Graphene oxide as a promising hole injection layer for MoS₂-based electronic devices

Electrical field and biaxial strain tunable electronic properties of the PtSe2/Hf2CO2 heterostructure

The structure and electronic properties of two-dimensional vertical van der Waals PtSe2/Hf2CO2 heterostructure have been investigated based on first-principles calculations. The results show that the PtSe2 and Hf2CO2 monolayers form a type-I heterostructure with both the conduction band minimum (CBM) and valence band maximum (VBM) located at the Hf2CO2 layer. The electronic properties of PtSe2/Hf2CO2 heterostructure can be effectively adjusted by applying external electric field or biaxial strain. The transition in band alignment from type-I to type-II can be manipulated by controlling the strength and direction of the electric field. Additionally, the transition from type-I to type-II have also taken place under the strains, and the band gap of the PtSe2/Hf2CO2 heterostructure decreases with increasing the compressive or tensible strain. Under a strong strain of -8%, the PtSe2/Hf2CO2 heterostructure can transform from semiconductor to metal. These findings provide a promising method to tune the electronic properties of PtSe2/Hf2CO2 heterostructure and design a new vdW heterostructure in the applications for electronic and optoelectronic devices.

Optoelectronic properties and strain regulation of the 2D WS2/ZnO van der Waals heterostructure

The combination of zinc oxide (ZnO) and transition metal dichalcogenide (TMD) nanoparticles has higher photocatalytic efficiency and field emission performance than TMDs or ZnO, as well as significantly higher water cracking photocatalytic activity. By first-principles calculation, we investigated the structural and optoelectronic properties of the two-dimensional (2D) WS₂/ZnO van der Waals (vdWs) heterostructure, and the regulation effect of biaxial strain. It is revealed that the conduction-band minimum (CBM) is lower than the reduction potential of water (EH⁺_/H2 ≈ −4.44 eV), and the valence-band maximum (VBM) is lower than the oxidation potential (E_O2/H2O ≈ −5.67 eV), thus the heterostructure is a good oxidant in the water decomposition process, but cannot match the requirements for water reduction. By applying a −2% biaxial strain, the CBM is elevated to a position higher than the reduction potential of water, then the 2D vdWs WS₂/ZnO heterostructure becomes a good material for the application of water reduction and other photovoltaic and photocatalytic devices.

2D WS₂/ZnO vdWs heterostructure becomes a good material for water-splitting applications after a strain is applied.

Diode-Like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride

2D semiconductors such as monolayer molybdenum disulfide (MoS₂ ) are promising material candidates for next-generation nanoelectronics. However, there are fundamental challenges related to their metal-semiconductor (MS) contacts, which limit the performance potential for practical device applications. In this work, 2D monolayer hexagonal boron nitride (h-BN) is exploited as an ultrathin decorating layer to form a metal-insulator-semiconductor (MIS) contact, and an innovative device architecture is designed as a platform to reveal a novel diode-like selective enhancement of the carrier transport through the MIS contact. The contact resistance is significantly reduced when the electrons are transported from the semiconductor to the metal, but is barely affected when the electrons are transported oppositely. A concept of carrier collection barrier is proposed to interpret this intriguing phenomenon as well as a negative Schottky barrier height obtained from temperature-dependent measurements, and the critical role of the collection barrier at the drain end is shown for the overall transistor performance.

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) semiconductor with a multitude of interesting properties and promising device applications spanning all realms of electronics and optoelectronics. While possessing inherent advantages over conventional bulk semiconducting materials (such as Si, Ge and III-Vs) in terms of enabling ultra-short channel and, thus, energy efficient field-effect transistors (FETs), the mechanically flexible and transparent nature of MoS2 makes it even more attractive for use in ubiquitous flexible and transparent electronic systems. However, before the fascinating properties of MoS2 can be effectively harnessed and put to good use in practical and commercial applications, several important technological roadblocks pertaining to its contact, doping and mobility (µ) engineering must be overcome. This paper reviews the important technologically relevant properties of semiconducting 2D TMDCs followed by a discussion of the performance projections of, and the major engineering challenges that confront, 2D MoS2-based devices. Finally, this review provides a comprehensive overview of the various engineering solutions employed, thus far, to address the all-important issues of contact resistance (RC), controllable and area-selective doping, and charge carrier mobility enhancement in these devices. Several key experimental and theoretical results are cited to supplement the discussions and provide further insight.

Unravelling Some of the Structure-Property Relationships in Graphene Oxide at Low Degree of Oxidation

Graphene oxide (GO) is a versatile 2D material whose properties can be tuned by changing the type and concentration of oxygen-containing functional groups attached to its surface. However, a detailed knowledge of the dependence of the chemo/physical features of this material on its chemical composition is largely unknown. We combine classical molecular dynamics and density functional theory simulations to predict the structural and electronic properties of GO at low degree of oxidation and suggest a revision of the Lerf-Klinowski model. We find that layer deformation is larger for samples containing high concentrations of epoxy groups and that correspondingly the band gap increases. Targeted chemical modification of the GO surface appears to be an effective route to tailor the electronic properties of the monolayer for given applications. Our simulations also show that the chemical shift of the C-1s XPS peak allows one to unambiguously characterize GO composition, resolving the peak attribution  uncertainty often encountered in experiments.

Tuning the activity of the inert MoS2 surface via graphene oxide support doping towards chemical functionalization and hydrogen evolution: a density functional study

The basal plane of MoS₂ provides a promising platform for chemical functionalization and the hydrogen evolution reaction (HER); however, its practical utilization remains challenging due to the lack of active sites and its low conductivity. Herein, using first principles simulations, we first proposed a novel and effective strategy for significantly enhancing the activity of the inert MoS₂ surface using a graphene oxide (GO) support (MoS₂/GOs). The chemical bonding of the functional groups (CH₃ and NH₂) on the MoS₂-GO hybrid is stronger than that in freestanding MoS₂ or MoS₂-graphene. Upon increasing the oxygen group concentration or introducing N heteroatoms into the GO support, the stability of the chemically functionalized MoS₂ is improved. Furthermore, use of GOs to support pristine and defective MoS₂ with a S vacancy (S-MoS₂) can greatly promote the HER activity of the basal plane. The catalytic activity of S-MoS₂ is further enhanced by doping N into GOs; this results in a hydrogen adsorption free energy of almost zero (ΔG_H = ∼-0.014 eV). The coupling interaction with the GO substrate reduces the p-type Schottky barrier heights (SBH) of S-MoS₂ and modifies its electronic properties, which facilitate charge transfer between them. Our calculated results are consistent with the experimental observations. Thus, the present results open new avenues for the chemical functionalization of MoS₂-based nanosheets and HER catalysts.

A turn-on chemiluminescence biosensor for selective and sensitive detection of adenosine based on HKUST-1 and QDs-luminol-aptamer conjugates

In this work, HKUST-1 and QDs-luminol-aptamer conjugates were prepared. The QDs-luminol-aptamer conjugates can be adsorbed by graphene oxide through π-π conjugation. When the adenosine was added, the QDs-luminol-aptamer conjugates were released from magnetic graphene oxide (MGO), the chemiluminescent switch was turned on. It was reported that HKUST-1 can catalyze the chemiluminescence reaction of luminol-H₂O₂ system in an alkaline medium, and improve the chemiluminescence resonance energy transfer (CRET) between chemiluminescence and QDs indirectly. Thus, the adenosine can be detected sensitively. Based on this phenomenon, the excellent platform for detection of adenosine was established. Under the optimized conditions, the linear detection range for adenosine was 1.0 × 10^-12-2.2 × 10^-10 mol/L with a detection limit of 2.1 × 10^-13 mol/L. The proposed method was successfully used for adenosine detection in biological samples.

Modified MXene: promising electrode materials for constructing Ohmic contacts with MoS2for electronic device applications

Promising electrode materials for constructing Ohmic contact with MoS₂for electronic device application.

Controlling electronic properties of MoS2/graphene oxide heterojunctions for enhancing photocatalytic performance: the role of oxygen

The manipulation of the constituents of novel hetero-photocatalysts is an effective method for improving photocatalytic efficiency, but a theoretical understanding of the relationship between interlayer interaction and photocatalytic activity is still lacking.

Tuning the p-type Schottky barrier in 2D metal/semiconductor interface:boron-sheet on MoSe2, and WSe2

Van der Waals (vdW) metal/semiconductor heterostructures have been investigated through first-principles calculations. We have considered the recently synthesized borophene (Mannix et al 2015 Science 350 1513), and the planar boron sheets (S1 and S2) (Feng et al 2016 Nat. Chem. 8 563) as the 2D metal layer, and the transition metal dichalcogenides (TMDCs) MoSe₂, and WSe₂ as the semiconductor monolayer. We find that the energetic stability of those 2D metal/semiconductor heterojunctions is mostly ruled by the vdW interactions; however, chemical interactions also take place in borophene/TMDC. The electronic charge transfer at the metal/semiconductor interface has been mapped, where we find a a net charge transfer from the TMDCs to the boron sheets. Further electronic structure calculations reveal that the metal/semiconductor interfaces, composed by planar boron sheets S1 and S2, present a p-type Schottky barrier which can be tuned to a p-type ohmic contact by an external electric field.

Controlling the electronic and geometric structures of 2D insertions to realize high performance metal/insertion-MoS2 sandwich interfaces

Metal/insertion-MoS₂ sandwich interfaces are designed to reduce the Schottky barriers at metal-MoS₂ interfaces. The effects of geometric and electronic structures of two-dimensional (2D) insertion materials on the contact properties of metal/insertion-MoS₂ interfaces are comparatively studied by first-principles calculations. Regardless of the geometric and electronic structures of 2D insertion materials, Fermi level pinning effects and charge scattering at the metal/insertion-MoS₂ interface are weakened due to weak interactions between the insertion and MoS₂ layers, no gap states and negligible structural deformations for MoS₂ layers. The Schottky barriers at metal/insertion-MoS₂ interfaces are induced by three interface dipoles and four potential steps that are determined by the charge transfers and structural deformations of 2D insertion materials. The lower the electron affinities of 2D insertion materials, the more are the electrons lost from the Sc surface, resulting in lower n-type Schottky barriers at Sc/insertion-MoS₂ interfaces. The larger the ionization potentials and the thinner the thicknesses of 2D insertion materials, the fewer are the electrons that accumulate at the Pt surface, leading to lower p-type Schottky barriers at Pt/insertion-MoS₂ interfaces. All Sc/insertion-MoS₂ interfaces exhibited ohmic characters. The Pt/BN-MoS₂ interface exhibits the lowest p-type Schottky barrier of 0.52 eV due to the largest ionization potential (∼6.88 eV) and the thinnest thickness (single atomic layer thickness) of BN. These results in this work are beneficial to understand and design high performance metal/insertion-MoS₂ interfaces through 2D insertion materials.

Non-invasively improving the Schottky barriers of metal–MoS2interfaces: effects of atomic vacancies in a BN buffer layer

Using first-principles calculations within density functional theory, vacancies in the BN buffer layer have been predicted to improve the Schottky barrier of the metal–MoS₂interface without deteriorating the intrinsic properties of the MoS₂layer.

Band gap opening of bilayer graphene by graphene oxide support doping

In contrast to the metallic monolayer graphene by graphene oxides (GOs) doping, the sizable band gap of bilayer graphene is opened by GOs.

Modulating Electronic Properties of Monolayer MoS2 via Electron-Withdrawing Functional Groups of Graphene Oxide

Modulation of the carrier concentration and electronic type of monolayer (1L) MoS₂ is highly important for applications in logic circuits, solar cells, and light-emitting diodes. Here, we demonstrate the tuning of the electronic properties of large-area 1L-MoS₂ using graphene oxide (GO). GO sheets are well-known as hole injection layers since they contain electron-withdrawing groups such as carboxyl, hydroxyl, and epoxy. The optical and electronic properties of GO-treated 1L-MoS₂ are dramatically changed. The photoluminescence intensity of GO-treated 1L-MoS₂ is increases by more than 470% compared to the pristine sample because of the increase in neutral exciton contribution. In addition, the A_1g peak in Raman spectra shifts considerably, revealing that GO treatment led to the formation of p-type doped 1L-MoS₂. Moreover, the current vs voltage (I-V) curves of GO-coated 1L-MoS₂ field effect transistors show that the electron concentration of 1L-MoS₂ is significantly lower in comparison with pristine 1L-MoS₂. Current rectification is also observed from the I-V curve of the lateral diode structure with 1L-MoS₂ and 1L-MoS₂/GO, indicating that the electronic structure of MoS₂ is significantly modulated by the electron-withdrawing functional group of GO.

Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes

The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability, and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A(-1) and 98.2 lm W(-1), respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability.

Atom-Thin SnS2-xSex with Adjustable Compositions by Direct Liquid Exfoliation from Single Crystals

Two-dimensional (2D) chalcogenide materials are fundamentally and technologically fascinating for their suitable band gap energy and carrier type relevant to their adjustable composition, structure, and dimensionality. Here, we demonstrate the exfoliation of single-crystal SnS2-xSex (SSS) with S/Se vacancies into an atom-thin layer by simple sonication in ethanol without additive. The introduction of vacancies at the S/Se site, the conflicting atomic radius of sulfur in selenium layers, and easy incorporation with an ethanol molecule lead to high ion accessibility; therefore, atom-thin SSS flakes can be effectively prepared by exfoliating the single crystal via sonication. The in situ pyrolysis of such materials can further adjust their compositions, representing tunable activation energy, band gap, and also tunable response to analytes of such materials. As the most basic and crucial step of the 2D material field, the successful synthesis of an uncontaminated and atom-thin sample will further push ahead the large-scale applications of 2D materials, including, but not limited to, electronics, sensing, catalysis, and energy storage fields.

Does p-type ohmic contact exist in WSe2-metal interfaces?

Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.

Laser-induced chemical transformation of free-standing graphene oxide membranes in liquid and gas ammonia environments

A fast and versatile method is developed for laser-induced reduction and nitrogen doping of free-standing graphene oxide membranes.

Fabrication and surface stochastic analysis of enhanced photoelectrochemical activity of a tuneable MoS2–CdS thin film heterojunction

CdS/MoS₂(t)/ITO thin films were prepared via a facile method with controllable surface properties, and a model was proposed to describe the enhancement of photoelectrochemical activity from a stochastic view point.

Modulation of Electronic Structure of Armchair MoS2 Nanoribbon

We perform first-principles calculations on electronic structures of armchair MoS2 nanoribbons (AMoS2NRs) passivated by non-metal atoms. In contrast to bare AMoS2NR (AMoS2NR-bare) or purely hydrogen (H) edge-terminated AMoS2NR (AMoS2NR-H), it is found that H and oxygen (O) hybrid edge-terminated AMoS2NR (AMoS2NR-H-O) is more stable. AMoS2NR-H-O exhibits a direct band gap of about 1.43 eV, which is larger than those of pristine AMoS2NR (about 0.61 eV) and AMoS2NR-H (about 0.60 eV), and even exceeds the band gap of bulk MoS2 (about 0.86 eV) and is close to that of monolayer MoS2 (about 1.67 eV). The remarkable band gap of AMoS2NR-H-O is attributed to the charge redistribution on the edge atoms of MoS2 nanoribbon, especially the charges on the edge Mo atoms. Detailed calculations of AMoS2NR-H-O reveal that over 70% of the total density of states (DOS) of the conduction band minimum and the valence band maximum are contributed by the Mo atoms. In particular, edge Mo atoms play a crucial role in modulating the electronic structure. In addition, we have studied a series of functionalized AMoS2NR-H-X with X = S, F, C, N, and P, respectively. It is found that AMoS2NR-H-X with X = S, 2F, C possess remarkable electronic band gaps, while AMoS2NR-H-X with X = F, N, P are metallic. Our studies suggest that non-metal atom hybrid passivation can efficiently tune the electronic band gap of MoS2 nanoribbon and open a new route to obtain MoS2 based practical nanoelectronic device and photo¬voltaic device.

Synthesis, properties and applications of 2D non-graphene materials

As an emerging class of new materials, two-dimensional (2D) non-graphene materials, including layered and non-layered, and their heterostructures are currently attracting increasing interest due to their promising applications in electronics, optoelectronics and clean energy. In contrast to traditional semiconductors, such as Si, Ge and III-V group materials, 2D materials show significant merits of ultrathin thickness, very high surface-to-volume ratio, and high compatibility with flexible devices. Owing to these unique properties, while scaling down to ultrathin thickness, devices based on these materials as well as artificially synthetic heterostructures exhibit novel and surprising functions and performances. In this review, we aim to provide a summary on the state-of-the-art research activities on 2D non-graphene materials. The scope of the review will cover the preparation of layered and non-layered 2D materials, construction of 2D vertical van der Waals and lateral ultrathin heterostructures, and especially focus on the applications in electronics, optoelectronics and clean energy. Moreover, the review is concluded with some perspectives on the future developments in this field.

Vertical and Bidirectional Heterostructures from Graphyne and MSe2 (M = Mo, W)

Vertical and lateral heterostructures with atomically clean and sharp interfaces have opened up new realms in materials science, device physics and engineering. Herein, inspired by recent experiments, the unprecedented bidirectional heterostructures (BDHs) of γ-graphyne@MoSe2/WSe2 as well as γ-graphyne@MoSe2 and γ-graphyne@WSe2 are proposed and examined on the basis of first-principles calculations. Our results reveal that a novel wrinkled γ-graphyne with narrowed energy gap and strong binding strength is achieved on the planar and smooth substrate in γ-graphyne@MoSe2/WSe2. The direct-indirect band gap crossover is also found in terms of interlayer coupling. Furthermore, we demonstrate that electron-hole pairs can be spatially separated, and the carrier mobility would be benefited from the absorbed γ-graphyne in the BDHs. These results provide not only new insights into the physical and chemical properties of the vertical and bidirectional heterostructures, but also a new strategy for fabricating unprecedented 2D nanomaterials with exciting properties.

Fluorographane: a promising material for bipolar doping of MoS2

Using first principles calculations we show that one can realize vanishing n-type/p-type Schottky barrier heights when contacting MoS₂ to fluorographane.

Realizing semiconductor to metal transition in graphitic ZnO and MoS2 nanocomposite with external electric field

The graphitic ZnO and MoS₂ heterostructures realize the semiconducting to metallic behavior transitions under external electric field.