Transfer printing methods for flexible thin film solar cells: basic concepts and working principles

Conductive PEDOT-Dominant Surface of Transparent Electrode Patch via Selective Phase Transfer for Efficient Flexible Photoelectronic Devices

In this study, a conductive patch for a flexible organic optoelectronic device is proposed and implemented using a poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) polymer electrode based on a transfer process to achieve its high conductivity with an efficient conductive pathway. This PEDOT-dominant surface is induced by phase inversion during the transfer process owing to the solvent affinity of the PSS phase. The PEDOT:PSS patch formed by the transfer process minimizes the power loss in a flexible optoelectronic device due to the improved charge collection and suppressed leakage current responses. In addition, the bending stability of the flexible photoelectronic device is also enhanced by maintaining performance for 1000 bending cycles. Therefore, in the fabrication of a transparent flexible conductive PEDOT:PSS patch, the transfer process of a conducting polymer constitutes an effective strategy that can improve conductivity and embellished morphology.

Multiscale Transfer Printing via Shape Memory Polymer with High Adhesion and Modulus Switchability

Flexible electronics have gained significant attention as an innovative solution to meet the growing need for information collection from the human body and the environment. However, a critical challenge lies in the need for a transfer printing technique that can fabricate rigid and brittle devices on flexible organic substrates. Here, we develop a multiscale transfer printing technique using an ultraviolet-curable shape memory polymer (SMP) that serves as both the stamp and the receiver substrate. The SMP demonstrates exceptional mechanical performance with toughness at room temperature and remarkable flexibility near its glass transition temperature. The SMP material exhibits an impressive shape recovery ratio and remarkable adhesion switchability. We demonstrate robust transfer printing of diverse objects with different materials and morphologies and in situ transfer of multiscale metallic structures. In addition, the in situ fabricated transparent hyperthermia patches with embedded metal grids are demonstrated, offering potential application in the field of sensors, wearable devices, and electronic skin.

Electrohydrodynamic Nanopatterning: A Novel Solvent-Assisted Technique for Unconventional Substrates

Electrohydrodynamic (EHD)-driven patterning is a pioneering lithographic technique capable of replicating and modifying micro/nanostructures efficiently. However, this process is currently restricted to conventional substrates, as it necessitates a uniform and robust electric field over a large area. Consequently, the use of nontraditional substrates, such as those that are flexible, nonflat, or have high insulation, has been notably limited. In our study, we extend the applicability of EHD-driven patterning by introducing a solvent-assisted capillary peel-and-transfer method that allows the successful removal of diverse EHD-induced structures from their original substrates. Compared with the traditional route, our process boasts a success rate close to 100%. The detached structures can then be efficiently transferred to nonconventional substrates, overcoming the limitations of the traditional EHD process. Our method exhibits significant versatility, as evidenced by successful transfer of structures with engineered wettability and patterned structures composed of metals and metal oxides onto nonconventional substrates.

Fabrication of a 100 × 100 mm2 nanometer-thick graphite pellicle for extreme ultraviolet lithography by a peel-off and camphor-supported transfer approach

An extreme ultraviolet (EUV) lithography pellicle is used to physically protect a mask from contaminants during the EUV exposure process and needs to have a high EUV transmittance. The EUV pellicle should be fabricated using a freestanding thin film with several tens of nanometer thickness in an area of 110 × 142 mm², which is a challenging task. Here, we propose a peel-off approach to directly detach the nanometer-thick graphite film (NGF)/Ni film from SiO₂/Si wafer and significantly shorten the etching time of the Ni film. Combined with the residue-damage-free transfer method that used camphor as a supporting layer, we successfully fabricated a large-area (100 × 100 mm²) NGF pellicle with a thickness of ∼20 nm, and an EUV transmittance of ∼87.2%.

Energy Harvesting Materials and Structures for Smart Textile Applications: Recent Progress and Path Forward

A major challenge with current wearable electronics and e-textiles, including sensors, is power supply. As an alternative to batteries, energy can be harvested from various sources using garments or other textile products as a substrate. Four different energy-harvesting mechanisms relevant to smart textiles are described in this review. Photovoltaic energy harvesting technologies relevant to textile applications include the use of high efficiency flexible inorganic films, printable organic films, dye-sensitized solar cells, and photovoltaic fibers and filaments. In terms of piezoelectric systems, this article covers polymers, composites/nanocomposites, and piezoelectric nanogenerators. The latest developments for textile triboelectric energy harvesting comprise films/coatings, fibers/textiles, and triboelectric nanogenerators. Finally, thermoelectric energy harvesting applied to textiles can rely on inorganic and organic thermoelectric modules. The article ends with perspectives on the current challenges and possible strategies for further progress.

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

Hetero-integration of functional semiconductor layers and devices has received strong research interest from both academia and industry. While conventional techniques such as pick-and-place and wafer bonding can partially address this challenge, a variety of new layer transfer and chip-scale transfer technologies have been developed. In this review, we summarize such transfer techniques for heterogeneous integration of ultrathin semiconductor layers or chips to a receiving substrate for many applications, such as microdisplays and flexible electronics. We showed that a wide range of materials, devices, and systems with expanded functionalities and improved performance can be demonstrated by using these technologies. Finally, we give a detailed analysis of the advantages and disadvantages of these techniques, and discuss the future research directions of layer transfer and chip transfer techniques.

High-performance printed electronics based on inorganic semiconducting nano to chip scale structures

The Printed Electronics (PE) is expected to revolutionise the way electronics will be manufactured in the future. Building on the achievements of the traditional printing industry, and the recent advances in flexible electronics and digital technologies, PE may even substitute the conventional silicon-based electronics if the performance of printed devices and circuits can be at par with silicon-based devices. In this regard, the inorganic semiconducting materials-based approaches have opened new avenues as printed nano (e.g. nanowires (NWs), nanoribbons (NRs) etc.), micro (e.g. microwires (MWs)) and chip (e.g. ultra-thin chips (UTCs)) scale structures from these materials have been shown to have performances at par with silicon-based electronics. This paper reviews the developments related to inorganic semiconducting materials based high-performance large area PE, particularly using the two routes i.e. Contact Printing (CP) and Transfer Printing (TP). The detailed survey of these technologies for large area PE onto various unconventional substrates (e.g. plastic, paper etc.) is presented along with some examples of electronic devices and circuit developed with printed NWs, NRs and UTCs. Finally, we discuss the opportunities offered by PE, and the technical challenges and viable solutions for the integration of inorganic functional materials into large areas, 3D layouts for high throughput, and industrial-scale manufacturing using printing technologies.

Printing Flexible and Hybrid Electronics for Human Skin and Eye-Interfaced Health Monitoring Systems

Advances in printing materials and techniques for flexible and hybrid electronics in the domain of connected healthcare have enabled rapid development of innovative body-interfaced health monitoring systems at a tremendous pace. Thin, flexible, and stretchable biosensors that are printed on a biocompatible soft substrate provide the ability to noninvasively and unobtrusively integrate with the human body for continuous monitoring and early detection of diseases and other conditions affecting health and well being. Hybrid integration of such biosensors with extremely well-established silicon-based microcircuit chips offers a viable route for in-sensor data processing and wireless transmission in many medical and clinical settings. Here, a set of advanced and hybrid printing techniques is summarized, covering diverse aspects ranging from active electronic materials to process capability, for their use in human skin and eye-interfaced health monitoring systems with different levels of complexity. Essential components of the devices, including constituent biomaterials, structural layouts, assembly methods, and power and data processing configurations, are outlined and discussed in a categorized manner tailored to specific clinical needs. Perspectives on the benefits and challenges of these systems in basic and applied biomedical research are presented and discussed.

Computational analysis of the orientation persistence length of the polymer chain orientation

Analyzing and interpreting the nanoscale morphology of semiconducting polymers is one of the key challenges for advancing in organic electronics. The orientation persistence length (OPL) as a tool to analyze orientation maps generated by photoemission electron microscopy (PEEM) - a state of the art tool for nanoscale imaging/spectroscopy - is presented here. The OPL is a way to quantify the chain orientation within the polymer film in a single graph. In this regard, it is a convincing method that will enable additional direct correlations between the chain orientation and electrical or optical parameters. In this report, we provide computational insights into the factors that contribute to the OPL.

Ultrafast and Chemically Stable Transfer of Au Nanomembrane Using a Water-Soluble NaCl Sacrificial Layer for Flexible Solar Cells

Large-scale industrial application of flexible device has called for development of transfer methods that deliver high yield and stability. Here, we show an ultrafast and chemically stable transfer method by using a water-soluble NaCl sacrificial layer. Extremely thin (10 nm) and large-area (4 in. wafer) free-standing Au nanomembranes (NMs) prepared on silicon substrate were successfully transferred to flexible PDMS substrate by dissolving the NaCl sacrificial layer. This transfer method enables highly transparent and electrically conductive Au NMs on PDMS substrate. To transfer a multilayered optoelectronic device, we fabricated flexible hydrogenated amorphous silicon (a-Si:H) solar cell on a glass substrate and transferred it to a PDMS substrate. There was no degradation of the electrical characteristic of the solar cell after the transfer. This approach enables the integration of high-temperature-processed a-Si:H solar cell onto low-temperature tolerant flexible polymer substrate without chemical contamination or damage.

Transfer Printing and its Applications in Flexible Electronic Devices

Flexible electronic systems have received increasing attention in the past few decades because of their wide-ranging applications that include the flexible display, eyelike digital camera, skin electronics, and intelligent surgical gloves, among many other health monitoring devices. As one of the most widely used technologies to integrate rigid functional devices with elastomeric substrates for the manufacturing of flexible electronic devices, transfer printing technology has been extensively studied. Though primarily relying on reversible interfacial adhesion, a variety of advanced transfer printing methods have been proposed and demonstrated. In this review, we first summarize the characteristics of a few representative methods of transfer printing. Next, we will introduce successful demonstrations of each method in flexible electronic devices. Moreover, the potential challenges and future development opportunities for transfer printing will then be briefly discussed.

Tape nanolithography: a rapid and simple method for fabricating flexible, wearable nanophotonic devices

This paper describes a tape nanolithography method for the rapid and economical manufacturing of flexible, wearable nanophotonic devices. This method involves the soft lithography of a donor substrate with air-void nanopatterns, subsequent deposition of materials onto the substrate surface, followed by direct taping and peeling of the deposited materials by an adhesive tape. Without using any sophisticated techniques, the nanopatterns, which are preformed on the surface of the donor substrate, automatically emerge in the deposited materials. The nanopatterns can then be transferred to the tape surface. By leveraging the works of adhesion at the interfaces of the donor substrate-deposited material-tape assembly, this method not only demonstrates sub-hundred-nanometer resolution in the transferred nanopatterns on an area of multiple square inches but also exhibits high versatility and flexibility for configuring the shapes, dimensions, and material compositions of tape-supported nanopatterns to tune their optical properties. After the tape transfer, the materials that remain at the bottom of the air-void nanopatterns on the donor substrate exhibit shapes complementary to the transferred nanopatterns on the tape surface but maintain the same composition, thus also acting as functional nanophotonic structures. Using tape nanolithography, we demonstrate several tape-supported plasmonic, dielectric, and metallo-dielectric nanostructures, as well as several devices such as refractive index sensors, conformable plasmonic surfaces, and Fabry-Perot cavity resonators. Further, we demonstrate tape nanolithography-assisted manufacturing of a standalone plasmonic nanohole film and its transfer to unconventional substrates such as a cleaved facet and the curved side of an optical fiber.

Wafer-recyclable, environment-friendly transfer printing for large-scale thin-film nanoelectronics

Transfer printing of thin-film nanoelectronics from their fabrication wafer commonly requires chemical etching on the sacrifice of wafer but is also limited by defects with a low yield. Here, we introduce a wafer-recyclable, environment-friendly transfer printing process that enables the wafer-scale separation of high-performance thin-film nanoelectronics from their fabrication wafer in a defect-free manner that enables multiple reuses of the wafer. The interfacial delamination is enabled through a controllable cracking phenomenon in a water environment at room temperature. The physically liberated thin-film nanoelectronics can be then pasted onto arbitrary places of interest, thereby endowing the particular surface with desirable add-on electronic features. Systematic experimental, theoretical, and computational studies reveal the underlying mechanics mechanism and guide manufacturability for the transfer printing process in terms of scalability, controllability, and reproducibility.

Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application

Transient memristors are prospective candidates for both secure memory systems and biointegrated electronics, which are capable to physically disappear at a programmed time with a triggered operation. However, the sneak current issue has been a considerable obstacle to achieve high-density transient crossbar array of memristors. To solve this problem, it is necessary to develop a transient switch device to turn the memory device on and off controllably. Here, a dissolvable and flexible threshold switching (TS) device with a vertically crossed structure is introduced, which exhibits a high selectivity of 10⁷ , steep turn-on slope of <8 mV dec^-1 , and fast ON/OFF switch speed within 50/25 ns. Triggered failure could be achieved after soaking the device in deionized water for 8 min at room temperature. Furthermore, a water-assisted transfer printing method is used to fabricate flexible and transient TS device arrays for bioresorbable systems, in which none of any significant degradation is observed under a bending radius of 2 mm. Integrating the selector with a transient memristor is capable of 10⁷ Gb memory implementation, indicating that the transient TS device could provide great opportunities to achieve highly integrated transient memory arrays.

Strain-induced modulation of near-field radiative transfer

In this theoretical study, we present a near-field thermal modulator that exhibits change in radiative heat transfer when subjected to mechanical stress/strain. The device has two terminals at different temperatures separated by vacuum: one fixed and one stretchable. The stretchable side contains one-dimensional grating. When subjected to mechanical strain, the effective optical properties of the stretchable side are affected upon deformation of the grating. This results in modulation of surface waves across the interfaces influencing near-field radiative heat transfer. We show that for a separation of 100 nm, it is possible to achieve 25% change in radiative heat transfer for a strain of 10%.

Novel Nano-Materials and Nano-Fabrication Techniques for Flexible Electronic Systems

Recent progress in fabricating flexible electronics has been significantly developed because of the increased interest in flexible electronics, which can be applied to enormous fields, not only conventional in electronic devices, but also in bio/eco-electronic devices. Flexible electronics can be applied to a wide range of fields, such as flexible displays, flexible power storages, flexible solar cells, wearable electronics, and healthcare monitoring devices. Recently, flexible electronics have been attached to the skin and have even been implanted into the human body for monitoring biosignals and for treatment purposes. To improve the electrical and mechanical properties of flexible electronics, nanoscale fabrications using novel nanomaterials are required. Advancements in nanoscale fabrication methods allow the construction of active materials that can be combined with ultrathin soft substrates to form flexible electronics with high performances and reliability. In this review, a wide range of flexible electronic applications via nanoscale fabrication methods, classified as either top-down or bottom-up approaches, including conventional photolithography, soft lithography, nanoimprint lithography, growth, assembly, and chemical vapor deposition (CVD), are introduced, with specific fabrication processes and results. Here, our aim is to introduce recent progress on the various fabrication methods for flexible electronics, based on novel nanomaterials, using application examples of fundamental device components for electronics and applications in healthcare systems.

Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

Monocrystalline, low defect Si thin films fabricated via 1-minute vapor deposition on a double porous layer treated by zone heating recrystallization.

Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics

Inorganic amorphous oxide semiconductor (AOS) materials such as amorphous InGaZnO (a-IGZO) possess mechanical flexibility and outstanding electrical properties, and have generated great interest for use in flexible and transparent electronic devices. In the past, however, AOS devices required higher activation energies, and hence higher processing temperatures, than organic ones to neutralize defects. It is well known that one-dimensional nanowires tend to have better carrier mobility and mechanical strength along with fewer defects than the corresponding two-dimensional films, but until now it has been difficult, costly, and impractical to fabricate such nanowires in proper alignments by either “bottom-up” growth techniques or by “top-down” e-beam lithography. Here we show a top-down, cost-effective, and scalable approach for the fabrication of parallel, laterally oriented AOS nanoribbons based on lift-off and nano-imprinting. High mobility (132 cm²/Vs), electrical stability, and transparency are obtained in a-IGZO nanoribbons, compared to the planar films of the same a-IGZO semiconductor.

Laser-Material Interactions for Flexible Applications

The use of lasers for industrial, scientific, and medical applications has received an enormous amount of attention due to the advantageous ability of precise parameter control for heat transfer. Laser-beam-induced photothermal heating and reactions can modify nanomaterials such as nanoparticles, nanowires, and two-dimensional materials including graphene, in a controlled manner. There have been numerous efforts to incorporate lasers into advanced electronic processing, especially for inorganic-based flexible electronics. In order to resolve temperature issues with plastic substrates, laser-material processing has been adopted for various applications in flexible electronics including energy devices, processors, displays, and other peripheral electronic components. Here, recent advances in laser-material interactions for inorganic-based flexible applications with regard to both materials and processes are presented.

Combining light-harvesting with detachability in high-efficiency thin-film silicon solar cells

Efforts to realize thin-film solar cells on unconventional substrates face several obstacles in achieving good energy-conversion efficiency and integrating light-management into the solar cell design. In this report a technique to circumvent these obstacles is presented: transferability and an efficient light-harvesting scheme are combined for thin-film silicon solar cells by the incorporation of a NaCl layer. Amorphous silicon solar cells in p-i-n configuration are fabricated on reusable glass substrates coated with an interlayer of NaCl. Subsequently, the solar cells are detached from the substrate by dissolution of the sacrificial NaCl layer in water and then transferred onto a plastic sheet, with a resultant post-transfer efficiency of 9%. The light-trapping effect of the surface nanotextures originating from the NaCl layer on the overlying solar cell is studied theoretically and experimentally. The enhanced light absorption in the solar cells on NaCl-coated substrates leads to significant improvement in the photocurrent and energy-conversion efficiency in solar cells with both 350 and 100 nm thick absorber layers, compared to flat-substrate solar cells. Efficient transferable thin-film solar cells hold a vast potential for widespread deployment of off-grid photovoltaics and cost reduction.

Crystalline Engineering Toward Large-Scale High-Efficiency Printable Cu(In,Ga)Se2 Thin Film Solar Cells on Flexible Substrate by Femtosecond Laser Annealing Process

Ink-printing method emerges as a viable way for manufacturing large-scale flexible Cu(In,Ga)Se₂ (CIGS) thin film photovoltaic (TFPV) devices owing to its potential for the rapid process, mass production, and low-cost nonvacuum device fabrication. Here, we brought the femtosecond laser annealing (fs-LA) process into the ink-printing CIGS thin film preparation. The effects of fs-LA treatment on the structural and optoelectronic properties of the ink-printing CIGS thin films were systematically investigated. It was observed that, while the film surface morphology remained essentially unchanged under superheating, the quality of crystallinity was significantly enhanced after the fs-LA treatment. Moreover, a better stoichiometric composition was achieved with an optimized laser scanning rate of the laser beam, presumably due to the much reduced indium segregation phenomena, which is believed to be beneficial in decreasing the defect states of In_Se, V_Se, and In_Cu. Consequently, the shunt leakage current and recombination centers were both greatly decreased, resulting in a near 20% enhancement in photovoltaic conversion efficiency.

Optimizing ultrathin Ag films for high performance oxide-metal-oxide flexible transparent electrodes through surface energy modulation and template-stripping procedures

Among new flexible transparent conductive electrode (TCE) candidates, ultrathin Ag film (UTAF) is attractive for its extremely low resistance and relatively high transparency. However, the performances of UTAF based TCEs critically depend on the threshold thickness for growth of continuous Ag films and the film morphologies. Here, we demonstrate that these two parameters could be strongly altered through the modulation of substrate surface energy. By minimizing the surface energy difference between the Ag film and substrate, a 9 nm UTAF with a sheet resistance down to 6.9 Ω sq^-1 can be obtained using an electron-beam evaporation process. The resultant UTAF is completely continuous and exhibits smoother morphologies and smaller optical absorbances in comparison to the counterpart of granular-type Ag film at the same thickness without surface modulation. Template-stripping procedure is further developed to transfer the UTAFs to flexible polymer matrixes and construct Al₂O₃/Ag/MoO_x (AAM) electrodes with excellent surface morphology as well as optical and electronic characteristics, including a root-mean-square roughness below 0.21 nm, a transparency up to 93.85% at 550 nm and a sheet resistance as low as 7.39 Ω sq^-1. These AAM based electrodes also show superiority in mechanical robustness, thermal oxidation stability and shape memory property.

Metal diffusion barriers for GaAs solar cells

Accelerated Ageing Testing (AAT) was used to assess the barrier potential of Ti, Ni, Pd and Pt. At a test temperature of 250 °C Ni offers the largest barrier potential. Based on TEM images and phase diagrams a barrier mechanism is proposed.

CMOS-Technology-Enabled Flexible and Stretchable Electronics for Internet of Everything Applications

Flexible and stretchable electronics can dramatically enhance the application of electronics for the emerging Internet of Everything applications where people, processes, data and devices will be integrated and connected, to augment quality of life. Using naturally flexible and stretchable polymeric substrates in combination with emerging organic and molecular materials, nanowires, nanoribbons, nanotubes, and 2D atomic crystal structured materials, significant progress has been made in the general area of such electronics. However, high volume manufacturing, reliability and performance per cost remain elusive goals for wide commercialization of these electronics. On the other hand, highly sophisticated but extremely reliable, batch-fabrication-capable and mature complementary metal oxide semiconductor (CMOS)-based technology has facilitated tremendous growth of today's digital world using thin-film-based electronics; in particular, bulk monocrystalline silicon (100) which is used in most of the electronics existing today. However, one fundamental challenge is that state-of-the-art CMOS electronics are physically rigid and brittle. Therefore, in this work, how CMOS-technology-enabled flexible and stretchable electronics can be developed is discussed, with particular focus on bulk monocrystalline silicon (100). A comprehensive information base to realistically devise an integration strategy by rational design of materials, devices and processes for Internet of Everything electronics is offered.

Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices

A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.

Large-Scale Nanophotonic Solar Selective Absorbers for High-Efficiency Solar Thermal Energy Conversion

An omnidirectional nanophotonic solar selective absorber is fabricated on a large scale using a template-stripping method. The nanopyramid nickel structure achieves an average absorptance of 95% at a wavelength range below 1.3 μm and a low emittance less than 10% at wavelength >2.5 μm.

Highly conductive all-plastic electrodes fabricated using a novel chemically controlled transfer-printing method

A novel transfer-printing method for high-performance all-plastic transparent electrodes is demonstrated. A solution process using H2 SO4 not only dramatically enhances the electrical conductivity of poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) over 4000 S cm(-1) but also chemically modifies its adhesion properties, thereby enabling expeditious "pick-and-place" transfer onto arbitrary surfaces using elastomeric stamps. Flexible and transparent optoelectronic devices with transferred PEDOT:PSS electrodes show superb performances.

Determination of the basic optical parameters of ZnSnN(2)

Polycrystalline ZnSnN(2) thin films were successfully prepared by DC magnetron sputtering at room temperature. Both the as-deposited and annealed films showed n-type conduction, with electron concentration varying between 1.6×10(18) and 2.3×10(17)  cm(-3) and the maximum mobility of 3.98  cm(2)  V(-1) s(-1). The basic optical parameters such as the refraction index, extinction coefficient, and absorption coefficient were precisely determined through the spectroscopic ellipsometry measurement and analysis. The optical bandgap of the ZnSnN(2)films was calculated to around 1.9 eV, with the absorption coefficient greater than 10(4)  cm(-1) at wavelengths less than 845 nm. The easy-fabricated ZnSnN(2) possesses a sound absorption coefficient ranging from the ultraviolet through visible light and into the near-infrared, comparable to some typical photovoltaic materials such as GaAs, CdTe, and InP.