Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal

Incoherence-to-coherence crossover observed in charge-density-wave material 1T-TiSe2

Analogous to the condensation of Cooper pairs in superconductors, the Bose-Einstein condensation (BEC) of electron-hole pairs in semiconductors and semimetals leads to an emergence of an exotic ground state - the excitonic insulator state. In this paper, we study the electronic structure of 1T-TiSe2 utilizing angle-resolved photoemission spectroscopy and alkali-metal deposition. Alkali-metal adatoms are deposited in-situ on the sample surface, doping the system with electrons. The conduction bands of 1T-TiSe2 are thereby pushed down below the Fermi energy, which enables us to characterize its temperature dependence with precision. We found that the formation of the charge density wave (CDW) in 1T-TiSe2 at ~ 205 K is accompanied by a significant increase of the band gap, supporting the existence of excitonic pairing in the CDW state of 1T-TiSe2. More importantly, by analyzing the linewidth of the single-particle excitation spectrum, we unveiled an incoherence-to-coherence crossover at 165 K, which could be attributed to a possible exciton condensation that occurs beneath the CDW transition in 1T-TiSe2. Our results not only explain the exotic transport properties of 1T-TiSe2, but also highlight the possible existence of an excitonic condensate in this semiconducting material.

Advancing Superconductivity with Interface Engineering

The development of superconducting materials has attracted significant attention not only for their improved performance, such as high transition temperature (TC), but also for the exploration of their underlying physical mechanisms. Recently, considerable efforts have been focused on interfaces of materials, a distinct category capable of inducing superconductivity at non-superconducting material interfaces or augmenting the TC at the interface between a superconducting material and a non-superconducting material. Here, two distinct types of interfaces along with their unique characteristics are reviewed: interfacial superconductivity and interface-enhanced superconductivity, with a focus on the crucial factors and potential mechanisms responsible for enhancing superconducting performance. A series of materials systems is discussed, encompassing both historical developments and recent progress from the perspectives of technical innovations and the exploration of new material classes. The overarching goal is to illuminate pathways toward achieving high TC, expanding the potential of superconducting parameters across interfaces, and propelling superconductivity research toward practical, high-temperature applications.

Nanoscale inhomogeneity and the evolution of correlation strength in FeSe[Formula: see text]S[Formula: see text]

We report a comprehensive study of the nanoscale inhomogeneity and disorder on the thermoelectric properties of FeSe[Formula: see text]S[Formula: see text] ([Formula: see text]) single crystals and the evolution of correlation strength with S substitution. A hump-like feature in temperature-dependent thermpower is enhanced for x = 0.12 and 0.14 in the nematic region with increasing in orbital-selective electronic correlations, which is strongly suppressed across the nematic critical point and for higher S content. Nanoscale Se/S atom disorder in the tetrahedral surroundings of Fe atoms is confirmed by scanning transmission electron microscopy measurements, providing an insight into the nanostructural details and the evolution of correlation strength in FeSe[Formula: see text]S[Formula: see text].

Spectroscopic evidence of superconductivity pairing at 83 K in single-layer FeSe/SrTiO3 films

Single-layer FeSe films grown on the SrTiO₃ substrate (FeSe/STO) have attracted much attention because of their possible record-high superconducting critical temperature (T_c) and distinct electronic structures. However, it has been under debate on how high its T_c can really reach due to the inconsistency of the results from different measurements. Here we report spectroscopic evidence of superconductivity pairing at 83 K in single-layer FeSe/STO films. By preparing high-quality single-layer FeSe/STO films, we observe strong superconductivity-induced Bogoliubov back-bending bands that extend to rather high binding energy ~ 100 meV by high-resolution angle-resolved photoemission measurements. They provide a new definitive benchmark of superconductivity pairing that is directly observed up to 83 K. Moreover, we find that the pairing state can be further divided into two temperature regions. These results indicate that either T_c as high as 83 K is achievable, or there is a pseudogap formation from superconductivity fluctuation in single-layer FeSe/STO films.

How high the superconducting transition temperature can reach in single layer FeSe/SrTiO₃ films has been under debate. Here, the authors use Bogoliubov back-bending bands as a benchmark and demonstrate that superconductivity pairing can be realized up to 83 K in this system.

Metal-Insulator Transition and Emergent Gapped Phase in the Surface-Doped 2D Semiconductor 2H-MoTe_{2}

Artificially created two-dimensional (2D) interfaces or structures are ideal for seeking exotic phase transitions due to their highly tunable carrier density and interfacially enhanced many-body interactions. Here, we report the discovery of a metal-insulator transition (MIT) and an emergent gapped phase in the metal-semiconductor interface that is created in 2H-MoTe_{2} via alkali-metal deposition. Using angle-resolved photoemission spectroscopy, we found that the electron-phonon coupling is strong at the interface as characterized by a clear observation of replica shake-off bands. Such strong electron-phonon coupling interplays with disorder scattering, leading to an Anderson localization of polarons which could explain the MIT. The domelike emergent gapped phase could then be attributed to a polaron extended state or phonon-mediated superconductivity. Our results demonstrate the capability of alkali-metal deposition as an effective method to enhance the many-body interactions in 2D semiconductors. The surface-doped 2H-MoTe_{2} is a promising candidate for realizing polaronic insulator and high-T_{c} superconductivity.

Superconductivity enhancement in FeSe/SrTiO3: a review from the perspective of electron-phonon coupling

Single-layer FeSe films grown on SrTiO3, with the highest superconducting transition temperature (TC) among all the iron-based superconductors, serves as an ideal platform for studying the microscopic mechanisms of high-TCsuperconductivity. The significant role of interfacial coupling has been widely recognized, while the precise nature of theTCenhancement remains open. In this review, we focus on the investigations of the interfacial coupling in FeSe/SrTiO3from the perspective of electron-phonon coupling (EPC). The main content will include an overview of the experimental measurements associated with different theoretical models and arguments about the EPC. Especially, besides the discussions of EPC based on the measurements of electronic states, we will emphasize the analyses based on phonon measurements. A uniform picture about the nature of the EPC and its relation to theTCenhancement in FeSe/SrTiO3has still not achieved, which should be the key for further studies aiming to the in-depth understanding of high-TCsuperconductivity and the discovery of new superconductors with even enhancedTC.

Diamagnetic Response of Potassium-Adsorbed Multilayer FeSe Film

Intrigued by the discovery of high-temperature superconductivity in a single unit-cell layer of FeSe film on SrTiO_{3}, researchers recently found large superconductinglike energy gaps in K-adsorbed multilayer FeSe films by angle-resolved photoemission and scanning tunneling spectroscopy. However, the existence and nature of the high-temperature superconductivity inferred by the spectroscopic studies has not been investigated by measurements of zero resistance or the Meissner effect due to the fragility of K atoms in air. Using a self-developed multifunctional scanning tunneling microscope, we succeed in observing the diamagnetic response of K-adsorbed multilayer FeSe films, and thus find a dome-shaped relation between the critical temperature (T_{c}) and K coverage. Intriguingly, T_{c} exhibits an approximately linear dependence on the superfluid density in the whole K adsorbed region. Moreover, the quadratic low-temperature variation in the London penetration depth indicates a sign-reversal order parameter. These results provide compelling information towards further understanding of the high-temperature superconductivity in FeSe-derived superconductors.

Correlation effect on the electronic properties of pair-checkerboard AFM monolayer FeSe: a first-principles study

We presented a study of the influence of on-site Coulomb correlation U and Hund coupling J on the electronic properties of monolayer FeSe in a pair-checkerboard antiferromagnetic (PAFM) state based on Hubbard-corrected density functional theory (DFT  +  U). The results demonstrated the Hubbard-U have a strong influence on the electronic bands and lattice structure of monolayer FeSe in PAFM state. The in-plane lattice constant changes under U  >  1.85 eV has been identified under full structure optimization. Furthermore, the Hund coupling J has significant influence on the electronic bands and exhibits a remarkable orbital selective behavior at U  =  0. Additionally, our results also demonstrated the Hund coupling J has a weaker effect on electronic properties of FeSe when U gets larger. These results are useful for elucidating the possible role of correlation strength on the electronics band and magnetic ground state of monolayer FeSe.

Giant thermoelectric power factor in ultrathin FeSe superconductor

The thermoelectric effect is attracting a renewed interest as a concept for energy harvesting technologies. Nanomaterials have been considered a key to realize efficient thermoelectric conversions owing to the low dimensional charge and phonon transports. In this regard, recently emerging two-dimensional materials could be promising candidates with novel thermoelectric functionalities. Here we report that FeSe ultrathin films, a high-T_c superconductor (T_c; superconducting transition temperature), exhibit superior thermoelectric responses. With decreasing thickness d, the electrical conductivity increases accompanying the emergence of high-T_c superconductivity; unexpectedly, the Seebeck coefficient α shows a concomitant increase as a result of the appearance of two-dimensional natures. When d is reduced down to ~1 nm, the thermoelectric power factor at 50 K and room temperature reach unprecedented values as high as 13,000 and 260 μW cm⁻¹ K⁻², respectively. The large thermoelectric effect in high T_c superconductors indicates the high potential of two-dimensional layered materials towards multi-functionalization.

In an effort to optimize the performance of two-dimensional materials for thermoelectric generation, compounds with advantageous intrinsic properties must be identified. Here, the authors report large thermoelectric effect in ultrathin FeSe thin films with high T_c superconductivity.

Enhanced Superconducting State in FeSe/SrTiO_{3} by a Dynamic Interfacial Polaron Mechanism

The observation of substantially enhanced superconductivity of single-layer FeSe films on SrTiO_{3} has stimulated intensive research interest. At present, conclusive experimental data on the corresponding electron-boson interaction is still missing. Here we use inelastic electron scattering spectroscopy and angle resolved photoemission spectroscopy to show that the electrons in these systems are dressed by the strongly polarized lattice distortions of the SrTiO_{3}, and the indispensable nonadiabatic nature of such a coupling leads to the formation of dynamic interfacial polarons. Furthermore, the collective motion of the polarons results in a polaronic plasmon mode, which is unambiguously correlated with the surface phonons of SrTiO_{3} in the presence of the FeSe films. A microscopic model is developed showing that the interfacial polaron-polaron interaction leads to the superconductivity enhancement.

Role of Electric Fields on Enhanced Electron Correlation in Surface-Doped FeSe

Electron-doped high-T_{c} FeSe reportedly has a strong electron correlation that is enhanced with doping. It has been noticed that significant electric fields exist inevitably between FeSe and external donors along with electron transfer. However, the effects of such fields on the electron correlation are yet to be explored. Here we study potassium- (K-) dosed FeSe layers using density-functional theory combined with dynamical mean-field theory to investigate the roles of such electric fields on the strength of the electron correlation. We find, very interestingly, that the electronic potential-energy difference between the topmost Se and Fe atomic layers, generated by local electric fields of ionized K atoms, weakens the Se-mediated hopping between Fe d orbitals. Since it is the dominant hopping channel in FeSe, its reduction narrows the Fe d bands near the Fermi level, enhancing the electron correlation. This effect is orbital dependent and occurs in the topmost FeSe layer only. We also find the K dosing may increase the Se height, enhancing the electron correlation further. These results shed new light on the comprehensive study of high-T_{c} FeSe and other low-dimensional systems.

Direct imaging of electron transfer and its influence on superconducting pairing at FeSe/SrTiO3 interface

The exact mechanism responsible for the significant enhancement of the superconducting transition temperature (Tc) of monolayer iron selenide (FeSe) films on SrTiO3 (STO) over that of bulk FeSe is an open issue. We present the results of a coordinated study of electrical transport, low temperature electron energy-loss spectroscopy (EELS), and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) measurements on FeSe/STO films of different thicknesses. HAADF-STEM imaging together with EELS mapping across the FeSe/STO interface shows direct evidence of electrons transferred from STO to the FeSe layer. The transferred electrons were found to accumulate within the first two atomic layers of the FeSe films near the STO substrate. An additional Se layer is also resolved to reside between the FeSe film and the TiO x -terminated STO substrate. Our transport results found that a positive backgate applied from STO is particularly effective in enhancing Tc of the films while minimally changing the carrier density. This increase in Tc is due to the positive backgate that "pulls" the transferred electrons in FeSe films closer to the interface and thus enhances their coupling to interfacial phonons and also the electron-electron interaction within FeSe films.

Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

The electronic structure of thin films of FeTe grown on Bi₂Te₃ is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe_1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi₂Te₃ in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film's electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film's high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

How Correlated is the FeSe/SrTiO_{3} System?

Recent observation of ∼10 times higher critical temperature in a FeSe monolayer compared with its bulk phase has drawn a great deal of attention because the electronic structure in the monolayer phase appears to be different than bulk FeSe. Using a combination of density functional theory and dynamical mean field theory, we find electronic correlations have important effects on the predicted atomic-scale geometry and the electronic structure of the monolayer FeSe on SrTiO_{3}. The electronic correlations are dominantly controlled by the Se-Fe-Se angle either in the bulk phase or the monolayer phase. But the angle sensitivity increases and the orbital differentiation decreases in the monolayer phase compared to the bulk phase. The correlations are more dependent on Hund's J than Hubbard U. The observed orbital selective incoherence to coherence crossover with temperature confirms the Hund's metallic nature of the monolayer FeSe. We also find electron doping by oxygen vacancies in SrTiO_{3} increases the correlation strength, especially in the d_{xy} orbital by reducing the Se-Fe-Se angle.

High-temperature superconductivity in one-unit-cell FeSe films

Since the dramatic enhancement of the superconducting transition temperature (T _c) was reported in a one-unit-cell FeSe film grown on a SrTiO₃ substrate (1-UC FeSe/STO) by molecular beam epitaxy (MBE), related research on this system has become a new frontier in condensed matter physics. In this paper, we present a brief review on this rapidly developing field, mainly focusing on the superconducting properties of 1-UC FeSe/STO. Experimental evidence for high-temperature superconductivity in 1-UC FeSe/STO, including direct evidence revealed by transport and diamagnetic measurements, as well as other evidence from scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), are overviewed. The potential mechanisms of the enhanced superconductivity are also discussed. There are accumulating arguments to suggest that the strengthened Cooper pairing in 1-UC FeSe/STO originates from the interface effects, specifically the charge transfer and coupling to phonon modes in the TiO₂ plane. The study of superconductivity in 1-UC FeSe/STO not only sheds new light on the mechanism of high-temperature superconductors with layered structures, but also provides an insight into the exploration of new superconductors by interface engineering.

Ubiquitous strong electron-phonon coupling at the interface of FeSe/SrTiO3

The observation of replica bands in single-unit-cell FeSe on SrTiO₃ (STO)(001) by angle-resolved photoemission spectroscopy (ARPES) has led to the conjecture that the coupling between FeSe electrons and the STO phonons are responsible for the enhancement of T_c over other FeSe-based superconductors. However the recent observation of a similar superconducting gap in single-unit-cell FeSe/STO(110) raised the question of whether a similar mechanism applies. Here we report the ARPES study of the electronic structure of FeSe/STO(110). Similar to the results in FeSe/STO(001), clear replica bands are observed. We also present a comparative study of STO(001) and STO(110) bare surfaces, and observe similar replica bands separated by approximately the same energy, indicating this coupling is a generic feature of the STO surfaces and interfaces. Our findings suggest that the large superconducting gaps observed in FeSe films grown on different STO surface terminations are likely enhanced by a common mechanism.

Whether electron–phonon coupling is a generic feature in FeSe/SrTiO₃ to enhance superconductivity remains unclear. Here, Zhang et al. report replica bands in FeSe/SrTiO₃(110), suggesting a common mechanism in FeSe on SrTiO₃ with different surface terminations.

Enhanced superconductivity in surface-electron-doped iron pnictide Ba(Fe1.94Co0.06)2As2

The superconducting transition temperature (T_C) in a FeSe monolayer on SrTiO₃ is enhanced up to 100 K (refs ,,,). High T_C is also found in bulk iron chalcogenides with similar electronic structure to that of monolayer FeSe, which suggests that higher T_C may be achieved through electron doping, pushing the Fermi surface (FS) topology towards leaving only electron pockets. Such an observation, however, has been limited to chalcogenides, and is in contrast to the iron pnictides, for which the maximum T_C is achieved with both hole and electron pockets forming considerable FS nesting instability. Here, we report angle-resolved photoemission characterization revealing a monotonic increase of T_C from 24 to 41.5 K upon surface doping on optimally doped Ba(Fe_1-xCo_x)₂As₂. The doping changes the overall FS topology towards that of chalcogenides through a rigid downward band shift. Our findings suggest that higher electron doping and concomitant changes in FS topology are favourable conditions for the superconductivity, not only for iron chalcogenides, but also for iron pnictides.