Contact electrification field-effect transistor

Self-Powered Artificial Neuron Devices: Towards the All-In-One Perception and Computation System

The increasing demand for energy supply in sensing units and the computational efficiency of computation units has prompted researchers to explore novel, integrated technology that offers high efficiency and low energy consumption. Self-powered sensing technology enables environmental perception without external energy sources, while neuromorphic computation provides energy-efficient and high-performance computing capabilities. The integration of self-powered sensing technology and neuromorphic computation presents a promising solution for an all-in-one system. This review examines recent developments and advancements in self-powered artificial neuron devices based on triboelectric, piezoelectric, and photoelectric effects, focusing on their structures, mechanisms, and functions. Furthermore, it compares the electrical characteristics of various types of self-powered artificial neuron devices and discusses effective methods for enhancing their performance. Additionally, this review provides a comprehensive summary of self-powered perception systems, encompassing tactile, visual, and auditory perception systems. Moreover, it elucidates recently integrated systems that combine perception, computing, and actuation units into all-in-one configurations, aspiring to realize closed-loop control. The seamless integration of self-powered sensing and neuromorphic computation holds significant potential for shaping a more intelligent future for humanity.

Evolution of Tribotronics: From Fundamental Concepts to Potential Uses

The intelligent sensing network is one of the key components in the construction of the Internet of Things, and the power supply technology of sensor communication nodes needs to be solved urgently. As a new field combining tribo-potential with semiconductor devices, tribotronics, based on the contact electrification (CE) effect, realizes direct interaction between the external environment and semiconductor devices by combining triboelectric nanogenerator (TENG) and field-effect transistor (FET), further expanding the application prospects of micro/nano energy. In this paper, the research progress of tribotronics is systematically reviewed. Firstly, the mechanism of the CE effect and the working principles of TENG are introduced. Secondly, the regulation theory of tribo-potential on carrier transportation in semiconductor devices and the research status of tribotronic transistors are summarized. Subsequently, the applications of tribotronics in logic circuits and memory devices, smart sensors, and artificial synapses in recent years are demonstrated. Finally, the challenges and development prospects of tribotronics in the future are projected.

Conformal Neuromorphic Bioelectronics for Sense Digitalization

Sense digitalization, the process of transforming sensory experiences into digital data, is an emerging research frontier that links the physical world with human perception and interaction. Inspired by the adaptability, fault tolerance, robustness, and energy efficiency of biological senses, this field drives the development of numerous innovative digitalization techniques. Neuromorphic bioelectronics, characterized by biomimetic adaptability, stand out for their seamless bidirectional interactions with biological entities through stimulus-response and feedback loops, incorporating bio-neuromorphic intelligence for information exchange. This review illustrates recent progress in sensory digitalization, encompassing not only the digital representation of physical sensations such as touch, light, and temperature, correlating to tactile, visual, and thermal perceptions, but also the detection of biochemical stimuli such as gases, ions, and neurotransmitters, mirroring olfactory, gustatory, and neural processes. It thoroughly examines the material design, device manufacturing, and system integration, offering detailed insights. However, the field faces significant challenges, including the development of new device/system paradigms, forging genuine connections with biological systems, ensuring compatibility with the semiconductor industry and overcoming the absence of standardization. Future ambition includes realization of biocompatible neural prosthetics, exoskeletons, soft humanoid robots, and cybernetic devices that integrate smoothly with both biological tissues and artificial components.

A Degradable Tribotronic Transistor for Self-Destructing Intelligent Package e-Labels

Recently, discarded electronic products have caused serious environmental pollution and information security issues, which have attracted widespread attention. Here, a degradable tribotronic transistor (DTT) for self-destructing intelligent package e-labels has been developed, integrated by a triboelectric nanogenerator and a protonic field-effect transistor with sodium alginate as a dielectric layer. The triboelectric potential generated by external contact electrification is used as the gate voltage of the organic field-effect transistor, which regulates carrier transport through proton migration/accumulation. The DTT has successfully demonstrated its output characteristics with a high sensitivity of 0.336 mm-1 and a resolution of over 100 μm. Moreover, the DTT can be dissolved in water within 3 min and completely degraded in soil within 12 days, demonstrating its excellent degradation characteristics, which may contribute to environmental protection. Finally, an intelligent package e-label based on the modulation of the DTT is demonstrated, which can display information about the package by a human touch. The e-label will automatically fail due to the degradation of the DTT over time, achieving the purpose of information confidentiality. This work has not only presented a degradable tribotronic transistor for package e-labels but also exhibited bright prospects in military security, information hiding, logistics privacy, and personal affairs.

Spike timing-based coding in neuromimetic tactile system enables dynamic object classification

Rapid processing of tactile information is essential to human haptic exploration and dexterous object manipulation. Conventional electronic skins generate frames of tactile signals upon interaction with objects. Unfortunately, they are generally ill-suited for efficient coding of temporal information and rapid feature extraction. In this work, we report a neuromorphic tactile system that uses spike timing, especially the first-spike timing, to code dynamic tactile information about touch and grasp. This strategy enables the system to seamlessly code highly dynamic information with millisecond temporal resolution on par with the biological nervous system, yielding dynamic extraction of tactile features. Upon interaction with objects, the system rapidly classifies them in the initial phase of touch and grasp, thus paving the way to fast tactile feedback desired for neuro-robotics and neuro-prosthetics.

Contact-separation-induced self-recoverable mechanoluminescence of CaF2:Tb3+/PDMS elastomer

Centrosymmetric-oxide/polydimethylsiloxane elastomers emit ultra-strong non-pre-irradiation mechanoluminescence under stress and are considered one of the most ideal mechanoluminescence materials. However, previous centrosymmetric-oxide/polydimethylsiloxane elastomers show severe mechanoluminescence degradation under stretching, which limits their use in applications. Here we show an elastomer based on centrosymmetric fluoride CaF2:Tb3+ and polydimethylsiloxane, with mechanoluminescence that can self-recover after each stretching. Experimentation indicates that the self-recoverable mechanoluminescence of the CaF2:Tb3+/polydimethylsiloxane elastomer occurs essentially due to contact electrification arising from contact-separation interactions between the centrosymmetric phosphors and the polydimethylsiloxane. Accordingly, a contact-separation cycle model of the phosphor-polydimethylsiloxane couple is established, and first-principles calculations are performed to model state energies in the contact-separation cycle. The results reveal that the fluoride-polydimethylsiloxane couple helps to induce contact electrification and maintain the contact-separation cycle at the interface, resulting in the self-recoverable mechanoluminescence of the CaF2:Tb3+/polydimethylsiloxane elastomer. Therefore, it would be a good strategy to develop self-recoverable mechanoluminescence elastomers based on centrosymmetric fluoride phosphors and polydimethylsiloxane.

The Potential of Electrospinning to Enable the Realization of Energy-Autonomous Wearable Sensing Systems

The market for wearable electronic devices is experiencing significant growth and increasing potential for the future. Researchers worldwide are actively working to improve these devices, particularly in developing wearable electronics with balanced functionality and wearability for commercialization. Electrospinning, a technology that creates nano/microfiber-based membranes with high surface area, porosity, and favorable mechanical properties for human in vitro and in vivo applications using a broad range of materials, is proving to be a promising approach. Wearable electronic devices can use mechanical, thermal, evaporative and solar energy harvesting technologies to generate power for future energy needs, providing more options than traditional sources. This review offers a comprehensive analysis of how electrospinning technology can be used in energy-autonomous wearable wireless sensing systems. It provides an overview of the electrospinning technology, fundamental mechanisms, and applications in energy scavenging, human physiological signal sensing, energy storage, and antenna for data transmission. The review discusses combining wearable electronic technology and textile engineering to create superior wearable devices and increase future collaboration opportunities. Additionally, the challenges related to conducting appropriate testing for market-ready products using these devices are also discussed.

Electret Modulation Strategy to Enhance the Photosensitivity Performance of Two-Dimensional Molybdenum Sulfide

Due to the limited light absorption efficiency of atomic thickness layers and the existence of quenching effects, photodetectors solely made of transition metal dichalcogenides (TMDs) have exhibited an unsatisfactory detection performance. In this article, electret/TMD hybridized devices were proposed by vertically coupling a MoS2 channel and the PTFE film, which reveals an optimized photodetection behavior. Negative charges were generated in the PTFE layer through the corona charging method, akin to applying a negative bias on the MoS2 channel in lieu of a traditional voltage-driven back gate. Under a charging voltage of -6 kV, PTFE/MoS2 devices reveal improved photodetection performance (Rhybrid = 67.95A/W versus Ronly = 3.37 A/W, at 470 nm, 1.20 mW cm-2) and faster recovery speed (τd(hybrid) = 2000 ms versus τd(only) = 2900 ms) compared to those bare MoS2 counterparts. The optimal detection performance (2 orders of magnitude) was obtained when the charging voltage was -2 kV, limited by the minimum of the carrier density in MoS2 channels. This study provides an alternative strategy to optimize optoelectronic devices based on the 2D components through non-voltage-driven gating.

Self-Powered Sensing in Wearable Electronics─A Paradigm Shift Technology

With the advancements in materials science and micro/nanoengineering, the field of wearable electronics has experienced a rapid growth and significantly impacted and transformed various aspects of daily human life. These devices enable individuals to conveniently access health assessments without visiting hospitals and provide continuous, detailed monitoring to create comprehensive health data sets for physicians to analyze and diagnose. Nonetheless, several challenges continue to hinder the practical application of wearable electronics, such as skin compliance, biocompatibility, stability, and power supply. In this review, we address the power supply issue and examine recent innovative self-powered technologies for wearable electronics. Specifically, we explore self-powered sensors and self-powered systems, the two primary strategies employed in this field. The former emphasizes the integration of nanogenerator devices as sensing units, thereby reducing overall system power consumption, while the latter focuses on utilizing nanogenerator devices as power sources to drive the entire sensing system. Finally, we present the future challenges and perspectives for self-powered wearable electronics.

Tungsten-Doped Indium Tin Oxide Thin-Film Transistors for Dual-mode Proximity Sensing Application

Technologies for human-machine interactions are booming now. In order to achieve multifunctional sensing abilities of electronic skins, further developments of various sensors are in urgent demand. Herein, a dual-mode proximity sensor based on an oxide thin-film transistor (TFT) is reported. Although InSnO (ITO) is featured with high mobility, the inherent high carrier concentration limits its use as a channel material for thin-film transistors. Herein, the tungsten element was introduced as a carrier suppressor to develop ITO-based semiconducting materials and devices. TFTs with amorphous tungsten-doped ITO (ITWO) channel layers were fabricated. As for a flat panel display application, the TFT device from 250 °C-annealed ITWO layer with an atomic ratio of In/Sn/W = 86:9:5 presented the optimal device performance with carrier mobility of 11.53 cm2 V-1 s-1, swing subthreshold of 0.66 V dec-1, threshold voltage of -2.18 V, and Ion/Ioff ratio of 3.33 × 107 and much small hysteresis of transfer characteristic. ITWO TFT devices were further developed as dual-mode proximity sensors that could work with both extended-gate and compact configurations, where the drain current was directly related to the surface potential of a charged object and the distance between the sensing end and the object, enabling the proximity sensing of charged stimuli. For extended-gate-configured proximity sensing, a charged object modulated the formation of a conductive channel at the semiconductor/SiO2 interface, while this conductive channel occurred at the semiconductor/air interface for compact-configured sensing. Formation of the conductive channel of the compact transistor was modulated by the electric field component in the direction perpendicular to the interface, and the drain current was sensitive to the orientation of the approaching object, which implied the capacity of angle sensing to the approach of a charged object. This work further emphasizes that the basic device performance should be optimized according to its specific application scenarios rather than only considering the requirements of the panel display.

Triboelectric Nanogenerators Based on 2D Materials: From Materials and Devices to Applications

Recently, there has been an increasing consumption of fossil fuels such as oil and natural gas in both industrial production and daily life. This high demand for non-renewable energy sources has prompted researchers to investigate sustainable and renewable energy alternatives. The development and production of nanogenerators provide a promising solution to address the energy crisis. Triboelectric nanogenerators, in particular, have attracted significant attention due to their portability, stability, high energy conversion efficiency, and compatibility with a wide range of materials. Triboelectric nanogenerators (TENGs) have many potential applications in various fields, such as artificial intelligence (AI) and the Internet of Things (IoT). Additionally, by virtue of their remarkable physical and chemical properties, two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN), MXenes, and layered double hydroxides (LDHs), have played a crucial role in the advancement of TENGs. This review summarizes recent research progress on TENGs based on 2D materials, from materials to their practical applications, and provides suggestions and prospects for future research.

A Flexible Tribotronic Artificial Synapse with Bioinspired Neurosensory Behavior

As key components of artificial afferent nervous systems, synaptic devices can mimic the physiological synaptic behaviors, which have attracted extensive attentions. Here, a flexible tribotronic artificial synapse (TAS) with bioinspired neurosensory behavior is developed. The triboelectric potential generated by the external contact electrification is used as the ion-gel-gate voltage of the organic thin film transistor, which can tune the carriers transport through the migration/accumulation of ions. The TAS successfully demonstrates a series of synaptic behaviors by external stimuli, such as excitatory postsynaptic current, paired-pulse facilitation, and the hierarchical memory process from sensory memory to short-term memory and long-term memory. Moreover, the synaptic behaviors remained stable under the strain condition with a bending radius of 20 mm, and the TAS still exhibits excellent durability after 1000 bending cycles. Finally, Pavlovian conditioning has been successfully mimicked by applying force and vibration as food and bell, respectively. This work demonstrates a bioinspired flexible artificial synapse that will help to facilitate the development of artificial afferent nervous systems, which is great significance to the practical application of artificial limbs, robotics, and bionics in future.

Triboelectric Potential Powered High-Performance Organic Transistor Array

Triboelectric potential gated transistors have inspired various applications toward mechanical behavior controlled logic circuits, multifunctional sensors, artificial sensory neurons, etc. Their rapid development urgently calls for high-performance devices and corresponding figure of merits to standardize the tribotronic gating properties. Organic semiconductors paired with solution processability promise low-cost manufacture of high-performance tribotronic transistor devices/arrays. Here, we demonstrate a record high-performance tribotronic transistor array composed of an integrated triboelectric nanogenerator (TENG) and a large-area device array of C8-BTBT-PS transistors. The working mechanism of effective triboelectric potential gating is elaborately explained from the aspect of conjugated energy bands of the contact-electrification mediums and organic semiconductors. Driven by the triboelectric potential, the tribotronic transistor shows superior properties of record high current on/off ratios (>10⁸), a steep subthreshold swing (29.89 μm/dec), high stability, and excellent reproducibility. Moreover, tribotronic logic devices modulated by mechanical displacement have also been demonstrated with good stability and a high gain of 1260 V/mm. The demonstrated large-area tribotronic transistor array of organic semiconductor exhibits record high performance and offers an effective R&D platform for mechano-driven electronic terminals, interactive intelligent system, artificial robotic skin, etc.

Dielectric Manipulated Charge Dynamics in Contact Electrification

Surface charge density has been demonstrated to be significantly impacted by the dielectric properties of tribomaterials. However, the ambiguous physical mechanism of dielectric manipulated charge behavior still restricts the construction of high-performance tribomaterials. Here, using the atomic force microscopy and Kelvin probe force microscopy, an in situ method was conducted to investigate the contact electrification and charge dynamics on a typical tribomaterial (i.e., BaTiO₃/PVDF-TrFE nanocomposite) at nanoscale. Combined with the characterization of triboelectric device at macroscale, it is found that the number of transferred electrons increases with contact force/area and tends to reach saturation under increased friction cycles. The incorporated high permittivity BaTiO₃ nanoparticles enhance the capacitance and electron trapping capability of the nanocomposites, efficiently inhibiting the lateral diffusion of electrons and improving the output performance of the triboelectric devices. Exponential decay of the surface potential is observed over monitoring time for all dielectric samples. At high BaTiO₃ loadings, more electrons can drift into the bulk and combine with the induced charges on the back electrode, forming a large leakage current and accordingly accelerating the electron dissipation. Hence, the charge trapping/storing and dissipating, as well as the charge attracting properties, should be comprehensively considered in the design of high-performance tribomaterials.

Self-powered bifunctional sensor based on tribotronic planar graphene transistors

With the development of material science, micro-nano-fabrication and microelectronics, the higher level requirements are posed on the electronic skins (E-skin). The lower energy consumption and multiple functions are the imperative requirements to spurred scientists and mechanists to make joint efforts to meet. To achieve lower energy consumption, a promising energy-harvesting style of triboelectric nanogenerators (TENG) is incorporated into the field effect transistors (FETs) to play the important role for sensor. For bifunctional sensor, to harness the difficult for reflecting the magnitude of frequency, we resorted to synaptic transistors to achieve more intelligentization. Furthermore, with regards to the configuration of FET, we continued previous work: using the electrolyte gate dielectrics of FET-ion gel as the electrification layer to achieve high efficient, compact and extensively adoption for mechanosensation. The working principle of the GFET was based on the coupling effects of the FET and the TENG. This newly emerged self-powered sensor would offer a new platform for lower power consumption sensor for human-machine interface and intelligent robot.

Highly sensitive gas sensing platforms based on field effect Transistor-A review

Highly selective, sensitive and fast gas sensing has attracted increasing attention in the fields of environmental protection, industrial production, personal safety as well as medical diagnostics. Field effect transistor (FET) sensors have been extensively investigated in gas sensing fields due to their small size, high sensitivity, high reliability and low energy consumption. This comprehensive review aims to discuss the recent advances in FET gas sensors based on materials such as carbon nanotubes, silicon carbide, silicon, metal oxides-, graphene-, transition metal dichalcogenides- and 2-dimensional black phosphorus. We first introduce different types of sensor structures and elaborate the gas-sensing mechanisms. Then, we describe the optimizing strategies for sensing performances, response parameters, FET based dual-mode sensors and FET based logic circuit sensors. Moreover, we present the key advances of the above materials in gas sensing performances. Meanwhile, shortcomings of such materials are also discussed and the future development of this field is proposed in this review.

Hydrogenation of diamond nanowire surfaces for effective electrostatic charge storage

We report a novel versatile method for writing charged areas on diamond nanowire (DNW) surfaces using an atomic force microscopy (AFM) tip. Transmission electron microscopy (TEM) investigations revealed the existence of abundant plate-like diamond aggregates, which were encased in layers of graphite, forming nano-sized diamond-graphite composites (DGCs) on DNW surfaces. These DGCs are the main feature, acting as charge-trapping centers and storing electrostatic charge. A hydrogenation process has been observed effectively enhancing the charge-trapping properties of these DNW materials. The effective charge trapping properties with hydrogenation are ascribed to the disintegration of the DGCs into smaller pieces, with an overall increase in the metallic nanographitic phase fractions in a dielectric diamond matrix. Moreover, the written charge on the surface can be easily modified, re-written, or completely erased, enabling application in diamond-based re-writable electronic devices. However, excessive hydrogenation degrades the charge-trapping properties, which is attributed to the etching of the DGCs from the surface. This study demonstrates the potential importance of a simple hydrogenation process in effective electrostatic charge trapping and storage for diamond related nanocarbon materials and the role of DGCs to further enhance it.

Contact-electrification-activated artificial afferents at femtojoule energy

Low power electronics endowed with artificial intelligence and biological afferent characters are beneficial to neuromorphic sensory network. Highly distributed synaptic sensory neurons are more readily driven by portable, distributed, and ubiquitous power sources. Here, we report a contact-electrification-activated artificial afferent at femtojoule energy. Upon the contact-electrification effect, the induced triboelectric signals activate the ion-gel-gated MoS₂ postsynaptic transistor, endowing the artificial afferent with the adaptive capacity to carry out spatiotemporal recognition/sensation on external stimuli (e.g., displacements, pressures and touch patterns). The decay time of the synaptic device is in the range of sensory memory stage. The energy dissipation of the artificial afferents is significantly reduced to 11.9 fJ per spike. Furthermore, the artificial afferents are demonstrated to be capable of recognizing the spatiotemporal information of touch patterns. This work is of great significance for the construction of next-generation neuromorphic sensory network, self-powered biomimetic electronics and intelligent interactive equipment.

Low power electronics endowed with artificial intelligence and biological afferent characters are beneficial to neuromorphic sensory network. Here, the authors report contact-electrification-activated artificial afferent at femtojoule energy, which is able to carry out spatiotemporal recognition on external stimuli.

Bioinspired mechano-photonic artificial synapse based on graphene/MoS2 heterostructure

Developing multifunctional and diversified artificial neural systems to integrate multimodal plasticity, memory, and supervised learning functions is an important task toward the emulation of neuromorphic computation. Here, we present a bioinspired mechano-photonic artificial synapse with synergistic mechanical and optical plasticity. The artificial synapse is composed of an optoelectronic transistor based on graphene/MoS₂ heterostructure and an integrated triboelectric nanogenerator. By controlling the charge transfer/exchange in the heterostructure with triboelectric potential, the optoelectronic synaptic behaviors can be readily modulated, including postsynaptic photocurrents, persistent photoconductivity, and photosensitivity. The photonic synaptic plasticity is elaborately investigated under the synergistic effect of mechanical displacement and the light pulses embodying different spatiotemporal information. Furthermore, artificial neural networks are simulated to demonstrate the improved image recognition accuracy up to 92% assisted with mechanical plasticization. The mechano-photonic artificial synapse is highly promising for implementing mixed-modal interaction, emulating complex biological nervous system, and promoting the development of interactive artificial intelligence.

Ion Gel Capacitively Coupled Tribotronic Gating for Multiparameter Distance Sensing

Developing sophisticated device architectures is of great significance to go beyond Moore's law with versatility toward human-machine interaction and artificial intelligence. Tribotronics/tribo-iontronics offer a direct way to controlling the transport properties of semiconductor devices by mechanical actions, which fundamentally relies on how to enhance the tribotronic gating effect through device engineering. Here, we propose a universal method to enhance the tribotronic properties through electric double layer (EDL) capacitive coupling. By preparing an ion gel layer on top of tribotronic graphene transistor, we demonstrate a dual-mode field effect transistor (i.e., a tribotronic transistor with capacitively coupled ion gel and an ion-gel-gated graphene transistor with a second tribotronic gate). The resulted tribotronic gating performances are greatly improved by twice for the on-state current and four times for the on/off ratio (the first mode). It can also be utilized as a multiparameter distance sensor with drain current increased by ∼600 μA and threshold voltage shifted by ∼0.8 V under a mechanical displacement of 0.25 mm (the second mode). The proposed methodology of EDL capacitive coupling offers a facile and efficient way to designing more sophisticated tribotronic devices with superior performance and multifunctional sensations.

Nanoscale triboelectrification gated transistor

Tribotronics has attracted great attention owing to the demonstrated triboelectrification-controlled electronics and established direct modulation mechanism by external mechanical stimuli. Here, a nanoscale triboelectrification-gated transistor has been studied with contact-mode atomic force microscopy and scanning Kevin probe microscopy. The detailed working principle was analyzed at first, in which the nanoscale triboelectrification can tune the carrier transport in the transistor. Then with the manipulated nanoscale triboelectrification, the effects of contact force, scan speed, contact cycles, contact region and charge diffusion on the transistor were investigated, respectively. Moreover, the manipulated nanoscale triboelectrification serving as a rewritable floating gate has demonstrated different modulation effects by an applied tip voltage. This work has realized the nanoscale triboelectric modulation on electronics, which could provide a deep understanding for the theoretical mechanism of tribotronics and may have great applications in nanoscale transistor, micro/nano-electronic circuit and nano-electromechanical system.

Though tribotronics, e.g., semiconductor electronics that utilize triboelectricity, is a promising technology, current devices have limited application in micro/nano electronics. Here, the authors report a triboelectrification-gated transistor with triboelectric modulation at the nanoscale.

Triboelectric effect-modulated varifocal liquid lens

Electrically modulated varifocal liquid lenses, which are usually modulated by an external high voltage power source, have attracted much attention due to their bright application prospects in artificial optical systems. Here, a triboelectric nanogenerator (TENG)-based varifocal liquid lens (TVLL) has been demonstrated, in which the focal length can be directly modulated by external mechanical sliding. A dielectrophoretic force is generated by the TENG through the transfer of triboelectric charges in the asymmetric electrodes, which is used to continuously change the shape of the air-liquid interface between concave and convex without any complicated boost converter. Moreover, a triboelectric magnifying glass based on the accurate modulation effect of the TVLL on a light beam has been demonstrated. In this work, the TENG is used as a medium to modulate and accurately control the focal length of the liquid lens by an external mechanical stimulus, which may have great applications in micro-optical-electro-mechanical systems (MOEMS), human-machine interaction, artificial vision systems, etc.

Intrinsically Stretchable Organic-Tribotronic-Transistor for Tactile Sensing

Stretchable electronics are of great significance for the development of the next-generation smart interactive systems. Here, we propose an intrinsically stretchable organic tribotronic transistor (SOTT) without a top gate electrode, which is composed of a stretchable substrate, silver nanowire electrodes, semiconductor blends, and a nonpolar elastomer dielectric. The drain-source current of the SOTT can be modulated by external contact electrification with the dielectric layer. Under 0-50% stretching both parallel and perpendicular to the channel directions, the SOTT retains great output performance. After being stretched to 50% for thousands of cycles, the SOTT can survive with excellent stability. Moreover, the SOTT can be conformably attached to the human hand, which can be used for tactile signal perception in human-machine interaction and for controlling smart home devices and robots. This work has realized a stretchable tribotronic transistor as the tactile sensor for smart interaction, which has extended the application of tribotronics in the human-machine interface, wearable electronics, and robotics.

Large-Area Integrated Triboelectric Sensor Array for Wireless Static and Dynamic Pressure Detection and Mapping

Large-area flexible pressure sensors are of paramount importance for various future applications, such as electronic skin, human-machine interfacing, and health-monitoring devices. Here, a self-powered and large-area integrated triboelectric sensor array (ITSA) based on coupling a triboelectric sensor array and an array chip of CD4066 through a traditional connection is reported. Enabled by a simple and cost-effective fabrication process, the size of the ITSA can be scaled up to 38 × 38 cm² . In addition, unlike previously proposed triboelectric sensors arrays, which can only react to the dynamic interaction, this ITSA is able to detect static and dynamic pressure. Moreover, through integrating the ITSA with a signal processing circuit, a complete wireless sensing system is present. Diverse applications of the system are demonstrated in detail, including detecting pressure, identifying position, tracking trajectory, and recognizing the profile of external contact objects. Thus, the ITSA in this work opens a new route in the direction of large-area, self-powered, and wireless triboelectric sensing systems.

Triboiontronic Transistor of MoS2

Electric double layers (EDLs) formed in electrolyte-gated field-effect transistors (FETs) induce an extremely large local electric field that gives a highly efficient charge carrier control in the semiconductor channel. To achieve highly efficient triboelectric potential gating on the FET and explore diversified applications of electric double layer FETs (EDL-FETs), a triboiontronic transistor is proposed to bridge triboelectric potential modulation and ion-controlled semiconductor devices. Utilizing the triboelectric potential instead of applying an external gate voltage, the triboiontronic MoS₂ transistor is efficiently operated owing to the formation of EDLs in the ion-gel dielectric layer. The operation mechanism of the triboiontronic transistor is proposed, and high current on/off ratio over 10⁷ , low threshold value (75 μm), and steep switching properties (20 µm dec^-1 ) are achieved. A triboiontronic logic inverter with desirable gain (8.3 V mm^-1 ), low power consumption, and high stability is also demonstrated. This work presents a low-power-consuming, active, and a general approach to efficiently modulate semiconductor devices through mechanical instructions, which has great potential in human-machine interaction, electronic skin, and intelligent wearable devices. The proposed triboiontronics utilize ion migration and arrangement triggered by mechanical stimuli to control electronic properties, which are ready to deliver new interdisciplinary research directions.

Recent progress in piezotronics and tribotronics

As the electronic technology is approaching its limits of materials and processing, a smart interaction between functional device and environment is a promising way for future electronic technology above the Moore's law. The mechanical signal triggering is the most common and natural way for the smart interactions, which has realized direct interaction between human/ambient and electronics and artificial intelligence. In 2006, the piezotronic effect, as a novel effect, was first proposed by Wang to achieve the effective, adaptive and seamless interactions between electronic devices and the external stress, which utilizes the piezoelectric polarization potential as the virtual gate to tune/control the carriers' transportation in the electronic device. Since then, this new effect has been widely observed in many low-dimensional semiconductors such as ZnO, GaN, CdS nanowires, and 2D MoS₂. In extension, tribotronics was first proposed in 2014 by Wang, which is about the devices manufactured using the electrostatic potential created by triboelectrification as a 'gate' voltage to tune/control energy transformation and electrical transport in semiconductors for the smart interaction between device and environment. Tribotronics has made rapid research progress and many tribotronic functional devices have been studied with a variety of materials, such as tribotronic tactile switch, memory, hydrogen sensor and phototransistor. This review highlights advances in piezotronics and tribotronics with focus on fundamental theories, nanoscale materials, functional devices and simulations. Our emphasis is mainly about their application for third-generation semiconductor. The concepts and results presented in this review show that the piezotronics and tribotronics will facilitate the development of MEMS/NEMS, self-powered sensing, man-computer interfacing, and active wearable electronics.

Tribotronic bipolar junction transistor for mechanical frequency monitoring and use as touch switch

Tribotronics, a new field that involves the coupling of triboelectricity and semiconductors, has attracted great interest in the nanoenergy and nanoelectronics domains. This paper proposes a tribotronic bipolar junction transistor (TBJT) that incorporates a bipolar junction transistor and a triboelectric nanogenerator (TENG) in the single-electrode mode. When the mobile triboelectric layer slides on the device surface for electrification, a bias voltage is created and applied to the emitter junction, and then the base current from the TENG is amplified. Based on the fabricated TBJT, a mechanical frequency monitoring sensor with high sensitivity and excellent stability and a finger-triggered touch switch were developed. This work demonstrated for the first time a tribotronic device with simultaneously controlled voltage and current voltage/current simultaneously controlled tribotronic device, which has promising potential applications in micro/nano-sensors, human-machine interactions, intelligent instrumentation, wearable electronics, and other applications.

Controlling Surface Charge Generated by Contact Electrification: Strategies and Applications

Contact electrification is the phenomenon in which charge is generated on the surfaces of materials after they come into contact. The surface charge generated has traditionally been known to cause a vast range of undesirable consequences in our lives and in industry; on the other hand, it can also give rise to many types of useful applications. In addition, there has been a lot of interest in recent years for fabricating devices and materials based on regulating a desired amount of surface charge. It is thus important to understand the general strategies for increasing, decreasing, or controlling the surface charge generated by contact electrification. Herein, the fundamental mechanisms for influencing the amount of charge generated, the methods used for implementing these mechanisms, and some of the recent interesting applications that require regulating the amount of surface charge generated by contact electrification, are briefly summarized.

Dynamic Electronic Doping for Correlated Oxides by a Triboelectric Nanogenerator

The metal-insulator transition of vanadium dioxide (VO₂ ) is exceptionally sensitive to charge density and electron orbital occupancy. Thus three-terminal field-effect transistors with VO₂ channels are widely adopted to control the phase transition by external gating voltage. However, current leakage, electrical breakdown, or interfacial electrochemical reactions may be inevitable if conventional solid dielectrics or ionic-liquid layers are used, which possibly induce Joule heating or doping in the VO₂ layer and make the voltage-controlled phase transition more complex. Here, a triboelectric nanogenerator (TENG) and a VO₂ film are combined for a novel TENG-VO₂ device, which can overcome the abovementioned challenges and achieve electron-doping-induced phase modulation. By taking advantage of the TENG structure, electrons can be induced in the VO₂ channel and thus adjust the electronic states of the VO₂ , simultaneously. The modulation degree of the VO₂ resistance depends on the temperature, and the major variation occurs when the temperature is in the phase-transition region. The accumulation of electrons in the VO₂ channel also is simulated by finite element analysis, and the electron doping mechanism is verified by theoretical calculations. The results provide a promising approach to develop a novel type of tribotronic transistor and new electronic doping technology.

Mechanosensation-Active Matrix Based on Direct-Contact Tribotronic Planar Graphene Transistor Array

Mechanosensitive electronics aims at replicating the multifunctions of human skin to realize quantitative conversion of external stimuli into electronic signals and provide corresponding feedback instructions. Here, we report a mechanosensation-active matrix based on a direct-contact tribotronic planar graphene transistor array. Ion gel is utilized as both the dielectric in the graphene transistor and the friction layer for triboelectric potential coupling to achieve highly efficient gating and sensation properties. Different contact distances between the ion gel and other friction materials produce different triboelectric potentials, which are directly coupled to the graphene channel and lead to different output signals through modulating the Fermi level of graphene. Based on this mechanism, the tribotronic graphene transistor is capable of sensing approaching distances, recognizing the category of different materials, and even distinguishing voices. It possesses excellent sensing properties, including high sensitivity (0.16 mm^-1), fast response time (∼15 ms), and excellent durability (over 1000 cycles). Furthermore, the fabricated mechanosensation-active matrix is demonstrated to sense spatial contact distances and visualize a 2D color mapping of the target object. The tribotronic active matrix with ion gel as dielectric/friction layer provides a route for efficient and low-power-consuming mechanosensation in a noninvasive fashion. It is of great significance in multifunction sensory systems, wearable human-machine interactive interfaces, artificial electronic skin, and future telemedicine for patient surveillance.

Tunable Tribotronic Dual-Gate Logic Devices Based on 2D MoS2 and Black Phosphorus

With the Moore's law hitting the bottleneck of scaling-down in size (below 10 nm), personalized and multifunctional electronics with an integration of 2D materials and self-powering technology emerge as a new direction of scientific research. Here, a tunable tribotronic dual-gate logic device based on a MoS₂ field-effect transistor (FET), a black phosphorus FET and a sliding mode triboelectric nanogenerator (TENG) is reported. The triboelectric potential produced from the TENG can efficiently drive the transistors and logic devices without applying gate voltages. High performance tribotronic transistors are achieved with on/off ratio exceeding 106 and cutoff current below 1 pA μm^-1 . Tunable electrical behaviors of the logic device are also realized, including tunable gains (improved to ≈13.8) and power consumptions (≈1 nW). This work offers an active, low-power-consuming, and universal approach to modulate semiconductor devices and logic circuits based on 2D materials with TENG, which can be used in microelectromechanical systems, human-machine interfacing, data processing and transmission.

Self-Powered Electrostatic Adsorption Face Mask Based on a Triboelectric Nanogenerator

The physical filtration mechanism of a traditional face mask has a low removal efficiency of ultrafine particulates in the size range of 10-1000 nm, which are badly harmful to human health. Herein, a novel self-powered electrostatic adsorption face mask (SEA-FM) based on the poly(vinylidene fluoride) electrospun nanofiber film (PVDF-ESNF) and a triboelectric nanogenerator (TENG) driven by respiration (R-TENG) is developed. The ultrafine particulates are electrostatically adsorbed by the PVDF-ESNF, and the R-TENG can continually provide electrostatic charges in this adsorption process by respiration. On the basis of the R-TENG, the SEA-FM shows that the removal efficiency of coarse and fine particulates is higher than 99.2 wt % and the removal efficiency of ultrafine particulates is still as high as 86.9 wt % after continually wearing for 240 min and a 30-day interval. This work has proposed as a new method of wearable air filtration and may have great prospects in human health, self-powered electronics, and wearable devices.

An alginate film-based degradable triboelectric nanogenerator

Alginate, as a natural linear polysaccharide derived from brown sea algae, has the advantage of low toxicity, good biocompatibility, and biodegradability, which has aroused wide interests in recent years. In this study, a degradable triboelectric generator based on an alginate film is presented. The calcium alginate film, which is prepared by a simple freeze-drying method and a crosslinking reaction, has a form of porous structures that are beneficial for triboelectric power generation. The fabricated TENG has a stable output performance with a maximum voltage, current, and power of 33 V, 150 nA, and 9.5 μW, respectively. The performances of the TENG were investigated at different thicknesses of the calcium alginate film and various concentrations of the sodium alginate solution, as well as the degradability of the film with different thicknesses and temperatures. In addition, the TENG was designed for harvesting water wave energy in a low-frequency range from 1 to 4 Hz. This study is promising to provide new insights to develop degradable and eco-friendly TENG based on ocean plants and expand the application range in blue energy.

A degradable triboelectric generator based on an alginate film has been proposed, which can be used to harvest water wave energy.

Bioinspired Tribotronic Resistive Switching Memory for Self-Powered Memorizing Mechanical Stimuli

Haptic memory, from the interaction of skin and brain, can not only perceive external stimuli but also memorize it after removing the external stimuli. For the mimicry of human sensory memory, a self-powered artificial tactile memorizing system was developed by coupling bionic electronic skin and nonvolatile resistive random access memory (RRAM). The tribotronic nanogenerator is utilized as electronic skin to transform the touching signal into electric pulse, which will be programmed into the artificial brain: RRAM. Because of the advanced structural designs and accurate parameter matching, including the output voltages and the resistances in different resistive states, the artificial brain can be operated in self-powered mode to memorize the touch stimuli with the responsivity up to 20 times. For demonstrating the application potential of this system, it was fabricated as an independently addressed matrix to realize the memorizing of motion trace in two-dimensional space. The newly designed self-powered nonvolatile system has broad applications in next-generation high-performance sensors, artificial intelligence, and bionics.

Flexible Organic Tribotronic Transistor for Pressure and Magnetic Sensing

Flexible electronics has attracted enormous interest in wearable electronics and human-machine interfacing. Here, a flexible organic tribotronic transistor (FOTT) without a top gate electrode has been demonstrated. The FOTT is fabricated on a flexible polyethylene terephthalate film using the p-type pentacene and poly(methyl methacrylate)/Cytop composites as the conductive channel and dielectric layer, respectively. The charge carriers can be modulated by the contact electrification between the dielectric layer and a mobile triboelectric layer. Based on the fabricated FOTT, pressure and magnetic sensors have been developed, respectively, that exhibit great sensitivity, fast response time, and excellent stability. The FOTT in this simple structure shows bright potentials of tribotronics in human-machine interaction, electronic skins, wearable electronics, intelligent sensing, and so on.

Tribotronic Tuning Diode for Active Analog Signal Modulation

Realizing active interaction with external environment/stimuli is a great challenge for current electronics. In this paper, a tribotronic tuning diode (TTD) is proposed by coupling a variable capacitance diode and a triboelectric nanogenerator in free-standing sliding mode. When the friction layer is sliding on the device surface for electrification, a reverse bias voltage is created and applied to the diode for tuning the junction capacitance. When the sliding distance increases from 0 to 25 mm, the capacitance of the TTD decreases from about 39 to 8 pF. The proposed TTD has been integrated into analog circuits and exhibited excellent performances in frequency modulation, phase shift, and filtering by sliding a finger. This work has demonstrated tunable diode and active analog signal modulation by tribotronics, which has great potential to replace ordinary variable capacitance diodes in various practical applications such as signal processing, electronic tuning circuits, precise tuning circuits, active sensor networks, electronic communications, remote controls, flexible electronics, etc.

Graphene Tribotronics for Electronic Skin and Touch Screen Applications

Graphene tribotronics is introduced for touch-sensing applications such as electronic skins and touch screens. The devices are based on a coplanar coupling of triboelectrification and current transport in graphene transistors. The touch sensors are ultrasensitive, fast, and stable. Furthermore, they are transparent and flexible, and can spatially map touch stimuli such as movement of a ball, multi-touch, etc.

Tribotronic Transistor Array as an Active Tactile Sensing System

Large-scale tactile sensor arrays are of great importance in flexible electronics, human-robot interaction, and medical monitoring. In this paper, a flexible 10 × 10 tribotronic transistor array (TTA) is developed as an active tactile sensing system by incorporating field-effect transistor units and triboelectric nanogenerators into a polyimide substrate. The drain-source current of each tribotronic transistor can be individually modulated by the corresponding external contact, which has induced a local electrostatic potential to act as the conventional gate voltage. By scaling down the pixel size from 5 × 5 to 0.5 × 0.5 mm², the sensitivities of single pixels are systematically investigated. The pixels of the TTA show excellent durability, independence, and synchronicity, which are suitable for applications in real-time tactile sensing, motion monitoring, and spatial mapping. The integrated tribotronics provides an unconventional route to realize an active tactile sensing system, with prospective applications in wearable electronics, human-machine interfaces, fingerprint identification, and so on.

Tribotronic Enhanced Photoresponsivity of a MoS2 Phototransistor

Molybdenum disulfide (MoS₂) has attracted a great attention as an excellent 2D material for future optoelectronic devices. Here, a novel MoS₂ tribotronic phototransistor is developed by a conjunction of a MoS₂ phototransistor and a triboelectric nanogenerator (TENG) in sliding mode. When an external friction layer produces a relative sliding on the device, the induced positive charges on the back gate of the MoS₂ phototransistor act as a "gate" to increase the channel conductivity as the traditional back gate voltage does. With the sliding distance increases, the photoresponsivity of the device is drastically enhanced from 221.0 to 727.8 A W^-1 at the 100 mW cm^-2 UV excitation intensity and 1 V bias voltage. This work has extended the emerging tribotronics to the field of photodetection based on 2D material, and demonstrated a new way to realize the adjustable photoelectric devices with high photoresponsivity via human interfacing.

Theoretical Study of Triboelectric-Potential Gated/Driven Metal-Oxide-Semiconductor Field-Effect Transistor

Triboelectric nanogenerator has drawn considerable attentions as a potential candidate for harvesting mechanical energies in our daily life. By utilizing the triboelectric potential generated through the coupling of contact electrification and electrostatic induction, the "tribotronics" has been introduced to tune/control the charge carrier transport behavior of silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET). Here, we perform a theoretical study of the performances of tribotronic MOSFET gated by triboelectric potential in two working modes through finite element analysis. The drain-source current dependence on contact-electrification generated triboelectric charges, gap separation distance, and externally applied bias are investigated. The in-depth physical mechanism of the tribotronic MOSFET operations is thoroughly illustrated by calculating and analyzing the charge transfer process, voltage relationship to gap separation distance, and electric potential distribution. Moreover, a tribotronic MOSFET working concept is proposed, simulated and studied for performing self-powered FET and logic operations. This work provides a deep understanding of working mechanisms and design guidance of tribotronic MOSFET for potential applications in micro/nanoelectromechanical systems (MEMS/NEMS), human-machine interface, flexible electronics, and self-powered active sensors.

Flexible Organic Tribotronic Transistor Memory for a Visible and Wearable Touch Monitoring System

A new type of flexible organic tribotronic transistor memory is proposed, which can be written and erased by externally applied touch actions as an active memory. By further coupling with an organic light-emitting diode (OLED), a visible and wearable touch monitoring system is achieved, in which touch triggering can be memorized and shown as the emission from the OLED.

Removal of Particulate Matter Emissions from a Vehicle Using a Self-Powered Triboelectric Filter

Particulate matter (PM) pollution from automobile exhaust has become one of the main pollution sources in urban environments. Although the diesel particulate filter has been used in heavy diesel vehicles, there is no particulate filter for most gasoline cars or light-duty vehicles because of high cost. Here, we introduce a self-powered triboelectric filter for removing PMs from automobile exhaust fumes using the triboelectrification effect. The finite element simulation reveals that the collision or friction between PTFE pellets and electrodes can generate large triboelectric charges and form a space electric field as high as 12 MV/m, accompanying an open-circuit voltage of ∼6 kV between the two electrodes, which is comparable to the measured value of 3 kV. By controlling the vibration frequency and fill ratio of pellets, more than 94% PMs in aerosol can be removed using the high electric field in the triboelectric filter. In real automobile exhaust fumes, the triboelectic filter has a mass collection efficiency of ∼95.5% for PM2.5 using self-vibration of the tailpipe.

Triboelectric Nanogenerators as a Self-Powered 3D Acceleration Sensor

A novel self-powered acceleration sensor based on triboelectric nanogenerator is proposed, which consists of an outer transparent shell and an inner mass-spring-damper mechanical system. The PTFE films on the mass surfaces can slide between two aluminum electrodes on an inner wall owing to the acceleration in the axis direction. On the basis of the coupling of triboelectric and electrostatic effects, the potential difference between the two aluminum electrodes is generated in proportion to the mass displacement, which can be used to characterize the acceleration in the axis direction with a detection range from about 13.0 to 40.0 m/s(2) at a sensitivity of 0.289 V·s(2)/m. With the integration of acceleration sensors in three axes, a self-powered 3D acceleration sensor is developed for vector acceleration measurement in any direction. The self-powered 3D acceleration sensor has excellent performance in the stability test, and the output voltages have a little decrease of ∼6% after 4000 cycles. Moreover, the self-powered acceleration sensor can be used to measure high collision acceleration, which has potential practicability in automobile security systems.

Tribotronic Logic Circuits and Basic Operations

A tribotronic logic device is fabricated to convert external mechanical stimuli into logic level signals, and tribotronic logic circuits such as NOT, AND, OR, NAND, NOR, XOR, and XNOR gates are demonstrated for performing mechanical-electrical coupled tribotronic logic operations, which realize the direct interaction between the external environment and the current silicon integrated circuits.

Active micro-actuators for optical modulation based on a planar sliding triboelectric nanogenerator

Based on a triboelectric nanogenerator (TENG), the first active micro-actuator for optical modulation driven by mechanical energy without external power or mechanical joint is presented. This demonstrates the enormous potential of TENGs for independent and sustainable self-powered micro/nano electromechanical systems, and opens up new -applications of TENGs in triboelectric-voltage-controlled devices.