1
|
Bidoul N, Roisin N, Flandre D. Tuning the Intrinsic Stochasticity of Resistive Switching in VO 2 Microresistors. NANO LETTERS 2024; 24:6201-6209. [PMID: 38757925 DOI: 10.1021/acs.nanolett.4c00184] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Vanadium dioxide (VO2) microresistors exhibit resistive switching above a certain threshold voltage, allowing them to emulate neurons in neuromorphic systems. However, such devices present intrinsic cycle-to-cycle variations in their resistances and threshold voltages, which can be detrimental or beneficial, depending on their use. Here, we study this stochasticity in VO2 microresistors with various grain sizes and dimensions, through high-resolution electrical and optical measurements across numerous cycles. Our results highlight that the cycle-to-cycle variations in threshold voltage increase as the grain size becomes comparable to the device dimensions. We also present observations of multimodal threshold voltage distributions in the smaller-length resistors. To understand the underlying phenomenon, we investigate the relationship between the device insulating resistance and threshold voltage distributions, showing that these modes could correspond to distinct percolation paths and filaments. Our findings provide the first experimentally verified guidelines for designing VO2 devices with minimized/maximized stochasticity, depending on the targeted application.
Collapse
Affiliation(s)
- Noémie Bidoul
- Institute for Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), UCLouvain, Louvain-la-Neuve 1348, Belgium
| | - Nicolas Roisin
- Institute for Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), UCLouvain, Louvain-la-Neuve 1348, Belgium
| | - Denis Flandre
- Institute for Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), UCLouvain, Louvain-la-Neuve 1348, Belgium
| |
Collapse
|
2
|
Wan C, Pei M, Shi K, Cui H, Long H, Qiao L, Xing Q, Wan Q. Toward a Brain-Neuromorphics Interface. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2311288. [PMID: 38339866 DOI: 10.1002/adma.202311288] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/27/2023] [Revised: 01/17/2024] [Indexed: 02/12/2024]
Abstract
Brain-computer interfaces (BCIs) that enable human-machine interaction have immense potential in restoring or augmenting human capabilities. Traditional BCIs are realized based on complementary metal-oxide-semiconductor (CMOS) technologies with complex, bulky, and low biocompatible circuits, and suffer with the low energy efficiency of the von Neumann architecture. The brain-neuromorphics interface (BNI) would offer a promising solution to advance the BCI technologies and shape the interactions with machineries. Neuromorphic devices and systems are able to provide substantial computation power with extremely high energy-efficiency by implementing in-materia computing such as in situ vector-matrix multiplication (VMM) and physical reservoir computing. Recent progresses on integrating neuromorphic components with sensing and/or actuating modules, give birth to the neuromorphic afferent nerve, efferent nerve, sensorimotor loop, and so on, which has advanced the technologies for future neurorobotics by achieving sophisticated sensorimotor capabilities as the biological system. With the development on the compact artificial spiking neuron and bioelectronic interfaces, the seamless communication between a BNI and a bioentity is reasonably expectable. In this review, the upcoming BNIs are profiled by introducing the brief history of neuromorphics, reviewing the recent progresses on related areas, and discussing the future advances and challenges that lie ahead.
Collapse
Affiliation(s)
- Changjin Wan
- Yongjiang Laboratory (Y-LAB), Ningbo, Zhejiang, 315202, China
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Mengjiao Pei
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Kailu Shi
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Hangyuan Cui
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Haotian Long
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Lesheng Qiao
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Qianye Xing
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Qing Wan
- Yongjiang Laboratory (Y-LAB), Ningbo, Zhejiang, 315202, China
- School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| |
Collapse
|
3
|
Qaderi F, Rosca T, Burla M, Leuthold J, Flandre D, Ionescu AM. Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO 2. COMMUNICATIONS MATERIALS 2023; 4:34. [PMID: 38665394 PMCID: PMC11041681 DOI: 10.1038/s43246-023-00350-x] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/06/2022] [Accepted: 03/21/2023] [Indexed: 04/28/2024]
Abstract
In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-metal transition threshold voltage to the incident wave. The detection concept is demonstrated through actuation of biased VO2 switches encapsulated in a pair of coupled antennas by interrupting coplanar waveguides for broadband measurements, on silicon substrates. Ultimately, we propose an electromagnetic-wave-sensitive voltage-controlled spike generator based on VO2 switches in an astable spiking circuit. The fabricated sensors show responsivities of around 66.3 MHz.W-1 at 1 μW, with a low noise equivalent power of 5 nW.Hz-0.5 at room temperature, for a footprint of 2.5 × 10-5 mm2. The responsivity in static characterizations is 76 kV.W-1. Based on experimental statistical data measured on robust fabricated devices, we discuss stochastic behavior and noise limits of VO2 -based spiking sensors applicable for wave power sensing in mm-wave and sub-terahertz range.
Collapse
Affiliation(s)
- Fatemeh Qaderi
- Nanoelectronic devices laboratory (Nanolab), Department of Electrical Engineering, École polytechnique fédérale de Lausanne (EPFL), EPFL STI IEL NANOLAB, ELB 335, Station 11, Lausanne, 1015 Switzerland
| | - Teodor Rosca
- Nanoelectronic devices laboratory (Nanolab), Department of Electrical Engineering, École polytechnique fédérale de Lausanne (EPFL), EPFL STI IEL NANOLAB, ELB 335, Station 11, Lausanne, 1015 Switzerland
| | - Maurizio Burla
- Institute of Electromagnetic Fields (IEF), Eidgenössische Technische Hochschule Zürich (ETHZ), ETZ K 82, Gloriastrasse 35, Zürich, 8092 Switzerland
| | - Juerg Leuthold
- Institute of Electromagnetic Fields (IEF), Eidgenössische Technische Hochschule Zürich (ETHZ), ETZ K 82, Gloriastrasse 35, Zürich, 8092 Switzerland
| | - Denis Flandre
- ICTEAM, Ecole Polytechnique de Louvain (UCLouvain), ELEN, Place du Levant 3/L5.03.02, Louvain-la-Neuve, 1348 Belgium
| | - Adrian M. Ionescu
- Nanoelectronic devices laboratory (Nanolab), Department of Electrical Engineering, École polytechnique fédérale de Lausanne (EPFL), EPFL STI IEL NANOLAB, ELB 335, Station 11, Lausanne, 1015 Switzerland
| |
Collapse
|
4
|
Embedded metallic nanoparticles facilitate metastability of switchable metallic domains in Mott threshold switches. Nat Commun 2022; 13:4609. [PMID: 35948541 PMCID: PMC9365788 DOI: 10.1038/s41467-022-32081-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2021] [Accepted: 07/14/2022] [Indexed: 11/09/2022] Open
Abstract
Mott threshold switching, which is observed in quantum materials featuring an electrically fired insulator-to-metal transition, calls for delicate control of the percolative dynamics of electrically switchable domains on a nanoscale. Here, we demonstrate that embedded metallic nanoparticles (NP) dramatically promote metastability of switchable metallic domains in single-crystal-like VO2 Mott switches. Using a model system of Pt-NP-VO2 single-crystal-like films, interestingly, the embedded Pt NPs provide 33.3 times longer ‘memory’ of previous threshold metallic conduction by serving as pre-formed ‘stepping-stones’ in the switchable VO2 matrix by consecutive electical pulse measurement; persistent memory of previous firing during the application of sub-threshold pulses was achieved on a six orders of magnitude longer timescale than the single-pulse recovery time of the insulating resistance in Pt-NP-VO2 Mott switches. This discovery offers a fundamental strategy to exploit the geometric evolution of switchable domains in electrically fired transition and potential applications for non-Boolean computing using quantum materials. Control of percolative dynamics of metal and insulator domains during electrically triggered insulator-metal transition underlies applications in energy-efficient switches. Jo et al. show that embedded metallic nanoparticles enhance the metastability and memory effects of metallic domains in VO2 switches.
Collapse
|
5
|
Voltage Pulse Driven VO2 Volatile Resistive Transition Devices as Leaky Integrate-and-Fire Artificial Neurons. ELECTRONICS 2022. [DOI: 10.3390/electronics11040516] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
In a hardware-based neuromorphic computation system, using emerging nonvolatile memory devices as artificial synapses, which have an inelastic memory characteristic, has attracted considerable interest. In contrast, the elastic artificial neurons have received much less attention. An ideal material system that is suitable for mimicking biological neurons is the one with volatile (or mono-stable) resistive change property. Vanadium dioxide (VO2) is a well-known material that exhibits an abrupt and volatile insulator-to-metal transition property. In this work, we experimentally demonstrate that pulse-driven two-terminal VO2 devices behave in a leaky integrate-and-fire (LIF) manner, and they elastically relax back to their initial value after firing, thus, mimicking the behavior of biological neurons. The VO2 device with a channel length of 20 µm can be driven to fire by a single long-duration pulse (>83 µs) or multiple short-duration pulses. We further model the VO2 devices as resistive networks based on their granular domain structure, with resistivities corresponding to the insulator or metallic states. Simulation results confirm that the volatile resistive transition under voltage pulse driving is caused by the formation of a metallic filament in an avalanche-like process, while this volatile metallic filament will relax back to the insulating state at the end of driving pulses. The simulation offers a microscopic view of the dynamic and abrupt filament formation process to explain the experimentally observed LIF behavior. These results suggest that VO2 insulator–metal transition could be exploited for artificial neurons.
Collapse
|
6
|
Vaidya J, Kanthi RSS, Alam S, Amin N, Aziz A, Shukla N. A three-terminal non-volatile ferroelectric switch with an insulator-metal transition channel. Sci Rep 2022; 12:2199. [PMID: 35140259 PMCID: PMC8828903 DOI: 10.1038/s41598-021-03560-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/26/2021] [Accepted: 11/22/2021] [Indexed: 11/09/2022] Open
Abstract
Ferroelectrics offer a promising material platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET operation entails a fundamental trade-off between the read and the program operations. To overcome this trade-off, we propose in this work, a novel device concept, Mott-FeFET, that aims to replace the Silicon channel of the FeFET with VO2- a material that exhibits an electrically driven insulator-metal phase transition. The Mott-FeFET design, which demonstrates a (ferroelectric) polarization-dependent threshold voltage, enables the read current distinguishability (i.e., the ratio of current sensed when the Mott-FeFET is in state 1 and 0, respectively) to be independent of the program voltage. This enables the device to be programmed at low voltages without affecting the ability to sense/read the state of the device. Our work provides a pathway to realize low-voltage and energy-efficient non-volatile memory solutions.
Collapse
Affiliation(s)
- Jaykumar Vaidya
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - R S Surya Kanthi
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Shamiul Alam
- Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN, 37996, USA
| | - Nazmul Amin
- Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN, 37996, USA
| | - Ahmedullah Aziz
- Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN, 37996, USA
| | - Nikhil Shukla
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904, USA.
| |
Collapse
|
7
|
Salev P, Fratino L, Sasaki D, Berkoun R, Del Valle J, Kalcheim Y, Takamura Y, Rozenberg M, Schuller IK. Transverse barrier formation by electrical triggering of a metal-to-insulator transition. Nat Commun 2021; 12:5499. [PMID: 34535660 PMCID: PMC8448889 DOI: 10.1038/s41467-021-25802-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2020] [Accepted: 08/19/2021] [Indexed: 11/08/2022] Open
Abstract
Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of a conducting filament parallel to the current flow, is a highly active research topic. Using the magneto-optical Kerr imaging, we found that the opposite type of resistive switching, from a metal into an insulator, occurs in a reciprocal characteristic spatial pattern: the formation of an insulating barrier perpendicular to the driving current. This barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. We further demonstrate that electrically inducing a transverse barrier enables a unique approach to voltage-controlled magnetism. By triggering the metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism is achieved using a global voltage bias applied to the whole device.
Collapse
Affiliation(s)
- Pavel Salev
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, USA.
| | - Lorenzo Fratino
- Université Paris-Saclay, CNRS Laboratoire de Physique des Solides, 91405, Orsay, France
| | - Dayne Sasaki
- Department of Materials Science and Engineering, University of California Davis, Davis, CA, USA
| | - Rani Berkoun
- Université Paris-Saclay, CNRS Laboratoire de Physique des Solides, 91405, Orsay, France
| | - Javier Del Valle
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, USA
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
| | - Yoav Kalcheim
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, USA
- Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa, Israel
| | - Yayoi Takamura
- Department of Materials Science and Engineering, University of California Davis, Davis, CA, USA
| | - Marcelo Rozenberg
- Université Paris-Saclay, CNRS Laboratoire de Physique des Solides, 91405, Orsay, France
| | - Ivan K Schuller
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, USA
| |
Collapse
|
8
|
Del Valle J, Vargas NM, Rocco R, Salev P, Kalcheim Y, Lapa PN, Adda C, Lee MH, Wang PY, Fratino L, Rozenberg MJ, Schuller IK. Spatiotemporal characterization of the field-induced insulator-to-metal transition. Science 2021; 373:907-911. [PMID: 34301856 DOI: 10.1126/science.abd9088] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/20/2020] [Accepted: 07/08/2021] [Indexed: 12/14/2022]
Abstract
Many correlated systems feature an insulator-to-metal transition that can be triggered by an electric field. Although it is known that metallization takes place through filament formation, the details of how this process initiates and evolves remain elusive. We use in-operando optical reflectivity to capture the growth dynamics of the metallic phase with space and time resolution. We demonstrate that filament formation is triggered by nucleation at hotspots, with a subsequent expansion over several decades in time. By comparing three case studies (VO2, V3O5, and V2O3), we identify the resistivity change across the transition as the crucial parameter governing this process. Our results provide a spatiotemporal characterization of volatile resistive switching in Mott insulators, which is important for emerging technologies, such as optoelectronics and neuromorphic computing.
Collapse
Affiliation(s)
- Javier Del Valle
- Department of Material Science and Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel. .,Université Paris-Saclay, CNRS Laboratoire de Physique des Solides, 91405, Orsay, France.,Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093, USA.,Department of Quantum Matter Physics, University of Geneva, 1211 Geneva, Switzerland
| | - Nicolas M Vargas
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093, USA
| | - Rodolfo Rocco
- Université Paris-Saclay, CNRS Laboratoire de Physique des Solides, 91405, Orsay, France.,Materials Science and Engineering Program, University of California San Diego, La Jolla, CA 92093, USA.,Université Paris-Saclay, CNRS Laboratoire de Physique des Solides, 91405, Orsay, France
| | - Pavel Salev
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093, USA
| | - Yoav Kalcheim
- Department of Quantum Matter Physics, University of Geneva, 1211 Geneva, Switzerland.,Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093, USA.,Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093, USA.,Department of Material Science and Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel
| | - Pavel N Lapa
- Department of Quantum Matter Physics, University of Geneva, 1211 Geneva, Switzerland.,Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093, USA
| | - Coline Adda
- Department of Material Science and Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel.,Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093, USA
| | - Min-Han Lee
- Department of Quantum Matter Physics, University of Geneva, 1211 Geneva, Switzerland.,Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093, USA.,Materials Science and Engineering Program, University of California San Diego, La Jolla, CA 92093, USA
| | - Paul Y Wang
- Department of Material Science and Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel.,Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093, USA
| | - Lorenzo Fratino
- Materials Science and Engineering Program, University of California San Diego, La Jolla, CA 92093, USA.,Université Paris-Saclay, CNRS Laboratoire de Physique des Solides, 91405, Orsay, France
| | - Marcelo J Rozenberg
- Materials Science and Engineering Program, University of California San Diego, La Jolla, CA 92093, USA.,Université Paris-Saclay, CNRS Laboratoire de Physique des Solides, 91405, Orsay, France
| | - Ivan K Schuller
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093, USA
| |
Collapse
|
9
|
Hong S, Lee M, Lee MW, Kim D. Sharp Phase Transition by the Enhanced Lattice Stability of Low‐Temperature Phase of Cr‐Doped
VO
2
. B KOREAN CHEM SOC 2021. [DOI: 10.1002/bkcs.12353] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Seong‐Cheol Hong
- Department of Chemistry Pukyong National University, 45 Yongso‐ro, Nam‐gu Busan 48513 Republic of Korea
| | - Myeongsoon Lee
- Department of Chemistry Pukyong National University, 45 Yongso‐ro, Nam‐gu Busan 48513 Republic of Korea
| | - Myung Won Lee
- Department of Chemistry Pukyong National University, 45 Yongso‐ro, Nam‐gu Busan 48513 Republic of Korea
| | - Don Kim
- Department of Chemistry Pukyong National University, 45 Yongso‐ro, Nam‐gu Busan 48513 Republic of Korea
| |
Collapse
|
10
|
Oh S, Shi Y, Del Valle J, Salev P, Lu Y, Huang Z, Kalcheim Y, Schuller IK, Kuzum D. Energy-efficient Mott activation neuron for full-hardware implementation of neural networks. NATURE NANOTECHNOLOGY 2021; 16:680-687. [PMID: 33737724 PMCID: PMC8627686 DOI: 10.1038/s41565-021-00874-8] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2020] [Accepted: 02/02/2021] [Indexed: 05/09/2023]
Abstract
To circumvent the von Neumann bottleneck, substantial progress has been made towards in-memory computing with synaptic devices. However, compact nanodevices implementing non-linear activation functions are required for efficient full-hardware implementation of deep neural networks. Here, we present an energy-efficient and compact Mott activation neuron based on vanadium dioxide and its successful integration with a conductive bridge random access memory (CBRAM) crossbar array in hardware. The Mott activation neuron implements the rectified linear unit function in the analogue domain. The neuron devices consume substantially less energy and occupy two orders of magnitude smaller area than those of analogue complementary metal-oxide semiconductor implementations. The LeNet-5 network with Mott activation neurons achieves 98.38% accuracy on the MNIST dataset, close to the ideal software accuracy. We perform large-scale image edge detection using the Mott activation neurons integrated with a CBRAM crossbar array. Our findings provide a solution towards large-scale, highly parallel and energy-efficient in-memory computing systems for neural networks.
Collapse
Affiliation(s)
- Sangheon Oh
- Electrical and Computer Engineering Department, University of California San Diego, La Jolla, CA, USA
| | - Yuhan Shi
- Electrical and Computer Engineering Department, University of California San Diego, La Jolla, CA, USA
| | - Javier Del Valle
- Department of Physics, University of California San Diego, La Jolla, CA, USA
| | - Pavel Salev
- Department of Physics, University of California San Diego, La Jolla, CA, USA
| | - Yichen Lu
- Electrical and Computer Engineering Department, University of California San Diego, La Jolla, CA, USA
| | - Zhisheng Huang
- Electrical and Computer Engineering Department, University of California San Diego, La Jolla, CA, USA
| | - Yoav Kalcheim
- Department of Physics, University of California San Diego, La Jolla, CA, USA
| | - Ivan K Schuller
- Department of Physics, University of California San Diego, La Jolla, CA, USA
| | - Duygu Kuzum
- Electrical and Computer Engineering Department, University of California San Diego, La Jolla, CA, USA.
| |
Collapse
|
11
|
Operando characterization of conductive filaments during resistive switching in Mott VO 2. Proc Natl Acad Sci U S A 2021; 118:2013676118. [PMID: 33622788 DOI: 10.1073/pnas.2013676118] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Vanadium dioxide (VO2) has attracted much attention owing to its metal-insulator transition near room temperature and the ability to induce volatile resistive switching, a key feature for developing novel hardware for neuromorphic computing. Despite this interest, the mechanisms for nonvolatile switching functioning as synapse in this oxide remain not understood. In this work, we use in situ transmission electron microscopy, electrical transport measurements, and numerical simulations on Au/VO2/Ge vertical devices to study the electroforming process. We have observed the formation of V5O9 conductive filaments with a pronounced metal-insulator transition and that vacancy diffusion can erase the filament, allowing for the system to "forget." Thus, both volatile and nonvolatile switching can be achieved in VO2, useful to emulate neuronal and synaptic behaviors, respectively. Our systematic operando study of the filament provides a more comprehensive understanding of resistive switching, key in the development of resistive switching-based neuromorphic computing.
Collapse
|
12
|
Shabalin AG, Del Valle J, Hua N, Cherukara MJ, Holt MV, Schuller IK, Shpyrko OG. Nanoscale Imaging and Control of Volatile and Non-Volatile Resistive Switching in VO 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2005439. [PMID: 33230936 DOI: 10.1002/smll.202005439] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2020] [Revised: 10/26/2020] [Indexed: 06/11/2023]
Abstract
Control of the metal-insulator phase transition is vital for emerging neuromorphic and memristive technologies. The ability to alter the electrically driven transition between volatile and non-volatile states is particularly important for quantum-materials-based emulation of neurons and synapses. The major challenge of this implementation is to understand and control the nanoscale mechanisms behind these two fundamental switching modalities. Here, in situ X-ray nanoimaging is used to follow the evolution of the nanostructure and disorder in the archetypal Mott insulator VO2 during an electrically driven transition. Our findings demonstrate selective and reversible stabilization of either the insulating or metallic phases achieved by manipulating the defect concentration. This mechanism enables us to alter the local switching response between volatile and persistent regimes and demonstrates a new possibility for nanoscale control of the resistive switching in Mott materials.
Collapse
Affiliation(s)
- Anatoly G Shabalin
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
| | - Javier Del Valle
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
| | - Nelson Hua
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
| | - Mathew J Cherukara
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Martin V Holt
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Ivan K Schuller
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
| | - Oleg G Shpyrko
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
| |
Collapse
|
13
|
Galicia-Hernandez JM, Turkowski V, Hernandez-Cocoletzi G, Rahman TS. Electron correlations and memory effects in ultrafast electron and hole dynamics in VO 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:20LT01. [PMID: 31978897 DOI: 10.1088/1361-648x/ab6f85] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
By applying an approach based on time-dependent density functional theory and dynamical mean-field theory (TDDFT+DMFT) we examine the role of electron correlations in the ultrafast breakdown of the insulating M1 phase in bulk VO2. We consider the case of a spatially homogeneous ultrafast (femtosecond) laser pulse perturbation and present the dynamics of the melting of the insulating state, in particular the time-dependence of the excited charge density. The time-dependence of the chemical potential of the excited electron and hole subsystems shows that even for such short times the dynamics of the system is significantly affected by memory effects-the time-resolved electron-electron interactions. The results pave the way for obtaining a microscopic understanding of the ultrafast dynamics of strongly-correlated materials.
Collapse
Affiliation(s)
- Jose Mario Galicia-Hernandez
- Department of Physics, University of Central Florida, Orlando, FL 32816, United States of America. Instituto de Fisica Ing. Luis Rivera Terrazas, Benemerita Universidad Autonoma de Puebla, Puebla 72550, Mexico
| | | | | | | |
Collapse
|
14
|
Hong S, Lee M, Kim D. An Invariable Temperature during the Phase Transition of W Doped VO
2
Film. B KOREAN CHEM SOC 2020. [DOI: 10.1002/bkcs.11975] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Seong‐Cheol Hong
- Department of ChemistryPukyong National University Busan 48513 South Korea
| | - Myeongsoon Lee
- Department of ChemistryPukyong National University Busan 48513 South Korea
| | - Don Kim
- Department of ChemistryPukyong National University Busan 48513 South Korea
| |
Collapse
|
15
|
Zhou X, Gu D, Li Y, Qin H, Jiang Y, Xu J. A high performance electroformed single-crystallite VO 2 threshold switch. NANOSCALE 2019; 11:22070-22078. [PMID: 31720651 DOI: 10.1039/c9nr08364b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Threshold switches (TSs) are an effective approach for resolving the sneak path problem within a memristor array. VO2 is a promising material for fabricating high-performance TSs. Here we report a single crystal VO2-based TS device with high switching performance. The single crystal monoclinic VO2 channel is obtained by electroforming in a composite vanadium oxide film consisting of VO2, V2O5 and V3O7. The formation mechanism on single crystal VO2 is thoroughly investigated by means of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The single crystal VO2-based TS device exhibits better switching performance than the polycrystalline monoclinic VO2 counterpart. The TS device based on a single crystal channel with the (2[combining macron]11) orientation exhibits a steep turn-on voltage slope of <0.5 mV dec-1, a fast switching speed of 23 ns, an excellent endurance over 109 cycles, a high Ion/Ioff ratio of 143 and a low sample-to-sample variance. The enhanced switching performance originates from the single crystal feature and specified crystal orientation.
Collapse
Affiliation(s)
- Xin Zhou
- School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China.
| | - Deen Gu
- School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China.
| | - Yatao Li
- School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China.
| | - Haoxin Qin
- School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China.
| | - Yadong Jiang
- School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China.
| | - Jimmy Xu
- School of Engineering, Brown University, 184 Hope Street, Providence, Rhode Island 02912, USA
| |
Collapse
|
16
|
|
17
|
Lee M, Kim D. The Control of Transition Behavior of VO2
Film Deposited on Sapphire (0001) Substrate by the Organic Polymer-Assisted Thermal Deposition. B KOREAN CHEM SOC 2018. [DOI: 10.1002/bkcs.11388] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Myeongsoon Lee
- Department of Chemistry; Pukyong National University; Busan 48513 Korea
| | - Don Kim
- Department of Chemistry; Pukyong National University; Busan 48513 Korea
| |
Collapse
|
18
|
Xue W, Liu G, Zhong Z, Dai Y, Shang J, Liu Y, Yang H, Yi X, Tan H, Pan L, Gao S, Ding J, Xu XH, Li RW. A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal-Insulator Transition. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1702162. [PMID: 28833612 DOI: 10.1002/adma.201702162] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2017] [Revised: 06/02/2017] [Indexed: 05/27/2023]
Abstract
Nanoscale manipulation of materials' physicochemical properties offers distinguished possibility to the development of novel electronic devices with ultrasmall dimension, fast operation speed, and low energy consumption characteristics. This is especially important as the present semiconductor manufacturing technique is approaching the end of miniaturization campaign in the near future. Here, a superior metal-insulator transition (MIT) of a 1D VO2 nanochannel constructed through an electric-field-induced oxygen ion migration process in V2 O5 thin film is reported for the first time. A sharp and reliable MIT transition with a steep turn-on voltage slope of <0.5 mV dec-1 , fast switching speed of 17 ns, low energy consumption of 8 pJ, and low variability of <4.3% is demonstrated in the VO2 nanochannel device. High-resolution transmission electron microscopy observation and theoretical computation verify that the superior electrical properties of the present device can be ascribed to the electroformation of nanoscale VO2 nanochannel in V2 O5 thin films. More importantly, the incorporation of the present device into a Pt/HfO2 /Pt/VO2 /Pt 1S1R unit can ensure the correct reading of the HfO2 memory continuously for 107 cycles, therefore demonstrating its great possibility as a reliable selector in high-density crossbar memory arrays.
Collapse
Affiliation(s)
- Wuhong Xue
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, Shanxi, 041004, China
| | - Gang Liu
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
| | - Yuehua Dai
- Institute of Electronic and Information Project, Anhui University, Hefei, Anhui, 230601, China
| | - Jie Shang
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
| | - Yiwei Liu
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
| | - Huali Yang
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
| | - Xiaohui Yi
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
| | - Hongwei Tan
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
| | - Liang Pan
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
| | - Shuang Gao
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
| | - Jun Ding
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 119260, Singapore
| | - Xiao-Hong Xu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, Shanxi, 041004, China
| | - Run-Wei Li
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
| |
Collapse
|
19
|
Park J, Hadamek T, Posadas AB, Cha E, Demkov AA, Hwang H. Multi-layered NiO y/NbO x/NiO y fast drift-free threshold switch with high I on/I off ratio for selector application. Sci Rep 2017. [PMID: 28642471 PMCID: PMC5481432 DOI: 10.1038/s41598-017-04529-4] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022] Open
Abstract
NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investigating the delay time dependency at various voltages and temperatures. Based on the investigation, we reveal that the origin of leakage current in NbOx is partly due to insufficient Schottky barrier height originating from interface defects between the electrodes and NbOx layer. The leakage current problem can be addressed by inserting thin NiOy barrier layers. The NiOy inserted NbOx device is drift-free and exhibits high Ion/Ioff ratio (>5400), fast switching speed (<2 ns), and high operating temperature (>453 K) characteristics which are highly suitable to selector application for x-point memory arrays. We show that NbOx device with NiOx interlayers in series with resistive random access memory (ReRAM) device demonstrates improved readout margin (>29 word lines) suitable for x-point memory array application.
Collapse
Affiliation(s)
- Jaehyuk Park
- Department of Material Science and Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea
| | - Tobias Hadamek
- Department of Physics, The University of Texas at Austin, Austin, Texas, 78712, USA
| | - Agham B Posadas
- Department of Physics, The University of Texas at Austin, Austin, Texas, 78712, USA
| | - Euijun Cha
- Department of Material Science and Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea
| | - Alexander A Demkov
- Department of Physics, The University of Texas at Austin, Austin, Texas, 78712, USA
| | - Hyunsang Hwang
- Department of Material Science and Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea.
| |
Collapse
|
20
|
Hong SC, Lee M, Kim D. The Optical Behavior of VO 2Film Modulated by the Morphology and Preferred Growing Axis. B KOREAN CHEM SOC 2017. [DOI: 10.1002/bkcs.11052] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Seong-Cheol Hong
- Department of Chemistry; Pukyong National University; Busan 48513 Republic of Korea
| | - Myeongsoon Lee
- Department of Chemistry; Pukyong National University; Busan 48513 Republic of Korea
| | - Don Kim
- Department of Chemistry; Pukyong National University; Busan 48513 Republic of Korea
| |
Collapse
|
21
|
Kumar S, Maury F, Bahlawane N. Electrical Switching in Semiconductor-Metal Self-Assembled VO 2 Disordered Metamaterial Coatings. Sci Rep 2016; 6:37699. [PMID: 27883052 PMCID: PMC5121613 DOI: 10.1038/srep37699] [Citation(s) in RCA: 33] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2016] [Accepted: 11/01/2016] [Indexed: 11/21/2022] Open
Abstract
As a strongly correlated metal oxide, VO2 inspires several highly technological applications. The challenging reliable wafer-scale synthesis of high quality polycrystalline VO2 coatings is demonstrated on 4” Si taking advantage of the oxidative sintering of chemically vapor deposited VO2 films. This approach results in films with a semiconductor-metal transition (SMT) quality approaching that of the epitaxial counterpart. SMT occurs with an abrupt electrical resistivity change exceeding three orders of magnitude with a narrow hysteresis width. Spatially resolved infrared and Raman analyses evidence the self-assembly of VO2 disordered metamaterial, compresing monoclinic (M1 and M2) and rutile (R) domains, at the transition temperature region. The M2 mediation of the M1-R transition is spatially confined and related to the localized strain-stabilization of the M2 phase. The presence of the M2 phase is supposed to play a role as a minor semiconducting phase far above the SMT temperature. In terms of application, we show that the VO2 disordered self-assembly of M and R phases is highly stable and can be thermally triggered with high precision using short heating or cooling pulses with adjusted strengths. Such a control enables an accurate and tunable thermal control of the electrical switching.
Collapse
Affiliation(s)
- Sunil Kumar
- Luxembourg Institute of Science and Technology (LIST), 5 avenue des Hauts-Fourneaux L-4362 Esch-sur-Alzette Luxembourg
| | - Francis Maury
- CIRIMAT, ENSIACET-4 allée E. Monso, 31030 Toulouse, France
| | - Naoufal Bahlawane
- Luxembourg Institute of Science and Technology (LIST), 5 avenue des Hauts-Fourneaux L-4362 Esch-sur-Alzette Luxembourg
| |
Collapse
|
22
|
Li D, Sharma AA, Gala DK, Shukla N, Paik H, Datta S, Schlom DG, Bain JA, Skowronski M. Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices. ACS APPLIED MATERIALS & INTERFACES 2016; 8:12908-12914. [PMID: 27136956 DOI: 10.1021/acsami.6b03501] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model.
Collapse
Affiliation(s)
| | | | | | - Nikhil Shukla
- Department of Electrical Engineering, University of Notre Dame , Notre Dame, Indiana 46556, United States
| | - Hanjong Paik
- Department of Material Science and Engineering, Cornell University , Ithaca, New York 14853, United States
| | - Suman Datta
- Department of Electrical Engineering, University of Notre Dame , Notre Dame, Indiana 46556, United States
| | - Darrell G Schlom
- Department of Material Science and Engineering, Cornell University , Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science , Ithaca, New York 14853, United States
| | | | | |
Collapse
|