Thinning segregated graphene layers on high carbon solubility substrates of rhodium foils by tuning the quenching process

Advancing Molecular Sieving via Å-Scale Pore Tuning in Bottom-Up Graphene Synthesis

Porous graphene films are attractive as a gas separation membrane given that the selective layer can be just one atom thick, allowing high-flux separation. A favorable aspect of porous graphene is that the pore size, essentially gaps created by lattice defects, can be tuned. While this has been demonstrated for postsynthetic, top-down pore etching in graphene, it does not exist in the more scalable, bottom-up synthesis of porous graphene. Inspired by the mechanism of precipitation-based synthesis of porous graphene over catalytic nickel foil, we herein conceive an extremely simple way to tune the pore size. This is implemented by increasing the cooling rate by over 100-fold from -1 °C min-1 to over -5 °C s-1. Rapid cooling restricts carbon diffusion, resulting in a higher availability of dissolved carbon for precipitation, as evidenced by quantitative carbon-diffusion simulation, measurement of carbon concentration as a function of nickel depth, and imaging of the graphene nanostructure. The resulting enhanced grain (inter)growth reduces the effective pore size which leads to an increase of the H2/CH4 separation factor from 6.2 up to 53.3.

Gas Separation Membranes with Atom-Thick Nanopores: The Potential of Nanoporous Single-Layer Graphene

Gas separation is one of the most important industrial processes and is poised to take a larger role in the transition to renewable energy, e.g., carbon capture and hydrogen purification. Conventional gas separation processes involving cryogenic distillation, solvents, and sorbents are energy intensive, and as a result, the energy footprint of gas separations in the chemical industry is extraordinarily high. This has motivated fundamental research toward the development of novel materials for high-performance membranes to improve the energy efficiency of gas separation. These novel materials are expected to overcome the intrinsic limitations of the conventional membrane material, i.e., polymers, where a longstanding trade-off between the separation selectivity and the permeance has motivated research into nanoporous materials as the selective layer for the membranes. In this context, atom-thick materials such as nanoporous single-layer graphene constitute the ultimate limit for the selective layer. Gas transport from atom-thick nanopores is extremely fast, dependent primarily on the energy barrier that the gas molecule experiences in translocating the nanopore. Consequently, the difference in the energy barriers for two gas molecules determines the gas pair selectivity. In this Account, we summarize the development in the field of nanoporous single-layer graphene membranes for gas separation. We start by discussing the mechanism for gas transport across atom-thick nanopores, which then yields the crucial design elements needed to achieve high-performance membranes: (i) nanopores with an adequate electron-density gap to sieve the desired gas component (e.g., smaller than 0.289, 0.33, 0.346, 0.362, and 0.38 nm for H₂, CO₂, O₂, N₂, and CH₄, respectively), (ii) narrow pore size distribution to limit the nonselective effusive transport from the tail end of the distribution, and (iii) high density of selective pores. We discuss and compare the state-of-the-art bottom-up and top-down routes for the synthesis of nanoporous graphene films. Mechanistic insights and parameters controlling the size, distribution, and density of nanopores are discussed. Fundamental insights are provided into the reaction of ozone with graphene, which has been successfully used by our group to develop membranes with record-high carbon capture performance. Postsynthetic modifications, which allow the tuning of the transport by (i) tailoring the relative contributions of adsorbed-phase and gas-phase transport, (ii) competitive adsorption, and (iii) molecular cutoff adjustment, are discussed. Finally, we discuss practical aspects that are crucial in successfully preparing practical membranes using atom-thick materials as the selective layer, allowing the eventual scale-up of these membranes. Crack- and tear-free preparation of membranes is discussed using the approach of mechanical reinforcement of graphene with nanoporous carbon and polymers, which led to the first reports of millimeter- and centimeter-scale gas-sieving membranes in the year 2018 and 2021, respectively. We conclude with insights and perspectives highlighting the key scientific and technological gaps that must be addressed in the future research.

Controllable growth of two-dimensional materials on noble metal substrates

Chemical vapor deposition (CVD) is a promising approach for the controllable synthesis of two-dimensional (2D) materials. Many studies have demonstrated that the morphology and structure of 2D materials are highly dependent on growth substrates. Hence, the choice of growth substrates is essential to achieve the precise control of CVD growth. Noble metal substrates have attracted enormous interest owing to the high catalytic activity and rich surface morphology for 2D material growth. In this review, we introduce recent progress in noble metals as substrates for the controllable growth of 2D materials. The underlying growth mechanism and substrate designs of noble metals based on their unique features are thoroughly discussed. In the end, we outline the advantages and challenges of using noble metal substrates and prospect the possible approaches to extend the uses of noble metal substrates for 2D material growth and enhance the structural controllability of the grown materials.

Toward Flexible Zinc-Air Batteries with Self-Supported Air Electrodes

The compelling demand for higher energy performance, flexibility, and miniaturization is the main driving force of the energy storage and conversion industry's quest for flexible devices based on new integration and fabrication process. Herein, the recent advances on the development of flexible zinc-air batteries based on self-supported air electrodes are summarized, focusing on the multiscale and systematic design principles for the design of flexible air electrodes. With the electrocatalytic activity regulation and structural engineering strategies, the rational design of self-supported air electrodes is discussed in integrated devices to underpin the good flexibility for wearable requirement. The perspectives on promising developments of flexible zinc-air batteries and the accumulated knowledge from other flexible devices are also addressed for promoting the advances on flexible zinc-air batteries.

Robust atomic-structure of the 6 × 2 reconstruction surface of Ge(110) protected by the electronically transparent graphene monolayer

Wafer-scale growth of the unidirectional graphene monolayer on Ge surfaces has rejuvenated the intense study of the surfaces and interfaces of semiconductors underneath graphene. Recently, it was reported that the Ge atoms in the Ge(110) surface beneath a graphene monolayer underwent a rearrangement and formed an ordered (6 × 2) reconstruction. However, a plausible atomic model related to this (6 × 2) reconstruction is still lacking. Here, by using scanning tunnelling microscopy/spectroscopy (STM/S) and density functional theory (DFT) calculations, we deeply investigated the structural and electronic properties of the Ge(110) (6 × 2) surface encapsulated by a graphene monolayer. The (6 × 2) surface reconstruction was confirmed for the post-annealing-graphene-covered Ge(110) surface via STM, and was found to be quite air-stable, owing to the protection of the graphene monolayer against surface oxidation. Our study disclosed that the topographic features of the topmost graphene monolayer and the Ge(110) surface could be selectively imaged by utilizing suitable scanning biases. According to the STM results and DFT calculations, a rational ball-and-stick model of the (6 × 2) reconstruction was successfully provided, in which an elemental building block comprising two Ge triangles and two isolated Ge atoms adsorbed on the unreconstructed ideal Ge(110) surface. Local density of states of the graphene/Ge surface was explored via scanning tunneling spectroscopy (STS), presenting four well-defined differential conductance (dI/dV) peaks, protruding at energies of 0.2, 0.4, 0.6 and 0.8 eV, respectively. The four peaks predominantly originated from the surface states of the reconstructing adatoms and were well reproduced by our theoretical simulation. This result means that the Ge surface is very robust after being encapsulated by the epitaxial graphene, which could be advantageous for directly fabricating graphene/Ge-hybrid high-speed electronics and optoelectronics based on conventional microelectronics technology.

DFT study of NO adsorption on pristine graphene

A total of three adsorption sites on pristine graphene surface.

Some Like It Flat: Decoupled h-BN Monolayer Substrates for Aligned Graphene Growth

On the path to functional graphene electronics, suitable templates for chemical vapor deposition (CVD) growth of high-mobility graphene are of great interest. Among various substrates, hexagonal boron nitride (h-BN) has established itself as one of the most promising candidates. The nanomesh, a h-BN monolayer grown on the Rh(111) surface where the lattice mismatch of h-BN and rhodium leads to a characteristic corrugation of h-BN, offers an interesting graphene/h-BN interface, different from flat graphene/h-BN systems hitherto studied. In this report, we describe a two-step CVD process for graphene formation on h-BN/Rh(111) at millibar pressures and describe the influence of the surface texture on the CVD process. During a first exposure to the 3-pentanone precursor, carbon atoms are incorporated in the rhodium subsurface, which leads to decoupling of the h-BN layer from the Rh(111) surface. This is reflected in the electronic band structure, where the corrugation-induced splitting of the h-BN bands vanishes. In a second 3-pentanone exposure, a graphene layer is formed on the flat h-BN layer, evidenced by the appearance of the characteristic linear dispersion of its π band. The graphene layer grows incommensurate and highly oriented. The formation of graphene/h-BN on rhodium opens the door to scalable production of well-aligned heterostacks since single-crystalline thin-film Rh substrates are available in large dimensions.

All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2 /Graphene Heterostructures

A facile all-chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS2 in the same growth process, thus allowing the direct construction of MoS2 /Gr vertical heterostructures on Au foils. A weak n-doping effect and an intrinsic bandgap of MoS2 are obtained from MoS2 /Gr/Au via scanning tunneling microscopy and spectroscopy characterization. The exciton binding energy is accurately deduced by combining photoluminescence measurements.

Kinetic study of a swelling-induced network of folds in a cross-linked PS-PDMS film

Constructing a network of folds in a cross-linked PS-PDMS film through combining mesostructural organization of PS-PDMS and solvent-induced mechanical instability.

Quasi-freestanding monolayer heterostructure of graphene and hexagonal boron nitride on Ir(111) with a zigzag boundary

In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a focus of graphene research owing to its tunable bandgap and intriguing properties. We report herein the synthesis of a quasi-freestanding h-BN-G monolayer heterostructure on a weakly coupled Ir(111) substrate, where graphene and h-BN possess distinctly different heights and surface corrugations. An atomically sharp zigzag type boundary has been found to dominate the patching interface between graphene and h-BN, as evidenced by high-resolution Scanning tunneling microscopy investigation as well as density functional theory calculation. Scanning tunneling spectroscopy studies indicate that the graphene and h-BN tend to exhibit their own intrinsic electronic features near the patching boundary. The present work offers a deep insight into the h-BN-graphene boundary structures both geometrically and electronically together with the effect of adlayer-substrate coupling.

High-quality monolayer graphene synthesis on Pd foils via the suppression of multilayer growth at grain boundaries

The segregation of carbon from metals in which carbon is highly soluble, such as Ni (≈1.1 atom% at 1000 °C), is a typical method for graphene growth; this method differs from the surface-catalyzed growth of graphene that occurs on other metals such as Cu (<0.04 atom%). It has not been established whether strictly monolayer graphene could be synthesized through the traditional chemical vapor deposition route on metals where carbon is highly soluble, such as Pd (≈3.5 atom%). In this work, this issue is investigated by suppressing the grain boundary segregation using a pretreatment comprising the annealing of the Pd foils; this method was motivated by the fact that the typical thick growths at the grain boundaries revealed that the grain boundary functions as the main segregation channel in polycrystalline metals. To evaluate the high crystallinity of the as-grown graphene, detailed atomic-scale characterization with scanning tunneling microscopy is performed.

Graphene-based macroscopic assemblies and architectures: an emerging material system

Due to the outstanding physicochemical properties arising from its truly two-dimensional (2D) planar structure with a single-atom thickness, graphene exhibits great potential for use in sensors, catalysts, electrodes, and in biological applications, etc. With further developments in the theoretical understanding and assembly techniques, graphene should enable great changes both in scientific research and practical industrial applications. By the look of development, it is of fundamental and practical significance to translate the novel physical and chemical properties of individual graphene nanosheets into the macroscale by the assembly of graphene building blocks into macroscopic architectures with structural specialities and functional novelties. The combined features of a 2D planar structure and abundant functional groups of graphene oxide (GO) should provide great possibilities for the assembly of GO nanosheets into macroscopic architectures with different macroscaled shapes through various assembly techniques under different bonding interactions. Moreover, macroscopic graphene frameworks can be used as ideal scaffolds for the incorporation of functional materials to offset the shortage of pure graphene in the specific desired functionality. The advantages of light weight, supra-flexibility, large surface area, tough mechanical strength, and high electrical conductivity guarantee graphene-based architectures wide application fields. This critical review mainly addresses recent advances in the design and fabrication of graphene-based macroscopic assemblies and architectures and their potential applications. Herein, we first provide overviews of the functional macroscopic graphene materials from three aspects, i.e., 1D graphene fibers/ribbons, 2D graphene films/papers, 3D network-structured graphene monoliths, and their composite counterparts with either polymers or nano-objects. Then, we present the promising potential applications of graphene-based macroscopic assemblies in the fields of electronic and optoelectronic devices, sensors, electrochemical energy devices, and in water treatment. Last, the personal conclusions and perspectives for this intriguing field are given.

High-mobility graphene on liquid p-block elements by ultra-low-loss CVD growth

The high-quality and low-cost of the graphene preparation method decide whether graphene is put into the applications finally. Enormous efforts have been devoted to understand and optimize the CVD process of graphene over various d-block transition metals (e.g. Cu, Ni and Pt). Here we report the growth of uniform high-quality single-layer, single-crystalline graphene flakes and their continuous films over p-block elements (e.g. Ga) liquid films using ambient-pressure chemical vapor deposition. The graphene shows high crystalline quality with electron mobility reaching levels as high as 7400 cm² V⁻¹s⁻¹ under ambient conditions. Our employed growth strategy is ultra-low-loss. Only trace amounts of Ga are consumed in the production and transfer of the graphene and expensive film deposition or vacuum systems are not needed. We believe that our research will open up new territory in the field of graphene growth and thus promote its practical application.

Direct growth of graphene film on germanium substrate

Graphene has been predicted to play a role in post-silicon electronics due to the extraordinary carrier mobility. Chemical vapor deposition of graphene on transition metals has been considered as a major step towards commercial realization of graphene. However, fabrication based on transition metals involves an inevitable transfer step which can be as complicated as the deposition of graphene itself. By ambient-pressure chemical vapor deposition, we demonstrate large-scale and uniform depositon of high-quality graphene directly on a Ge substrate which is wafer scale and has been considered to replace conventional Si for the next generation of high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs). The immiscible Ge-C system under equilibrium conditions dictates graphene depositon on Ge via a self-limiting and surface-mediated process rather than a precipitation process as observed from other metals with high carbon solubility. Our technique is compatible with modern microelectronics technology thus allowing integration with high-volume production of complementary metal-oxide-semiconductors (CMOS).

Single and polycrystalline graphene on Rh(111) following different growth mechanisms

Graphene grown on the same substrate but under different growth conditions may evolve diverse characteristics and disparate growth mechanisms. To explore this issue, graphene is prepared on Rh(111) by both ultrahigh vacuum and ambient-pressure chemical vapor deposition methods and the different growth behaviors, the atomic-scale structures, and the stacking geometry are analysed, mainly by virtue of scanning tunneling microscope. Interestingly, with ultrahigh vacuum chemical vapor deposition growth at 600 °C, a template growth of graphene by the Rh(111) lattice is obtained, reflected with the formation of a uniform graphene moiré. In comparison, with the ambient-pressure chemical vapor deposition at 1000 °C by different quenching processes, monolayer and randomly stacked few-layer polycrystalline graphene is achieved, probably directed by combined surface catalysis and segregation mechanisms. In this case, strong and weak interactions between graphene and Rh substrates are suggested, with the samples prepared under vacuum and ambient-pressure conditions, respectively. This work is expected to contribute greatly to the exploration of interactions between graphene and a substrate, as well as the segregation mechanism of graphene growth on polycrystalline transitional metal substrates.