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Zhao K, He D, Liu X, Ren F, Wang J, Yan Y, Huang M, Wang Y, Zhang X. Enhance Carrier Diffusion of Monolayer MoSe 2 by Interface Engineering. ACS APPLIED MATERIALS & INTERFACES 2024; 16:34349-34357. [PMID: 38912925 DOI: 10.1021/acsami.4c05143] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/25/2024]
Abstract
Two-dimensional materials hold great potentials for beyond-CMOS (complementary metal-oxide-semiconductor) electronical and optoelectrical applications, and the development of field effect transistors (FET) with excellent performance using such materials is of particular interest. How to improve the performance of devices thus becomes an urgent issue. The performance of FETs depends greatly on the intrinsic electrical properties of the channel materials, meanwhile the device interface quality, such as extrinsic scattering of charged impurities, charge traps, and substrate surface roughness have a great influence on the performance. In this paper, the impact of the interface quality on the carrier diffusion behaviors of monolayer (ML) MoSe2 has been investigated by using an in situ ultrafast laser technique to avoid the surface contamination during device fabrication process. Two types of self-assembled monolayers (SAMs) are introduced to modify the gate dielectric surface through an interface engineering approach to obtain chemical-stable interfaces. The results showed that the transport properties of ML MoSe2 were enhanced after interface engineering, for example, the carrier mobility of ML MoSe2 was improved from ∼59.4 to ∼166.5 cm2 V-1 s-1 after the SAM modification. Meanwhile, the photocarrier dynamics of ML MoSe2 before and after interfacial engineering were also carefully studied. Our studies provide a feasible method for improving the carrier diffusion behaviors of such materials, and making them suited for application in future integrated circuit.
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Affiliation(s)
- Kun Zhao
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Dawei He
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Xiaojing Liu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Fangying Ren
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Jiarong Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Yige Yan
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Mohan Huang
- Department of Optical Engineering, Zhejiang A&F University, Linan 311300, P. R. China
| | - Yongsheng Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Xiaoxian Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
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Pham PV, Mai TH, Do HB, Vasundhara M, Nguyen VH, Nguyen T, Bui HV, Dao VD, Gupta RK, Ponnusamy VK, Park JH. Layer-by-layer thinning of two-dimensional materials. Chem Soc Rev 2024; 53:5190-5226. [PMID: 38586901 DOI: 10.1039/d3cs00817g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/09/2024]
Abstract
Etching technology - one of the representative modern semiconductor device makers - serves as a broad descriptor for the process of removing material from the surfaces of various materials, whether partially or entirely. Meanwhile, thinning technology represents a novel and highly specialized approach within the realm of etching technology. It indicates the importance of achieving an exceptionally sophisticated and precise removal of material, layer-by-layer, at the nanoscale. Notably, thinning technology has gained substantial momentum, particularly in top-down strategies aimed at pushing the frontiers of nano-worlds. This rapid development in thinning technology has generated substantial interest among researchers from diverse backgrounds, including those in the fields of chemistry, physics, and engineering. Precisely and expertly controlling the layer numbers of 2D materials through the thinning procedure has been considered as a crucial step. This is because the thinning processes lead to variations in the electrical and optical characteristics. In this comprehensive review, the strategies for top-down thinning of representative 2D materials (e.g., graphene, black phosphorus, MoS2, h-BN, WS2, MoSe2, and WSe2) based on conventional plasma-assisted thinning, integrated cyclic plasma-assisted thinning, laser-assisted thinning, metal-assisted splitting, and layer-resolved splitting are covered in detail, along with their mechanisms and benefits. Additionally, this review further explores the latest advancements in terms of the potential advantages of semiconductor devices achieved by top-down 2D material thinning procedures.
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Affiliation(s)
- Phuong V Pham
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - The-Hung Mai
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - Huy-Binh Do
- Faculty of Applied Science, Ho Chi Minh City University of Technology and Education, Thu Duc 700000, Vietnam
| | - M Vasundhara
- Polymers and Functional Materials Department, CSIR-Indian Institute of Chemical Technology, Tarnaka, Hyderabad 500007, India
| | - Van-Huy Nguyen
- Centre for Herbal Pharmacology and Environmental Sustainability, Chettinad Hospital and Research Institute, Chettinad Academy of Research and Education, Kelambakkam-603103, Tamil Nadu, India
| | - Trieu Nguyen
- Shared Research Facilities, West Virginia University, Morgantown, WV 26506, USA
| | - Hao Van Bui
- Faculty of Materials Science and Engineering and Faculty of Electrical and Electronic Engineering, Phenikaa University, Hanoi 12116, Vietnam
| | - Van-Duong Dao
- Faculty of Biotechnology, Chemistry, and Environmental Engineering, Phenikaa University, Hanoi 100000, Vietnam
| | - Ram K Gupta
- Department of Chemistry, Kansas Polymer Research Center, Pittsburg State University, Pittsburg, KS-66762, USA
| | - Vinoth Kumar Ponnusamy
- Department of Medicinal and Applied Chemistry, Kaohsiung Medical University, Kaohsiung 807, Taiwan.
- Research Center for Precision Environmental Medicine, Kaohsiung Medical University, Kaohsiung 807, Taiwan
- Department of Medical Research, Kaohsiung Medical University Hospital, Kaohsiung 807, Taiwan
- Department of Chemistry, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, South Korea.
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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Coelho BJ, Pinto JV, Martins J, Rovisco A, Barquinha P, Fortunato E, Baptista PV, Martins R, Igreja R. Parylene C as a Multipurpose Material for Electronics and Microfluidics. Polymers (Basel) 2023; 15:polym15102277. [PMID: 37242852 DOI: 10.3390/polym15102277] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Revised: 04/28/2023] [Accepted: 05/05/2023] [Indexed: 05/28/2023] Open
Abstract
Poly(p-xylylene) derivatives, widely known as Parylenes, have been considerably adopted by the scientific community for several applications, ranging from simple passive coatings to active device components. Here, we explore the thermal, structural, and electrical properties of Parylene C, and further present a variety of electronic devices featuring this polymer: transistors, capacitors, and digital microfluidic (DMF) devices. We evaluate transistors produced with Parylene C as a dielectric, substrate, and encapsulation layer, either semitransparent or fully transparent. Such transistors exhibit steep transfer curves and subthreshold slopes of 0.26 V/dec, negligible gate leak currents, and fair mobilities. Furthermore, we characterize MIM (metal-insulator-metal) structures with Parylene C as a dielectric and demonstrate the functionality of the polymer deposited in single and double layers under temperature and AC signal stimuli, mimicking the DMF stimuli. Applying temperature generally leads to a decrease in the capacitance of the dielectric layer, whereas applying an AC signal leads to an increase in said capacitance for double-layered Parylene C only. By applying the two stimuli, the capacitance seems to suffer from a balanced influence of both the separated stimuli. Lastly, we demonstrate that DMF devices with double-layered Parylene C allow for faster droplet motion and enable long nucleic acid amplification reactions.
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Affiliation(s)
- Beatriz J Coelho
- CENIMAT|i3N, Department of Materials Science, NOVA School of Science and Technology, Campus de Caparica, NOVA University of Lisbon and CEMOP/UNINOVA, 2829-516 Caparica, Portugal
- UCIBIO, I4HB, Department of Life Sciences, NOVA School of Science and Technology, Campus de Caparica, NOVA University of Lisbon, 2829-516 Caparica, Portugal
| | - Joana V Pinto
- CENIMAT|i3N, Department of Materials Science, NOVA School of Science and Technology, Campus de Caparica, NOVA University of Lisbon and CEMOP/UNINOVA, 2829-516 Caparica, Portugal
| | - Jorge Martins
- CENIMAT|i3N, Department of Materials Science, NOVA School of Science and Technology, Campus de Caparica, NOVA University of Lisbon and CEMOP/UNINOVA, 2829-516 Caparica, Portugal
| | - Ana Rovisco
- CENIMAT|i3N, Department of Materials Science, NOVA School of Science and Technology, Campus de Caparica, NOVA University of Lisbon and CEMOP/UNINOVA, 2829-516 Caparica, Portugal
| | - Pedro Barquinha
- CENIMAT|i3N, Department of Materials Science, NOVA School of Science and Technology, Campus de Caparica, NOVA University of Lisbon and CEMOP/UNINOVA, 2829-516 Caparica, Portugal
| | - Elvira Fortunato
- CENIMAT|i3N, Department of Materials Science, NOVA School of Science and Technology, Campus de Caparica, NOVA University of Lisbon and CEMOP/UNINOVA, 2829-516 Caparica, Portugal
| | - Pedro V Baptista
- UCIBIO, I4HB, Department of Life Sciences, NOVA School of Science and Technology, Campus de Caparica, NOVA University of Lisbon, 2829-516 Caparica, Portugal
| | - Rodrigo Martins
- CENIMAT|i3N, Department of Materials Science, NOVA School of Science and Technology, Campus de Caparica, NOVA University of Lisbon and CEMOP/UNINOVA, 2829-516 Caparica, Portugal
| | - Rui Igreja
- CENIMAT|i3N, Department of Materials Science, NOVA School of Science and Technology, Campus de Caparica, NOVA University of Lisbon and CEMOP/UNINOVA, 2829-516 Caparica, Portugal
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5
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Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors. Polymers (Basel) 2023; 15:polym15061395. [PMID: 36987175 PMCID: PMC10051946 DOI: 10.3390/polym15061395] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2023] [Revised: 03/04/2023] [Accepted: 03/08/2023] [Indexed: 03/16/2023] Open
Abstract
Two-dimensional (2D) materials are considered attractive semiconducting layers for emerging field-effect transistors owing to their unique electronic and optoelectronic properties. Polymers have been utilized in combination with 2D semiconductors as gate dielectric layers in field-effect transistors (FETs). Despite their distinctive advantages, the applicability of polymer gate dielectric materials for 2D semiconductor FETs has rarely been discussed in a comprehensive manner. Therefore, this paper reviews recent progress relating to 2D semiconductor FETs based on a wide range of polymeric gate dielectric materials, including (1) solution-based polymer dielectrics, (2) vacuum-deposited polymer dielectrics, (3) ferroelectric polymers, and (4) ion gels. Exploiting appropriate materials and corresponding processes, polymer gate dielectrics have enhanced the performance of 2D semiconductor FETs and enabled the development of versatile device structures in energy-efficient ways. Furthermore, FET-based functional electronic devices, such as flash memory devices, photodetectors, ferroelectric memory devices, and flexible electronics, are highlighted in this review. This paper also outlines challenges and opportunities in order to help develop high-performance FETs based on 2D semiconductors and polymer gate dielectrics and realize their practical applications.
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6
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Ji J, Choi JH. Recent progress in 2D hybrid heterostructures from transition metal dichalcogenides and organic layers: properties and applications in energy and optoelectronics fields. NANOSCALE 2022; 14:10648-10689. [PMID: 35839069 DOI: 10.1039/d2nr01358d] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Atomically thin transition metal dichalcogenides (TMDs) present extraordinary optoelectronic, electrochemical, and mechanical properties that have not been accessible in bulk semiconducting materials. Recently, a new research field, 2D hybrid heteromaterials, has emerged upon integrating TMDs with molecular systems, including organic molecules, polymers, metal-organic frameworks, and carbonaceous materials, that can tailor the TMD properties and exploit synergetic effects. TMD-based hybrid heterostructures can meet the demands of future optoelectronics, including supporting flexible, transparent, and ultrathin devices, and energy-based applications, offering high energy and power densities with long cycle lives. To realize such applications, it is necessary to understand the interactions between the hybrid components and to develop strategies for exploiting the distinct benefits of each component. Here, we provide an overview of the current understanding of the new phenomena and mechanisms involved in TMD/organic hybrids and potential applications harnessing such valuable materials in an insightful way. We highlight recent discoveries relating to multicomponent hybrid materials. Finally, we conclude this review by discussing challenges related to hybrid heteromaterials and presenting future directions and opportunities in this research field.
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Affiliation(s)
- Jaehoon Ji
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
| | - Jong Hyun Choi
- School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
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7
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Weber M, Vorobev D, Viöl W. Microwave Plasma-Enhanced Parylene–Metal Multilayer Design from Metal Salts. NANOMATERIALS 2022; 12:nano12152540. [PMID: 35893510 PMCID: PMC9330860 DOI: 10.3390/nano12152540] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/15/2022] [Revised: 07/10/2022] [Accepted: 07/22/2022] [Indexed: 11/17/2022]
Abstract
In this paper, a new approach for the synthesis of Parylene–metal multilayers was examined. The metal layers were derived from a metal salt solution in methanol and a post-drying plasma reduction treatment. This process was designed as a one-pot synthesis, which needs a very low amount of resources and energy compared with those using electron beam sputtering processes. The Parylene coatings were obtained after reduction plasma treatments with Parylene C. Therefore, a Parylene coating device with an included plasma microwave generator was used to ensure the character of a one-pot synthesis. This process provided ultra-thin metal salt layers in the range of 1–2 nm for layer thickness and 10–30 nm for larger metal salt agglomerates all over the metal salt layer. The Parylene layers were obtained with thicknesses between approx. 4.5 and 4.7 µm from ellipsometric measurements and 5.7–6.3 µm measured by white light reflectometry. Tensile strength analysis showed an orthogonal pulling stress resistance of around 4500 N. A surface roughness of 4–8 nm for the metal layers, as well as 20–29 nm for the Parylene outer layer, were measured. The wettability for non-polar liquids with a contact angle of 30° was better than for polar liquids, such as water, achieving 87° on the Parylene C surfaces.
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Affiliation(s)
- Mirco Weber
- Faculty of Enginering and Health, HAWK University of Applied Sciences and Arts, Von-Ossietzky-Straße 99/100, 37085 Göttingen, Germany; (M.W.); (D.V.)
- Institute of Inorganic Chemistry, Georg August University of Göttingen, Tammannstraße 4, 37077 Göttingen, Germany
| | - David Vorobev
- Faculty of Enginering and Health, HAWK University of Applied Sciences and Arts, Von-Ossietzky-Straße 99/100, 37085 Göttingen, Germany; (M.W.); (D.V.)
| | - Wolfgang Viöl
- Faculty of Enginering and Health, HAWK University of Applied Sciences and Arts, Von-Ossietzky-Straße 99/100, 37085 Göttingen, Germany; (M.W.); (D.V.)
- Fraunhofer Institute for Surface Engineering and Thin Films, Application Center for Plasma and Photonic, Von-Ossietzky-Straße 100, 37085 Göttingen, Germany
- Correspondence: ; Tel.: +49-551-3705-218
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Geng G, Wu E, Xu L, Hu X, Miao X, Zou J, Wu S, Liu J, Liu Y, He Z. Dielectric engineering enable to lateral anti-ambipolar MoTe 2heterojunction. NANOTECHNOLOGY 2022; 33:175704. [PMID: 35008081 DOI: 10.1088/1361-6528/ac49c2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2021] [Accepted: 01/10/2022] [Indexed: 06/14/2023]
Abstract
Atomically two-dimensional (2D) materials have generated widespread interest for novel electronics and optoelectronics. Specially, owing to atomically thin 2D structure, the electronic bandgap of 2D semiconductors can be engineered by manipulating the surrounding dielectric environment. In this work, we develop an effective and controllable approach to manipulate dielectric properties of h-BN through gallium ions (Ga+) implantation for the first time. And the maximum surface potential difference between the intrinsic h-BN (h-BN) and the Ga+implanted h-BN (Ga+-h-BN) is up to 1.3 V, which is characterized by Kelvin probe force microscopy. More importantly, the MoTe2transistor stacked on Ga+-h-BN exhibits p-type dominated transfer characteristic, while the MoTe2transistor stacked on the intrinsic h-BN behaves as n-type, which enable to construct MoTe2heterojunction through dielectric engineering of h-BN. The dielectric engineering also provides good spatial selectivity and allows to build MoTe2heterojunction based on a single MoTe2flake. The developed MoTe2heterojunction shows stable anti-ambipolar behaviour. Furthermore, we preliminarily implemented a ternary inverter based on anti-ambipolar MoTe2heterojunction. Ga+implantation assisted dielectric engineering provides an effective and generic approach to modulate electric bandgap for a wide variety of 2D materials. And the implementation of ternary inverter based on anti-ambipolar transistor could lead to new energy-efficient logical circuit and system designs in semiconductors.
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Affiliation(s)
- Guangyu Geng
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Enxiu Wu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Linyan Xu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Xiaodong Hu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Xiaopu Miao
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Jing Zou
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Sen Wu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Jing Liu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Yang Liu
- Bruker (Beijing) Scientific Technology Co., Ltd, Beijing 100081, People's Republic of China
| | - Zhongdu He
- Thermofisher Scientific Co., Ltd, MSD, Shanghai NNP, People's Republic of China
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Sun Z, Ciarrocchi A, Tagarelli F, Marin JFG, Watanabe K, Taniguchi T, Kis A. Excitonic transport driven by repulsive dipolar interaction in a van der Waals heterostructure. NATURE PHOTONICS 2022; 16:79-85. [PMID: 34992677 PMCID: PMC7612161 DOI: 10.1038/s41566-021-00908-6] [Citation(s) in RCA: 26] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Dipolar bosonic gases are currently the focus of intensive research due to their interesting many-body physics in the quantum regime. Their experimental embodiments range from Rydberg atoms to GaAs double quantum wells and van der Waals heterostructures built from transition metal dichalcogenides. Although quantum gases are very dilute, mutual interactions between particles could lead to exotic many-body phenomena such as Bose-Einstein condensation and high-temperature superfluidity. Here, we report the effect of repulsive dipolar interactions on the dynamics of interlayer excitons in the dilute regime. By using spatial and time-resolved photoluminescence imaging, we observe the dynamics of exciton transport, enabling a direct estimation of the exciton mobility. The presence of interactions significantly modifies the diffusive transport of excitons, effectively acting as a source of drift force and enhancing the diffusion coefficient by one order of magnitude. The repulsive dipolar interactions combined with the electrical control of interlayer excitons opens up appealing new perspectives for excitonic devices.
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Affiliation(s)
- Zhe Sun
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Correspondence should be addressed to: Zhe Sun () and Andras Kis ()
| | - Alberto Ciarrocchi
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Fedele Tagarelli
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Juan Francisco Gonzalez Marin
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Andras Kis
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Correspondence should be addressed to: Zhe Sun () and Andras Kis ()
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10
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Lee EK, Abdullah H, Torricelli F, Lee DH, Ko JK, Kim HH, Yoo H, Oh JH. Boosting the Optoelectronic Properties of Molybdenum Diselenide by Combining Phase Transition Engineering with Organic Cationic Dye Doping. ACS NANO 2021; 15:17769-17779. [PMID: 34767355 DOI: 10.1021/acsnano.1c05936] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional layered transition metal dichalcogenides (TMDs) have been investigated intensively as next-generation semiconducting materials. However, conventional TMD-based devices exhibit large contact resistance at the interface between the TMD and the metal electrode because of Fermi level pinning and the Schottky barrier, which results in poor charge injection. Here, we present enhanced charge transport characteristics in molybdenum diselenide (MoSe2) by means of a sequential engineering process called PESOD-2H/1T (i.e., phase transition engineering combined with surface transfer organic cationic dye doping; 2H and 1T represent the trigonal prismatic and octahedral phases, respectively). Substantial improvements are observed in PESOD-processed MoSe2 phototransistors, specifically, an approximately 40 000-fold increase in effective carrier mobility and a 100 000-fold increase in photoresponsivity, compared with the mobility and photoresponsivity of intact MoSe2 phototransistors. Moreover, the PESOD-processed MoSe2 phototransistor on a flexible substrate maintains its optoelectronic properties under tensile stress, with a bending radius of 5 mm.
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Affiliation(s)
- Eun Kwang Lee
- Weldon School of Biomedical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- MLCC Development Team, Samsung Electro-Mechanics, 150, Maeyeong-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16674, Republic of Korea
| | - Hanum Abdullah
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 37673, Republic of Korea
| | - Fabrizio Torricelli
- Department of Information Engineering, University of Brescia, Via Branze 38, 25123 Brescia, Italy
| | - Dong Hyun Lee
- Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea
| | - Jae Kwon Ko
- Department of Energy Engineering Convergence & School of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Hyun Ho Kim
- Department of Energy Engineering Convergence & School of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Hocheon Yoo
- Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea
| | - Joon Hak Oh
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
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11
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Sunwoo H, Choi W. Enhanced performance of multilayer MoS 2transistors encapsulated with a photoresist. NANOTECHNOLOGY 2021; 32:42LT01. [PMID: 34271557 DOI: 10.1088/1361-6528/ac1542] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2021] [Accepted: 07/16/2021] [Indexed: 06/13/2023]
Abstract
We report the enhanced performance of multilayer MoS2transistors by AZ®5214E photoresist encapsulation. The MoS2transistors with SiO2bottom-gate dielectrics exhibited an average increase of 4× in the on/off-current ratio and a 50% increase in the field-effect mobility after photoresist encapsulation. The Y-function method further showed a decrease of 87% in the contact resistance and a 30% increase in the intrinsic carrier mobility, suggesting that photoresist encapsulation provides not only n-type doping but also dielectric screening. The Raman spectra of the photoresist-encapsulated MoS2also suggest n-type doping, which may be due to the electropositive hydroxyl groups in the photoresist. The operation of the photoresist-encapsulated MoS2transistors remained stable in ambient air for at least one month. These results demonstrate that simple photoresist encapsulation can be an effective performance booster of MoS2and other transition metal dichalcogenides transistors.
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Affiliation(s)
- Hyeyeon Sunwoo
- School of Materials Science & Engineering, Kookmin University, Seoul 02707, Republic of Korea
| | - Woong Choi
- School of Materials Science & Engineering, Kookmin University, Seoul 02707, Republic of Korea
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12
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Wang Y, Liu S, Li Q, Quhe R, Yang C, Guo Y, Zhang X, Pan Y, Li J, Zhang H, Xu L, Shi B, Tang H, Li Y, Yang J, Zhang Z, Xiao L, Pan F, Lu J. Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2021; 84:056501. [PMID: 33761489 DOI: 10.1088/1361-6633/abf1d4] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2020] [Accepted: 03/24/2021] [Indexed: 06/12/2023]
Abstract
Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal properties, which hold potential in electronic, optoelectronic, thermoelectric applications, and so forth. The field-effect transistor (FET), a semiconductor gated with at least three terminals, is pervasively exploited as the device geometry for these applications. For lack of effective and stable substitutional doping techniques, direct metal contact is often used in 2DSC FETs to inject carriers. A Schottky barrier (SB) generally exists in the metal-2DSC junction, which significantly affects and even dominates the performance of most 2DSC FETs. Therefore, low SB or Ohmic contact is highly preferred for approaching the intrinsic characteristics of the 2DSC channel. In this review, we systematically introduce the recent progress made in theoretical prediction of the SB height (SBH) in the 2DSC FETs and the efforts made both in theory and experiments to achieve low SB contacts. From the comparison between the theoretical and experimentally observed SBHs, the emerging first-principles quantum transport simulation turns out to be the most powerful theoretical tool to calculate the SBH of a 2DSC FET. Finally, we conclude this review from the viewpoints of state-of-the-art electrode designs for 2DSC FETs.
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Affiliation(s)
- Yangyang Wang
- Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, People's Republic of China
| | - Shiqi Liu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Qiuhui Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ruge Quhe
- State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
| | - Chen Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ying Guo
- School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, People's Republic of China
| | - Xiuying Zhang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Yuanyuan Pan
- State Key Laboratory of Heavy Oil Processing, Institute of New Energy, College of Chemical Engineering, China University of Petroleum (East China), Qingdao, 266580, People's Republic of China
| | - Jingzhen Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Han Zhang
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Bowen Shi
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Hao Tang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ying Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, People's Republic of China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Lin Xiao
- Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, People's Republic of China
| | - Feng Pan
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen 518055, People's Republic of China
| | - Jing Lu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, People's Republic of China
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13
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Ahmad W, Gong Y, Abbas G, Khan K, Khan M, Ali G, Shuja A, Tareen AK, Khan Q, Li D. Evolution of low-dimensional material-based field-effect transistors. NANOSCALE 2021; 13:5162-5186. [PMID: 33666628 DOI: 10.1039/d0nr07548e] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Field-effect transistors (FETs) have tremendous applications in the electronics industry due to their outstanding features such as small size, easy fabrication, compatibility with integrated electronics, high sensitivity, rapid detection and easy measuring procedures. However, to meet the increasing demand of the electronics industry, efficient FETs with controlled short channel effects, enhanced surface stability, reduced size, and superior performances based on low-dimensional materials are desirable. In this review, we present the developmental roadmap of FETs from conventional to miniaturized devices and highlight their prospective applications in the field of optoelectronic devices. Initially, a detailed study of the general importance of bulk and low-dimensional materials is presented. Then, recent advances in low-dimensional material heterostructures, classification of FETs, and the applications of low-dimensional materials in field-effect transistors and photodetectors are presented in detail. In addition, we also describe current issues in low-dimensional material-based FETs and propose potential approaches to address these issues, which are crucial for developing electronic and optoelectronic devices. This review will provide guidelines for low-dimensional material-based FETs with high performance and advanced applications in the future.
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Affiliation(s)
- Waqas Ahmad
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Youning Gong
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Ghulam Abbas
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Karim Khan
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Maaz Khan
- Nanomaterials Research Group, Physics Division, PINSTECH, Nilore 45650, Islamabad, Pakistan
| | - Ghafar Ali
- Nanomaterials Research Group, Physics Division, PINSTECH, Nilore 45650, Islamabad, Pakistan
| | - Ahmed Shuja
- Centre for Advanced Electronics & Photovoltaic Engineering, International Islamic University, Islamabad, Pakistan
| | - Ayesha Khan Tareen
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Qasim Khan
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Delong Li
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
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14
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Stanley LJ, Chuang HJ, Zhou Z, Koehler MR, Yan J, Mandrus DG, Popović D. Low-Temperature 2D/2D Ohmic Contacts in WSe 2 Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition. ACS APPLIED MATERIALS & INTERFACES 2021; 13:10594-10602. [PMID: 33617715 DOI: 10.1021/acsami.0c21440] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multiterminal WSe2 Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal-insulator transition. We demonstrate that the WSe2 devices exhibit Ohmic behavior down to 0.25 K and at low enough excitation voltages to avoid current-heating effects. Additionally, the high-quality hBN-encapsulated WSe2 devices in ideal Hall-bar geometry enable us to accurately determine the carrier density. Measurements of the temperature (T) and density (ns) dependence of the conductivity σ(T, ns) demonstrate scaling behavior consistent with a metal-insulator quantum phase transition driven by electron-electron interactions but where disorder-induced local magnetic moments are also present. Our findings pave the way for further studies of the fundamental quantum mechanical properties of 2D transition metal dichalcogenides using the same contact engineering.
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Affiliation(s)
- Lily J Stanley
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States
- Department of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Hsun-Jen Chuang
- Physics and Astronomy Department, Wayne State University, Detroit, Michigan 48202, United States
| | - Zhixian Zhou
- Physics and Astronomy Department, Wayne State University, Detroit, Michigan 48202, United States
| | - Michael R Koehler
- Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Jiaqiang Yan
- Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, United States
- Oak Ridge National Lab, Oak Ridge, Tennessee 37830, United States
| | - David G Mandrus
- Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, United States
- Oak Ridge National Lab, Oak Ridge, Tennessee 37830, United States
| | - Dragana Popović
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States
- Department of Physics, Florida State University, Tallahassee, Florida 32306, United States
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15
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Soubelet P, Klein J, Wierzbowski J, Silvioli R, Sigger F, Stier AV, Gallo K, Finley JJ. Charged Exciton Kinetics in Monolayer MoSe 2 near Ferroelectric Domain Walls in Periodically Poled LiNbO 3. NANO LETTERS 2021; 21:959-966. [PMID: 33428406 DOI: 10.1021/acs.nanolett.0c03810] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Monolayer semiconducting transition metal dichalcogenides are a strongly emergent platform for exploring quantum phenomena in condensed matter, building novel optoelectronic devices with enhanced functionalities. Because of their atomic thickness, their excitonic optical response is highly sensitive to their dielectric environment. In this work, we explore the optical properties of monolayer thick MoSe2 straddling domain wall boundaries in periodically poled LiNbO3. Spatially resolved photoluminescence experiments reveal spatial sorting of charge and photogenerated neutral and charged excitons across the boundary. Our results reveal evidence for extremely large in-plane electric fields of ≃4000 kV/cm at the domain wall whose effect is manifested in exciton dissociation and routing of free charges and trions toward oppositely poled domains and a nonintuitive spatial intensity dependence. By modeling our result using drift-diffusion and continuity equations, we obtain excellent qualitative agreement with our observations and have explained the observed spatial luminescence modulation using realistic material parameters.
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Affiliation(s)
- Pedro Soubelet
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748, Garching, Germany
| | - Julian Klein
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748, Garching, Germany
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jakob Wierzbowski
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748, Garching, Germany
| | - Riccardo Silvioli
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748, Garching, Germany
| | - Florian Sigger
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748, Garching, Germany
| | - Andreas V Stier
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748, Garching, Germany
| | - Katia Gallo
- Department of Applied Physics, KTH Royal Institute of Technology, SE-106 91 Stockholm, Sweden
| | - Jonathan J Finley
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748, Garching, Germany
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16
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Ornelas CD, Bowman A, Walmsley TS, Wang T, Andrews K, Zhou Z, Xu YQ. Ultrafast Photocurrent Response and High Detectivity in Two-Dimensional MoSe 2-based Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2020; 12:46476-46482. [PMID: 32867473 DOI: 10.1021/acsami.0c12155] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials have garnered great attention on account of their novel properties and potential to advance modern technology. Recent studies have demonstrated that TMDCs can be utilized to create high-performing heterostructures with combined functionality of the individual layers and new phenomena at these interfaces. Here, we report an ultrafast photoresponse within MoSe2-based heterostructures in which heavily p-doped WSe2 and MoS2 flakes share an undoped MoSe2 channel, allowing us to directly compare the optoelectronic properties of MoSe2-based heterojunctions with different 2D materials. Strong photocurrent signals have been observed in both MoSe2-WSe2 and MoSe2-MoS2 heterojunctions with a photoresponse time constant of ∼16 μs, surmounting previous MoSe2-based devices by three orders of magnitude. Further studies have shown that the fast response is independent of the integrated 2D materials (WSe2 or MoS2) but is likely attributed to the high carrier mobility of 260 cm2 V-1 s-1 in the undoped MoSe2 channel as well as the greatly reduced Schottky barriers and near absence of interface states at MoSe2-WSe2/MoS2 heterojunctions, which lead to reduced carrier transit time and thus short photocurrent response time. Lastly, a high detectivity on the order of ∼1014 Jones has been achieved in MoSe2-based heterojunctions, which supersedes current industry standards. These fundamental studies not only shed light on photocurrent generation mechanisms in MoSe2-based heterojunctions but also open up new avenues for engineering future high-performance 2D optoelectronic devices.
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Affiliation(s)
- Christian D Ornelas
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States of America
| | - Arthur Bowman
- Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, United States of America
| | - Thayer S Walmsley
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States of America
| | - Tianjiao Wang
- Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Kraig Andrews
- Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, United States of America
| | - Zhixian Zhou
- Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, United States of America
| | - Ya-Qiong Xu
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States of America
- Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, United States
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17
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Somvanshi D, Ber E, Bailey CS, Pop E, Yalon E. Improved Current Density and Contact Resistance in Bilayer MoSe 2 Field Effect Transistors by AlO x Capping. ACS APPLIED MATERIALS & INTERFACES 2020; 12:36355-36361. [PMID: 32678569 PMCID: PMC7588022 DOI: 10.1021/acsami.0c09541] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Atomically thin semiconductors are of interest for future electronics applications, and much attention has been given to monolayer (1L) sulfides, such as MoS2, grown by chemical vapor deposition (CVD). However, reports on the electrical properties of CVD-grown selenides, and MoSe2 in particular, are scarce. Here, we compare the electrical properties of 1L and bilayer (2L) MoSe2 grown by CVD and capped by sub-stoichiometric AlOx. The 2L channels exhibit ∼20× lower contact resistance (RC) and ∼30× larger current density compared with 1L channels. RC is further reduced by >5× with AlOx capping, which enables improved transistor current density. Overall, 2L AlOx-capped MoSe2 transistors (with ∼500 nm channel length) achieve improved current density (∼65 μA/μm at VDS = 4 V), a good Ion/Ioff ratio of >106, and an RC of ∼60 kΩ·μm. The weaker performance of 1L devices is due to their sensitivity to processing and ambient. Our results suggest that 2L (or few layers) is preferable to 1L for improved electronic properties in applications that do not require a direct band gap, which is a key finding for future two-dimensional electronics.
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Affiliation(s)
- Divya Somvanshi
- Viterbi
Department of Electrical Engineering, Technion-Israel
Institute of Technology, Haifa 32000, Israel
| | - Emanuel Ber
- Viterbi
Department of Electrical Engineering, Technion-Israel
Institute of Technology, Haifa 32000, Israel
| | - Connor S. Bailey
- Department
of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Eric Pop
- Department
of Electrical Engineering, Stanford University, Stanford, California 94305, United States
- Department
of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Precourt
Institute for Energy, Stanford University, Stanford, California 94305, United States
| | - Eilam Yalon
- Viterbi
Department of Electrical Engineering, Technion-Israel
Institute of Technology, Haifa 32000, Israel
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18
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Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe 2 and MoS 2: A Review. MICROMACHINES 2020; 11:mi11080750. [PMID: 32751953 PMCID: PMC7465435 DOI: 10.3390/mi11080750] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/03/2020] [Revised: 07/26/2020] [Accepted: 07/28/2020] [Indexed: 01/30/2023]
Abstract
While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps and a responsivity of <10 mA/W across all wavelengths. Conventional Si photodiodes have a response time of about 50 ps with maximum responsivity of about 500 mA/W at 880 nm. Although the responsivity of TMDCs can reach beyond 104 A/W, response times fall short by 3–6 orders of magnitude compared to graphene, commercial Si, and InGaAs photodiodes. Slow response times limit their application in devices requiring high frequency. Here, we highlight some of the recent developments made with visible and near-infrared photodetectors based on two dimensional SnSe2 and MoS2 materials and their performance with the main emphasis on the role played by the mobility of the constituency semiconductors to response/recovery times associated with the hetero-structures.
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19
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Njeim J, Alamarguy D, Tu X, Durnez A, Lafosse X, Chretien P, Madouri A, Ren Z, Brunel D. Effect of the Al 2O 3 Deposition Method on Parylene C: Highlights on a Nanopillar-Shaped Surface. ACS OMEGA 2020; 5:15828-15834. [PMID: 32656403 PMCID: PMC7345438 DOI: 10.1021/acsomega.0c00735] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/19/2020] [Accepted: 06/05/2020] [Indexed: 06/11/2023]
Abstract
Parylene C (PC) has attracted tremendous attention throughout the past few years due to its extraordinary properties such as high mechanical strength and biocompatibility. When used as a flexible substrate and combined with high-κ dielectrics such as aluminum oxide (Al2O3), the Al2O3/PC stack becomes very compelling for various applications in fields such as biomedical microsystems and microelectronics. For the latter, the atomic layer deposition of oxides is particularly needed as it allows the deposition of high-quality and nanometer-scale oxide thicknesses. In this work, atomic layer deposition (ALD) and electron beam physical vapor deposition (EBPVD) of Al2O3 on a 15 μm-thick PC layer are realized and their effects on the Al2O3/PC resulting stack are investigated via X-ray photoelectron spectroscopy combined with atomic force microscopy. An ALD-based Al2O3/PC stack is found to result in a nanopillar-shaped surface, while an EBPVD-based Al2O3/PC stack yields an expected smooth surface. In both cases, the Al2O3/PC stack can be easily peeled off from the reusable SiO2 substrate, resulting in a flexible Al2O3/PC film. These fabrication processes are economic, high yielding, and suitable for mass production. Although ALD is particularly appreciated in the semiconducting industry, EBPVD is here found to be better for the realization of the Al2O3/PC flexible substrate for micro- and nanoelectronics.
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Affiliation(s)
- Joanna Njeim
- Sorbonne
Université, CNRS, Laboratoire de Génie Electrique et
Electronique de Paris, 75252 Paris, France
| | - David Alamarguy
- Université
Paris-Saclay, CentraleSupélec, CNRS, Laboratoire de Génie
Electrique et Electronique de Paris, 91192 Gif-sur-Yvette, France
| | - Xiaolong Tu
- Sorbonne
Université, PSL Université, Ecole Normale Supérieure,
PASTEUR, Département de Chimie, CNRS, 75005 Paris, France
| | - Alan Durnez
- Université
Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Xavier Lafosse
- Université
Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Pascal Chretien
- Université
Paris-Saclay, CentraleSupélec, CNRS, Laboratoire de Génie
Electrique et Electronique de Paris, 91192 Gif-sur-Yvette, France
| | - Ali Madouri
- Université
Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Zhuoxiang Ren
- Sorbonne
Université, CNRS, Laboratoire de Génie Electrique et
Electronique de Paris, 75252 Paris, France
| | - David Brunel
- Sorbonne
Université, CNRS, Laboratoire de Génie Electrique et
Electronique de Paris, 75252 Paris, France
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20
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Hussain M, Aftab S, Jaffery SHA, Ali A, Hussain S, Cong DN, Akhtar R, Seo Y, Eom J, Gautam P, Noh H, Jung J. Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection. Sci Rep 2020; 10:9374. [PMID: 32523025 PMCID: PMC7286883 DOI: 10.1038/s41598-020-66263-8] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2020] [Accepted: 04/21/2020] [Indexed: 11/09/2022] Open
Abstract
2D layered germanium selenide (GeSe) with p-type conductivity is incorporated with asymmetric contact electrode of chromium/Gold (Cr/Au) and Palladium/Gold (Pd/Au) to design a self-biased, high speed and an efficient photodetector. The photoresponse under photovoltaic effect is investigated for the wavelengths of light (i.e. ~220, ~530 and ~850 nm). The device exhibited promising figures of merit required for efficient photodetection, specifically the Schottky barrier diode is highly sensitive to NIR light irradiation at zero voltage with good reproducibility, which is promising for the emergency application of fire detection and night vision. The high responsivity, detectivity, normalized photocurrent to dark current ratio (NPDR), noise equivalent power (NEP) and response time for illumination of light (~850 nm) are calculated to be 280 mA/W, 4.1 × 109 Jones, 3 × 107 W−1, 9.1 × 10−12 WHz−1/2 and 69 ms respectively. The obtained results suggested that p-GeSe is a novel candidate for SBD optoelectronics-based technologies.
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Affiliation(s)
- Muhammad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Sikandar Aftab
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea
| | - Syed Hassan Abbas Jaffery
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Asif Ali
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Dinh Nguyen Cong
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Raheel Akhtar
- Department of Electrical Engineering University of Lahore, Islamabad, Pakistan
| | - Yongho Seo
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea
| | - Jonghwa Eom
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea
| | - Praveen Gautam
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea
| | - Hwayong Noh
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea
| | - Jongwan Jung
- Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea.
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21
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Pu S, Fu J, Liao Y, Ge L, Zhou Y, Zhang S, Zhao S, Liu X, Hu X, Liu K, Chen J. Promoting Energy Efficiency via a Self-Adaptive Evaporative Cooling Hydrogel. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1907307. [PMID: 32048339 DOI: 10.1002/adma.201907307] [Citation(s) in RCA: 55] [Impact Index Per Article: 13.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2019] [Revised: 01/15/2020] [Indexed: 05/21/2023]
Abstract
High temperature brings adverse impacts on the energy efficiency, and even destroys a semiconductor device. Here, a novel and cost-effective strategy is proposed to boost the energy efficiency of semiconductor devices by using the self-adaptive evaporative cooling of a lithium- and bromine-enriched polyacrylamide hydrogel. Water inside the hydrogel can quickly evaporate to dissipate the waste heat generated by the nugatory carrier transport in the P-N junction. In dormancy, the hydrogel harvests water molecules from the surrounding air to regenerate itself. The hydrogel is demonstrated to low down the operating temperature of a commercial polycrystalline silicon solar cell by 17 °C under one sun condition and enhances its efficiency from 14.5% to 15.5%. It is also capable of increasing the maximum power of a simulated chip by 45% at a fixed operating temperature. The hydrogel is expected to be widely adopted in current semiconductor industry to improve its energy efficiency.
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Affiliation(s)
- Shirui Pu
- MOE Key Laboratory of Hydrodynamic Transients, School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, Hubei, China
| | - Jia Fu
- MOE Key Laboratory of Hydrodynamic Transients, School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, Hubei, China
| | - Yutian Liao
- MOE Key Laboratory of Hydrodynamic Transients, School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, Hubei, China
| | - Lurong Ge
- MOE Key Laboratory of Hydrodynamic Transients, School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, Hubei, China
| | - Yihao Zhou
- Department of Bioengineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Songlin Zhang
- Department of Bioengineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Shenlong Zhao
- Department of Bioengineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Xiaowei Liu
- MOE Key Laboratory of Hydrodynamic Transients, School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, Hubei, China
| | - Xuejiao Hu
- MOE Key Laboratory of Hydrodynamic Transients, School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, Hubei, China
| | - Kang Liu
- MOE Key Laboratory of Hydrodynamic Transients, School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, Hubei, China
| | - Jun Chen
- Department of Bioengineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
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22
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Abstract
Two-dimensional van der Waals materials have rich and unique functional properties, but many are susceptible to corrosion under ambient conditions. Here we show that linear alkylamines n-C m H2m+1NH2, with m = 4 through 11, are highly effective in protecting the optoelectronic properties of these materials, such as black phosphorus (BP) and transition-metal dichalcogenides (TMDs: WS2, 1T'-MoTe2, WTe2, WSe2, TaS2, and NbSe2). As a representative example, n-hexylamine (m = 6) can be applied in the form of thin molecular monolayers on BP flakes with less than 2-nm thickness and can prolong BP's lifetime from a few hours to several weeks and even months in ambient environments. Characterizations combined with our theoretical analysis show that the thin monolayers selectively sift out water molecules, forming a drying layer to achieve the passivation of the protected 2D materials. The monolayer coating is also stable in air, H2 annealing, and organic solvents, but can be removed by certain organic acids.
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23
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Gluschke JG, Richter F, Micolich AP. A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applications. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2019; 90:083901. [PMID: 31472654 DOI: 10.1063/1.5099293] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2019] [Accepted: 07/10/2019] [Indexed: 06/10/2023]
Abstract
We report on a parylene chemical vapor deposition system custom designed for producing ultrathin parylene films (5-100 nm thickness) for use as an electrical insulator in nanoscale electronic devices, including as the gate insulator in transistors. The system features a small deposition chamber that can be isolated and purged for process termination, a quartz crystal microbalance for monitoring deposition, and a rotating angled stage to increase coating conformity. The system was mostly built from off-the-shelf vacuum fittings allowing for easy modification and reduced cost compared to commercial parylene coating systems. The production of ultrathin parylene films for device applications is a niche not well catered to by commercial coating systems, which are typically designed to give thicker coatings (microns) with high uniformity over much larger areas. An added advantage of our design for nanoscale device applications is that the small deposition chamber is readily removable for transfer to a glovebox to enable parylene deposition onto pristine surfaces prepared in oxygen/water-free environments with minimal contamination.
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Affiliation(s)
- J G Gluschke
- School of Physics, University of New South Wales, Sydney, NSW 2052, Australia
| | - F Richter
- School of Physics, University of New South Wales, Sydney, NSW 2052, Australia
| | - A P Micolich
- School of Physics, University of New South Wales, Sydney, NSW 2052, Australia
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24
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Chiu MH, Tang HL, Tseng CC, Han Y, Aljarb A, Huang JK, Wan Y, Fu JH, Zhang X, Chang WH, Muller DA, Takenobu T, Tung V, Li LJ. Metal-Guided Selective Growth of 2D Materials: Demonstration of a Bottom-Up CMOS Inverter. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1900861. [PMID: 30907033 DOI: 10.1002/adma.201900861] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2019] [Revised: 02/28/2019] [Indexed: 06/09/2023]
Abstract
2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large-area electronics and circuits strongly relies on wafer-scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal-guided selective growth (MGSG), is reported. The success of control over the transition-metal-precursor vapor pressure, the first concurrent growth of two dissimilar monolayer TMDs, is demonstrated in conjunction with lateral or vertical TMD heterojunctions at precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) process. Owing to the location selectivity, MGSG allows the growth of p- and n-type TMDs with spatial homogeneity and uniform electrical performance for circuit applications. As a demonstration, the first bottom-up complementary metal-oxide-semiconductor inverter based on p-type WSe2 and n-type MoSe2 is achieved, which exhibits a high and reproducible voltage gain of 23 with little dependence on position.
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Affiliation(s)
- Ming-Hui Chiu
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Hao-Ling Tang
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chien-Chih Tseng
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 300, Taiwan
| | - Yimo Han
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
| | - Areej Aljarb
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Jing-Kai Huang
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yi Wan
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Jui-Han Fu
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Wen-Hao Chang
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 300, Taiwan
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, 14850, USA
| | - Taishi Takenobu
- Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan
| | - Vincent Tung
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Lain-Jong Li
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
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25
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Zhao Y, Bertolazzi S, Samorì P. A Universal Approach toward Light-Responsive Two-Dimensional Electronics: Chemically Tailored Hybrid van der Waals Heterostructures. ACS NANO 2019; 13:4814-4825. [PMID: 30917275 DOI: 10.1021/acsnano.9b01716] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Stimuli-responsive hybrid van der Waals heterostructures (vdWHs), composed of organic molecular switches superimposed on inorganic 2D materials (2DMs), can combine the outstanding physical properties of the latter components with the virtually infinite variety of tunable functionality of molecules, thereby offering an efficient protocol for the development of high-performance multifunctional materials and devices. The use of light as a remote control to modulate the properties of semiconducting 2DMs when interfaced with photochromic molecules suffers from both the limitation associated with the persistent photoconductivity characterizing the 2DMs and the finite thermal stability of the photochromic molecule in its different states. Here, we have devised a universal approach toward the fabrication of optically switchable electronic devices comprising a few nanometers thick azobenzene (AZO) layer physisorbed on 2D semiconductors supported on a trap-free polymer dielectric. The joint effect of the improved 2D/dielectric interface, the molecule's light-modulated dipolar doping, and the high thermal stability of cis-AZO offers the highest control over the reversible and efficient charge carrier tuning in 2D semiconductors with a preserved high performance in 2D field-effect transistors, as quantified in terms of carrier mobility and Ion/ Ioff ratio. The device has the potential to operate as an optical memory with four current levels and long retention time (>15 h). Furthermore, by using a CMOS-compatible micropatterning process, the photoswitchable resistor-diode transition has been achieved on hybrid lateral heterojunction devices. Our approach is of general applicability toward the generation of high-performance hybrid vdWHs for the emergence of functional and responsive devices.
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Affiliation(s)
- Yuda Zhao
- University of Strasbourg , CNRS, ISIS UMR 7006, 8 allée Gaspard Monge , F-67000 Strasbourg , France
| | - Simone Bertolazzi
- University of Strasbourg , CNRS, ISIS UMR 7006, 8 allée Gaspard Monge , F-67000 Strasbourg , France
| | - Paolo Samorì
- University of Strasbourg , CNRS, ISIS UMR 7006, 8 allée Gaspard Monge , F-67000 Strasbourg , France
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26
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Roh J, Ryu JH, Baek GW, Jung H, Seo SG, An K, Jeong BG, Lee DC, Hong BH, Bae WK, Lee JH, Lee C, Jin SH. Threshold Voltage Control of Multilayered MoS 2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1803852. [PMID: 30637933 DOI: 10.1002/smll.201803852] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2018] [Revised: 11/23/2018] [Indexed: 06/09/2023]
Abstract
In recent past, for next-generation device opportunities such as sub-10 nm channel field-effect transistors (FETs), tunneling FETs, and high-end display backplanes, tremendous research on multilayered molybdenum disulfide (MoS2 ) among transition metal dichalcogenides has been actively performed. However, nonavailability on a matured threshold voltage control scheme, like a substitutional doping in Si technology, has been plagued for the prosperity of 2D materials in electronics. Herein, an adjustment scheme for threshold voltage of MoS2 FETs by using self-assembled monolayer treatment via octadecyltrichlorosilane is proposed and demonstrated to show MoS2 FETs in an enhancement mode with preservation of electrical parameters such as field-effect mobility, subthreshold swing, and current on-off ratio. Furthermore, the mechanisms for threshold voltage adjustment are systematically studied by using atomic force microscopy, Raman, temperature-dependent electrical characterization, etc. For validation of effects of threshold voltage engineering on MoS2 FETs, full swing inverters, comprising enhancement mode drivers and depletion mode loads are perfectly demonstrated with a maximum gain of 18.2 and a noise margin of ≈45% of 1/2 VDD . More impressively, quantum dot light-emitting diodes, driven by enhancement mode MoS2 FETs, stably demonstrate 120 cd m-2 at the gate-to-source voltage of 5 V, exhibiting promising opportunities for future display application.
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Affiliation(s)
- Jeongkyun Roh
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Jae Hyeon Ryu
- Department of Electronic Engineering, Incheon National University, Academy-ro, Yeongsu-gu, Incheon, 22012, Republic of Korea
| | - Geun Woo Baek
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Heeyoung Jung
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Seung Gi Seo
- Department of Electronic Engineering, Incheon National University, Academy-ro, Yeongsu-gu, Incheon, 22012, Republic of Korea
| | - Kunsik An
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Byeong Guk Jeong
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Byung Hee Hong
- Department of Chemistry, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Wan Ki Bae
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Seobu-ro, Jangan-gu, Suwon-si, 16419, Gyeonggi-do, Republic of Korea
| | - Jong-Ho Lee
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Changhee Lee
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
- Department of Electronic Engineering, Incheon National University, Academy-ro, Yeongsu-gu, Incheon, 22012, Republic of Korea
| | - Sung Hun Jin
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
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27
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Aftab S, Iqbal MW, Afzal AM, Khan MF, Hussain G, Waheed HS, Kamran MA. Formation of an MoTe2 based Schottky junction employing ultra-low and high resistive metal contacts. RSC Adv 2019; 9:10017-10023. [PMID: 35520896 PMCID: PMC9062468 DOI: 10.1039/c8ra09656b] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2018] [Accepted: 03/18/2019] [Indexed: 12/03/2022] Open
Abstract
Schottky-barrier diodes have great importance in power management and mobile communication because of their informal device technology, fast response and small capacitance. In this research, a p-type molybdenum ditelluride (p-MoTe2) based Schottky barrier diode was fabricated using asymmetric metal contacts. The MoTe2 nano-flakes were mechanically exfoliated using adhesive tape and with the help of dry transfer techniques, the flakes were transferred onto silicon/silicon dioxide (Si/SiO2) substrates to form the device. The Schottky-barrier was formed as a result of using ultra-low palladium/gold (Pd/Au) and high resistive chromium/gold (Cr/Au) metal electrodes. The Schottky diode exhibited a clear rectifying behavior with an on/off ratio of ∼103 and an ideality factor of ∼1.4 at zero gate voltage. In order to check the photovoltaic response, a green laser light was illuminated, which resulted in a responsivity of ∼3.8 × 103 A W−1. These values are higher than the previously reported results that were obtained using conventional semiconducting materials. Furthermore, the barrier heights for Pd and Cr with a MoTe2 junction were calculated to be 90 meV and 300 meV, respectively. In addition, the device was used for rectification purposes revealing a stable rectifying behavior. Schottky-barrier diodes have great importance in power management and mobile communication because of their informal device technology, fast response and small capacitance.![]()
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Affiliation(s)
- Sikandar Aftab
- Department of Physics and the Astronomy and Graphene Research Institute
- Sejong University
- Seoul 05006
- Korea
| | - Muhammad Waqas Iqbal
- Department of Physics
- Riphah Institute of Computing and Applied Sciences (RICAS)
- Riphah International University
- Lahore
- Pakistan
| | - Amir Muhammad Afzal
- Department of Physics and the Astronomy and Graphene Research Institute
- Sejong University
- Seoul 05006
- Korea
| | - M. Farooq Khan
- Department of Physics and the Astronomy and Graphene Research Institute
- Sejong University
- Seoul 05006
- Korea
| | - Ghulam Hussain
- Department of Physics
- Riphah Institute of Computing and Applied Sciences (RICAS)
- Riphah International University
- Lahore
- Pakistan
| | - Hafiza Sumaira Waheed
- Department of Physics
- Riphah Institute of Computing and Applied Sciences (RICAS)
- Riphah International University
- Lahore
- Pakistan
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28
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Bertolazzi S, Gobbi M, Zhao Y, Backes C, Samorì P. Molecular chemistry approaches for tuning the properties of two-dimensional transition metal dichalcogenides. Chem Soc Rev 2018; 47:6845-6888. [PMID: 30043037 DOI: 10.1039/c8cs00169c] [Citation(s) in RCA: 131] [Impact Index Per Article: 21.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Two-dimensional (2D) semiconductors, such as ultrathin layers of transition metal dichalcogenides (TMDs), offer a unique combination of electronic, optical and mechanical properties, and hold potential to enable a host of new device applications spanning from flexible/wearable (opto)electronics to energy-harvesting and sensing technologies. A critical requirement for developing practical and reliable electronic devices based on semiconducting TMDs consists in achieving a full control over their charge-carrier polarity and doping. Inconveniently, such a challenging task cannot be accomplished by means of well-established doping techniques (e.g. ion implantation and diffusion), which unavoidably damage the 2D crystals resulting in degraded device performances. Nowadays, a number of alternatives are being investigated, including various (supra)molecular chemistry approaches relying on the combination of 2D semiconductors with electroactive donor/acceptor molecules. As yet, a large variety of molecular systems have been utilized for functionalizing 2D TMDs via both covalent and non-covalent interactions. Such research endeavours enabled not only the tuning of the charge-carrier doping but also the engineering of the optical, electronic, magnetic, thermal and sensing properties of semiconducting TMDs for specific device applications. Here, we will review the most enlightening recent advancements in experimental (supra)molecular chemistry methods for tailoring the properties of atomically-thin TMDs - in the form of substrate-supported or solution-dispersed nanosheets - and we will discuss the opportunities and the challenges towards the realization of novel hybrid materials and devices based on 2D semiconductors and molecular systems.
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Affiliation(s)
- Simone Bertolazzi
- Université de Strasbourg, CNRS, ISIS, 8 alleé Gaspard Monge, 67000 Strasbourg, France.
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29
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Poh SM, Zhao X, Tan SJR, Fu D, Fei W, Chu L, Jiadong D, Zhou W, Pennycook SJ, Castro Neto AH, Loh KP. Molecular Beam Epitaxy of Highly Crystalline MoSe 2 on Hexagonal Boron Nitride. ACS NANO 2018; 12:7562-7570. [PMID: 29985581 DOI: 10.1021/acsnano.8b04037] [Citation(s) in RCA: 27] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Molybdenum diselenide (MoSe2) is a promising two-dimensional material for next-generation electronics and optoelectronics. However, its application has been hindered by a lack of large-scale synthesis. Although chemical vapor deposition (CVD) using laboratory furnaces has been applied to grow two-dimensional (2D) MoSe2 cystals, no continuous film over macroscopically large area has been produced due to the lack of uniform control in these systems. Here, we investigate the molecular beam epitaxy (MBE) of 2D MoSe2 on hexagonal boron nitride (hBN) substrate, where highly crystalline MoSe2 film can be grown with electron mobility ∼15 cm2/(V s). Scanning transmission electron microscopy (STEM) shows that MoSe2 grains grown at an optimum temperature of 500 °C are highly oriented and coalesced to form continuous film with predominantly mirror twin boundaries. Our work suggests that van der Waals epitaxy of 2D materials is tolerant of lattice mismatch but is facilitated by substrates with similar symmetry.
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Affiliation(s)
- Sock Mui Poh
- NUS Graduate School for Integrative Sciences and Engineering, Centre for Life Sciences #05-01 , 28 Medical Drive , 117456 , Singapore
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 , Singapore
| | - Xiaoxu Zhao
- NUS Graduate School for Integrative Sciences and Engineering, Centre for Life Sciences #05-01 , 28 Medical Drive , 117456 , Singapore
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 , Singapore
| | - Sherman Jun Rong Tan
- NUS Graduate School for Integrative Sciences and Engineering, Centre for Life Sciences #05-01 , 28 Medical Drive , 117456 , Singapore
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 , Singapore
| | - Deyi Fu
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 , Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 117546 , Singapore
| | - Wenwen Fei
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nanomaterials and Devices of the MOE, Institute of Nanoscience , Nanjing University of Aeronautics and Astronautics , Nanjing 210016 , China
| | - Leiqiang Chu
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 , Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 117546 , Singapore
| | - Dan Jiadong
- NUS Graduate School for Integrative Sciences and Engineering, Centre for Life Sciences #05-01 , 28 Medical Drive , 117456 , Singapore
- Department of Materials Science and Engineering , National University of Singapore , 117575 , Singapore
| | - Wu Zhou
- School of Physical Sciences and CAS Centre for Excellence in Topological Quantum Computation , University of Chinese Academy of Sciences , Beijing , 100049 , China
| | - Stephen J Pennycook
- NUS Graduate School for Integrative Sciences and Engineering, Centre for Life Sciences #05-01 , 28 Medical Drive , 117456 , Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 117546 , Singapore
- Department of Materials Science and Engineering , National University of Singapore , 117575 , Singapore
| | - Antonio H Castro Neto
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 117546 , Singapore
- Department of Physics , National University of Singapore , 3 Science Drive 2 , 117542 , Singapore
| | - Kian Ping Loh
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 , Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 117546 , Singapore
- SinBeRISE CREATE and C4T CREATE, National Research Foundation, CREATE Tower, 1 Create Way , 138602 , Singapore
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30
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High-Responsivity Multilayer MoSe 2 Phototransistors with Fast Response Time. Sci Rep 2018; 8:11545. [PMID: 30069033 PMCID: PMC6070481 DOI: 10.1038/s41598-018-29942-1] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2018] [Accepted: 07/18/2018] [Indexed: 11/08/2022] Open
Abstract
There is a great interest in phototransistors based on transition metal dichalcogenides because of their interesting optoelectronic properties. However, most emphasis has been put on MoS2 and little attention has been given to MoSe2, which has higher optical absorbance. Here, we present a compelling case for multilayer MoSe2 phototransistors fabricated in a bottom-gate thin-film transistor configuration on SiO2/Si substrates. Under 650-nm-laser, our MoSe2 phototransistor exhibited the best performance among MoSe2 phototransistors in literature, including the highest responsivity (1.4 × 105 AW-1), the highest specific detectivity (5.5 × 1013 jones), and the fastest response time (1.7 ms). We also present a qualitative model to describe the device operation based on the combination of photoconductive and photogating effects. These results demonstrate the feasibility of achieving high performance in multilayer MoSe2 phototransistors, suggesting the possibility of further enhancement in the performance of MoSe2 phototransistors with proper device engineering.
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31
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Gluschke JG, Seidl J, Lyttleton RW, Carrad DJ, Cochrane JW, Lehmann S, Samuelson L, Micolich AP. Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors. NANO LETTERS 2018; 18:4431-4439. [PMID: 29923725 DOI: 10.1021/acs.nanolett.8b01519] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report the development of nanowire field-effect transistors featuring an ultrathin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III-V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally coated nanowires, which we used to produce functional Ω-gate and gate-all-around structures. These give subthreshold swings as low as 140 mV/dec and on/off ratios exceeding 103 at room temperature. For the gate-all-around structure, we developed a novel fabrication strategy that overcomes some of the limitations with previous lateral wrap-gate nanowire transistors. Finally, we show that parylene can be deposited over chemically treated nanowire surfaces, a feature generally not possible with oxides produced by atomic layer deposition due to the surface "self-cleaning" effect. Our results highlight the potential for parylene as an alternative ultrathin insulator in nanoscale electronic devices more broadly, with potential applications extending into nanobioelectronics due to parylene's well-established biocompatible properties.
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Affiliation(s)
- J G Gluschke
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
| | - J Seidl
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
| | - R W Lyttleton
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
| | - D J Carrad
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen , Copenhagen DK-2100 , Denmark
| | - J W Cochrane
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
| | - S Lehmann
- Solid State Physics/NanoLund , Lund University , SE-221 00 Lund , Sweden
| | - L Samuelson
- Solid State Physics/NanoLund , Lund University , SE-221 00 Lund , Sweden
| | - A P Micolich
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
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Rosenberger MR, Chuang HJ, McCreary KM, Hanbicki AT, Sivaram SV, Jonker BT. Nano-"Squeegee" for the Creation of Clean 2D Material Interfaces. ACS APPLIED MATERIALS & INTERFACES 2018; 10:10379-10387. [PMID: 29510025 DOI: 10.1021/acsami.8b01224] [Citation(s) in RCA: 71] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Two-dimensional (2D) materials exhibit many exciting phenomena that make them promising as materials for future electronic, optoelectronic, and mechanical devices. Because of their atomic thinness, interfaces play a dominant role in determining material behavior. In order to observe and exploit the unique properties of these materials, it is therefore vital to obtain clean and repeatable interfaces. However, the conventional mechanical stacking of atomically thin layers typically leads to trapped contaminants and spatially inhomogeneous interfaces, which obscure the true intrinsic behavior. This work presents a simple and generic approach to create clean 2D material interfaces in mechanically stacked structures. The operating principle is to use an AFM tip to controllably squeeze contaminants out from between 2D layers and their substrates, similar to a "squeegee". This approach leads to drastically improved homogeneity and consistency of 2D material interfaces, as demonstrated by AFM topography and significant reduction of photoluminescence line widths. Also, this approach enables emission from interlayer excitons, demonstrating that the technique enhances interlayer coupling in van der Waals heterostructures. The technique enables repeatable observation of intrinsic 2D material properties, which is crucial for the continued development of these promising materials.
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Affiliation(s)
| | - Hsun-Jen Chuang
- Naval Research Laboratory, Washington , D.C. 20375 , United States
| | | | | | - Saujan V Sivaram
- Naval Research Laboratory, Washington , D.C. 20375 , United States
| | - Berend T Jonker
- Naval Research Laboratory, Washington , D.C. 20375 , United States
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Samadi M, Sarikhani N, Zirak M, Zhang H, Zhang HL, Moshfegh AZ. Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives. NANOSCALE HORIZONS 2018; 3:90-204. [PMID: 32254071 DOI: 10.1039/c7nh00137a] [Citation(s) in RCA: 116] [Impact Index Per Article: 19.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS2, MoSe2, MoTe2, WS2 and WSe2, constitute an important class of materials with a layered crystal structure. Various types of G6-TMD nanomaterials, such as nanosheets, nanotubes and quantum dot nano-objects and flower-like nanostructures, have been synthesized. High thermodynamic stability under ambient conditions, even in atomically thin form, made nanosheets of these inorganic semiconductors a valuable asset in the existing library of two-dimensional (2D) materials, along with the well-known semimetallic graphene and insulating hexagonal boron nitride. G6-TMDs generally possess an appropriate bandgap (1-2 eV) which is tunable by size and dimensionality and changes from indirect to direct in monolayer nanosheets, intriguing for (opto)electronic, sensing, and solar energy harvesting applications. Moreover, rich intercalation chemistry and abundance of catalytically active edge sites make them promising for fabrication of novel energy storage devices and advanced catalysts. In this review, we provide an overview on all aspects of the basic science, physicochemical properties and characterization techniques as well as all existing production methods and applications of G6-TMD nanomaterials in a comprehensive yet concise treatment. Particular emphasis is placed on establishing a linkage between the features of production methods and the specific needs of rapidly growing applications of G6-TMDs to develop a production-application selection guide. Based on this selection guide, a framework is suggested for future research on how to bridge existing knowledge gaps and improve current production methods towards technological application of G6-TMD nanomaterials.
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Affiliation(s)
- Morasae Samadi
- Department of Physics, Sharif University of Technology, Tehran 11155-9161, Iran.
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Wu JY, Chun YT, Li S, Zhang T, Wang J, Shrestha PK, Chu D. Broadband MoS 2 Field-Effect Phototransistors: Ultrasensitive Visible-Light Photoresponse and Negative Infrared Photoresponse. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:1705880. [PMID: 29315924 DOI: 10.1002/adma.201705880] [Citation(s) in RCA: 76] [Impact Index Per Article: 12.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2017] [Indexed: 05/25/2023]
Abstract
Inverse photoresponse is discovered from phototransistors based on molybdenum disulfide (MoS2 ). The devices are capable of detecting photons with energy below the bandgap of MoS2 . Under the illumination of near-infrared (NIR) light at 980 and 1550 nm, negative photoresponses with short response time (50 ms) are observed for the first time. Upon visible-light illumination, the phototransistors exhibit positive photoresponse with ultrahigh responsivity on the order of 104 -105 A W-1 owing to the photogating effect and charge trapping mechanism. Besides, the phototransistors can detect a weak visible-light signal with effective optical power as low as 17 picowatts (pW). A thermally induced photoresponse mechanism, the bolometric effect, is proposed as the cause of the negative photocurrent in the NIR regime. The thermal energy of the NIR radiation is transferred to the MoS2 crystal lattice, inducing lattice heating and resistance increase. This model is experimentally confirmed by low-temperature electrical measurements. The bolometric coefficient calculated from the measured transport current change with temperature is -33 nA K-1 . These findings offer a new approach to develop sub-bandgap photodetectors and other novel optoelectronic devices based on 2D layered materials.
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Affiliation(s)
- Jing-Yuan Wu
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, P. R. China
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK
- Suzhou Key Laboratory of Metal Nano-Optoelectronic Technology, Suzhou Research Institute of Southeast University, Suzhou, 215123, P. R. China
- Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology, Ministry of Education, School of Instrument Science and Engineering, Southeast University, Nanjing, 210096, P. R. China
| | - Young Tea Chun
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Shunpu Li
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Tong Zhang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, P. R. China
- Suzhou Key Laboratory of Metal Nano-Optoelectronic Technology, Suzhou Research Institute of Southeast University, Suzhou, 215123, P. R. China
- Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology, Ministry of Education, School of Instrument Science and Engineering, Southeast University, Nanjing, 210096, P. R. China
| | - Junzhan Wang
- Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Pawan Kumar Shrestha
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Daping Chu
- Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK
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Chen X, Liu G, Hu Y, Cao W, Hu P, Hu W. Vertical MoSe 2-MoO x p-n heterojunction and its application in optoelectronics. NANOTECHNOLOGY 2018; 29:045202. [PMID: 29176065 DOI: 10.1088/1361-6528/aa9d4f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The hybrid n-type 2D transition-metal dichalcogenide (TMD)/p-type oxide van der Waals (vdW) heterojunction nanosheets consist of 2D layered MoSe2 (the n-type 2D material) and MoO x (the p-type oxide) which are grown on SiO2/Si substrates for the first time via chemical vapor deposition technique, displaying the regular hexagon structures with the average length dimension of sides of ∼8 μm. Vertical MoSe2-MoO x p-n heterojunctions demonstrate obviously current-rectifying characteristic, and it can be tuned via gate voltage. What is more, the photodetector based on vertical MoSe2-MoO x heterojunctions displays optimal photoresponse behavior, generating the responsivity, detectivity, and external quantum efficiency to 3.4 A W-1, 0.85 × 108 Jones, and 1665.6%, respectively, at V ds = 5 V with the light wavelength of 254 nm under 0.29 mW cm-2. These results furnish a building block on investigating the flexible and transparent properties of vdW and further optimizing the structure of the devices for better optoelectronic and electronic performance.
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Affiliation(s)
- Xiaoshuang Chen
- Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, People's Republic of China. Department of Physics, Harbin Institute of Technology, Harbin 150080, People's Republic of China
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Kobashi K, Hayakawa R, Chikyow T, Wakayama Y. Interface Engineering for Controlling Device Properties of Organic Antiambipolar Transistors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:2762-2767. [PMID: 29277988 DOI: 10.1021/acsami.7b14652] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The main purpose of this study is to establish a guideline for controlling the device properties of organic antiambipolar transistors. Our key strategy is to use interface engineering to promote carrier injection at channel/electrode interfaces and carrier accumulation at a channel/dielectric interface. The effective use of carrier injection interlayers and an insulator layer with a high dielectric constant (high-k) enabled the fine tuning of device parameters and, in particular, the onset (Von) and offset (Voff) voltages. A well-matched combination of the interlayers and a high-k dielectric layer achieved a low peak voltage (0.25 V) and a narrow on-state bias range (2.2 V), indicating that organic antiambipolar transistors have high potential as negative differential resistance devices for multivalued logic circuits.
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Affiliation(s)
- Kazuyoshi Kobashi
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS) , 1-1 Namiki, Tsukuba 305-0044, Japan
- Department of Chemistry and Biochemistry, Faculty of Engineering, Kyushu University , 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Ryoma Hayakawa
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS) , 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Toyohiro Chikyow
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS) , 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Yutaka Wakayama
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS) , 1-1 Namiki, Tsukuba 305-0044, Japan
- Department of Chemistry and Biochemistry, Faculty of Engineering, Kyushu University , 1-1 Namiki, Tsukuba 305-0044, Japan
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37
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Sial MN, Usman M, Zheng B, Yu Y, Mavrič A, Qing F, Valant M, Wang ZM. CVD growth of molybdenum diselenide surface structures with tailored morphology. CrystEngComm 2018. [DOI: 10.1039/c8ce00917a] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Controllable atmospheric pressure CVD has been optimized to grow transition metal dichalcogenide MoSe2 with tunable morphology at 750 °C on a silicon substrate with a native oxide layer of 250 nm.
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Affiliation(s)
- M. Naeem Sial
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China
- Chengdu 610054
- P. R. China
| | - Muhammad Usman
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China
- Chengdu 610054
- P. R. China
| | - Binjie Zheng
- State Key Laboratory of Electronic Thin Films and Integrated Devices
- University of Electronic Science and Technology of China
- Chengdu 610054
- China
| | - Yanan Yu
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China
- Chengdu 610054
- P. R. China
| | - Andraž Mavrič
- University of Nova Gorica
- Materials Research Laboratory
- SI-5000 Nova Gorica
- Slovenia
| | - Fangzhu Qing
- State Key Laboratory of Electronic Thin Films and Integrated Devices
- University of Electronic Science and Technology of China
- Chengdu 610054
- China
| | - Matjaz Valant
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China
- Chengdu 610054
- P. R. China
- University of Nova Gorica
- Materials Research Laboratory
| | - Zhiming M. Wang
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China
- Chengdu 610054
- P. R. China
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38
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Hu Z, Wu Z, Han C, He J, Ni Z, Chen W. Two-dimensional transition metal dichalcogenides: interface and defect engineering. Chem Soc Rev 2018; 47:3100-3128. [DOI: 10.1039/c8cs00024g] [Citation(s) in RCA: 429] [Impact Index Per Article: 71.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
This review summarizes the recent advances in understanding the effects of interface and defect engineering on the electronic and optical properties of TMDCs, as well as their applications in advanced (opto)electronic devices.
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Affiliation(s)
- Zehua Hu
- Department of Chemistry
- National University of Singapore
- Singapore 117543
- Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre
| | - Zhangting Wu
- School of Physics
- Southeast University
- Nanjing 211189
- China
| | - Cheng Han
- Department of Chemistry
- National University of Singapore
- Singapore 117543
- Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre
| | - Jun He
- School of Physics and Electronics
- Central South University
- Changsha
- China
| | - Zhenhua Ni
- School of Physics
- Southeast University
- Nanjing 211189
- China
| | - Wei Chen
- Department of Chemistry
- National University of Singapore
- Singapore 117543
- Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre
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Shi B, Wang Y, Li J, Zhang X, Yan J, Liu S, Yang J, Pan Y, Zhang H, Yang J, Pan F, Lu J. n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors. Phys Chem Chem Phys 2018; 20:24641-24651. [DOI: 10.1039/c8cp04615h] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We explore the contact properties of monolayer InSe transistors and obtain n-type Ohmic/p-type Schottky contacts.
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40
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Schulman DS, Sebastian A, Buzzell D, Huang YT, Arnold AJ, Das S. Facile Electrochemical Synthesis of 2D Monolayers for High-Performance Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2017; 9:44617-44624. [PMID: 29210272 DOI: 10.1021/acsami.7b14711] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
In this paper, we report high-performance monolayer thin-film transistors (TFTs) based on a variety of two-dimensional layered semiconductors such as MoS2, WS2, and MoSe2 which were obtained from their corresponding bulk counterparts via an anomalous but high-yield and low-cost electrochemical corrosion process, also referred to as electro-ablation (EA), at room temperature. These monolayer TFTs demonstrated current ON-OFF ratios in excess of 107 along with ON currents of 120 μA/μm for MoS2, 40 μA/μm for WS2, and 40 μA/μm for MoSe2 which clearly outperform the existing TFT technologies. We found that these monolayers have larger Schottky barriers for electron injection compared to their multilayer counterparts, which is partially compensated by their superior electrostatics and ultra-thin tunnel barriers. We observed an Anderson type semiconductor-to-metal transition in these monolayers and also discussed possible scattering mechanisms that manifest in the temperature dependence of the electron mobility. Finally, our study suggests superior chemical stability and electronic integrity of monolayers even after being exposed to extreme electro-oxidation and corrosion processes which is promising for the implementation of such TFTs in harsh environment sensing. Overall, the EA process proves to be a facile synthesis route offering higher monolayer yields than mechanical exfoliation and lower cost and complexity than chemical vapor deposition methods.
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Affiliation(s)
| | | | | | - Yu-Ting Huang
- Department of Mechanical Engineering, University of Hong Kong , Pokfulam, Hong Kong
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Xie L, Liao M, Wang S, Yu H, Du L, Tang J, Zhao J, Zhang J, Chen P, Lu X, Wang G, Xie G, Yang R, Shi D, Zhang G. Graphene-Contacted Ultrashort Channel Monolayer MoS 2 Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29. [PMID: 28752671 DOI: 10.1002/adma.201702522] [Citation(s) in RCA: 92] [Impact Index Per Article: 13.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2017] [Revised: 06/25/2017] [Indexed: 05/07/2023]
Abstract
2D semiconductors are promising channel materials for field-effect transistors (FETs) with potentially strong immunity to short-channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS2 . FETs with channel lengths scaling down to ≈4 nm can be realized reliably. These graphene-contacted ultrashort channel MoS2 FETs exhibit superior performances including the nearly Ohmic contacts and excellent immunity to SCEs. This work provides a facile route toward the fabrication of various 2D material-based devices for ultrascaled electronics.
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Affiliation(s)
- Li Xie
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Mengzhou Liao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Shuopei Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Hua Yu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jian Tang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Jing Zhao
- Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, China
| | - Jing Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Peng Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Xiaobo Lu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Guole Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Guibai Xie
- National Key Laboratory of Science and Technology on Space Microwave, China Academy of Space Technology (Xi'an), Xi'an, 710100, China
| | - Rong Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing, 100190, China
- Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing, 100190, China
- Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing, 100190, China
- Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China
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42
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Recent Advances in Electronic and Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides. ELECTRONICS 2017. [DOI: 10.3390/electronics6020043] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDCs) offer several attractive features for use in next-generation electronic and optoelectronic devices. Device applications of TMDCs have gained much research interest, and significant advancement has been recorded. In this review, the overall research advancement in electronic and optoelectronic devices based on TMDCs are summarized and discussed. In particular, we focus on evaluating field effect transistors (FETs), photovoltaic cells, light-emitting diodes (LEDs), photodetectors, lasers, and integrated circuits (ICs) using TMDCs.
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43
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Kang K, Godin K, Kim YD, Fu S, Cha W, Hone J, Yang EH. Graphene-Assisted Antioxidation of Tungsten Disulfide Monolayers: Substrate and Electric-Field Effect. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1603898. [PMID: 28234414 DOI: 10.1002/adma.201603898] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2016] [Revised: 01/01/2017] [Indexed: 06/06/2023]
Abstract
Transition metal dichalcogenides (TMDs) have emerged as promising materials to complement graphene for advanced optoelectronics. However, irreversible degradation of chemical vapor deposition-grown monolayer TMDs via oxidation under ambient conditions limits applications of TMD-based devices. Here, the growth of oxidation-resistant tungsten disulfide (WS2 ) monolayers on graphene is demonstrated, and the mechanism of oxidation of WS2 on SiO2 , graphene/SiO2 , and on graphene suspended in air is elucidated. While WS2 on a SiO2 substrate begins oxidation within weeks, epitaxially grown WS2 on suspended graphene does not show any sign of oxidation, attributed to the screening effect of surface electric field caused by the substrate. The control of a local oxidation of WS2 on a SiO2 substrate by a local electric field created using an atomic force microscope tip is also demonstrated.
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Affiliation(s)
- Kyungnam Kang
- Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ, 07030, USA
| | - Kyle Godin
- Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ, 07030, USA
| | - Young Duck Kim
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - Shichen Fu
- Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ, 07030, USA
| | - Wujoon Cha
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - Eui-Hyeok Yang
- Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ, 07030, USA
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Guan J, Chuang HJ, Zhou Z, Tománek D. Optimizing Charge Injection across Transition Metal Dichalcogenide Heterojunctions: Theory and Experiment. ACS NANO 2017; 11:3904-3910. [PMID: 28319662 DOI: 10.1021/acsnano.7b00285] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
In search of an improved strategy to form low-resistance contacts to semiconducting transition metal dichalcogenides, we combine ab initio density functional electronic structure calculations for an NbSe2/WSe2 interface with quantum transport measurements of the corresponding heterojunction between a few-layer WSe2 semiconductor and a metallic NbSe2 layer. Our theoretical results suggest that, besides a rigid band shift associated with charge transfer, the presence of NbSe2 does not modify the electronic structure of WSe2. Since the two transition metal dichalcogenides are structurally similar and display only a small lattice mismatch, their heterojunction can efficiently transfer charge across the interface. These findings are supported by transport measurements for WSe2 field-effect transistors with NbSe2 contacts, which exhibit nearly ohmic behavior and phonon-limited mobility in the hole channel, indicating that the contacts to WSe2 are highly transparent.
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Affiliation(s)
- Jie Guan
- Physics and Astronomy Department, Michigan State University , East Lansing, Michigan 48824, United States
| | - Hsun-Jen Chuang
- Physics and Astronomy Department, Wayne State University , Detroit, Michigan 48201, United States
| | - Zhixian Zhou
- Physics and Astronomy Department, Wayne State University , Detroit, Michigan 48201, United States
| | - David Tománek
- Physics and Astronomy Department, Michigan State University , East Lansing, Michigan 48824, United States
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45
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Zhao Y, Qiao J, Yu Z, Yu P, Xu K, Lau SP, Zhou W, Liu Z, Wang X, Ji W, Chai Y. High-Electron-Mobility and Air-Stable 2D Layered PtSe 2 FETs. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1604230. [PMID: 27886410 DOI: 10.1002/adma.201604230] [Citation(s) in RCA: 224] [Impact Index Per Article: 32.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2016] [Revised: 10/01/2016] [Indexed: 05/23/2023]
Abstract
The electrical and optical measurements, in combination with density functional theory calculations, show distinct layer-dependent semiconductor-to-semimetal evolution of 2D layered PtSe2 . The high room-temperature electron mobility and near-infrared photo-response, together with much better air-stability, make PtSe2 a versatile electronic 2D layered material.
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Affiliation(s)
- Yuda Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, P. R. China
| | - Jingsi Qiao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
- Department of Physics, Renmin University of China, Beijing, 100872, P. R. China
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing, 100872, P. R. China
| | - Zhihao Yu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Peng Yu
- School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore
| | - Kang Xu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, P. R. China
| | - Wu Zhou
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Wei Ji
- Department of Physics, Renmin University of China, Beijing, 100872, P. R. China
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing, 100872, P. R. China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, P. R. China
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46
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Zhao Y, Lee H, Choi W, Fei W, Lee CJ. Large-area synthesis of monolayer MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition. RSC Adv 2017. [DOI: 10.1039/c7ra03642f] [Citation(s) in RCA: 51] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
We report the synthesis of large-area monolayer MoSe2 films extended up to a millimeter scale on SiO2/Si substrates by atmospheric pressure chemical vapor deposition (CVD).
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Affiliation(s)
- Yu Zhao
- Department of Micro/Nano Systems
- Korea University
- Seoul 02841
- Korea
- School of Materials Science and Engineering
| | - Hyunjea Lee
- School of Electrical Engineering
- Korea University
- Seoul 02841
- Korea
| | - Woong Choi
- School of Advanced Materials Engineering
- Kookmin University
- Seoul 02707
- Korea
| | - Weidong Fei
- School of Materials Science and Engineering
- Harbin Institute of Technology
- Harbin 150001
- PR China
| | - Cheol Jin Lee
- Department of Micro/Nano Systems
- Korea University
- Seoul 02841
- Korea
- School of Electrical Engineering
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47
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Singh E, Kim KS, Yeom GY, Nalwa HS. Two-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cells. RSC Adv 2017. [DOI: 10.1039/c7ra03599c] [Citation(s) in RCA: 138] [Impact Index Per Article: 19.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022] Open
Abstract
Dye-sensitized solar cell using counter electrode based on transition metal dichalcogenides.
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Affiliation(s)
- Eric Singh
- Department of Computer Science
- Stanford University
- Stanford
- USA
- School of Advanced Materials Science and Engineering
| | - Ki Seok Kim
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon-si
- South Korea
| | - Geun Young Yeom
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon-si
- South Korea
- SKKU Advanced Institute of Nano Technology
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48
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Wu G, Wang X, Wang P, Huang H, Chen Y, Sun S, Shen H, Lin T, Wang J, Zhang S, Bian L, Sun J, Meng X, Chu J. Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer. NANOTECHNOLOGY 2016; 27:364002. [PMID: 27478899 DOI: 10.1088/0957-4484/27/36/364002] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Photodetectors based on two-dimensional (2D) transition-metal dichalcogenides have been studied extensively in recent years. However, the detective spectral ranges, dark current and response time are still unsatisfactory, even under high gate and source-drain bias. In this work, the photodetectors of In2Se3 have been fabricated on a ferroelectric field effect transistor structure. Based on this structure, high performance photodetectors have been achieved with a broad photoresponse spectrum (visible to 1550 nm) and quick response (200 μs). Most importantly, with the intrinsic huge electric field derived from the polarization of ferroelectric polymer (P(VDF-TrFE)) gating, a low dark current of the photodetector can be achieved without additional gate bias. These studies present a crucial step for further practical applications for 2D semiconductors.
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Affiliation(s)
- Guangjian Wu
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, People's Republic of China
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49
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Lin MW, Kravchenko II, Fowlkes J, Li X, Puretzky AA, Rouleau CM, Geohegan DB, Xiao K. Thickness-dependent charge transport in few-layer MoS₂ field-effect transistors. NANOTECHNOLOGY 2016; 27:165203. [PMID: 26963583 DOI: 10.1088/0957-4484/27/16/165203] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Molybdenum disulfide (MoS2) is currently under intensive study because of its exceptional optical and electrical properties in few-layer form. However, how charge transport mechanisms vary with the number of layers in MoS2 flakes remains unclear. Here, exfoliated flakes of MoS2 with various thicknesses were successfully fabricated into field-effect transistors (FETs) to measure the thickness and temperature dependences of electrical mobility. For these MoS2 FETs, measurements at both 295 K and 77 K revealed the maximum mobility for layer thicknesses between 5 layers (∼3.6 nm) and 10 layers (∼7 nm), with ∼70 cm(2) V(-1) s(-1) measured for 5 layer devices at 295 K. Temperature-dependent mobility measurements revealed that the mobility rises with increasing temperature to a maximum. This maximum occurs at increasing temperature with increasing layer thickness, possibly due to strong Coulomb scattering from charge impurities or weakened electron-phonon interactions for thicker devices. Temperature-dependent conductivity measurements for different gate voltages revealed a metal-to-insulator transition for devices thinner than 10 layers, which may enable new memory and switching applications. This study advances the understanding of fundamental charge transport mechanisms in few-layer MoS2, and indicates the promise of few-layer transition metal dichalcogenides as candidates for potential optoelectronic applications.
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Affiliation(s)
- Ming-Wei Lin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
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50
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Liu F, Zheng S, Chaturvedi A, Zólyomi V, Zhou J, Fu Q, Zhu C, Yu P, Zeng Q, Drummond ND, Fan HJ, Kloc C, Fal'ko VI, He X, Liu Z. Optoelectronic properties of atomically thin ReSSe with weak interlayer coupling. NANOSCALE 2016; 8:5826-5834. [PMID: 26927684 DOI: 10.1039/c5nr08440g] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Rhenium dichalcogenides, such as ReS2 and ReSe2, have attracted a lot of interests due to the weak interlayered coupling in these materials. Studies of rhenium based dichalcogenide alloys will help us understand the differences between binary rhenium dichalcogenides. They will also extend the applications of two-dimensional (2D) materials through alloying. In this work, we studied the optoelectronic properties of ReSSe with a S and Se ratio of 1 : 1. The band gap of the ReSSe alloy is investigated by optical absorption spectra as well as theoretical calculations. The alloy shows weak interlayered coupling, as evidenced by the Raman spectrum. A field-effect transistor based on ReSSe shows typical n-type behavior with a mobility of about 3 cm(2) V(-1) s(-1) and an on/off ratio of 10(5), together with the in-plane anisotropic conductivity. The device also shows good photoresponse properties, with a photoresponsivity of 8 A W(-1). The results demonstrated here will provide new avenues for the study of 2D materials with weak interlayer interactions and in-plane anisotropy.
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Affiliation(s)
- Fucai Liu
- Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
| | - Shoujun Zheng
- Centre for Disruptive Photonic Technologies, School of Physics and Mathematics Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Apoorva Chaturvedi
- Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
| | - Viktor Zólyomi
- National Graphene Institute, University of Manchester, Booth St E, Manchester M13 9PL, UK
| | - Jiadong Zhou
- Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
| | - Qundong Fu
- Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
| | - Chao Zhu
- Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
| | - Peng Yu
- Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
| | - Qingsheng Zeng
- Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
| | - Neil D Drummond
- Physics Department, Lancaster University, Lancaster LA1 4YB, UK
| | - Hong Jin Fan
- Centre for Disruptive Photonic Technologies, School of Physics and Mathematics Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Christian Kloc
- Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
| | - Vladimir I Fal'ko
- National Graphene Institute, University of Manchester, Booth St E, Manchester M13 9PL, UK
| | - Xuexia He
- Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
| | - Zheng Liu
- Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. and NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
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