Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature

Launching directional hypersonic surface waves in monolithic gallium phosphide nanodisks: two holes are better than one

The emergence and rapid progress of all-dielectric nanoantennas have provided unprecedented platforms for applications in sensing, optical control of light, opto-mechanics and metrology at the nanoscale. We present a general figure-of-merit (FOM) considering both optical and vibrational responses. Detectable mechanical vibrations ranging from gigahertz to terahertz in gallium phosphide (GaP) structures on sub-wavelength scales are found to surpass their metallic counterparts in a 400-800 nm pump-probe configuration. Then, we tailored low-aspect ratio GaP disks being probed near their optical anapole resonance. We further broke the isotropy of the nanodisks and achieved pronounced directional propagation for launching surface acoustic waves (SAWs) with a double-hole structure rather than with a one-hole configuration, which could be attributed to the constructive superposition of vibration induced by the two holes in the appropriate direction. Finally, we demonstrated that the orbital angular momentum of SAWs could be generated with a spiral distribution of the two-hole nanodisks. Our work paves a new way to monolithic GaP nanoantennas towards photoacoustic applications such as hypersound routers, stirring up inverse designs of individual antennas for phononic metasurfaces, topological phononics as well as quantum phononics.

Application of Synchrotron Radiation-Based Fourier-Transform Infrared Microspectroscopy for Thermal Imaging of Polymer Thin Films

The thermal imaging of surfaces with microscale spatial resolution over micro-sized areas remains a challenging and time-consuming task. Surface thermal imaging is a very important characterization tool in mechanical engineering, microelectronics, chemical process engineering, optics, microfluidics, and biochemistry processing, among others. Within the realm of electronic circuits, this technique has significant potential for investigating hot spots, power densities, and monitoring heat distributions in complementary metal-oxide-semiconductor (CMOS) platforms. We present a new technique for remote non-invasive, contactless thermal field mapping using synchrotron radiation-based Fourier-transform infrared microspectroscopy. We demonstrate a spatial resolution better than 10 um over areas on the order of 12,000 um² measured in a polymeric thin film on top of CaF₂ substrates. Thermal images were obtained from infrared spectra of poly(methyl methacrylate) thin films heated with a wire. The temperature dependence of the collected infrared spectra was analyzed via linear regression and machine learning algorithms, namely random forest and k-nearest neighbor algorithms. This approach speeds up signal analysis and allows for the generation of hyperspectral temperature maps. The results here highlight the potential of infrared absorbance to serve as a remote method for the quantitative determination of heat distribution, thermal properties, and the existence of hot spots, with implications in CMOS technologies and other electronic devices.

Excitation and detection of acoustic phonons in nanoscale systems

Phonons play a key role in the physical properties of materials, and have long been a topic of study in physics. While the effects of phonons had historically been considered to be a hindrance, modern research has shown that phonons can be exploited due to their ability to couple to other excitations and consequently affect the thermal, dielectric, and electronic properties of solid state systems, greatly motivating the engineering of phononic structures. Advances in nanofabrication have allowed for structuring and phonon confinement even down to the nanoscale, drastically changing material properties. Despite developments in fabricating such nanoscale devices, the proper manipulation and characterization of phonons continues to be challenging. However, a fundamental understanding of these processes could enable the realization of key applications in diverse fields such as topological phononics, information technologies, sensing, and quantum electrodynamics, especially when integrated with existing electronic and photonic devices. Here, we highlight seven of the available methods for the excitation and detection of acoustic phonons and vibrations in solid materials, as well as advantages, disadvantages, and additional considerations related to their application. We then provide perspectives towards open challenges in nanophononics and how the additional understanding granted by these techniques could serve to enable the next generation of phononic technological applications.

Terahertz radiation from propagating acoustic phonons based on deformation potential coupling

We report on new THz electromagnetic emission mechanism from deformational coupling of acoustic (AC) phonons with electrons in the propagation medium of non-polar Si. The epicenters of the AC phonon pulses are the surface and interface of a GaP transducer layer whose thickness (d) is varied in nanoscale from 16 to 45 nm. The propagating AC pulses locally modulate the bandgap, which in turn generates a train of electric field pulses, inducing an abrupt drift motion at the depletion edge of Si. The fairly time-delayed THz bursts, centered at different times (t1T H z, t2T H z, and t3T H z), are concurrently emitted only when a series of AC pulses reach the point of the depletion edge of Si, even without any piezoelectricity. The analysis on the observed peak emission amplitudes is consistent with calculations based on the combined effects of mobile charge carrier density and AC-phonon-induced local deformation, which recapitulates the role of deformational potential coupling in THz wave emission in a formulatively distinct manner from piezoelectric counterpart.

The phonon scattering mechanism and its effect on the temperature dependent thermal and thermoelectric properties of a silver nanowire

In this work, the electron-phonon, phonon-phonon, and phonon structure scattering mechanisms and their effect on the thermal and thermoelectric properties of a silver nanowire (AgNW) is investigated in the temperature range of 10 to 300 K. The electron-phonon scattering rate decreases with the increase of temperature. The phonon-phonon scattering rate increases with temperature and becomes greater than the electron-phonon scattering rate when the temperature is higher than the Debye temperature (223 K). The rate of phonon structure scattering is constant. The total phonon scattering rate decreases with temperature when the temperature is lower than about 150 K, and increases when the temperature is higher than 150 K. Correspondingly, the temperature dependent variation trend of the lattice thermal conductivity is opposite diametrically to that of the total phonon scattering rate. The thermoelectric properties of the AgNW are strongly coupled with the thermal conductivity via the phonon and electron transition. The thermoelectric properties of the material are quantified by the figure of merit (ZT). The ZT value of the AgNW is greater than that of bulk silver in the corresponding temperature range, and this difference increases with temperature. The order of the ZT of the AgNW is about 13 times greater than that of bulk silver at room temperature. The large increase of the ZT value of the AgNW is mainly due to the enhanced electron scattering and phonon scattering mechanisms in the AgNW.

Transient Strain-Induced Electronic Structure Modulation in a Semiconducting Polymer Imaged by Scanning Ultrafast Electron Microscopy

Understanding the optoelectronic properties of semiconducting polymers under external strain is essential for their applications in flexible devices. Although prior studies have highlighted the impact of static and macroscopic strains, assessing the effect of a local transient deformation before structural relaxation occurs remains challenging. Here, we employ scanning ultrafast electron microscopy (SUEM) to image the dynamics of a photoinduced transient strain in the semiconducting polymer poly(3-hexylthiophene) (P3HT). We observe that the photoinduced SUEM contrast, corresponding to the local change of secondary electron emission, exhibits an unusual ring-shaped profile. We attribute the observation to the electronic structure modulation of P3HT caused by a photoinduced strain field owing to its low modulus and strong electron-lattice coupling, supported by a finite-element analysis. Our work provides insights into tailoring optoelectronic properties using transient mechanical deformation in semiconducting polymers and demonstrates the versatility of SUEM to study photophysical processes in diverse materials.

Phonon-engineered extreme thermal conductivity materials

Materials with ultrahigh or low thermal conductivity are desirable for many technological applications, such as thermal management of electronic and photonic devices, heat exchangers, energy converters and thermal insulation. Recent advances in simulation tools (first principles, the atomistic Green's function and molecular dynamics) and experimental techniques (pump-probe techniques and microfabricated platforms) have led to new insights on phonon transport and scattering in materials and the discovery of new thermal materials, and are enabling the engineering of phonons towards desired thermal properties. We review recent discoveries of both inorganic and organic materials with ultrahigh and low thermal conductivity, highlighting heat-conduction physics, strategies used to change thermal conductivity, and future directions to achieve extreme thermal conductivities in solid-state materials.

Transient optical non-linearity in p-Si induced by a few cycle extreme THz field

We study the impact of a few cycle extreme terahertz (THz) radiation (the field strength E_THz ∼1-15 MV/cm is well above the DC-field breakdown threshold) on a p-doped Si wafer. Pump-probe measurements of the second harmonic of a weak infrared probe were done at different THz field strengths. The second harmonic yield has an unusual temporal behavior and does not follow the common instantaneous response, ∝ETHz2. These findings were attributed to: (i) the lattice strain by the ponderomotive force of the extreme THz pulse at the maximal THz field strength below 6 MV/cm and (ii) the modulation of the THz field-induced impact ionization rate at the optical probe frequency (due to the modulation of the free carriers' drift kinetic energy from the probe field) at the THz field strength above 6-8 MV/cm.

Frequency-domain study of nonthermal gigahertz phonons reveals Fano coupling to charge carriers

Telecommunication devices exploit hypersonic gigahertz acoustic phonons to mediate signal processing with microwave radiation, and charge carriers to operate various microelectronic components. Potential interactions of hypersound with charge carriers can be revealed through frequency- and momentum-resolved studies of acoustic phonons in photoexcited semiconductors. Here, we present an all-optical method for excitation and frequency-, momentum-, and space-resolved detection of gigahertz acoustic waves in a spatially confined model semiconductor. Lamb waves are excited in a bare silicon membrane using femtosecond optical pulses and detected with frequency-domain micro-Brillouin light spectroscopy. The population of photoexcited gigahertz phonons displays a hundredfold enhancement as compared with thermal equilibrium. The phonon spectra reveal Stokes-anti-Stokes asymmetry due to propagation, and strongly asymmetric Fano resonances due to coupling between the electron-hole plasma and the photoexcited phonons. This work lays the foundation for studying hypersonic signals in nonequilibrium conditions and, more generally, phonon-dependent phenomena in photoexcited nanostructures.

Direct observation of large electron-phonon interaction effect on phonon heat transport

As a foundational concept in many-body physics, electron-phonon interaction is essential to understanding and manipulating charge and energy flow in various electronic, photonic, and energy conversion devices. While much progress has been made in uncovering how phonons affect electron dynamics, it remains a challenge to directly observe the impact of electrons on phonon transport, especially at environmental temperatures. Here, we probe the effect of charge carriers on phonon heat transport at room temperature, using a modified transient thermal grating technique. By optically exciting electron-hole pairs in a crystalline silicon membrane, we single out the effect of the phonon-carrier interaction. The enhanced phonon scattering by photoexcited free carriers results in a substantial reduction in thermal conductivity on a nanosecond timescale. Our study provides direct experimental evidence of the elusive role of electron-phonon interaction in phonon heat transport, which is important for understanding heat conduction in doped semiconductors. We also highlight the possibility of using light to dynamically control thermal transport via electron-phonon coupling.

Theoretical Calculation of Hydrogen Generation and Delivery via Photocatalytic Water Splitting in Boron-Carbon-Nitride Nanotube/Metal Cluster Hybrid

Solar-driven water splitting is an appealing strategy to produce hydrogen energy. However, the non-negligible chance of reverse reactions due to a mixture of hydrogen molecules (H₂) with oxygen species poses challenges for safe H₂ collection and delivery, which hinders its applications. Using first-principles simulations, we propose a hybrid structure design where metal clusters of TM₄ (TM = Au/Pt) are encapsulated in boron-carbon-nitride nanotube (BCNNT) decorated with CuN₃ group. It can readily absorb ultraviolet-visible solar light to generate charge carriers. The energetic electrons and holes would be separately delivered to the reduction site of TM₄ and the oxidation site of the BCNNT layer. Then, protons generated by water dissociation at the BCNNT layer will penetrate through BCNNT and consequently meet electrons at the TM₄ site to be reduced into H₂. As a selective sieve, BCNNT prevents oxygen species from going inside and H₂ from crossing out so that H₂ can be completely isolated. Further, the sufficient space of the tubular cavity endows the transportation feasibility of the produced H₂ along the nanotube for collection. This proposed design combines photocatalytic hydrogen production and safe delivery, which may help in developing a practical solution for a photodriven hydrogen production.

Coherent acoustic phonon dynamics in chiral copolymers

Coherent phonon oscillations in the UV-Vis transient absorption and circular dichroism response of two chiral polyfluorene-based copolymer thin films are investigated. A slow oscillation in the hundred picosecond regime indicates the propagation of a longitudinal acoustic phonon with a frequency in the gigahertz range through cholesteric films of PFPh and PFBT, which allow for the optical determination of the longitudinal sound velocity in these polymers, with values of (2550 ± 140) and (2490 ± 150) m s^-1, respectively. The oscillation is induced by a strain wave, resulting in a pressure-induced periodic shift of the electronic absorption bands, as extracted from a Fourier analysis of the transient spectra. The acoustic phonon oscillation is also clearly detected in the transient circular dichroism (TrCD) response of PFPh, indicating a transient pressure-induced shift of the CD spectrum and possibly also phonon-induced chirality changes via pitch length modulation of the cholesteric helical polymer stack.

Distinct Signatures of Electron-Phonon Coupling Observed in the Lattice Thermal Conductivity of NbSe3 Nanowires

The last two decades have seen tremendous progress in quantitative understanding of several major phonon scattering mechanisms (phonon-phonon, phonon-boundary, phonon-defects), as they are the determinant factors in lattice thermal transport, which is critical for the proper functioning of various electronic and energy conversion devices. However, the roles of another major scattering mechanism, electron-phonon (e-ph) interactions, remain elusive. This is largely due to the lack of solid experimental evidence for the effects of e-ph scattering in the lattice thermal conductivity for the material systems studied thus far. Here we show distinct signatures in the lattice thermal conductivity observed below the charge density wave transition temperatures in NbSe₃ nanowires, which cannot be recaptured without considering e-ph scattering. Our findings can serve as the cornerstone for quantitative understanding of the e-ph scattering effects on lattice thermal transport in many technologically important materials.

Electron-phonon scattering effect on the lattice thermal conductivity of silicon nanostructures

Nanostructuring technology has been widely employed to reduce the thermal conductivity of thermoelectric materials because of the strong phonon-boundary scattering. Optimizing the carrier concentration can not only improve the electrical properties, but also affect the lattice thermal conductivity significantly due to the electron-phonon scattering. The lattice thermal conductivity of silicon nanostructures considering electron-phonon scattering is investigated for comparing the lattice thermal conductivity reductions resulting from nanostructuring technology and the carrier concentration optimization. We performed frequency-dependent simulations of thermal transport systematically in nanowires, solid thin films and nanoporous thin films by solving the phonon Boltzmann transport equation using the discrete ordinate method. All the phonon properties are based on the first-principles calculations. The results show that the lattice thermal conductivity reduction due to the electron-phonon scattering decreases as the feature size of nanostructures goes down and could be ignored at low feature sizes (50 nm for n-type nanowires and 20 nm for p-type nanowires and n-type solid thin films) or a high porosity (0.6 for n-type 500 nm-thick nanoporous thin films) even when the carrier concentration is as high as 10²¹ cm^-3. Similarly, the size effect due to the phonon-boundary scattering also becomes less significant with the increase of carrier concentration. The findings provide a fundamental understanding of electron and phonon transports in nanostructures, which is important for the optimization of nanostructured thermoelectric materials.

The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering

It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi₂Te₃ film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.

Bifurcations of Coupled Electron-Phonon Modes in an Antiferromagnet Subjected to a Magnetic Field

We report on a new effect caused by the electron-phonon coupling in a stoichiometric rare-earth antiferromagnetic crystal subjected to an external magnetic field, namely, the appearance of a nonzero gap in the spectrum of electronic excitations in an arbitrarily small field. The effect was registered in the low-temperature far-infrared (terahertz) reflection spectra of an easy-axis antiferromagnet PrFe_{3}(BO_{3})_{4} in magnetic fields B_{ext}∥c. Both paramagnetic and magnetically ordered phases (including a spin-flop one) were studied in magnetic fields up to 30 T, and two bifurcation points were observed. We show that the field behavior of the coupled modes can be successfully explained and modeled on the basis of the equation derived in the framework of the theory of coupled electron-phonon modes, with the same field-independent electron-phonon interaction constant |W|=14.8  cm^{-1}.

Compromise and Synergy in High-Efficiency Thermoelectric Materials

The past two decades have witnessed the rapid growth of thermoelectric (TE) research. Novel concepts and paradigms are described here that have emerged, targeting superior TE materials and higher TE performance. These superior aspects include band convergence, "phonon-glass electron-crystal", multiscale phonon scattering, resonant states, anharmonicity, etc. Based on these concepts, some new TE materials with distinct features have been identified, including solids with high band degeneracy, with cages in which atoms rattle, with nanostructures at various length scales, etc. In addition, the performance of classical materials has been improved remarkably. However, the figure of merit zT of most TE materials is still lower than 2.0, generally around 1.0, due to interrelated TE properties. In order to realize an "overall zT > 2.0," it is imperative that the interrelated properties are decoupled more thoroughly, or new degrees of freedom are added to the overall optimization problem. The electrical and thermal transport must be synergistically optimized. Here, a detailed discussion about the commonly adopted strategies to optimize individual TE properties is presented. Then, four main compromises between the TE properties are elaborated from the point of view of the underlying mechanisms and decoupling strategies. Finally, some representative systems of synergistic optimization are also presented, which can serve as references for other TE materials. In conclusion, some of the newest ideas for the future are discussed.

Sb induces both doping and precipitation for improving the thermoelectric performance of elemental Te

Eco-friendly Sb-doping leads to a zT of 0.9 in elemental Te.