Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes

Self-assembled superstructure alleviates air-water interface effect in cryo-EM

Cryo-electron microscopy (cryo-EM) has been widely used to reveal the structures of proteins at atomic resolution. One key challenge is that almost all proteins are predominantly adsorbed to the air-water interface during standard cryo-EM specimen preparation. The interaction of proteins with air-water interface will significantly impede the success of reconstruction and achievable resolution. Here, we highlight the critical role of impenetrable surfactant monolayers in passivating the air-water interface problems, and develop a robust effective method for high-resolution cryo-EM analysis, by using the superstructure GSAMs which comprises surfactant self-assembled monolayers (SAMs) and graphene membrane. The GSAMs works well in enriching the orientations and improving particle utilization ratio of multiple proteins, facilitating the 3.3-Å resolution reconstruction of a 100-kDa protein complex (ACE2-RBD), which shows strong preferential orientation using traditional specimen preparation protocol. Additionally, we demonstrate that GSAMs enables the successful determinations of small proteins (<100 kDa) at near-atomic resolution. This study expands the understanding of SAMs and provides a key to better control the interaction of protein with air-water interface.

Ice-Enabled Transfer of Graphene on Copper Substrates Enhanced by Electric Field and Cu2O

Graphene films grown by the chemical vapor deposition (CVD) method suffer from contamination and damage during transfer. Herein, an innovative ice-enabled transfer method under an applied electric field and in the presence of Cu2O (or Cu2O-Electric-field Ice Transfer, abbreviated as CEIT) is developed. Ice serves as a pollution-free transfer medium while water molecules under the electric field fully wet the graphene surface for a bolstered adhesion force between the ice and graphene. Cu2O is used to reduce the adhesion force between graphene and copper. The combined methodology in CEIT ensures complete separation and clean transfer of graphene, resulting in successfully transferred graphene to various substrates, including polydimethylsiloxane (PDMS), Teflon, and C4F8 without pollution. The graphene obtained via CEIT is utilized to fabricate field-effect transistors with electrical performances comparable to that of intrinsic graphene characterized by small Dirac points and high carrier mobility. The carrier mobility of the transferred graphene reaches 9090 cm2 V-1 s-1, demonstrating a superior carrier mobility over that from other dry transfer methods. In a nutshell, the proposed clean and efficient transfer method holds great potential for future applications of graphene.

Emerging Advances around Nanofluidic Transport and Mass Separation under Confinement in Atomically Thin Nanoporous Graphene

Membrane separation stands as an environmentally friendly, high permeance and selectivity, low energy demand process that deserves scientific investigation and industrialization. To address intensive demand, seeking appropriate membrane materials to surpass trade-off between permeability and selectivity and improve stability is on the schedule. 2D materials offer transformational opportunities and a revolutionary platform for researching membrane separation process. Especially, the atomically thin graphene with controllable porosity and structure, as well as unique properties, is widely considered as a candidate for membrane materials aiming to provide extreme stability, exponentially large selectivity combined with high permeability. Currently, it has shown promising opportunities to develop separation membranes to tackle bottlenecks of traditional membranes, and it has been of great interest for tremendously versatile applications such as separation, energy harvesting, and sensing. In this review, starting from transport mechanisms of separation, the material selection bank is narrowed down to nanoporous graphene. The study presents an enlightening overview of very recent developments in the preparation of atomically thin nanoporous graphene and correlates surface properties of such 2D nanoporous materials to their performance in critical separation applications. Finally, challenges related to modulation and manufacturing as well as potential avenues for performance improvements are also pointed out.

Nondestructive Single-Atom-Thick Crystallographic Scanner via Sticky-Note-Like van der Waals Assembling-Disassembling

Crystallographic characteristics, including grain boundaries and crystallographic orientation of each grain, are crucial in defining the properties of two-dimensional materials (2DMs). To date, local microstructure analysis of 2DMs, which requires destructive and complex processes, is primarily used to identify unknown 2DM specimens, hindering the subsequent use of characterized samples. Here, a nondestructive large-area 2D crystallographic analytical method through sticky-note-like van der Waals (vdW) assembling-disassembling is presented. By the vdW assembling of veiled polycrystalline graphene (PCG) with a single-atom-thick single-crystalline graphene filter (SCG-filter), detailed crystallographic information of each grain in PCGs is visualized through a 2D Raman signal scan, which relies on the interlayer twist angle. The scanned PCGs are seamlessly separated from the SCG-filter using vdW disassembling, preserving their original condition. The remaining SCG-filter is then reused for additional crystallographic scans of other PCGs. It is believed that the methods can pave the way for advances in the crystallographic analysis of single-atom-thick materials, offering huge implications for the applications of 2DMs.

Polyacrylonitrile as an Efficient Transfer Medium for Wafer-Scale Transfer of Graphene

The disparity between growth substrates and application-specific substrates can be mediated by reliable graphene transfer, the lack of which currently strongly hinders the graphene applications. Conventionally, the removal of soft polymers, that support the graphene during the transfer, would contaminate graphene surface, produce cracks, and leave unprotected graphene surface sensitive to airborne contaminations. In this work, it is found that polyacrylonitrile (PAN) can function as polymer medium for transferring wafer-size graphene, and encapsulating layer to deliver high-performance graphene devices. Therefore, PAN, that is compatible with device fabrication, does not need to be removed for subsequent applications. The crack-free transfer of 4 in. graphene onto SiO2/Si wafers, and the wafer-scale fabrication of graphene-based field-effect transistor arrays with no observed clear doping, uniformly high carrier mobility (≈11 000 cm2 V-1 s-1), and long-term stability at room temperature, are achieved. This work presents new concept for designing the transfer process of 2D materials, in which multifunctional polymer can be retained, and offers a reliable method for fabricating wafer-scale devices of 2D materials with outstanding performance.

Clean Transfer of Two-Dimensional Materials: A Comprehensive Review

The growth of two-dimensional (2D) materials through chemical vapor deposition (CVD) has sparked a growing interest among both the industrial and academic communities. The interest stems from several key advantages associated with CVD, including high yield, high quality, and high tunability. In order to harness the application potentials of 2D materials, it is often necessary to transfer them from their growth substrates to their desired target substrates. However, conventional transfer methods introduce contamination that can adversely affect the quality and properties of the transferred 2D materials, thus limiting their overall application performance. This review presents a comprehensive summary of the current clean transfer methods for 2D materials with a specific focus on the understanding of interaction between supporting layers and 2D materials. The review encompasses various aspects, including clean transfer methods, post-transfer cleaning techniques, and cleanliness assessment. Furthermore, it analyzes and compares the advances and limitations of these clean transfer techniques. Finally, the review highlights the primary challenges associated with current clean transfer methods and provides an outlook on future prospects.

Toward the Production of Super Graphene

The quality requirements of graphene depend on the applications. Some have a high tolerance for graphene quality and even require some defects, while others require graphene as perfect as possible to achieve good performance. So far, synthesis of large-area graphene films by chemical vapor deposition of carbon precursors on metal substrates, especially on Cu, remains the main way to produce high-quality graphene, which has been significantly developed in the past 15 years. However, although many prototypes are demonstrated, their performance is still more or less far from the theoretical property limit of graphene. This review focuses on how to make super graphene, namely graphene with a perfect structure and free of contaminations. More specially, this study focuses on graphene synthesis on Cu substrates. Typical defects in graphene are first discussed together with the formation mechanisms and how they are characterized normally, followed with a brief review of graphene properties and the effects of defects. Then, the synthesis progress of super graphene from the aspects of substrate, grain size, wrinkles, contamination, adlayers, and point defects are reviewed. Graphene transfer is briefly discussed as well. Finally, the challenges to make super graphene are discussed and a strategy is proposed.

Toward Clean 2D Materials and Devices: Recent Progress in Transfer and Cleaning Methods

Two-dimensional (2D) materials have tremendous potential to revolutionize the field of electronics and photonics. Unlocking such potential, however, is hampered by the presence of contaminants that usually impede the performance of 2D materials in devices. This perspective provides an overview of recent efforts to develop clean 2D materials and devices. It begins by discussing conventional and recently developed wet and dry transfer techniques and their effectiveness in maintaining material "cleanliness". Multi-scale methodologies for assessing the cleanliness of 2D material surfaces and interfaces are then reviewed. Finally, recent advances in passive and active cleaning strategies are presented, including the unique self-cleaning mechanism, thermal annealing, and mechanical treatment that rely on self-cleaning in essence. The crucial role of interface wetting in these methods is emphasized, and it is hoped that this understanding can inspire further extension and innovation of efficient transfer and cleaning of 2D materials for practical applications.

Recent trends in the transfer of graphene films

Recent years have witnessed advances in chemical vapor deposition growth of graphene films on metal foils with fine scalability and thickness controllability. However, challenges for obtaining wrinkle-free, defect-free and large-area uniformity remain to be tackled. In addition, the real commercial applications of graphene films still require industrially compatible transfer techniques with reliable performance of transferred graphene, excellent production capacity, and suitable cost. Transferred graphene films, particularly with a large area, still suffer from the presence of transfer-related cracks, wrinkles and contaminants, which would strongly deteriorate the quality and uniformity of transferred graphene films. Potential applications of graphene films include moisture barrier films, transparent conductive films, electromagnetic shielding films, and optical communications; such applications call different requirements for the performance of transferred graphene, which, in turn, determine the suitable transfer techniques. Besides the reliable transfer process, automatic machines should be well developed for the future batch transfer of graphene films, ensuring the repeatability and scalability. This mini-review provides a summary of recent advances in the transfer of graphene films and offers a perspective for future directions of transfer techniques that are compatible for industrial batch transfer.

Tunable Adhesion for All-Dry Transfer of 2D Materials Enabled by the Freezing of Transfer Medium

The real applications of chemical vapor deposition (CVD)-grown graphene films require the reliable techniques for transferring graphene from growth substrates onto application-specific substrates. The transfer approaches that avoid the use of organic solvents, etchants, and strong bases are compatible with industrial batch processing, in which graphene transfer should be conducted by dry exfoliation and lamination. However, all-dry transfer of graphene remains unachievable owing to the difficulty in precisely controlling interfacial adhesion to enable the crack- and contamination-free transfer. Herein, through controllable crosslinking of transfer medium polymer, the adhesion is successfully tuned between the polymer and graphene for all-dry transfer of graphene wafers. Stronger adhesion enables crack-free peeling of the graphene from growth substrates, while reduced adhesion facilitates the exfoliation of polymer from graphene surface leaving an ultraclean surface. This work provides an industrially compatible approach for transferring 2D materials, key for their future applications, and offers a route for tuning the interfacial adhesion that would allow for the transfer-enabled fabrication of van der Waals heterostructures.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Stamped production of single-crystal hexagonal boron nitride monolayers on various insulating substrates

Controllable growth of two-dimensional (2D) single crystals on insulating substrates is the ultimate pursuit for realizing high-end applications in electronics and optoelectronics. However, for the most typical 2D insulator, hexagonal boron nitride (hBN), the production of a single-crystal monolayer on insulating substrates remains challenging. Here, we propose a methodology to realize the facile production of inch-sized single-crystal hBN monolayers on various insulating substrates by an atomic-scale stamp-like technique. The single-crystal Cu foils grown with hBN films can stick tightly (within 0.35 nm) to the insulating substrate at sub-melting temperature of Cu and extrude the hBN grown on the metallic surface onto the insulating substrate. Single-crystal hBN films can then be obtained by removing the Cu foil similar to the stamp process, regardless of the type or crystallinity of the insulating substrates. Our work will likely promote the manufacturing process of fully single-crystal 2D material-based devices and their applications.

2D Materials in the Display Industry: Status and Prospects

With advances in flexible electronics, innovative foldable, rollable, and stretchable displays have been developed to maintain their performance under various deformations. These flexible devices can develop more innovative designs than conventional devices due to their light weight, high space efficiency, and practical convenience. However, developing flexible devices requires material innovation because the devices must be flexible and exhibit desirable electrical insulating/semiconducting/metallic properties. Recently, emerging 2D materials such as graphene, hexagonal boron nitride, and transition metal dichalcogenides have attracted considerable research attention because of their outstanding electrical, optical, and mechanical properties, which are ideal for flexible electronics. The recent progress and challenges of 2D material growth and display applications are reviewed and perspectives for exploring 2D materials for display applications are discussed.

Carrier Transport Regulation of Pixel Graphene Transparent Electrodes for Active-Matrix Organic Light-Emitting Diode Display

Integrating a graphene transparent electrode (TE) matrix with driving circuits is essential for the practical use of graphene in optoelectronics such as active-matrix organic light-emitting diode (OLED) display, however it is disabled by the transport of carriers between graphene pixels after deposition of a semiconductor functional layer caused by the atomic thickness of graphene. Here, the carrier transport regulation of a graphene TE matrix by using an insulating polyethyleneimine (PEIE) layer is reported. The PEIE forms an ultrathin uniform film (≤10 nm) to fill the gap of the graphene matrix, blocking horizontal electron transport between graphene pixels. Meanwhile, it can reduce the work function of graphene, improving the vertical electron injection through electron tunneling. This enables the fabrication of inverted OLED pixels with record high current and power efficiencies of 90.7 cd A-1 and 89.1 lm W-1 , respectively. By integrating these inverted OLED pixels with a carbon nanotube-based thin-film transistor (CNT-TFT)-driven circuit, an inch-size flexible active-matrix OLED display is demonstrated, in which all OLED pixels are independently controlled by CNT-TFTs. This research paves a way for the application of graphene-like atomically thin TE pixels in flexible optoelectronics such as displays, smart wearables, and free-form surface lighting.

Mixed-Dimensional van der Waals Heterostructures for Boosting Electricity Generation

The emerging technology of harvesting environmental energy using hydrovoltaic devices enriches the conversion forms of renewable energy. It provides more concepts for power supply in micro/nano systems, and hydrovoltaic technology with high performance, usability, and integration is essential for achieving sustainable green energy. Comparing the discovery of multiscale nanomaterials, working layers with innovative microstructures have gradually become the dominant trend in the construction of graphene-based hydrovoltaic devices. However, reports on promoting ion/electron redistribution at the solid-liquid interface through the substrate effect of graphene are accompanied by tedious procedures, nondiverse substrates, and monolithic regulation of enhancement mechanisms. Here, the electrophoretic deposition (EPD)-driven SiC whiskers (SiCw)-assisted graphene transfer process is adopted to alleviate the complexity of the device fabrication caused by graphene transfer. The resulting output performance of the graphene/SiCw (GS) mesh films is significantly boosted. The high integrity of graphene and prominent negative surface charge near the graphene-droplet interface are derived from the overlayer and underlayer inside the graphene-based mixed-dimensional van der Waals (vdW) heterostructures, respectively. Additionally, a self-powered desalination-monitoring system is designed based on integrated hydrovoltaic devices. Electricity harvested from the ionic solutions is reused for deionization, representing an efficient strategy for energy conversion and utilization.

Stacking transfer of wafer-scale graphene-based van der Waals superlattices

High-quality graphene-based van der Waals superlattices are crucial for investigating physical properties and developing functional devices. However, achieving homogeneous wafer-scale graphene-based superlattices with controlled twist angles is challenging. Here, we present a flat-to-flat transfer method for fabricating wafer-scale graphene and graphene-based superlattices. The aqueous solution between graphene and substrate is removed by a two-step spinning-assisted dehydration procedure with the optimal wetting angle. Proton-assisted treatment is further used to clean graphene surfaces and interfaces, which also decouples graphene and neutralizes the doping levels. Twist angles between different layers are accurately controlled by adjusting the macroscopic stacking angle through their wafer flats. Transferred films exhibit minimal defects, homogeneous morphology, and uniform electrical properties over wafer scale. Even at room temperature, robust quantum Hall effects are observed in graphene films with centimetre-scale linewidth. Our stacking transfer method can facilitate the fabrication of graphene-based van der Waals superlattices and accelerate functional device applications.

Highly Air-Stable, Flexible, and Water-Resistive 2D Titanium Carbide MXene-Based RGB Organic Light-Emitting Diode Displays for Transparent Free-Form Electronics

Flexible see-through displays are considered to be the next generation smart display, providing improved information flow, safety, situational awareness, and overall user experience in smart windows, automotive displays, glass-form biomedical displays, and augmented reality systems. 2D titanium carbides (MXenes) are promising material as electrodes of the transparent and flexible displays due to their high transparency, metallic conductivity, and flexibility. However, current MXene-based devices have insufficient air stability and lack engineering schemes to develop matrix-addressable display forms with sufficient pixels to display information. Here, we develop an ultraflexible and environmentally stable MXene-based organic light-emitting diode (OLED) display by combining high performance MXene electrodes, flexible OLEDs, and ultrathin and functional encapsulation systems. The MXene material was synthesized and used to fabricate a highly reliable MXene-based OLED that can stably operate in air condition for over 2000 h, endure repetitive bending deformation of 1.5 mm radius, and maintain environmental stability for 6 h when exposed to wet surroundings. The RGB MXene-based OLEDs were fabricated, (1691 cd m^-2 at 40.4 mA cm^-2 for red, 1377 cd m^-2 at 4.26 mA cm^-2 for green, and 1475 cd m^-2 at 18.6 mA cm^-2 for blue) and a matrix-addressable transparent OLED display was demonstrated that could display letters and shapes.

Electronic and Optoelectronic Monolayer WSe2 Devices via Transfer-Free Fabrication Method

Monolayer transition metal dichalcogenides (TMDs) have drawn significant attention for their potential applications in electronics and optoelectronics. To achieve consistent electronic properties and high device yield, uniform large monolayer crystals are crucial. In this report, we describe the growth of high-quality and uniform monolayer WSe₂ film using chemical vapor deposition on polycrystalline Au substrates. This method allows for the fabrication of continuous large-area WSe₂ film with large-size domains. Additionally, a novel transfer-free method is used to fabricate field-effect transistors (FETs) based on the as-grown WSe₂. The exceptional metal/semiconductor interfaces achieved through this fabrication method result in monolayer WSe₂ FETs with extraordinary electrical performance comparable to those with thermal deposition electrodes, with a high mobility of up to ≈62.95 cm² V^-1 s^-1 at room temperature. In addition, the as-fabricated transfer-free devices can maintain their original performance after weeks without obvious device decay. The transfer-free WSe₂-based photodetectors exhibit prominent photoresponse with a high photoresponsivity of ~1.7 × 10⁴ A W^-1 at V_ds = 1 V and V_g = -60 V and a maximum detectivity value of ~1.2 × 10¹³ Jones. Our study presents a robust pathway for the growth of high-quality monolayer TMDs thin films and large-scale device fabrication.

Buried graphene heterostructures for electrostatic doping of low-dimensional materials

The fabrication and characterization of steep slope transistor devices based on low-dimensional materials requires precise electrostatic doping profiles with steep spatial gradients in order to maintain maximum control over the channel. In this proof-of-concept study we present a versatile graphene heterostructure platform with three buried individually addressable gate electrodes. The platform is based on a vertical stack of embedded titanium and graphene separated by an intermediate oxide to provide an almost planar surface. We demonstrate the functionality and advantages of the platform by exploring transfer and output characteristics at different temperatures of carbon nanotube field-effect transistors with different electrostatic doping configurations. Furthermore, we back up the concept with finite element simulations to investigate the surface potential. The presented heterostructure is an ideal platform for analysis of electrostatic doping of low-dimensional materials for novel low-power transistor devices.

Controlled Adhesion of Ice-Toward Ultraclean 2D Materials

The scalable 2D device fabrication and integration demand either the large-area synthesis or the post-synthesis transfer of 2D layers. While the direct synthesis of 2D materials on most targeted surfaces remains challenging, the transfer approach from the growth substrate onto the targeted surfaces offers an alternative pathway for applications and integrations. However, the current transfer techniques for 2D materials predominantly involve polymers and organic solvents, which are liable to contaminate or deform the ultrasensitive atomic layers. Here, novel ice-aided transfer and ice-stamp transfer methods are developed, in which water (ice) is the only medium in the entire process. In practice, the adhesion between various 2D materials and ice can be well controlled by temperature. Through such controlled adhesion of ice, it is shown that the new transfer methods can yield ultrahigh quality and exceptional cleanliness in transferred 2D flakes and continuous 2D films, and are applicable for a wide range of substrates. Furthermore, beyond transfer, ice can also be used for cleaning the surfaces of 2D materials at higher temperatures. These novel techniques can enable unprecedented ultraclean 2D materials surfaces and performances, and will contribute to the upcoming technological revolutions associated with 2D materials.

Ultraclean and Facile Patterning of CVD Graphene by a UV-Light-Assisted Dry Transfer Method

The synthesis of large-area graphene by the chemical vapor deposition (CVD) method is a mature technology; however, a transfer procedure is required to integrate CVD-grown graphene into a functional device. The reported methods for transferring graphene films cause different degrees of defects (cracking, rupture) and ion/polymer residues, which deteriorate or alter the electrical properties of as-grown graphene. Developing a reliable and fast transfer method that can maintain high-quality graphene remains a challenge. In this work, we employed UV light release tape (UV-RT) as the support layer to replace the frequently used thermal release tape (TRT) in a typical roll-to-roll dry transfer process. In this process, we used an easier-to-remove polymer as an adhesion layer to greatly reduce the strain and defects that occur during the transfer process. The cleanliness of graphene transferred by this method is above 99%, and the carrier mobility is 1.6 and 1.1 times higher than that obtained with conventional wet transfer and TRT transfer methods, respectively. UV illumination leads to facile and uniform release of the graphene film onto the target substrate, achieving one-step and selective patterning of graphene (feature size of <100 μm). The UV-assisted decomposition of the polymer molecular structure into small molecules enables a residue-free and ultraclean graphene surface. This proposed transfer method enables facile patterning of graphene and 2D films while maintaining high quality, which paves the way for versatile functional graphene applications.

Ultrasensitive Antibiotic Perceiving Based on Aptamer-Functionalized Ultraclean Graphene Field-Effect Transistor Biosensor

Antibiotics are powerful tools to treat bacterial infections, but antibiotic pollution is becoming a severe threat to the effective treatment of human bacterial infections. The detection of antibiotics in water has been a crucial research area for bioassays in recent years. There is still an urgent need for a simple ultrasensitive detection approach to achieve accurate antibiotic detection at low concentrations. Herein, a field-effect transistor (FET)-based biosensor was developed using ultraclean graphene and an aptamer for ultrasensitive tetracycline detection. Using a newly designed camphor-rosin clean transfer (CRCT) scheme to prepare ultraclean graphene, the carrier mobility of the FET is found to be improved by more than 10 times compared with the FET prepared by the conventional PMMA transfer (CPT) method. Based on the FET, aptamer-functionalized transistor antibiotic biosensors were constructed and characterized. A dynamic detection range of 5 orders of magnitude, a sensitivity of 21.7 mV/decade, and a low detection limit of 100 fM are achieved for the CRCT-FET biosensors with good stability, which are much improved compared with the biosensor prepared by the CPT method. The antibiotic sensing and sensing performance enhancement mechanisms for the CRCT-FET biosensor were studied and analyzed based on experimental results and a biosensing model. Finally, the CRCT-FET biosensor was verified by detecting antibiotics in actual samples obtained from the entrances of Bohai Bay.

Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation

The integration of large-scale two-dimensional (2D) materials onto semiconductor wafers is highly desirable for advanced electronic devices, but challenges such as transfer-related crack, contamination, wrinkle and doping remain. Here, we developed a generic method by gradient surface energy modulation, leading to a reliable adhesion and release of graphene onto target wafers. The as-obtained wafer-scale graphene exhibited a damage-free, clean, and ultra-flat surface with negligible doping, resulting in uniform sheet resistance with only ~6% deviation. The as-transferred graphene on SiO₂/Si exhibited high carrier mobility reaching up ~10,000 cm² V⁻¹ s⁻¹, with quantum Hall effect (QHE) observed at room temperature. Fractional quantum Hall effect (FQHE) appeared at 1.7 K after encapsulation by h-BN, yielding ultra-high mobility of ~280,000 cm² V⁻¹ s⁻¹. Integrated wafer-scale graphene thermal emitters exhibited significant broadband emission in near-infrared (NIR) spectrum. Overall, the proposed methodology is promising for future integration of wafer-scale 2D materials in advanced electronics and optoelectronics.

Defect-free integration of 2D materials onto semiconductor wafers is desired to implement heterogeneous electronic devices. Here, the authors report a method to transfer high-quality graphene on target wafers via gradient surface energy modulation, leading to improved structural and electronic properties.

Fabrication of a 100 × 100 mm2 nanometer-thick graphite pellicle for extreme ultraviolet lithography by a peel-off and camphor-supported transfer approach

An extreme ultraviolet (EUV) lithography pellicle is used to physically protect a mask from contaminants during the EUV exposure process and needs to have a high EUV transmittance. The EUV pellicle should be fabricated using a freestanding thin film with several tens of nanometer thickness in an area of 110 × 142 mm², which is a challenging task. Here, we propose a peel-off approach to directly detach the nanometer-thick graphite film (NGF)/Ni film from SiO₂/Si wafer and significantly shorten the etching time of the Ni film. Combined with the residue-damage-free transfer method that used camphor as a supporting layer, we successfully fabricated a large-area (100 × 100 mm²) NGF pellicle with a thickness of ∼20 nm, and an EUV transmittance of ∼87.2%.

Large-area transfer of two-dimensional materials free of cracks, contamination and wrinkles via controllable conformal contact

The availability of graphene and other two-dimensional (2D) materials on a wide range of substrates forms the basis for large-area applications, such as graphene integration with silicon-based technologies, which requires graphene on silicon with outperforming carrier mobilities. However, 2D materials were only produced on limited archetypal substrates by chemical vapor deposition approaches. Reliable after-growth transfer techniques, that do not produce cracks, contamination, and wrinkles, are critical for layering 2D materials onto arbitrary substrates. Here we show that, by incorporating oxhydryl groups-containing volatile molecules, the supporting films can be deformed under heat to achieve a controllable conformal contact, enabling the large-area transfer of 2D films without cracks, contamination, and wrinkles. The resulting conformity with enhanced adhesion facilitates the direct delamination of supporting films from graphene, providing ultraclean surfaces and carrier mobilities up to 1,420,000 cm² V⁻¹ s⁻¹ at 4 K.

Reliable transfer techniques are critical for the integration of 2D materials with arbitrary substrates. Here, the authors describe a method to transfer 4-inch and A4-sized defect-free graphene films onto rigid and flexible substrates with controllable conformal contact, leading to improved electrical properties and uniformity.

Developing Graphene Grids for Cryoelectron Microscopy

Cryogenic electron microscopy (cryo-EM) single particle analysis has become one of the major techniques used to study high-resolution 3D structures of biological macromolecules. Specimens are generally prepared in a thin layer of vitrified ice using a holey carbon grid. However, the sample quality using this type of grid is not always ideal for high-resolution imaging even when the specimens in the test tube behave ideally. Various problems occur during a vitrification procedure, including poor/nonuniform distribution of particles, preferred orientation of particles, specimen denaturation/degradation, high background from thick ice, and beam-induced motion, which have become important bottlenecks in high-resolution structural studies using cryo-EM in many projects. In recent years, grids with support films made of graphene and its derivatives have been developed to efficiently solve these problems. Here, the various advantages of graphene grids over conventional holey carbon film grids, functionalization of graphene support films, production methods of graphene grids, and origins of pristine graphene contamination are reviewed and discussed.

Recent Progress on Graphene Flexible Photodetectors

In recent years, optoelectronics and related industries have developed rapidly. As typical optoelectronics devices, photodetectors (PDs) are widely applied in various fields. The functional materials in traditional PDs exhibit high hardness, and the performance of these rigid detectors is thus greatly reduced upon their stretching or bending. Therefore, the development of new flexible PDs with bendable and foldable functions is of great significance and has much interest in wearable, implantable optoelectronic devices. Graphene with excellent electrical and optical performance constructed on various flexible and rigid substrates has great potential in PDs. In this review, recent research progress on graphene-based flexible PDs is outlined. The research states of graphene conductive films are summarized, focusing on PDs based on single-component graphene and mixed-structure graphene, with a systematic analysis of their optical and mechanical performance, and the techniques for optimizing the PDs are also discussed. Finally, a summary of the current applications of graphene flexible PDs and perspectives is provided, and the remaining challenges are discussed.

A Novel Crossbeam Structure with Graphene Sensing Element for N/MEMS Mechanical Sensors

A graphene membrane acts as a highly sensitive element in a nano/micro–electro–mechanical system (N/MEMS) due to its unique physical and chemical properties. Here, a novel crossbeam structure with a graphene varistor protected by Si₃N₄ is presented for N/MEMS mechanical sensors. It substantially overcomes the poor reliability of previous sensors with suspended graphene and exhibits excellent mechanoelectrical coupling performance, as graphene is placed on the root of the crossbeam. By performing basic mechanical electrical measurements, a preferable gauge factor of ~1.35 is obtained. The sensitivity of the graphene pressure sensor based on the crossbeam structure chip is 33.13 mV/V/MPa in a wide range of 0~20 MPa. Other static specifications, including hysteresis error, nonlinear error, and repeatability error, are 2.0119%, 3.3622%, and 4.0271%, respectively. We conclude that a crossbeam structure with a graphene sensing element can be an application for the N/MEMS mechanical sensor.

Hybrid Passivated Red Organic LEDs with Prolonged Operation and Storage Lifetime

In addition to mobile and TV displays, there is a trend of organic LEDs being applied in niche markets, such as microdisplays, automobile taillights, and photobiomodulation therapy. These applications mostly do not require to be flexible in form but need to have long operation lifetimes and storage lifespans. Using traditional glass encapsulation may not be able to fulfill the rigorous product specification, and a hybrid encapsulation method by combining glass and thin-film encapsulation will be the solution. Conventional thin-film encapsulation technology generally involves organic and inorganic multilayer films that are thick and have considerable stress. As a result, when subjected to extreme heat and stress, the film easily peels off. Herein, the water vapor transmission rate (WVTR) of a 2 µm silicon nitride film prepared at 85 °C is less than 5 × 10^-5 g/m²/day and its stress is optimized to be 23 MPa. Red organic LEDs are passivated with the hybrid encapsulation, and the T₉₅ lifetime reaches nearly 10 years if the LED is continuously driven at an initial luminance of 1000 cd/m². In addition, a storage lifespan of over 17 years is achieved.

Using Scalable Graphene via Press-and-Peel: A Robust and Storable Tape

The independent expertise required by the preparation and application of graphene has brought a challenge to the more fluent development of graphene devices. We combine the advantages of chemical vapor deposition and micromechanical exfoliation methods of synthesizing graphene to develop a "graphene tape" for the fast utilization of graphene, which is robust, storable, and user-friendly. Prepared by pretransferring graphene to the surface of a polymer carrier film with weak interfacial adhesion, this graphene tape enables the acquisition, patterning, and layer-by-layer epitaxy of scalable graphene on a target substrate through simple cutting, pressing, and peeling off. Multiple characterizations demonstrate its comparable quality with as-synthesized graphene even after stored for over 30 days, overcoming the time and space limitations of acquiring a graphene sample. We believe that this graphene tape can bridge the current gap between graphene synthesis and applications and promote industrial progress of graphene-based devices in the post-Moore era.

Growth of wafer-scale graphene-hexagonal boron nitride vertical heterostructures with clear interfaces for obtaining atomically thin electrical analogs

Two-dimensional (2D) integrated circuits based on graphene (Gr) heterostructures have emerged as next-generation electronic devices. However, it is still challenging to produce high-quality and large-area Gr/hexagonal boron nitride (h-BN) vertical heterostructures with clear interfaces and precise layer control. In this work, a two-step metallic alloy-assisted epitaxial growth approach has been demonstrated for producing wafer-scale vertical hexagonal boron nitride/graphene (h-BN/Gr) heterostructures with clear interfaces. The heterostructures maintain high uniformity while scaling up and thickening. The layer number of both h-BN and graphene can be independently controlled by tuning the growth process. Furthermore, conductance measurements confirm that electrical hysteresis disappears on h-BN/Gr field-effect transistors, which is attributed to the h-BN dielectric surface. Our work blazes a trail toward next-generation graphene-based analog devices.

Application of Soxhlet Extractor for Ultra-clean Graphene Transfer

Surface contamination experienced during polymer-assisted transfer is detrimental for optical and electrical properties of 2D materials. This contamination is usually due to incomplete polymer removal and also due to impurities present in organic solvents. Here, we report a simple, economical, and highly efficient approach for obtaining pristine graphene on a suitable substrate (e.g., SiO₂/Si) by utilizing Soxhlet extraction apparatus for delicate removal of the polymer with a freshly distilled ultrapure solvent (acetone) in a continuous fashion. Excellent structural and morphological qualities of the material thus produced were confirmed using optical microscopy, atomic force microscopy, scanning electron microscopy, and Raman spectroscopy. Compared to the conventional protocol, graphene produced by the current approach has a lower residual polymer content, leading to a root mean square roughness of only 1.26 nm. The amount of strain and doping was found to be similar, but the D-band, which is indicative of the defects, was less pronounced in the samples prepared by Soxhlet-assisted transfer. The new procedure is virtually effortless from the experimental point of view, utilizes much less solvent compared to the conventional washing procedure, and allows for easy scale-up. Extension of this process to other 2D materials would not only provide samples with superior intrinsic properties but also enhance their suitability for advanced technological applications.

Developing Graphene-Based Moiré Heterostructures for Twistronics

Graphene-based moiré heterostructures are strongly correlated materials, and they are considered to be an effective platform to investigate the challenges of condensed matter physics. This is due to the distinct electronic properties that are unique to moiré superlattices and peculiar band structures. The increasing research on strongly correlated physics via graphene-based moiré heterostructures, especially unconventional superconductors, greatly promotes the development of condensed matter physics. Herein, the preparation methods of graphene-based moiré heterostructures on both in situ growth and assembling monolayer 2D materials are discussed. Methods to improve the quality of graphene and optimize the transfer process are presented to mitigate the limitations of low-quality graphene and damage caused by the transfer process during the fabrication of graphene-based moiré heterostructures. Then, the topological properties in various graphene-based moiré heterostructures are reviewed. Furthermore, recent advances regarding the factors that influence physical performances via a changing twist angle, the exertion of strain, and regulation of the dielectric environment are presented. Moreover, various unique physical properties in graphene-based moiré heterostructures are demonstrated. Finally, the challenges faced during the preparation and characterization of graphene-based moiré heterostructures are discussed. An outlook for the further development of moiré heterostructures is also presented.

Recent Progress in the Transfer of Graphene Films and Nanostructures

The one-atom-thick graphene has excellent electronic, optical, thermal, and mechanical properties. Currently, chemical vapor deposition (CVD) graphene has received a great deal of attention because it provides access to large-area and uniform films with high-quality. This allows the fabrication of graphene based-electronics, sensors, photonics, and optoelectronics for practical applications. Zero bandgap, however, limits the application of a graphene film as electronic transistor. The most commonly used bottom-up approaches have achieved efficient tuning of the electronic bandgap by customizing well-defined graphene nanostructures. The postgrowth transfer of graphene films/nanostructures to a certain substrate is crucial in utilizing graphene in applicable devices. In this review, the basic growth mechanism of CVD graphene is first introduced. Then, recent advances in various transfer methods of as-grown graphene to target substrates are presented. The fabrication and transfer methods of graphene nanostructures are also provided, and then the transfer-related applications are summarized. At last, the challenging issues and the potential transfer-free approaches are discussed.

Graphene Transfer: Paving the Road for Applications of Chemical Vapor Deposition Graphene

Owing to the fascinating properties of graphene, fulfilling the promising characteristics of graphene in applications has ignited enormous scientific and industrial interest. Chemical vapor deposition (CVD) growth of graphene on metal substrates provides tantalizing opportunities for the large-area synthesis of graphene in a controllable manner. However, the tedious transfer of graphene from metal substrates onto desired substrates remains inevitable, and cracks of graphene membrane, transfer-induced doping, wrinkles as well as surface contamination can be incurred during the transfer, which highly degrade the performance of graphene. Furthermore, new issues can arise when moving to large-scale transfer at an industrial scale, thus cost-efficient and environment-friendly transfer techniques also become imperative. The aim of this review is to provide a comprehensive understanding of transfer-related issues and the corresponding experimental solutions and to provide an outlook for future transfer techniques of CVD graphene films on an industrial scale.

Direct growth of wafer-scale highly oriented graphene on sapphire

Direct chemical vapor deposition (CVD) growth of wafer-scale high-quality graphene on dielectrics is of paramount importance for versatile applications. Nevertheless, the synthesized graphene is typically a polycrystalline film with high density of uncontrolled defects, resulting in a low carrier mobility and high sheet resistance. Here, we report the direct growth of highly oriented monolayer graphene films on sapphire wafers. Our growth strategy is achieved by designing an electromagnetic induction heating CVD operated at elevated temperature, where the high pyrolysis and migration barriers of carbon species are easily overcome. Meanwhile, the embryonic graphene domains are guided into good alignment by minimizing its configuration energy. The thus obtained graphene film accordingly manifests a markedly improved carrier mobility (~14,700 square centimeters per volt per second at 4 kelvin) and reduced sheet resistance (~587 ohms per square), which compare favorably with those from catalytic growth on polycrystalline metal foils and epitaxial growth on silicon carbide.

2D Materials for Skin-Mountable Electronic Devices

Skin-mountable devices that can directly measure various biosignals and external stimuli and communicate the information to the users have been actively studied owing to increasing demand for wearable electronics and newer healthcare systems. Research on skin-mountable devices is mainly focused on those materials and mechanical design aspects that satisfy the device fabrication requirements on unusual substrates like skin and also for achieving good sensing capabilities and stable device operation in high-strain conditions. 2D materials that are atomically thin and possess unique electrical and optical properties offer several important features that can address the challenging needs in wearable, skin-mountable electronic devices. Herein, recent research progress on skin-mountable devices based on 2D materials that exhibit a variety of device functions including information input and output and in vitro and in vivo healthcare and diagnosis is reviewed. The challenges, potential solutions, and perspectives on trends for future work are also discussed.

Hole Injection Role of p-Type Conjugated Polymer Nanolayers in Phosphorescent Organic Light-Emitting Devices

Here, we report the hole injection role of p-type conjugated polymer layer in phosphorescent organic light-emitting devices (OLEDs). Poly(3-hexylthiophene) (P3HT) nanolayers (thickness = ~1 nm thick), which were subjected to thermal annealing at 140 °C by varying annealing time, were inserted between indium tin oxide (ITO) anodes and hole transport layers (N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzidine, NPB). The 1 nm-thick P3HT layers showed very weak absorption in the visible light range of 500~650 nm. The device results disclosed that the presence of P3HT layers were just able to improve the charge injection of OLEDs leading to an enhanced luminance irrespective of thermal annealing condition. The highest luminance and efficiency were achieved for the OLEDs with the P3HT layers annealed at 140 °C for 10 min. Further annealing for 30 min resulted in turn-down of device performances. The emission color was almost unchanged by the presence of P3HT layers even though the color coordinates were marginally fluctuated according to the annealing time. The present result delivers the possibility to use p-type conjugated polymers (i.e., P3HT) as a hole injection layer in OLEDs.

Highly porous nanofiber-supported monolayer graphene membranes for ultrafast organic solvent nanofiltration

Scalable fabrication of monolayer graphene membrane on porous supports is key to realizing practical applications of atomically thin membranes, but it is technologically challenging. Here, we demonstrate a facile and versatile electrospinning approach to realize nanoporous graphene membranes on different polymeric supports with high porosity for efficient diffusion- and pressure-driven separations. The conductive graphene works as an excellent receptor for deposition of highly porous nanofibers during electrospinning, thereby enabling direct attachment of graphene to the support. A universal “binder” additive is shown to enhance adhesion between the graphene layer and polymeric supports, resulting in high graphene coverage on nanofibers made from different polymers. After defect sealing and oxygen plasma treatment, the resulting nanoporous membranes demonstrate record-high performances in dialysis and organic solvent nanofiltration, with a pure ethanol permeance of 156.8 liters m⁻² hour⁻¹ bar⁻¹ and 94.5% rejection to Rose Bengal (1011 g mol⁻¹) that surpasses the permeability-selectivity trade-off.

Fabrication of extreme ultraviolet lithography pellicle with nanometer-thick graphite film by sublimation of camphor supporting layer

An extreme ultraviolet (EUV) pellicle consists of freestanding thin films on a frame; these films are tens of nanometers in thickness and can include Si, SiN_X, or graphite. Nanometer-thick graphite films (NGFs), synthesized via chemical vapor deposition on a metal catalyst, are used as a pellicle material. The most common method to transfer NGFs onto a substrate or a frame is to use polymethyl methacrylate (PMMA) as a supporting layer. However, this PMMA-mediated technique involves several disadvantages in term of manufacturing NGF EUV pellicles. When removing the PMMA using acetone or O₂plasma, defects or deflections can occur in the NGFs. Furthermore, PMMA residues are generally present on large-area NGFs. In this study, a transfer method using camphor instead of PMMA as the supporting layer was developed to overcome these problems. After the camphor/NGF was formed on the frame, camphor was removed via sublimation in an atmosphere of ethanol vapor. This study investigated the deposition and sublimation of camphor, and confirmed that no residue was present and no deflection or defects were observed in the NGFs. Thus, a large-area NGF pellicle was successfully fabricated using the camphor transfer process.

A Simplified Method for Patterning Graphene on Dielectric Layers

The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600-700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO₂ with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.

Graphene, Graphene-Derivatives and Composites: Fundamentals, Synthesis Approaches to Applications

Graphene has accomplished huge notoriety and interest from the universe of science considering its exceptional mechanical physical and thermal properties. Graphene is an allotrope of carbon having one atom thick size and planar sheets thickly stuffed in a lattice structure resembling a honeycomb structure. Numerous methods to prepare graphene have been created throughout a limited span of time. Due to its fascinating properties, it has found some extensive applications to a wide variety of fields. So, we believe there is a necessity to produce a document of the outstanding methods and some of the novel applications of graphene. This article centres around the strategies to orchestrate graphene and its applications in an attempt to sum up the advancements that has taken place in the research of graphene.

Embedded Reverse-Offset Printing of Silver Nanowires and Its Application to Double-Stacked Transparent Electrodes with Microscale Patterns

We propose an embedded reverse-offset printing (EROP) method, which generates silver nanowire (AgNW) transparent electrodes for display applications. The proposed EROP method can solve the two critical issues of microscale pattern formation and surface planarization. The AgNW electrode had a transmittance of 82% at 550 nm, a sheet resistance of 12.2 Ω/sq, and a 3.27 nm smooth surface. We realized the roll-based pattern formation of AgNW on a plastic substrate as small as 10 μm with negligible step differences to facilitate the proposed method. The proposed EROP method also produced a double-stacked AgNW electrode, enabling the simultaneous operation of separately micropatterned devices. To verify the usefulness of EROP, we fabricated an organic light-emitting diode (OLED) device to demonstrate leakage current reduction and efficiency improvement compared with a conventional indium tin oxide (ITO)-based OLED device. The EROP-based OLED showed 38 and 25% higher current efficiencies than an insulator-patterned AgNW OLED and a conventional ITO-based OLED, respectively.

Reversible hydrogenation restores defected graphene to graphene

Graphene as a two-dimensional material is prone to hydrocarbon contaminations, which can significantly alter its intrinsic electrical properties. Herein, we implement a facile hydrogenation-dehydrogenation strategy to remove hydrocarbon contaminations and preserve the excellent transport properties of monolayer graphene. Using electron microscopy we quantitatively characterized the improved cleanness of hydrogenated graphene compared to untreated samples. In situ spectroscopic investigations revealed that the hydrogenation treatment promoted the adsorption ofytyt water at the graphene surface, resulting in a protective layer against the re-deposition of hydrocarbon molecules. Additionally, the further dehydrogenation of hydrogenated graphene rendered a more pristine-like basal plane with improved carrier mobility compared to untreated pristine graphene. Our findings provide a practical post-growth cleaning protocol for graphene with maintained surface cleanness and lattice integrity to systematically carry a range of surface chemistry in the form of a well-performing and reproducible transistor.

Impact of Polymer Residue Level on the In-Plane Thermal Conductivity of Suspended Large-Area Graphene Sheets

The presence of polymer transfer residues on graphene surfaces is a major bottleneck to overcome for the commercial and industrial viability of devices incorporating graphene layers. In particular, how clean the surface must be to recover high (>2500 W/mK) thermal conductivity and maximize the heat spreading capability of graphene for thermal management applications remains unclear. Here, we present the first systematic study of the impact of different levels of polymer residues on the in-plane thermal conductivity (κ_r) of single-layer graphene (SLG) fabricated by chemical vapor deposition (CVD). Control over the quantity of surface residue was achieved by varying the length of time each sample was rinsed in toluene to remove the poly(methyl methacrylate) (PMMA) support layer. The level of residue contamination was assessed using atomic force microscopy (AFM) and optical characterization. The thermal conductivity of the suspended SLG was measured using an optothermal Raman technique. We observed that the presence of polymer surface residue has a significant impact on the thermal properties of SLG, with the most heavily contaminated sample exhibiting a κ_r as low as (905 +155/-100) W/mK. Even without complete eradication of surface residues, a thermal conductivity as high as (3100 +1400/-900) W/mK was recovered, where the separation between adjacent clusters was sufficiently large (>700 nm). The proportion of the SLG surface covered by residues and the mean separation distance between clusters were found to be key factors in determining the level of κ_r suppression. This work has important implications for future large-scale graphene fabrication and transfer, particularly where graphene is to be used as a heat spreading layer in devices. The possibility of new opportunities for manipulation of the thermal properties of SLG via PMMA nanopatterning is also raised.

Phosphomolybdic Acid-Modified Monolayer Graphene Anode for Efficient Organic and Perovskite Light-Emitting Diodes

Graphene is a promising flexible transparent electrode, and significant progress in graphene-based optoelectronic devices has been accomplished by reducing the sheet resistance and tuning the work function. Herein, phosphomolybdic acid (PMA) is proposed as a novel p-type chemical dopant for graphene, and the optical and electrical properties of graphene are investigated systematically. As a result, the monolayer graphene electrode with lower sheet resistance and work function are obtained while maintaining a high transmittance. The Raman spectrum proves the p-type doping effect of PMA on graphene, and the X-ray photoelectron spectroscopy results reveal the mechanism, which is that the electrons transfer from graphene to PMA through the Mo-O-C bond. Furthermore, using the PMA-doped graphene anode, organic and perovskite light-emitting diodes obtained the maximum efficiencies of 129.3 and 15.6 cd/A with an increase of 50.8 and 36.8% compared with the pristine counterparts, respectively. This work confirms that PMA is a potential p-type chemical dopant to achieve an ideal graphene electrode and demonstrates the feasibility of PMA-doped graphene in the practical application of next-generation displays and solid-state lighting.