Optical addressing of an individual erbium ion in silicon

Electrically driven spin resonance of 4f electrons in a single atom on a surface

A pivotal challenge in quantum technologies lies in reconciling long coherence times with efficient manipulation of the quantum states of a system. Lanthanide atoms, with their well-localized 4f electrons, emerge as a promising solution to this dilemma if provided with a rational design for manipulation and detection. Here we construct tailored spin structures to perform electron spin resonance on a single lanthanide atom using a scanning tunneling microscope. A magnetically coupled structure made of an erbium and a titanium atom enables us to both drive the erbium's 4f electron spins and indirectly probe them through the titanium's 3d electrons. The erbium spin states exhibit an extended spin relaxation time and a higher driving efficiency compared to 3d atoms with spin ½ in similarly coupled structures. Our work provides a new approach to accessing highly protected spin states, enabling their coherent control in an all-electric fashion.

Optoelectronic Readout of Single Er Adatom's Electronic States Adsorbed on the Si(100) Surface at Low Temperature (9 K)

Integrating nanoscale optoelectronic functions is vital for applications such as optical emitters, detectors, and quantum information. Lanthanide atoms show great potential in this endeavor due to their intrinsic transitions. Here, we investigate Er adatoms on Si(100)-2×1 at 9 K using a scanning tunneling microscope (STM) coupled to a tunable laser. Er adatoms display two main adsorption configurations that are optically excited between 800 and 1200 nm while the STM reads the resulting photocurrents. Our spectroscopic method reveals that various photocurrent signals stem from the bare silicon surface or Er adatoms. Additional photocurrent peaks appear as the signature of the Er adatom relaxation, triggering efficient dissociation of nearby trapped excitons. Calculations using density functional theory with spin-orbit coupling correction highlight the origin of the observed photocurrent peaks as specific 4f→4f or 4f→5d transitions. This spectroscopic technique can facilitate optoelectronic analysis of atomic and molecular assemblies by offering insight into their intrinsic quantum properties.

Photoionisation detection of a single Er3+ ion with sub-100-ns time resolution

Efficient detection of single optical centres in solids is essential for quantum information processing, sensing and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionisation induced by a single Er3+ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the photoionisation detection. With this technique, the optically excited state lifetime of a single Er3+ ion in a Si nano-transistor is measured for the first time to be [Formula: see text]s. Our results demonstrate an efficient approach for detecting a charge state change induced by Er excitation and relaxation. This approach could be used for fast readout of other single optical centres in solids and is attractive for large-scale integrated optical quantum systems thanks to the multi-channel RF reflectometry demonstrated with frequency multiplexing techniques.

Cavity-coupled telecom atomic source in silicon

Novel T centers in silicon hold great promise for quantum networking applications due to their telecom band optical transitions and the long-lived ground state electronic spins. An open challenge for advancing the T center platform is to enhance its weak and slow zero phonon line (ZPL) emission. In this work, by integrating single T centers with a low-loss, small mode-volume silicon photonic crystal cavity, we demonstrate an enhancement of the fluorescence decay rate by a factor of F = 6.89. Efficient photon extraction enables the system to achieve an average ZPL photon outcoupling rate of 73.3 kHz under saturation, which is about two orders of magnitude larger than the previously reported value. The dynamics of the coupled system is well modeled by solving the Lindblad master equation. These results represent a significant step towards building efficient T center spin-photon interfaces for quantum information processing and networking applications.

Erbium emitters in commercially fabricated nanophotonic silicon waveguides

Quantum memories integrated into nanophotonic silicon devices are a promising platform for large quantum networks and scalable photonic quantum computers. In this context, erbium dopants are particularly attractive, as they combine optical transitions in the telecommunications frequency band with the potential for second-long coherence time. Here, we show that these emitters can be reliably integrated into commercially fabricated low-loss waveguides. We investigate several integration procedures and obtain ensembles of many emitters with an inhomogeneous broadening of <2 GHz and a homogeneous linewidth of <30 kHz. We further observe the splitting of the electronic spin states in a magnetic field up to 9 T that freezes paramagnetic impurities. Our findings are an important step toward long-lived quantum memories that can be fabricated on a wafer-scale using CMOS technology.

Emission enhancement of erbium in a reverse nanofocusing waveguide

Since Purcell's seminal report 75 years ago, electromagnetic resonators have been used to control light-matter interactions to make brighter radiation sources and unleash unprecedented control over quantum states of light and matter. Indeed, optical resonators such as microcavities and plasmonic antennas offer excellent control but only over a limited spectral range. Strategies to mutually tune and match emission and resonator frequency are often required, which is intricate and precludes the possibility of enhancing multiple transitions simultaneously. In this letter, we report a strong radiative emission rate enhancement of Er³⁺-ions across the telecommunications C-band in a single plasmonic waveguide based on the Purcell effect. Our gap waveguide uses a reverse nanofocusing approach to efficiently enhance, extract and guide emission from the nanoscale to a photonic waveguide while keeping plasmonic losses at a minimum. Remarkably, the large and broadband Purcell enhancement allows us to resolve Stark-split electric dipole transitions, which are typically only observed under cryogenic conditions. Simultaneous radiative emission enhancement of multiple quantum states is of great interest for photonic quantum networks and on-chip data communications.

Waveguide-integrated silicon T centres

The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking technologies and distributed quantum computing. These newly rediscovered silicon defects offer direct telecommunications-band photonic emission, long-lived electron and nuclear spin qubits, and proven native integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips at scale. Here we demonstrate further levels of integration by characterizing T centre spin ensembles in single-mode waveguides in SOI. In addition to measuring long spin T₁ times, we report on the integrated centres' optical properties. We find that the narrow homogeneous linewidth of these waveguide-integrated emitters is already sufficiently low to predict the future success of remote spin-entangling protocols with only modest cavity Purcell enhancements. We show that further improvements may still be possible by measuring nearly lifetime-limited homogeneous linewidths in isotopically pure bulk crystals. In each case the measured linewidths are more than an order of magnitude lower than previously reported and further support the view that high-performance, large-scale distributed quantum technologies based upon T centres in silicon may be attainable in the near term.

A Telecom O-Band Emitter in Diamond

Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which we observe in silicon-doped bulk single crystal diamonds and microdiamonds. Combining absorption and photoluminescence measurements, we identify a zero-phonon line at 1221 nm and phonon replicas separated by 42 meV. Using transient absorption spectroscopy, we measure an excited state lifetime of around 270 ps and observe a long-lived baseline that may arise from intersystem crossing to another spin manifold.

Optical observation of single spins in silicon

The global quantum internet will require long-lived, telecommunications-band photon-matter interfaces manufactured at scale¹. Preliminary quantum networks based on photon-matter interfaces that meet a subset of these demands are encouraging efforts to identify new high-performance alternatives². Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advanced platform within the global integrated photonics and microelectronics industries, as well as host to record-setting long-lived spin qubits³. Despite the overwhelming potential of the silicon quantum platform, the optical detection of individually addressable photon-spin interfaces in silicon has remained elusive. In this work, we integrate individually addressable 'T centre' photon-spin qubits in silicon photonic structures and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.

Visible and near-infrared photoluminescence of a supramolecular complex constructed from a cycloparaphenylene nanoring and an erbium metallofullerene

Erbium metallofullerenes exhibit near-infrared photoluminescence from the Er³⁺ ions, which has potential applications in telecommunications, optical devices and bioscience. In this manuscript, we report the construction of a supramolecular complex of metallofullerene Er₃N@C₈₀ and cycloparaphenylene [12]CPP to adjust the near-infrared photoluminescence of Er₃N@C₈₀ through host-guest interactions. Moreover, this supramolecular complex shows a multiwavelength luminescence property. Mass spectrometry, electrochemical measurements and proton NMR spectroscopy were used to characterize the structure of Er₃N@C₈₀⊂[12]CPP. The electrochemical results of Er₃N@C₈₀⊂[12]CPP show the negatively shifted redox potentials compared to pristine Er₃N@C₈₀ and the ¹H NMR signals of Er₃N@C₈₀⊂[12]CPP shift upfield compared to pristine [12]CPP. More importantly, the photoluminescence spectra show that the [12]CPP nanoring can affect the near-infrared emission of encapsulated Er³⁺ ions in Er₃N@C₈₀, with the characteristic emission peak of Er³⁺ at 1.5 μm being broadened and enhanced in the Er₃N@C₈₀⊂[12]CPP complex, while the fluorescence lifetime of Er³⁺ also becomes longer after assembly formation. Furthermore, the Er₃N@C₈₀ guest also can influence the photoluminescence property of [12]CPP, whose emission peaks exhibit a slight blue-shift in the Er₃N@C₈₀⊂[12]CPP complex. This study illustrates that the outer nanoring can be employed to adjust the photoluminescence of the encapsulated Er³⁺ ion in Er₃N@C₈₀.

Erbium chloride silicate-based vertical cavity surface-emitting laser at the near-infrared communication band

Silicon-based integrated optoelectronics has become a hotspot in the field of computers and information processing systems. An integrated coherent light source on-chip with a small footprint and high efficiency is one of the most important unresolved devices. Here, we realize a silicon-based vertical cavity surface-emitting laser in the near-infrared communication band by making efforts in both controlled preparation of high-gain erbium silicate materials and novel design of high optical feedback microcavity. Single-crystal erbium/ytterbium silicate microplates with erbium concentration as high as 5 × 10²¹ cm^-3 are controlled prepared by a chemical vapor deposition method. They can produce strong luminescence with quite a long lifetime (2.3 ms) at the wavelength of 1.5 μm. By embedding the erbium silicate microplates between two dielectric Bragg reflectors, we construct a vertical cavity surface-emitting laser at 1.5 μm, with a lasing threshold as low as 20 μJ/cm² and Q factor of nearly 2000. Our study provides a new pathway to achieve a sub-micrometer coherent light source for optical communication.

Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon

The detection of charge trap ionization induced by resonant excitation enables spectroscopy on single Er³⁺ ions in silicon nanotransistors. In this work, a time-resolved detection method is developed to investigate the resonant excitation and relaxation of a single Er³⁺ ion in silicon. The time-resolved detection is based on a long-lived current signal with a tunable reset and allows the measurement under stronger and shorter resonant excitation in comparison to time-averaged detection. Specifically, the short-pulse study gives an upper bound of 23.7 μs on the decay time of the ⁴I_13/2 state of the Er³⁺ ion. The fast decay and the tunable reset allow faster repetition of the single-ion detection, which is attractive for implementing this method in large-scale quantum systems of single optical centers. The findings on the detection mechanism and dynamics also provide an important basis for applying this technique to detect other single optical centers in solids.

Beating the standard quantum limit under ambient conditions with solid-state spins

The use of entangled sensors improves the precision limit from the standard quantum limit (SQL) to the Heisenberg limit. Most previous experiments beating the SQL are performed on the sensors that are well isolated under extreme conditions. Here, we demonstrate a sub-SQL interferometer at ambient conditions by using a multispin system, namely, the nitrogen-vacancy (NV) defect in diamond. We achieve two-spin interference with a phase sensitivity of 1.79 ± 0.06 dB beyond the SQL and three-spin interference with a phase sensitivity of 2.77 ± 0.10 dB. Besides, a magnetic sensitivity of 0.87 ± 0.09 dB beyond the SQL is achieved by two-spin interference for detecting a real magnetic field. Particularly, the deterministic and joint initialization of NV negative state, NV electron spin, and two nuclear spins is realized at room temperature. The techniques used here are of fundamental importance for quantum sensing and computing, and naturally applicable to other solid-state spin systems.

Coherent atomic mirror formed by randomly distributed ions inside a crystal

Spatial distribution of atoms plays an important role in the interaction of atomic ensembles and electromagnetic fields. In this Letter, we show that by spatio-spectral tailoring of atomic absorption, one can effectively carve out a periodic array from randomly distributed atomic ensembles hosted by a solid-state crystal. Furthermore, we observe collective atomic resonances and coherent backscattering of light from rare-earth-doped crystals. Coherent backscattering as high as 20% was observed for light at telecom wavelength from Er ions, forming an effective array with over 5000 centers.

High-fidelity single-shot readout of single electron spin in diamond with spin-to-charge conversion

High fidelity single-shot readout of qubits is a crucial component for fault-tolerant quantum computing and scalable quantum networks. In recent years, the nitrogen-vacancy (NV) center in diamond has risen as a leading platform for the above applications. The current single-shot readout of the NV electron spin relies on resonance fluorescence method at cryogenic temperature. However, the spin-flip process interrupts the optical cycling transition, therefore, limits the readout fidelity. Here, we introduce a spin-to-charge conversion method assisted by near-infrared (NIR) light to suppress the spin-flip error. This method leverages high spin-selectivity of cryogenic resonance excitation and flexibility of photoionization. We achieve an overall fidelity > 95% for the single-shot readout of an NV center electron spin in the presence of high strain and fast spin-flip process. With further improvements, this technique has the potential to achieve spin readout fidelity exceeding the fault-tolerant threshold, and may also find applications on integrated optoelectronic devices.

The NV centre in diamond has been used extensively in quantum information processing; however fault-tolerant readout of its spin remains challenging. Here, Zhang et al demonstrate a robust scheme that achieves high-fidelity readout via spin to charge conversion.

Vanadium spin qubits as telecom quantum emitters in silicon carbide

Solid-state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here, we create and isolate near-surface single vanadium dopants in silicon carbide (SiC) with stable and narrow emission in the O band, with brightness allowing cavity-free detection in a wafer-scale material. In vanadium ensembles, we characterize the complex d ¹ orbital physics in all five available sites in 4H-SiC and 6H-SiC. The optical transitions are sensitive to mass shifts from local silicon and carbon isotopes, enabling optically resolved nuclear spin registers. Optically detected magnetic resonance in the ground and excited orbital states reveals a variety of hyperfine interactions with the vanadium nuclear spin and clock transitions for quantum memories. Last, we demonstrate coherent quantum control of the spin state. These results provide a path for telecom emitters in the solid state for quantum applications.

Sensing Individual Nuclear Spins with a Single Rare-Earth Electron Spin

Rare-earth related electron spins in crystalline hosts are unique material systems, as they can potentially provide a direct interface between telecom band photons and long-lived spin quantum bits. Specifically, their optically accessible electron spins in solids interacting with nuclear spins in their environment are valuable quantum memory resources. Detection of nearby individual nuclear spins, so far exclusively shown for few dilute nuclear spin bath host systems such as the nitrogen-vacancy center in diamond or the silicon vacancy in silicon carbide, remained an open challenge for rare earths in their host materials, which typically exhibit dense nuclear spin baths. Here, we present the electron spin spectroscopy of single Ce^{3+} ions in a yttrium orthosilicate host, featuring a coherence time of T_{2}=124  μs. This coherent interaction time is sufficiently long to isolate proximal ^{89}Y nuclear spins from the nuclear spin bath of ^{89}Y. Furthermore, it allows for the detection of a single nearby ^{29}Si nuclear spin, native to the host material with ∼5% abundance. This study opens the door to quantum memory applications in rare-earth ion related systems based on coupled environmental nuclear spins, potentially useful for quantum error correction schemes.

Optical quantum nondemolition measurement of a single rare earth ion qubit

Optically-interfaced spins in the solid state are a promising platform for quantum technologies. A crucial component of these systems is high-fidelity, projective measurement of the spin state. Here, we demonstrate single-shot spin readout of a single rare earth ion qubit, Er3+, which is attractive for its telecom-wavelength optical transition and compatibility with silicon nanophotonic circuits. In previous work with laser-cooled atoms and ions, and solid-state defects, spin readout is accomplished using fluorescence on an optical cycling transition; however, Er3+ and other rare earth ions generally lack strong cycling transitions. We demonstrate that modifying the electromagnetic environment around the ion can increase the strength and cyclicity of the optical transition by several orders of magnitude, enabling single-shot quantum nondemolition readout of the ion's spin with 94.6% fidelity. We use this readout to probe coherent dynamics and relaxation of the spin.

Isolating Nanocrystals with an Individual Erbium Emitter: A Route to a Stable Single-Photon Source at 1550 nm Wavelength

Single-photon emitters based on individual atoms or individual atomic-like defects are highly sought-after components for future quantum technologies. A key challenge in this field is how to isolate just one such emitter; the best approaches still have an active emitter yield of only 50% so that deterministic integration of single active emitters is not yet possible. Here, we demonstrate the ability to isolate individual erbium emitters embedded in 20 nm nanocrystals of NaYF₄ using plasmonic aperture optical tweezers. The optical tweezers capture the nanocrystal, whereas the plasmonic aperture enhances the emission of the Er and allows the measurement of discrete emission rate values corresponding to different numbers of erbium ions. Three separate synthesis runs show near-Poissonian distribution in the discrete levels of emission yield that correspond to the expected ion concentrations, indicating that the yield of active emitters is approximately 80%. Fortunately, the trap allows for selecting the nanocrystals with only a single emitter, and so this gives a route to isolating and integrating single emitters in a deterministic way. This demonstration is a promising step toward single-photon quantum information technologies that utilize single ions in a solid-state medium, particularly because Er emits in the low-loss fiber-optic 1550 nm telecom band.

Deterministic Single-Ion Implantation of Rare-Earth Ions for Nanometer-Resolution Color-Center Generation

Single dopant atoms or dopant-related defect centers in a solid state matrix are of particular importance among the physical systems proposed for quantum computing and communication, due to their potential to realize a scalable architecture compatible with electronic and photonic integrated circuits. Here, using a deterministic source of single laser-cooled Pr^{+} ions, we present the fabrication of arrays of praseodymium color centers in yttrium-aluminum-garnet substrates. The beam of single Pr^{+} ions is extracted from a Paul trap and focused down to 30(9) nm. Using a confocal microscope, we determine a conversion yield into active color centers of up to 50% and realize a placement precision of 34 nm.

Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors

Continued scaling of semiconductor devices has driven information technology into vastly diverse applications. The performance of ultrascaled transistors is strongly influenced by local electric field and strain. As the size of these devices approaches fundamental limits, it is imperative to develop characterization techniques with nanometer resolution and three-dimensional (3D) mapping capabilities for device optimization. Here, we report on the use of single erbium (Er) ions as atomic probes for the electric field and strain in a silicon ultrascaled transistor. Stark shifts on the Er³⁺ spectra induced by both the overall electric field and the local charge environment are observed. Changes in strain smaller than 3 × 10^-6 are detected, which is around 2 orders of magnitude more sensitive than the standard techniques used in the semiconductor industry. These results open new possibilities for 3D mapping of the local strain and electric field in the channel of ultrascaled transistors.

Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength

An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the μW range. The 1-μm² transistor is tuned to involve in the transport only those electrons lying in the Er-O states. The spectrally resolved photocurrent is characterized by the typical absorption line of erbium and the linear dependence of the signal over the impinging power demonstrates that the Er-doped transistor is operating far from saturation. The relatively small number of estimated photoexcited atoms (≈ 4 × 10 4 ) makes Er-dpoed silicon potentially suitable for designing resonance-based frequency selective single photon detectors at 1550 nm.

Photoelectrical imaging and coherent spin-state readout of single nitrogen-vacancy centers in diamond

Nitrogen-vacancy (NV) centers in diamond have become an important instrument for quantum sensing and quantum information science. However, the readout of NV spin state requires bulky optical setups, limiting fabrication of miniaturized compact devices for practical use. Here we realized photoelectrical detection of magnetic resonance as well as Rabi oscillations on a single-defect level. Furthermore, photoelectrical imaging of individual NV centers at room temperature was demonstrated, surpassing conventional optical readout methods by providing high imaging contrast and signal-to-noise ratio. These results pave the way toward fully integrated quantum diamond devices.

Optically Addressing Single Rare-Earth Ions in a Nanophotonic Cavity

We demonstrate optical probing of spectrally resolved single Nd^{3+} rare-earth ions in yttrium orthovanadate. The ions are coupled to a photonic crystal resonator and show strong enhancement of the optical emission rate via the Purcell effect, resulting in near radiatively limited single photon emission. The measured high coupling cooperativity between a single photon and the ion allows for the observation of coherent optical Rabi oscillations. This could enable optically controlled spin qubits, quantum logic gates, and spin-photon interfaces for future quantum networks.

Atomic Source of Single Photons in the Telecom Band

Single atoms and atomlike defects in solids are ideal quantum light sources and memories for quantum networks. However, most atomic transitions are in the ultraviolet-visible portion of the electromagnetic spectrum, where propagation losses in optical fibers are prohibitively large. Here, we observe for the first time the emission of single photons from a single Er^{3+} ion in a solid-state host, whose optical transition at 1.5  μm is in the telecom band, allowing for low-loss propagation in optical fiber. This is enabled by integrating Er^{3+} ions with silicon nanophotonic structures, which results in an enhancement of the photon emission rate by a factor of more than 650. Dozens of distinct ions can be addressed in a single device, and the splitting of the lines in a magnetic field confirms that the optical transitions are coupled to the electronic spin of the Er^{3+} ions. These results are a significant step towards long-distance quantum networks and deterministic quantum logic for photons based on a scalable silicon nanophotonics architecture.

Atomically flat and thermally stable graphene on Si(111) with preserved intrinsic electronic properties

Silicon and graphene are two wonder materials, and their hybrid heterostructures are expected to be very interesting fundamentally and practically. In the present study, by adopting fast dry transfer and ultra-high vacuum annealing, atomically flat monolayer graphene is successfully prepared on the chemically active Si(111) substrate. More importantly, the graphene overlayer largely maintains its intrinsic electronic properties, as validated by the results of the energy-dependent electronic transparency, Dirac point observation and quantum coherence characteristics, and further confirmed by first-principles calculations. The intrinsic properties of graphene are retained up to 1030 K. The system of atomically flat and thermally stable graphene on a chemically active silicon surface with preserved inherent characteristics renders the graphene/silicon hybrid a promising system in the design of high-performance devices and the exploitation of interfacial topological quantum effects.

Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots

Deep cooling of electron and nuclear spins is equivalent to achieving polarization degrees close to 100% and is a key requirement in solid-state quantum information technologies. While polarization of individual nuclear spins in diamond and SiC (ref. ) reaches 99% and beyond, it has been limited to 50-65% for the nuclei in quantum dots. Theoretical models have attributed this limit to formation of coherent 'dark' nuclear spin states but experimental verification is lacking, especially due to the poor accuracy of polarization degree measurements. Here we measure the nuclear polarization in GaAs/AlGaAs quantum dots with high accuracy using a new approach enabled by manipulation of the nuclear spin states with radiofrequency pulses. Polarizations up to 80% are observed-the highest reported so far for optical cooling in quantum dots. This value is still not limited by nuclear coherence effects. Instead we find that optically cooled nuclei are well described within a classical spin temperature framework. Our findings unlock a route for further progress towards quantum dot electron spin qubits where deep cooling of the mesoscopic nuclear spin ensemble is used to achieve long qubit coherence. Moreover, GaAs hyperfine material constants are measured here experimentally for the first time.

Implementation of Multivariable Logic Functions in Parallel by Electrically Addressing a Molecule of Three Dopants in Silicon

To realize low-power, compact logic circuits, one can explore parallel operation on single nanoscale devices. An added incentive is to use multivalued (as distinct from Boolean) logic. Here, we theoretically demonstrate that the computation of all the possible outputs of a multivariate, multivalued logic function can be implemented in parallel by electrical addressing of a molecule made up of three interacting dopant atoms embedded in Si. The electronic states of the dopant molecule are addressed by pulsing a gate voltage. By simulating the time evolution of the non stationary electronic density built by the gate voltage, we show that one can implement a molecular decision tree that provides in parallel all the outputs for all the inputs of the multivariate, multivalued logic function. The outputs are encoded in the populations and in the bond orders of the dopant molecule, which can be measured using an STM tip. We show that the implementation of the molecular logic tree is equivalent to a spectral function decomposition. The function that is evaluated can be field-programmed by changing the time profile of the pulsed gate voltage.

Experimental Adiabatic Quantum Factorization under Ambient Conditions Based on a Solid-State Single Spin System

The adiabatic quantum computation is a universal and robust method of quantum computing. In this architecture, the problem can be solved by adiabatically evolving the quantum processor from the ground state of a simple initial Hamiltonian to that of a final one, which encodes the solution of the problem. Adiabatic quantum computation has been proved to be a compatible candidate for scalable quantum computation. In this Letter, we report on the experimental realization of an adiabatic quantum algorithm on a single solid spin system under ambient conditions. All elements of adiabatic quantum computation, including initial state preparation, adiabatic evolution (simulated by optimal control), and final state read-out, are realized experimentally. As an example, we found the ground state of the problem Hamiltonian S_{z}I_{z} on our adiabatic quantum processor, which can be mapped to the factorization of 35 into its prime factors 5 and 7.

High-Precision Measurement of the Dzyaloshinsky-Moriya Interaction between Two Rare-Earth Ions in a Solid

We report on a direct measurement of the pairwise antisymmetric exchange interaction, known as the Dzyaloshinsky-Moriya interaction (DMI), in a Nd^{3+}-doped YVO_{4} crystal. To this end, we introduce a broadband electron spin resonance technique coupled with an optical detection scheme which selectively detects only one Nd^{3+}-Nd^{3+} pair. Using this technique we can fully measure the spin-spin coupling tensor, allowing us to experimentally determine both the strength and direction of the DMI vector. We believe that this ability to fully determine the interaction Hamiltonian is of interest for studying the numerous magnetic phenomena where the DMI interaction is of fundamental importance, including multiferroics. We also detect a singlet-triplet transition within the pair, with a highly suppressed magnetic-field dependence, which suggests that such systems could form singlet-triplet qubits with long coherence times for quantum information applications.

Magnetic ground state of an individual Fe(2+) ion in strained semiconductor nanostructure

Single impurities with nonzero spin and multiple ground states offer a degree of freedom that can be utilized to store the quantum information. However, Fe(2+) dopant is known for having a single nondegenerate ground state in the bulk host semiconductors and thus is of little use for spintronic applications. Here we show that the well-established picture of Fe(2+) spin configuration can be modified by subjecting the Fe(2+) ion to high strain, for example, produced by lattice mismatched epitaxial nanostructures. Our analysis reveals that high strain induces qualitative change in the ion energy spectrum and results in nearly doubly degenerate ground state with spin projection Sz= ± 2. We provide an experimental proof of this concept using a new system: a strained epitaxial quantum dot containing individual Fe(2+) ion. Magnetic character of the Fe(2+) ground state in a CdSe/ZnSe dot is revealed in photoluminescence experiments by exploiting a coupling between a confined exciton and the single-iron impurity. We also demonstrate that the Fe(2+) spin can be oriented by spin-polarized excitons, which opens a possibility of using it as an optically controllable two-level system free of nuclear spin fluctuations.

Ferromagnetism properties of Er-doped ZnO: a GGA + U study

Our first-principles calculation finds that only the Zn vacancy can induce a 1.0 μ_B magnetic moment in Er-doped ZnO, which comes from the unpaired 2p electrons at the ligand O atom and results in the room-temperature ferromagnetism property of ZnO.

All-Optical Preparation of Coherent Dark States of a Single Rare Earth Ion Spin in a Crystal

All-optical addressing and coherent control of single solid-state based quantum bits is a key tool for fast and precise control of ground-state spin qubits. So far, all-optical addressing of qubits was demonstrated only in a very few systems, such as color centers and quantum dots. Here, we perform high-resolution spectroscopic of native and implanted single rare earth ions in solid, namely, a cerium ion in yttrium aluminum garnet (YAG) crystal. We find narrow and spectrally stable optical transitions between the spin sublevels of the ground and excited optical states. Utilizing these transitions we demonstrate the generation of a coherent dark state in electron spin sublevels of a single Ce^{3+} ion in YAG by coherent population trapping.

Single spin optically detected magnetic resonance with 60-90 GHz (E-band) microwave resonators

Magnetic resonance with ensembles of electron spins is commonly performed around 10 GHz, but also at frequencies above 240 GHz and in corresponding magnetic fields of over 9 T. However, experiments with single electron and nuclear spins so far only reach into frequency ranges of several 10 GHz, where existing coplanar waveguide structures for microwave (MW) delivery are compatible with single spin readout techniques (e.g., electrical or optical readout). Here, we explore the frequency range up to 90 GHz, with magnetic fields of up to ≈3 T for single spin magnetic resonance in conjunction with optical spin readout. To this end, we develop MW resonators with optical single spin access. In our case, rectangular 60-90 GHz (E-band) waveguides guarantee low-loss supply of microwaves to the resonators. Three dimensional cavities, as well as coplanar waveguide resonators, enhance MW fields by spatial and spectral confinement with a MW efficiency of 1.36 mT/√W. We utilize single nitrogen vacancy (NV) centers as hosts for optically accessible spins and show that their properties regarding optical spin readout known from smaller fields (<0.65 T) are retained up to fields of 3 T. In addition, we demonstrate coherent control of single nuclear spins under these conditions. Furthermore, our results extend the applicable magnetic field range of a single spin magnetic field sensor. Regarding spin based quantum registers, high fields lead to a purer product basis of electron and nuclear spins, which promises improved spin lifetimes. For example, during continuous single-shot readout, the (14)N nuclear spin shows second-long longitudinal relaxation times.

Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon

Electrical detection of spins is an essential tool for understanding the dynamics of spins, with applications ranging from optoelectronics and spintronics, to quantum information processing. For electron spins bound to donors in silicon, bulk electrically detected magnetic resonance has relied on coupling to spin readout partners such as paramagnetic defects or conduction electrons, which fundamentally limits spin coherence times. Here we demonstrate electrical detection of donor electron spin resonance in an ensemble by transport through a silicon device, using optically driven donor-bound exciton transitions. We measure electron spin Rabi oscillations, and obtain long electron spin coherence times, limited only by the donor concentration. We also experimentally address critical issues such as non-resonant excitation, strain, and electric fields, laying the foundations for realizing a single-spin readout method with relaxed magnetic field and temperature requirements compared with spin-dependent tunnelling, enabling donor-based technologies such as quantum sensing.

Single atom devices by ion implantation

To expand the capabilities of semiconductor devices for new functions exploiting the quantum states of single donors or other impurity atoms requires a deterministic fabrication method. Ion implantation is a standard tool of the semiconductor industry and we have developed pathways to deterministic ion implantation to address this challenge. Although ion straggling limits the precision with which atoms can be positioned, for single atom devices it is possible to use post-implantation techniques to locate favourably placed atoms in devices for control and readout. However, large-scale devices will require improved precision. We examine here how the method of ion beam induced charge, already demonstrated for the deterministic ion implantation of 14 keV P donor atoms in silicon, can be used to implant a non-Poisson distribution of ions in silicon. Further, we demonstrate the method can be developed to higher precision by the incorporation of new deterministic ion implantation strategies that employ on-chip detectors with internal charge gain. In a silicon device we show a pulse height spectrum for 14 keV P ion impact that shows an internal gain of 3 that has the potential of allowing deterministic implantation of sub-14 keV P ions with reduced straggling.

Spectroscopy of single Pr3+ ion in LaF3 crystal at 1.5 K

Optical read-out and manipulation of the nuclear spin state of single rare-earth ions doped in a crystal enable the large-scale storage and the transport of quantum information. Here, we report the photo-luminescence excitation spectroscopy results of single Pr(3+) ions in a bulk crystal of LaF3 at 1.5 K. In a bulk sample, the signal from a single ion at the focus is often hidden under the background signal originating from numerous out-of-focus ions in the entire sample. To combine with a homemade cryogenic confocal microscope, we developed a reflecting objective that works in superfluid helium with a numerical aperture of 0.99, which increases the signal by increasing the solid angle of collection to 1.16π and reduces the background by decreasing the focal volume. The photo-luminescence excitation spectrum of single Pr(3+) was measured at a wing of the spectral line of the (3)H4 → (3)P0 transition at 627.33 THz (477.89 nm). The spectrum of individual Pr(3+) ions appears on top of the background of 60 cps as isolated peaks with intensities of 20-30 cps and full-width at half-maximum widths of approximately 3 MHz at an excitation intensity of 80 W cm(-2).

Electric tuning of direct-indirect optical transitions in silicon

Electronic band structures in semiconductors are uniquely determined by the constituent elements of the lattice. For example, bulk silicon has an indirect bandgap and it prohibits efficient light emission. Here we report the electrical tuning of the direct/indirect band optical transition in an ultrathin silicon-on-insulator (SOI) gated metal-oxide-semiconductor (MOS) light-emitting diode. A special Si/SiO2 interface formed by high-temperature annealing that shows stronger valley coupling enables us to observe phononless direct optical transition. Furthermore, by controlling the gate field, its strength can be electrically tuned to 16 times that of the indirect transition, which is nearly 800 times larger than the weak direct transition in bulk silicon. These results will therefore assist the development of both complementary MOS (CMOS)-compatible silicon photonics and the emerging "valleytronics" based on the control of the valley degree of freedom.

Optical measurement of the effect of electric fields on the nuclear spin coherence of rare-earth ions in solids

We show that the coherence properties of the nuclear spin states of rare-earth ions in solids can be manipulated by small applied electric fields. This was done by measuring the Stark effect on the nuclear quadrupole transitions of (151)Eu in Y(2)SiO(5) (YSO) using a combination of Raman heterodyne optical detection and Stark modulated quadrupole echoes to achieve high sensitivity. The measured Stark coefficients were 0.42 and 1.0 Hz cm/V for the two quadrupole transitions at 34.54 and 46.20 MHz, respectively. The long decoherence time of the nuclear spin states (25 ms) allowed us to make the measurements in very low electric fields of ∼ 10 V/cm, which produced 100% modulation of the nuclear spin echo, and to measure Stark shifts of ∼ 1 Hz or 20 ppm of the inhomogeneous linewidth.

Two-axis control of a singlet-triplet qubit with an integrated micromagnet

The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double-quantum dot with an integrated micromagnet in which the qubit basis states are the singlet state and the spin-zero triplet state of two electrons. Because of the micromagnet, the magnetic field difference ΔB between the two sides of the double dot is large enough to enable the achievement of coherent rotation of the qubit's Bloch vector around two different axes of the Bloch sphere. By measuring the decay of the quantum oscillations, the inhomogeneous spin coherence time T2* is determined. By measuring T2* at many different values of the exchange coupling J and at two different values of ΔB, we provide evidence that the micromagnet does not limit decoherence, with the dominant limits on T2* arising from charge noise and from coupling to nuclear spins.

Single-electron dynamics of an atomic silicon quantum dot on the H-Si(100)-(2×1) surface

Here we report the direct observation of single electron charging of a single atomic dangling bond (DB) on the H-Si(100)-2×1 surface. The tip of a scanning tunneling microscope is placed adjacent to the DB to serve as a single-electron sensitive charge detector. Three distinct charge states of the dangling bond--positive, neutral, and negative--are discerned. Charge state probabilities are extracted from the data, and analysis of current traces reveals the characteristic single-electron charging dynamics. Filling rates are found to decay exponentially with increasing tip-DB separation, but are not a function of sample bias, while emptying rates show a very weak dependence on tip position, but a strong dependence on sample bias, consistent with the notion of an atomic quantum dot tunnel coupled to the tip on one side and the bulk silicon on the other.

Using room temperature current noise to characterize single molecular spectra

We propose a way to use room temperature random telegraph noise to characterize single molecules adsorbed on a backgated silicon field-effect transistor. The overlap of molecule and silicon electronic wave functions generates a set of trap levels that impose their unique scattering signatures on the voltage-dependent current noise spectrum. Our results are based on numerical modeling of the current noise, obtained by coupling a density functional treatment of the trap placement within the silicon band gap, a quantum kinetic treatment of the output current, and a Monte Carlo evaluation of the trap occupancy under resonance. As an illustrative example, we show how we can extract molecule-specific "fingerprints" of four benzene-based molecules directly from a frequency-voltage colormap of the noise statistics. We argue that such a colormap carries detailed information about the trap dynamics at the Fermi energy, including the presence of correlated interactions, observed experimentally in backgated carbon nanotubes.