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Han B, Li Y, Wu W, Cai X, Qiu S, He X, Wang S. Infrared Light-Emitting Diodes Based on Chirality-Sorted Carbon Nanotube Films. ACS APPLIED MATERIALS & INTERFACES 2024; 16:4975-4983. [PMID: 38233025 DOI: 10.1021/acsami.3c11990] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/19/2024]
Abstract
An important goal in carbon nanotube optoelectronics is to achieve a high-performance near-infrared light source. But there are still many challenges such as the purity of single-walled carbon nanotube (SWCNT) chirality, nonradiative defects, thin-film quality, and device structure design. Here, we realize infrared light-emitting diodes (LEDs) based on chirality-sorted (10, 5) SWCNT network films, which operate at a low bias voltage and emit at a telecom O band of 1290 nm. Asymmetric palladium (Pd) and hafnium (Hf) contacts are used as electrodes for hole and electron injection, respectively. However, the large Schottky barrier at the interface of the SWCNTs and the Hf electrode, primarily resulting from the polymer wrapped on the nanotube surface during the sorting process, leads to inefficient electron injection and thus a low electroluminescence efficiency. We find that the efficiency of electron injection can be improved by the local doping of the nanotubes with dielectric layers of YOX-HfO2, which reduces the Schottky barrier at the SWCNT/Hf interface. Accordingly, the (10, 5) SWCNT film-based LED achieves an external quantum efficiency of larger than 0.05% without any optical coupling structure. With further improvement, we expect that such an infrared light source will have great application potential in the carbon nanotube monolithic optoelectronic integrated system and on-chip optical interconnection, especially in the field of short-distance optical fiber communications and data center.
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Affiliation(s)
- Bing Han
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Yahui Li
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China
| | - Weifeng Wu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Xiang Cai
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics, Peking University, Beijing 100871, China
| | - Song Qiu
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China
| | - Xiaowei He
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Sheng Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics, Peking University, Beijing 100871, China
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Carbon-Related Materials: Graphene and Carbon Nanotubes in Semiconductor Applications and Design. MICROMACHINES 2022; 13:mi13081257. [PMID: 36014179 PMCID: PMC9412642 DOI: 10.3390/mi13081257] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/01/2022] [Revised: 07/05/2022] [Accepted: 07/29/2022] [Indexed: 12/04/2022]
Abstract
As the scaling technology in the silicon-based semiconductor industry is approaching physical limits, it is necessary to search for proper materials to be utilized as alternatives for nanoscale devices and technologies. On the other hand, carbon-related nanomaterials have attracted so much attention from a vast variety of research and industry groups due to the outstanding electrical, optical, mechanical and thermal characteristics. Such materials have been used in a variety of devices in microelectronics. In particular, graphene and carbon nanotubes are extraordinarily favorable substances in the literature. Hence, investigation of carbon-related nanomaterials and nanostructures in different ranges of applications in science, technology and engineering is mandatory. This paper reviews the basics, advantages, drawbacks and investigates the recent progress and advances of such materials in micro and nanoelectronics, optoelectronics and biotechnology.
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Gaulke M, Janissek A, Peyyety NA, Alamgir I, Riaz A, Dehm S, Li H, Lemmer U, Flavel BS, Kappes MM, Hennrich F, Wei L, Chen Y, Pyatkov F, Krupke R. Low-Temperature Electroluminescence Excitation Mapping of Excitons and Trions in Short-Channel Monochiral Carbon Nanotube Devices. ACS NANO 2020; 14:2709-2717. [PMID: 31920075 DOI: 10.1021/acsnano.9b07207] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Single-walled carbon nanotubes as emerging quantum-light sources may fill a technological gap in silicon photonics due to their potential use as near-infrared, electrically driven, classical or nonclassical emitters. Unlike in photoluminescence, where nanotubes are excited with light, electrical excitation of single tubes is challenging and heavily influenced by device fabrication, architecture, and biasing conditions. Here we present electroluminescence spectroscopy data of ultra-short-channel devices made from (9,8) carbon nanotubes emitting in the telecom band. Emissions are stable under current biasing, and no enhanced suppression is observed down to 10 nm gap size. Low-temperature electroluminescence spectroscopy data also reported exhibit cold emission and line widths down to 2 meV at 4 K. Electroluminescence excitation maps give evidence that carrier recombination is the mechanism for light generation in short channels. Excitonic and trionic emissions can be switched on and off by gate voltage, and corresponding emission efficiency maps were compiled. Insights are gained into the influence of acoustic phonons on the line width, absence of intensity saturation and exciton-exciton annihilation, environmental effects such as dielectric screening and strain on the emission wavelength, and conditions to suppress hysteresis and establish optimum operation conditions.
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Affiliation(s)
- Marco Gaulke
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
| | - Alexander Janissek
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
| | - Naga Anirudh Peyyety
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
| | - Imtiaz Alamgir
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
| | - Adnan Riaz
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
| | - Simone Dehm
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
| | - Han Li
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
| | - Uli Lemmer
- Light Technology Institute, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
- Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
| | - Benjamin S Flavel
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
| | - Manfred M Kappes
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Physical Chemistry, Karlsruhe Institute of Technology, 76128 Karlsruhe, Germany
| | - Frank Hennrich
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
| | - Li Wei
- School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, NSW 2006, Australia
| | - Yuan Chen
- School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, NSW 2006, Australia
| | - Felix Pyatkov
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
| | - Ralph Krupke
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
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Wang B, Yang S, Wang Y, Ahsan R, He X, Kim Y, Htoon H, Kapadia R, John DD, Thibeault B, Doorn SK, Cronin SB. Auger Suppression of Incandescence in Individual Suspended Carbon Nanotube pn-Junctions. ACS APPLIED MATERIALS & INTERFACES 2020; 12:11907-11912. [PMID: 32083460 DOI: 10.1021/acsami.9b17519] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
There are various mechanisms of light emission in carbon nanotubes (CNTs), which give rise to a wide range of spectral characteristics that provide important information. Here we report suppression of incandescence via Auger recombination in suspended carbon nanotube pn-junctions generated from dual-gate CNT field-effect transistor (FET) devices. By applying equal and opposite voltages to the gate electrodes (i.e., Vg1 = -Vg2), we create a pn-junction within the CNT. Under these gating conditions, we observe a sharp peak in the incandescence intensity around zero applied gate voltage, where the intrinsic region has the largest spatial extent. Here, the emission occurs under high electrical power densities of around 0.1 MW/cm2 (or 6 μW) and arises from thermal emission at elevated temperatures above 800 K (i.e., incandescence). It is somewhat surprising that this thermal emission intensity is so sensitive to the gating conditions, and we observe a 1000-fold suppression of light emission between Vg1 = 0 and 15 V, over a range in which the electrical power dissipated in the nanotube is roughly constant. This behavior is understood on the basis of Auger recombination, which suppresses light emission by the excitation of free carriers. Based on the calculated carrier density and band profiles, the length of the intrinsic region drops by a factor of 7-25× over the range from |Vg| = 0 to 15 V. We, therefore, conclude that the light emission intensity is significantly dependent on the free carrier density profile and the size of the intrinsic region in these CNT devices.
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Affiliation(s)
| | | | | | | | - Xiaowei He
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Younghee Kim
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Han Htoon
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | | | - Demis D John
- Nanotech, Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, United States
| | - Brian Thibeault
- Nanotech, Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, United States
| | - Stephen K Doorn
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
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Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes. Nat Commun 2014; 5:5332. [DOI: 10.1038/ncomms6332] [Citation(s) in RCA: 36] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/29/2014] [Accepted: 09/19/2014] [Indexed: 11/09/2022] Open
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Yu D, Wang S, Ye L, Li W, Zhang Z, Chen Y, Zhang J, Peng LM. Electroluminescence from serpentine carbon nanotube based light-emitting diodes on quartz. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2014; 10:1050-1056. [PMID: 24800263 DOI: 10.1002/smll.201302287] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
A light-emitting diode is fabricated and characterized on a semiconducting serpentine CNT which has many parallel segments with identical chirality. Compared with the individual CNT and CNT-film devices, the device with parallel segments shows improvement of an order of magnitude in current, significantly larger electroluminescent intensity, and narrower emission bands. Serpentine nanotubes are an ideal choice for practical applications of CNT-based light sources.
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Bisri SZ, Piliego C, Gao J, Loi MA. Outlook and emerging semiconducting materials for ambipolar transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2014; 26:1176-99. [PMID: 24591008 DOI: 10.1002/adma.201304280] [Citation(s) in RCA: 103] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/26/2013] [Indexed: 05/12/2023]
Abstract
Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection.
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Affiliation(s)
- Satria Zulkarnaen Bisri
- Photophysics and Optoelectronics Group, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747 AG, The Netherlands
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Song J, Lu C, Zhang C, Jin SH, Li Y, Dunham SN, Xie X, Du F, Huang Y, Rogers JA. Modeling of thermocapillary flow to purify single-walled carbon nanotubes. RSC Adv 2014. [DOI: 10.1039/c4ra08895f] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Single walled carbon nanotubes (SWNTs) are of significant interest in the electronic materials research community due to their excellent electrical properties.
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Affiliation(s)
- Jizhou Song
- Department of Engineering Mechanics and Soft Matter Research Center
- Zhejiang University
- Hangzhou 310027, China
| | - Chaofeng Lu
- Department of Civil Engineering and Soft Matter Research Center
- Zhejiang University
- Hangzhou 310058, China
| | - Chenxi Zhang
- Department of Mechanical and Aerospace Engineering
- University of Miami
- Coral Gables, USA
| | - Sung Hun Jin
- Department of Electronics Engineering
- Incheon National University
- Incheon, Republic of Korea
| | - Yuhang Li
- The Solid Mechanics Research Center
- Beihang University (BUAA)
- Beijing 100191, China
| | - Simon N. Dunham
- Department of Materials Science and Engineering
- Frederick Seitz Materials Research Laboratory
- University of Illinois at Urbana-Champaign
- Urbana, USA
| | - Xu Xie
- Department of Materials Science and Engineering
- Frederick Seitz Materials Research Laboratory
- University of Illinois at Urbana-Champaign
- Urbana, USA
| | - Frank Du
- Department of Materials Science and Engineering
- Frederick Seitz Materials Research Laboratory
- University of Illinois at Urbana-Champaign
- Urbana, USA
| | - Yonggang Huang
- Department of Civil and Environmental Engineering
- Department of Mechanical Engineering
- Center for Engineering and Health and Skin Desease Research Center
- Northwestern University
- Evanston, 60208, USA
| | - John A. Rogers
- Department of Materials Science and Engineering
- Frederick Seitz Materials Research Laboratory
- University of Illinois at Urbana-Champaign
- Urbana, USA
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Wahab MA, Jin SH, Islam AE, Kim J, Kim JH, Yeo WH, Lee DJ, Chung HU, Rogers JA, Alam MA. Electrostatic dimension of aligned-array carbon nanotube field-effect transistors. ACS NANO 2013; 7:1299-1308. [PMID: 23320505 DOI: 10.1021/nn304794w] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Accurate electrostatics modeling of nanotubes (NTs)/nanowires (NWs) has significant implications for the ultimate scalability of aligned-array NT/NW field-effect transistors (FETs). The analysis to date has focused on limits of capacitive coupling between the 1D channel and 2D gate that is strictly relevant only in the linear response operation of NT/NW-FETs. Moreover, the techniques of electrostatic doping by independent gates that cover only part of the channel are widely used, but the nature of its electrostatic coupling has not been explored. In this paper, we use a three-dimensional, self-consistent model for NT/NW-FETs to interpret the essence of electrostatic coupling with complex configuration of electrode geometries. The interplay between 3D electric fields and its 1D termination onto the NTs/NWs suggests surprising complexity of electrostatic interaction not captured in simpler models. This coupling can change the performance metrics such as ON and OFF currents by orders of magnitude depending on (1) NT/NW density, (2) bias voltage, and (3) gate overlap length. Remarkably, this parasitic coupling persists regardless of the gate oxide thickness, changes in dielectric constant, and/or the width of the diameter distribution of NTs/NWs. The predictions of the model are systematically validated by a series of experiments.
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Affiliation(s)
- Muhammad A Wahab
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
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