions from both transitions to the optical response yields precise information on the carrier dynamics and the number of layers. The properties of the graphene layers derived from IR reflection spectroscopy are corroborated by other techniques (micro-Raman and X-ray photoelectron spectroscopies, transport measurements). Moreover, we also present MIR microscopy mapping, showing that spatially-resolved information can be gathered, giving indications on the sample homogeneity. Our work paves the way for a still scarcely explored field of epitaxial graphene-based THz and MIR optical devices.

Direct Optical Probing of Transverse Electric Mode in Graphene

Unique electrodynamic response of graphene implies a manifestation of an unusual propagating and localised transverse-electric (TE) mode near the spectral onset of interband transitions. However, excitation and further detection of the TE mode supported by graphene is considered to be a challenge for it is extremely sensitive to excitation environment and phase matching condition adherence. Here for the first time, we experimentally prove an existence of the TE mode by its direct optical probing, demonstrating significant coupling to an incident wave in electrically doped multilayer graphene sheet at room temperature. We believe that proposed technique of careful phase matching and obtained access to graphene's TE excitation would stimulate further studies of this unique phenomenon, and enable its potential employing in various fields of photonics as well as for characterization of graphene.

Gate-Dependent Electronic Raman Scattering in Graphene

We report the direct observation of polarization resolved electronic Raman scattering in a gated monolayer graphene device. The evolution of the electronic Raman scattering spectra with gate voltage and its polarization dependence are in full agreement with theoretical expectations for nonresonant Raman processes involving interband electron-hole excitations across the Dirac cone. We further show that the spectral dependence of the electronic Raman scattering signal can be simply described by the dynamical polarizability of graphene in the long wavelength limit. The possibility to directly observe Dirac fermion excitations in graphene opens the way to promising Raman investigations of electronic properties of graphene and other 2D crystals.

Electromagnetic Enhancement of Graphene Raman Spectroscopy by Ordered and Size-Tunable Au Nanostructures

The size-controllable and ordered Au nanostructures were achieved by applying the self-assembled monolayer of polystyrene microspheres. Few-layer graphene was transferred directly on top of Au nanostructures, and the coupling between graphene and the localized surface plasmons (LSPs) of Au was investigated. We found that the LSP resonance spectra of ordered Au exhibited a redshift of ~20 nm and broadening simultaneously by the presence of graphene. Meanwhile, the surface-enhanced Raman spectroscopy (SERS) of graphene was distinctly observed; both the graphene G and 2D peaks increased induced by local electric fields of plasmonic Au nanostructures, and the enhancement factor of graphene increased with the particle size, which can be ascribed to the plasmonic coupling between the ordered Au LSPs and graphene.

Photonic materials, structures and devices for Reststrahlen optics

We present a review of existing and potential next-generation far-infrared (20-60 μm) optical materials and devices. The far-infrared is currently one of the few remaining frontiers on the optical spectrum, a space underdeveloped and lacking in many of the optical and optoelectronic materials and devices taken for granted in other, more technologically mature wavelength ranges. The challenges associated with developing optical materials, structures, and devices at these wavelengths are in part a result of the strong phonon absorption in the Reststrahlen bands of III-V semiconductors that collectively span the far-infrared. More than just an underexplored spectral band, the far-IR may also be of potential importance for a range of sensing applications in astrochemistry, biology, and industrial and geological processes. Additionally, with a suitable far-IR optical infrastructure, it is conceivable that even more applications could emerge. In this review, we will present recent progress on far-infrared materials and phenomena such as phononic surface modes, engineered composite materials, and optoelectronic devices that have the potential to serve as the next generation of components in a far-infrared optical tool-kit.

Dielectric screening of excitons in monolayer graphene

Excitonic transitions in graphene monolayers embedded in different dielectric environments have been investigated using combined absorption and transmission spectroscopy techniques. To vary the dielectric environment, graphene monolayer has been exfoliated in liquid medium. It has been shown that exciton binding energy decreases with increase in the dielectric constant of exfoliating solvents due to the screening of electron-electron and electron-hole interactions in graphene. The typical line shape of the excitonic peak in the absorption spectra is explained by the Fano resonance between the excitonic state and band continuum. Further it has been shown that, there exists a scaling relationship between the dielectric constant of the liquid and the exciton binding energy.

Symmetry Engineering of Graphene Plasmonic Crystals

The dispersion relation of plasmons in graphene with a periodic lattice of apertures takes a band structure. Light incident on this plasmonic crystal excites only particular plasmonic modes in select bands. The selection rule is not only frequency/wavevector matching but also symmetry matching, where the symmetry of plasmonic modes originates from the point group symmetry of the lattice. We demonstrate versatile manipulation of light-plasmon coupling behaviors by engineering the symmetry of the graphene plasmonic crystal.

Active graphene-silicon hybrid diode for terahertz waves

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

Sub-terahertz frequency-domain spectroscopy reveals single-grain mobility and scatter influence of large-area graphene

The response of individual domains in wafer-sized chemical vapor deposition graphene is measured by contactless sub-terahertz interferometry, observing the intrinsic optical conductance and reaching very high mobility values. It is shown that charged scatterers limit the mobility, validating previous theoretical predictions, and sub-terahertz quality assessment is demonstrated, as necessary for large-scale applications in touchscreens, as well as wearable and optoelectronic devices.

Plasmon-plasmon hybridization and bandwidth enhancement in nanostructured graphene

Graphene plasmonic structures with long-range layering periodicity are presented. Resonance energy scaling with the number of graphene layers involved in plasmonic excitation allows these structures to support multiple plasmonic modes that couple and hybridize due to their physical proximity. Hybridized states exhibit bandwidth enhancements of 100-200% compared to unhybridized modes, and resonance energies deviate from what is usually observed in coupled plasmonic systems. Origins of this behavior are discussed, and experimental observations are computationally modeled. This work is a precursor and template for the study of plasmonic hybridization in other two-dimensional material systems with layering periodicity.

Phonon-mediated mid-infrared photoresponse of graphene

The photoresponse of graphene at mid-infrared frequencies is of high technological interest and is governed by fundamentally different underlying physics than the photoresponse at visible frequencies, as the energy of the photons and substrate phonons involved have comparable energies. Here, we perform a spectrally resolved study of the graphene photoresponse for mid-infrared light by measuring spatially resolved photocurrent over a broad frequency range (1000-1600 cm(-1)). We unveil the different mechanisms that give rise to photocurrent generation in graphene on a polar substrate. In particular, we find an enhancement of the photoresponse when the light excites bulk or surface phonons of the SiO2 substrate. This work paves the way for the development of graphene-based mid-infrared thermal sensing technology.

Terahertz science and technology of carbon nanomaterials

The diverse applications of terahertz (THz) radiation and its importance to fundamental science makes finding ways to generate, manipulate and detect THz radiation one of the key areas of modern applied physics. One approach is to utilize carbon nanomaterials, in particular, single-wall carbon nanotubes and graphene. Their novel optical and electronic properties offer much promise to the field of THz science and technology. This article describes the past, current, and future of THz science and technology of carbon nanotubes and graphene. We will review fundamental studies such as THz dynamic conductivity, THz nonlinearities and ultrafast carrier dynamics as well as THz applications such as THz sources, detectors, modulators, antennas and polarizers.

Tunable phonon-induced transparency in bilayer graphene nanoribbons

In the phenomenon of plasmon-induced transparency, which is a classical analogue of electromagnetically induced transparency (EIT) in atomic gases, the coherent interference between two plasmon modes results in an optical transparency window in a broad absorption spectrum. With the requirement of contrasting lifetimes, typically one of the plasmon modes involved is a dark mode that has limited coupling to the electromagnetic radiation and possesses relatively longer lifetime. Plasmon-induced transparency not only leads to light transmission at otherwise opaque frequency regions but also results in the slowing of light group velocity and enhanced optical nonlinearity. In this article, we report an analogous behavior, denoted as phonon-induced transparency (PIT), in AB-stacked bilayer graphene nanoribbons. Here, light absorption due to the plasmon excitation is suppressed in a narrow window due to the coupling with the infrared active Γ-point optical phonon, whose function here is similar to that of the dark plasmon mode in the plasmon-induced transparency. We further show that PIT in bilayer graphene is actively tunable by electrostatic gating and estimate a maximum slow light factor of around 500 at the phonon frequency of 1580 cm(-1), based on the measured spectra. Our demonstration opens an avenue for the exploration of few-photon nonlinear optics and slow light in this novel two-dimensional material.