1
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Onizhuk M, Wang YX, Nagura J, Clerk AA, Galli G. Understanding Central Spin Decoherence Due to Interacting Dissipative Spin Baths. PHYSICAL REVIEW LETTERS 2024; 132:250401. [PMID: 38996232 DOI: 10.1103/physrevlett.132.250401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2023] [Revised: 04/30/2024] [Accepted: 05/20/2024] [Indexed: 07/14/2024]
Abstract
We propose a new approach to simulate the decoherence of a central spin coupled to an interacting dissipative spin bath with cluster-correlation expansion techniques. We benchmark the approach on generic 1D and 2D spin baths and find excellent agreement with numerically exact simulations. Our calculations show a complex interplay between dissipation and coherent spin exchange, leading to increased central spin coherence in the presence of fast dissipation. Finally, we model near-surface nitrogen-vacancy centers in diamond and show that accounting for bath dissipation is crucial to understanding their decoherence. Our method can be applied to a variety of systems and provides a powerful tool to investigate spin dynamics in dissipative environments.
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Affiliation(s)
| | | | | | | | - Giulia Galli
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, USA
- Materials Science Division and Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, USA
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2
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Davidsson J, Onizhuk M, Vorwerk C, Galli G. Discovery of atomic clock-like spin defects in simple oxides from first principles. Nat Commun 2024; 15:4812. [PMID: 38844443 PMCID: PMC11156963 DOI: 10.1038/s41467-024-49057-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Accepted: 05/17/2024] [Indexed: 06/09/2024] Open
Abstract
Virtually noiseless due to the scarcity of spinful nuclei in the lattice, simple oxides hold promise as hosts of solid-state spin qubits. However, no suitable spin defect has yet been found in these systems. Using high-throughput first-principles calculations, we predict spin defects in calcium oxide with electronic properties remarkably similar to those of the NV center in diamond. These defects are charged complexes where a dopant atom - Sb, Bi, or I - occupies the volume vacated by adjacent cation and anion vacancies. The predicted zero phonon line shows that the Bi complex emits in the telecommunication range, and the computed many-body energy levels suggest a viable optical cycle required for qubit initialization. Notably, the high-spin nucleus of each dopant strongly couples to the electron spin, leading to many controllable quantum levels and the emergence of atomic clock-like transitions that are well protected from environmental noise. Specifically, the Hanh-echo coherence time increases beyond seconds at the clock-like transition in the defect with 209Bi. Our results pave the way to designing quantum states with long coherence times in simple oxides, making them attractive platforms for quantum technologies.
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Affiliation(s)
- Joel Davidsson
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83, Linköping, Sweden.
| | - Mykyta Onizhuk
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA.
| | - Christian Vorwerk
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA
| | - Giulia Galli
- Pritzker School of Molecular Engineering and Department of Chemistry, University of Chicago, Chicago, IL, 60637, USA.
- Materials Science Division and Center for Molecular Engineering, Argonne National Laboratory, Lemont, IL, 60439, USA.
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3
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Lew CTK, Sewani VK, Iwamoto N, Ohshima T, McCallum JC, Johnson BC. All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide. PHYSICAL REVIEW LETTERS 2024; 132:146902. [PMID: 38640398 DOI: 10.1103/physrevlett.132.146902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2023] [Accepted: 02/20/2024] [Indexed: 04/21/2024]
Abstract
Spin defects in silicon carbide are promising candidates for quantum sensing applications as they exhibit long coherence times even at room temperature. However, spin readout methods that rely on fluorescence detection can be challenging due to poor photon collection efficiency. Here, we demonstrate coherent spin control and all-electrical readout of a small ensemble of spins in a SiC junction diode using pulsed electrically detected magnetic resonance. A lock-in detection scheme based on a three stage modulation cycle is implemented, significantly enhancing the signal-to-noise ratio. This technique enabled observation of coherent spin dynamics, specifically Rabi spin nutation, spin dephasing, and spin decoherence. The use of these protocols for magnetometry applications is evaluated.
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Affiliation(s)
- C T-K Lew
- School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia
| | - V K Sewani
- University of New South Wales, Kensington, New South Wales 2052, Australia
| | - N Iwamoto
- National Institutes for Quantum Science and Technology, 1233 Watanuki, Takasaki 370-1292, Japan
| | - T Ohshima
- National Institutes for Quantum Science and Technology, 1233 Watanuki, Takasaki 370-1292, Japan
- Department of Materials Science, Tohoku University, 6-6-02 Aramaki-Aza, Aoba-ku, Sendai 980-8579, Japan
| | - J C McCallum
- School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia
| | - B C Johnson
- School of Science, RMIT University, VIC 3001, Australia
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4
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Yan Q, Kar S, Chowdhury S, Bansil A. The Case for a Defect Genome Initiative. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2303098. [PMID: 38195961 DOI: 10.1002/adma.202303098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Revised: 08/12/2023] [Indexed: 01/11/2024]
Abstract
The Materials Genome Initiative (MGI) has streamlined the materials discovery effort by leveraging generic traits of materials, with focus largely on perfect solids. Defects such as impurities and perturbations, however, drive many attractive functional properties of materials. The rich tapestry of charge, spin, and bonding states hosted by defects are not accessible to elements and perfect crystals, and defects can thus be viewed as another class of "elements" that lie beyond the periodic table. Accordingly, a Defect Genome Initiative (DGI) to accelerate functional defect discovery for energy, quantum information, and other applications is proposed. First, major advances made under the MGI are highlighted, followed by a delineation of pathways for accelerating the discovery and design of functional defects under the DGI. Near-term goals for the DGI are suggested. The construction of open defect platforms and design of data-driven functional defects, along with approaches for fabrication and characterization of defects, are discussed. The associated challenges and opportunities are considered and recent advances towards controlled introduction of functional defects at the atomic scale are reviewed. It is hoped this perspective will spur a community-wide interest in undertaking a DGI effort in recognition of the importance of defects in enabling unique functionalities in materials.
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Affiliation(s)
- Qimin Yan
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Swastik Kar
- Department of Physics, Northeastern University, Boston, MA 02115, USA
- Department of Chemical Engineering, Northeastern University, Boston, MA 02115, USA
| | - Sugata Chowdhury
- Department of Physics and Astrophysics, Howard University, Washington, DC 20059, USA
| | - Arun Bansil
- Department of Physics, Northeastern University, Boston, MA 02115, USA
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5
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Wojnar MK, Kundu K, Kairalapova A, Wang X, Ozarowski A, Berkelbach TC, Hill S, Freedman DE. Ligand field design enables quantum manipulation of spins in Ni 2+ complexes. Chem Sci 2024; 15:1374-1383. [PMID: 38274078 PMCID: PMC10806831 DOI: 10.1039/d3sc04919a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2023] [Accepted: 12/02/2023] [Indexed: 01/27/2024] Open
Abstract
Creating the next generation of quantum systems requires control and tunability, which are key features of molecules. To design these systems, one must consider the ground-state and excited-state manifolds. One class of systems with promise for quantum sensing applications, which require water solubility, are d8 Ni2+ ions in octahedral symmetry. Yet, most Ni2+ complexes feature large zero-field splitting, precluding manipulation by commercial microwave sources due to the relatively large spin-orbit coupling constant of Ni2+ (630 cm-1). Since low lying excited states also influence axial zero-field splitting, D, a combination of strong field ligands and rigidly held octahedral symmetry can ameliorate these challenges. Towards these ends, we performed a theoretical and computational analysis of the electronic and magnetic structure of a molecular qubit, focusing on the impact of ligand field strength on D. Based on those results, we synthesized 1, [Ni(ttcn)2](BF4)2 (ttcn = 1,4,7-trithiacyclononane), which we computationally predict will have a small D (Dcalc = +1.15 cm-1). High-field high-frequency electron paramagnetic resonance (EPR) data yield spin Hamiltonian parameters: gx = 2.1018(15), gx = 2.1079(15), gx = 2.0964(14), D = +0.555(8) cm-1 and E = +0.072(5) cm-1, which confirm the expected weak zero-field splitting. Dilution of 1 in the diamagnetic Zn analogue, [Ni0.01Zn0.99(ttcn)2](BF4)2 (1') led to a slight increase in D to ∼0.9 cm-1. The design criteria in minimizing D in 1via combined computational and experimental methods demonstrates a path forward for EPR and optical addressability of a general class of S = 1 spins.
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Affiliation(s)
- Michael K Wojnar
- Department of Chemistry, Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA
| | - Krishnendu Kundu
- National High Magnetic Field Laboratory Tallahassee Florida 32310 USA
| | | | - Xiaoling Wang
- National High Magnetic Field Laboratory Tallahassee Florida 32310 USA
| | - Andrew Ozarowski
- National High Magnetic Field Laboratory Tallahassee Florida 32310 USA
| | | | - Stephen Hill
- National High Magnetic Field Laboratory Tallahassee Florida 32310 USA
- Department of Physics, Florida State University Florida 32306 USA
| | - Danna E Freedman
- Department of Chemistry, Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA
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6
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Castelletto S, Lew CTK, Lin WX, Xu JS. Quantum systems in silicon carbide for sensing applications. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:014501. [PMID: 38029424 DOI: 10.1088/1361-6633/ad10b3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 11/29/2023] [Indexed: 12/01/2023]
Abstract
This paper summarizes recent studies identifying key qubit systems in silicon carbide (SiC) for quantum sensing of magnetic, electric fields, and temperature at the nano and microscale. The properties of colour centres in SiC, that can be used for quantum sensing, are reviewed with a focus on paramagnetic colour centres and their spin Hamiltonians describing Zeeman splitting, Stark effect, and hyperfine interactions. These properties are then mapped onto various methods for their initialization, control, and read-out. We then summarised methods used for a spin and charge state control in various colour centres in SiC. These properties and methods are then described in the context of quantum sensing applications in magnetometry, thermometry, and electrometry. Current state-of-the art sensitivities are compiled and approaches to enhance the sensitivity are proposed. The large variety of methods for control and read-out, combined with the ability to scale this material in integrated photonics chips operating in harsh environments, places SiC at the forefront of future quantum sensing technology based on semiconductors.
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Affiliation(s)
- S Castelletto
- School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia
| | - C T-K Lew
- School of Physics, The University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, People's Republic of China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, People's Republic of China
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7
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Zhang C, Gygi F, Galli G. Engineering the formation of spin-defects from first principles. Nat Commun 2023; 14:5985. [PMID: 37752139 PMCID: PMC10522650 DOI: 10.1038/s41467-023-41632-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/24/2023] [Accepted: 09/08/2023] [Indexed: 09/28/2023] Open
Abstract
The full realization of spin qubits for quantum technologies relies on the ability to control and design the formation processes of spin defects in semiconductors and insulators. We present a computational protocol to investigate the synthesis of point-defects at the atomistic level, and we apply it to the study of a promising spin-qubit in silicon carbide, the divacancy (VV). Our strategy combines electronic structure calculations based on density functional theory and enhanced sampling techniques coupled with first principles molecular dynamics. We predict the optimal annealing temperatures for the formation of VVs at high temperature and show how to engineer the Fermi level of the material to optimize the defect's yield for several polytypes of silicon carbide. Our results are in excellent agreement with available experimental data and provide novel atomistic insights into point defect formation and annihilation processes as a function of temperature.
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Affiliation(s)
- Cunzhi Zhang
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA
| | - Francois Gygi
- Department of Computer Science, University of California Davis, Davis, CA, USA
| | - Giulia Galli
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA.
- Department of Chemistry, University of Chicago, Chicago, IL, USA.
- Materials Science Division and Center for Molecular Engineering, Argonne National Laboratory, Lemont, IL, USA.
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8
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Zhou F, Jiang Z, Liang H, Ru S, Bettiol AA, Gao W. DC Magnetic Field Sensitivity Optimization of Spin Defects in Hexagonal Boron Nitride. NANO LETTERS 2023. [PMID: 37364230 DOI: 10.1021/acs.nanolett.3c01881] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/28/2023]
Abstract
Spin defects existing in van der Waals materials attract wide attention thanks to their natural advantages for in situ quantum sensing, especially the negatively charged boron vacancy (VB-) centers in hexagonal boron nitride (h-BN). Here we systematically investigate the laser and microwave power broadening in continuous-wave optically detected magnetic resonance (ODMR) of the VB- ensemble in h-BN, by revealing the behaviors of ODMR contrast and line width as a function of the laser and microwave powers. The experimental results are well explained by employing a two-level simplified model of ODMR dynamics. Furthermore, with optimized power, the DC magnetic field sensitivity of VB- ensemble is significantly improved up to 2.87 ± ± 0.07 μT/Hz. Our results provide important suggestions for further applications of VB- centers in quantum information processing and ODMR-based quantum sensing.
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Affiliation(s)
- Feifei Zhou
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Zhengzhi Jiang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Haidong Liang
- Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Shihao Ru
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Andrew A Bettiol
- Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
- Centre for Quantum Technologies, National University of Singapore, Singapore 117543, Singapore
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9
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Yan FF, Wang JF, He ZX, Li Q, Lin WX, Zhou JY, Xu JS, Li CF, Guo GC. Magnetic-field-dependent spin properties of divacancy defects in silicon carbide. NANOSCALE 2023; 15:5300-5304. [PMID: 36810581 DOI: 10.1039/d2nr06624f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In recent years, spin defects in silicon carbide have become promising platforms for quantum sensing, quantum information processing and quantum networks. It has been shown that their spin coherence times can be dramatically extended with an external axial magnetic field. However, little is known about the effect of magnetic-angle-dependent coherence time, which is an essential complement to defect spin properties. Here, we investigate the optically detected magnetic resonance (ODMR) spectra of divacancy spins in silicon carbide with a magnetic field orientation. The ODMR contrast decreases as the off-axis magnetic field strength increases. We then study the coherence times of divacancy spins in two different samples with magnetic field angles, and both of the coherence times decrease with the angle. The experiments pave the way for all-optical magnetic field sensing and quantum information processing.
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Affiliation(s)
- Fei-Fei Yan
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- College of Physics, Sichuan University, Chengdu, Sichuan 610065, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zhen-Xuan He
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Ji-Yang Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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10
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Utilizing photonic band gap in triangular silicon carbide structures for efficient quantum nanophotonic hardware. Sci Rep 2023; 13:4112. [PMID: 36914853 PMCID: PMC10011533 DOI: 10.1038/s41598-023-31362-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Accepted: 03/10/2023] [Indexed: 03/16/2023] Open
Abstract
Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing, and sensing rely on the efficient collection of color center emission into a single optical mode. Recent hardware development in this platform has focused on angle-etching processes that preserve emitter properties and produce triangularly shaped devices. However, little is known about the light propagation in this geometry. We explore the formation of photonic band gap in structures with a triangular cross-section, which can be used as a guiding principle in developing efficient quantum nanophotonic hardware in silicon carbide. Furthermore, we propose applications in three areas: the TE-pass filter, the TM-pass filter, and the highly reflective photonic crystal mirror, which can be utilized for efficient collection and propagating mode selection of light emission.
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11
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Koppenhöfer M, Padgett C, Cady JV, Dharod V, Oh H, Bleszynski Jayich AC, Clerk AA. Single-Spin Readout and Quantum Sensing Using Optomechanically Induced Transparency. PHYSICAL REVIEW LETTERS 2023; 130:093603. [PMID: 36930901 DOI: 10.1103/physrevlett.130.093603] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2022] [Accepted: 02/01/2023] [Indexed: 06/18/2023]
Abstract
Solid-state spin defects are promising quantum sensors for a large variety of sensing targets. Some of these defects couple appreciably to strain in the host material. We propose to use this strain coupling for mechanically mediated dispersive single-shot spin readout by an optomechanically induced transparency measurement. Surprisingly, the estimated measurement times for negatively charged silicon-vacancy defects in diamond are an order of magnitude shorter than those for single-shot optical fluorescence readout. Our scheme can also be used for general parameter-estimation metrology and offers a higher sensitivity than conventional schemes using continuous position detection.
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Affiliation(s)
- Martin Koppenhöfer
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
| | - Carl Padgett
- Department of Physics, University of California Santa Barbara, Santa Barbara, California 93106, USA
| | - Jeffrey V Cady
- Department of Physics, University of California Santa Barbara, Santa Barbara, California 93106, USA
- Systems and Processes Engineering Corporation, Austin, Texas 78737, USA
| | - Viraj Dharod
- Department of Physics, University of California Santa Barbara, Santa Barbara, California 93106, USA
| | - Hyunseok Oh
- Department of Physics, University of California Santa Barbara, Santa Barbara, California 93106, USA
| | - Ania C Bleszynski Jayich
- Department of Physics, University of California Santa Barbara, Santa Barbara, California 93106, USA
| | - A A Clerk
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
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12
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Janicka K, Wysocki AL, Park K. Computational Insights into Electronic Excitations, Spin-Orbit Coupling Effects, and Spin Decoherence in Cr(IV)-Based Molecular Qubits. J Phys Chem A 2022; 126:8007-8020. [PMID: 36269140 DOI: 10.1021/acs.jpca.2c06854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
The great success of point defects and dopants in semiconductors for quantum information processing has invigorated a search for molecules with analogous properties. Flexibility and tunability of desired properties in a large chemical space have great advantages over solid-state systems. The properties analogous to point defects were demonstrated in the Cr(IV)-based molecular family, Cr(IV)(aryl)4, where the electronic spin states were optically initialized, read out, and controlled. Despite this kick-start, there is still a large room for enhancing properties crucial for molecular qubits. Here, we provide computational insights into key properties of the Cr(IV)-based molecules aimed at assisting the chemical design of efficient molecular qubits. Using the multireference ab initio methods, we investigate the electronic states of Cr(IV)(aryl)4 molecules with slightly different ligands, showing that the zero-phonon line energies agree with the experiment and that the excited spin-triplet and spin-singlet states are highly sensitive to small chemical perturbations. By adding spin-orbit interaction, we find that the sign of the uniaxial zero-field splitting (ZFS) parameter is negative for all considered molecules and discuss optically induced spin initialization via non-radiative intersystem crossing. We quantify (super)hyperfine coupling to the 53Cr nuclear spin and to the 13C and 1H nuclear spins, and we discuss electron spin decoherence. We show that the splitting or broadening of the electronic spin sub-levels due to superhyperfine interaction with 1H nuclear spins decreases by an order of magnitude when the molecules have a substantial transverse ZFS parameter.
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Affiliation(s)
- Karolina Janicka
- Department of Physics, Virginia Tech, Blacksburg, Virginia24061, United States
| | | | - Kyungwha Park
- Department of Physics, Virginia Tech, Blacksburg, Virginia24061, United States
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13
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Liu W, Ivády V, Li ZP, Yang YZ, Yu S, Meng Y, Wang ZA, Guo NJ, Yan FF, Li Q, Wang JF, Xu JS, Liu X, Zhou ZQ, Dong Y, Chen XD, Sun FW, Wang YT, Tang JS, Gali A, Li CF, Guo GC. Coherent dynamics of multi-spin V[Formula: see text] center in hexagonal boron nitride. Nat Commun 2022; 13:5713. [PMID: 36175507 PMCID: PMC9522675 DOI: 10.1038/s41467-022-33399-2] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/03/2021] [Accepted: 09/14/2022] [Indexed: 11/09/2022] Open
Abstract
Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sensors in nanolayered-devices. Understanding the coherent dynamics of microwave driven spins in hBN is of crucial importance for advancing these emerging new technologies. Here, we demonstrate and study the Rabi oscillation and related phenomena of a negatively charged boron vacancy (V[Formula: see text]) spin ensemble in hBN. We report on different dynamics of the V[Formula: see text] spins at weak and strong magnetic fields. In the former case the defect behaves like a single electron spin system, while in the latter case it behaves like a multi-spin system exhibiting multiple-frequency dynamical oscillation as beat in the Ramsey fringes. We also carry out theoretical simulations for the spin dynamics of V[Formula: see text] and reveal that the nuclear spins can be driven via the strong electron nuclear coupling existing in V[Formula: see text] center, which can be modulated by the magnetic field and microwave field.
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Affiliation(s)
- Wei Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Viktor Ivády
- Max-Planck-Institut für Physik komplexer Systeme, Nöthnitzer Street 38, D-01187 Dresden, Germany
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
- Wigner Research Centre for Physics, PO Box 49, H-1525 Budapest, Hungary
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Shang Yu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yu Meng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Nai-Jie Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Fei-Fei Yan
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Xiao Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Zong-Quan Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yang Dong
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Xiang-Dong Chen
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Fang-Wen Sun
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Adam Gali
- Wigner Research Centre for Physics, PO Box 49, H-1525 Budapest, Hungary
- Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rakpart 3., H-1111 Budapest, Hungary
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
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14
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Murzakhanov FF, Mamin GV, Orlinskii SB, Gerstmann U, Schmidt WG, Biktagirov T, Aharonovich I, Gottscholl A, Sperlich A, Dyakonov V, Soltamov VA. Electron-Nuclear Coherent Coupling and Nuclear Spin Readout through Optically Polarized V B- Spin States in hBN. NANO LETTERS 2022; 22:2718-2724. [PMID: 35357842 DOI: 10.1021/acs.nanolett.1c04610] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the VB- spin with a characteristic decay time Tcoh = 15 μs, close to the theoretically predicted limit of 18 μs for defects in hBN. Elongation of the coherence time up to 36 μs is demonstrated by means of the Carr-Purcell-Meiboom-Gill decoupling technique. Modulation of the Hahn-echo decay is shown to be induced by coherent coupling of the VB- spin with the three nearest 14N nuclei via a nuclear quadrupole interaction of 2.11 MHz. DFT calculation confirms that the electron-nuclear coupling is confined to the defective layer and stays almost unchanged with a transition from the bulk to the single layer.
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Affiliation(s)
| | | | | | - Uwe Gerstmann
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Wolf Gero Schmidt
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Timur Biktagirov
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Andreas Sperlich
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
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15
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Abstract
Atomic defects in solid-state materials are promising candidates as quantum bits, or qubits. New materials are actively being investigated as hosts for new defect qubits; however, there are no unifying guidelines that can quantitatively predict qubit performance in a new material. One of the most critical property of qubits is their quantum coherence. While cluster correlation expansion (CCE) techniques are useful to simulate the coherence of electron spins in defects, they are computationally expensive to investigate broad classes of stable materials. Using CCE simulations, we reveal a general scaling relation between the electron spin coherence time and the properties of qubit host materials that enables rapid and quantitative exploration of new materials hosting spin defects. Spin defect centers with long quantum coherence times (T2) are key solid-state platforms for a variety of quantum applications. Cluster correlation expansion (CCE) techniques have emerged as a powerful tool to simulate the T2 of defect electron spins in these solid-state systems with good accuracy. Here, based on CCE, we uncover an algebraic expression for T2 generalized for host compounds with dilute nuclear spin baths under a magnetic field that enables a quantitative and comprehensive materials exploration with a near instantaneous estimate of the coherence time. We investigated more than 12,000 host compounds at natural isotopic abundance and found that silicon carbide (SiC), a prominent widegap semiconductor for quantum applications, possesses the longest coherence times among widegap nonchalcogenides. In addition, more than 700 chalcogenides are shown to possess a longer T2 than SiC. We suggest potential host compounds with promisingly long T2 up to 47 ms and pave the way to explore unprecedented functional materials for quantum applications.
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16
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Anderson CP, Glen EO, Zeledon C, Bourassa A, Jin Y, Zhu Y, Vorwerk C, Crook AL, Abe H, Ul-Hassan J, Ohshima T, Son NT, Galli G, Awschalom DD. Five-second coherence of a single spin with single-shot readout in silicon carbide. SCIENCE ADVANCES 2022; 8:eabm5912. [PMID: 35108045 PMCID: PMC8809532 DOI: 10.1126/sciadv.abm5912] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2023]
Abstract
An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout, a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge conversion, whereby the defect's spin state is mapped onto a long-lived charge state. With this technique, we achieve over 80% readout fidelity without pre- or postselection, resulting in a high signal-to-noise ratio that enables us to measure long spin coherence times. Combined with pulsed dynamical decoupling sequences in an isotopically purified host material, we report single-spin T2 > 5 seconds, over two orders of magnitude greater than previously reported in this system. The mapping of these coherent spin states onto single charges unlocks both single-shot readout for scalable quantum nodes and opportunities for electrical readout via integration with semiconductor devices.
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Affiliation(s)
- Christopher P. Anderson
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
- Department of Physics, University of Chicago, Chicago, IL 60637, USA
| | - Elena O. Glen
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Cyrus Zeledon
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Alexandre Bourassa
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Yu Jin
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
| | - Yizhi Zhu
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Christian Vorwerk
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Alexander L. Crook
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
- Department of Physics, University of Chicago, Chicago, IL 60637, USA
| | - Hiroshi Abe
- National Institutes for Quantum Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Jawad Ul-Hassan
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
| | - Takeshi Ohshima
- National Institutes for Quantum Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Nguyen T. Son
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
| | - Giulia Galli
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
- Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
| | - David D. Awschalom
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
- Department of Physics, University of Chicago, Chicago, IL 60637, USA
- Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
- Corresponding author.
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17
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Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride. Nat Commun 2022; 13:618. [PMID: 35105864 PMCID: PMC8807746 DOI: 10.1038/s41467-022-28169-z] [Citation(s) in RCA: 39] [Impact Index Per Article: 19.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2021] [Accepted: 01/11/2022] [Indexed: 11/08/2022] Open
Abstract
Optically addressable solid-state spins are important platforms for quantum technologies, such as repeaters and sensors. Spins in two-dimensional materials offer an advantage, as the reduced dimensionality enables feasible on-chip integration into devices. Here, we report room-temperature optically detected magnetic resonance (ODMR) from single carbon-related defects in hexagonal boron nitride with up to 100 times stronger contrast than the ensemble average. We identify two distinct bunching timescales in the second-order intensity-correlation measurements for ODMR-active defects, but only one for those without an ODMR response. We also observe either positive or negative ODMR signal for each defect. Based on kinematic models, we relate this bipolarity to highly tuneable internal optical rates. Finally, we resolve an ODMR fine structure in the form of an angle-dependent doublet resonance, indicative of weak but finite zero-field splitting. Our results offer a promising route towards realising a room-temperature spin-photon quantum interface in hexagonal boron nitride.
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18
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Guo NJ, Liu W, Li ZP, Yang YZ, Yu S, Meng Y, Wang ZA, Zeng XD, Yan FF, Li Q, Wang JF, Xu JS, Wang YT, Tang JS, Li CF, Guo GC. Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride. ACS OMEGA 2022; 7:1733-1739. [PMID: 35071868 PMCID: PMC8771700 DOI: 10.1021/acsomega.1c04564] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2021] [Accepted: 12/21/2021] [Indexed: 05/30/2023]
Abstract
Optically addressable spin defects in wide-band-gap semiconductors as promising systems for quantum information and sensing applications have recently attracted increased attention. Spin defects in two-dimensional materials are expected to show superiority in quantum sensing due to their atomic thickness. Here, we demonstrate that an ensemble of negatively charged boron vacancies (VB -) with good spin properties in hexagonal boron nitride (hBN) can be generated by ion implantation. We carry out optically detected magnetic resonance measurements at room temperature to characterize the spin properties of ensembles of VB - defects, showing a zero-field splitting frequency of ∼3.47 GHz. We compare the photoluminescence intensity and spin properties of VB - defects generated using different implantation parameters, such as fluence, energy, and ion species. With the use of the proper parameters, we can successfully create VB - defects with a high probability. Our results provide a simple and practicable method to create spin defects in hBN, which is of great significance for realizing integrated hBN-based devices.
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Affiliation(s)
- Nai-Jie Guo
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Wei Liu
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Shang Yu
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Yu Meng
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Xiao-Dong Zeng
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Fei-Fei Yan
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Qiang Li
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
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19
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Lewis SG, Smyser KE, Eaves JD. Clock transitions guard against spin decoherence in singlet fission. J Chem Phys 2021; 155:194109. [PMID: 34800954 DOI: 10.1063/5.0069344] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Short coherence times present a primary obstacle in quantum computing and sensing applications. In atomic systems, clock transitions (CTs), formed from avoided crossings in an applied Zeeman field, can substantially increase coherence times. We show how CTs can dampen intrinsic and extrinsic sources of quantum noise in molecules. Conical intersections between two periodic potentials form CTs in electron paramagnetic resonance experiments of the spin-polarized singlet fission photoproduct. We report on a pair of CTs for a two-chromophore molecule in terms of the Zeeman field strength, molecular orientation relative to the field, and molecular geometry.
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Affiliation(s)
- Sina G Lewis
- Department of Physics, University of Colorado Boulder, Boulder, Colorado 80309, USA
| | - Kori E Smyser
- Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, USA
| | - Joel D Eaves
- Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, USA
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20
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Onizhuk M, Galli G. PyCCE: A Python Package for Cluster Correlation Expansion Simulations of Spin Qubit Dynamics. ADVANCED THEORY AND SIMULATIONS 2021. [DOI: 10.1002/adts.202100254] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Mykyta Onizhuk
- Department of Chemistry University of Chicago Chicago IL 60637 USA
| | - Giulia Galli
- Department of Chemistry University of Chicago Chicago IL 60637 USA
- Pritzker School of Molecular Engineering University of Chicago Chicago IL 60637 USA
- Materials Science Division and Center for Molecular Engineering Argonne National Laboratory Lemont IL 60439 USA
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21
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Bhang J, Ma H, Yim D, Galli G, Seo H. First-Principles Predictions of Out-of-Plane Group IV and V Dimers as High-Symmetry, High-Spin Defects in Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES 2021; 13:45768-45777. [PMID: 34541839 DOI: 10.1021/acsami.1c16988] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Hexagonal boron nitride (h-BN) has been recently found to host a variety of quantum point defects, which are promising candidates as single-photon sources for solid-state quantum nanophotonic applications. Most recently, optically addressable spin qubits in h-BN have been the focus of intensive research due to their unique potential in quantum computation, communication, and sensing. However, the number of high-symmetry, high-spin defects that are desirable for developing spin qubits in h-BN is highly limited. Here, we combine density functional theory (DFT) and quantum embedding theories to show that out-of-plane XNYi dimer defects (X, Y = C, N, P, and Si) form a new class of stable C3v spin-triplet defects in h-BN. We find that the dimer defects have a robust 3A2 ground state and 3E excited state, both of which are isolated from the h-BN bulk states. We show that 1E and 1A shelving states exist and they are positioned between the 3E and 3A2 states for all the dimer defects considered in this study. To support future experimental identification of the XNYi dimer defects, we provide extensive characterization of the defects in terms of their spin and optical properties. We predict that the zero-phonon line of the spin-triplet XNYi defects lies in the visible range (800 nm to 500 nm). We compute the zero-field splitting of the dimers' spin to range from 1.79 GHz (SiNPi0) to 29.5 GHz (CNNi0). Our results broaden the scope of high-spin defect candidates that would be useful for the development of spin-based solid-state quantum technologies in two-dimensional hexagonal boron nitride.
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Affiliation(s)
- Jooyong Bhang
- Department of Energy Systems Research and Department of Physics, Ajou University, Suwon, Gyeonggi 16499, Korea
| | - He Ma
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
| | - Donggyu Yim
- Department of Energy Systems Research and Department of Physics, Ajou University, Suwon, Gyeonggi 16499, Korea
| | - Giulia Galli
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
- Materials Science Division and Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Hosung Seo
- Department of Energy Systems Research and Department of Physics, Ajou University, Suwon, Gyeonggi 16499, Korea
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22
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Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors. NANOMATERIALS 2020; 11:nano11010072. [PMID: 33396227 PMCID: PMC7823324 DOI: 10.3390/nano11010072] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Revised: 12/26/2020] [Accepted: 12/26/2020] [Indexed: 12/31/2022]
Abstract
Color centers in silicon carbide are relevant for applications in quantum technologies as they can produce single photon sources or can be used as spin qubits and in quantum sensing applications. Here, we have applied femtosecond laser writing in silicon carbide and gallium nitride to generate vacancy-related color centers, giving rise to photoluminescence from the visible to the infrared. Using a 515 nm wavelength 230 fs pulsed laser, we produce large arrays of silicon vacancy defects in silicon carbide with a high localization within the confocal diffraction limit of 500 nm and with minimal material damage. The number of color centers formed exhibited power-law scaling with the laser fabrication energy indicating that the color centers are created by photoinduced ionization. This work highlights the simplicity and flexibility of laser fabrication of color center arrays in relevant materials for quantum applications.
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23
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Head-Marsden K, Flick J, Ciccarino CJ, Narang P. Quantum Information and Algorithms for Correlated Quantum Matter. Chem Rev 2020; 121:3061-3120. [PMID: 33326218 DOI: 10.1021/acs.chemrev.0c00620] [Citation(s) in RCA: 35] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Discoveries in quantum materials, which are characterized by the strongly quantum-mechanical nature of electrons and atoms, have revealed exotic properties that arise from correlations. It is the promise of quantum materials for quantum information science superimposed with the potential of new computational quantum algorithms to discover new quantum materials that inspires this Review. We anticipate that quantum materials to be discovered and developed in the next years will transform the areas of quantum information processing including communication, storage, and computing. Simultaneously, efforts toward developing new quantum algorithmic approaches for quantum simulation and advanced calculation methods for many-body quantum systems enable major advances toward functional quantum materials and their deployment. The advent of quantum computing brings new possibilities for eliminating the exponential complexity that has stymied simulation of correlated quantum systems on high-performance classical computers. Here, we review new algorithms and computational approaches to predict and understand the behavior of correlated quantum matter. The strongly interdisciplinary nature of the topics covered necessitates a common language to integrate ideas from these fields. We aim to provide this common language while weaving together fields across electronic structure theory, quantum electrodynamics, algorithm design, and open quantum systems. Our Review is timely in presenting the state-of-the-art in the field toward algorithms with nonexponential complexity for correlated quantum matter with applications in grand-challenge problems. Looking to the future, at the intersection of quantum information science and algorithms for correlated quantum matter, we envision seminal advances in predicting many-body quantum states and describing excitonic quantum matter and large-scale entangled states, a better understanding of high-temperature superconductivity, and quantifying open quantum system dynamics.
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Affiliation(s)
- Kade Head-Marsden
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Johannes Flick
- Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, United States
| | - Christopher J Ciccarino
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.,Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Prineha Narang
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
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24
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Liu J, Xu Z, Song Y, Wang H, Dong B, Li S, Ren J, Li Q, Rommel M, Gu X, Liu B, Hu M, Fang F. Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser. NANOTECHNOLOGY AND PRECISION ENGINEERING 2020. [DOI: 10.1016/j.npe.2020.11.003] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
Affiliation(s)
- Jiayu Liu
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
| | - Zongwei Xu
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
| | - Ying Song
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
| | - Hong Wang
- State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, Tianjin
300387, China
| | - Bing Dong
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
| | - Shaobei Li
- Tianjin Kaiprin Optoelectronic Technology Co., Ltd., Tianjin 300300, China
| | - Jia Ren
- Tianjin Kaiprin Optoelectronic Technology Co., Ltd., Tianjin 300300, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026,
China
| | - Mathias Rommel
- Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystrasse 10,
Erlangen 91058, Germany
| | - Xinhua Gu
- Tianjin Kaiprin Optoelectronic Technology Co., Ltd., Tianjin 300300, China
| | - Bowen Liu
- Ultrafast Laser Lab, Tianjin University, Tianjin 300072, China
| | - Minglie Hu
- Ultrafast Laser Lab, Tianjin University, Tianjin 300072, China
| | - Fengzhou Fang
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
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25
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Bourassa A, Anderson CP, Miao KC, Onizhuk M, Ma H, Crook AL, Abe H, Ul-Hassan J, Ohshima T, Son NT, Galli G, Awschalom DD. Entanglement and control of single nuclear spins in isotopically engineered silicon carbide. NATURE MATERIALS 2020; 19:1319-1325. [PMID: 32958880 DOI: 10.1038/s41563-020-00802-6] [Citation(s) in RCA: 31] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2020] [Accepted: 08/14/2020] [Indexed: 06/11/2023]
Abstract
Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. In this work, we demonstrate control of isolated 29Si nuclear spins in silicon carbide (SiC) to create an entangled state between an optically active divacancy spin and a strongly coupled nuclear register. We then show how isotopic engineering of SiC unlocks control of single weakly coupled nuclear spins and present an ab initio method to predict the optimal isotopic fraction that maximizes the number of usable nuclear memories. We bolster these results by reporting high-fidelity electron spin control (F = 99.984(1)%), alongside extended coherence times (Hahn-echo T2 = 2.3 ms, dynamical decoupling T2DD > 14.5 ms), and a >40-fold increase in Ramsey spin dephasing time (T2*) from isotopic purification. Overall, this work underlines the importance of controlling the nuclear environment in solid-state systems and links single photon emitters with nuclear registers in an industrially scalable material.
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Affiliation(s)
- Alexandre Bourassa
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA
| | - Christopher P Anderson
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA
- Department of Physics, University of Chicago, Chicago, IL, USA
| | - Kevin C Miao
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA
| | - Mykyta Onizhuk
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA
- Department of Chemistry, University of Chicago, Chicago, IL, USA
| | - He Ma
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA
- Department of Chemistry, University of Chicago, Chicago, IL, USA
| | - Alexander L Crook
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA
- Department of Physics, University of Chicago, Chicago, IL, USA
| | - Hiroshi Abe
- National Institutes for Quantum and Radiological Science and Technology, Gunma, Japan
| | - Jawad Ul-Hassan
- Department of Physics, Chemistry and Biology, Linköping University, Linköping, Sweden
| | - Takeshi Ohshima
- National Institutes for Quantum and Radiological Science and Technology, Gunma, Japan
| | - Nguyen T Son
- Department of Physics, Chemistry and Biology, Linköping University, Linköping, Sweden
| | - Giulia Galli
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA
- Department of Chemistry, University of Chicago, Chicago, IL, USA
- Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - David D Awschalom
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA.
- Department of Physics, University of Chicago, Chicago, IL, USA.
- Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, IL, USA.
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26
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Equilibrium calculations for plasmas of volatile halides of III, IV and VI group elements mixed with H2 and H2 + CX4 (X = H, Cl, F) relevant to PECVD of isotopic materials. J Radioanal Nucl Chem 2020. [DOI: 10.1007/s10967-020-07295-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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27
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Miao KC, Blanton JP, Anderson CP, Bourassa A, Crook AL, Wolfowicz G, Abe H, Ohshima T, Awschalom DD. Universal coherence protection in a solid-state spin qubit. Science 2020; 369:1493-1497. [PMID: 32792463 DOI: 10.1126/science.abc5186] [Citation(s) in RCA: 44] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2020] [Accepted: 07/31/2020] [Indexed: 01/07/2023]
Abstract
Decoherence limits the physical realization of qubits, and its mitigation is critical for the development of quantum science and technology. We construct a robust qubit embedded in a decoherence-protected subspace, obtained by applying microwave dressing to a clock transition of the ground-state electron spin of a silicon carbide divacancy defect. The qubit is universally protected from magnetic, electric, and temperature fluctuations, which account for nearly all relevant decoherence channels in the solid state. This culminates in an increase of the qubit's inhomogeneous dephasing time by more than four orders of magnitude (to >22 milliseconds), while its Hahn-echo coherence time approaches 64 milliseconds. Requiring few key platform-independent components, this result suggests that substantial coherence improvements can be achieved in a wide selection of quantum architectures.
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Affiliation(s)
- Kevin C Miao
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Joseph P Blanton
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.,Department of Physics, University of Chicago, Chicago, IL 60637, USA
| | - Christopher P Anderson
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.,Department of Physics, University of Chicago, Chicago, IL 60637, USA
| | - Alexandre Bourassa
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Alexander L Crook
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.,Department of Physics, University of Chicago, Chicago, IL 60637, USA
| | - Gary Wolfowicz
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.,Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Hiroshi Abe
- National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Takeshi Ohshima
- National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - David D Awschalom
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA. .,Department of Physics, University of Chicago, Chicago, IL 60637, USA.,Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
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28
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Wang JF, Yan FF, Li Q, Liu ZH, Liu H, Guo GP, Guo LP, Zhou X, Cui JM, Wang J, Zhou ZQ, Xu XY, Xu JS, Li CF, Guo GC. Coherent Control of Nitrogen-Vacancy Center Spins in Silicon Carbide at Room Temperature. PHYSICAL REVIEW LETTERS 2020; 124:223601. [PMID: 32567924 DOI: 10.1103/physrevlett.124.223601] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/23/2019] [Accepted: 04/27/2020] [Indexed: 06/11/2023]
Abstract
Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In this work, we coherently control the nitrogen-vacancy (NV) center spins in silicon carbide at room temperature, in which telecom-wavelength emission is detected. We increase the NV concentration sixfold through optimization of implantation conditions. Hence, coherent control of NV center spins is achieved at room temperature, and the coherence time T_{2} can be reached to around 17.1 μs. Furthermore, an investigation of fluorescence properties of single NV centers shows that they are room-temperature photostable single-photon sources at telecom range. Taking advantage of technologically mature materials, the experiment demonstrates that the NV centers in silicon carbide are promising platforms for large-scale integrated quantum photonics and long-distance quantum networks.
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Affiliation(s)
- Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Fei-Fei Yan
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Zheng-Hao Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - He Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Guo-Ping Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Li-Ping Guo
- Accelerator Laboratory, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
| | - Xiong Zhou
- Accelerator Laboratory, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
| | - Jin-Ming Cui
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jian Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Zong-Quan Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Xiao-Ye Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
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29
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Xu J, Habib A, Kumar S, Wu F, Sundararaman R, Ping Y. Spin-phonon relaxation from a universal ab initio density-matrix approach. Nat Commun 2020; 11:2780. [PMID: 32493901 PMCID: PMC7270186 DOI: 10.1038/s41467-020-16063-5] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/11/2019] [Accepted: 04/10/2020] [Indexed: 11/10/2022] Open
Abstract
Designing new quantum materials with long-lived electron spin states urgently requires a general theoretical formalism and computational technique to reliably predict intrinsic spin relaxation times. We present a new, accurate and universal first-principles methodology based on Lindbladian dynamics of density matrices to calculate spin-phonon relaxation time of solids with arbitrary spin mixing and crystal symmetry. This method describes contributions of Elliott-Yafet and D'yakonov-Perel' mechanisms to spin relaxation for systems with and without inversion symmetry on an equal footing. We show that intrinsic spin and momentum relaxation times both decrease with increasing temperature; however, for the D'yakonov-Perel' mechanism, spin relaxation time varies inversely with extrinsic scattering time. We predict large anisotropy of spin lifetime in transition metal dichalcogenides. The excellent agreement with experiments for a broad range of materials underscores the predictive capability of our method for properties critical to quantum information science.
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Affiliation(s)
- Junqing Xu
- Department of Chemistry and Biochemistry, University of California, Santa Cruz, CA, 95064, USA
| | - Adela Habib
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York, 12180, USA
| | - Sushant Kumar
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York, 12180, USA
| | - Feng Wu
- Department of Chemistry and Biochemistry, University of California, Santa Cruz, CA, 95064, USA
| | - Ravishankar Sundararaman
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York, 12180, USA.
| | - Yuan Ping
- Department of Chemistry and Biochemistry, University of California, Santa Cruz, CA, 95064, USA.
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30
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Zhao L, Tao Z, Pavošević F, Wildman A, Hammes-Schiffer S, Li X. Real-Time Time-Dependent Nuclear-Electronic Orbital Approach: Dynamics beyond the Born-Oppenheimer Approximation. J Phys Chem Lett 2020; 11:4052-4058. [PMID: 32251589 DOI: 10.1021/acs.jpclett.0c00701] [Citation(s) in RCA: 51] [Impact Index Per Article: 12.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The quantum mechanical treatment of both electrons and nuclei is crucial in nonadiabatic dynamical processes such as proton-coupled electron transfer. The nuclear-electronic orbital (NEO) method provides an elegant framework for including nuclear quantum effects beyond the Born-Oppenheimer approximation. To enable the study of nonequilibrium properties, we derive and implement a real-time NEO (RT-NEO) approach based on time-dependent Hatree-Fock or density functional theory, in which the electronic and nuclear degrees of freedom are propagated in a time-dependent variational framework. Nuclear and electronic spectral features can be resolved from the time-dependent dipole moment computed using the RT-NEO method. The test cases show the dynamical interplay between the quantum nuclei and the electrons through vibronic coupling. Moreover, vibrational excitation in the RT-NEO approach is demonstrated by applying a resonant driving field, and electronic excitation is demonstrated by simulating excited state intramolecular proton transfer. This work shows that the RT-NEO approach is a promising tool to study nonadiabatic quantum dynamical processes within a time-dependent variational description for the coupled electronic and nuclear degrees of freedom.
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Affiliation(s)
- Luning Zhao
- Department of Chemistry, University of Washington, Seattle, Washington 98195, United States
| | - Zhen Tao
- Department of Chemistry, Yale University, 225 Prospect Street, New Haven, Connecticut 06520, United States
| | - Fabijan Pavošević
- Department of Chemistry, Yale University, 225 Prospect Street, New Haven, Connecticut 06520, United States
| | - Andrew Wildman
- Department of Chemistry, University of Washington, Seattle, Washington 98195, United States
| | - Sharon Hammes-Schiffer
- Department of Chemistry, Yale University, 225 Prospect Street, New Haven, Connecticut 06520, United States
| | - Xiaosong Li
- Department of Chemistry, University of Washington, Seattle, Washington 98195, United States
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31
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Crook AL, Anderson CP, Miao KC, Bourassa A, Lee H, Bayliss SL, Bracher DO, Zhang X, Abe H, Ohshima T, Hu EL, Awschalom DD. Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control. NANO LETTERS 2020; 20:3427-3434. [PMID: 32208710 DOI: 10.1021/acs.nanolett.0c00339] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5000. Subsequent coupling to a single divacancy leads to a Purcell factor of ∼50, which manifests as increased photoluminescence into the zero-phonon line and a shortened excited-state lifetime. Additionally, we measure coherent control of the divacancy ground-state spin inside the cavity nanostructure and demonstrate extended coherence through dynamical decoupling. This spin-cavity system represents an advance toward scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits.
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Affiliation(s)
- Alexander L Crook
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Department of Physics, University of Chicago, Chicago, Illinois 60637, United States
| | - Christopher P Anderson
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Department of Physics, University of Chicago, Chicago, Illinois 60637, United States
| | - Kevin C Miao
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Alexandre Bourassa
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Hope Lee
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Department of Physics, University of Chicago, Chicago, Illinois 60637, United States
| | - Sam L Bayliss
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - David O Bracher
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Xingyu Zhang
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Hiroshi Abe
- National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Takeshi Ohshima
- National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Evelyn L Hu
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - David D Awschalom
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Department of Physics, University of Chicago, Chicago, Illinois 60637, United States
- Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
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32
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Li Q, Wang JF, Yan FF, Cheng ZD, Liu ZH, Zhou K, Guo LP, Zhou X, Zhang WP, Wang XX, Huang W, Xu JS, Li CF, Guo GC. Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide. NANOSCALE 2019; 11:20554-20561. [PMID: 31432857 DOI: 10.1039/c9nr05938e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Color centers in silicon carbide have recently attracted broad interest as high bright single photon sources and defect spins with long coherence time at room temperature. There have been several methods to generate silicon vacancy defects with excellent spin properties in silicon carbide, such as electron irradiation and ion implantation. However, little is known about the depth distribution and nanoscale depth control of the shallow defects. Here, a method is presented to precisely control the depths of the ion implantation induced shallow silicon vacancy defects in silicon carbide by using reactive ion etching with little surface damage. After optimizing the major etching parameters, a slow and stable etching rate of about 5.5 ± 0.5 nm min-1 can be obtained. By successive nanoscale plasma etching, the shallow defects are brought close to the surface step by step. The photoluminescence spectrum and optically detected magnetic resonance spectra are measured, which confirm that there were no plasma-induced optical and spin property changes of the defects. By tracing the mean counts of the remaining defects after each etching process, the depth distribution of the defects can be obtained for various implantation conditions. Moreover, the spin coherence time T2* of the generated VSi defects is detected at different etch depths, which greatly decreases when the depth is less than 25 nm. The method of nanoscale depth control of silicon vacancies would pave the way for investigating the surface spin properties and the applications in nanoscale sensing and quantum photonics.
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Affiliation(s)
- Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Fei-Fei Yan
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Ze-Di Cheng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Zheng-Hao Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Kun Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Li-Ping Guo
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
| | - Xiong Zhou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
| | - Wei-Ping Zhang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
| | - Xiu-Xia Wang
- Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Wei Huang
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
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33
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Miao KC, Bourassa A, Anderson CP, Whiteley SJ, Crook AL, Bayliss SL, Wolfowicz G, Thiering G, Udvarhelyi P, Ivády V, Abe H, Ohshima T, Gali Á, Awschalom DD. Electrically driven optical interferometry with spins in silicon carbide. SCIENCE ADVANCES 2019; 5:eaay0527. [PMID: 31803839 PMCID: PMC6874486 DOI: 10.1126/sciadv.aay0527] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2019] [Accepted: 09/24/2019] [Indexed: 05/24/2023]
Abstract
Interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. The ground-state spin's weak coupling to its environment not only bestows excellent coherence properties but also limits desired drive fields. The excited-state orbitals of these electrons, however, can exhibit stronger coupling to phononic and electric fields. Here, we demonstrate electrically driven coherent quantum interference in the optical transition of single, basally oriented divacancies in commercially available 4H silicon carbide. By applying microwave frequency electric fields, we coherently drive the divacancy's excited-state orbitals and induce Landau-Zener-Stückelberg interference fringes in the resonant optical absorption spectrum. In addition, we find remarkably coherent optical and spin subsystems enabled by the basal divacancy's symmetry. These properties establish divacancies as strong candidates for quantum communication and hybrid system applications, where simultaneous control over optical and spin degrees of freedom is paramount.
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Affiliation(s)
- Kevin C. Miao
- Institute for Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Alexandre Bourassa
- Institute for Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Christopher P. Anderson
- Institute for Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
- Department of Physics, University of Chicago, Chicago, IL 60637, USA
| | - Samuel J. Whiteley
- Institute for Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
- Department of Physics, University of Chicago, Chicago, IL 60637, USA
| | - Alexander L. Crook
- Institute for Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
- Department of Physics, University of Chicago, Chicago, IL 60637, USA
| | - Sam L. Bayliss
- Institute for Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Gary Wolfowicz
- Institute for Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Gergő Thiering
- Wigner Research Centre for Physics, Hungarian Academy of Sciences, PO Box 49, H-1525 Budapest, Hungary
| | - Péter Udvarhelyi
- Wigner Research Centre for Physics, Hungarian Academy of Sciences, PO Box 49, H-1525 Budapest, Hungary
- Department of Biological Physics, Loránd Eötvös University, Pázmány Péter sétány 1/A, H-1117 Budapest, Hungary
| | - Viktor Ivády
- Wigner Research Centre for Physics, Hungarian Academy of Sciences, PO Box 49, H-1525 Budapest, Hungary
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
| | - Hiroshi Abe
- National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Takeshi Ohshima
- National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Ádám Gali
- Wigner Research Centre for Physics, Hungarian Academy of Sciences, PO Box 49, H-1525 Budapest, Hungary
- Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary
| | - David D. Awschalom
- Institute for Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
- Department of Physics, University of Chicago, Chicago, IL 60637, USA
- Institute for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
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34
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High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide. Nat Commun 2019; 10:1954. [PMID: 31028260 PMCID: PMC6486615 DOI: 10.1038/s41467-019-09873-9] [Citation(s) in RCA: 52] [Impact Index Per Article: 10.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/23/2018] [Accepted: 04/04/2019] [Indexed: 11/12/2022] Open
Abstract
Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin–optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron–phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its 4A2 symmetry in ground and excited states, optical resonances are stable with near-Fourier-transform-limited linewidths, allowing exploitation of the spin selectivity of the optical transitions. In combination with millisecond-long spin coherence times originating from the high-purity crystal, we demonstrate high-fidelity optical initialization and coherent spin control, which we exploit to show coherent coupling to single nuclear spins with ∼1 kHz resolution. The summary of our findings makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins. Point defects in solids have potential applications in quantum technologies, but the mechanisms underlying different defects’ performance are not fully established. Nagy et al. show how the wavefunction symmetry of silicon vacancies in SiC leads to promising optical and spin coherence properties.
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35
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Chen YC, Salter PS, Niethammer M, Widmann M, Kaiser F, Nagy R, Morioka N, Babin C, Erlekampf J, Berwian P, Booth MJ, Wrachtrup J. Laser Writing of Scalable Single Color Centers in Silicon Carbide. NANO LETTERS 2019; 19:2377-2383. [PMID: 30882227 DOI: 10.1021/acs.nanolett.8b05070] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems ( Awschalom et al. Nat. Photonics 2018 , 12 , 516 - 527 ; Atatüre et al. Nat. Rev. Mater. 2018 , 3 , 38 - 51 ). However, to achieve scalable devices, it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy (VSi) centers in 4H-SiC using laser writing without any postannealing process. Due to the aberration correction in the writing apparatus and the nonannealing process, we generate single VSi centers with yields up to 30%, located within about 80 nm of the desired position in the transverse plane. We also investigated the photophysics of the laser writing VSi centers and concluded that there are about 16 photons involved in the laser writing VSi center process. Our results represent a powerful tool in the fabrication of single VSi centers in SiC for quantum technologies and provide further insights into laser writing defects in dielectric materials.
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Affiliation(s)
- Yu-Chen Chen
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
| | - Patrick S Salter
- Department of Engineering Science , University of Oxford , Parks Road , Oxford OX1 3PJ , United Kingdom
| | - Matthias Niethammer
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
| | - Matthias Widmann
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
| | - Florian Kaiser
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
| | - Roland Nagy
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
| | - Naoya Morioka
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
| | - Charles Babin
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
| | | | | | - Martin J Booth
- Department of Engineering Science , University of Oxford , Parks Road , Oxford OX1 3PJ , United Kingdom
| | - Jörg Wrachtrup
- Third Institute of Physics , University of Stuttgart and Institute for Quantum Science and Technology IQST , Stuttgart 70569 , Germany
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36
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Haase JF, Wang ZY, Casanova J, Plenio MB. Soft Quantum Control for Highly Selective Interactions among Joint Quantum Systems. PHYSICAL REVIEW LETTERS 2018; 121:050402. [PMID: 30118315 DOI: 10.1103/physrevlett.121.050402] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2017] [Indexed: 06/08/2023]
Abstract
We propose a quantum control scheme aimed at interacting systems that gives rise to highly selective coupling among their near-to-resonance constituents. Our protocol implements temporal control of the interaction strength, switching it on and off again adiabatically. This soft temporal modulation significantly suppresses off-resonant contributions in the interactions. Among the applications of our method we show that it allows us to perform an efficient rotating-wave approximation in a wide parameter regime, the elimination of side peaks in quantum sensing experiments, and selective high-fidelity entanglement gates on nuclear spins with close frequencies. We apply our theory to nitrogen-vacancy centers in diamond and demonstrate the possibility for the detection of weak electron-nuclear coupling under the presence of strong perturbations.
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Affiliation(s)
- J F Haase
- Institut für Theoretische Physik und IQST, Albert-Einstein-Allee 11, Universität Ulm, D-89069 Ulm, Germany
| | - Z-Y Wang
- Institut für Theoretische Physik und IQST, Albert-Einstein-Allee 11, Universität Ulm, D-89069 Ulm, Germany
| | - J Casanova
- Institut für Theoretische Physik und IQST, Albert-Einstein-Allee 11, Universität Ulm, D-89069 Ulm, Germany
| | - M B Plenio
- Institut für Theoretische Physik und IQST, Albert-Einstein-Allee 11, Universität Ulm, D-89069 Ulm, Germany
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37
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Abobeih MH, Cramer J, Bakker MA, Kalb N, Markham M, Twitchen DJ, Taminiau TH. One-second coherence for a single electron spin coupled to a multi-qubit nuclear-spin environment. Nat Commun 2018; 9:2552. [PMID: 29959326 PMCID: PMC6026183 DOI: 10.1038/s41467-018-04916-z] [Citation(s) in RCA: 53] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/04/2018] [Accepted: 05/21/2018] [Indexed: 11/09/2022] Open
Abstract
Single electron spins coupled to multiple nuclear spins provide promising multi-qubit registers for quantum sensing and quantum networks. The obtainable level of control is determined by how well the electron spin can be selectively coupled to, and decoupled from, the surrounding nuclear spins. Here we realize a coherence time exceeding a second for a single nitrogen-vacancy electron spin through decoupling sequences tailored to its microscopic nuclear-spin environment. First, we use the electron spin to probe the environment, which is accurately described by seven individual and six pairs of coupled carbon-13 spins. We develop initialization, control and readout of the carbon-13 pairs in order to directly reveal their atomic structure. We then exploit this knowledge to store quantum states in the electron spin for over a second by carefully avoiding unwanted interactions. These results provide a proof-of-principle for quantum sensing of complex multi-spin systems and an opportunity for multi-qubit quantum registers with long coherence times.
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Affiliation(s)
- M H Abobeih
- QuTech, Delft University of Technology, PO Box 5046, 2600 GA, Delft, The Netherlands
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600 GA, Delft, The Netherlands
| | - J Cramer
- QuTech, Delft University of Technology, PO Box 5046, 2600 GA, Delft, The Netherlands
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600 GA, Delft, The Netherlands
| | - M A Bakker
- QuTech, Delft University of Technology, PO Box 5046, 2600 GA, Delft, The Netherlands
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600 GA, Delft, The Netherlands
| | - N Kalb
- QuTech, Delft University of Technology, PO Box 5046, 2600 GA, Delft, The Netherlands
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600 GA, Delft, The Netherlands
| | - M Markham
- Element Six Innovation, Fermi Avenue, Harwell Oxford, Didcot, Oxfordshire, OX11 0QR, United Kingdom
| | - D J Twitchen
- Element Six Innovation, Fermi Avenue, Harwell Oxford, Didcot, Oxfordshire, OX11 0QR, United Kingdom
| | - T H Taminiau
- QuTech, Delft University of Technology, PO Box 5046, 2600 GA, Delft, The Netherlands.
- Kavli Institute of Nanoscience Delft, Delft University of Technology, PO Box 5046, 2600 GA, Delft, The Netherlands.
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38
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Sun B, Sun Y, Wang C. Flexible Transparent and Free-Standing SiC Nanowires Fabric: Stretchable UV Absorber and Fast-Response UV-A Detector. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1703391. [PMID: 29383845 DOI: 10.1002/smll.201703391] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2017] [Revised: 11/25/2017] [Indexed: 06/07/2023]
Abstract
Transparent and flexible materials are desired for the construction of photoelectric multifunctional integrated devices and portable electronics. Herein, 2H-SiC nanowires are assembled into a flexible, transparent, self-standing nanowire fabric (FTS-NWsF). The as-synthesized ultralong nanowires form high-quality crystals with a few stacking faults. The optical transmission spectra reveal that FTS-NWsF absorbs most incident 200-400 nm light, but remains transparent to visible light. A polydimethylsiloxane (PDMS)-SiC fabric-PDMS sandwich film device exhibits stable electrical output even when repeatedly stretched by up to 50%. Unlike previous SiC nanowires in which stacking faults are prevalent, the transparent, stretchable SiC fabric shows considerable photoelectric activity and exhibits a rapid photoresponse (rise and decay time < 30 ms) to 340-400 nm light, covering most of the UV-A spectral region. These advances represent significant progress in the design of functional optoelectronic SiC nanowires and transparent and stretchable optoelectronic systems.
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Affiliation(s)
- Bo Sun
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, The Key Laboratory of Low-Carbon Chemistry and Energy Conservation of Guangdong Province, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, P. R. China
| | - Yong Sun
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, The Key Laboratory of Low-Carbon Chemistry and Energy Conservation of Guangdong Province, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, P. R. China
| | - Chengxin Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, The Key Laboratory of Low-Carbon Chemistry and Energy Conservation of Guangdong Province, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, P. R. China
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39
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Morton JJL, Bertet P. Storing quantum information in spins and high-sensitivity ESR. JOURNAL OF MAGNETIC RESONANCE (SAN DIEGO, CALIF. : 1997) 2018; 287:128-139. [PMID: 29413326 DOI: 10.1016/j.jmr.2017.11.015] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2017] [Revised: 11/21/2017] [Accepted: 11/22/2017] [Indexed: 06/08/2023]
Abstract
Quantum information, encoded within the states of quantum systems, represents a novel and rich form of information which has inspired new types of computers and communications systems. Many diverse electron spin systems have been studied with a view to storing quantum information, including molecular radicals, point defects and impurities in inorganic systems, and quantum dots in semiconductor devices. In these systems, spin coherence times can exceed seconds, single spins can be addressed through electrical and optical methods, and new spin systems with advantageous properties continue to be identified. Spin ensembles strongly coupled to microwave resonators can, in principle, be used to store the coherent states of single microwave photons, enabling so-called microwave quantum memories. We discuss key requirements in realising such memories, including considerations for superconducting resonators whose frequency can be tuned onto resonance with the spins. Finally, progress towards microwave quantum memories and other developments in the field of superconducting quantum devices are being used to push the limits of sensitivity of inductively-detected electron spin resonance. The state-of-the-art currently stands at around 65 spins per Hz, with prospects to scale down to even fewer spins.
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Affiliation(s)
- John J L Morton
- London Centre for Nanotechnology, UCL, London WC1H 0AH, United Kingdom; Dept. of Electronic and Electrical Engineering, UCL, London WC1E 7JE, United Kingdom.
| | - Patrice Bertet
- Quantronics Group, SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex, France
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40
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Wolfowicz G, Anderson CP, Yeats AL, Whiteley SJ, Niklas J, Poluektov OG, Heremans FJ, Awschalom DD. Optical charge state control of spin defects in 4H-SiC. Nat Commun 2017; 8:1876. [PMID: 29192288 PMCID: PMC5709515 DOI: 10.1038/s41467-017-01993-4] [Citation(s) in RCA: 30] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/26/2017] [Accepted: 10/30/2017] [Indexed: 11/21/2022] Open
Abstract
Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability. We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy and silicon vacancy, obtaining bidirectional optical charge conversion between the bright and dark states of these defects. We measure increased photoluminescence from divacancy ensembles by up to three orders of magnitude using near-ultraviolet excitation, depending on the substrate, and without degrading the electron spin coherence time. This charge conversion remains stable for hours at cryogenic temperatures, allowing spatial and persistent patterning of the charge state populations. We develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC. Defects in silicon carbide represent a viable candidate for realization of spin qubits. Here, the authors show stable bidirectional charge state conversion for the silicon vacancy and divacancy, improving the photoluminescence intensity by up to three orders of magnitude with no effect on spin coherence.
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Affiliation(s)
- Gary Wolfowicz
- Institute for Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA.,WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai, 980-8577, Japan
| | - Christopher P Anderson
- Institute for Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA.,Department of Physics, University of Chicago, Chicago, IL, 60637, USA
| | - Andrew L Yeats
- Institute for Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA.,Institute for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Samuel J Whiteley
- Institute for Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA.,Department of Physics, University of Chicago, Chicago, IL, 60637, USA
| | - Jens Niklas
- Chemical Sciences and Engineering Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Oleg G Poluektov
- Chemical Sciences and Engineering Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - F Joseph Heremans
- Institute for Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA.,Institute for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - David D Awschalom
- Institute for Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA. .,Institute for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA.
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41
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Lunghi A, Totti F, Sanvito S, Sessoli R. Intra-molecular origin of the spin-phonon coupling in slow-relaxing molecular magnets. Chem Sci 2017; 8:6051-6059. [PMID: 28989635 PMCID: PMC5625570 DOI: 10.1039/c7sc02832f] [Citation(s) in RCA: 124] [Impact Index Per Article: 17.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2017] [Accepted: 07/27/2017] [Indexed: 12/22/2022] Open
Abstract
We perform a systematic investigation of the spin-phonon coupling leading to spin relaxation in the prototypical mononuclear single molecule magnet [(tpaPh)Fe]-. In particular we analyze in detail the nature of the most relevant vibrational modes giving rise to the relaxation. Our fully ab initio calculations, where the phonon modes are evaluated at the level of density functional theory and the spin-phonon coupling by mapping post-Hartree-Fock electronic structures onto an effective spin Hamiltonian, reveal that acoustic phonons are not active in the spin-phonon relaxation process of dilute SMMs crystals. Furthermore, we find that intra-molecular vibrational modes produce anisotropy tensor modulations orders of magnitude higher than those associated to rotations. In light of these results we are able to suggest new designing rules for spin-long-living SMMs which go beyond the tailoring of static molecular features but fully take into account dynamical features of the vibrational thermal bath evidencing those internal molecular distortions more relevant to the spin dynamics.
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Affiliation(s)
- Alessandro Lunghi
- School of Physics , CRANN and AMBER , Trinity College Dublin , Dublin 2 , Ireland .
- Universitá degli Studi di Firenze , Dipartimento di Chimica "Ugo Schiff" , Via della Lastruccia 3-13, 50019, Sesto Fiorentino , FI , Italy .
| | - Federico Totti
- Universitá degli Studi di Firenze , Dipartimento di Chimica "Ugo Schiff" , Via della Lastruccia 3-13, 50019, Sesto Fiorentino , FI , Italy .
| | - Stefano Sanvito
- School of Physics , CRANN and AMBER , Trinity College Dublin , Dublin 2 , Ireland .
| | - Roberta Sessoli
- Universitá degli Studi di Firenze , Dipartimento di Chimica "Ugo Schiff" , Via della Lastruccia 3-13, 50019, Sesto Fiorentino , FI , Italy .
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42
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Radulaski M, Widmann M, Niethammer M, Zhang JL, Lee SY, Rendler T, Lagoudakis KG, Son NT, Janzén E, Ohshima T, Wrachtrup J, Vučković J. Scalable Quantum Photonics with Single Color Centers in Silicon Carbide. NANO LETTERS 2017; 17:1782-1786. [PMID: 28225630 DOI: 10.1021/acs.nanolett.6b05102] [Citation(s) in RCA: 31] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.
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Affiliation(s)
- Marina Radulaski
- E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States
| | - Matthias Widmann
- 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart , 70569 Stuttgart, Germany
| | - Matthias Niethammer
- 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart , 70569 Stuttgart, Germany
| | - Jingyuan Linda Zhang
- E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States
| | - Sang-Yun Lee
- 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart , 70569 Stuttgart, Germany
- Center for Quantum Information, Korea Institute of Science and Technology (KIST) , Seoul, 02792, Republic of Korea
| | - Torsten Rendler
- 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart , 70569 Stuttgart, Germany
| | | | - Nguyen Tien Son
- Department of Physics, Chemistry, and Biology, Linköping University , SE-58183 Linköping, Sweden
| | - Erik Janzén
- Department of Physics, Chemistry, and Biology, Linköping University , SE-58183 Linköping, Sweden
| | - Takeshi Ohshima
- National Institutes for Quantum and Radiological Science and Technology (QST) , Takasaki, Gunma 370-1292, Japan
| | - Jörg Wrachtrup
- 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart , 70569 Stuttgart, Germany
| | - Jelena Vučković
- E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States
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