Piezotronic effect on the sensitivity and signal level of Schottky contacted proactive micro/nanowire nanosensors

Adjustment methods of Schottky barrier height in one- and two-dimensional semiconductor devices

The Schottky contact which is a crucial interface between semiconductors and metals is becoming increasingly significant in nano-semiconductor devices. A Schottky barrier, also known as the energy barrier, controls the depletion width and carrier transport across the metal-semiconductor interface. Controlling or adjusting Schottky barrier height (SBH) has always been a vital issue in the successful operation of any semiconductor device. This review provides a comprehensive overview of the static and dynamic adjustment methods of SBH, with a particular focus on the recent advancements in nano-semiconductor devices. These methods encompass the work function of the metals, interface gap states, surface modification, image-lowering effect, external electric field, light illumination, and piezotronic effect. We also discuss strategies to overcome the Fermi-level pinning effect caused by interface gap states, including van der Waals contact and 1D edge metal contact. Finally, this review concludes with future perspectives in this field.

Simultaneous recognition of dopamine and uric acid in real samples through highly sensitive new electrode fabricated using ZnO/carbon quantum dots: bio-imaging and theoretical studies

Dopamine (DA) and uric acid (UA), which are vital components in human metabolism, cause several health problems if they are present in altered concentrations; thus, the determination of DA and UA is essential in real samples using selective sensors. In the present study, graphite carbon paste electrodes (CPE) were fabricated using ZnO/carbon quantum dots (ZnO/CQDs) and employed as electrochemical sensors for the detection of DA and UA. These electrodes were fully characterized via different analytical techniques (XRD, SEM, TEM, XPS, and EDS). The electrochemical responses from the modified electrodes were evaluated using cyclic voltammetry, square wave voltammetry, and electrochemical impedance spectroscopy. The results showed that the present electrode has exhibited high sensitivity towards DA, recognizing even at low concentrations (0.12 μM), and no inference was observed in the presence of UA. The ZnO/CQD electrode was applied for the simultaneous detection of co-existing DA and UA in real human urine samples and the peak potential separation between DA and UA was found to be greatly associated with the synergistic effect originated from ZnO and CQDs. The limit of detection (LOD) of the electrode was analyzed, and compared with other commercially available electrodes. Thus, the ZnO/CQD electrode was used to detect DA and UA in real samples, such as Saccharomyces cerevisiae cells.

Theoretical Analysis of Piezoelectric Semiconductor Thick Plates with Periodic Boundary Conditions

Piezoelectric semiconductors, being materials with both piezoelectric and semiconducting properties, are of particular interest for use in multi-functional devices and naturally result in multi-physics analysis. This study provides analytical solutions for thick piezoelectric semiconductor plates with periodic boundary conditions and includes an investigation of electromechanical coupling effects. Using the linearization of the drift-diffusion equations for both electrons and holes for small carrier concentration perturbations, the governing equations are solved by the extended Stroh formalism, which is a method for solving the eigenvalues and eigenvectors of a problem. The solution, obtained in the form of a series expansion with an unknown coefficient, is solved by matching Fourier series expansions of the boundary conditions. The distributions of electromechanical fields and the concentrations of electrons and holes under four-point bending and three-point bending loads are calculated theoretically. The effects of changing the period length and steady-state carrier concentrations are covered in the discussion, which also reflects the extent of coupling in multi-physics interactions. The results provide a theoretical method for understanding and designing with piezoelectric semiconductor materials.

Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics

The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human-machine interaction, and active flexible electronic devices. The piezo-phototronic effect is a three-field coupling effect of semiconductor, photoexcitation, and piezoelectric properties. The piezoelectric potential generated by the applied strain in the piezoelectric semiconductor controls the generation, transport, separation, and recombination of carriers at the metal-semiconductor contact or p-n junction interface, thereby improving optoelectronic devices performance, such as photodetectors, solar cells, and light-emitting diodes (LED). Since then, the piezotronics and piezo-phototronic effects have attracted vast research interest due to their ability to remarkably enhance the performance of electronic and optoelectronic devices. Meanwhile, ZnO has become an ideal material for studying the piezotronic and piezo-phototronic effects due to its simple preparation process and better biocompatibility. In this review, first, the preparation methods and structural characteristics of ZnO nanowires (NWs) with different doping types were summarized. Then, the theoretical basis of the piezotronic effect and its application in the fields of sensors, biochemistry, energy harvesting, and logic operations (based on piezoelectric transistors) were reviewed. Next, the piezo-phototronic effect in the performance of photodetectors, solar cells, and LEDs was also summarized and analyzed. In addition, modulation of the piezotronic and piezo-phototronic effects was compared and summarized for different materials, structural designs, performance characteristics, and working mechanisms' analysis. This comprehensive review provides fundamental theoretical and applied guidance for future research directions in piezotronics and piezo-phototronics for optoelectronic devices and energy harvesting.

Competitive Impedance Spectroscopy in a Schottky-Contacted ZnO Nanorod Structure for Ultrasensitive and Specific Biosensing in a Physiological Analyte

To enable detection and discovery of biomarkers, development of label-free, ultrasensitive, and specific sensors is the need of the hour. For addressing this requirement, here, a Schottky-contacted ZnO nanorod biosensor has been demonstrated, which explores the interplay between Schottky junction capacitance and solution resistance, resulting in an interesting sensing principle of competitive impedance spectroscopy. When the transition of dominating impedance occurs from solution resistance to junction capacitance, a notch or a peak appears in the impedance response at a particular frequency (referred to as the corner frequency) depending on the charge of the target molecule. The appearance of the peak or notch acts like an electronic label for selectivity since it is visible only for target molecules even at ultralow concentrations in the physiological analyte, where the magnitude of impedance change overlaps with that for nonspecific molecules. This phenomenon has been successfully applied for the positively charged vascular endothelial growth factor (VEGF) and the negatively charged hepatitis B surface antigen (HBsAg), where the shifts in the higher corner frequencies for 1 aM concentration of the target molecules have been observed to be more than 3 times the changes in the impedance magnitude. Further, the area of the ZnO nanorods was segmented into two zones corresponding to the lower and higher concentration regimes, thereby expanding the dynamic range. To summarize, an ultralow detection limit of 1 aM with a dynamic range up to 1 pM was achieved for VEGF and HBsAg, which is 4 orders of magnitude and 20 times lower than their most sensitive label-free reports, respectively.

Fatigue and its effect on the piezopotential properties of gallium nitride nanowires

The gallium nitride (GaN) nanowires (NWs) in piezotronic applications are usually under cyclic loading, which thus may inevitably suffer the mechanical fatigue. In this paper, the fatigue behaviours of defective GaN NWs are investigated by using molecular dynamics (MD) simulations. Our results show no significant changes in the molecular structures of GaN NWs until their final failure during the fatigue process. The final fracture occurring in the GaN NWs under fatigue loading is triggered by the crack that unusually initiates from the NW surface. The GaN NW with a smaller defect concentration or under the fatigue load with a smaller amplitude is found to possess a longer fatigue life. In addition, the ultimate fatigue strain of GaN NWs can be significantly increased by reducing the defect concentration of NWs. The material parameters including elastic constants, piezoelectric coefficients, and dielectric constants of GaN NWs in the fatigue test are evaluated through MD simulations, all of which are found to keep almost unchanged during the fatigue process. These material parameters together with the band gaps of GaN NWs extracted from first-principles calculations are employed in finite element calculations to investigate the piezopotential properties of GaN NWs under fatigue loading. No significant changes are found in the piezopotential properties of GaN NWs during the fatigue process, which indicates the long-term dynamic reliability of GaN NWs in piezotronic applications.

Tunable Schottky barrier height of a Pt-CuO junction via a triboelectric nanogenerator

Tuning Schottky barrier height is crucial to optimize the performance of Schottky junction devices. Here, we demonstrate that the Schottky barrier height can be tuned with the voltage from a triboelectric nanogenerator (TENG). Schottky barrier heights at both ends are increased after the treatment with the voltage generated by the TENG. The electric field generated by the impulse voltage of the TENG drives the diffusion of the ionized oxygen vacancy in a CuO nanowire, which induces the nonuniform distribution of the ionized oxygen vacancy. The positively charged oxygen vacancy accumulates at the contacted interface of Pt and the CuO nanowire, and it impels the conduction and valence bands to bend downwards. The Schottky barrier height is raised. A theoretical model based on the energy band diagram is proposed to explain this phenomenon. This method offers a simple and effective avenue to tune the Schottky barrier height. It opens up the possibility to develop a high-performance Schottky sensor by tuning the Schottky barrier height.

Advances in ultrasensitive piezoresistive sensors: from conventional to flexible and stretchable applications

The piezoresistive effect has been a dominant mechanical sensing principle that has been widely employed in a range of sensing applications. This transducing concept still receives great attention because of the huge demand for developing small, low-cost, and high-performance sensing devices. Many researchers have extensively explored new methods to enhance the piezoresistive effect and to make sensors more and more sensitive. Many interesting phenomena and mechanisms to enhance the sensitivity have been discovered. Numerous review papers on the piezoresistive effect have been published; however, there is no comprehensive review article that thoroughly analyses methods and approaches to enhance the piezoresistive effect. This paper comprehensively reviews and presents all the advanced enhancement methods ranging from the quantum physical effect and new materials to nanoscopic and macroscopic structures, and from conventional rigid to flexible, stretchable and wearable applications. In addition, the paper summarises results recently achieved on applying the above-mentioned innovative sensing enhancement techniques in making extremely sensitive piezoresistive transducers.

Schottky-Contacted Nanowire Sensors

The progress of the Internet-of-Things in the past few years has necessitated the support of high-performance sensors. Schottky-contacted nanowire sensors have attracted considerable attention owing to their high sensitivity and fast response time. Their progress is reviewed here, based on several kinds of important nanowires, for applications such as bio/chemical sensors, gas sensors, photodetectors, and strain sensors. Although Schottky-contacted nanowire sensors deliver excellent performance in these fields, they can be further improved by various methods, including defect engineering, surface modification, the piezotronic effect, and the piezophototronic effect, all of which are discussed here. With regard to practical applications, further efforts are required to address challenges such as the stability, selectivity, ultrafast response, multifunctionality, flexibility, distributed energy supply, and sustainability of Schottky-contacted nanowire sensors. Finally, future perspectives and solutions are discussed.

On the piezotronic behaviours of wurtzite core-shell nanowires

The piezotronic behaviours of wurtzite core-shell nanowires (NWs) are studied in this paper by using a multiscale modelling technique. A difference between piezopotentials obtained from molecular dynamics simulations and finite element calculations indicates that due to the influence of small-scale effects the widely used conventional electromechanical theory is not accurate in describing the piezopotential properties of the present core-shell NWs. Although the residual strains intrinsically existing in core-shell NWs and the structural reconstruction at their surface and interface both account for these small-scale effects, the latter is found to play the dominate role, which makes the material properties of core-shell NWs significantly depend on their geometric size. A novel core-interface-shell-surface model is proposed here to analytically describe the size dependence of the material properties and thus the small-scale effects on the piezopotential of core-shell NWs. Besides possessing a good piezoelectric performance, our density functional theory calculations also show that the core-shell NWs under external loading can retain the semiconducting properties, which confirms the existence of piezotronic effects in them. However, owing to the intrinsic asymmetric Schottky barriers at the source and drain contacts induced by residual piezopotentials in core-shell NWs, the piezotronic effects of core-shell NWs are different to those of their conventional single-component counterparts. The superb piezopotential properties and unique piezotronic behaviours observed in wurtzite core-shell NWs make them good candidates for high performance components in novel piezotronic nanodevices.

Giant piezoresistive effect by optoelectronic coupling in a heterojunction

Enhancing the piezoresistive effect is crucial for improving the sensitivity of mechanical sensors. Herein, we report that the piezoresistive effect in a semiconductor heterojunction can be enormously enhanced via optoelectronic coupling. A lateral photovoltage, which is generated in the top material layer of a heterojunction under non-uniform illumination, can be coupled with an optimally tuned electric current to modulate the magnitude of the piezoresistive effect. We demonstrate a tuneable giant piezoresistive effect in a cubic silicon carbide/silicon heterojunction, resulting in an extraordinarily high gauge factor of approximately 58,000, which is the highest gauge factor reported for semiconductor-based mechanical sensors to date. This gauge factor is approximately 30,000 times greater than that of commercial metal strain gauges and more than 2,000 times greater than that of cubic silicon carbide. The phenomenon discovered can pave the way for the development of ultra-sensitive sensor technology.

Designing reliable and sensitive mechanical sensing technologies based on piezoresistive effect remains a challenge. Here, the authors propose an opto-electro-mechanical coupling strategy to enable giant piezoresistive effect in a highly doped 3C-SiC/Si heterojunction achieving a high GF of 58,000.

Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires

With the fast development of nanoscience and nanotechnology in the last 30 years, semiconductor nanowires have been widely investigated in the areas of both electronics and optoelectronics. Among them, representatives of third generation semiconductors, such as ZnO and GaN, have relatively large spontaneous polarization along their longitudinal direction of the nanowires due to the asymmetric structure in their c-axis direction. Two-way or multiway couplings of piezoelectric, photoexcitation, and semiconductor properties have generated new research areas, such as piezotronics and piezo-phototronics. In this review, an in-depth discussion of the mechanisms and applications of nanowire-based piezotronics and piezo-phototronics is presented. Research on piezotronics and piezo-phototronics has drawn much attention since the effective manipulation of carrier transport, photoelectric properties, etc. through the application of simple mechanical stimuli and, conversely, since the design of new strain sensors based on the strain-induced change in semiconductor properties.

Effect of TC(002) on the Output Current of a ZnO Thin-Film Nanogenerator and a New Piezoelectricity Mechanism at the Atomic Level

Understanding the piezoelectricity mechanism is crucial for developing new materials for better performance. Here, we developed a nanogenerator based on the ZnO thin films having various TC(002) values. The output current well correlated to the magnitude of (002) texture coefficient (TC(002)). Additionally, the TC(002)-dependent photovoltaic and rectification properties are observed. When the film is subjected to persistent compression, the photovoltaic, rectification, and piezoelectric properties fade away. Based on our observation that the ZnO polar structure always shows a spontaneous electron field (SEF), we thus propose a new piezoelectricity mechanism. The [001]-orientated ZnO thin film with the SEF is equivalent to a capacitor, the compression functions as a discharging process, and the removal of the external stress serves as a charging process. The physical mechanism provides an insight into various energy conversion processes that will inspire advanced designs of high-performance nanogenerators, solar cells, and other optoelectronic devices.

The Effect of UV Illumination on the Room Temperature Detection of Vaporized Ammonium Nitrate by a ZnO Coated Nanospring-Based Sensor

The effect of UV illumination on the room temperature electrical detection of ammonium nitrate vapor was examined. The sensor consists of a self-assembled ensemble of silica nanosprings coated with zinc oxide. UV illumination mitigates the baseline drift of the resistance relative to operation under dark conditions. It also lowers the baseline resistance of the sensor by 25% compared to dark conditions. At high ammonium nitrate concentrations (120 ppm), the recovery time after exposure is virtually identical with or without UV illumination. At low ammonium nitrate concentrations (20 ppm), UV illumination assists with refreshing of the sensor by stimulating analyte desorption, thereby enabling the sensor to return to its baseline resistance. Under dark conditions and low ammonium nitrate concentrations, residual analyte builds up with each exposure, which inhibits the sensor from returning to its original baseline resistance and subsequently impedes sensing due to permanent occupation of absorption sites.

Self-Powered Nanoscale Photodetectors

Novel self-powered nanoscale photodetectors that can work without an external power source, which have great application potential in next-generation nanodevices that operate wirelessly and independently, are being widely studied. This review aims to give a comprehensive summary of the state-of-the-art research results on self-powered nanoscale photodetectors. An introduction of recent progress on Schottky junction photodetectors is provided. Two types of Schottky junctions are discussed in detail: metal-semiconductor and semiconductor-graphene junctions. Next, recent developments of p-n junction photodetectors are highlighted, including homojunction and heterojunction photodetectors. Then, piezo-phototronic effect enhanced photodetection performances of Schottky junctions and p-n junctions are discussed. Then, significant results on the photoelectrochemical-cell-based photodetector and integrated self-powered nanosystem are presented, followed by a systematic comparison of different types of photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. The hope is that this review can provide valuable insights into the current status of self-powered photodetectors and spur new structure and device designs to further enhance photodetection performance.

Flexible Light Emission Diode Arrays Made of Transferred Si Microwires-ZnO Nanofilm with Piezo-Phototronic Effect Enhanced Lighting

Due to the fragility and the poor optoelectronic performances of Si, it is challenging and exciting to fabricate the Si-based flexible light-emitting diode (LED) array devices. Here, a flexible LED array device made of Si microwires-ZnO nanofilm, with the advantages of flexibility, stability, lightweight, and energy savings, is fabricated and can be used as a strain sensor to demonstrate the two-dimensional pressure distribution. Based on piezo-phototronic effect, the intensity of the flexible LED array can be increased more than 3 times (under 60 MPa compressive strains). Additionally, the device is stable and energy saving. The flexible device can still work well after 1000 bending cycles or 6 months placed in the atmosphere, and the power supplied to the flexible LED array is only 8% of the power of the surface-contact LED. The promising Si-based flexible device has wide range application and may revolutionize the technologies of flexible screens, touchpad technology, and smart skin.

Piezopotential-Programmed Multilevel Nonvolatile Memory As Triggered by Mechanical Stimuli

We report the development of a piezopotential-programmed nonvolatile memory array using a combination of ion gel-gated field-effect transistors (FETs) and piezoelectric nanogenerators (NGs). Piezopotentials produced from the NGs under external strains were able to replace the gate voltage inputs associated with the programming/erasing operation of the memory, which reduced the power consumption compared with conventional memory devices. Multilevel data storage in the memory device could be achieved by varying the external bending strain applied to the piezoelectric NGs. The resulting devices exhibited good memory performance, including a large programming/erasing current ratio that exceeded 10³, multilevel data storage of 2 bits (over 4 levels), performance stability over 100 cycles, and stable data retention over 3000 s. The piezopotential-programmed multilevel nonvolatile memory device described here is important for applications in data-storable electronic skin and advanced human-robot interface operations.

Progress in piezo-phototronic effect modulated photovoltaics

Wurtzite structured materials, like ZnO, GaN, CdS, and InN, simultaneously possess semiconductor and piezoelectric properties. The inner-crystal piezopotential induced by external strain can effectively tune/control the carrier generation, transport and separation/combination processes at the metal-semiconductor contact or p-n junction, which is called the piezo-phototronic effect. This effect can efficiently enhance the performance of photovoltaic devices based on piezoelectric semiconductor materials by utilizing the piezo-polarization charges at the junction induced by straining, which can modulate the energy band of the piezoelectric material and then accelerate or prevent the separation process of the photon-generated electrons and vacancies. This paper introduces the fundamental physics principles of the piezo-phototronic effect, and reviews recent progress in piezo-phototronic effect enhanced solar cells, including solar cells based on semiconductor nanowire, organic/inorganic materials, quantum dots, and perovskite. The piezo-phototronic effect is suggested as a suitable basis for the development of an innovative method to enhance the performance of solar cells based on piezoelectric semiconductors by applied extrinsic strains, which might be appropriate for fundamental research and potential applications in various areas of optoelectronics.

Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire

One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential of optoelectronic applications. However, most reported work about InAs NW-based photodetectors is limited to the visible waveband. Although some work shows certain response for near-infrared light, the problems of large dark current and small light on/off ratio are unsolved, thus significantly restricting the detectivity. Here in this work, a novel "visible light-assisted dark-current suppressing method" is proposed for the first time to reduce the dark current and enhance the infrared photodetection of single InAs NW photodetectors. This method effectively increases the barrier height of the metal-semiconductor contact, thus significantly making the device a metal-semiconductor-metal (MSM) photodiode. These MSM photodiodes demonstrate broadband detection from less than 1 μm to more than 3 μm and a fast response of tens of microseconds. A high detectivity of ∼10¹² Jones has been achieved for the wavelength of 2000 nm at a low bias voltage of 0.1 V with corresponding responsivity of as much as 40 A/W. Even for the incident wavelength of 3113 nm, a detectivity of ∼10¹⁰ Jones and a responsivity of 0.6 A/W have been obtained. Our work has achieved an extended detection waveband for single InAs NW photodetector from visible and near-infrared to mid-infrared. The excellent performance for infrared detection demonstrated the great potential of narrow bandgap NWs for future infrared optoelectronic applications.

Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

The piezotronic effect is applied to modulate the physical properties of heterojunction electron gas and thus tune the electric transport in AlGaN/AlN/GaN heterostructure microwires. At room temperature, the conductance is increased by 165% under -1.78% compressive strains, and reduced by 48% under 1.78% tensile strains; at 77 K, this modulating effect is further improved by 890% and 940% under compressive and tensile strains, respectively.

Progress in Piezo-Phototronic-Effect-Enhanced Light-Emitting Diodes and Pressure Imaging

Wurtzite materials exhibit both semiconductor and piezoelectric properties under strains due to the non-central symmetric crystal structures. The three-way coupling of semiconductor properties, piezoelectric polarization and optical excitation in ZnO, GaN, CdS and other piezoelectric semiconductors leads to the emerging field of piezo-phototronics. This effect can efficiently manipulate the emission intensity of light-emitting diodes (LEDs) by utilizing the piezo-polarization charges created at the junction upon straining to modulate the energy band diagrams and the optoelectronic processes, such as generation, separation, recombination and/or transport of charge carriers. Starting from fundamental physics principles, recent progress in piezo-phototronic-effect-enhanced LEDs is reviewed; following their development from single-nanowire pressure-sensitive devices to high-resolution array matrices for pressure-distribution mapping applications. The piezo-phototronic effect provides a promising method to enhance the light emission of LEDs based on piezoelectric semiconductors through applying static strains, and may find perspective applications in various optoelectronic devices and integrated systems.

Surface defect engineering: gigantic enhancement in the optical and gas detection ability of metal oxide sensor

By using surface defect engineering, the gigantic enhancement in UV and gas detection abilities of nanosensors can be achieved.

Interface engineering: broadband light and low temperature gas detection abilities using a nano-heterojunction device

Herein, we have designed a nano-heterojunction device using interface defects and band bending effects, which can have broadband light detection (from 365-940 nm) and low operating temperature (50 °C) gas detection abilities. The broadband light detection mechanism occurs because of the defects and band bending between the heterojunction interface. We have demonstrated this mechanism using CoSi2/SnO2, CoSi2/TiO2, Ge/SnO2 and Ge/TiO2 nano-heterojunction devices, and all these devices show broadband light detection ability. Furthermore, the nano-heterojunction of the nano-device has a local Joule-heating effect. For gas detection, the results show that the nano-heterojunction device presents a high detection ability. The reset time and sensitivity of the nano-heterojunction device are an order faster and larger than Schottky-contacted devices (previous works), which is due to the local Joule-heating effect between the interface of the nano-heterojunction. Based on the abovementioned idea, we can design diverse nano-devices for widespread use.

Ultrasensitive Thin-Film-Based Alx Ga1-x N Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential

Alx Ga1-x N thin-film-based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound Alx Ga1-x N is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect.

Recent Progress in Electronic Skin

The skin is the largest organ of the human body and can sense pressure, temperature, and other complex environmental stimuli or conditions. The mimicry of human skin's sensory ability via electronics is a topic of innovative research that could find broad applications in robotics, artificial intelligence, and human-machine interfaces, all of which promote the development of electronic skin (e-skin). To imitate tactile sensing via e-skins, flexible and stretchable pressure sensor arrays are constructed based on different transduction mechanisms and structural designs. These arrays can map pressure with high resolution and rapid response beyond that of human perception. Multi-modal force sensing, temperature, and humidity detection, as well as self-healing abilities are also exploited for multi-functional e-skins. Other recent progress in this field includes the integration with high-density flexible circuits for signal processing, the combination with wireless technology for convenient sensing and energy/data transfer, and the development of self-powered e-skins. Future opportunities lie in the fabrication of highly intelligent e-skins that can sense and respond to variations in the external environment. The rapidly increasing innovations in this area will be important to the scientific community and to the future of human life.

Stretchable and Tunable Microtectonic ZnO-Based Sensors and Photonics

The concept of realizing electronic applications on elastically stretchable "skins" that conform to irregularly shaped surfaces is revolutionizing fundamental research into mechanics and materials that can enable high performance stretchable devices. The ability to operate electronic devices under various mechanically stressed states can provide a set of unique functionalities that are beyond the capabilities of conventional rigid electronics. Here, a distinctive microtectonic effect enabled oxygen-deficient, nanopatterned zinc oxide (ZnO) thin films on an elastomeric substrate are introduced to realize large area, stretchable, transparent, and ultraportable sensors. The unique surface structures are exploited to create stretchable gas and ultraviolet light sensors, where the functional oxide itself is stretchable, both of which outperform their rigid counterparts under room temperature conditions. Nanoscale ZnO features are embedded in an elastomeric matrix function as tunable diffraction gratings, capable of sensing displacements with nanometre accuracy. These devices and the microtectonic oxide thin film approach show promise in enabling functional, transparent, and wearable electronics.

Piezotronic Effect: An Emerging Mechanism for Sensing Applications

Strain-induced polarization charges in a piezoelectric semiconductor effectively modulate the band structure near the interface and charge carrier transport. Fundamental investigation of the piezotronic effect has attracted broad interest, and various sensing applications have been demonstrated. This brief review discusses the fundamentals of the piezotronic effect, followed by a review highlighting important applications for strain sensors, pressure sensors, chemical sensors, photodetectors, humidity sensors and temperature sensors. Finally, the review offers some perspectives and outlook for this new field of multi-functional sensing enabled by the piezotronic effect.

Enhanced piezo-humidity sensing of a Cd-ZnO nanowire nanogenerator as a self-powered/active gas sensor by coupling the piezoelectric screening effect and dopant displacement mechanism

Highly sensitive humidity sensing has been realized from a Cd-doped ZnO nanowire (NW) nanogenerator (NG) as a self-powered/active gas sensor. The piezoelectric output of the device acts not only as a power source, but also as a response signal to the relative humidity (RH) in the environment. The response of Cd-ZnO (1 : 10) NWs reached up to 85.7 upon exposure to 70% relative humidity, much higher than that of undoped ZnO NWs. Cd dopant can increase the number of oxygen vacancies in the NWs, resulting in more adsorption sites on the surface of the NWs. Upon exposure to a humid environment, a large amount of water molecules can displace the adsorbed oxygen ions on the surface of Cd-ZnO NWs. This procedure can influence the carrier density in Cd-ZnO NWs and vary the screening effect on the piezoelectric output. Our study can stimulate a research trend on exploring composite materials for piezo-gas sensing.

Enhancing Light Emission of ZnO-Nanofilm/Si-Micropillar Heterostructure Arrays by Piezo-Phototronic Effect

n-ZnO nanofilm/p-Si micropillar heterostructure light-emitting diode (LED) arrays for white light emissions are achieved and the light emission intensity of LED array is enhanced by 120% under -0.05% compressive strains. These results indicate a promising approach to fabricate Si-based light-emitting components with high performances enhanced by the piezo-phototronic effect, with potential applications in touchpad technology, personalized signatures, smart skin, and silicon-based photonic integrated circuits.

Piezotronic-effect enhanced drug metabolism and sensing on a single ZnO nanowire surface with the presence of human cytochrome P450

Cytochromes P450 (CYPs) enzymes are involved in catalyzing the metabolism of various endogenous and exogenous compounds. A rapid analysis of drug metabolism reactions by CYPs is required because they can metabolize 95% of current drugs in drug development and effective therapies. Here, we describe a study of piezotronic-effect enhanced drug metabolism and sensing by utilizing a single ZnO nanowire (ZnO NW) device. Owing to the unique hydrophobic feature of a ZnO NW that provides a desirable "microenvironment" for the immobilization of biomolecules, our device can effectively stimulate the tolbutamide metabolism by decorating a ZnO NW with cytochrome P4502C9/CYPs reductase (CYP2C9/CPR) microsomes. By applying an external compressive strain to the ZnO nanowire, the piezotronic effect, which plays a primary role in tuning the transport behavior of a ZnO NW utilizing the created piezoelectric polarization charges at the local interface, can effectively enhance the performance of the device. A theoretical model is proposed using an energy band diagram to explain the experimental data. This study provides a potential approach to study drug metabolism and trace drug detection based on the piezotronic effect.

Influence of the carrier concentration on the piezotronic effect in a ZnO/Au Schottky junction

The piezotronic effect, which utilizes the piezopotential to engineer the interface characteristics, has been widely exploited to design novel functional device or to optimize the device performance, which is intimately related to the carrier concentration. Here, by constructing a general Schottky diode, the piezotronic effect dependence on the carrier concentration was investigated systematically using ultraviolet (UV) illumination. Scanning Kelvin Probe Microscopy was employed to quantify the carrier concentration in ZnO nanorods under UV illumination. The results showed that the carrier concentration increases with increasing light intensity and an average value of up to 5.6 × 10(18) cm(-3) under 1.2 mW cm(-2) light illumination was obtained. Furthermore, with increasing UV light intensity, an increasingly imperceptible variation in the current-voltage characteristics under strain was observed, which finally disappeared under 1.2 mW cm(-2) light illumination. This phenomenon was attributed to the weakened modulation ability of the piezopotential due to the strengthened screening effect. In addition, the gradual disappearing in the barrier also contributed to the gradual disappearance of the piezotronic effect. This study provides an in-depth understanding of piezotronics, which could be extended to other piezoelectric devices and guide the design and optimization of piezotronic and even piezophototronic devices.

Highly efficient piezotronic strain sensors with symmetrical Schottky contacts on the monopolar surface of ZnO nanobelts

Piezotronic strain sensors have drawn a lot of attention since the piezotronic theory was established. In this work, we developed a flexible piezotronic strain sensor based on an indium-doped ZnO nanobelt, of which the top surface was the monopolar surface. By connecting two electrodes with the two ends of the top surface of the nanobelt, the strain sensor was constructed. Compared with a nanorod/nanowire based strain sensor, this monopolar surface device avoids the need to identify the polar direction. Under strain, a static potential with the same value and polarity was generated by the coupling effect of the piezoelectric effect and the Poisson effect. This induced piezopotential influenced the Schottky barrier heights at the interfaces of both the source and drain electrodes, resulting in current changes with the same trend at forward and reverse biases. By applying a series of periodical strains, the sensor showed clear, fast and accurate current responses. The gauge factor achieved for compressive strain was 4036. This type of piezotronic strain sensor with a polar surface facing upward presented a high performance and easier fabrication, showing promise for applications in electrical mechanical sensors and MEMS.

Piezotronic effect on ZnO nanowire film based temperature sensor

In this work, we demonstrated the first study of piezotronic effect as a potential means for measuring temperature by utilizing ZnO nanowire (NW) film. The film was synthesized by the wet chemical deposition method and transferred to a flexible substrate using photoresist. The primary role of piezotronic effect over geometrical and piezoresistive effect in the as-fabricated devices has been confirmed, and piezotronic effect on charge carrier transportation under different strains is subsequently studied. In addition, we also presented that the temperature sensing capability of as-fabricated NW film based piezotronic devices can be tuned by piezopotential, which exhibits dramatically enhanced sensitivity. A theoretical model is proposed to interpret the observed behaviors of the sensor. This study provides an effective method to fabricate temperature sensors with higher performance based on piezotronic effect in the future.

Single InAs nanowire room-temperature near-infrared photodetectors

Here we report InAs nanowire (NW) near-infrared photodetectors having a detection wavelength up to ∼1.5 μm. The single InAs NW photodetectors displayed minimum hysteresis with a high Ion/Ioff ratio of 10(5). At room temperature, the Schottky-Ohmic contacted photodetectors had an external photoresponsivity of ∼5.3 × 10(3) AW(-1), which is ∼300% larger than that of Ohmic-Ohmic contacted detectors (∼1.9 × 10(3) AW(-1)). A large enhancement in photoresponsivity (∼300%) had also been achieved in metal Au-cluster-decorated InAs NW photodetectors due to the formation of Schottky junctions at the InAs/Au cluster contacts. The photocurrent decreased when the photodetectors were exposed to ambient atmosphere because of the high surface electron concentration and rich surface defect states in InAs NWs. A theoretical model based on charge transfer and energy band change is proposed to explain this observed performance. To suppress the negative effects of surface defect states and atmospheric molecules, new InAs NW photodetectors with a half-wrapped top-gate had been fabricated by using 10 nm HfO2 as the top-gate dielectric.

Controllable fabrication of one-dimensional ZnO nanoarrays and their application in constructing silver trap structures

1-D ZnO NAs with controllable density and diameter have successfully been synthesized and found potential applications in silver trap construction.

Cellulose-based hydrophobic carbon aerogels as versatile and superior adsorbents for sewage treatment

Carbon aerogels have attracted considerable attention in fundamental investigation and potential applications in a myriad of fields.

Piezotronics and piezo-phototronics: fundamentals and applications

Technology advancement that can provide new solutions and enable augmented capabilities to complementary metal–oxide–semiconductor (CMOS)-based technology, such as active and adaptive interaction between machine and human/ambient, is highly desired. Piezotronic nanodevices and integrated systems exhibit potential in achieving these application goals. Utilizing the gating effect of piezopotential over carrier behaviors in piezoelectric semiconductor materials under externally applied deformation, the piezoelectric and semiconducting properties together with optoelectronic excitation processes can be coupled in these materials for the investigation of novel fundamental physics and the implementation of unprecedented applications. Piezopotential is created by the strain-induced ionic polarization in the piezoelectric semiconducting crystal. Piezotronics deal with the devices fabricated using the piezopotential as a ‘gate’ voltage to tune/control charge-carrier transport across the metal–semiconductor contact or the p–n junction. Piezo-phototronics is to use the piezopotential for controlling the carrier generation, transport, separation and/or recombination for improving the performance of optoelectronic devices. This review intends to provide an overview of the rapid progress in the emerging fields of piezotronics and piezo-phototronics. The concepts and results presented in this review show promises for implementing novel nano-electromechanical devices and integrating with micro/nano-electromechanical system technology to achieve augmented functionalities to the state-of-the-art CMOS technology that may find applications in the human–machine interfacing, active flexible/stretchable electronics, sensing, energy harvesting, biomedical diagnosis/therapy, and prosthetics.

Two-dimensional vanadium-doped ZnO nanosheet-based flexible direct current nanogenerator

Here, we report the synthesis of lead-free single-crystalline two-dimensional (2D) vanadium(V)-doped ZnO nanosheets (NSs) and their application for high-performance flexible direct current (DC) power piezoelectric nanogenerators (NGs). The vertically aligned ZnO nanorods (NRs) converted to NS networks by V doping. Piezoresponse force microscopy studies reveal that vertical V-doped ZnO NS exhibit typical ferroelectricity with clear phase loops, butterfly, and well-defined hysteresis loops with a piezoelectric charge coefficient of up to 4 pm/V, even in 2D nanostructures. From pristine ZnO NR-based NGs, alternating current (AC)-type output current was observed, while from V-doped ZnO NS-based NGs, a DC-type output current density of up to 1.0 μAcm(-2) was surprisingly obtained under the same vertical compressive force. The growth mechanism, ferroelectric behavior, charge inverted phenomena, and high piezoelectric output performance observed from the V-doped ZnO NS are discussed in terms of the formation of an ionic layer of [V(OH)4(-)], permanent electric dipole, and the doping-induced resistive behavior of ZnO NS.

Enhanced photodegradation of methyl orange with TiO₂ nanoparticles using a triboelectric nanogenerator

Methyl orange (MO) can be degraded by a photocatalytic process using TiO₂ under UV irradiation. The photo-generated holes and electrons can migrate to the surface of TiO₂ particles and serve as redox sources that react with adsorbed reactants, leading to the formation of superoxide radical anions, hydrogen peroxide and hydroxyl radicals involved in the oxidation of dye pollution. Here, we fabricated a polytetrafluoroethylene-Al based triboelectric nanogenerator (TENG) whose electric power output can be used for enhancing the photodegradation of MO with the presence of TiO₂ nanoparticles, because the TENG generated electric field can effectively boost the separation and restrain the recombination of photo-generated electrons and holes. Due to the photoelectrical coupling, the degradation percentages of MO for 120 min with and without TENG assistance are 76% and 27%, respectively. The fabricated TENGs have potential applications in wastewater treatment, water splitting, and pollution degradation.

Enhanced performance of flexible ZnO nanowire based room-temperature oxygen sensors by piezotronic effect

A flexible oxygen sensor based on individual ZnO nanowires is demonstrated with high sensitivity at room temperature and the influence of the piezotronic effect on the performance of this oxygen sensor is investigated. By applying a tensile strain, the already very high sensitivity due to the Schottky contact and pre-treatment of UV light is even further enhanced.