Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-metal transition threshold voltage to the incident wave. The detection concept is demonstrated through actuation of biased VO2 switches encapsulated in a pair of coupled antennas by interrupting coplanar waveguides for broadband measurements, on silicon substrates. Ultimately, we propose an electromagnetic-wave-sensitive voltage-controlled spike generator based on VO2 switches in an astable spiking circuit. The fabricated sensors show responsivities of around 66.3 MHz.W-1 at 1 μW, with a low noise equivalent power of 5 nW.Hz-0.5 at room temperature, for a footprint of 2.5 × 10-5 mm2. The responsivity in static characterizations is 76 kV.W-1. Based on experimental statistical data measured on robust fabricated devices, we discuss stochastic behavior and noise limits of VO2 -based spiking sensors applicable for wave power sensing in mm-wave and sub-terahertz range.

Research on the effect of an androgenic hormone product on the functional status of common sebaceous glands in dogs

Nowadays, a high incidence of cutaneous tumors is observed in domestic carnivorous in pet clinic, the sebaceous glands being the starting point for the development of these tumors. The hormonal imbalances are considered to be the most common etiology for these tumors, so the current research is based on the effects of an androgenic like hormonal drug on the functionality of the sebaceous glands in dogs. For this purpose, 32 dogs were distributed in 4 groups: control group 1 (8 dogs - females), control group 2 (8 dogs - males), experimental group 1 (8 dogs - females) and experimental group 2 (8 dogs - males). The investigation targeted the pH of skin and the rate of sebum's secretion. The animals from the experimental groups were treated with Anabolin forte for 2 days at a dose of 1 mg/kg body weight/day, intramuscular. The obtained results revealed that administration of Anabolin forte in males induced a significantly distinct intensification (with 10.66%) of sebum's secretion and a significant decrease of pH of the skin (with 17.1%) compared to the animals from the control group. The administration of Anabolin forte in females induced a significantly distinct intensification (with 17.47%) of sebum's secretion and a significant decrease of the pH of the skin (with 14.32%) compared to the animals from the control group.

The evolution of some blood parameters in hypovolemia conditions in rabbits

The shock is a general, non-specific pathological process, caused by the sudden action of very brutal pathogens, a situation for which the body has no reserves for qualitative and quantitative compensation-adaptation. The objective of our experiment was to make an evaluation of the changes in some hematological and biochemical parameters of the blood, during some hypovolemic evolutions, in the rabbits. Twenty New Zealand White rabbits we used. An IDEXX ProCyte Dx Hematology Analyzer was applied to perform hematological determinations. An IDEXX VetTest Chemistry Analyzer was used to perform blood biochemistry determinations. The data obtained were statistically analyzed, calculating the Media and Standard Deviation (SD), using the Microsoft Excel application. At the same time, the statistical significance of the differences between the batches was calculated based on the t test (Student) using the Microsoft Excel application. The study revealed a decrease in the number of red blood cells and leukocytes per unit volume of blood (p⟨0.05) in the case of group 2 and an increase in glucose, triglycerides (p⟨0.05). Experimental hypovolemia induced in the conditions of our experiment determined: an obvious posthemorrhagic anemia, a significant leukopenia mainly 6 hours after the production of hypovolemic shock and a significant hyperglycemia, manifested mainly 12 hours after the induction of hypovolemia.

Crowdsensing IoT Architecture for Pervasive Air Quality and Exposome Monitoring: Design, Development, Calibration, and Long-Term Validation

A pervasive assessment of air quality in an urban or mobile scenario is paramount for personal or city-wide exposure reduction action design and implementation. The capability to deploy a high-resolution hybrid network of regulatory grade and low-cost fixed and mobile devices is a primary enabler for the development of such knowledge, both as a primary source of information and for validating high-resolution air quality predictive models. The capability of real-time and cumulative personal exposure monitoring is also considered a primary driver for exposome monitoring and future predictive medicine approaches. Leveraging on chemical sensing, machine learning, and Internet of Things (IoT) expertise, we developed an integrated architecture capable of meeting the demanding requirements of this challenging problem. A detailed account of the design, development, and validation procedures is reported here, along with the results of a two-year field validation effort.

On the pinning force in high density MgB2 samples

An analysis of the field dependence of the pinning force in different, high density sintered samples of MgB₂ is presented. The samples were chosen to be representative for pure MgB₂, MgB₂ with additives, and partially oriented massive samples. In some cases, the curves of pinning force versus magnetic field of the selected samples present peculiar profiles and application of the typical scaling procedures fails. Based on the percolation model, we show that most features of the field dependence of the critical force that generate dissipation comply with the Dew-Hughes scaling law predictions within the grain boundary pinning mechanism if a connecting factor related to the superconducting connection of the grains is used. The field dependence of the connecting function, which is dependent on the superconducting anisotropy, is the main factor that controls the boundary between dissipative and non-dissipative current transport in high magnetic field. Experimental data indicate that the connecting function is also dependent on the particular properties (e.g., the presence of slightly non-stoichiometric phases, defects, homogeneity, and others) of each sample and it has the form of a single or double peaked function in all investigated samples.

A Wearable Low-Power Sensing Platform for Environmental and Health Monitoring: The Convergence Project

The low-power sensing platform proposed by the Convergence project is foreseen as a wireless, low-power and multifunctional wearable system empowered by energy-efficient technologies. This will allow meeting the strict demands of life-style and healthcare applications in terms of autonomy for quasi-continuous collection of data for early-detection strategies. The system is compatible with different kinds of sensors, able to monitor not only health indicators of individual person (physical activity, core body temperature and biomarkers) but also the environment with chemical composition of the ambient air (NOx, COx, NHx particles) returning meaningful information on his/her exposure to dangerous (safety) or pollutant agents. In this article, we introduce the specifications and the design of the low-power sensing platform and the different sensors developed in the project, with a particular focus on pollutant sensing capabilities and specifically on NO2 sensor based on graphene and CO sensor based on polyaniline ink.

Coupled VO2 Oscillators Circuit as Analog First Layer Filter in Convolutional Neural Networks

In this work we present an in-memory computing platform based on coupled VO₂ oscillators fabricated in a crossbar configuration on silicon. Compared to existing platforms, the crossbar configuration promises significant improvements in terms of area density and oscillation frequency. Further, the crossbar devices exhibit low variability and extended reliability, hence, enabling experiments on 4-coupled oscillator. We demonstrate the neuromorphic computing capabilities using the phase relation of the oscillators. As an application, we propose to replace digital filtering operation in a convolutional neural network with oscillating circuits. The concept is tested with a VGG13 architecture on the MNIST dataset, achieving performances of 95% in the recognition task.

Extended gate field-effect-transistor for sensing cortisol stress hormone

Cortisol is a hormone released in response to stress and is a major glucocorticoid produced by adrenal glands. Here, we report a wearable sensory electronic chip using label-free detection, based on a platinum/graphene aptamer extended gate field effect transistor (EG-FET) for the recognition of cortisol in biological buffers within the Debye screening length. The device shows promising experimental features for real-time monitoring of the circadian rhythm of cortisol in human sweat. We report a hysteresis-free EG-FET with a voltage sensitivity of the order of 14 mV/decade and current sensitivity up to 80% over the four decades of cortisol concentration. The detection limit is 0.2 nM over a wide range, between 1 nM and 10 µM, of cortisol concentrations in physiological fluid, with negligible drift over time and high selectivity. The dynamic range fully covers those in human sweat. We propose a comprehensive analysis and a unified, predictive analytical mapping of current sensitivity in all regimes of operation.

Second magnetization peak, rhombic-to-square Bragg vortex glass transition, and intersecting magnetic hysteresis curves in overdoped BaFe2(As1-xPx)2 single crystals

The second magnetization peak (SMP) in the fourfold symmetric superconducting single crystals (such as iron pnictides and tetragonal cuprates) has been attributed to the rhombic-to-square transition (RST) of the quasi-ordered vortex solid (the Bragg vortex glass, BVG). This represents an alternative to the pinning-induced BVG disordering as the actual SMP mechanism. The analysis of the magnetic response of BaFe2(As1-xPx)2 specimens presented here shows that the SMP is not generated by the RST. However, the latter can affect the pinning-dependent SMP onset field if this is close to the (intrinsic) RST line, through the occurrence of a "shoulder" on the magnetic hysteresis curves m(H), and a maximum in the temperature variation of the DC critical current density. These features disappear in AC conditions, where the vortex system is dynamically ordered in the RST domain, emphasizing the essential role of vortex dislocations for an efficient accommodation of the vortex system to the pinning landscape and the SMP development. The m(H) shoulder is associated with a precipitous pinning-induced proliferation of dislocations at the RST, where the BVG elastic "squash" modulus softens. The DC magnetization relaxation indicates that the pinning-induced vortex system disordering continues above the RST domain, as the basic SMP mechanism.

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by using quantum mechanical band-to-band tunneling and excellent electrostatic control. Meanwhile, negative capacitance (NC) of ferroelectrics has been proposed as a promising performance booster of MOSFETs to bypass the aforementioned fundamental limit by exploiting the differential amplification of the gate voltage under certain conditions. We combine these two principles into a single structure, a negative capacitance heterostructure TFET, and experimentally demonstrate a double beneficial effect: (i) a super-steep SS value down to 10 mV/decade and an extended low slope region that is due to the NC effect and, (ii) a remarkable off-current reduction that is experimentally observed and explained for the first time by the effect of the ferroelectric dipoles, which set the surface potential in a slightly negative value and further blocks the source tunneling current in the off-state. State-of-the-art InAs/InGaAsSb/GaSb nanowire TFETs are employed as the baseline transistor and PZT and silicon-doped HfO₂ as ferroelectric materials.

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Recently, the field of Metal-Insulator-Transition (MIT) materials has emerged as an unconventional solution for novel energy efficient electronic functions, such as steep slope subthermionic switches, neuromorphic hardware, reconfigurable radiofrequency functions, new types of sensors, terahertz and optoelectronic devices. Employing radiofrequency (RF) electronic circuits with a MIT material like vanadium Dioxide, VO₂, requires appropriate characterization tools and fabrication processes. In this work, we develop and use 3D Smith charts for devices and circuits having complex frequency dependences, like the ones resulting using MIT materials. The novel foundation of a 3D Smith chart involves here the geometrical fundamental notions of oriented curvature and variable homothety in order to clarify first theoretical inconsistencies in Foster and Non Foster circuits, where the driving point impedances exhibit mixed clockwise and counter-clockwise frequency dependent (oriented) paths on the Smith chart as frequency increases. We show here the unique visualization capability of a 3D Smith chart, which allows to quantify orientation over variable frequency. The new 3D Smith chart is applied as a joint complex-scalar 3D multi-parameter modelling and characterization environment for reconfigurable RF design exploiting Metal-Insulator-Transition (MIT) materials. We report fabricated inductors with record quality factors using VO₂ phase transition to program multiple tuning states, operating in the range 4 GHz to 10 GHz.

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative Capacitance (NC) in ferroelectric materials is proposed in order to address this physical limitation of CMOS technology. A polarization destabilization in ferroelectrics causes an effective negative permittivity, resulting in a differential voltage amplification and a reduced subthreshold swing when integrated into the gate stack of a transistor. The novelty and universality of this approach relate to the fact that the gate stack is not anymore a passive part of the transistor and contributes to signal amplification. In this paper, we experimentally validate NC as a universal performance booster: (i) for complementary MOSFETs, of both n- and p-type in an advanced CMOS technology node, and, (ii) for both digital and analog significant enhancements of key figures of merit for information processing (subthreshold swing, overdrive, and current efficiency factor). Accordingly, a sub-thermal swing down to 10 mV/decade together with an enhanced current efficiency factor up to 10⁵ V⁻¹ is obtained in both n- and p-type MOSFETs at room temperature by exploiting a PZT capacitor as the NC booster. As a result of the subthreshold swing reduction and overdrive improvement observed by NC, the required supply voltage to provide the same on-current is reduced by approximately 50%.

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

Wearable systems could offer noninvasive and real-time solutions for monitoring of biomarkers in human sweat as an alternative to blood testing. Recent studies have demonstrated that the concentration of certain biomarkers in sweat can be directly correlated to their concentrations in blood, making sweat a trusted biofluid candidate for noninvasive diagnostics. We introduce a fully on-chip integrated wearable sweat sensing system to track biochemical information at the surface of the skin in real time. This system heterogeneously integrates, on a single silicon chip, state-of-the-art ultrathin body (UTB) fully depleted silicon-on-insulator (FD-SOI) ISFET sensors with a biocompatible microfluidic interface, to deliver a "lab-on-skin" sensing platform. A full process for the fabrication of this system is proposed in this work and is demonstrated by standard semiconductor fabrication procedures. The system is capable of collecting small volumes of sweat from the skin of a human and posteriorly passively driving the biofluid, by capillary action, to a set of functionalized ISFETs for analysis of pH level and Na⁺ and K⁺ concentrations. Drop-casted ion-sensing membranes on different sets of sensors on the same substrate enable multiparameter analysis on the same chip, with small and controlled cross-sensitivities, whereas a miniaturized quasireference electrodes set a stable analyte potential, avoiding the use of a cumbersome external reference electrode. The progress of lab-on-skin technology reported here can lead to autonomous wearable systems enabling real-time continuous monitoring of sweat composition, with applications ranging from medicine to lifestyle behavioral engineering and sports.

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in Hf xZr(1- x)O2 Ultrathin Capacitors

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competitiveness depends on the power efficiency that requires reliable low-voltage operation. Here, we show genuine ferroelectric switching in Hf _xZr_{(1- x)}O₂ (HZO) layers in the application-relevant capacitor geometry, for driving signals as low as 800 mV and coercive voltage below 500 mV. Enhanced piezoresponse force microscopy with sub-picometer sensitivity allowed for probing individual polarization domains under the top electrode and performing a detailed analysis of hysteretic switching. The authentic local piezoelectric loops and domain wall movement under bias attest to the true ferroelectric nature of the detected nanodomains. The systematic analysis of local piezoresponse loop arrays reveals a totally unexpected thickness dependence of the coercive fields in HZO capacitors. The thickness decrease from 10 to 7 nm is associated with a remarkably strong decrease of the coercive field, with about 50% of the capacitor area switched at coercive voltages ≤0.5 V. Our explanation consistent with the experimental data involves a change of mechanism of nuclei-assisted switching when the thickness decreases below 10 nm. The practical implication of this effect is a robust ferroelectric switching under the millivolt-range driving signal, which is not expected for the standard coercive voltage scaling law. These results demonstrate a strong potential for further aggressive thickness reduction of HZO layers for low-power electronics.

III-V heterostructure tunnel field-effect transistor

The tunnel field-effect transistor (TFET) is regarded as one of the most promising solid-state switches to overcome the power dissipation challenge in ultra-low power integrated circuits. TFETs take advantage of quantum mechanical tunneling hence exploit a different current control mechanism compared to standard MOSFETs. In this review, we describe state-of-the-art development of TFET both in terms of performances and of materials integration and we identify the main remaining technological challenges such as heterojunction defects and oxide/channel interface traps causing trap-assisted-tunneling (TAT). Mesa-structures, planar as well as vertical geometries are examined. Conductance slope analysis on InAs/GaSb nanowire tunnel diodes are reported, these two-terminal measurements can be relevant to investigate the tunneling behavior. A special focus is dedicated to III-V heterostructure TFET, as different groups have recently shown encouraging results achieving the predicted sub-thermionic low-voltage operation.

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a trained-polycrystalline PZT capacitor and the tunnel FET (TFET) gate capacitance fabricated on a strained silicon-nanowire technology. We report a non-hysteretic switch configuration by combining a homojunction TFET and a negative capacitance effect booster, suitable for logic applications, for which the on-current is increased by a factor of 100, the transconductance by 2 orders of magnitude, and the low swing region is extended. The operation of a hysteretic negative capacitance TFET, when the matching condition for the negative capacitance is fulfilled only in a limited region of operation, is also reported and discussed. In this late case, a limited improvement in the device performance is observed. Overall, the paper demonstrates the main beneficial effects of negative capacitance on TFETs are the overdrive and transconductance amplification, which exactly address the most limiting performances of current TFETs.

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursued approaches to achieve such a subthermionic subthreshold swing consist in alternative carrier injection mechanisms, like quantum mechanical band-to-band tunneling (BTBT) in Tunnel FETs or abrupt phase-change in metal-insulator transition (MIT) devices. The strengths of the BTBT and MIT have been combined in a hybrid device architecture called phase-change tunnel FET (PC-TFET), in which the abrupt MIT in vanadium dioxide (VO₂) lowers the subthreshold swing of strained-silicon nanowire TFETs. In this work, we demonstrate that the principle underlying the low swing in the PC-TFET relates to a sub-unity body factor achieved by an internal differential gate voltage amplification. We study the effect of temperature on the switching ratio and the swing of the PC-TFET, reporting values as low as 4.0 mV/decade at 25 °C, 7.8 mV/decade at 45 °C. We discuss how the unique characteristics of the PC-TFET open new perspectives, beyond FETs and other steep-slope transistors, for low power electronics, analog circuits and neuromorphic computing.

Graphene Quantum Capacitors for High Frequency Tunable Analog Applications

Graphene quantum capacitors (GQC) are demonstrated to be enablers of radio-frequency (RF) functions through voltage-tuning of their capacitance. We show that GQC complements MEMS and MOSFETs in terms of performance for high frequency analog applications and tunability. We propose a CMOS compatible fabrication process and report the first experimental assessment of their performance at microwaves frequencies (up to 10 GHz), demonstrating experimental GQCs in the pF range with a tuning ratio of 1.34:1 within 1.25 V, and Q-factors up to 12 at 1 GHz. The figures of merit of graphene variable capacitors are studied in detail from 150 to 350 K. Furthermore, we describe a systematic, graphene specific approach to optimize their performance and predict the figures of merit achieved if such a methodology is applied.

Condition for the negative capacitance effect in metal-ferroelectric-insulator-semiconductor devices

In this paper, we report a detailed study of the negative capacitance field effect transistor (NCFET). We present the condition for the stabilization of the negative capacitance to achieve the voltage amplification across the active layer. The theory is based on Landau's theory of ferroelectrics combined with the surface potential model in all regimes of operation. We demonstrate the validity of the presented theory on experimental NCFETs using a gate stack made of P(VDF-TrFE) and SiO2. The proposed analytical modeling shows good agreement with experimental data.

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technology, instead of bulk MOSFETs, raise new opportunities and questions about the most suitable device architectures for sensing integrated circuits. In this work, we propose pH and ion sensors exploiting FinFETs fabricated on bulk silicon by a fully CMOS compatible approach, as an alternative to the widely investigated silicon nanowires on silicon-on-insulator substrates. We also provide an analytical insight of the concept of sensitivity for the electronic integration of sensors. N-channel fully depleted FinFETs with critical dimensions on the order of 20 nm and HfO2 as a high-k gate insulator have been developed and characterized, showing excellent electrical properties, subthreshold swing, SS ∼ 70 mV/dec, and on-to-off current ratio, Ion/Ioff ∼ 10(6), at room temperature. The same FinFET architecture is validated as a highly sensitive, stable, and reproducible pH sensor. An intrinsic sensitivity close to the Nernst limit, S = 57 mV/pH, is achieved. The pH response in terms of output current reaches Sout = 60%. Long-term measurements have been performed over 4.5 days with a resulting drift in time δVth/δt = 0.10 mV/h. Finally, we show the capability to reproduce experimental data with an extended three-dimensional commercial finite element analysis simulator, in both dry and wet environments, which is useful for future advanced sensor design and optimization.

Wafer-level hysteresis-free resonant carbon nanotube transistors

We report wafer-level fabrication of resonant-body carbon nanotube (CNT) field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obtained. Through combined chemical and thermal treatments, hysteresis-free (in vacuum) suspended-body CNTFETs have been demonstrated. Electrostatic actuation by lateral gate and FET-based readout of mechanical resonance have been achieved at room temperature. Both upward and downward in situ frequency tuning has been experimentally demonstrated in the dual-gate architecture. The minuscule mass, high resonance frequency, and in situ tunability of the resonant CNTFETs offer promising features for applications in radio frequency signal processing and ultrasensitive sensing.

Room-temperature negative differential resistance in graphene field effect transistors: experiments and theory

In this paper we demonstrate experimentally and discuss the negative differential resistance (NDR) in dual-gated graphene field effect transistors (GFETs) at room temperature for various channel lengths, ranging from 200 nm to 5 μm. The GFETs were fabricated using chemically vapor-deposited graphene with a top gate oxide down to 2.5 nm of equivalent oxide thickness (EOT). We originally explain and demonstrate with systematic simulations that the onset of NDR occurs in the unipolar region itself and that the main mechanism behind NDR is associated with the competition between the specific field dependence of carrier density and the drift velocity in GFET. Finally, we show experimentally that NDR behavior can still be obtained with devices of higher EOTs; however, this comes at the cost of requiring higher bias values and achieving lower NDR level.

A single active nanoelectromechanical tuning fork front-end radio-frequency receiver

Nanoelectromechanical systems (NEMS) offer the potential to revolutionize fundamental methods employed for signal processing in today's telecommunication systems, owing to their spectral purity and the prospect of integration with existing technology. In this work we present a novel, front-end receiver topology based on a single device silicon nanoelectromechanical mixer-filter. The operation is demonstrated by using the signal amplification in a field effect transistor (FET) merged into a tuning fork resonator. The combination of both a transistor and a mechanical element into a hybrid unit enables on-chip functionality and performance previously unachievable in silicon. Signal mixing, filtering and demodulation are experimentally demonstrated at very high frequencies ( > 100 MHz), maintaining a high quality factor of Q = 800 and stable operation at near ambient pressure (0.1 atm) and room temperature (T = 300 K). The results show that, ultimately miniaturized, silicon NEMS can be utilized to realize multi-band, single-chip receiver systems based on NEMS mixer-filter arrays with reduced system complexity and power consumption.

Nanomechanical silicon resonators with intrinsic tunable gain and sub-nW power consumption

Nanoelectromechanical systems (NEMS) as integrated components for ultrasensitive sensing, time keeping, or radio frequency applications have driven the search for scalable nanomechanical transduction on-chip. Here, we present a hybrid silicon-on-insulator platform for building NEM oscillators in which fin field effect transistors (FinFETs) are integrated into nanomechanical silicon resonators. We demonstrate transistor amplification and signal mixing, coupled with mechanical motion at very high frequencies (25-80 MHz). By operating the transistor in the subthreshold region, the power consumption of resonators can be reduced to record-low nW levels, opening the way for the parallel operation of hundreds of thousands of NEM oscillators. The electromechanical charge modulation due to the field effect in a resonant transistor body constitutes a scalable nanomechanical motion detection all-on-chip and at room temperature. The new class of tunable NEMS represents a major step toward their integration in resonator arrays for applications in sensing and signal processing.

Carbon nanotube crossed junction by two step dielectrophoresis

The crossed junction formed between a multi walled carbon nanotube (MWCNT) and a bundle of single walled carbon nanotube (SWCNT) is investigated. The junction is fabricated by orthogonally assembling the MWCNT and SWCNT by a two-step dielectrophoresis process. The conventional dielectrophoresis method to self-assemble carbon nanotubes has been modified to be able to align single MWCNT and SWCNT at predefined location on a substrate. At room temperature, the junction has an ohmic behavior with junction resistance of about 500 KOmega or a conductance of 0.05 (e2/h). At 77 K, the onset of a Schottky-like behavior was observed. The resulting junction has an extremely tiny area of less than 20 nm2 and yet supports a current density of 10(7) A/cm2 at 1 V. The proposed fabrication technique is a convenient way to fabricate novel prototype devices to investigate material properties and new device architecture. Following further optimization, this cross-junction can be an interesting candidate for cross-bar like interconnects, with potential applications in dense logic and memory circuits.

SWNT array resonant gate MOS transistor

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

Directed submucosal tunneling permits in-line endoscope positioning for transgastric natural orifice translumenal endoscopic surgery (NOTES)

BACKGROUND

Submucosal dissection is demonstrated to be a technically feasible, safe means of obtaining peroral transgastric peritoneal access for natural orifice translumenal endoscopic surgery (NOTES). The authors hypothesized that their previously described self-approximating translumenal access technique (STAT) could be used to create directed gastric submucosal tunnels permitting in-line endoscope positioning with predetermined abdominal locations that might otherwise be difficult to access.

METHODS

In this study, 14 domestic farm swine underwent peroral transgastric peritoneoscopy. Under direct endoscopic visualization, a submucosal tunnel was created by dissecting between the mucosal and muscular layers of the stomach. Each tunnel was created with one of four intraabdominal locations (right upper quadrant, left upper quadrant, lesser sac, and pelvis) as the final target for in-line endoscope positioning. Once peritoneal access had been achieved, in-line positioning was assessed and peritoneoscopy was performed. The submucosal tunnels were closed with endoscopically placed clips. The animals were killed 2 weeks after the procedure, and necropsy was performed.

RESULTS

Submucosal tunnels were successfully directed at predetermined intraabdominal targets in 12 of the 14 animals. The mean dissection time required to create the tunnel was 51 +/- 32 min. All the transgastric tunnels were successfully closed with endoscopically placed clips (mean, 3.2 +/- 1.1), and at necropsy showed no evidence of gastrotomy leak in any of the animals. One animal experienced a duodenal perforation unrelated to the transgastric tunneling and was killed on postoperative day 2. The remaining animals recovered and gained weight (mean, 5.5 +/- 1.2 kg) in the 2-week survival period.

CONCLUSIONS

Directed submucosal dissection is technically feasible in a porcine model and permits in-line endoscope positioning with predetermined abdominal target locations. The STAT approach provides safe peritoneal access, allows for a simple reliable endoclip closure, and has an excellent short-term survival rate. This method of achieving transgastric access may be an enabling technique for future NOTES procedures.

Technique for transesophageal endoscopic cardiomyotomy (Heller myotomy): video presentation at the Society of American Gastrointestinal and Endoscopic Surgeons (SAGES) 2008, Philadelphia, PA

BACKGROUND

Previous investigators have shown the feasibility of performing an esophageal myotomy using natural orifice translumenal endoscopic surgery (NOTES), but have been unsuccessful at extending the myotomy onto the body of the stomach.

METHODS

In a nonsurvival porcine model, the authors used the self-approximating translumenal access technique (STAT) to create a submucosal tunnel in the upper esophagus and to extend it onto the body of the stomach allowing a complete cardiomyotomy.

RESULTS

The STAT approach was successfully used to create a submucosal tunnel and perform a complete myotomy of the gastroesophageal junction without complication.

CONCLUSIONS

A complete Heller-type cardiomyotomy can be successfully performed using transesophegeal NOTES.

An unusual suspect: coconut bezoar after laparoscopic Roux-en-Y gastric bypass

Nausea and vomiting after gastric bypass are common, but some of the underlying causes may be life threatening or, in some cases, unusual. This case report describes a patient who underwent laparoscopic Roux-en-Y gastric bypass and whose postoperative course was complicated by a bezoar in the gastric pouch. To our knowledge, this is the first published report addressing a coconut bezoar in the gastric pouch after gastric bypass surgery. Coconut (cocos nucifera) is known to form emulsions and suspensions, properties likely to have contributed to this patient's condition. Nutritional counseling should be an ongoing process in the postoperative care of gastric bypass patients in an effort to prevent serious complications that may arise from dietary indiscretions.

PTHrP expression in chick sternal chondrocytes is regulated by TGF-beta through Smad-mediated signaling

PTHrP regulates the rate of chondrocyte differentiation during endochondral bone formation. The expression of PTHrP and its regulation by TGF-beta, BMP-2, and PTHrP was examined in upper sternal chondrocytes following 1, 3, and 5 days of continuous treatment. While TGF-beta stimulated the expression of PTHrP (5-fold), PTHrP caused a slight inhibition, and BMP-2 markedly inhibited PTHrP mRNA expression. The effect of these factors on PTHrP expression was not simply related to the maturational state of the cells, since BMP-2 increased, while both PTHrP and TGF-beta decreased the expression of type X collagen. TGF-beta isoforms 1, 2, and 3 all stimulated PTHrP expression. Signaling events involved in the induction of PTHrP by TGF-beta were further evaluated in a PTHrP-promoter CAT construct. The effect of TGF-beta, BMP-2, and PTHrP on the PTHrP-promoter paralleled their effects on mRNA expression, with TGF-beta significantly increasing CAT activity, BMP-2 decreasing CAT activity, and PTHrP having a minimal effect. Co-transfection of the TGF-beta signaling molecule, Smad 3, mimicked the effect of TGF-beta (induction of PTHrP promoter), while dominant negative Smad 3 inhibited the induction of the PTHrP promoter by TGF-beta. Furthermore, infection with a Smad 3-expressing retrovirus mimicked the effects of exogenously added TGF-beta, and induced PTHrP mRNA expression in the infected chondrocyte culture. In contrast, a dominant negative Smad 3 completely inhibited PTHrP promoter stimulation by TGF-beta, but only partially blocked the effect of TGF-beta on PTHrP mRNA synthesis. These findings demonstrate that PTHrP is expressed in chondrocytes undergoing endochondral ossification, and show regulation, at least in part, by TGF-beta through Smad mediated signaling events.

PTHrP modulates chondrocyte differentiation through AP-1 and CREB signaling

During the process of differentiation, chondrocytes integrate a complex array of signals from local or systemic factors like parathyroid hormone-related peptide (PTHrP), Indian hedgehog, bone morphogenetic proteins and transforming growth factor beta. While PTHrP is known to be a critical regulator of chondrocyte proliferation and differentiation, the signaling pathways through which this factor acts remain to be elucidated. Here we show that both cAMP response element-binding protein (CREB) and AP-1 activation are critical to PTHrP signaling in chondrocytes. PTHrP treatment leads to rapid CREB phosphorylation and activation, while CREB DNA binding activity is constitutive. In contrast, PTHrP induces AP-1 DNA binding activity through induction of c-Fos protein expression. PTHrP activates CRE and TRE reporter constructs primarily through PKA-mediated signaling events. Both signaling pathways were found to be important mediators of PTHrP effects on chondrocyte phenotype. Alone, PTHrP suppresses maturation and stimulates proliferation of the chondrocyte cultures. However, in the presence of dominant negative inhibitors of CREB and c-Fos, these PTHrP effects were suppressed, and chondrocyte maturation was accelerated. Moreover, in combination, the effects of dominant negative c-Fos and CREB are synergistic, suggesting interaction between these signaling pathways during chondrocyte differentiation.