Engineering the thermal conductivity along an individual silicon nanowire by selective helium ion irradiation

Chemical short-range order increases the phonon heat conductivity in a refractory high-entropy alloy

We study the effects of the chemical short-range order (SRO) on the thermal conductivity of the refractory high-entropy alloy HfNbTaTiZr using atomistic simulation. Samples with different degrees of chemical SRO are prepared by a Monte Carlo scheme. With increasing SRO, a tendency of forming HfTi and TiZr clusters is found. The phonon density of states is determined from the velocity auto-correlation function and chemical SRO modifies the high-frequency part of the phonon density of states. Lattice heat conductivity is calculated by non-equilibrium molecular dynamics simulations. The heat conductivity of the random alloy is lower than that of the segregated binary alloys. Phonon scattering by SRO precipitates might be expected to reduce scattering times and, therefore, decrease thermal conductivity. We find that, in contrast, due to the increase of the conductivity alongside SRO cluster percolation pathways, SRO increases the lattice heat conductivity by around 12 %. This is expected to be a general result, extending to other HEAs.

Few-layer Bi2O2Se: a promising candidate for high-performance near-room-temperature thermoelectric applications

Advancements in high-temperature thermoelectric (TE) materials have been substantial, yet identifying promising near-room-temperature candidates for efficient power generation from low-grade waste heat or TE cooling applications has become critical but proven exceedingly challenging. Bismuth oxyselenide (Bi2O2Se) emerges as an ideal candidate for near-room-temperature energy harvesting due to its low thermal conductivity, high carrier mobility and remarkable air-stability. In this study, the TE properties of few-layer Bi2O2Se over a wide temperature range (20-380 K) are investigated, where a charge transport mechanism transitioning from polar optical phonon to piezoelectric scattering at 140 K is observed. Moreover, the Seebeck coefficient (S) increases with temperature up to 280 K then stabilizes at∼-200μV K-1through 380 K. Bi2O2Se demonstrates high mobility (450 cm2V-1s-1) within the optimum power factor (PF) window, despite itsT-1.25dependence. The high mobility compensates the minor reduction in carrier densityn2Dhence contributes to maintain a robust electrical conductivity∼3 × 104S m-1. This results in a remarkable PF of 860μW m-1K-2at 280 K without the necessity for gating (Vg= 0 V), reflecting the innate performance of the as-grown material. These results underscore the considerable promise of Bi2O2Se for room temperature TE applications.

Heat flux concentrators based on nanoscale phononic metastructures

In recent years, nanoscale heat flux regulation has been at the forefront of research. Nanoscale heat flux concentration is of potential importance in various applications, but no research has been conducted on local heat flux concentration. In this paper, we designed two heat flux concentrators using patterned amorphous and nanomesh structures, respectively. Using molecular dynamics simulation, we find that the heat flux in the central regions is much higher than that in the adjacent regions, with the concentration ratio arriving at 9-fold. Thus a heat flux concentrator is realized using these nanophononic metastructures. The phonon localization theory was used to explain the underlying mechanism. This work provides a direct design strategy for thermal concentrators using practical nanofabrication technologies.

Remarkable Thermal Conductivity Reduction of Silicon Nanowires during the Bending Process

The one-dimensional geometry of silicon nanowire helps to overcome the rigid and brittle nature of bulk silicon and enables it to withstand substantial bending stresses. This provides exciting opportunities for the development of flexible electronics. The bending strain introduces atomic displacement in the lattice structure, which inherently has a significant impact on the thermal conductivity. The strain-dependent thermal conductivity of silicon nanowire is crucial to the thermal management and performance of flexible electronic devices. However, in situ thermal conductivity measurement of bending silicon nanowires remains challenging and unreported due to the varying thermal contact resistances between the sample and sensor/heat sink. In this study, the Raman spectroscopy-assisted steady state thermal conductivity measurement method is coupled with a micromanipulation system to successively monitor the thermal conductivity variation of silicon nanowires during the bending process. The result shows that the thermal conductivity of silicon nanowires steeply decreases 55-78% owing to the strain-induced structural deformation during bending. Furthermore, the proposed in situ thermal conductivity measurement method can also be extended to other nanomaterials.

Non-Equilibrium Thermodynamics of Heat Transport in Superlattices, Graded Systems, and Thermal Metamaterials with Defects

In this review, we discuss a nonequilibrium thermodynamic theory for heat transport in superlattices, graded systems, and thermal metamaterials with defects. The aim is to provide researchers in nonequilibrium thermodynamics as well as material scientists with a framework to consider in a systematic way several nonequilibrium questions about current developments, which are fostering new aims in heat transport, and the techniques for achieving them, for instance, defect engineering, dislocation engineering, stress engineering, phonon engineering, and nanoengineering. We also suggest some new applications in the particular case of mobile defects.

Thermal Transport in 2D Materials

In recent decades, two-dimensional materials (2D) such as graphene, black and blue phosphorenes, transition metal dichalcogenides (e.g., WS₂ and MoS₂), and h-BN have received illustrious consideration due to their promising properties. Increasingly, nanomaterial thermal properties have become a topic of research. Since nanodevices have to constantly be further miniaturized, thermal dissipation at the nanoscale has become one of the key issues in the nanotechnology field. Different techniques have been developed to measure the thermal conductivity of nanomaterials. A brief review of 2D material developments, thermal conductivity concepts, simulation methods, and recent research in heat conduction measurements is presented. Finally, recent research progress is summarized in this article.

Large Thermal Conductivity Switching in Ferroelectrics by Electric Field-Triggered Crystal Symmetry Engineering

A convenient, reversible, fast, and wide-range switching of thermal conductivity is desired for efficient heat energy management. However, traditional methods, such as temperature-induced phase transition and chemical doping, have many limitations, e.g., the lack of continuous tunability over a wide temperature range and low switching speed. In this work, a strategy of electric field-driven crystal symmetry engineering to efficiently modulate thermal conductivity is reported with first-principles calculations. By simply changing the direction of an external electric field loaded in ferroelectric PbZr_0.5Ti_0.5O₃, near the morphotropic phase boundary composition, we obtain the largest switching of thermal conductivity for ferroelectric materials at room temperature based on the dual-phonon theory, i.e., normal and diffuson-like phonons, with three different criteria. The calculation results indicate that with decreasing crystal symmetry, the degeneracy of phonon modes reduces and the avoid-crossing behavior of phonon branches enhances, leading to the increase of diffuson-like phonons and weighted phonon-phonon scattering phase space. A thermal switch prototype based on PbZr_0.5Ti_0.5O₃ is further shown that can protect the Li-ion battery by modulating its temperature up to 17.5 °C. Our studies would pave the way for designing next-generation thermal switch with high speed, a wide temperature range, and a large switching ratio.

Engineering thermal transport within Si thin films: The impact of nanoslot alignment and ion implantation

In recent years, nanoporous Si films have been intensively studied for their potential applications in thermoelectrics and the thermal management of devices. To minimize the thermal conductivity, ultrafine nanoporous patterns are required but the smallest structure size is largely limited by the spatial resolution of the employed nanofabrication techniques. Along this line, an effectively smaller characteristic length of a nanoporous film can be achieved with offset nanoslot patterns. Compared with periodic circular pores, the nanoslot pattern can achieve an even lower thermal conductivity, where a much smaller porosity is required using ultra-narrow nanoslots. The obtained low thermal conductivity can be understood from the thermally dead volume revealed by phonon Monte Carlo simulations. To further minimize the contribution from short-wavelength phonons, an additional 25% thermal conductivity reduction can be achieved with Ga ions implanted using a focused ion beam.

Selective Phonon Stimulation Mechanism to Tune Thermal Transport

In this paper, we determine the degree to which changes can be induced in the equilibrium thermal diffusivity and conductivity of a material via a selective nonequilibrium infrared stimulation mechanism for phonons. Using the molecular crystal RDX, we use detailed momentum-dependent coupling information across the entire Brillouin zone and the phonon gas model to show that stimulating selected modes in the spectrum of a target material can induce substantial changes in the overall thermal transport properties. Specifically in the case of RDX, stimulating modes at ∼22.74 cm^-1 over a linewidth of 1 cm^-1 can lead to enhanced scattering rates that reduce the overall thermal diffusivity and conductivity by 15.58 and 12.46%, respectively, from their equilibrium values. Due to the rich spectral content in the materials, however, stimulating modes near ∼1140.67 cm^-1 over a similar bandwidth can produce an increase in the thermal diffusivity and conductivity by 55.73 and 144.07%, respectively. The large changes suggest a mechanism to evoke substantially modulated thermal transport properties through light-matter interaction.

Enhanced thermoelectric properties in Sb/Ge core/shell nanowires through vacancy modulation

In the present work, we have modified the physical and electronic structure of Sb/Ge core/shell nanowires via vacancy creation and doping with foreign atoms with the aim to improve their thermoelectric energy conversion efficiency. Sb/Ge-NWs having a diameter of 1.5 Å show metallicity with 2G_o quantum conductance. The stability of the nanowires is assessed through the calculation of their formation energy. The formation of one vacancy at either the Sb- and Ge-site modifies substantially the electronic properties. From the comparison of the thermoelectric properties of the nanowires with and without the vacancy, we have found that the figure of merit for the Sb/Ge NW with one Sb vacancy increases of 0.18 compared to the pristine NW. The NW doping with different transition metals: Fe, Co, Ni and Cu have been found to also enhance the conversion efficiency. Thus, our calculations show that the thermoelectric performance of metal–semiconductor core–shell NWs can be in principle improved as much as 80% by vacancy formation and doping.

Thermal manipulation and thermal rectification in π-stacked organic nanowires

Thermal manipulation in nanowires (NWs) is of great significance for NW-based applications in the area of heat management and energy harvesting. Here, we experimentally demonstrate thermal conductivity manipulation and thermal rectification in π-stacked metallophthalocyanine (MPcs) NWs. By electron beam (E-beam) irradiation with a controllable dose, the thermal conductance of MPcs NWs can be continuously tuned to the desired values. Three thermal rectifiers were further tested on crystal-amorphous heterostructures and the thermal rectification was found to be 3.3% with a temperature bias of 10 K when T = 40 K, which is consistent with COMSOL simulations.

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

The helium ion microscope has emerged as a multifaceted instrument enabling a broad range of applications beyond imaging in which the finely focused helium ion beam is used for a variety of defect engineering, ion implantation, and nanofabrication tasks. Operation of the ion source with neon has extended the reach of this technology even further. This paper reviews the materials modification research that has been enabled by the helium ion microscope since its commercialization in 2007, ranging from fundamental studies of beam-sample effects, to the prototyping of new devices with features in the sub-10 nm domain.

Anomalous hybridization complementation effect on phonon transport in heterogeneous nanowire cross junction

Controlling phonon transport via its wave nature in nanostructures can achieve unique properties for various applications. In this paper, thermal conductivity of heterogeneous nano cross junction (hetero-NCJ) is studied through molecular dynamics simulation. It is found that decreasing or increasing the atomic mass of four side wires (SWs) severed as resonators, thermal conductivity of hetero-NCJ is enhanced, which is larger than that of homogeneous NCJ (homo-NCJ). Interestingly, by setting two SWs with larger atomic mass and other two SWs with smaller atomic mass, thermal conductivity of hetero-NCJ is abnormally decreased, which is even smaller than that of homo-NCJ. After further non-equilibrium Green's function calculations, it is demonstrated that origin of increase is attributed to the hybridization broken induced by unidirectional shift of resonant modes. However, the decrease in thermal conductivity originates from hybridization complementation induced by bidirectional shift of resonant modes, which synergistically blocks phonon transport. This work provides a mechanism for further strengthening resonant hybridization effect and manipulating thermal transport.

Emergence of -s, -p-dband inversion in zincblende gold iodide topological insulator and its thermoelectric properties

We employfirst-principlescalculations to investigate the topological states (TS) and thermoelectric (TE) transport properties of three dimensional (3D) gold iodide (AuI) which belongs to the zincblende family. We explore, semi-metal (SM) to topological conductor (TC) and topological insulator (TI) phase transitions. Under pristine conditions, AuI exhibits Dirac SM nature but, under the influence of mild isotropic compressive pressure the system undergoes electronic quantum phase transition driving it into non-trivial topological state. This state exhibits Dresselhaus like band spin splitting leading to a TC state. In order to realize TI state from the SM state, we break the cubic symmetry of the system by introducing a compressive pressure along (001) crystal direction. The non-trivial TI nature of the system is characterized by the emergence of robust surface states and theZ2invariantν0= 1 which indicates a strong TI nature. A novel facet of the phase transition discussed here is, the -sand -p, -dorbital band inversion mechanism which is unconventional as compared to previously explored TI families. This mechanism unravels new path by which TI materials can be predicted. Also, we investigated the lattice and electronic contributions to the TE transport properties. We characterize the TE performance by calculating the figure of merit (zT) and find that, at room temperature (300 K) and for a fixed doping concentration (i.e.,n= 1 × 1019 cm-3) the zT is 0.55 and 0.53 for electrons and holes respectively. This is quite remarkable since, higher values of zT are generally predicted at higher temperature scales whereas, zT values as in the present case are desired at room temperatures for various energy applications. The manifestation of non-trivial TS governed by the unconventional band inversion mechanism and the TE properties of AuI make it a unique multi-functional candidate with probable thermoelectric and spintronic applications.

Heat Transport Control and Thermal Characterization of Low-Dimensional Materials: A Review

Heat dissipation and thermal management are central challenges in various areas of science and technology and are critical issues for the majority of nanoelectronic devices. In this review, we focus on experimental advances in thermal characterization and phonon engineering that have drastically increased the understanding of heat transport and demonstrated efficient ways to control heat propagation in nanomaterials. We summarize the latest device-relevant methodologies of phonon engineering in semiconductor nanostructures and 2D materials, including graphene and transition metal dichalcogenides. Then, we review recent advances in thermal characterization techniques, and discuss their main challenges and limitations.

Gate-Tunable Polar Optical Phonon to Piezoelectric Scattering in Few-Layer Bi2 O2 Se for High-Performance Thermoelectrics

Atomically thin Bi₂ O₂ Se has emerged as a new member in 2D materials with ultrahigh carrier mobility and excellent air-stability, showing great potential for electronics and optoelectronics. In addition, its ferroelectric nature renders an ultralow thermal conductivity, making it a perfect candidate for thermoelectrics. In this work, the thermoelectric performance of 2D Bi₂ O₂ Se is investigated over a wide temperature range (20-300 K). A gate-tunable transition from polar optical phonon (POP) scattering to piezoelectric scattering is observed, which facilitates the capacity of drastic mobility engineering in 2D Bi₂ O₂ Se. Consequently, a high power factor of more than 400 µW m^-1  K^-2 over an unprecedented temperature range (80-200 K) is achieved, corresponding to the persistently high mobility arising from the highly gate-tunable scattering mechanism. This finding provides a new avenue for maximizing thermoelectric performance by changing the scattering mechanism and carrier mobility over a wide temperature range.

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

While the application of focused ion beam (FIB) techniques has become a well-established technique in research and development for patterning and prototyping on the nanometer scale, there is still a large underused potential with respect to the usage of ion species other than gallium. Light ions in the range of m = 1-28 u (hydrogen to silicon) are of increasing interest due to the available high beam resolution in the nanometer range and their special chemical and physical behavior in the substrate. In this work, helium and neon ion beams from a helium ion microscope are compared with ion beams such as lithium, beryllium, boron, and silicon, obtained from a mass-separated FIB using a liquid metal alloy ion source (LMAIS) with respect to the imaging and milling resolution, as well as the current stability. Simulations were carried out to investigate whether the experimentally smallest ion-milled trenches are limited by the size of the collision cascade. While He⁺ offers, experimentally and in simulations, the smallest minimum trench width, light ion species such as Li⁺ or Be⁺ from a LMAIS offer higher milling rates and ion currents while outperforming the milling resolution of Ne⁺ from a gas field ion source. The comparison allows one to select the best possible ion species for the specific demands in terms of resolution, beam current, and volume to be drilled.

Studying thermal transport in suspended monolayer molybdenum disulfide prepared by a nano-manipulator-assisted transfer method

The thermal transport of monolayer MoS₂, grown by chemical vapor deposition (CVD) method, was studied in this work. A novel approach was developed to transfer monolayer MoS₂ onto suspended microelectrothermal system device, where a nano-manipulator in a scanning electron microscope was employed to accomplish the feat. This nano-manipulator-assisted transferring gives a high sample yield with relatively good sample quality compared to the traditional wet/dry transfer methods. Temperature-dependent thermal conductivity of monolayer MoS₂ was measured by suspended-pads thermal bridge technique, with thermal conductivity value slightly lower than the exfoliated samples due to the phonon-defects scattering for CVD grown samples. Further extension of the current transfer method was demonstrated on few-layer graphite, where suspended graphite flakes that were free of surface ripples and with high thermal conductance were shown.

Probing thermal transport across amorphous region embedded in a single crystalline silicon nanowire

While numerous studies have been carried out to characterize heat transport behaviours in various crystalline silicon nanostructures, the corresponding characteristics of amorphous one-dimension system have not been well understood. In this study, we amorphize crystalline silicon by means of helium-ion irradiation, enabling the formation of a completely amorphous region of well-defined length along a single silicon nanowire. Heat conduction across both amorphous region and its crystalline/amorphous interface is characterized by an electron beam heating technique with high measurement spatial resolution. The measured thermal conductivity of the amorphous silicon nanowire appears length-independence with length ranging from ~30 nm to few hundreds nm, revealing the fully diffusons governed heat conduction. Moreover, unlike the size-dependent interfacial thermal conductance at the interface between two one-dimensional crystalline materials, here for the first time, we observe that the interface thermal conductance across the amorphous/crystalline silicon interface is nearly independent of the length of the amorphous region. This unusual independence is further supported by molecular dynamics (MD) simulation in our work. Our results provide experimental and theoretical insight into the nature of interaction between heat carriers in crystalline and amorphous nano-structures and shed new light to design innovative silicon nanowire based devices.

Radiative metasurface for thermal camouflage, illusion and messaging

Thanks to the conductive thermal metamaterials, novel functionalities like thermal cloak, camouflage and illusion have been achieved, but conductive metamaterials can only control the in-plane heat conduction. The radiative thermal metamaterials can control the out-of-plane thermal emission, which are more promising and applicable but have not been studied as comprehensively as the conductive counterparts. In this paper, we theoretically investigate the surface emissivity of metal/insulator/metal (MIM, i.e., Au/Ge/Au here) microstructures, by the rigorous coupled-wave algorithm, and utilize the excitation of the magnetic polaritons to realize thermal camouflage through designing the grating width distribution by minimizing the temperature standard deviation of the overall plate. Through this strategy, the hot spot in the original temperature field is removed and a uniform temperature field is observed in the infrared camera instead, demonstrating the thermal camouflage functionality. Furthermore, thermal illusion and thermal messaging functionalities are also demonstrated by resorting to using such an emissivity-structured radiative metasurface. The present MIM-based radiative metasurface may open avenues for developing novel thermal functionalities via thermal metasurface and metamaterials.

Nonlinear Heat Transport in Superlattices with Mobile Defects

We consider heat conduction in a superlattice with mobile defects, which reduce the thermal conductivity of the material. If the defects may be dragged by the heat flux, and if they are stopped at the interfaces of the superlattice, it is seen that the effective thermal resistance of the layers will depend on the heat flux. Thus, the concentration dependence of the transport coefficients plus the mobility of the defects lead to a strongly nonlinear behavior of heat transport, which may be used in some cases as a basis for thermal transistors.

Effect of density and Z-contrast on the visibility of noble gas precipitates and voids with insights from Monte-Carlo simulations

In this work, a detailed analysis of He, Ne, Ar, Kr and Xe precipitates in a complex borosilicate glass using transmission electron microscopy (TEM) with in-situ ion implantation is presented. With in-situ monitoring, the real-time dynamics of precipitate and void evolution under ion implantation was followed. Using appropriate equations of state and, Monte-Carlo simulations to supplement the TEM images, we then discuss in detail the possibility and ways of differentiating the precipitates of various noble gases from empty voids. It is shown that all the noble gases precipitate as inclusions of supercritical fluid. With the aid of the simulations, the crucial role played by the size and density of the precipitates and atomic number of the gas atoms in affecting the visibility of the precipitates is highlighted. The results show that the precipitates and voids can be unambiguously differentiated in the case of Xe and Kr whereas the precipitates of other lighter noble gases cannot be differentiated from the voids. However, the precipitate and void evolution under ion irradiation follow different dynamics, knowledge of which allows one to differentiate between the precipitates and voids even for lighter noble gases. Besides shedding light on the subject of noble gas precipitation and identification of the precipitates and voids, the study highlights the complexity in dissociating the behaviour of voids from the process of precipitate re-solution. This type of knowledge is pivotal in developing models describing the evolution of precipitates, voids and macroscopic porosity in a number of materials.

Disorder limits the coherent phonon transport in two-dimensional phononic crystal structures

Recently, increasing efforts are being made to control thermal transport via coherent phonons in periodic phononic structures; however, the direct observation of coherent phonon transport is experimentally very difficult at ambient temperature, and the importance of coherent phonons to the total thermal conductivity has not been critically assessed to date. In this study, using the non-equilibrium molecular dynamics simulations, we studied coherent phonon transport in a C3N phononic crystal (CNPnC) structure at room temperature by changing the porosity. When the holes were randomly distributed to construct the disordered C3N (D-C3N) structure, the localization of the coherent phonons was revealed by the phonon transmission coefficient, phonon wave packet simulation, phonon participation ratio and spatial energy density, which led to a significant reduction in the thermal conductivity. Finally, the effects of the length, temperature and strain on the thermal conductivity of CNPnC and D-C3N have also been discussed. Our study provides a solid understanding of the coherent phonon transport behavior, which will be beneficial for phononic-related control based on coherent phonons.

Ion Write Microthermotics: Programing Thermal Metamaterials at the Microscale

Considerable advances in manipulating heat flow in solids have been made through the innovation of artificial thermal structures such as thermal diodes, camouflages, and cloaks. Such thermal devices can be readily constructed only at the macroscale by mechanically assembling different materials with distinct values of thermal conductivity. Here, we extend these concepts to the microscale by demonstrating a monolithic material structure on which nearly arbitrary microscale thermal metamaterial patterns can be written and programmed. It is based on a single, suspended silicon membrane whose thermal conductivity is locally, continuously, and reversibly engineered over a wide range (between 2 and 65 W/m·K) and with fine spatial resolution (10-100 nm) by focused ion irradiation. Our thermal cloak demonstration shows how ion-write microthermotics can be used as a lithography-free platform to create thermal metamaterials that control heat flow at the microscale.

Ultrafast optical pulse shaping using dielectric metasurfaces

Advances in ultrafast lasers, chirped pulse amplifiers, and frequency comb technology require fundamentally new pulse-modulation strategies capable of supporting unprecedentedly large bandwidth and high peak power while maintaining high spectral resolution. We demonstrate how dielectric metasurfaces can be leveraged to shape the temporal profile of a near-infrared femtosecond pulse. Finely tailored pulse-shaping operations, including splitting, compression, chirping, and higher-order distortion, are achieved using a Fourier-transform setup embedding metasurfaces able to manipulate, simultaneously and independently, the amplitude and phase of the constituent frequency components of the pulse. Exploiting metasurfaces to manipulate the temporal characteristics of light expands their impact and opens new vistas in the field of ultrafast science and technology.

Probing the Physical Origin of Anisotropic Thermal Transport in Black Phosphorus Nanoribbons

Black phosphorus (BP) has emerged as a promising candidate for next-generation electronics and optoelectronics among the 2D family materials due to its extraordinary electrical/optical/optoelectronic properties. Interestingly, BP shows strong anisotropic transport behavior because of its puckered honeycomb structure. Previous studies have demonstrated the thermal transport anisotropy of BP and theoretically attribute this to the anisotropy in both the phonon dispersion relation and the phonon relaxation time. However, the exact origin of such strong anisotropy lacks clarity and has yet to be proven experimentally. Here, the thermal transport anisotropy of BP nanoribbons is probed by an electron beam technique. Direct evidence is provided that the origin of this anisotropy is dominated by the anisotropic phonon group velocity, verified by Young's modulus measurements along different directions. It turns out that the ratio of the thermal conductivity between zigzag (ZZ) and armchair (AC) ribbons is almost same as that of the corresponding Young modulus values. The results from first-principles calculation are consistent with this experimental observation, where the anisotropic phonon group velocity between ZZ and AC is shown. These results provide fundamental insight into the anisotropic thermal transport in low-symmetry crystals.

Particle Packing Theory Guided Thermal Conductive Polymer Preparation and Related Properties

Thermal conductive polymer composites are satisfying for thermal management of electronic devices. However, how to choose the sizes of thermal conductive fillers to get a high thermal conductivity of composites are still clueless and poor filler size matching will also affect the processability of the composites. Closest packing model was used to guide multiscale thermal conductive particles filling silicone rubber in this work. A highest thermal conductivity of 1.381 W·m^-1·K^-1 at filler loading of 50 vol % was determined among nine comparing formulations. The fillers with small particle size filled the interspaces of fillers with large particle size to form more complete thermal conduction paths and heat dissipation was increased. The apparent densities and rheological tests further verified the effectiveness of closest packing model. This study provides theoretical guidance for thermal conductive polymer composites to achieve high thermal conductivity and good processability, which has an important practical application.

Impact of pore anisotropy on the thermal conductivity of porous Si nanowires

Porous materials display enhanced scattering mechanisms that greatly influence their transport properties. Metal-assisted chemical etching (MACE) enables fabrication of porous silicon nanowires starting from a doped Si wafer by using a metal template that catalyzes the etching process. Here, we report on the low thermal conductivity (κ) of individual porous Si nanowires (NWs) prepared from MACE, with values as low as 0.87 W·m⁻¹·K⁻¹ for 90 nm diameter wires with 35–40% porosity. Despite the strong suppression of long mean free path phonons in porous materials, we find a linear correlation of κ with the NW diameter. We ascribe this dependence to the anisotropic porous structure that arises during chemical etching and modifies the phonon percolation pathway in the center and outer regions of the nanowire. The inner microstructure of the NWs is visualized by means of electron tomography. In addition, we have used molecular dynamics simulations to provide guidance for how a porosity gradient influences phonon transport along the axis of the NW. Our findings are important towards the rational design of porous materials with tailored thermal and electronic properties for improved thermoelectric devices.

Defect formation in multiwalled carbon nanotubes under low-energy He and Ne ion irradiation

The mechanical, structural, electronic and magnetic properties of carbon nanotubes can be modified by electron or ion irradiation. In this work we used 25 keV He+ and Ne+ ion irradiation to study the influence of fluence and sample thickness on the irradiation-induced damage of multiwalled carbon nanotubes (MWCNTs). The irradiated areas have been characterised by correlative Raman spectroscopy and TEM imaging. In order to preclude the Raman contribution coming from the amorphous carbon support of typical TEM grids, a new methodology involving Raman inactive Au TEM grids was developed. The experimental results have been compared to SDTRIMSP simulations. Due to the small thickness of the MWCNTs, sputtering has been observed for the top and bottom side of the samples. Depending on thickness and ion species, the sputter yield is significantly higher for the bottom than the top side. For He+ and Ne+ irradiation, damage formation evolves differently, with a change in the trend of the ratio of D to G peak in the Raman spectra being observed for He+ but not for Ne+. This can be attributed to differences in stopping power and sputter behaviour.

Helium Ion Microscopy for Imaging and Quantifying Porosity at the Nanoscale

Nanoporous materials are key components in a vast number of applications from energy to drug delivery and to agriculture. However, the number of ways to analytically quantify the salient features of these materials, for example: surface structure, pore shape, and size, remain limited. The most common approach is gas absorption, where volumetric gas absorption and desorption are measured. This technique has some fundamental drawbacks such as low sample throughput and a lack of direct surface visualization. In this work, we demonstrate Helium Ion Microscopy (HIM) as a tool for imaging and quantification of pores in industrially relevant SiO₂ catalyst supports. We start with the fundamental principles of ion-sample interaction, and build on this knowledge to experimentally observe and quantify surface pores by using the HIM and image data analytics. We contrast our experimental results to gas absorption and demonstrate full statistical agreement between two techniques. The principles behind the theoretical, experimental, and analytical framework presented herein offer an automated framework for visualization and quantification of pore structures in a wide variety of materials.